Integrated micro-optical electromagnetic sensing system

Abstract

The present invention provides an integrated micro-optical electromagnetic sensing system, which relates to the field of electric field sensing technology. The integrated micro-optical electromagnetic sensing system includes a refrigerator, a metal heat sink, a silicon substrate, a laser chip, a first photodetector chip and a waveguide coupler; the metal heat sink is fixed on the refrigerator, and the silicon substrate, the laser chip and the first photodetector chip are fixed on the metal heat sink; a first optical waveguide structure, a metal electrode and an antenna are arranged on the silicon substrate, the metal electrode is arranged around the first optical waveguide structure, and the antenna is connected to the metal electrode; a waveguide coupler is arranged between the first input end of the first optical waveguide structure and the laser chip, and between the first output end and the first photodetector chip. By integrating the silicon substrate, the laser chip and the first photodetector chip on the refrigerator through the metal heat sink, the volume of the integrated micro-optical electromagnetic sensing system can be reduced, and it is easy to carry, so as to achieve integration and miniaturization.

Description

Technical Field

[0001] The present invention relates to the technical field of electric field sensing, and in particular to an integrated micro-optical electromagnetic sensing system. Background Art

[0002] The concepts of ubiquitous power Internet of Things and digital power grids have gradually become important directions for the development of the power industry. On the basis of the existing power network, by deploying high-performance sensors, an efficient and comprehensive information network can be established to achieve real-time monitoring and fault diagnosis of the power system operation status, thereby realizing the intelligence and transparency of the power energy network. In the power grid, monitoring voltage signals is of great significance. By measuring the voltage of transmission lines and power equipment, it is possible to monitor the steady-state and transient information of the power grid, provide scheduling basis for the control end, and improve the safety and reliability of the power grid.

[0003] In the prior art, the electric field information of the transmission line and the power equipment is obtained through an optical electric field sensing system to calculate the voltage. The optical electric field sensing system includes a light source device, an electric field sensor and a light receiver. The light source device is connected to the electric field sensor through an optical fiber, and the electric field sensor is connected to the light receiver through an optical fiber. The working process of the optical electric field sensing system is as follows: the light source device inputs light waves to the electric field sensor through the optical fiber, and the light waves that the electric field sensor obtains the electric field strength information are transmitted to the light receiver through the optical fiber, and the light receiver converts the light waves carrying the electric field strength information into electrical signals carrying the electric field strength information.

[0004] However, the optical electric field sensing system in the prior art has the problem of being large in size and inconvenient to carry. Summary of the invention

[0005] The embodiment of the present invention provides an integrated micro optical electromagnetic sensing system to solve the problem that the optical electric field sensing system in the prior art is large in size and inconvenient to carry.

[0006] An embodiment of the present invention provides an integrated micro-optical electromagnetic sensing system, including a refrigerator, a metal heat sink, a silicon substrate, a laser chip, a first photodetector chip and a waveguide coupler;

[0007] The metal heat sink is fixed on the refrigerator, and the silicon substrate, the laser chip and the first photodetector chip are fixed on the metal heat sink;

[0008] A first optical waveguide structure, a metal electrode and an antenna are arranged on the silicon substrate, the metal electrode is arranged around the first optical waveguide structure, and the antenna is connected to the metal electrode;

[0009] The first optical waveguide structure has a first input end and a first output end, and the waveguide coupler is disposed between the first input end and the laser chip and between the first output end and the first photodetector chip.

[0010] In a possible implementation, the first optical waveguide structure includes a first optical waveguide body and a first annular waveguide, the first optical waveguide body includes a first waveguide segment, a second waveguide segment, and a third waveguide segment, the first waveguide segment and the second waveguide segment are arranged in parallel, the first waveguide segment and the second waveguide segment are respectively connected to the third waveguide segment, and the first annular waveguide is located between the first waveguide segment and the second waveguide segment.

[0011] In a possible implementation, the first input end is arranged at an end of the first waveguide segment away from the third waveguide segment, the first output end is arranged at an end of the second waveguide segment away from the third waveguide segment, and the first input end and the first output end are located on an end face of the first ring waveguide on the same side of the length direction of the silicon substrate.

[0012] In a possible embodiment, a second photodetector chip is further included, and a connecting waveguide, a second optical waveguide structure, a multimode interference coupler and a magneto-optical film are arranged on the silicon substrate, the second optical waveguide structure has a second input end and a second output end, the connecting waveguide, the first input end of the first optical waveguide structure and the second input end of the second optical waveguide structure are respectively connected to the multimode interference coupler, the connecting waveguide is connected to the laser chip through the waveguide coupler, the first output end of the first optical waveguide structure is connected to the first photodetector chip through the waveguide coupler, the second output end of the second optical waveguide structure is connected to the second photodetector chip through the waveguide coupler, and the magneto-optical film covers a portion of the second optical waveguide structure.

