RF front-end modules and RF chips

Abstract

The present invention relates to the field of wireless communication technology. The present invention discloses a radio frequency front-end module, which includes a signal input terminal, an input matching circuit, an amplifier circuit, an output matching circuit and a signal output terminal electrically connected in sequence; the radio frequency front-end module also includes a bias circuit, the first end of the bias circuit is used to connect a power supply, the second end of the bias circuit is used to connect an external logic control circuit, the third end of the bias circuit is used to output a bias current to the input terminal of the amplifier circuit, and the external logic control circuit is used to control the on and off of the amplifier circuit; the bias circuit includes a current mirror circuit, a first transistor, a second transistor, a third transistor, a first resistor, a second resistor and a third resistor. The present invention can improve the IIP3 performance of the entire radio frequency front-end module.

Description

Technical Field

[0001] The present invention relates to the field of wireless communication technology, and in particular to a radio frequency front-end module and a radio frequency chip. Background Art

[0002] Mobile communication terminals have become more and more common in today's society for wireless communication. Their increasingly powerful processing capabilities have made mobile communication terminals gradually evolve into mobile multimedia centers. In the mobile communication system, there are currently two main technical routes, cellular mobile communication and WIFI. These two systems are still evolving, and their common characteristics are larger communication bandwidth and higher transmission rate to meet the growing usage needs of users. In mobile communication terminals, the RF signal is amplified by the power amplifier and transmitted through the antenna.

[0003] With the development of communication technology, in the RF transceiver chip, the RF front end of the mobile terminal is the key device to realize signal transmission and reception. With the multi-mode and multi-standard communication, the RF front end is responsible for the transmission and reception of multi-standard and multi-mode signals. The requirements for the RF amplifier of the RF front end are also increasing, such as higher frequency, larger bandwidth, higher linearity requirements, wider operating voltage range, etc. For example, for the WIFI system, the RF amplifier in the AP / router usually has an operating voltage of about 5V, while the RF amplifier in the station device (such as mobile phones, tablets) often has an operating voltage of about 3.3V.

[0004] However, conventional RF amplifiers can only operate within a narrow voltage range and cannot be used in different devices at the same time; RF amplifier suppliers also often need to develop different products for different operating voltages, which increases product development costs and cycles. Summary of the invention

[0005] The purpose of an embodiment of the present invention is to provide a radio frequency front-end module that outputs high and low levels through a bias circuit; to solve the problems of poor working voltage regulation effect, high cost and small application range of existing radio frequency front-end modules.

[0006] In order to solve the above technical problems, in the first aspect, an embodiment of the present invention provides a radio frequency front-end module, the radio frequency front-end module includes a signal input end, an input matching circuit, an amplifier circuit, an output matching circuit and a signal output end which are electrically connected in sequence; characterized in that the radio frequency front-end module also includes a bias circuit, the first end of the bias circuit is used to connect to a power supply, the second end of the bias circuit is used to connect to an external logic control circuit, the third end of the bias circuit is used to output a bias current to the input end of the amplifier circuit, and the external logic control circuit is used to control the on and off of the amplifier circuit;

[0007] The bias circuit includes a current mirror circuit, a first transistor, a second transistor, a third transistor, a first resistor, a second resistor and a third resistor;

[0008] The base of the first transistor serves as the second end of the bias circuit, the emitter of the first transistor is grounded, and the collector of the first transistor is respectively connected to the first end of the second resistor and the first end of the third resistor; the second end of the second resistor serves as the first end of the bias circuit and is connected to the first end of the first resistor, the second end of the first resistor is connected to the emitter of the second transistor, the second end of the third resistor is connected to the base of the second transistor, the collector of the second transistor is connected to the collector of the third transistor, the collector of the third transistor is also connected to the base of the third transistor, the emitter of the third transistor is connected to the input end of the current mirror circuit, and the output end of the current mirror circuit serves as the third end of the bias circuit.

[0009] Preferably, the RF front-end module also includes a fourth resistor, and the base of the first transistor is connected to the external logic control circuit after being connected in series with the fourth resistor.

[0010] Preferably, the current mirror circuit includes a current mirror unit and a voltage adjustment unit; the first end of the voltage adjustment unit serves as the input end of the current mirror circuit, the second end of the voltage adjustment unit is used to connect to an external linear voltage-regulated power supply, the third end of the voltage adjustment unit is connected to the input end of the current mirror unit, and the output end of the current mirror unit serves as the output end of the current mirror circuit; the voltage adjustment unit is used to adjust the bias voltage output by the third transistor, and the current mirror unit is used to convert the bias voltage into a corresponding bias current for output.

