A composite photolithography structure and its manufacturing method

Abstract

The present invention discloses a composite photolithography structure and a manufacturing method thereof. The composite photolithography structure comprises at least two intersecting photolithography units with different photolithography structures, wherein each of the photolithography units forms an overlapping area at the intersection; each of the photolithography units is provided with a plurality of dot units in the overlapping area for removing a part of the structure corresponding to the photolithography unit; when different photolithography units are combined, the dot units corresponding to the different photolithography units are mutually embedded; the present invention can make photolithography structures with different texture structures and effects merge seamlessly.

Description

Technical Field

[0001] The present invention relates to the field of photolithography technology, and in particular to a composite photolithography structure and a manufacturing method thereof. Background Art

[0002] In the existing lithography technology, different processes are adopted according to different texture structure requirements. Commonly used lithography processes include interference lithography, direct writing lithography, exposure, grayscale lithography and mechanical processing. At present, if you want to achieve a combination of multiple texture structures, the main technical means are UV platemaking and precise overlay.

[0003] UV platemaking is to combine the film in different areas accurately, so as to locate and combine all structures. However, the accuracy of UV platemaking technology depends in part on the accuracy of the film. The line width of the film is relatively wide, usually greater than 0.02mm, and when the film is exposed to UV, the area with fine lines will be exposed and widened, resulting in blurred images. In addition, UV platemaking technology will produce obvious seams and irregular boundaries that are not smooth, affecting the appearance.

[0004] Precision overlay is to achieve overlay lithography of multiple processes through the precise positioning of one or more devices. It can match the process parameters of different lithography technologies, and can simultaneously position and combine processes with different structural effects on one mold. Multiple different structures are embedded through contour edges to achieve the combined effect. However, due to the different effects of different structures, obvious contour lines will be produced where different structures are embedded. Summary of the invention

[0005] The object of the present invention is to provide a composite photolithography structure and a manufacturing method thereof, which can enable photolithography structures with different texture structures and effects to be seamlessly integrated.

[0006] The present invention provides a composite lithography structure, comprising at least two intersecting lithography units having different lithography structures, wherein each of the lithography units forms an overlapping area at the intersection; each of the lithography units is provided with a plurality of point units in the overlapping area, for determining the lithography area and the non-lithography area corresponding to the lithography unit; when different lithography units are combined, the lithography areas of the different lithography units in the overlapping area are mutually embedded.

[0007] Furthermore, different photolithography units partially intersect to form the overlapping area, and each of the photolithography units includes a non-overlapping area corresponding to the overlapping area.

[0008] Furthermore, the density of the dot units of each of the photolithography units is distributed in a trend of gradually increasing from a side of the overlapping area close to the non-overlapping area of ​​the photolithography unit to a side away from the non-overlapping area of ​​the photolithography unit.

[0009] Furthermore, in the lithography unit with the smallest format, the area ratio of the overlapping region to the non-overlapping region is 1:5 to 1:1.

[0010] Furthermore, the arrangement of the point units is random.

[0011] Furthermore, the shape of the point unit is at least one of a circle, a rectangle, a triangle, and a regular polygon.

[0012] Furthermore, the size of the dot unit is 10-100 um.

[0013] Another aspect of the present invention further provides a method for manufacturing a composite lithography structure, which is used to manufacture the composite lithography structure, comprising the following steps:

[0014] S1. Design at least two lithography unit files with different lithography structures respectively.

[0015] S2. Determine the intersection relationship according to the positional relationship between the lithography units of different structures, and then determine the overlapping area.

[0016] S3. Based on the overlapping area, set a dot unit on each of the lithography unit files to determine a lithography area and a non-lithography area of ​​each of the lithography units.

[0017] S4, manufacturing a lithography unit based on the lithography unit file obtained in step S3, performing corresponding lithography processing on the area of ​​each lithography unit file except the dot unit, to obtain lithography units with different lithography structures.

[0018] S5, combining the photolithography units obtained in step S4, and interlocking the dot units of different photolithography units to obtain a composite photolithography structure.

[0019] Furthermore, the step S2 specifically includes: different photolithography units partially intersect to form the overlapping area, and each of the photolithography units includes a non-overlapping area corresponding to the overlapping area.

[0020] Furthermore, the step S3 specifically includes: the density of the dot units of each of the photolithography units is distributed in a trend of gradually increasing from a side of the overlapping area close to the non-overlapping area of ​​the photolithography unit to a side away from the non-overlapping area of ​​the photolithography unit.