[0013] In a possible implementation, the second optical waveguide structure includes a second optical waveguide body and a second annular waveguide, the second annular waveguide is located inside the second optical waveguide body, and the magneto-optical film covers the second annular waveguide.

[0014] In a possible implementation, it further includes an electromagnetic shielding shell and an insulating substrate, wherein the electromagnetic shielding shell is fixed on the metal heat sink, and the insulating substrate is fixed on a side of the refrigerator away from the metal heat sink, and the electromagnetic shielding shell wraps the laser chip, the first photodetector chip, and the second photodetector chip.

[0015] In a possible implementation, the metal electrode includes a first electrode and a second electrode, the first electrode is located inside the first annular waveguide, and the second electrode is located outside the first annular waveguide. The antenna is a dipole antenna, and the dipole antenna includes a first antenna unit and a second antenna unit. The first antenna unit and the second antenna unit are respectively located on both sides of the first optical waveguide structure in the width direction of the silicon substrate. The first electrode is connected to the first antenna unit, and the second electrode is connected to the second antenna unit.

[0016] In a possible implementation manner, the silicon substrate is bonded to the metal heat sink, and the silicon substrate includes a substrate body and two connecting blocks, and the two connecting blocks are respectively connected to two sides of the silicon substrate in a width direction;

[0017] The substrate body has a first end and a second end in the length direction of the silicon substrate, the laser chip and the first photodetector chip are located at the first end, the first optical waveguide structure and the metal electrode are located on the substrate body, the first antenna unit and the second antenna unit of the dipole antenna are respectively located on the two connecting blocks, and the dipole antenna is closer to the second end than the first end in the length direction of the silicon substrate.

[0018] In a possible implementation, the first electrode of the metal electrode is electrically connected to the first antenna unit of the dipole antenna through a first wire, and the second electrode of the metal electrode is electrically connected to the second antenna unit of the dipole antenna through a second wire.

[0019] In a possible implementation, the laser chip and the first photodetector chip are bonded to the metal heat sink, and in the length direction of the silicon substrate, the distance between the laser chip and the dipole antenna and the distance between the first photodetector chip and the dipole antenna are both equal to a preset distance, and the preset distance is 2 to 3 cm.

[0020] The embodiment of the present invention provides an integrated micro optical electromagnetic sensing system, including a refrigerator, a metal heat sink, a silicon substrate, a laser chip, a first photodetector chip and a waveguide coupler; the metal heat sink is fixed on the refrigerator, and the silicon substrate, the laser chip and the first photodetector chip are fixed on the metal heat sink; a first optical waveguide structure, a metal electrode and an antenna are arranged on the silicon substrate, the metal electrode is arranged around the first optical waveguide structure, and the antenna is connected to the metal electrode; the first optical waveguide structure has a first input end and a first output end, and a waveguide coupler is arranged between the first input end and the laser chip and between the first output end and the first photodetector chip. By integrating the silicon substrate, the laser chip and the first photodetector chip on the refrigerator through the metal heat sink, the volume of the integrated micro optical electromagnetic sensing system can be reduced, the integration and miniaturization of the integrated micro optical electromagnetic sensing system can be realized, and the integrated micro optical electromagnetic sensing system is easy to carry. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0022] Figure 1 A schematic diagram of the structure of an integrated micro-optical electromagnetic sensing system provided in Embodiment 1 of the present invention;

[0023] Figure 2 for Figure 1 Schematic diagram of the partial structure of the integrated micro-optical electromagnetic sensing system;

[0024] Figure 3 A schematic diagram of the structure of an integrated micro-optical electromagnetic sensing system provided in the second embodiment of the present invention;

[0025] Figure 4 for Figure 3 Schematic diagram of the partial structure of the integrated micro-optical electromagnetic sensing system.

