An intake device and a semiconductor processing apparatus including the same

Abstract

The embodiments of the present application relate to the field of semiconductor processing technologies, and particularly to an air intake device and a semiconductor processing apparatus including the same. The air intake device includes a first pipe, a second pipe, and a flow-through structure. The first pipe has a first passage for the flow of a first type of gas; the second pipe enters the first passage along the axial direction of the first pipe and extends coaxially within the first passage. The second pipe has a second passage for the flow of a second type of gas, and the end of the second passage is disposed adjacent to the end of the first passage; the flow-through structure is disposed on the second pipe and within the first passage. The flow-through structure has a plurality of first gas passages that are uniformly arranged around the axial direction of the second pipe and whose orientation forms a first preset angle with the axial direction of the second pipe. The air intake device and the semiconductor processing apparatus including the same provided by the embodiments of the present application can achieve uniform intake of multiple gases without pre-mixing of the multiple gases.

Description

Technical Field

[0001] The embodiments of the present application relate to the technical field of semiconductor processing, and particularly to an air inlet device and a semiconductor processing apparatus including the same. Background Art

[0002] During the processing of semiconductor processing apparatuses such as semiconductor thin film deposition, plasma etching, and plasma ashing, in order to meet the requirements of reaction processes, multiple types of process gases are required. Different types of process gases enter the reaction chamber together to participate in the reaction. Usually, different types of process gases are pre-mixed to form a mixed gas and then introduced into the reaction chamber. That is to say, multiple types of process gases are usually pre-mixed. However, some process gases are prone to reaction condensation after being pre-mixed for a long time, generating particulate matter in the pipeline, which affects the processing technology.

[0003] However, when different types of process gases are introduced into the reaction chamber without pre-mixing, the problem of uneven air intake will occur, which will have a negative impact on the reaction efficiency, product quality, and production efficiency. Therefore, how to achieve uniform air intake of multiple gas paths without pre-mixing of multiple gases is still an important issue. Summary of the Invention

[0004] The purpose of the embodiments of the present application is to provide an air inlet device and a semiconductor processing apparatus including the same, which can achieve uniform air intake of multiple gas paths without pre-mixing of multiple gases.

[0005] To solve the above technical problems, an embodiment of the present application provides an air inlet device for introducing process gases into a reaction chamber. The air inlet device includes a first pipeline, a second pipeline, and a flow-through structure. The first pipeline has a first channel for the first type of gas to flow through; the second pipeline enters the first channel along the axial direction of the first pipeline and extends coaxially within the first channel. The second pipeline has a second channel for the second type of gas to flow through, and the end of the second channel is disposed adjacent to the end of the first channel; the flow-through structure is disposed on the second pipeline and within the first channel. The flow-through structure has a plurality of first gas channels that are uniformly arranged around the axial direction of the second pipeline and whose orientation forms a first preset angle with the axial direction of the second pipeline. One of the ends of the first channel and the second channel is used to communicate with the air inlet of the reaction chamber, and the gas flowing through the other one enters the one communicating with the air inlet of the reaction chamber along a direction forming a first preset angle with the axial direction of the second pipeline through the flow-through structure, so that the gases flowing through the two enter the air inlet of the reaction chamber together. The flow-through structure is disposed adjacent to the air inlet of the reaction chamber on the gas flow path.

[0006] In some embodiments, the first pipeline is provided with a first air inlet, the first air inlet is located at the end of the first channel away from the flow structure, and the first air inlet is used to connect to a first gas source that supplies a first type of gas; and / or the second air inlet is located at the end of the second channel away from the air inlet of the reaction chamber, and the second air inlet is used to connect to a second gas source that supplies a second type of gas.

[0007] In some embodiments, at the end of one of the first channel and the second channel that communicates with the air inlet of the reaction chamber, a spray head is provided. The spray head has a plurality of second gas channels arranged around the axis of the first pipeline and facing a second preset angle with the axis of the first pipeline. The gases flowing in the first channel and the second channel enter the reaction chamber together along a direction forming a second preset angle with the axis of the first pipeline through the second gas channels.