[0011] Preferably, the voltage adjustment unit includes a fourth transistor, a fifth resistor and a sixth resistor;

[0012] The base of the fourth transistor serves as the first end of the voltage adjustment unit, the collector of the fourth transistor serves as the second end of the voltage adjustment unit and is connected to the first end of the fifth resistor, the emitter of the fourth transistor is connected to the first end of the sixth resistor, and the second end of the sixth resistor serves as the third end of the voltage adjustment unit and is connected to the second end of the fifth resistor.

[0013] Preferably, the current mirror unit includes a fifth triode, a sixth triode, a seventh triode and a seventh resistor;

[0014] The collector of the fifth transistor serves as the input end of the current mirror unit, and the collector of the fifth transistor is also connected to the base of the fifth transistor and the base of the seventh transistor respectively, the emitter of the fifth transistor is connected to the collector of the sixth transistor and the base of the sixth transistor, and the emitter of the sixth transistor is grounded; the collector of the seventh transistor is connected to the first end of the seventh resistor, and the second end of the seventh resistor is connected to the first end of the fifth resistor; the emitter of the seventh transistor serves as the output end of the current mirror unit.

[0015] Preferably, the amplifier circuit is an eighth transistor, the base of the eighth transistor serves as the input end of the amplifier circuit, the collector of the eighth transistor serves as the output end of the amplifier circuit, and the emitter of the eighth transistor is grounded.

[0016] Preferably, the RF front-end module also includes a first inductor, the first inductor is connected to the output end of the amplifier circuit, and the second end of the first inductor is used to connect to the power supply.

[0017] Preferably, the RF front-end module also includes a ninth transistor, the collector of the ninth transistor is respectively connected to the collector of the second transistor and the base of the ninth transistor, and the emitter of the ninth transistor is connected to the collector of the third transistor.

[0018] Preferably, the first transistor is an NPN transistor, and the second transistor is a PNP transistor.

[0019] In a second aspect, an embodiment of the present invention provides a radio frequency chip, wherein the radio frequency chip includes the above-mentioned radio frequency front-end module.

[0020] Compared with the prior art, the RF front-end module in the present invention is provided with a bias circuit on the RF front-end module, wherein the first end of the bias circuit is used to connect to a power supply, the second end of the bias circuit is used to connect to an external logic control circuit, the third end of the bias circuit is used to output a bias current to the input end of the amplifier circuit, and the external logic control circuit is used to control the on and off of the amplifier circuit; so that the bias circuit can adaptively operate at different voltages without external interference; thus reducing energy consumption, saving costs, and increasing product service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work, among which:

[0022] Figure 1 The overall circuit diagram of the radio frequency front-end module provided by the embodiment of the present invention;

[0023] Figure 2 A V / I curve diagram when the sixth resistance is 1000 ohms provided in the embodiment of the present invention;

[0024] Figure 3 The V / I curve diagram when the sixth resistance is 600 ohms provided in the embodiment of the present invention.

[0025] In the figure, 100, RF front-end module, 1, signal input terminal, 2, input matching circuit, 3, amplifier circuit, 4, output matching circuit, 5, signal output terminal, 6, bias circuit, 61, current mirror circuit, 611, current mirror unit, 612, voltage adjustment unit. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present invention are described clearly and completely below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] Embodiment 1

[0028] Please see attached Figure 1-Figure 3 As shown, an embodiment of the present invention provides a radio frequency front-end module 100, which includes a signal input terminal 1, an input matching circuit 2, an amplifier circuit 3, an output matching circuit 4 and a signal output terminal 5 which are electrically connected in sequence; the radio frequency front-end module 100 also includes a bias circuit 6, a first end of the bias circuit 6 is used to connect to a power supply, a second end of the bias circuit 6 is used to connect to an external logic control circuit, a third end of the bias circuit 6 is used to output a bias current to the input terminal of the amplifier circuit 3, and the external logic control circuit is used to control the on and off of the amplifier circuit 3.

