Intake Assembly, Semiconductor Process Chamber, and Semiconductor Process Method

Abstract

The present application discloses an intake assembly, a semiconductor process chamber and a semiconductor process method, belonging to the field of semiconductor technology. The intake assembly includes an intake window and a switching valve plate connected to each other. The switching valve plate is opposite to the intake window. The intake window is provided with a first gas inlet and a second gas inlet. The switching valve plate can move relative to the intake window between a first position and a second position, and the switching valve plate is provided with a gas path, and the gas path is communicated with the outlet end of the intake assembly; when the switching valve plate is in the first position, the first gas inlet is communicated with the gas path and the second gas inlet is disconnected from the gas path; when the switching valve plate is in the second position, the second gas inlet is communicated with the gas path and the first gas inlet is disconnected from the gas path. In this way, by adjusting the position of the switching valve plate, the gas of the previous process can be directly cut off at the position of the intake window, avoiding the residual gas of the previous process from participating in the next process, which is beneficial to improving the process effect.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to an air intake assembly, a semiconductor process chamber, and a semiconductor process method. Background Art

[0002] In the field of semiconductor processing, the Bosch process refers to a process of depositing a thin film on the lateral edge of the etching in order to prevent or weaken lateral etching in integrated circuit manufacturing. It mainly consists of switching between an etching step dominated by fluorine-based gas and a deposition step dominated by carbon fluorine gas.

[0003] In the prior art, a semiconductor process chamber includes a chamber body, a deposition gas supply device, and an etching gas supply device. The deposition gas supply device is connected to the interior of the chamber body through a first pipeline, and the etching gas supply device is connected to the interior of the chamber body through a second pipeline. Both the first pipeline and the second pipeline are provided with control valves, and the control valves are used to control the on-off of the first pipeline and the second pipeline, thereby controlling the deposition gas or the etching gas to enter the chamber body, thereby realizing the switching process between the etching process and the deposition process.

[0004] When the control valve controls the first pipeline to be connected and the second pipeline to be cut off, the deposition gas enters the chamber body and the etching gas is cut off. However, some of the etching gas remaining in the second pipeline will also enter the chamber body, and then mix with the deposition gas and participate in the process; similarly, when the control valve controls the first pipeline to be cut off and the second pipeline to be connected, the deposition gas is cut off and the etching gas enters the chamber body. However, some of the deposition gas remaining in the first pipeline will also enter the chamber body, and then mix with the etching gas and participate in the process. Therefore, when switching gases, the process gas remaining in the previous process participates in the next process, which will cause the etched side wall to produce an uneven scallop structure. The rough side wall will affect the subsequent process, thereby causing the yield of the device to decrease. Summary of the Invention

[0005] The purpose of the embodiments of the present application is to provide an air intake component, a semiconductor process chamber and a semiconductor process method, which can solve the problem in the related art that residual gas in the air intake component affects the process effect during the gas switching process.

[0006] In a first aspect, an embodiment of the present application provides an air intake assembly, comprising an air intake window and a switching valve plate connected to each other, the switching valve plate being opposite to the air intake window, the air intake window being provided with a first gas inlet and a second gas inlet, the switching valve plate being movable relative to the air intake window between a first position and a second position, and the switching valve plate being provided with an air path, the air path being in communication with an air outlet end of the air intake assembly;

[0007] When the switching valve plate is in the first position, the first gas inlet is in communication with the gas path and the second gas inlet is disconnected from the gas path; when the switching valve plate is in the second position, the second gas inlet is in communication with the gas path and the first gas inlet is disconnected from the gas path.

[0008] Second, an intake assembly according to an embodiment of the present application further includes a first intake unit and a second intake unit.

[0009] The first intake unit includes a first intake pipe, a first extraction pipe, and a first switching valve plate. The intake port of the first extraction pipe and the outlet port of the first intake pipe are arranged side by side, and the first switching valve plate is rotatably arranged at the intake port of the first extraction pipe and the outlet port of the first intake pipe.

[0010] The second intake unit includes a second intake pipe, a second extraction pipe, and a second switching valve plate. The intake port of the second extraction pipe and the outlet port of the second intake pipe are arranged side by side, and the second switching valve plate is rotatably arranged at the intake port of the second extraction pipe and the outlet port of the second intake pipe.

[0011] The first intake unit and the second intake unit alternately communicate with the outlet end of the intake assembly.

[0012] Third, a semiconductor process chamber according to an embodiment of the present application further includes a chamber body and the above-mentioned intake assembly, and the outlet end of the intake assembly is in communication with the chamber body.

[0013] Fourth, a semiconductor process method according to an embodiment of the present application is applied to the intake assembly in the first aspect above. The method includes:

[0014] In the first process step, control the switching valve plate to move to the first position so that the first gas enters the chamber body through the first gas inlet.

[0015] In the second process step, control the switching valve plate to move to the second position so that the second gas enters the chamber body through the second gas inlet.

[0016] Alternately perform the first process step and the second process step.

[0017] Fifth, a semiconductor process method according to an embodiment of the present application is applied to the intake assembly in the second aspect above. The method includes:

[0018] In the first process step, control the first intake unit to communicate with the outlet end of the intake assembly so that the first switching valve plate is in a position blocking the intake port of the first extraction pipe, and the second switching valve plate is in a rotating state.

[0019] In the second process step, control the second intake unit to communicate with the outlet end of the intake assembly, so that the second switching valve plate is in a position blocking the intake port of the second suction pipe, and the first switching valve plate is in a rotating state.

[0020] In the embodiment of the present application, in the solution where the intake assembly includes an intake window and a switching valve plate, by changing the position of the switching valve plate relative to the intake window, it is possible to achieve the communication between the first gas intake port and the outlet end of the intake assembly, or to achieve the communication between the second gas intake port and the outlet end of the intake assembly, and the outlet end of the intake assembly is always in communication with the chamber body. Since the intake window is located at the top of the chamber body adjacent to the chamber body, at the position of the intake window, the switching valve plate directly cuts off the gas of the previous process, effectively preventing the gas remaining from the previous process from entering the chamber body and participating in the next process, and avoiding the mixing of the two process gases to participate in the process, which is beneficial to improving the process effect. Moreover, since the switching valve plate is arranged adjacent to the chamber body, the speed of the process gas entering the chamber body is relatively fast, avoiding the problem of intake delay caused by the flow of the process gas in the pipeline, effectively shortening the intake delay time, so that the pressure control process of the chamber body in the two processes will be relatively fast and accurate, and then making the pressure difference value of the chamber body in the two processes easier to control, which is beneficial to improving the process effect.

[0021] In the solution where the intake assembly includes a first intake unit and a second intake unit, the first intake unit and the second intake unit communicate with the outlet end of the intake assembly alternately. When the first intake unit communicates with the outlet end of the intake assembly, the second switching valve plate can be rotated to the position of opening the second suction pipe, and the second suction pipe sucks the gas in the second intake pipe, that is, sucks away the process gas in the second intake pipe, preventing the remaining process gas from entering the chamber body and mixing with the process gas of the next process to participate in the next process; similarly, when the second intake unit communicates with the outlet end of the intake assembly, the first switching valve plate can be rotated to the position of opening the first suction pipe, and the first suction pipe sucks the gas in the first intake pipe, that is, sucks away the process gas in the first intake pipe, preventing the remaining process gas from entering the chamber body and mixing with the process gas of the next process to participate in the next process, which is beneficial to improving the process effect and then beneficial to improving the yield of the device. Description of the Drawings

[0022] Figure 1 is a schematic structural diagram of a semiconductor process chamber disclosed in an embodiment of the present application;

[0023] Figure 2 is a schematic structural diagram of an intake assembly disclosed in an embodiment of the present application;

[0024] Figure 3 is a cross-sectional view of the intake assembly in the case where the switching valve plate is in the first position disclosed in an embodiment of the present application;

[0025] Figure 4 is a cross-sectional view of the intake assembly when the switching valve plate is in the second position, disclosed in an embodiment of the present application;

[0026] Figure 5 is a top view of the flow equalizing plate, disclosed in an embodiment of the present application;

[0027] Figure 6 is a partial schematic view of the flow equalizing plate, disclosed in an embodiment of the present application;

[0028] Figure 7 is a structural schematic view of the pressure control valve when the exhaust port is in the closed state, disclosed in an embodiment of the present application;

[0029] Figure 8 is a schematic diagram of the operation of the pressure control valve when the exhaust port is in the open state, disclosed in an embodiment of the present application;

[0030] Figure 9 is a structural schematic view of a semiconductor process chamber, disclosed in another embodiment of the present application;

[0031] Figure 10 is a structural schematic view of the intake assembly, disclosed in another embodiment of the present application;

[0032] Figure 11 is a schematic diagram of the operation of the first rotating valve plate, disclosed in another embodiment of the present application;

[0033] Figure 12 is a flowchart of a semiconductor process method, disclosed in an embodiment of the present application;

[0034] Figure 13 is a timing diagram of a semiconductor process method, disclosed in an embodiment of the present application.