[0026] Description of reference numerals:

[0027] 10-refrigerator; 20-metal heat sink; 30-silicon substrate; 301-substrate body; 302-connecting block; 31-first optical waveguide structure; 31a-first optical waveguide body; 311-first waveguide section; 3111-first input end; 312-second waveguide section; 3121-first output end; 313-third waveguide section; 314-first annular waveguide; 32-metal electrode; 321-first electrode; 322-second electrode; 33-antenna; 331-first antenna unit; 332-second antenna unit; 34-waveguide coupler; 351-first conductor; 352-second conductor; 40-laser chip; 401-power port; 50-first photodetector chip; 501-first output port; 60-electromagnetic shielding shell; 70-insulating substrate; 36-connecting waveguide; 37-second optical waveguide structure; 37a-second optical waveguide body; 37b-second ring waveguide; 371-second input end; 372-second output end; 38-multimode interference coupler; 39-magneto-optical film; 80-second photodetector chip. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0030] In the present invention, unless otherwise clearly specified and limited, the terms "installation", "connection", "fixation" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0031] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0032] In the above description, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0033] As described in the background technology, the optical electric field sensing system in the prior art has the problem of being large in size and inconvenient to carry. The inventor has found that the reason for this problem is that the light source device and the optical receiver are large in size, and the electric field sensor is connected to the light source device and the optical receiver through an optical fiber, which makes the optical electric field sensing system large in size and inconvenient to carry.

[0034] In order to solve the above problems, an embodiment of the present invention provides an integrated micro-optical electromagnetic sensing system, in which a laser chip and a first photodetector chip are provided. The laser chip and the first photodetector chip are relatively small in size. A first optical waveguide structure, a metal electrode and an antenna are provided on a silicon substrate. The first output end and the first input end of the first optical waveguide structure are respectively connected to the laser chip and the first photodetector chip through a waveguide coupler. The silicon substrate, the laser chip and the first photodetector chip are integrated on a refrigerator through a metal heat sink. The volume of the integrated micro-optical electromagnetic sensing system can be reduced and the system is easy to carry, thereby realizing the integration and miniaturization of the integrated micro-optical electromagnetic sensing system.

[0035] The integrated micro optical electromagnetic sensing system provided by the embodiment of the present invention is described in detail below in conjunction with specific embodiments.

[0036] like Figure 1 and Figure 2As shown, an embodiment of the present invention provides an integrated micro-optical electromagnetic sensing system, including a refrigerator 10, a metal heat sink 20, a silicon substrate 30, a laser chip 40, a first photodetector chip 50 and a waveguide coupler 34; the metal heat sink 20 is fixed on the refrigerator 10, and the silicon substrate 30, the laser chip 40 and the first photodetector chip 50 are fixed on the metal heat sink 20; a first optical waveguide structure 31, a metal electrode 32 and an antenna 33 are provided on the silicon substrate 30, the metal electrode 32 is arranged around the first optical waveguide structure 31, and the antenna 33 is connected to the metal electrode 32.

[0037] The first optical waveguide structure 31 has a first input end 3111 and a first output end 3121 . A waveguide coupler 34 is disposed between the first input end 3111 and the laser chip 40 and between the first output end 3121 and the first photodetector chip 50 .

[0038] The refrigerator 10 is a semiconductor refrigerator, and the cooling surface of the refrigerator 10 is connected to the metal heat sink 20 . Specifically, the metal heat sink 20 is welded on the cooling surface of the refrigerator 10 .

[0039] The thermal conductivity and dielectric constant of the material of the metal heat sink 20 can be set as needed. In some examples, the thermal conductivity of the material of the metal heat sink 20 can be greater than 120 W / (m·K), and the dielectric constant of the material of the metal heat sink 20 can be less than 8.

[0040] The silicon substrate 30 may be a semiconductor element, such as single crystal silicon, polycrystalline silicon or silicon with an amorphous structure, or a mixed semiconductor structure, such as silicon carbide, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide or gallium antimonide, an alloy semiconductor or a combination thereof. This embodiment is not limited thereto.

[0041] The material of the first optical waveguide structure 31 is a material with a high electro-optic coefficient, and includes but is not limited to lithium niobate and polyvinylidene fluoride.

[0042] The type of the first optical waveguide structure 31 can be selected according to the sensitivity and range required by the integrated micro-optical electromagnetic sensing system. In some examples, the first optical waveguide structure 31 includes but is not limited to a Mach-Zehnder structure, a microring-Mach-Zehnder structure, and a microring resonance structure.

[0043] The material of the metal electrode 32 includes, but is not limited to, chromium, aluminum, and gold. The material of the antenna 33 is the same as that of the metal electrode 32 .

[0044] The laser chip 40 is used to provide an optical signal for the integrated micro optical electromagnetic sensing system. The laser chip 40 transmits the optical signal to the first input end 3111 of the first optical waveguide structure 31 through the waveguide coupler 34 .

[0045] The antenna 33 is used to receive an external electric field. When the antenna 33 receives the external electric field, an induced voltage is generated between the metal electrodes 32. By utilizing the electro-optical effect, the induced voltage will change the effective refractive index of the first optical waveguide structure 31, thereby changing the phase of the light wave transmitted in the first optical waveguide structure 31, and further converting the phase change of the light wave into a change of light intensity at the first output end 3121 of the first optical waveguide structure 31 by the interference effect of the light wave.