[0008] In some embodiments, the spray head is in a hollow frustum shape, the spray head is coaxial with the first pipeline, the end with a smaller cross-section of the spray head faces the inside of the reaction chamber, and the second gas channels are arranged on the side surface of the spray head.

[0009] In some embodiments, a plurality of third gas channels facing the gas spray head are evenly provided on the end surface of the end with a smaller cross-section of the spray head.

[0010] In some embodiments, in the direction forming a second preset angle with the axis of the second pipeline, the first gas channel and the second gas channel are arranged staggeredly.

[0011] In some embodiments, the angle magnitudes of the first preset angle and the second preset angle are different.

[0012] In some embodiments, a plurality of first gas channels are distributed on a plurality of planes perpendicular to the axis of the first pipeline, and the first gas channels on adjacent two planes are equidistantly arranged in the axial direction of the first pipeline; and / or a plurality of second gas channels are distributed on a plurality of planes perpendicular to the axis of the first pipeline, and the second gas channels on adjacent two planes are equidistantly arranged in the axial direction of the first pipeline.

[0013] In some embodiments, the first channel is arranged to be straight or the first channel is arranged to be bent.

[0014] In some embodiments, the first channel is arranged to be straight, the end of the second channel is located inside the first channel, and the flow structure is arranged at the end of the second channel.

[0015] In some embodiments, the first channel is arranged to be straight, the end of the second channel is located outside the first channel, and the flow structure is arranged at the position of the second channel away from the air inlet of the reaction chamber.

[0016] In some embodiments, a plate-like structure is provided in the first channel, which surrounds the second pipe and is located on the intake path of the first channel. The plate-like structure extends from the outer side of the pipe wall of the second pipe to the inner side of the pipe wall of the first pipe, and there is a gap between the plate-like structure and the inner side of the pipe wall of the first pipe.

[0017] An embodiment of the present application also provides a semiconductor processing apparatus, which includes a reaction chamber having an air inlet, and further includes the above-described air intake device. One end of one of the first channel and the second channel of the air intake device is communicated with the air inlet of the reaction chamber.

[0018] An air intake device provided by an embodiment of the present application uses a nested design of a central pipe and an outer pipe to achieve the intake of two paths of gases. The two pipes are coaxially arranged. The first type of gas flows in the first channel outside the central pipe, and the second type of gas flows in the channel between the intermediate pipe and the outer pipe. The flow structure is arranged on the central pipe. After the two types of gases pass through the flow structure adjacent to the air inlet of the reaction chamber, they jointly enter the air inlet of the reaction chamber in the central pipe or the outer pipe. Specifically, one end of one of the central pipe or the outer pipe is connected to the air inlet of the reaction chamber, and the gas in the other pipe flows into the pipe connected to the air inlet of the reaction chamber through the flow structure. The two types of gases are mixed and enter the air inlet of the reaction chamber at the same time. This device intakes the two types of gases without pre-mixing to avoid generating particulate matter. The two paths of gases enter the reaction chamber from the same air inlet of the reaction chamber, achieving central-symmetric air intake, so that the distribution amounts of the two paths of gases are uniform when entering the reaction chamber. Thus, it is possible to achieve uniform air intake of multiple paths of gases without pre-mixing of multiple gases.

[0019] A semiconductor processing apparatus provided by an embodiment of the present application uses an air intake device with a nested pipeline design, so that multiple paths of gases can enter the reaction chamber in a central-symmetric form, improving the gas distribution uniformity in the semiconductor processing process, thereby improving the quality of the final product. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] One or more embodiments are exemplarily illustrated by the pictures in the corresponding drawings. These exemplary illustrations do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings are represented as similar elements, unless otherwise stated, and the drawings in the drawings do not constitute a scale limitation.