[0021] The present invention determines that photolithography units with different photolithography structures intersect to form an overlapping area according to the positional relationship between the different photolithography units, and sets point units with gradually decreasing density in the corresponding overlapping areas on different photolithography units, and performs photolithography processing on the areas other than the point units, so as to form different photolithography structures in the areas other than the point units of different photolithography units; when different photolithography units are combined, the point units corresponding to the different photolithography units are mutually embedded; in this way, the point units with gradually decreasing density are set between the different photolithography units, and the photolithography structures corresponding to the different photolithography units form different gradient effects in the overlapping areas, so as to avoid the problem of exposure broadening or obvious seams and contour lines caused by fine lines, so that the photolithography units with different photolithography structures are more beautiful and clear when combined. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present invention, but should not be construed as limiting the present invention. In the accompanying drawings:

[0023] Figure 1 FIG. 1 is a schematic diagram of the positional relationship between the first photolithography unit and the second photolithography unit in the first embodiment of the invention.

[0024] Figure 2 Schematic diagram of the structure of the first photolithography unit in the first embodiment of the present invention.

[0025] Figure 3 FIG. 4 is a schematic structural diagram of the second photolithography unit in the first embodiment of the present invention.

[0026] Figure 4 FIG. 4 is a schematic structural diagram of a first photolithography unit in a second embodiment of the present invention.

[0027] Figure 5 FIG. 4 is a schematic diagram of the positional relationship between the first photolithography unit and the second photolithography unit in the second embodiment of the present invention.

[0028] Figure 6 FIG. 4 is a schematic structural diagram of a first photolithography unit and a second photolithography unit in a second embodiment of the present invention.

[0029] Figure 7 FIG. 4 is a schematic diagram of the positional relationship between the first photolithography unit and the second photolithography unit in the third embodiment of the present invention.

[0030] Figure 8 FIG. 4 is a schematic structural diagram of a first photolithography unit and a second photolithography unit in a third embodiment of the present invention.

[0031] Fig. 9FIG. 4 is a schematic diagram of the positional relationship among the first photolithography unit, the second photolithography unit and the third photolithography unit in the fourth embodiment of the present invention.

[0032] Fig.10 Schematic diagram of the structure of the first photolithography unit, the second photolithography unit and the third photolithography unit in the fourth embodiment of the present invention.

[0033] Figure numerals: 1. first photolithography unit; 2. second photolithography unit; 3. third photolithography unit; 4. overlapping area; 41. first sub-overlapping area; 42. second sub-overlapping area; 43. third sub-overlapping area; 44. overlapping center area; 5. non-overlapping area; 6. hollow area. DETAILED DESCRIPTION

[0034] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0035] The terms "first", "second", "third", "fourth" and the like in the description and claims of the present invention are used to distinguish similar objects and are not necessarily used to describe a particular order or sequence.

[0036] First embodiment.

[0037] See also Figure 1 A composite lithography structure provided in the first embodiment of the present invention includes at least two intersecting lithography units with different lithography structures, and each of the lithography units forms an overlapping area 4 at the intersection; specifically, the overlapping area 4 is consistent for each of the intersecting lithography units, and has the same area and shape.

[0038] Each of the photolithography units is respectively provided with a plurality of dot units in the overlapping area 4, which are used to determine the photolithography area and the non-photolithography area. It should be noted that the photolithography area is the area that needs to be photolithographically processed based on the photolithography unit file; the non-photolithography area is the area other than the area that needs to be photolithographically processed when the photolithography unit is manufactured based on the photolithography unit file, that is, the non-photolithography area that is not photolithographically processed; when different photolithography units are combined, the photolithography areas of different photolithography units in the overlapping area 4 are mutually embedded, that is, the photolithography structure of other intersecting photolithography units can be displayed in the dot unit of one photolithography unit.

[0039] For further information, see Figure 1-Figure 3 The different photolithography units partially intersect to form the overlapping area 4, and each of the photolithography units includes a non-overlapping area 5 corresponding to the overlapping area 4. It should be noted that the non-overlapping area 5 is the part outside the overlapping area 4 of each of the photolithography units.

[0040] Furthermore, the density of the dot units of each of the photolithography units is distributed in a trend of gradually increasing from a side of the overlapping area close to the non-overlapping area of ​​the photolithography unit to a side away from the non-overlapping area of ​​the photolithography unit.