[0046] The optical signal output by the first optical waveguide structure 31 is transmitted to the first photodetector chip 50 through the waveguide coupler 34. The first photodetector chip 50 is used to convert the optical signal output by the first optical waveguide structure 31 into an electrical signal. It should be noted that the integrated micro-optical electromagnetic sensing system can be connected to a signal processing unit, and the electrical signal output by the first photodetector chip 50 can be input to the signal processing unit, and the signal processing unit can extract information of the external electric field.

[0047] The laser chip 40 is bonded to the waveguide coupler 34 , and the first photodetector chip 50 is bonded to the waveguide coupler 34 .

[0048] When the laser chip 40 and the first photodetector chip 50 are working, the heat generated is transferred to the refrigerator 10 through the metal heat sink 20, and the refrigerator 10 absorbs the heat.

[0049] The working process of the integrated micro-optical electromagnetic sensing system: the output light of the laser chip 40 is input into the first optical waveguide structure 31 through the waveguide coupler 34; when the antenna 33 receives the external electric field, the effective refractive index of the first optical waveguide structure 31 changes due to the electro-optical effect, so that the phase of the light wave transmitted in the first optical waveguide structure 31 changes, and the interference effect of the first optical waveguide structure 31 converts the optical phase change into a light intensity change; the optical signal output by the first optical waveguide structure 31 is transmitted to the first photodetector chip 50 through the waveguide coupler 34, and the first photodetector chip 50 converts the optical signal output by the first optical waveguide structure 31 into an electrical signal. By simultaneously monitoring the electric field through the integrated micro-optical electromagnetic sensing system, the operating status of the power system can be better understood, which is helpful for fault diagnosis and prediction.

[0050] In the integrated micro-optical electromagnetic sensing system provided by the embodiment of the present invention, the laser chip 40 and the first photodetector chip 50 are relatively small in size, and a first optical waveguide structure 31, a metal electrode 32 and an antenna 33 are arranged on the silicon substrate 30. The first input end 3111 and the first output end 3121 of the first optical waveguide structure 31 are respectively connected to the laser chip 40 and the first photodetector chip 50 through a waveguide coupler 34. The silicon substrate 30, the laser chip 40 and the first photodetector chip 50 are integrated on the refrigerator 10 through a metal heat sink 20, so that the volume of the integrated micro-optical electromagnetic sensing system can be reduced and the system is easy to carry, thereby realizing the integration and miniaturization of the integrated micro-optical electromagnetic sensing system.

[0051] In a possible implementation, Figure 1 and Figure 2 As shown, the first optical waveguide structure 31 is a micro-ring resonant structure. The first optical waveguide structure 31 includes a first optical waveguide body 31a and a first annular waveguide 314. The first optical waveguide body 31a includes a first waveguide segment 311, a second waveguide segment 312 and a third waveguide segment 313. The first waveguide segment 311 and the second waveguide segment 312 are arranged in parallel. The first waveguide segment 311 and the second waveguide segment 312 are respectively connected to the third waveguide segment 313. The first annular waveguide 314 is located between the first waveguide segment 311 and the second waveguide segment 312.

[0052] Among them, Figure 1 As shown, the length direction of the silicon substrate 30 is the X-axis direction; the width direction of the silicon substrate 30 is the Y-axis direction, and the X-axis and the Y-axis are perpendicular to each other.

[0053] The first optical waveguide structure 31 is a lithium niobate first optical waveguide structure, and the material of the first optical waveguide structure 31 is lithium niobate. The first optical waveguide structure 31 is formed as follows: a lithium niobate layer is formed on the silicon substrate 30, and the lithium niobate layer is processed by photolithography and etching to obtain the first optical waveguide structure 31.

[0054] The shape of the first optical waveguide body 31a is not particularly set.

[0055] In a possible implementation, Figure 1 and Figure 2 As shown, the first input end 3111 is arranged at one end of the first waveguide section 311 away from the third waveguide section 313, the first output end 3121 is arranged at one end of the second waveguide section 312 away from the third waveguide section 313, and the first input end 3111 and the first output end 3121 are located on the end surface of the first annular waveguide 314 on the same side of the length direction of the silicon substrate 30. In this way, the volume of the integrated micro optical electromagnetic sensor system can be reduced, and the miniaturization of the integrated micro optical electromagnetic sensor system can be achieved.

[0056] The first waveguide section 311 is bonded to the waveguide coupler 34 , and the second waveguide section 312 is bonded to the waveguide coupler 34 .