[0021] Figure 1 is a schematic structural diagram of an air intake device provided by some embodiments of the present application;

[0022] Figure 2 is a schematic structural diagram of another air intake device provided by some embodiments of the present application;

[0023] Figure 3It is a schematic structural diagram of another intake device provided by some embodiments of the present application;

[0024] Figure 4 It is a schematic structural diagram of a semiconductor processing device provided by some embodiments of the present application. Detailed implementation manners

[0025] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the following will elaborate on each implementation manner of the present application with reference to the accompanying drawings. However, those of ordinary skill in the art can understand that in each implementation manner of the present application, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following implementation manners, the technical solutions claimed in the present application can still be implemented. The division of the following embodiments is for convenience of description and should not constitute any limitation on the specific implementation manner of the present application. The various embodiments can be combined and cross-referenced with each other on the premise of no contradiction.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above drawings are intended to cover non-exclusive inclusion.

[0027] In the description of the embodiments of the present application, technical terms such as "first" and "second" are only used to distinguish different objects and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity, specific order, or primary-secondary relationship of the indicated technical features. In the description of the embodiments of the present application, "a plurality of" means more than two unless otherwise specifically defined.

[0028] In the description of the embodiments of the present application, the term " / and" is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A / and B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this article generally represents an "or" relationship between the associated objects before and after.

[0029] During the semiconductor device processing, it is usually necessary to make the gas enter the reaction chamber uniformly for chemical reactions. However, in the case of multi-channel intake without premixing, the gas from different pipelines often enters the reaction chamber from different positions, and the multi-channel gas cannot enter from the intake port at the center of the top of the reaction chamber simultaneously. Therefore, it is impossible to ensure the intake uniformity of the multi-channel gas when entering the reaction chamber, resulting in local deviations during the reaction process, causing the performance of some products to be unstable or not meeting the specification requirements, and affecting the uniformity and consistency of the products.

[0030] In existing semiconductor processing equipment, various different process gases are usually pre-mixed and introduced into the reaction chamber through an air inlet at the center of the top of the reaction chamber. A gas mixing device is used in this process to ensure uniform pre-mixing of various gases. The pre-mixed gas flows into the reaction chamber through an air inlet channel located at the center of the top of the reaction chamber, and then reaches the area where the substrate on the stage is located to participate in the reaction. Finally, the reaction products are extracted from the reaction chamber. In this air inlet mode, although the mixed gas can achieve uniform air inlet from the center of the top of the reaction chamber, some process gases react and condense due to being mixed together for a long time during pre-mixing, generating particulate matter in the pipeline, which affects the processing technology.

[0031] Therefore, some embodiments of the present application provide a semiconductor processing equipment. An air inlet device is designed at the air inlet end, and the air inlet device adopts a nested design of a central pipe and an outer pipe. One path of gas enters through the central pipe, and another path of gas enters between the central pipe and the outer pipe. A flow-through structure is provided on the central pipe adjacent to the air inlet of the reaction chamber. Through the flow-through structure, the two paths of gas jointly enter the air inlet of the reaction chamber to achieve central symmetric air inlet, so that the distribution amounts of the two paths of gas are uniform when entering the reaction chamber. Thus, uniform air inlet of multiple paths of gas can be achieved without pre-mixing of various gases.

[0032] The following combines Figures 1 to 3 to illustrate the structure of the air inlet device in the semiconductor processing equipment provided by some embodiments of the present application. The air inlet device is used to introduce process gas into the reaction chamber.

[0033] As Figures 1 to 3 shown, an air inlet device provided by some embodiments of the present application includes a first pipe 10, a second pipe 20, and a flow-through structure 30. The first pipe 10 has a first channel for the first type of gas to flow through; the second pipe 20 enters the first channel along the axis direction of the first pipe 10 and extends coaxially in the first channel. The second pipe 20 has a second channel for the second type of gas to flow through, and the end of the second channel is arranged adjacent to the end of the first channel; the flow-through structure 30 is arranged on the second pipe 20 and located in the first channel. The flow-through structure 30 has a plurality of first gas channels 31 uniformly arranged around the axis of the second pipe 20 and having a first preset angle with the axis of the second pipe 20. One end of one of the first channel and the second channel is used to communicate with the air inlet of the reaction chamber 40 ( Figure 4 shown), and the gas flowing in the other one enters the one communicating with the air inlet of the reaction chamber 40 along a direction forming a first preset angle with the axis of the second pipe 20 through the flow-through structure 30, so that the gases flowing in the two enter the air inlet of the reaction chamber 40 together. The flow-through structure 30 is arranged adjacent to the air inlet of the reaction chamber 40 on the gas flow path.