[0041] With the above arrangement, when different photolithography units are combined, the photolithography structures corresponding to the different photolithography units respectively form different gradient effects in the overlapping area 4, which can avoid the problem of exposure broadening or obvious seams and contours caused by fine lines, making the combination of photolithography units with different photolithography structures more beautiful and clear.

[0042] Furthermore, in the lithography unit with the smallest format, the area ratio of the overlapping region to the non-overlapping region is 1:5 to 1:1.

[0043] Further, in this embodiment, please refer to Figure 1 , and also includes a first lithography unit 1 and a second lithography unit 2 having different lithography structures and partially intersecting with each other. Since the overlapping area 4 is formed at the local intersection of the first lithography unit 1 and the lithography unit, the first lithography unit 1 and the second lithography unit 2 respectively include non-overlapping areas 5 corresponding to the overlapping area 4.

[0044] In this embodiment, the dot units include a first dot unit disposed on the first photolithography unit 1 and a second dot unit disposed on the second photolithography unit 2 .

[0045] Specifically, see Figure 2 , Figure 2 The white part located in the overlapping area 4 is the first dot unit, that is, the non-photolithography area of ​​the first photolithography unit 1. The density of the first dot units located on the first photolithography unit 1 gradually increases in the overlapping area 4 along the direction a, and the direction a is the direction extending from the side of the overlapping area 4 close to the non-overlapping area 5 of the first photolithography unit 1 to the side away from the non-overlapping area 5 of the first photolithography unit 1.

[0046] Specifically, see Figure 3 , Figure 3 The black part located in the overlapping area 4 is the second dot unit, that is, the non-photolithography area of ​​the second photolithography unit 2. The density of the second dot units located on the second photolithography unit 2 gradually increases in the overlapping area 4 along the direction b, and the direction b is the direction extending from the side of the overlapping area 4 close to the non-overlapping area 5 of the second photolithography unit 2 to the side away from the non-overlapping area 5 of the second photolithography unit 2.

[0047] The photolithography unit can form different optical structures by using at least one of interference photolithography, direct photolithography and grayscale photolithography. The first photolithography unit 1 is rectangular, and the second photolithography unit 2 is elliptical; specifically, the size of the dot unit is 10 to 100 um; the shape of the dot unit is at least one of a circle, a rectangle, a triangle, and a regular polygon, and the dot unit is composed of pixel points.

[0048] This embodiment also provides a method for manufacturing the composite lithography structure, comprising the following steps:

[0049] S1. Design a first lithography unit file and a second lithography unit file having different lithography structures respectively.

[0050] S2. According to the positional relationship between the first photolithography unit file and the second photolithography unit file, it is determined that the intersection relationship between the two is a partial intersection, and the overlapping area 4 is determined; in this embodiment, the area size of the overlapping area 4 is S1, and the area of ​​a smaller photolithography unit is S2, S1=(1 / 6~1 / 2)*S2.

[0051] S3. According to the overlapped area 4 determined in step S2, point units are respectively set at the positions of the first lithography unit 1 and the second lithography unit 2 corresponding to the overlapped area 4, and the lithography area and non-lithography area of ​​each lithography unit are determined according to the point units. The point unit is a non-lithography area that is not subjected to lithography when the lithography unit is manufactured according to the lithography unit file.

[0052] Specifically, the density of the dot units of the first photolithography unit 1 gradually increases in the overlapping area 4 along a direction a, and the direction a extends from the overlapping area 4 close to the non-overlapping area 5 of the first photolithography unit 1 to a side away from the non-overlapping area 5 of the first photolithography unit 1.

[0053] The density of the dot units of the second photolithography unit 2 gradually increases in the overlapping area 4 along a direction b, and the direction b extends from the overlapping area 4 close to the non-overlapping area 5 of the second photolithography unit 2 to a side away from the non-overlapping area 5 of the second photolithography unit 2.

[0054] S4, manufacturing a lithography unit based on the first lithography unit file and the second lithography unit file obtained in step S3, performing lithography processing of a corresponding lithography structure in the area of ​​each lithography unit file except the dot unit, to obtain a first lithography unit 1 and a second lithography unit 2 with different lithography structures.

[0055] S5. Combining the first photolithography unit 1 and the second photolithography unit 2 obtained in step S4, the first dot unit in the first photolithography unit 1 and the second dot unit in the second photolithography unit 2 are mutually embedded to obtain a composite photolithography structure.