[0057] The shapes of the first waveguide segment 311 and the second waveguide segment 312 may both be linear, and the first waveguide segment 311 and the second waveguide segment 312 both extend along the length direction of the silicon substrate 30 .

[0058] The third waveguide segment 313 may be in a semicircular shape, the first annular waveguide 314 may be in a circular shape, and the center of the first annular waveguide 314 coincides with the center of the third waveguide segment 313 .

[0059] In a possible implementation, Figure 2 As shown, the metal electrode 32 includes a first electrode 321 and a second electrode 322, the first electrode 321 is located inside the first annular waveguide 314, and the second electrode 322 is located outside the first annular waveguide 314, the antenna 33 is a dipole antenna, and the dipole antenna includes a first antenna unit 331 and a second antenna unit 332, the first antenna unit 331 and the second antenna unit 332 are respectively located on both sides of the first optical waveguide structure 31 in the width direction of the silicon substrate 30, the first electrode 321 is connected to the first antenna unit 331, and the second electrode 322 is connected to the second antenna unit 332.

[0060] The material of the metal electrode 32 may be aluminum. The formation process of the metal electrode 32 is specifically as follows: an aluminum layer is formed on the silicon substrate 30, and the aluminum layer is processed by photolithography and etching processes to obtain the metal electrode 32.

[0061] The shape of the first electrode 321 may be the same as the shape of the second electrode 322. In some examples, a portion of the first electrode 321 is in a square shape, and another portion of the first electrode 321 is in an arc shape.

[0062] The material of the dipole antenna may be aluminum. The formation process of the dipole antenna is specifically as follows: an aluminum layer is formed on the silicon substrate 30, and the aluminum layer is processed by photolithography and etching processes to obtain the dipole antenna.

[0063] When the dipole antenna receives an external electric field, an induced voltage is generated between the first electrode 321 and the second electrode 322. By utilizing the electro-optical effect, the induced voltage will change the effective refractive index of the first optical waveguide structure 31, thereby changing the phase of the light wave transmitted in the first optical waveguide structure 31, and further converting the phase change of the light wave into a change of light intensity by the interference effect of the light wave at the first output end 3121 of the first optical waveguide structure 31.

[0064] In a possible implementation, Figure 2As shown, the silicon substrate 30 is bonded to the metal heat sink 20, and the silicon substrate 30 includes a substrate body 301 and two connecting blocks 302, and the two connecting blocks 302 are respectively connected to the two sides of the width direction of the silicon substrate 30; the substrate body 301 has a first end 3011 and a second end 3012 in the length direction of the silicon substrate 30, the laser chip 40 and the first photodetector chip 50 are located at the first end 3011, the first optical waveguide structure 31 and the metal electrode 32 are located on the substrate body 301, and the first antenna unit 331 and the second antenna unit 332 of the dipole antenna are respectively located on the two connecting blocks 302, and the dipole antenna is closer to the second end 3012 relative to the first end 3011 in the length direction of the silicon substrate 30.

[0065] The base body 301 and the connection block 302 are both in a square shape, and the metal heat sink 20 is in a square shape.

[0066] The area of ​​the surface of the metal heat sink 20 facing the silicon substrate 30 is larger than the area of ​​the surface of the silicon substrate 30 facing the metal heat sink 20. The silicon substrate 30 can be bonded to the metal heat sink 20 by ultraviolet light curing adhesive.

[0067] like Figure 1 and Figure 2 As shown, the first electrode 321 of the metal electrode 32 is electrically connected to the first antenna unit 331 of the dipole antenna 33 through a first wire 351 , and the second electrode 322 of the metal electrode 32 is electrically connected to the second antenna unit 332 of the dipole antenna 33 through a second wire 352 .

[0068] In a possible implementation, the laser chip 40 and the first photodetector chip 50 are bonded to the metal heat sink 20. In the length direction of the silicon substrate 30, the distance between the laser chip 40 and the dipole antenna and the distance between the first photodetector chip 50 and the dipole antenna are both equal to a preset distance, which may be 2 to 3 cm.

[0069] In a possible implementation, Figure 1 As shown, the integrated micro-optical electromagnetic sensing system also includes an electromagnetic shielding shell 60, which is fixed on the metal heat sink 20, and the electromagnetic shielding shell 60 wraps the laser chip 40 and the first photodetector chip 50. By locating the laser chip 40 and the first photodetector chip 50 inside the electromagnetic shielding shell 60, the distortion interference of the external electric field outside the electromagnetic shielding shell 60 can be reduced. It should be noted that when the integrated micro-optical electromagnetic sensing system is in an external electric field, by locating the laser chip 40 and the first photodetector chip 50 inside the electromagnetic shielding shell 60, the surface accumulation of charges on the laser chip 40 and the first photodetector chip 50 can be prevented, causing breakdown inside the laser chip 40 and the first photodetector chip 50.