[0029] When the external logic control circuit outputs a high level, the amplifier circuit 3 is turned on; when the external logic control circuit outputs a low level, the amplifier circuit 3 is turned off. Of course, when the external logic control circuit outputs a high level, the amplifier circuit 3 is turned off; when the external logic control circuit outputs a low level, the amplifier circuit 3 is turned on.

[0030] In this embodiment, the input matching circuit 2 is a first capacitor C1, and the output matching circuit 4 is a second capacitor C2.

[0031] The bias circuit 6 includes a current mirror circuit 61, a first transistor Q1, a second transistor Q2, a third transistor Q3, a first resistor R1, a second resistor R2 and a third resistor R3; the base of the first transistor Q1 serves as the second end of the bias circuit 6, the emitter of the first transistor Q1 is grounded, and the collector of the first transistor Q1 is connected to the first end of the second resistor R2 and the first end of the third resistor R3 respectively; the second end of the second resistor R2 serves as the first end of the bias circuit 6 and is connected to the first end of the first resistor R1, the second end of the first resistor R1 is connected to the emitter of the second transistor Q2, the second end of the third resistor R3 is connected to the base of the second transistor Q2, the collector of the second transistor Q2 is connected to the collector of the third transistor Q3, the collector of the third transistor Q3 is also connected to the base of the third transistor Q3, the emitter of the third transistor Q3 is connected to the input end of the current mirror circuit 61, and the output end of the current mirror circuit 61 serves as the third end of the bias circuit 6.

[0032] In this embodiment, the first transistor Q1 is an NPN transistor, and the second transistor Q2 is a PNP transistor. Specifically, by connecting the first transistor Q1 to the power supply through the second resistor R2, and connecting the second transistor Q2 to the power supply through the first resistor R1, the power supply meets a certain voltage range, such as between 3.5V and 5V. At the same time, the first resistor R1 and the second resistor R2 can provide stable power supplies for the second transistor Q2 and the third transistor Q3, respectively.

[0033] Among them, the collector and base of the third transistor Q3 are connected together to form a diode form, and the number of third transistors Q3 can be increased according to the required voltage range of the power supply, which will not be described here.

[0034] The external logic control circuit outputs a high level, so that the first transistor Q1 is turned on, and the collector of the first transistor Q1 outputs a low level, so that the second transistor Q2 is turned on. The collector of the second transistor Q2 outputs the bias current to the third transistor Q3, and the emitter of the third transistor Q3 outputs the bias current to the current mirror circuit 61, and the current mirror circuit 61 outputs the adjusted bias current to the input end of the amplifier circuit 3, so as to realize the opening or closing function of the amplifier circuit 3. When the external logic control circuit outputs a high level, the amplifier circuit 3 is turned on; when the external logic control circuit outputs a low level, the amplifier circuit 3 is turned off. The bias circuit 6 can adaptively work at different voltages without external interference, reduce energy consumption, and increase product service life.

[0035] In this embodiment, the RF front-end module 100 further includes a fourth resistor R4, and the base of the first transistor Q1 is connected to the external logic control circuit after being connected in series with the fourth resistor R4. The fourth resistor R4 is used to adjust the stability of the control signal output by the external logic control circuit to ensure the working safety of the first transistor Q1.

[0036] In this embodiment, the current mirror circuit 61 includes a current mirror unit 611 and a voltage adjustment unit 612; the first end of the voltage adjustment unit 612 serves as the input end of the current mirror circuit 61, the second end of the voltage adjustment unit 612 is used to connect an external linear regulated power supply (LDO), the third end of the voltage adjustment unit 612 is connected to the input end of the current mirror unit 611, and the output end of the current mirror unit 611 serves as the output end of the current mirror circuit 61. The voltage adjustment unit 612 is used to adjust the bias voltage output by the third triode Q3, and the current mirror unit 611 is used to convert the bias voltage into a corresponding bias current for output. The voltage adjustment unit 612 is used to adjust the current output by the third triode Q3 so that it is in a control range under different voltages, and the voltage range control effect is good. At the same time, the current mirror circuit 61 converts the voltage output by the voltage adjustment unit 612 into a corresponding bias current, thereby effectively controlling the on and off of the amplifier circuit 3.

[0037] In this embodiment, the voltage adjustment unit 612 includes a fourth transistor Q4 , a fifth resistor R5 , and a sixth resistor R6 .