[0056] The above method can identify the overlapping area 4 formed by the intersection of photolithography units with different photolithography structures according to the positional relationship between different photolithography units, and set dot units with gradually decreasing density in the corresponding overlapping areas 4 on different photolithography units, determine the photolithography area that needs to be photolithography processed and the non-photolithography area that does not need to be photolithography processed, and perform photolithography processing on the area other than the dot units, and form different photolithography structures in the first photolithography unit 1 and the second photolithography unit 2 except the dot units; when different photolithography units intersect, the dot units corresponding to the different photolithography units are mutually embedded; in this way, dot units with gradually decreasing density are set between different photolithography units, and the photolithography structures corresponding to the first photolithography unit 1 and the second photolithography unit 2 respectively form different gradient effects in the overlapping areas, which can avoid the problem of exposure broadening or obvious seams and contour lines caused by fine lines, so that the photolithography units with different photolithography structures are more beautiful and clear when combined.

[0057] Second embodiment.

[0058] See also Figure 4-Figure 6 The difference between a composite lithography structure provided by the second embodiment of the present invention and the first embodiment is that in the present embodiment, a group of first lithography units 1 and second lithography units 2 with different lithography structures are included; see Figure 4 The first lithography unit 1 has a hollow area 6, Figure 5 The circular portion closest to the center is the hollow area 6 ; the second photolithography unit 2 is entirely arranged to cover the hollow area 6 , and an overlapping area 4 is formed outside the hollow area 6 .

[0059] Among them, the outer frame of the first lithography unit 1 is a rectangle, and the outer frame of the second lithography unit 2 is a circle; the dot unit includes a first dot unit arranged on the first lithography element and a second dot unit arranged on the second lithography unit 2, and the first dot unit and the second dot unit are non-lithography structure areas, that is, non-lithography areas that are not subjected to lithography processing when the lithography unit is manufactured according to the lithography unit file; the first lithography unit 1 and the second lithography unit 2 both include a non-overlapping area 5 corresponding to the overlapping area 4.

[0060] See also Figure 4-Figure 6 , in this embodiment, Figure 6The area within the white dotted line and outside the black dotted line is the overlapping area 4. Figure 6 The white area within the black dashed line portion is the non-overlapping area 5 of the second photolithography unit 2 of this embodiment; Figure 6 The black part outside the white dotted line is the non-overlapping area 5 of the first photolithography unit 1; Figure 6 The white portion located in the overlapping area 4 is the first dot unit, that is, the non-photolithography area of ​​the first photolithography unit 1; Figure 6 The black portion in the overlapping area 4 is a second dot unit, that is, a non-photolithography area of ​​the second photolithography unit 2 .

[0061] In this embodiment, the area ratio between the overlapping region 4 and the non-overlapping region 5 in the second photolithography unit 2 is 1:1.

[0062] For further information, see Figure 6 The density of the first dot unit gradually increases from the side of the overlapping area 4 close to the non-overlapping area 5 of the first photolithography unit 1 to the direction away from the non-overlapping area 5 of the first photolithography unit 1; the density of the second dot unit gradually increases from the side of the overlapping area 4 close to the non-overlapping area 5 of the second photolithography unit 2 to the side away from the non-overlapping area 5 of the second photolithography unit 2.

[0063] This embodiment also provides a method for manufacturing the composite lithography structure, comprising the following steps:

[0064] S1. Distributed design of a first lithography unit file and a second lithography unit file having different lithography structures.

[0065] S2. According to the positional relationship between the first photolithography unit file and the second photolithography unit file, it is determined that the second photolithography unit 2 is entirely arranged within the outer frame of the first photolithography unit 1, and the second photolithography unit 2 is entirely arranged to cover the hollow area 6, and an overlapping area 4 is formed outside the hollow area 6, that is, the overlapping area 4 is arranged around the non-overlapping area 5 of the second photolithography unit 2, and the overlapping area 4 is ring-shaped.

[0066] Specifically, the dot unit includes a first dot unit arranged on the first photolithography unit and a second dot unit arranged on the second photolithography unit 2, and the first photolithography unit 1 includes a non-overlapping area 5 corresponding to the overlapping area 4. In this embodiment, the area size of the overlapping area 4 is S1, the area of ​​the second photolithography unit 2 is S3, and the area ratio between the overlapping area 4 and the non-overlapping area 5 in the second photolithography unit 2 is 1:1, that is, S3=2*S1.