[0070] The shape of the electromagnetic shielding shell 60 is not specifically set here. The material of the electromagnetic shielding shell 60 can be metal, such as aluminum.

[0071] The electromagnetic shielding case 60 is substantially in the shape of a rectangle, and the top corners of the electromagnetic shielding case 60 are smoothed by chamfering.

[0072] In a possible implementation, Figure 1 and Figure 2 As shown, the integrated micro-optical electromagnetic sensor system further includes an insulating substrate 70, which is fixed to a side of the refrigerator 10 away from the metal heat sink 20. When the integrated micro-optical electromagnetic sensor system is in an external electric field, it is possible to prevent charge accumulation on the surface of the refrigerator 10 and interference with the external electric field.

[0073] The material of the insulating substrate 70 may be epoxy resin.

[0074] In a possible implementation, Figure 2 As shown, the first photodetector chip 50 has a first output port 501 , and the first output port 501 can be connected to a signal processing unit.

[0075] The laser chip 40 has a power port 401 for connecting to an external power source.

[0076] The integrated micro-optical electromagnetic sensing system in Example 2 differs from the integrated micro-optical electromagnetic sensing system in Example 1 in that the integrated micro-optical electromagnetic sensing system in Example 2 adds a second photodetector chip 80, a connecting waveguide 36, a second optical waveguide structure 37, a multi-mode interference coupler 38 and a magneto-optical film 39.

[0077] In a possible implementation, Figure 3 and Figure 4 As shown, the integrated micro-optical electromagnetic sensing system also includes a second photodetector chip 80. A connecting waveguide 36, a second optical waveguide structure 37, a multimode interference coupler 38 and a magneto-optical film 39 are arranged on the silicon substrate 30. The second optical waveguide structure 37 has a second input end 371 and a second output end 372. The connecting waveguide 36, the first input end 3111 of the first optical waveguide structure 31 and the second input end 371 of the second optical waveguide structure 37 are respectively connected to the multimode interference coupler 38. The connecting waveguide 36 is connected to the laser chip 40 through the waveguide coupler 34. The first output end 3121 of the first optical waveguide structure 31 is connected to the first photodetector chip 50 through the waveguide coupler 34. The second output end 372 of the second optical waveguide structure 37 is connected to the second photodetector chip 80 through the waveguide coupler 34. The magneto-optical film 39 covers part of the second optical waveguide structure 37.

[0078] The materials of the connecting waveguide 36 and the second optical waveguide structure 37 are both high electro-optic coefficient materials.

[0079] The material of the connecting waveguide 36 includes, but is not limited to, lithium niobate and polyvinylidene fluoride. In some examples, the material of the connecting waveguide 36 is lithium niobate. The forming process of the connecting waveguide 36 is as follows: a lithium niobate layer is formed on the silicon substrate 30, and the lithium niobate layer is processed by photolithography and etching processes to obtain the connecting waveguide 36.

[0080] The connecting waveguide 36 is adhesively connected to the waveguide coupler 34 .

[0081] The material of the second optical waveguide structure 37 includes, but is not limited to, lithium niobate and polyvinylidene fluoride. In some examples, the material of the second optical waveguide structure 37 is lithium niobate. The formation process of the second optical waveguide structure 37 is as follows: a lithium niobate layer is formed on the silicon substrate 30, and the lithium niobate layer is processed by photolithography and etching processes to obtain the second optical waveguide structure 37.

[0082] The second output end 372 of the second optical waveguide structure 37 is adhesively connected to the waveguide coupler 34 .

[0083] The shape of the second optical waveguide structure 37 is not specifically set.

[0084] The multimode interference coupler 38 is used to split the optical signal in the connecting waveguide 36 into two optical signals, and the two optical signals respectively enter the first input end 3111 of the first optical waveguide structure 31 and the second input end 371 of the second optical waveguide structure 37. Specifically, the laser chip 40 transmits the optical signal to the connecting waveguide 36 through the waveguide coupler 34, and the connecting waveguide 36 transmits the optical signal to the multimode interference coupler 38. The multimode interference coupler 38 is used to split the optical signal in the connecting waveguide 36 into two optical signals, and the two optical signals respectively enter the first input end 3111 of the first optical waveguide structure 31 and the second input end 371 of the second optical waveguide structure 37.