[0038] The base of the fourth transistor Q4 serves as the first end of the voltage adjustment unit 612, the collector of the fourth transistor Q4 serves as the second end of the voltage adjustment unit 612 and is connected to the first end of the fifth resistor R5, the emitter of the fourth transistor Q4 is connected to the first end of the sixth resistor R6, and the second end of the sixth resistor R6 serves as the third end of the voltage adjustment unit 612 and is connected to the second end of the fifth resistor R5.

[0039] In this embodiment, the current mirror unit 611 includes a fifth transistor Q5, a sixth transistor Q6, a seventh transistor Q7 and a seventh resistor R7; the collector of the fifth transistor Q5 serves as the input end of the current mirror unit 611, the collector of the fifth transistor Q5 is also connected to the base of the fifth transistor Q5 and the base of the seventh transistor Q7 respectively, the emitter of the fifth transistor Q5 is connected to the collector of the sixth transistor Q6 and the base of the sixth transistor Q6, and the emitter of the sixth transistor Q6 is grounded; the collector of the seventh transistor Q7 is connected to the first end of the seventh resistor R7, and the second end of the seventh resistor R7 is connected to the first end of the fifth resistor R5; the emitter of the seventh transistor Q7 serves as the output end of the current mirror unit 611.

[0040] In this embodiment, the amplifier circuit 3 is an eighth transistor Q8, the base of the eighth transistor Q8 serves as the input end of the amplifier circuit 3, the collector of the eighth transistor Q8 serves as the output end of the amplifier circuit 3, and the emitter of the eighth transistor Q8 is grounded.

[0041] Optionally, the amplifier circuit 3 is a bipolar transistor or a field effect transistor for amplifying the radio frequency signal. The radio frequency small signal enters the base of the eighth transistor Q8 through the first capacitor C1; the amplified radio frequency signal is output through the second capacitor C2.

[0042] In this embodiment, the RF front-end module 100 further includes a first inductor L1 , the first inductor L1 is connected to the output end of the amplifier circuit 3 , and a second end of the first inductor L1 is used to connect to the power supply.

[0043] In this embodiment, the RF front-end module 100 also includes a ninth transistor Q9, the collector of the ninth transistor Q9 is respectively connected to the collector of the second transistor Q2 and the base of the ninth transistor Q9, and the emitter of the ninth transistor Q9 is connected to the collector of the third transistor Q3.

[0044] During specific implementation, the emitter output current of the third transistor Q3 is used to control the working state of the fourth transistor Q4.

[0045] LDO_Out is controlled by the PAEN signal output by the external logic control circuit. When the PAEN signal is high, LDO_Out outputs a DC voltage, such as 2.8V; otherwise, LDO_Out is 0V.

[0046] When the PAEN signal is at a low level, LDO_2.8V = 0 V. At this time, the collector of the third transistor Q3 does not output a bias current, and the eighth transistor Q8 does not work.

[0047] When the PAEN signal is at a high level and VCC < LowLimitV, for example, when LowLimitV = 3.6V, due to the PN - junction voltage drops of the third transistor Q3, the ninth transistor Q9, the fifth transistor Q5, and the sixth transistor Q6, the base of the fourth transistor Q4 cannot obtain sufficient drive current, resulting in the non - conduction between the collector and emitter of the fourth transistor Q4. Therefore, R` = R5.

[0048] When the PAEN signal is at a high level and VCC > LowLimitV, for example, when LowLimitV = 3.6V, the base current of the fourth transistor Q4 increases, the resistance between the collector and emitter of the fourth transistor Q4 decreases, and R` also decreases accordingly. Under the current mirror action of the fifth transistor Q5, the sixth transistor Q6, and the seventh transistor Q7, the bias current output from the emitter of the seventh transistor Q7 gradually increases, and the operating state of the eighth transistor Q8 also changes synchronously.

[0049] Therefore, when VCC changes from a low voltage to a high voltage, the base - bias current of the eighth transistor Q8 changes as Figure 2 shown.

[0050] To increase the flexibility of circuit design, the control range at different voltages can be adjusted by changing the resistance value of the sixth resistor R6; below, taking the sixth resistor R6 as 1000 ohms and 500 ohms as examples respectively.

[0051] When the sixth resistor R6 = 1000 ohms, Figure 2 in the shown V / I curve, the current values of m1 and m2 are both less than 0.8mA, and the current value is smaller at this time.