[0067] S3. According to the overlapped area 4 determined in step S2, point units are respectively set at the positions of the first lithography unit 1 and the second lithography unit 2 corresponding to the overlapped area 4, and the lithography area and non-lithography area of ​​each lithography unit are determined according to the point units. The point unit is a non-lithography area that is not subjected to lithography when the lithography unit is manufactured according to the lithography unit file.

[0068] Specifically, the density of the first dot unit gradually increases from the side of the overlapping area 4 close to the non-overlapping area 5 of the first photolithography unit 1 to the direction away from the non-overlapping area 5 of the first photolithography unit 1; the density of the second dot unit gradually increases from the side of the overlapping area away from the non-overlapping area 5 of the second photolithography unit 2 to the side close to the non-overlapping area 5 of the second photolithography unit 2.

[0069] S4, manufacturing a lithography unit based on the first lithography unit file and the second lithography unit file obtained in step S3, performing lithography processing of a corresponding lithography structure in the area of ​​each lithography unit file except the dot unit, to obtain a first lithography unit 1 and a second lithography unit 2 with different lithography structures.

[0070] S5. Combining the first photolithography unit 1 and the second photolithography unit 2 obtained in step S4, the first dot unit in the first photolithography unit 1 and the second dot unit in the second photolithography unit 2 are mutually embedded to obtain a composite photolithography structure.

[0071] Third embodiment.

[0072] Please refer to Figure 7 The difference between a composite lithography structure provided in the third embodiment of the present invention and the first embodiment is that, in the present embodiment, a first lithography unit 1 and a second lithography unit 2 having different lithography structures and partially intersecting with each other are included to form an overlapping area 4; the first lithography unit 1 and the second lithography unit 2 respectively include a non-overlapping area 5 corresponding to the overlapping area 4; Figure 7 It can be seen that the overlapping area 4 is arranged to be inclined upward and to the right.

[0073] See also Figure 8 , the non-overlapping area 5 of the first lithography unit 1 is Figure 8 The white area located on the upper left side of the black dotted line and within the black outline; the non-overlapping area 5 of the second lithography unit 2 is Figure 8 The black area at the lower right side of the white dotted line; Figure 8 The area formed by the right side of the black dotted line and the left side of the white dotted line is the overlapping area 4; Figure 8 The black part in the overlapping area 4 is the first dot unit, that is, the non-photolithography area of ​​the first photolithography unit 1; Figure 8The white portion in the overlapping area 4 is a second dot unit, that is, a non-photolithography area of ​​the second photolithography unit 2 .

[0074] In this embodiment, the first photolithography unit 1 adopts interference photolithography process to present a photolithography structure with laser effect; the second photolithography unit 2 adopts grayscale photolithography process to present a platinum relief effect. Therefore, the first photolithography unit 1 and the second photolithography unit 2 after different photolithography processes are combined, and the first photolithography unit 1 can present a photolithography structure with platinum relief effect of the second photolithography unit 2 at the first point unit, and similarly, the second photolithography unit 2 can present a photolithography structure with laser effect of the first photolithography unit 1 at the second point unit.

[0075] Fourth embodiment.

[0076] Please refer to Fig.10 The difference between the composite photolithography structure provided in the fourth embodiment of the present invention and the first embodiment is that in the present embodiment, the composite photolithography structure includes a first photolithography unit 1, a second photolithography unit 2 and a third photolithography unit 3 having different photolithography structures and intersecting with each other, the three are arranged adjacent to each other and partially intersect with each other to form an overlapping area 4. It should be noted that Fig.10 The area within the white dotted line is the overlapping area 4 in this embodiment.

[0077] In this embodiment, the dot units include a first dot unit disposed on the first photolithography unit 1 , a second dot unit disposed on the second photolithography unit 2 , and a third dot unit disposed on the third photolithography unit 3 .

[0078] In this example, see Fig. 9 The overlapping area 4 includes an overlapping central area 44 , a first sub-overlapping area 41 , a second sub-overlapping area 42 and a third sub-overlapping area 43 .

[0079] See also Fig. 9 and Fig.10 The overlapping central area 44 is the intersection of the first photolithography unit 1, the second photolithography unit 2 and the third photolithography unit 3. Fig. 9 and Fig.10 The dotted circular portion in FIG. 4 is the overlapping central area 44 .