[0035] Description of reference numerals:

[0036] 100 - chamber body, 101 - intake port, 110 - base, 111 - wafer, 120 - lining,

[0037] 200 - intake assembly, 210 - intake window, 211 - first gas intake port, 212 - second gas intake port, 220 - switching valve plate, 221 - first gas passage section, 222 - second gas passage section, 231 - first blocking member, 232 - second blocking member, 241 - first stop member, 242 - second stop member, 251 - first fixing member, 252 - second fixing member, 260 - flow equalizing plate, 261 - flow equalizing groove, 262 - flow equalizing hole, 271 - first sealing member, 272 - second sealing member, 273 - third sealing member,

[0038] 223 - First switching valve plate, 224 - Second switching valve plate,

[0039] 281 - First intake pipe, 282 - Second intake pipe, 283 - First exhaust pipe, 284 - Second exhaust pipe, 285 - Outlet pipe, 285a - Main pipeline, 285b - First pipe section, 285c - Second pipe section,

[0040] 291 - Third control valve, 292 - Fourth control valve,

[0041] 300 - Vacuum pump, 310 - Molecular pump, 320 - Dry pump,

[0042] 400 - Pressure control valve, 410 - Valve plate, 420 - Driving member,

[0043] 510 - First gas flow controller, 520 - First exhaust pipeline, 530 - First control valve, 531 - First needle valve, 532 - First pneumatic shut-off valve,

[0044] 610 - Second gas flow controller, 620 - Second exhaust pipeline, 630 - Second control valve, 631 - Second needle valve, 632 - Second pneumatic shut-off valve. Detailed implementation manners

[0045] Next, the technical solutions in the embodiments of the present application will be clearly described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present application.

[0046] The terms "first", "second", etc. in the description and claims of the present application are used to distinguish similar objects, rather than to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present application can be implemented in an order different from those illustrated or described herein, and the objects distinguished by "first", "second", etc. generally belong to the same category, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the description and claims means at least one of the connected objects, and the character " / " generally indicates an "or" relationship between the associated objects before and after.

[0047] Next, in conjunction with the accompanying drawings, the intake assembly, semiconductor process chamber, and semiconductor process method provided by the embodiments of the present application will be described in detail through specific embodiments and their application scenarios.

[0048] In some alternative embodiments of the present application, refer to Figure 1As shown, the intake assembly 200 may include an intake window 210 and a switching valve plate 220. The intake window 210 is used to introduce different gases, and the switching valve plate 220 is used to switch the gases so that the gases flow to the outlet end of the intake assembly 200.

[0049] The switching valve plate 220 is opposite to and adjacent to the intake window 210. The intake window 210 is provided with a first gas inlet 211 and a second gas inlet 212. Optionally, the first gas inlet 211 is used to introduce etching gas, and the second gas inlet 212 is used to introduce deposition gas. Of course, the first gas inlet 211 and the second gas inlet 212 can also introduce other different types of process gases respectively. Optionally, the first gas inlet 211 can be connected to an external first gas flow controller 510, and the second gas inlet 212 can be connected to an external second gas flow controller 610.

[0050] The switching valve plate 220 is connected to the intake window 210. The switching valve plate 220 is used to control whether the first gas inlet 211 and the second gas inlet 212 are connected to the outlet end of the intake assembly. The switching valve plate 220 is movable relative to the intake window 210. Optionally, the switching valve plate 220 is movable relative to the intake window 210. The switching valve plate 220 can be driven to move manually or by a moving drive member. The moving drive member can be a linear drive member such as a linear module or a cylinder; or, the switching valve plate 220 is rotatable relative to the intake window 210. The switching valve plate 220 rotates within its own plane to connect the gas path to the first gas inlet 211 or the second gas inlet 212. The switching valve plate 220 can be driven to rotate manually or by a drive source. The drive source can be a drive source that provides rotational power such as a motor or a pneumatic motor.

[0051] The switching valve plate 220 is movable relative to the air inlet window 210 between a first position and a second position. The switching valve plate 220 is provided with an air path which is communicated with the air outlet end of the air inlet assembly 200. When the switching valve plate is in the first position, the first gas inlet 211 is communicated with the air path, and the second gas inlet 212 is disconnected from the air path. At this time, the first gas enters the chamber body through the air inlet assembly 200, thereby starting the first process; when the switching valve plate 220 is in the second position, the second gas inlet 212 is communicated with the air path, and the first gas inlet 211 is disconnected from the air path. At this time, the second gas enters the chamber body 100 through the air inlet assembly 200, thereby starting the second process. Optionally, the first gas inlet 211 is introduced with etching gas, and the first process is an etching process; the second gas inlet 212 is introduced with deposition gas, and the second process is a deposition process. In this way, the switching valve plate 220 only needs to move a small distance to make the air path on it communicate with the first gas inlet 211 or communicate with the second gas inlet 212 correspondingly, so as to switch the first gas and the second gas.

[0052] That is to say, by changing the movement position of the switching valve plate 220, the first gas or the second gas located at the air inlet can quickly enter the chamber body 100 through the air inlet assembly 200.

[0053] In this embodiment, by changing the position of the switching valve plate 220, it is possible to achieve the communication between the first gas inlet and the air outlet end of the air inlet assembly, or to achieve the communication between the second gas inlet and the air outlet end of the air inlet assembly, and the air outlet end of the air inlet assembly is always communicated with the chamber body. Since the air inlet window 210 is located at the top of the chamber body 100, the switching valve plate 220 directly cuts off the previous process gas at the position of the air inlet window 210, effectively avoiding the residual gas of the previous process from entering the chamber body 100 and participating in the next process, and avoiding the mixing of the two process gases to participate in the process, which is beneficial to improving the process effect. Moreover, since the switching valve plate is arranged adjacent to the chamber body 100, the process gas enters the chamber body 100 at a faster speed, avoiding the problem of air inlet delay caused by the flow of the process gas in the pipeline, effectively shortening the air inlet delay time, so that the pressure control process of the chamber body 100 in the two processes will be relatively fast and accurate, and then it is easier to control the pressure difference value of the chamber body 100 in the two processes.

[0054] Optionally, the first gas inlet 211 is used to introduce etching gas, and the second gas inlet 212 is used to introduce deposition gas. The two processes are an etching process and a deposition process respectively. The air inlet assembly in this embodiment can be used for Bosch etching process. The rapid switching between the etching process and the deposition process can effectively avoid the formation of non-smooth scallop structures on the side walls of the deep holes obtained by etching, making the side walls of the deep holes smoother and avoiding affecting the subsequent processes, which is beneficial to improving the yield of the device.

[0055] In an alternative embodiment, referring to Figure 2 as shown, the first gas inlet 211 and the second gas inlet 212 are arranged in pairs. In the circumferential direction of the intake window 210, multiple pairs of the first gas inlet 211 and the second gas inlet 212 are arranged at intervals. In Figure 2 the example, 6 pairs of the first gas inlet 211 and the second gas inlet 212 are exemplarily shown. Those skilled in the art can understand that more or fewer pairs of the first gas inlet 211 and the second gas inlet 212 are also feasible. Correspondingly, multiple gas paths are arranged at intervals, and each gas path corresponds to each pair of the first gas inlet 211 and the second gas inlet 212 respectively. By adopting this embodiment, through multiple pairs of the second gas inlets 212 and the first gas inlets 211, simultaneous intake of multiple second gas inlets 212 or simultaneous intake of multiple first gas inlets 211 is realized. On the basis of improving the intake efficiency and process efficiency, the outlet area is increased, which is beneficial to improving the intake uniformity.

[0056] Optionally, the intake window 210 can be a circular structure. The second gas inlet 212 and the first gas inlet 211 can be opened on the circumferential surface of the intake window 210, or can be opened on the upper end surface of the intake window 210. The embodiments of the present application do not limit the opening positions of the second gas inlet 212 and the first gas inlet 211.

[0057] In this embodiment, in the circumferential direction of the intake window 210, for example, six pairs of the second gas inlet 212 and the first gas inlet 211 are arranged at intervals, and for example, six gas paths are arranged at intervals, and each gas path corresponds to each pair of the second gas inlet 212 and the first gas inlet 211 respectively.

[0058] Of course, in other embodiments, the intake window 210 can also be provided with one first gas inlet 211 and one second gas inlet 212.

[0059] In an alternative embodiment, referring to Figures 1-4 as shown, the intake assembly 200 further includes a plugging member. The plugging member is arranged between the intake window 210 and the switching valve plate 220. The gas path includes a first gas path segment 221 and a second gas path segment 222. One end of the first gas path segment 221 and one end of the second gas path segment 222 are respectively communicated with the outlet end of the intake assembly. The plugging member selectively plugs the first gas path segment 221 or the second gas path segment 222 according to the movement position of the switching valve plate 220. Optionally, the plugging member can be an elastic structure or a rigid structure. The embodiments of the present application do not specifically limit the structure of the plugging member.

[0060] Referring to Figure 3As shown, when the switching valve plate 220 is in the first position, the first gas inlet 211 is connected to the other end of the first gas path section 221, and the blocking member blocks the other end of the second gas path section 222, so that the second gas inlet 212 cannot be connected to the second gas path section 222; Figure 4 As shown, when the switching valve plate 220 is in the second position, the second gas inlet 212 is in communication with the other end of the second gas path segment 222, and the blocking member blocks the other end of the first gas path segment 221, thereby preventing the first gas inlet 211 from communicating with the first gas path segment 221. Alternatively, when the switching valve plate 220 is in the first position, the first gas inlet 211 is opposite to the first gas path segment 221, and the second gas inlet 212 is staggered from the second gas path segment 222; when the switching valve plate 220 is in the second position, the first gas inlet 211 is staggered from the first gas path segment 221, and the second gas inlet 212 is opposite to the second gas path segment 222.

[0061] According to the movement position of the switching valve plate 220, the sealing member directly blocks the first gas section 221 or the second gas section 222 to realize whether the first gas inlet 211 is connected to the first gas section 221 and whether the second gas inlet 212 is connected to the second gas section 222, thereby avoiding part of the first gas from flowing into the first gas section 221 when the first gas inlet 211 is not connected to the first gas section 221, and also avoiding part of the second gas from flowing into the second gas section 222 when the second gas inlet 212 is not connected to the second gas section 222, which is beneficial to improving the isolation effect of gas during the process.