[0034] The first pipeline 10 and the second pipeline 20 supply different gases when ventilating the reaction chamber 40. The flow-through structure 30 can connect the first channel of the first pipeline 10 and the second channel of the second pipeline 20, enabling the gases flowing in the two pipelines to be introduced into the interior of the reaction chamber 40 from one place. That is to say, when the second channel is connected to the air inlet of the reaction chamber 40, the first type of gas in the first channel can enter the second channel through a plurality of first gas channels 31 and then enter the reaction chamber 40 together. Or, when the first channel is connected to the air inlet of the reaction chamber 40, the second type of gas in the second channel can enter the first channel through a plurality of first gas channels 31 and then enter the reaction chamber 40 together. The first gas channels 31 are evenly distributed. When the gas flows through the plurality of first gas channels 31, it can enter the other channel evenly in multiple airflows. When the multiple airflows enter the other channel in a direction forming a first preset angle with the axial direction of the first pipeline 10, they will collide and mix with the other type of gas.

[0035] By arranging the flow-through structure 30 adjacent to the air inlet of the reaction chamber on the gas flow path, the time and distance for the multi-channel gases to jointly enter the air inlet of the reaction chamber are shortened. As a result, while the first type of gas and the second type of gas are mixed, they enter the reaction chamber 40 evenly from the air inlet of the reaction chamber 40 together.

[0036] After the two-way gases enter the first pipeline 10 and the second pipeline 20 respectively, they flow in their respective pipeline channels. As Figure 1 shown, the gas flowing in the first channel of the first pipeline 10 flows in the direction indicated by the dotted arrow in Figure 1 . The gas flowing in the second channel of the second pipeline 20 flows in the direction indicated by the solid arrow in Figure 1 , and finally enters the first channel of the first pipeline 10 through the flow-through structure 30, and mixes with the first type of gas in the first pipeline 10 at the air inlet end. And they jointly enter from the air inlet of the reaction chamber 40 and reach the area where the substrate 42 of the bearing structure 41 is located, participating in the reaction process.

[0037] Or as Figure 2 shown, the gas flowing in the first channel of the first pipeline 10 flows in the direction indicated by the dotted arrow in Figure 2 . The gas flowing in the second channel of the second pipeline 20 flows in the direction indicated by the solid arrow in Figure 2 . Finally, the gas flowing in the first channel of the first pipeline 10 enters the second channel of the second pipeline 20 through the flow-through structure 30 and mixes with the second type of gas in the second pipeline 20. And they jointly enter from the air inlet of the reaction chamber 40 and reach the area where the substrate 42 of the bearing structure 41 is located, participating in the reaction process. Different from Figure 1 , Figure 2When the intake is in the middle, the mixture area is larger and the mixture path is longer, which can be selected according to the actual situation.

[0038] The intake device provided by some embodiments of the present application adopts a nested design of the first pipe 10 and the second pipe 20 to achieve the intake of two paths of gases, and the two pipes are coaxially arranged. The first type of gas flows in the first channel outside the second pipe 20, and the second type of gas flows in the channel between the second pipe 20 and the first pipe 10. The flow structure 30 is arranged on the second pipe 20, and after the two types of gases pass through the flow structure 30, they jointly enter the intake port of the reaction chamber 40 in the second pipe 20 or the first pipe 10. Specifically, one end of one of the second pipe 20 or the first pipe 10 is connected to the intake port of the reaction chamber 40, and the gas in the other pipe flows into the pipe connected to the intake port of the reaction chamber 40 through the flow structure 30 adjacent to the intake port of the reaction chamber 40, and the two types of gases jointly enter the intake port of the reaction chamber 40. This device performs non-premixed intake of the two types of gases to avoid generating particulate matter. The two paths of gases enter the reaction chamber from the same intake port of the reaction chamber, realizing central symmetric intake, so that the distribution amounts of the two paths of gases are uniform when they enter the reaction chamber. Thus, it can achieve uniform intake of multiple paths of gases without pre-mixing of multiple gases.