[0052] When the sixth resistor R6 = 500 ohms, Figure 3 in the shown V / I curve, the current values of m3 and m4 are both greater than 1.12mA, and the current value is larger at this time.

[0053] Embodiment 2

[0054] The embodiment of the present invention provides a radio - frequency chip, and the radio - frequency chip includes the above - mentioned radio - frequency front - end module 100.

[0055] It should be noted that in this article, the term "including", "comprising" or any other variant thereof is intended to cover non - exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or further includes elements inherent to this process, method, article or device. Without more limitations, an element defined by the statement "including one..." does not exclude the existence of another identical element in the process, method, article or device including this element.

[0056] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A radio frequency front-end module, comprising a signal input terminal, an input matching circuit, an amplifying circuit, an output matching circuit and a signal output terminal electrically connected in sequence; characterized in that: The RF front-end module also includes a bias circuit, a first end of the bias circuit is used to connect to a power supply, a second end of the bias circuit is used to connect to an external logic control circuit, a third end of the bias circuit is used to output a bias current to an input end of the amplifier circuit, and the external logic control circuit is used to control the on and off of the amplifier circuit; The bias circuit includes a current mirror circuit, a first transistor, a second transistor, a third transistor, a first resistor, a second resistor and a third resistor; The base of the first transistor serves as the second end of the bias circuit, the emitter of the first transistor is grounded, and the collector of the first transistor is connected to the first end of the second resistor and the first end of the third resistor respectively; the second end of the second resistor serves as the first end of the bias circuit and is connected to the first end of the first resistor, the second end of the first resistor is connected to the emitter of the second transistor, the second end of the third resistor is connected to the base of the second transistor, the collector of the second transistor is connected to the collector of the third transistor, the collector of the third transistor is also connected to the base of the third transistor, the emitter of the third transistor is connected to the input end of the current mirror circuit, and the output end of the current mirror circuit serves as the third end of the bias circuit; The current mirror circuit comprises a current mirror unit and a voltage adjustment unit; the first end of the voltage adjustment unit serves as the input end of the current mirror circuit, the second end of the voltage adjustment unit is used to connect to an external linear voltage-stabilized power supply, the third end of the voltage adjustment unit is connected to the input end of the current mirror unit, and the output end of the current mirror unit serves as the output end of the current mirror circuit; the voltage adjustment unit is used to adjust the bias voltage output by the third transistor, and the current mirror unit is used to convert the bias voltage into a corresponding bias current for output; The voltage adjustment unit includes a fourth transistor, a fifth resistor and a sixth resistor; The base of the fourth transistor serves as the first end of the voltage adjustment unit, the collector of the fourth transistor serves as the second end of the voltage adjustment unit and is connected to the first end of the fifth resistor, the emitter of the fourth transistor is connected to the first end of the sixth resistor, and the second end of the sixth resistor serves as the third end of the voltage adjustment unit and is connected to the second end of the fifth resistor; The current mirror unit includes a fifth triode, a sixth triode, a seventh triode and a seventh resistor; The collector of the fifth triode serves as the input end of the current mirror unit, the collector of the fifth triode is also connected to the base of the fifth triode and the base of the seventh triode respectively, the emitter of the fifth triode is connected to the collector of the sixth triode and the base of the sixth triode, and the emitter of the sixth triode is grounded; the collector of the seventh triode is connected to the first end of the seventh resistor, and the second end of the seventh resistor is connected to the first end of the fifth resistor; the emitter of the seventh triode serves as the output end of the current mirror unit; The RF front-end module further includes a ninth transistor, the collector of the ninth transistor is respectively connected to the collector of the second transistor and the base of the ninth transistor, and the emitter of the ninth transistor is connected to the collector of the third transistor; The RF front-end module further includes a fourth resistor, and the base of the first transistor is connected to the external logic control circuit after being connected in series with the fourth resistor; the amplifying circuit is an eighth transistor, the base of the eighth transistor serves as the input end of the amplifying circuit, the collector of the eighth transistor serves as the output end of the amplifying circuit, and the emitter of the eighth transistor is grounded; The RF front-end module also includes a first inductor, a first end of which is connected to the output end of the amplifier circuit, and a second end of which is used to connect to the power supply; the first transistor is an NPN transistor, and the second transistor is a PNP transistor.

2. A radio frequency chip, characterized in that: The radio frequency chip includes the radio frequency front-end module as claimed in claim 1.

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