[0062] Moreover, the corresponding gas path section is blocked by the blocking member. When one of the first gas and the second gas flows to the gas outlet end of the air inlet component 200, the other is in a holding state. Then, the air pressure of the gas path section corresponding to the gas in the holding state gradually rises. When the switching valve plate 220 moves to release the gas, the gas will flow into the corresponding gas path section faster, which is beneficial to increase the gas switching speed and thus improve the process effect.

[0063] Of course, in other embodiments, the air intake assembly may not be provided with a sealing member. When the switching valve plate 220 is in the first position, the switching valve plate 220 directly blocks the second gas inlet 212, so that the second gas inlet 212 is not connected to the gas circuit; when the switching valve plate 220 is in the second position, the switching valve plate 220 directly blocks the first gas inlet 211, so that the first gas inlet 211 is not connected to the gas circuit.

[0064] In an alternative embodiment, the number of the blocking members is one, and the position of the blocking member relative to the air inlet window 210 is fixed. When the switching valve plate 220 is in the first position, the blocking member blocks the second gas passage section 222 to prevent the second gas from entering the chamber body 100 through the gas path; when the switching valve plate 220 is in the second position, the blocking member blocks the first gas passage section 221 to prevent the first gas from entering the chamber body 100 through the gas path.

[0065] In another embodiment, the number of the blocking members is at least two, including a first blocking member 231 and a second blocking member 232. The first blocking member 231 is disposed at the inlet end of the first gas passage section 221, and the second blocking member 232 is disposed at the inlet end of the second gas passage section 222. The blocking members are of an elastic structure, and the positions of the first blocking member 231 and the second blocking member 232 relative to the air inlet window 210 are fixed. During the movement of the switching valve plate 220, the first blocking member 231 and the second blocking member 232 can undergo elastic deformation, thereby changing the shapes of the first blocking member 231 and the second blocking member 232. The deformation state of the first blocking member 231 determines whether the first blocking member 231 blocks the first gas passage section 221. Similarly, the deformation state of the second blocking member 232 determines whether the second blocking member 232 blocks the second gas passage section 222.

[0066] When the switching valve plate 220 is in the first position, as Figure 3 shown, the first blocking member 231 is in an elastic deformation state, the shape of the first blocking member 231 changes, and the first blocking member 231 no longer blocks the first gas passage section 221, so that the first gas inlet 211 is communicated with the other end of the first gas passage section 221, and the second blocking member 232 blocks the other end of the second gas passage section 222. When the switching valve plate 220 is in the second position, as Figure 4 shown, the second blocking member 232 is in an elastic deformation state, the shape of the second blocking member 232 changes, and the second blocking member 232 no longer blocks the second gas passage section 222, so that the second gas inlet 212 is communicated with the other end of the second gas passage section 222, and the first blocking member 231 blocks the other end of the first gas passage section 221.

[0067] Optionally, when the switching valve plate 220 is in the first position, as Figure 3 shown, the first blocking member 231 is in a compressed state, so the volume of the first blocking member 231 is small, and the first blocking member 231 does not block the other end of the first gas passage section 221. At the same time, the second blocking member 232 does not undergo elastic deformation, that is, the second blocking member 232 is in a relaxed state, and the volume of the second blocking member 232 is large, so the second blocking member 232 directly blocks the other end of the second gas passage section 222; when the switching valve plate 220 is in the second position, as Figure 4As shown, the first sealing member 231 does not undergo elastic deformation, that is, the first sealing member 231 is in a diastolic state, and the volume of the first sealing member 231 is relatively large. Therefore, the first sealing member 231 directly seals the other end of the first air passage section 221. At the same time, the second sealing member 232 is in a compressed state, and the volume of the second sealing member 232 is relatively small. Therefore, the second sealing member 232 does not seal the other end of the second air passage section 222.

[0068] In this embodiment, at least two elastic sealing members are provided, and whether to seal the corresponding air passage section is determined by whether the sealing member undergoes elastic deformation. The sealing effect of the sealing member that undergoes elastic deformation is better, and the sealing performance is improved.

[0069] In an alternative embodiment, the intake assembly 200 further includes a first stopper 241 and a first fixing member 251. The first stopper 241 and the first fixing member 251 are respectively located on both sides of the first sealing member 231. The first stopper 241 is connected to the intake window 210, and the first fixing member 251 is connected to the switching valve plate 220. During the process of the switching valve plate 220 switching from the second position to the first position, the distance between the first stopper 241 and the first fixing member 251 changes, and the first sealing member 231 is located between them. Therefore, the first stopper 241 and the first fixing member 251 squeeze the first sealing member 231 to cause the first sealing member 231 to undergo elastic deformation. Among them, both the first stopper 241 and the first fixing member 251 can be in a block structure. Of course, they can also be in other structures. The embodiments of the present application do not limit the structures of the first stopper 241 and the first fixing member 251.

[0070] Optionally, the first stopper 241 and the intake window 210 can be fixedly connected by welding, bonding, etc., and the position of the first stopper 241 relative to the intake window 210 is fixed; the first fixing member 251 and the switching valve plate 220 can also be fixedly connected by welding, bonding, etc. to achieve relative fixation of the first fixing member 251 and the switching valve plate 220, and the first fixing member 251 moves with the switching valve plate 220.

[0071] In this embodiment, it is directly used whether the first stopper 241 and the first fixing member 251 squeeze the first sealing member 231 to control whether the first sealing member 231 undergoes elastic deformation, that is, the movement position of the switching valve plate 220 is used to directly control whether the first sealing member 231 undergoes elastic deformation. In this way, through a mechanical structure, it is beneficial to accurately change the deformation state of the first sealing member 231 and avoid the situation that the first sealing member 231 cannot accurately seal the first air passage section 221 due to abnormal conditions such as power failure when using an electronic control method.

[0072] Of course, in other embodiments, the first plugging member 231 may be an electro-deformable element, and whether the first plugging member 231 generates elastic deformation is controlled by whether the first plugging member 231 is energized; alternatively, the first plugging member 231 may be a temperature-deformable element, and whether the first plugging member 231 generates elastic deformation is controlled by whether the first plugging member 231 is heated.

[0073] In an alternative embodiment, the intake assembly 200 further includes a second blocking member 242 and a second fixing member 252. The second blocking member 242 and the second fixing member 252 are respectively located on both sides of the second plugging member 232. The second blocking member 242 is connected to the intake window 210, and the second fixing member 252 is connected to the switching valve plate 220. During the process of the switching valve plate 220 switching from the first position to the second position, the distance between the second blocking member 242 and the second fixing member 252 changes, and the second plugging member 232 is located therebetween. Therefore, the second blocking member 242 and the second fixing member 252 squeeze the second plugging member 232 to cause the second plugging member 232 to generate elastic deformation. Wherein, both the second blocking member 242 and the second fixing member 252 may be in a block structure. Of course, they may also be in other structures, and the embodiments of the present application do not limit the structures of the second blocking member 242 and the second fixing member 252.

[0074] Optionally, the second blocking member 242 and the intake window 210 may be fixedly connected by welding, bonding or other means, and the position of the second blocking member 242 relative to the intake window 210 is fixed; the second fixing member 252 and the switching valve plate 220 may also be fixedly connected by welding, bonding or other means to realize the relative fixation of the second fixing member 252 and the switching valve plate 220, and the second fixing member 252 moves with the switching valve plate 220.

[0075] In this embodiment, whether the second plugging member 232 generates elastic deformation is directly controlled by whether the second blocking member 242 and the second fixing member 252 squeeze the second plugging member 232, that is, whether the second plugging member 232 generates elastic deformation is directly controlled by the movement position of the switching valve plate 220. In this way, through the mechanical structure, it is beneficial to accurately change the deformation state of the second plugging member 232, and avoid the situation that the second plugging member 232 cannot accurately block the second air passage section 222 due to abnormal conditions such as power failure when using an electric control method.

[0076] Of course, in other embodiments, the second plugging member 232 may be an electro-deformable element, and whether the second plugging member 232 generates elastic deformation is controlled by whether the second plugging member 232 is energized; alternatively, the second plugging member 232 may be a temperature-deformable element, and whether the second plugging member 232 generates elastic deformation is controlled by whether the second plugging member 232 is heated.

[0077] In summary, referring to Figure 3 and Figure 4As shown, during the process of the switching valve plate 220 moving from the second position to the first position, the distance between the first stopper 241 and the first fixing member 251 decreases, and the first sealing member 231 is compressed. Therefore, the first sealing member 231 cannot block the first gas passage section 221. However, the distance between the second stopper 242 and the second fixing member 252 increases, and the second sealing member 232 is not compressed. The second sealing member 232 blocks the second gas passage section 222. The first gas inlet 211 is communicated with the chamber body 100 through the first gas passage section 221, and the first process can be started in the chamber body 100. During the process of the switching valve plate 220 moving from the first position to the second position, the distance between the first stopper 241 and the first fixing member 251 increases, and the first sealing member 231 is not compressed. Therefore, the first sealing member 231 blocks the first gas passage section 221. However, the distance between the second stopper 242 and the second fixing member 252 decreases, and the second sealing member 232 is compressed. The second sealing member 232 cannot block the second gas passage section 222. The second gas inlet 212 is communicated with the chamber body 100 through the second gas passage section 222, and the second process can be started in the chamber body 100.

[0078] In an alternative embodiment, referring to Figure 3 and Figure 4 As shown, the intake assembly 200 further includes a first sealing member 271. The first sealing member 271 is disposed between the switching valve plate 220 and the intake window 210. And the first sealing member 271 is located between the second gas inlet 212 and the first gas inlet 211 to isolate the second gas inlet 212 and the first gas inlet 211. Among them, the first sealing member 271 can be a sealing structure such as a sealing ring or a sealing strip, or other sealing structures.