[0039] It can be understood that Figure 1 and Figure 2 only the intake of two paths of gases is taken as an example here. When there are more than two paths of gas intakes, more pipes can be nested in the pipe to achieve uniform intake of more different gases.

[0040] In some embodiments, the first pipe 10 may be provided with a first intake port, and the first intake port is located at the end of the first channel far from the flow structure 30, and the first intake port is used to connect to the first gas source Gas 1 that supplies the first type of gas; and / or the second pipe 20 may be provided with a second intake port, and the second intake port is located at the end of the second channel far from the intake port of the reaction chamber 40, and the second intake port is used to connect to the second gas source Gas 2 that supplies the second type of gas.

[0041] The first intake port can be arranged at the end of the first channel far from the flow structure 30 for connecting to the first gas source Gas 1 that supplies the first type of gas. The first intake port can also be arranged on the pipe wall adjacent to the end of the first channel far from the flow structure 30, so that the first type of gas flows from the starting end of the first channel to the end of the first channel. In the situation as Figure 1 shown, the first intake port can also be arranged at a position close to the flow structure 30, which can reduce the flow path length.

[0042] The second air inlet can be provided at the end of the second channel away from the air inlet of the reaction chamber 40 for connecting to a second gas source Gas 2 that supplies a second type of gas. The second air inlet can also be provided on the pipe wall adjacent to the end of the second channel away from the air inlet of the reaction chamber 40, so that the second type of gas flows from the starting end of the second channel to the end of the second channel.

[0043] In some embodiments, a spray head 50 can be provided at the end of one of the first channel and the second channel that communicates with the air inlet of the reaction chamber 40. The spray head 50 has a plurality of second gas channels 51 arranged axially around the first pipe 10 and facing a second preset angle with respect to the axis of the first pipe 10. The gases flowing in the first channel and the second channel enter the reaction chamber 40 together through the second gas channels 51 in a direction forming a second preset angle with respect to the axis of the first pipe 10.

[0044] Specifically, for one of the first channel and the second channel that communicates with the air inlet of the reaction chamber 40, its end can introduce gas into the reaction chamber 40 through the spray head 50. The spray head 50 has a plurality of second gas channels 51, these channels are arranged axially around the first pipe 10, and the opening of each channel faces a direction forming a second preset angle with respect to the axis of the first pipe 10.

[0045] When the gases in the first channel and the second channel enter the air inlet of the reaction chamber 40 together, they will pass through the second gas channels 51. Since the directions of these channels form a second preset angle with respect to the axis of the first pipe 10, the two-way gases can enter the chamber of the reaction chamber 40 along this specific angle, which is beneficial to achieving a more uniform gas distribution in the reaction chamber and improving the reaction efficiency. Finally, the two-way gases are evenly sprayed onto the area where the substrate 42 is located through the gas spray head 43 to complete the required reaction process.

[0046] In actual situations, the spray head 50 can be in the shape of a hollow frustum, the spray head 50 is coaxial with the first pipe 10, the end with a smaller cross-section of the spray head 50 faces the inside of the reaction chamber 40, and the second gas channels 51 are provided on the side surface of the spray head 50.

[0047] The spray head 50 can be provided at the central position on the top of the reaction chamber 40. The end with a larger cross-section of the spray head 50 can be connected to the end of the first pipe 10 or the second pipe 20. That is to say, the spray head 50 can introduce gas from the first pipe 10 or the second pipe 20 through its hollow structure and supply gas to the reaction chamber 40. The spray head 50 helps to control the gas distribution and concentration during the reaction process to meet specific process requirements.

[0048] In addition, the spray head 50 can also be set in a cylindrical shape, a prismatic shape, or other shapes.

[0049] In some embodiments, a plurality of third gas channels facing the gas spray head 43 may be uniformly provided on the end face of the smaller cross-sectional area end of the spray head 50.