[0085] The material of the magneto-optical film 39 is a magneto-optical material and can be formed on the silicon substrate 30 by a deposition process.

[0086] When the integrated micro-optical electromagnetic sensing system is placed in an external electric field and an external magnetic field, an induced voltage is generated between the metal electrodes 32. By utilizing the electro-optical effect, the induced voltage will change the effective refractive index of the first optical waveguide structure 31, thereby changing the phase of the light wave transmitted in the first optical waveguide structure 31, and further convert the phase change of the light wave into a change of light intensity by the interference effect of the light wave at the first output end 3121 of the first optical waveguide structure 31. The refractive index of the magneto-optical film 39 changes under the external magnetic field. By utilizing the Faraday magneto-optical effect, the changed refractive index will change the effective refractive index of the second optical waveguide structure 37, thereby changing the phase of the light wave transmitted in the second optical waveguide structure 37, and further convert the phase change of the light wave into a change of light intensity by the interference effect of the light wave at the second output end 372 of the second optical waveguide structure 37.

[0087] The optical signal output by the first optical waveguide structure 31 is transmitted to the first photodetector chip 50 through the waveguide coupler 34, and the first photodetector chip 50 is used to convert the optical signal output by the first optical waveguide structure 31 into an electrical signal; the optical signal output by the second optical waveguide structure 37 is transmitted to the second photodetector chip 80 through the waveguide coupler 34, and the second photodetector chip 80 is used to convert the optical signal output by the second optical waveguide structure 37 into an electrical signal. It should be noted that the integrated micro optical electromagnetic sensing system can be connected to a signal processing unit, and the electrical signals output by the first photodetector chip 50 and the second photodetector chip 80 can be input to the signal processing unit, and the signal processing unit can extract information about the external electric field and the external magnetic field.

[0088] When the laser chip 40 , the first photodetector chip 50 , and the second photodetector chip 80 are working, the heat generated is transferred to the refrigerator 10 through the metal heat sink 20 , and the refrigerator 10 absorbs the heat.

[0089] The electromagnetic shielding case 60 encloses the laser chip 40 , the first photodetector chip 50 and the second photodetector chip 80 .

[0090] The working process of the integrated micro optical electromagnetic sensing system is as follows: the output light of the laser chip 40 is input into the connecting waveguide 36 through the waveguide coupler 34, and enters the first optical waveguide structure 31 and the second optical waveguide structure 37 respectively through the multimode interference coupler 38; when the antenna 33 receives an external electric field, due to the electro-optical effect, the effective refractive index of the first optical waveguide structure 31 changes, so that the phase of the light wave transmitted in the first optical waveguide structure 31 changes, and the interference effect of the first optical waveguide structure 31 converts the light phase change into a light intensity change, and the light signal output by the first optical waveguide structure 31 is transmitted to the first photodetector chip 50 through the waveguide coupler 34, and the first photodetector chip 50 The optical signal output by the first optical waveguide structure 31 is converted into an electrical signal; the refractive index of the magneto-optical film 39 changes under an external magnetic field, and the changed refractive index changes the effective refractive index of the second optical waveguide structure 37 by using the Faraday magneto-optical effect, thereby changing the phase of the light wave transmitted in the second optical waveguide structure 37, and further converting the phase change of the light wave into a change of light intensity by the interference effect of the light wave at the second output end 372 of the second optical waveguide structure 37, and the optical signal output by the second optical waveguide structure 37 is transmitted to the second photodetector chip 80 through the waveguide coupler 34, and the second photodetector chip 80 converts the optical signal output by the second optical waveguide structure 37 into an electrical signal. By simultaneously monitoring the electric field and the magnetic field through an integrated micro-optical electromagnetic sensing system, the operating status of the power system can be better understood, which is helpful for fault diagnosis and prediction.

[0091] In addition, the first optical waveguide structure 31 and the second optical waveguide structure 37 share a laser chip 40, which greatly reduces the overall power consumption of the integrated micro-optical electromagnetic sensing system.

[0092] It should be noted that the integrated micro-optical electromagnetic sensing system of the present application is not limited to monitoring electric and magnetic fields. The present application can also simultaneously monitor other physical quantities (such as humidity, temperature, pressure, etc.) through the principles of electro-optical effect and Faraday magneto-optical effect.

[0093] In a possible implementation, the second optical waveguide structure 37 includes a second optical waveguide body 37a and a second annular waveguide 37b, the second annular waveguide 37b is located inside the second optical waveguide body 37a, and the magneto-optical film 39 covers the second annular waveguide 37b.

[0094] The second ring waveguide 37b may be in the shape of an oblong.