[0079] Optionally, the switching valve plate 220 can be provided with a slot. The first gas inlet 211 and the second gas inlet 212 can be communicated with the gas passage through the slot. The first sealing member 271 is disposed in the slot, and the first sealing member 271 is in a strip structure. The two ends of the first sealing member 271 respectively abut against the wall surfaces of the slot, dividing the slot into two parts, and these two parts are respectively communicated with the first gas inlet 211 and the second gas inlet 212, thereby sealing and isolating the second gas inlet 212 and the first gas inlet 211.

[0080] By adopting this embodiment, the second gas inlet 212 is isolated from the first gas inlet 211 by the first sealing member 271, avoiding gas leakage between the first gas inlet 211 and the second gas inlet 212, which is beneficial to improving the sealing performance of the intake assembly 200.

[0081] In an alternative embodiment, the intake assembly 200 further includes a second seal 272 disposed between the intake window 210 and the switching valve plate 220 to seal the gap between the intake window 210 and the switching valve plate 220. Optionally, the second seal 272 may be an O-ring that surrounds the first gas inlet 211 and the second gas inlet 212. Of course, the second seal 272 may also be other sealing structures. Further optionally, a second seal groove is provided on the side of the intake window 210 facing the switching valve plate 220, and the second seal 272 is disposed in the second seal groove.

[0082] With this embodiment, the second seal 272 is used to seal the gap between the intake window 210 and the switching valve plate 220, preventing the first gas and the second gas from flowing out through the gap between the intake window 210 and the switching valve plate 220, which is beneficial to improving the sealing performance.

[0083] Of course, in other embodiments, the intake assembly 200 may not be provided with the first seal 271 and the second seal 272, and the sealing performance can be improved by increasing the contact tightness between the switching valve plate 220 and the intake window 210 to prevent gas leakage and cross leakage.

[0084] In the solution of the present application, referring to Figures 2-6 as shown, the intake assembly 200 further includes a flow equalizing plate 260 located on the side of the switching valve plate 220 facing away from the intake window 210. The flow equalizing plate 260 is provided with a plurality of flow equalizing holes 262, and the gas path is communicated with the outlet end of the intake assembly 200 through each flow equalizing hole 262.

[0085] With this embodiment, the flow equalizing holes 262 on the flow equalizing plate 260 are used to split the first gas or the second gas flowing into the switching valve plate 220, so that the first gas or the second gas flows out more evenly, which is beneficial to improving the process uniformity.

[0086] Of course, in other embodiments, the intake assembly 200 may not be provided with the flow equalizing plate 260, and the gas path of the switching valve plate 220 is directly communicated with the outlet end of the intake assembly 200.

[0087] In an alternative embodiment, the flow equalizing holes 262 on the flow equalizing plate 260 are directly communicated with the gas path.

[0088] In another embodiment, the flow equalizing plate 260 is further provided with a flow equalizing groove 261. The flow equalizing groove 261 and the switching valve plate 220 form a flow equalizing space. The flow equalizing groove 261 communicates with a plurality of flow equalizing holes 262 and a gas path, that is, the gas path communicates with the outlet end of the intake assembly 200 through the flow equalizing groove 261 and the flow equalizing holes 262. Optionally, the flow equalizing groove 261 can be a circular groove or other shaped grooves, as long as it can communicate with each flow equalizing hole 262. With this embodiment, before the process gas enters the flow equalizing holes 262 from the first gas inlet 211 or the second gas inlet 212, it first diffuses and mixes through the flow equalizing groove 261, and then further equalizes the gas through each flow equalizing hole 262, which is beneficial to improving the flow equalizing performance of the flow equalizing plate 260.

[0089] In an embodiment where a plurality of second gas inlets 212 and first gas inlets 211 are provided, referring to Figure 5 and Figure 6 as shown, the flow equalizing plate 260 is provided with a plurality of flow equalizing regions along its circumferential direction. Each flow equalizing region is respectively provided with a flow equalizing groove 261 and a plurality of flow equalizing holes 262. The flow equalizing groove 261 corresponds to the first gas inlet 211 and the second gas inlet 212 one by one.

[0090] In an alternative embodiment, the intake assembly 200 further includes a third seal 273. The third seal 273 is disposed between the flow equalizing plate 260 and the switching valve plate 220 to seal the gap between the flow equalizing plate 260 and the switching valve plate 220. Optionally, the third seal 273 can be a sealing ring or other sealing structures; a third seal 273 is provided outside each flow equalizing region of the flow equalizing plate 260. Further optionally, each flow equalizing region of the flow equalizing plate 260 is provided with a third seal groove, and the third seal 273 is disposed in the third seal groove.

[0091] With this embodiment, the gap between the flow equalizing plate 260 and the switching valve plate 220 is sealed by the third seal 273, preventing the first gas and the second gas from flowing out through the gap therebetween, which is beneficial to further improving the sealing performance.

[0092] Of course, in other embodiments, the intake assembly 200 may not be provided with the third seal 273, and the sealing performance can be improved by increasing the contact tightness between the switching valve plate 220 and the flow equalizing plate 260 to prevent gas leakage and air leakage.

[0093] Based on the intake assembly 200 disclosed in the present application, an embodiment of the present application further discloses a semiconductor process chamber. Referring to Figure 1As shown, the semiconductor process chamber includes a chamber body 100 and the gas inlet assembly 200 in the above embodiment. The chamber body 100 provides a place for the semiconductor process, and the inside of the chamber body 100 is in a vacuum environment; the gas outlet end of the gas inlet assembly 200 is communicated with the chamber body 100, and the gas inlet assembly 200 is used to supply process gas into the chamber body 100. Optionally, the chamber body 100 is provided with a gas inlet 101, and the gas inlet assembly 200 is arranged at the gas inlet 101. Further optionally, an inlet window 210 is located at the gas inlet 101, and the inlet window 210 is used to seal the gas inlet 101.

[0094] In this embodiment, the semiconductor process chamber can be applied to the Bosch process. The process gas includes an etching gas and a deposition gas. The etching gas can be a fluorine-based gas, and the deposition gas can be a carbon-based gas.

[0095] The semiconductor process chamber uses the above gas inlet assembly 200 to be able to realize the rapid switching of the first gas and the second gas, avoid the problem of gas inlet delay in the chamber body 100, and is beneficial to accurately control the pressure difference value in the chamber body 100 during different process steps. This semiconductor process chamber can be used, for example, to perform the Bosch etching process to etch high aspect ratio holes. Since the etching and deposition gases can be rapidly switched, the side walls of the etched holes are smoother, which is beneficial to improving the yield of the device.

[0096] Optionally, a susceptor 110 is provided inside the chamber body 100. The susceptor 110 is used to carry a wafer 111. The wafer 111 can be a silicon wafer. A lining 120 is provided on the outer periphery of the susceptor 110 to prevent the process gas from contaminating the inner wall of the chamber body 100 or other devices inside the chamber body 100.

[0097] In the solution of this application, with reference to Figure 1 As shown, the chamber body 100 is provided with an exhaust port. The semiconductor process chamber further includes a pressure control valve 400. The pressure control valve 400 is arranged at the exhaust port to adjust the opening degree of the exhaust port. Among them, the pressure control valve 400 can be a solenoid valve, a butterfly valve, a ball valve or other valve bodies that can achieve the effects of opening and closing and adjustment. The embodiments of this application do not limit the type of the pressure control valve 400. In this way, by adjusting the pressure control valve 400, the first gas or the second gas that has completed the process is discharged out of the chamber body 100 through the exhaust port, which is convenient for the chamber body 100 to perform the next process step and realizes the rapid switching of different process steps.

[0098] Optionally, the semiconductor process chamber further includes a vacuum pump 300. The inlet end of the vacuum pump 300 is communicated with the exhaust port, and the vacuum pump 300 provides suction power. The number of the vacuum pumps 300 is at least two, including a dry pump 320 and a molecular pump 310. The inlet end of the molecular pump 310 is directly communicated with the exhaust port, and the inlet end of the dry pump 320 is directly communicated with the outlet end of the molecular pump 310. The molecular pump 310 is suitable for pumping air in a high-vacuum environment, and the dry pump 320 is suitable for pumping air in a relatively low-vacuum environment.

[0099] In an alternative embodiment, the pressure control valve 400 includes a valve plate 410 and a driving member 420. The driving member 420 is connected to the valve plate 410, and the driving member 420 drives the valve plate 410 to rotate to increase or decrease the opening degree of the exhaust port. Optionally, the driving member 420 can be a driving source capable of generating rotational power, such as an electric motor or a pneumatic motor.

[0100] In another embodiment, referring Figure 7 and Figure 8 as shown, the pressure control valve 400 includes at least two valve plates 410 and a driving member 420. Each valve plate 410 is rotatably disposed at the exhaust port to open or close the exhaust port. The driving member 420 is respectively connected to each valve plate 410, and the driving member 420 can drive each valve plate 410 to rotate simultaneously to increase or decrease the opening degree of the exhaust port. Optionally, the number of the driving members 420 is at least two, and the driving members 420 correspond to the valve plates 410 one by one, and each driving member 420 drives the corresponding valve plate 410 to rotate.

[0101] During the process of adjusting the opening degree of the exhaust port, at least two valve plates 410 act simultaneously. Compared with the previous embodiment, the rotation stroke of each valve plate 410 is reduced, that is, the rotation angle of each valve plate 410 is reduced. Therefore, the driving time of the driving member 420 is shortened, the action time of the pressure control valve 400 is shortened, the vacuum pump 300 can pump air quickly, and the switching efficiency between the etching process and the deposition process is further improved.