[0050] In the case where the bottom area of the spray head 50 is relatively large, gas channels may be provided at the bottom simultaneously for gas circulation. That is, a plurality of third gas channels facing the bearing structure 41 in the reaction chamber 40 may be uniformly provided on the end face of the smaller cross-sectional area end of the spray head 50.

[0051] That is to say, part of the gas reaching the end of the first channel or the second channel may enter the reaction chamber 40 along a preset direction via the third gas channel 33.

[0052] The preset direction may be a direction forming an angle greater than 0° and less than 180° with the axis of the first pipe 10. For example, it may be along the axis direction of the first pipe 10, and the present disclosure does not make specific limitations thereto.

[0053] In some embodiments, in a direction forming a second preset angle with the axis of the second pipe 20, the first gas channel 31 and the second gas channel 51 may be staggeredly arranged.

[0054] The staggered arrangement may form a cross-staggered layout of the first gas channel 31 and the second gas channel 51 in space, such that the axes of the first gas channel 31 and the second gas channel 51 are staggered from each other in some areas rather than on a straight line. This mutually staggered layout can optimize the mixing function of multiple types of gases in the intake device.

[0055] In some embodiments, the magnitudes of the first preset angle and the second preset angle may be different.

[0056] Different spray hole angles may affect the spraying range, speed, and distribution of the gas. That is to say, different angles of the first gas channel 31 in the flow structure 30 and the second gas channel 51 in the spray head 50 can adjust and optimize the gas mixing effect, ensuring uniform gas intake in the reaction chamber 40 and achieving the required reaction conditions.

[0057] In some embodiments, a plurality of first gas channels 31 are distributed on a plurality of planes perpendicular to the axis of the first pipe 10, and the first gas channels 31 on adjacent two planes are equidistantly arranged in the axis direction of the first pipe 10; and / or a plurality of second gas channels 51 are distributed on a plurality of planes perpendicular to the axis of the first pipe 10, and the second gas channels 51 on adjacent two planes are equidistantly arranged in the axis direction of the first pipe 10.

[0058] A plurality of uniformly distributed first gas channels 31 are equidistantly arranged in the axial direction of the second pipe 20, which can equally divide a certain type of gas in the first channel or the second channel into multiple airflows and uniformly enter the other channel to mix with the other type of gas, thereby improving the reaction efficiency and controllability.

[0059] A plurality of uniformly distributed second gas channels 51 are equidistantly arranged in the axial direction of the second pipe 20, which can enable two types of gases to enter the reaction chamber 40 within a wider air intake range and simultaneously enter the reaction chamber 40 in a centrosymmetric manner for reaction.

[0060] It should be noted that the distribution layers of the gas channels in the axial direction of the pipe can be designed according to the required air intake range.

[0061] Meanwhile, the channel orientations of the second gas channels 51 located on different planes can be designed to be different or the same. As Figure 1 shown, the second gas channels 51 can have three layers in the axial direction of the second pipe 20, that is, distributed on three different planes. And the gases flowing out from the second gas channels 51 located on different planes can enter the gas spray head 43 in directions forming different angles with the axial direction of the second pipe 20. Meanwhile, gases also flow out from the bottom of the spray head 50 towards the gas spray head 43. By increasing or decreasing the distribution layers of the gas channels, the distribution and flow of the gases can be optimized, thereby improving the uniformity and efficiency of the intake of multiple types of gases.

[0062] In some embodiments, the first channel can be set to be straight or bent.

[0063] As Figure 1 and Figure 2 shown, the first channel can be designed to extend straight. The gas can flow in a straight path in the pipe and finally enter the interior of the reaction chamber 40 in a direction parallel to the orientation of the air intake at the top of the reaction chamber 40. Setting a straight - extending channel is applicable to introducing gas at the proximal end of the reaction chamber 40, which is beneficial to reducing the flow path of the gas entering the reaction chamber 40.