[0095] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An integrated micro-optical electromagnetic sensing system, characterized in that: It includes a refrigerator, a metal heat sink, a silicon substrate, a laser chip, a first photodetector chip and a waveguide coupler; The metal heat sink is fixed on the refrigerator, and the silicon substrate, the laser chip and the first photodetector chip are fixed on the metal heat sink; A first optical waveguide structure, a metal electrode and an antenna are arranged on the silicon substrate, the metal electrode is arranged around the first optical waveguide structure, and the antenna is connected to the metal electrode; The first optical waveguide structure has a first input end and a first output end, and the waveguide coupler is arranged between the first input end and the laser chip and between the first output end and the first photodetector chip; It also includes a second photodetector chip, wherein a connecting waveguide, a second optical waveguide structure, a multimode interference coupler and a magneto-optical film are arranged on the silicon substrate, the second optical waveguide structure has a second input end and a second output end, the connecting waveguide, the first input end of the first optical waveguide structure and the second input end of the second optical waveguide structure are respectively connected to the multimode interference coupler, the connecting waveguide is connected to the laser chip through the waveguide coupler, the first output end of the first optical waveguide structure is connected to the first photodetector chip through the waveguide coupler, the second output end of the second optical waveguide structure is connected to the second photodetector chip through the waveguide coupler, and the magneto-optical film covers a portion of the second optical waveguide structure; The second optical waveguide structure includes a second optical waveguide body and a second annular waveguide, wherein the second annular waveguide is located inside the second optical waveguide body, and the magneto-optical film covers the second annular waveguide.

2. The integrated micro optical electromagnetic sensing system according to claim 1, characterized in that: The first optical waveguide structure includes a first optical waveguide body and a first annular waveguide, the first optical waveguide body includes a first waveguide segment, a second waveguide segment and a third waveguide segment, the first waveguide segment and the second waveguide segment are arranged in parallel, the first waveguide segment and the second waveguide segment are respectively connected to the third waveguide segment, and the first annular waveguide is located between the first waveguide segment and the second waveguide segment.

3. The integrated micro optical electromagnetic sensing system according to claim 2, characterized in that: The first input end is arranged at an end of the first waveguide segment away from the third waveguide segment, the first output end is arranged at an end of the second waveguide segment away from the third waveguide segment, and the first input end and the first output end are located on the end face of the first ring waveguide on the same side of the length direction of the silicon substrate.

4. The integrated micro optical electromagnetic sensing system according to claim 2, characterized in that: It also includes an electromagnetic shielding shell and an insulating substrate, the electromagnetic shielding shell is fixed on the metal heat sink, the insulating substrate is fixed on the side of the refrigerator away from the metal heat sink, and the electromagnetic shielding shell wraps the laser chip, the first photodetector chip and the second photodetector chip.

5. The integrated micro optical electromagnetic sensing system according to any one of claims 2 to 4, characterized in that: The metal electrode includes a first electrode and a second electrode, the first electrode is located inside the first annular waveguide, and the second electrode is located outside the first annular waveguide. The antenna is a dipole antenna, and the dipole antenna includes a first antenna unit and a second antenna unit. The first antenna unit and the second antenna unit are respectively located on both sides of the first optical waveguide structure in the width direction of the silicon substrate. The first electrode is connected to the first antenna unit, and the second electrode is connected to the second antenna unit.

6. The integrated micro optical electromagnetic sensing system according to claim 5, characterized in that: The silicon substrate is bonded to the metal heat sink, and the silicon substrate comprises a substrate body and two connecting blocks, wherein the two connecting blocks are respectively connected to two sides of the silicon substrate in a width direction; The substrate body has a first end and a second end in the length direction of the silicon substrate, the laser chip and the first photodetector chip are located at the first end, the first optical waveguide structure and the metal electrode are located on the substrate body, the first antenna unit and the second antenna unit of the dipole antenna are respectively located on the two connecting blocks, and the dipole antenna is closer to the second end than the first end in the length direction of the silicon substrate.

7. The integrated micro optical electromagnetic sensing system according to claim 6, characterized in that: The first electrode of the metal electrode is electrically connected to the first antenna unit of the dipole antenna through a first conductive wire, and the second electrode of the metal electrode is electrically connected to the second antenna unit of the dipole antenna through a second conductive wire.

8. The integrated micro optical electromagnetic sensing system according to claim 6, characterized in that: The laser chip and the first photodetector chip are bonded to the metal heat sink. In the length direction of the silicon substrate, the distance between the laser chip and the dipole antenna and the distance between the first photodetector chip and the dipole antenna are both equal to a preset distance, which is 2 to 3 cm.

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