[0102] In an alternative embodiment, referring Figure 1 as shown, the semiconductor process chamber further includes a first gas flow controller 510 and a first suction pipeline 520. The first end of the first suction pipeline 520 and the first gas inlet 211 are respectively communicated with the outlet end of the first gas flow controller 510, and the second end of the first suction pipeline 520 is communicated with the inlet end of the vacuum pump �. Optionally, the first gas inlet 211 is communicated with the outlet end of the first gas flow controller 510 through a first pipeline. The first gas flow controller 510 controls the flow rate of the first gas entering the first gas inlet 211. The first end of the first suction pipeline 520 is directly communicated with the first pipeline, and the second end of the first suction pipeline 520 is communicated with the inlet end of the dry pump 320.

[0103] The first air extraction pipeline 520 is provided with a first control valve 530. Optionally, the first control valve 530 includes a first needle valve 531 and a first pneumatic stop valve 532. The first needle valve 531 and the first pneumatic stop valve 532 are arranged at intervals on the first air extraction pipeline 520. In this way, the on-off of the first air extraction pipeline 520 is controlled by the first pneumatic stop valve 532, and the air flow rate of the first air extraction pipeline 520 can be accurately adjusted by the first needle valve 531.

[0104] With this embodiment, when an abnormality occurs between the first gas inlet 211 and the first gas flow controller 510 and the first gas inlet 211 cannot intake gas normally, the first control valve 530 is used to conduct the first air extraction pipeline 520, so that the first gas enters the vacuum pump 300 through the first air extraction pipeline 520, avoiding excessive air pressure caused by air holding.

[0105] In an alternative embodiment, the semiconductor process chamber further includes a second gas flow controller 610 and a second air extraction pipeline 620. The first end of the second air extraction pipeline 620 and the second gas inlet 212 are respectively communicated with the outlet end of the second gas flow controller 610, and the second end of the second air extraction pipeline 620 is communicated with the inlet end of the vacuum pump 300. Optionally, the second gas flow controller 610 is communicated with the outlet end of the second gas flow controller 610 through a second pipeline. The second gas flow controller 610 controls the flow rate of the second gas entering the second gas inlet 212. The first end of the second air extraction pipeline 620 is directly communicated with the second pipeline, and the second end of the second air extraction pipeline 620 is communicated with the inlet end of the dry pump 320.

[0106] The second air extraction pipeline 620 is provided with a second control valve 630. Optionally, the second control valve 630 includes a second needle valve 631 and a second pneumatic stop valve 632. The second needle valve 631 and the second pneumatic stop valve 632 are arranged at intervals on the second air extraction pipeline 620. In this way, the on-off of the second air extraction pipeline 620 is controlled by the second pneumatic stop valve 632, and the air flow rate of the second air extraction pipeline 620 can be accurately adjusted by the second needle valve 631.

[0107] With this embodiment, when an abnormality occurs between the second gas inlet 212 and the second gas flow controller 610 and the second gas inlet 212 cannot intake gas normally, the second control valve 630 is used to conduct the second air extraction pipeline 620, so that the second gas enters the vacuum pump 300 through the second air extraction pipeline 620, avoiding excessive air pressure caused by air holding.

[0108] In an alternative embodiment, the semiconductor process chamber further includes a pressure detection element disposed within the chamber body 100 to detect the air pressure within the chamber body 100. The pressure detection element may be, but is not limited to, a pressure sensor, and the pressure detection element is communicatively connected to the pressure control valve 400. When the first gas inlet 211 is in communication with the gas path, the opening degree of the pressure control valve 400 is a first opening degree corresponding to the pressure value detected by the pressure detection element, so that the chamber body 100 is at a first air pressure value; when the second gas inlet 212 is in communication with the gas path, the opening degree of the pressure control valve 400 is a second opening degree corresponding to the pressure value detected by the pressure detection element, so that the chamber body 100 is at a second air pressure value. Wherein, the difference between the first air pressure value and the second air pressure value is within a preset pressure difference range.

[0109] Optionally, the pressure control range of the pressure control valve 400 is 30 mTorr - 200 mTorr, the first air pressure value may be 75 mTorr, the second air pressure value may be 55 mTorr, the preset pressure difference range may be 10 mTorr - 30 mTorr, and the difference between the first air pressure value and the second air pressure value is 20 mTorr, so the difference between the two is within the preset pressure difference range. Of course, the first air pressure value and the second air pressure value may also be other values, and the preset pressure difference range is set as needed.

[0110] It should be noted that during the etching process, the higher the pressure of the chamber body 100, the faster the etching rate; during the deposition process, the lower the pressure of the chamber body 100, the higher the deposition uniformity. In an ideal state, when the difference between the first air pressure value and the second air pressure value reaches 150 mTorr, the etching rate and the yield are higher.

[0111] By adopting this embodiment, the opening degree of the pressure control valve 400 is adjusted according to the air pressure of the chamber body 100, so that the chamber body 100 is maintained at appropriate air pressure values respectively during the first process and the second process, which is beneficial to controlling the pressure difference of the chamber body 100 within an appropriate range during the first process and the second process, and further beneficial to taking into account the process efficiency and the process uniformity.

[0112] In an alternative embodiment, the semiconductor process chamber further includes a controller. The controller includes at least one memory and at least one processor. A computer program is stored in the memory, and when the computer program is executed by the processor, it realizes the steps of the semiconductor process method. The semiconductor process method includes:

[0113] When performing the first process step, control the switching valve plate 220 to move to the first position so that the first gas enters the chamber body 100 through the first gas inlet 211; when performing the second process step, control the switching valve plate 220 to move to the second position so that the second gas enters the chamber body 100 through the second gas inlet 212.

[0114] Exemplarily, the controller can be a host computer or a slave computer. Among them, the controller can directly control the switching valve plate 220 or control the driving member that drives the switching valve plate 220 to move, so that the switching valve plate 220 moves to the first position or the second position, thereby introducing the corresponding process gas into the interior of the chamber body 100.

[0115] Adopting this embodiment, using the controller to realize the automatic switching process of the movement position of the switching valve plate 220 is beneficial to quickly switch the movement position of the switching valve plate 220, and further quickly switch the first process step and the second process step, which is beneficial to further shorten the switching time of the first gas and the second gas, effectively avoid the problem of air intake delay in the chamber body 100, and the pressure control process of the chamber body 100 in the first process step and the second process step will be faster and more accurate, improving the process effect.

[0116] In a further embodiment, the first process step is an etching step, the first gas is an etching gas, the second process step is a deposition step, and the second gas is a deposition gas. The semiconductor process method further includes: alternately performing the first process step and the second process step, that is, alternately performing the etching step and the deposition step.

[0117] Adopting this embodiment, the controller continuously switches the switching valve plate 220 between the first position and the second position to realize the rapid switching of the etching step and the deposition step, and effectively avoids the problem of air intake delay in each process step during the process of alternately performing the etching step and the deposition step, effectively shortens the duration of the entire process, and the process of the chamber body 100 in each process step is faster and more accurate, which is beneficial to further improving the process effect.

[0118] In the related art, since the first gas or the second gas is introduced into the chamber body 100 through a pipeline, there is a delay in the time for the first gas and the second gas to enter the chamber body 100, and the pressure detection element also needs to delay detecting the pressure value of the chamber body 100. Furthermore, the pressure control valve 400 also needs to delay its action. Since there are delays in both the air intake and the pressure control processes, it is also necessary to delay the loading of the radio frequency, resulting in an extension of the time for each cycle of the entire Bosch process, and it is not easy to control the air pressure difference in the chamber body 100 during the etching process and the deposition process due to the delay problem.

[0119] In the embodiments of the present application, the semiconductor process method includes a first process step and a second process step that are alternately performed. Specifically, the second process step includes controlling the switching valve plate 220 to move to the second position, and the second gas inlet 212 is connected to the chamber body 100 through a gas path, so that the second gas enters the chamber body 100 through the second gas inlet 212; the first process step includes controlling the switching valve plate 220 to move to the first position, and the first gas inlet 211 is connected to the chamber body 100 through a gas path, so that the first gas enters the chamber body 100 through the first gas inlet 211.

[0120] Optionally, the first process step is an etching step, and the second process step is a deposition step. The semiconductor process method is the Bosch process, which includes a plurality of cycle processes, and each cycle process respectively includes the above deposition step and etching step. Optionally, the etching step includes a first etching step and a second etching step, as shown in Figure 9 shown.

[0121] The deposition step includes: controlling the switching valve plate 220 to move to the second position, and the deposition gas quickly enters the chamber body 100. At the same time, the pressure detection element detects the air pressure value in the chamber body 100, and the pressure control valve 400 adjusts the opening according to the detected air pressure value to keep the chamber body 100 at the second air pressure value, and then turns on the radio frequency and maintains for a time t = 0.2 s. In this step, deposition gases such as Ar and C4F8 are usually used to form a fluorocarbon polymer layer on the sidewalls of the holes in the wafer 111. In order to basically not form a fluorocarbon polymer layer at the bottom of the holes, a relatively low radio frequency is generally used in this step.

[0122] The first etching step includes: controlling the switching valve plate 220 to move to the first position, and the etching gas quickly enters the chamber body 100. At the same time, the pressure detection element detects the air pressure value in the chamber body 100, and the pressure control valve 400 adjusts the opening according to the detected air pressure value to keep the chamber body 100 at the first air pressure value, and then turns on the radio frequency and low frequency in sequence and maintains for a time t = 0.2 s. Among them, the difference between the first air pressure value and the second air pressure value is within a preset pressure difference range.