[0080] See also Fig. 9 and Fig.10 The first sub-overlapping region 41 is the intersection of the first photolithography unit 1 and the second photolithography unit 2 , and the width of the first sub-overlapping region 41 gradually increases from a side close to the overlapping central region 44 to a side away from the overlapping central region 44 .

[0081] See also Fig. 9 and Fig.10 The second sub-overlapping area 42 is the intersection of the second photolithography unit 2 and the third photolithography unit 3; the width of the second sub-overlapping area 42 gradually increases from the side close to the overlapping central area 44 to the side away from the overlapping central area 44.

[0082] See also Fig. 9 and Fig.10 The third sub-overlapping area 43 is the intersection of the first photolithography unit 1 and the third photolithography unit 3; the width of the third sub-overlapping area 43 gradually increases from the side close to the overlapping central area 44 to the side away from the overlapping central area 44.

[0083] See also Fig. 9 and Fig.10 The first point units are distributed in the first sub-overlapping area 41, the overlapping central area 44 and the third sub-overlapping area 43; the second point units are distributed in the first sub-overlapping area 41, the overlapping central area 44 and the second sub-overlapping area 42; the third point units are distributed in the second sub-overlapping area 42, the overlapping central area 44 and the third sub-overlapping area 43.

[0084] See also Fig. 9 and Fig.10 The density of the dot units gradually increases in a clockwise direction from the middle position of the overlapping central area 44 outward.

[0085] The first lithography unit 1, the second lithography unit 2 and the third lithography unit 3 all adopt direct writing lithography technology, and each of them has different computer generated holographic effects.

[0086] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A composite lithography structure, characterized in that: It comprises at least two intersecting lithography units with different lithography structures, each of which forms an overlapping area at the intersection; each of the lithography units is provided with a plurality of point units in the overlapping area for determining the lithography area and the non-lithography area corresponding to the lithography unit; when different lithography units are combined, the lithography areas of different lithography units in the overlapping area are mutually embedded.

2. The composite lithography structure according to claim 1, characterized in that: The different photolithography units partially intersect to form the overlapping area, and each of the photolithography units includes a non-overlapping area corresponding to the overlapping area.

3. The composite lithography structure according to claim 2, characterized in that: The density of the dot units of each of the photolithography units is distributed in a trend of gradually increasing from a side of the overlapping area close to the non-overlapping area of ​​the photolithography unit to a side away from the non-overlapping area of ​​the photolithography unit.

4. The composite lithography structure according to claim 1, characterized in that: In the lithography unit with the smallest format, the area ratio of the overlapping region to the non-overlapping region is 1:5 to 1:

1.

5. The composite lithography structure according to claim 1, characterized in that: The arrangement of the dot units is random.

6. The composite lithography structure according to claim 1, characterized in that: The shape of the point unit is at least one of a circle, a rectangle, and a regular polygon.

7. The composite lithography structure according to claim 1, characterized in that: The size of the dot unit is 10-100 um.

8. A method for manufacturing a composite lithography structure, characterized in that: The method for manufacturing the composite lithography structure according to any one of claims 1 to 7 comprises the following steps: S1. Design at least two lithography unit files with different lithography structures respectively; S2, determining the intersection relationship according to the positional relationship between the lithography unit files of different structures, and then determining the overlapping area; S3, based on the overlapping area, respectively setting a dot unit on each of the lithography unit files to determine the lithography area and non-lithography area of ​​each of the lithography units; S4, manufacturing a lithography unit based on the lithography unit file obtained in step S3, performing corresponding lithography processing on the area of ​​each lithography unit file except the dot unit, to obtain lithography units with different lithography structures; S5, combining the photolithography units obtained in step S4, and interlocking the dot units of different photolithography units to obtain a composite photolithography structure.

9. The method for manufacturing a composite lithography structure according to claim 8, characterized in that: The step S2 specifically includes: different photolithography units partially intersect to form the overlapping area, and each of the photolithography units includes a non-overlapping area corresponding to the overlapping area.

10. The method for manufacturing a composite photolithography structure according to claim 9, characterized in that: The step S3 specifically includes: the density of the dot units of each of the photolithography units is distributed in a trend of gradually increasing from the side of the overlapping area close to the non-overlapping area of ​​the photolithography unit to the side away from the non-overlapping area of ​​the photolithography unit.

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