[0064] Figure 1 shows one of the embodiments, where the first channel is set to be straight, and the end of the second channel is located within the first channel, and the flow - through structure 30 is arranged at the end of the second channel. In this case, the first type of gas enters the first channel from the pipe wall of the first pipe 10 and flows along the Figure 1 dashed - line arrow direction in Figure 1 . The second type of gas enters the second channel from the end of the second pipe 20 far from the air intake of the reaction chamber 40 and flows along the Figure 1 solid - line arrow direction in Figure 1 , and then enters the first channel through the flow - through structure 30 and enters the spray head 50 together with the first type of gas.

[0065] As Figure 2 shows one of the embodiments, the first channel is arranged in a straight shape, and the end of the second channel is located outside the first channel. The flow-through structure 30 is arranged at the air inlet position of the second channel far from the reaction chamber 40. At this time, the second type of gas enters the second channel from the end of the second pipe 20 far from the air inlet of the reaction chamber 40 and flows along the Figure 2 solid arrow direction in the figure. The first type of gas enters the first channel from the pipe wall of the first pipe 10 and flows along the Figure 2 dashed arrow direction in the figure. After the first type of gas enters the second channel through the flow-through structure 30, it enters the spray head 50 together with the second type of gas along the solid arrow direction.

[0066] In actual situations, the first channel can also be arranged in a bent shape. Figure 3 shows the structure of the air inlet device when the first channel is bent. The first type of gas flows through the first section, the second section, and the third section of the first pipe 10 in sequence. The second pipe 20 is also bent, and the second type of gas flows in a bent path in the second pipe 20 and then converges with the first type of gas. By making the first pipe 10 have two bends, the structure of the air inlet device can be made compact, and gas can be introduced at the far end of the reaction chamber 40. The layout of the pipeline system can be simplified, the floor area of the air inlet device can be reduced, and it is convenient for the operator to connect the gas source, so as to better meet the actual process requirements.

[0067] In some embodiments, a plate-like structure 11 surrounding the second pipe 20 and located on the air inlet path of the first channel is provided in the first channel. The plate-like structure 11 extends from the outer side of the pipe wall of the second pipe 20 to the inner side of the pipe wall of the first pipe 10, and there is a gap between the plate-like structure 11 and the inner side of the pipe wall of the first pipe 10.

[0068] As Figure 1 and Figure 2 shown, the plate-like structure 11 can cause the first type of gas to diffuse at the end of the first channel adjacent to the first air inlet. Specifically, after the first type of gas diffuses at the end of the first channel adjacent to the first air inlet, it can continue to enter the first channel through the gap between the plate-like structure 11 and the inner cavity wall of the first pipe 10, which can improve the uniformity of the first type of gas flowing in the first channel.

[0069] In addition, Figure 2 when the first air inlet is arranged at a position close to the flow-through structure 30, the use of the plate-like structure can be abandoned.

[0070] And in the case of Figure 3In the case where the first channel shown is bent, since the length of the pipeline is relatively long, it is not easy for the gas to directly enter the chamber of the reaction chamber 40 without uniform diffusion after multiple gases are introduced. In this way, whether to set the baffle and how to design the shape and layout of the first channel can be flexibly selected according to the actual situation and process requirements.

[0071] Some embodiments of the present application further provide a semiconductor processing device, including a reaction chamber 40 having an air inlet and the above-mentioned air inlet device, and one end of one of the first channel and the second channel of the air inlet device is communicated with the air inlet of the reaction chamber 40.

[0072] The reaction chamber 40 is provided with a carrying structure 41 and a lifting structure 44. The substrate 42 is placed on the carrying structure 41 and the height is adjusted by the lifting structure 44. When different gases enter the air inlet of the reaction chamber 40 through the air inlet device, the multiple gases can reach the inside of the reaction chamber 40 in a centrosymmetric manner and finally reach the area where the substrate 42 is located to participate in the reaction. Among them, Figure 4 As an illustration, it shows the use of Figure 3 The structure of the semiconductor processing device with the air inlet device shown.

[0073] The above-mentioned air inlet device can be applied to semiconductor processing devices for processes such as plasma thin film deposition, plasma etching, and plasma degumming.