[0123] The second etching step includes: continuing to turn on the radio frequency and low frequency in sequence and maintaining for a time t = 0.2 s. The etching step is usually performed by plasma etching with gases such as Ar, O2, and SF6.

[0124] The number of cycles of the Bosch process can be set as needed. When the cycle process of the set number of cycles is completed, it indicates that a process is completed. That is to say, the etching step and the deposition step are alternately performed. When the etching step ends, the etching gas needs to be discharged outside the chamber body 100 and the deposition gas is injected at the same time. Similarly, when the deposition step ends, the deposition gas needs to be discharged outside the chamber body 100 and the etching gas is injected at the same time, and the cycle continues.

[0125] Figure 10 The timing diagram of four cycle processes is shown. Among them, the second gas flow controller 610 controls the flow rate of the second gas to be 250 sccm, the first gas flow controller 510 controls the flow rate of the first gas to be 85 sccm, the radio frequency voltage of the upper radio frequency in the deposition step is 2200 dBW, the radio frequency voltage of the upper radio frequency in the etching step is 2794 dBW - 2800 dBW, the radio frequency voltage of the low frequency in the first etching step is 330 dBW - 336 dBW, the air pressure in the chamber body 100 during the deposition process is 75 mTorr, the air pressure in the chamber body 100 during the etching process is 55 mTorr. During the process, the air pressure in the chamber body 100 presents a square wave waveform in a trapezoidal shape.

[0126] With the above process flow, since the movement of the switching valve plate 220 is directly used to control the entry of the first gas or the second gas into the chamber body 100, it effectively avoids the residual gas from the previous process entering the chamber body and participating in the next process, and avoids the mixing of the two process gases to participate in the process. Moreover, there is basically no delay in the entry of the first gas and the second gas into the chamber body 100. Then, the pressure detection element does not need to delay the detection of the air pressure value, and at the same time, there is no need to delay the loading of the radio frequency, which effectively shortens the duration of the entire semiconductor process method and makes it easier to control the air pressure difference in the chamber body 100 in the first process step and the second process step. Moreover, it simplifies the control process of the semiconductor process method, reduces the recipe parameters of the semiconductor process method, and effectively reduces the development difficulty of the semiconductor process method.

[0127] In some other alternative embodiments of the present application, please refer to Figure 12 and Figure 13 As shown, the intake assembly includes a first intake unit and a second intake unit, and the first intake unit and the second intake unit are alternately communicated with the outlet end of the intake assembly 200.

[0128] The first air intake unit includes a first air inlet pipe 281, a first air extraction pipe 283, and a first switching valve plate 223. The air inlet end of the first air inlet pipe 281 is a first gas inlet 211. The first air inlet pipe 281 can admit a first gas. The air inlet of the first air extraction pipe 283 and the air outlet of the first air inlet pipe 281 are arranged side by side. The first switching valve plate 223 is rotatably arranged at the air inlet of the first air extraction pipe 283 and the air outlet of the first air inlet pipe 281. When the first switching valve plate 223 rotates to different positions, it can open the air inlet of the first air extraction pipe 283 and the air outlet of the first air inlet pipe 281. Thus, by changing the rotation position of the first switching valve plate 223, the air outlet of the first air inlet pipe 281 and the air inlet of the first air extraction pipe 283 can be directly controlled, without the need to control the first air inlet pipe 281 and the first air extraction pipe 283 separately.

[0129] The second air intake unit includes a second air inlet pipe 282, a second air extraction pipe 284, and a second switching valve plate 224. The air inlet end of the second air inlet pipe 282 is a second gas inlet 212. The second air inlet pipe 282 can admit a second gas. The air inlet of the second air extraction pipe 284 and the air outlet of the second air inlet pipe 282 are arranged side by side. The second switching valve plate 224 is rotatably arranged at the air inlet of the second air extraction pipe 284 and the air outlet of the second air inlet pipe 282. When the second switching valve plate 224 rotates to different positions, it can open the air inlet of the second air extraction pipe 284 and the air outlet of the second air inlet pipe 282. Thus, by changing the rotation position of the second switching valve plate 224, the air outlet of the second air inlet pipe 282 and the air inlet of the second air extraction pipe 284 can be directly controlled, without the need to control the second air inlet pipe 282 and the second air extraction pipe 284 separately.

[0130] Optionally, the first switching valve plate 223 and the second switching valve plate 224 can be respectively connected to a driving source that provides rotational power, such as a motor or a pneumatic motor, to drive the first switching valve plate 223 or the second switching valve plate 224 to rotate by using the driving source. Further optionally, the linear driving member for driving the switching valve plate 220 to move described above or the driving source here can be controlled by a controller. The controller controls the states of the two linear driving members or the two driving sources, so that the first air intake unit and the second air intake unit intake air alternately.

[0131] In this embodiment, the first intake unit and the second intake unit are alternately communicated with the outlet end of the intake assembly 200. When the first intake unit is communicated with the outlet end of the intake assembly 200, the second switching valve plate 224 can be rotated to the position of opening the second suction pipe 284, and the second suction pipe 284 sucks air from the second intake pipe 282, that is, the process gas in the second intake pipe 282 is sucked away, so as to prevent the residual process gas from entering the chamber body 100 and mixing with the process gas in the next process to participate in the next process; similarly, when the second intake unit is communicated with the outlet end of the intake assembly 200, the first switching valve plate 223 can be rotated to the position of opening the first suction pipe 283, and the first suction pipe 283 sucks air from the first intake pipe 281, that is, the process gas in the first intake pipe 281 is sucked away, so as to prevent the process gas remaining from the previous process from entering the chamber body 100 and mixing with the process gas in the next process to participate in the next process, which is beneficial to improving the process effect.

[0132] Optionally, the first intake pipe 281 can introduce etching gas, and the second intake pipe 282 can introduce deposition gas. The two process procedures are an etching process and a deposition process respectively. In the Bosch etching process engineering, the switching between the etching process and the deposition process can effectively prevent the side wall of the deep hole obtained by etching from generating an uneven scallop structure, make the side wall of the deep hole smoother, avoid affecting the subsequent process, and is beneficial to improving the process effect, and further beneficial to improving the yield of the device. Of course, the first gas inlet 211 and the second gas inlet 212 can also introduce other different types of process gases respectively.

[0133] In an alternative embodiment, when the first intake unit is communicated with the outlet end of the intake assembly 200, the first switching valve plate 223 is in the position of blocking the air inlet of the first suction pipe 283, that is, the first suction pipe 283 cannot suck air. By adopting this embodiment, by blocking the first suction pipe 283, it is possible to prevent the first suction pipe 283 from sucking the gas in the chamber body 100 and avoid affecting the process.

[0134] Optionally, when the first intake unit is communicated with the outlet end of the intake assembly 200, the first switching valve plate 223 is in the position of opening the first intake pipe 281, and the first intake pipe 281 intakes air. In this way, since the first suction pipe 283 is blocked, it also prevents the first suction pipe 283 from sucking the gas in the first intake pipe 281, ensuring that the first process gas entering the first intake pipe 281 smoothly enters the chamber body 100.

[0135] Of course, in other embodiments, the outlet of the first suction pipe 283 is connected to a first suction pump. When the first intake unit is communicated with the outlet end of the intake assembly 200, the first switching valve plate 223 is in the position of opening the air inlet of the first suction pipe 283, and the first suction pump is in an unoperated state.

[0136] In a further embodiment, when the first intake unit is in communication with the outlet end of the intake assembly 200, it indicates that the first intake unit supplies process gas into the chamber body 100, and the second switching valve plate 224 is in a rotating state. Optionally, the rotation plane of the second switching valve plate 224 is parallel to the plane where the outlet of the second intake pipe 282 is located, and is also parallel to the plane where the inlet of the second extraction pipe 284 is located.

[0137] Specifically, during the rotation of the second switching valve plate 224, both the outlet of the second intake pipe 282 and the inlet of the second extraction pipe 284 have three states: fully open, partially open, and fully blocked. When the outlet of the second intake pipe 282 is fully open, the inlet of the second extraction pipe 284 is fully blocked; when the outlet of the second intake pipe 282 is partially open, the inlet of the second extraction pipe 284 is also partially open, that is, partially blocked; when the outlet of the second intake pipe 282 is fully blocked, the inlet of the second extraction pipe 284 is fully open.

[0138] With this embodiment, when the first intake unit intakes gas, by using the rotating second switching valve plate 224, it is possible to gradually open the second intake pipe 282 while gradually closing the second extraction pipe 284, and to gradually close the second intake pipe 282 while gradually opening the second extraction pipe 284, so that the second extraction pipe 284 sucks the residual gas in the second intake pipe 282, avoiding the influence of the residual gas in the second intake pipe 282 on the process. At the same time, since the second switching valve plate 224 is in a rotating state, it avoids the pipe of the second intake unit from being in a blocked state, so it is possible to avoid hardware damage caused by a long blocked state time in the case of a long single-step process time.

[0139] Optionally, both the inlet of the first extraction pipe 283 and the outlet of the first intake pipe 281 are in a semi-circular structure, and the two are combined into a circular structure. The first switching valve plate 223 is in a semi-circular structure, and the first switching valve plate 223 rotates around the axis of the circular structure, and the inlet of the first extraction pipe 283 and the outlet of the first intake pipe 281 are arranged in alignment. In this way, with this structure, during the rotation of the first switching valve plate 223, it can completely coincide with the inlet of the first extraction pipe 283, thereby completely blocking the inlet of the first extraction pipe 283, or the first switching valve plate 223 completely coincides with the outlet of the first intake pipe 281, thereby completely blocking the outlet of the first intake pipe 281, which is beneficial to simplifying the structure of the intake assembly 200.

[0140] Of course, the inlet of the first extraction pipe 283, the outlet of the first intake pipe 281, and the first switching valve plate 223 can also adopt other structures such as a square structure.

[0141] In a further embodiment, referring to Figure 12 As shown, the first intake unit further includes a third control valve 291 and a first pipe segment 285b. The first pipe segment 285b is opposite to the intake port of the first extraction pipe 283 and the outlet port of the first intake pipe 281. The third control valve 291 is disposed on the first pipe segment 285b, and the third control valve 291 controls the on / off of the first pipe segment 285b. In the intake direction of the first intake pipe 281, the third control valve 291 is located downstream of the first switching valve plate 223. When the first intake unit is in communication with the outlet end of the intake assembly 200, the third control valve 291 is in an open state to ensure that the first process gas can smoothly enter the chamber body 100; when the second intake unit is in communication with the outlet end of the intake assembly 200, the third control valve 291 is in a closed state to prevent the second process gas from mixing with the first process gas and entering the chamber body 100, thereby affecting the process.

[0142] In an alternative embodiment, when the second intake unit is in communication with the outlet end of the intake assembly 200, the second switching valve plate 224 is in a position blocking the intake port of the second extraction pipe 284, that is, the second extraction pipe 284 cannot extract gas. By adopting this embodiment, by blocking the second extraction pipe 284, it is possible to prevent the second extraction pipe 284 from extracting the gas in the chamber body 100 and avoid affecting the process.

[0143] Optionally, when the second intake unit is in communication with the outlet end of the intake assembly 200, the second switching valve plate 224 is in a position opening the second intake pipe 282, and the second intake pipe 282 intakes gas. In this way, since the second extraction pipe 284 is blocked, it also prevents the second extraction pipe 284 from extracting the gas in the second intake pipe 282, ensuring that the second process gas entering through the second intake pipe 282 smoothly enters the chamber body 100.

[0144] Of course, in other embodiments, the outlet of the second extraction pipe 284 is connected to a second extraction pump. When the second intake unit is in communication with the outlet end of the intake assembly 200, the second switching valve plate 224 is in a position opening the intake port of the second extraction pipe 284, and the second extraction pump is in an unoperated state.

[0145] In a further embodiment, when the second intake unit is in communication with the outlet end of the intake assembly 200, it indicates that the second intake unit supplies process gas to the chamber body 100, and the first switching valve plate 223 is in a rotating state. Optionally, the rotation plane of the first switching valve plate 223 is parallel to the plane where the outlet port of the first intake pipe 281 is located, and is also parallel to the plane where the intake port of the first extraction pipe 283 is located.

[0146] Specifically, referring to Figure 13As shown, during the rotation of the first switching valve plate 223, the air outlet of the first intake pipe 281 and the air inlet of the first extraction pipe 283 both have three states: fully open, partially open, and completely blocked. When the air outlet of the first intake pipe 281 is fully open, the air inlet of the first extraction pipe 283 is completely blocked; when the air outlet of the first intake pipe 281 is partially open, the air inlet of the first extraction pipe 283 is also partially open, that is, partially blocked; when the air outlet of the first intake pipe 281 is completely blocked, the air inlet of the first extraction pipe 283 is fully open.

[0147] With this embodiment, when the second intake unit intakes air, the rotating first switching valve plate 223 is used to gradually open the first intake pipe 281 while gradually closing the first extraction pipe 283, and to gradually close the first intake pipe 281 while gradually opening the first extraction pipe 283, so that the first extraction pipe 283 sucks the residual gas in the first intake pipe 281, avoiding the influence of the residual gas in the first intake pipe 281 on the process. At the same time, since the first switching valve plate 223 is in a rotating state, the pipeline of the first intake unit is prevented from being in a blocked state. Therefore, when the single-step process time is relatively long, the blocked state time is relatively long, which may cause hardware damage can be avoided.

[0148] Optionally, the air inlet of the second extraction pipe 284 and the air outlet of the second intake pipe 282 are both semi-circular structures, and the two are combined to form a circular structure. The second switching valve plate 224 is a semi-circular structure. The second switching valve plate 224 rotates around the axis of the circular structure, and the air inlet of the second extraction pipe 284 and the air outlet of the second intake pipe 282 are arranged in alignment. In this way, with this structure, during the rotation of the second switching valve plate 224, it can completely coincide with the air inlet of the second extraction pipe 284, thereby completely blocking the air inlet of the second extraction pipe 284, or the second switching valve plate 224 completely coincides with the air outlet of the second intake pipe 282, thereby completely blocking the air outlet of the second intake pipe 282, which is beneficial to simplifying the structure of the intake assembly 200.

[0149] Of course, the air inlet of the second extraction pipe 284, the air outlet of the second intake pipe 282, and the second switching valve plate 224 can also adopt other structures such as square structures.

[0150] In a further embodiment, the second intake unit further includes a fourth control valve 292 and a second pipe section 285c. The second pipe section 285c faces the intake port of the second extraction pipe 284 and the outlet end of the second intake pipe 282. The fourth control valve 292 is disposed in the second pipe section 285c, and the fourth control valve 292 controls the on / off of the second pipe section 285c. In the intake direction of the second intake pipe 282, the fourth control valve 292 is located downstream of the second switching valve plate 224. When the second intake unit is in communication with the outlet end of the intake assembly 200, the fourth control valve 292 is in an open state to ensure that the second process gas can smoothly enter the chamber body; when the first intake unit is in communication with the outlet end of the intake assembly 200, the fourth control valve 292 is in a closed state to prevent the first process gas from mixing with the second process gas and entering the chamber body 100, thereby affecting the process.

[0151] Optionally, the intake assembly 200 further includes an outlet pipe 285. The outlet pipe 285 includes a main pipe section 285a, the first pipe section 285b described above, and the second pipe section 285c. The first pipe section 285b and the second pipe section 285c are respectively in communication with the main pipe section 285a. In this way, the first gas flowing through the first intake pipe 281 or the second gas flowing through the second intake pipe 282 flows out through the corresponding pipe sections and the main pipe section 285a.

[0152] In summary, when the first process is started, the third control valve 291 is in an open state, the first switching valve plate 223 conducts the first intake pipe 281, and the first switching valve plate 223 cuts off the first extraction pipe 283. The first gas enters the chamber body to perform, for example, an etching step. At the same time, the fourth control valve 292 is in a closed state, and the second switching valve plate 224 rotates to quickly switch between the intake process and the extraction process to prevent the pipes of the second intake unit from being airtight; when the second process is started, the third control valve 291 is in a closed state, the first switching valve plate 223 rotates to quickly switch between the intake process and the extraction process to prevent the pipes of the first intake unit from being airtight. At the same time, the fourth control valve 292 is in an open state, the second switching valve plate 224 conducts the second intake pipe 282, and the second switching valve plate 224 cuts off the second extraction pipe 284. The second gas enters the chamber body to perform, for example, a deposition step.

[0153] Based on the intake assembly 200 in the above embodiments, an embodiment of the present application further discloses a semiconductor process chamber. Refer to Figure 11As shown in the figure, the semiconductor process chamber includes a chamber body 100 and the intake assembly 200 in the above embodiment. The chamber body 100 is provided with an intake port 101, and the intake assembly 200 is disposed at the intake port 101. That is to say, the main pipeline 285a of the outlet pipe 285 is communicated with the intake port 101 of the chamber body 100. In this way, through the intake assembly 200, the semiconductor process chamber can prevent the process gas remaining from the previous process from entering the chamber body 100 and mixing with the process gas of the next process to participate in the next process, which is beneficial to improving the process effect.

[0154] Based on the intake assembly 200 in the above embodiment, the embodiment of the present application also discloses a semiconductor process method, which includes a first process step and a second process step.

[0155] First process step: Control the first intake unit to be communicated with the outlet end of the intake assembly 200, so that the first switching valve plate 223 is in a position blocking the intake port of the first suction pipe 283, and the second switching valve plate 224 is in a rotating state. Specifically, at this time, the first switching valve plate 223 is also in a position opening the first intake pipe 281, and the first intake pipe 281 introduces the first process gas, and the first process gas can be introduced into the chamber body 100; moreover, through the rotating second switching valve plate 224, the second suction pipe 284 can suck the residual gas of the second intake unit.

[0156] Second process step: Control the second intake unit to be communicated with the outlet end of the intake assembly 200, so that the second switching valve plate 224 is in a position blocking the intake port of the second suction pipe 284, and the first switching valve plate 223 is in a rotating state. Specifically, at this time, the second switching valve plate 224 is also in a position opening the second intake pipe 282, and the second intake pipe 282 introduces the second process gas, and the second process gas can be introduced into the chamber body 100; moreover, through the rotating first switching valve plate 223, the first suction pipe 283 can suck the residual gas of the first intake unit.

[0157] Optionally, the first process gas can be an etching gas, the second process gas can be a deposition gas, the first process step is an etching step, the second process step is a deposition step, and the semiconductor process method is the Bosch process, which includes a plurality of cycle processes, and each cycle process respectively includes the above deposition step and etching step.

[0158] By adopting the above semiconductor process method, gas extraction is carried out by using the suction pipe, which effectively prevents the gas remaining from the previous process from entering the chamber body 100 and participating in the next process, and avoids the mixing of the two process gases to participate in the process, which is beneficial to improving the process effect.

[0159] The embodiments of the present application have been described above in conjunction with the accompanying drawings. However, the present application is not limited to the above specific embodiments. The above specific embodiments are merely illustrative rather than restrictive. Under the inspiration of the present application, those of ordinary skill in the art can also make many forms without departing from the purpose of the present application and the scope protected by the claims, and all of them fall within the protection scope of the present application.

Claims

1. An intake assembly, characterized in that, It includes a connected air intake window (210) and a switching valve plate (220). The switching valve plate (220) is opposite to the air intake window (210). The air intake window (210) is provided with a first gas inlet (211) and a second gas inlet (212). The switching valve plate (220) can move relative to the air intake window (210) between a first position and a second position, and the switching valve plate (220) is provided with an air path that communicates with the outlet end of the air intake assembly (200). When the switching valve plate (220) is in the first position, the first gas inlet (211) communicates with the air path and the second gas inlet (212) is disconnected from the air path; when the switching valve plate (220) is in the second position, the second gas inlet (212) communicates with the air path and the first gas inlet (211) is disconnected from the air path.

2. The intake assembly according to claim 1, wherein The air intake assembly (200) further includes a sealing member. The sealing member is disposed between the air intake window (210) and the switching valve plate (220). The air path includes a first air path section (221) and a second air path section (222). One end of the first air path section (221) and one end of the second air path section (222) are respectively communicated with the outlet end of the air intake assembly (200). When the switching valve plate (220) is in the first position, the first gas inlet (211) communicates with the other end of the first air path section (221), and the sealing member seals the other end of the second air path section (222); when the switching valve plate (220) is in the second position, the second gas inlet (212) communicates with the other end of the second air path section (222), and the sealing member seals the other end of the first air path section (221).

3. The intake assembly according to claim 2, characterized in that, The number of the sealing members is at least two, including a first sealing member (231) and a second sealing member (232). The first sealing member (231) is disposed at the inlet end of the first air path section (221), and the second sealing member (232) is disposed at the inlet end of the second air path section (222). The sealing member is an elastic structure. When the switching valve plate (220) is in the first position, the first sealing member (231) is in an elastically deformed state so that the first gas inlet (211) communicates with the other end of the first air path section (221), and the second sealing member (232) seals the other end of the second air path section (222). When the switching valve plate (220) is in the second position, the second sealing member (232) is in an elastically deformed state so that the second gas inlet (212) communicates with the other end of the second air path section (222), and the first sealing member (231) seals the other end of the first air path section (221).

4. The intake assembly according to claim 3, wherein The intake assembly (200) further includes a first stopper (241) and a first fixing member (251). The first stopper (241) and the first fixing member (251) are respectively located on both sides of the first sealing member (231). The first stopper (241) is connected to the intake window (210), and the first fixing member (251) is connected to the switching valve plate (220). During the process of the switching valve plate (220) switching from the second position to the first position, the first stopper (241) and the first fixing member (251) squeeze the first sealing member (231) to cause elastic deformation of the first sealing member (231). And / or, the intake assembly (200) further includes a second stopper (242) and a second fixing member (252). The second stopper (242) and the second fixing member (252) are respectively located on both sides of the second sealing member (232). The second stopper (242) is connected to the intake window (210), and the second fixing member (252) is connected to the switching valve plate (220). During the process of the switching valve plate (220) switching from the first position to the second position, the second stopper (242) and the second fixing member (252) squeeze the second sealing member (232) to cause elastic deformation of the second sealing member (232).

5. The intake assembly according to claim 1, characterized in that, The first gas inlet (211) and the second gas inlet (212) are provided in pairs, and multiple pairs of the first gas inlets (211) and the second gas inlets (212) are arranged at intervals in the circumferential direction of the intake window (210). A plurality of gas paths are arranged at intervals, and each gas path corresponds to each pair of the first gas inlets (211) and the second gas inlets (212).

6. The intake assembly according to claim 1, wherein, The intake assembly (200) further includes a first sealing member (271). The first sealing member (271) is disposed between the intake window (210) and the switching valve plate (220), and the first sealing member (271) is located between the second gas inlet (212) and the first gas inlet (211) to isolate the second gas inlet (212) and the first gas inlet (211). And / or, the intake assembly (200) further includes a second sealing member (272). The second sealing member (272) is disposed between the intake window (210) and the switching valve plate (220) to seal the gap between the intake window (210) and the switching valve plate (220).

7. The intake assembly according to any one of claims 1 to 6, characterized in that, The intake assembly (200) further includes a flow equalizing plate (260). The flow equalizing plate (260) is located on the side of the switching valve plate (220) facing away from the intake window (210). The flow equalizing plate (260) is provided with a plurality of flow equalizing holes (262), and the gas path is communicated with the outlet end of the intake assembly (200) through each flow equalizing hole (262).

8. The intake assembly according to claim 7, wherein The flow equalizing plate (260) is further provided with a flow equalizing groove (261), and the flow equalizing groove (261) and the switching valve plate (220) form a flow equalizing space, and the flow equalizing groove (261) communicates with a plurality of the flow equalizing holes (262) and the gas path.

9. The intake assembly according to claim 7, wherein The air intake assembly (200) further includes a third seal (273), and the third seal (273) is disposed between the flow equalizing plate (260) and the switching valve plate (220) to seal the gap between the flow equalizing plate (260) and the switching valve plate (220).

10. An intake assembly, characterized in that, It includes a first air intake unit and a second air intake unit. The first air intake unit includes a first intake pipe (281), a first extraction pipe (283) and a first switching valve plate (223). The air inlet of the first extraction pipe (283) and the air outlet of the first intake pipe (281) are arranged side by side, and the first switching valve plate (223) is rotatably disposed at the air inlet of the first extraction pipe (283) and the air outlet of the first intake pipe (281). The second air intake unit includes a second intake pipe (282), a second extraction pipe (284) and a second switching valve plate (224). The air inlet of the second extraction pipe (284) and the air outlet of the second intake pipe (282) are arranged side by side, and the second switching valve plate (224) is rotatably disposed at the air inlet of the second extraction pipe (284) and the air outlet of the second intake pipe (282). The first air intake unit and the second air intake unit are alternately communicated with the air outlet end of the air intake assembly (200).

11. The intake assembly according to claim 10, wherein When the first air intake unit is communicated with the air outlet end of the air intake assembly (200), the first switching valve plate (223) is in a position blocking the air inlet of the first extraction pipe (283). When the second air intake unit is communicated with the air outlet end of the air intake assembly (200), the second switching valve plate (224) is in a position blocking the air inlet of the second extraction pipe (284).

12. The intake assembly according to claim 11, wherein When the first air intake unit is communicated with the air outlet end of the air intake assembly (200), the second switching valve plate (224) is in a rotating state. When the second air intake unit is communicated with the air outlet end of the air intake assembly (200), the first switching valve plate (223) is in a rotating state.

13. The intake assembly according to claim 10, wherein The air inlet of the first extraction pipe (283) and the air outlet of the first intake pipe (281) are both in a semi-circular structure, and the two are combined into a circular structure, and the first switching valve plate (223) is in a semi-circular structure. And / or, the air inlet of the second extraction pipe (284) and the air outlet of the second intake pipe (282) are both in a semi-circular structure, and the two are combined into a circular structure, and the second switching valve plate (224) is in a semi-circular structure.

14. The intake assembly according to claim 10, wherein, The first intake unit further includes a third control valve (291) and a first pipe section (285b). The first pipe section (285b) faces the intake port of the first extraction pipe (283) and the outlet port of the first intake pipe (281). The third control valve (291) is disposed on the first pipe section (285b). When the first intake unit is in communication with the outlet end of the intake assembly (200), the third control valve (291) is in an open state; And / or, the second intake unit further includes a fourth control valve (292) and a second pipe section (285c). The second pipe section (285c) faces the intake port of the second extraction pipe (284) and the outlet port of the second intake pipe (282). The fourth control valve (292) is disposed on the second pipe section (285c). When the second intake unit is in communication with the outlet end of the intake assembly (200), the fourth control valve (292) is in an open state.

15. A semiconductor process chamber, characterized in that, It includes a chamber body (100) and the intake assembly (200) according to any one of claims 1-14. The outlet end of the intake assembly (200) is in communication with the chamber body (100).

16. The semiconductor process chamber according to claim 15, wherein, The chamber body (100) is provided with an exhaust port. The semiconductor process chamber further includes a pressure control valve (400). The pressure control valve (400) is disposed at the exhaust port to adjust the opening degree of the exhaust port.

17. The semiconductor process chamber according to claim 16, wherein, The pressure control valve (400) includes at least two valve plates (410) and a driving member (420). Each of the valve plates (410) is rotatably disposed at the exhaust port to open or close the exhaust port. The driving member (420) is respectively connected to each of the valve plates (410). The driving member (420) can drive each of the valve plates (410) to rotate simultaneously to increase or decrease the opening degree of the exhaust port.

18. A semiconductor process method, applied to the intake component (200) according to any one of claims 1 to 9, characterized in that, The method includes: A first process step of controlling the switching valve plate (220) to move to a first position so that a first gas enters the chamber body (100) through the first gas intake port (211); A second process step of controlling the switching valve plate (220) to move to a second position so that a second gas enters the chamber body (100) through the second gas intake port (212); Alternately performing the first process step and the second process step.

19. A semiconductor process method, applied to the intake component (200) described in any one of claims 10 to 14, characterized in that, The method includes: A first process step of controlling the first intake unit to be in communication with the outlet end of the intake assembly (200), so that the first switching valve plate (223) is in a position blocking the intake port of the first extraction pipe (283), and the second switching valve plate (224) is in a rotating state; A second process step of controlling the second intake unit to be in communication with the outlet end of the intake assembly (200), so that the second switching valve plate (224) is in a position blocking the intake port of the second extraction pipe (284), and the first switching valve plate (223) is in a rotating state.

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