[0074] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0075] Those of ordinary skill in the art can understand that the above embodiments are specific embodiments for implementing the present application, and in actual applications, various changes can be made in form and details without departing from the spirit and scope of the present application.

Claims

1. A gas inlet device for introducing a process gas into a reaction chamber, characterized in that: include: A first pipe having a first passage for the flow of a first type of gas; a second pipe, entering the first channel along the axial direction of the first pipe and extending coaxially in the first channel, the second pipe having a second channel for the flow of a second type of gas, the end of the second channel being disposed adjacent to the end of the first channel; a circulation structure, arranged on the second pipeline and located in the first channel, the circulation structure having a plurality of first gas channels uniformly arranged around the axial direction of the second pipeline and oriented to form a first preset angle with the axial direction of the second pipeline, an end of one of the first channel and the second channel being used to communicate with the gas inlet of the reaction chamber, and the gas flowing in the other enters the one connected with the gas inlet of the reaction chamber through the circulation structure in a direction forming the first preset angle with the axial direction of the second pipeline, so that the gases flowing in the two enter the gas inlet of the reaction chamber together, and the circulation structure is arranged adjacent to the gas inlet of the reaction chamber on the gas flow path; A nozzle is provided at the end of one of the first channel and the second channel that is connected to the gas inlet of the reaction chamber. The nozzle has a plurality of second gas channels that are arranged axially around the first pipeline and face the first pipeline to form a second preset angle. The gases flowing in the first channel and the second channel enter the reaction chamber together through the second gas channels along the direction forming the second preset angle with the first pipeline axis.

2. An air intake device according to claim 1, characterized in that: The first pipeline is provided with a first air inlet, the first air inlet is located at the end of the first channel away from the flow structure, and the first air inlet is used to connect to a first gas source that supplies a first type of gas; and / or The second pipeline is provided with a second gas inlet, which is located at the end of the second channel away from the gas inlet of the reaction chamber, and the second gas inlet is used to connect to a second gas source that supplies a second type of gas.

3. An air intake device according to claim 1, characterized in that: The nozzle is in the shape of a hollow truncated cone, is coaxial with the first pipe, an end of the nozzle with a smaller cross section faces the inside of the reaction chamber, and the second gas channel is arranged on the side of the nozzle.

4. An air intake device according to claim 3, characterized in that: The end surface of the nozzle with a smaller cross section is also evenly provided with a plurality of third gas channels facing the gas shower head.

5. An air intake device according to claim 3, characterized in that: In the direction forming the second preset angle with the axial direction of the second pipeline, the first gas channel and the second gas channel are staggered.

6. An air intake device according to claim 3, characterized in that: The first preset angle and the second preset angle are different in size.

7. An air intake device according to claim 3, characterized in that: A plurality of the first gas channels are distributed on a plurality of planes perpendicular to the axis of the first pipeline, and the first gas channels located on two adjacent planes are arranged equidistantly in the axial direction of the first pipeline; and / or The plurality of second gas channels are distributed on a plurality of planes perpendicular to the axis of the first pipeline, and the second gas channels located on two adjacent planes are arranged equidistantly in the axial direction of the first pipeline.

8. An air intake device according to claim 1, characterized in that: The first channel is configured to be straight, or the first channel is configured to be bent.

9. An air intake device according to claim 8, characterized in that: The first channel is arranged in a straight shape, the end of the second channel is located in the first channel, and the flow structure is arranged at the end of the second channel.

10. An air intake device according to claim 8, characterized in that: The first channel is arranged to be straight, the end of the second channel is located outside the first channel, and the flow structure is arranged at a position of the second channel away from the air inlet of the reaction chamber.

11. An air intake device according to claim 1, characterized in that: A plate-like structure is provided in the first channel, surrounding the second pipe and located on the air intake path of the first channel. The plate-like structure extends from the outer side of the pipe wall of the second pipe to the inner side of the pipe wall of the first pipe, and there is a gap between the plate-like structure and the inner side of the pipe wall of the first pipe.

12. A semiconductor processing device comprising a reaction chamber having a gas inlet, characterized in that: It also includes the gas intake device according to any one of claims 1 to 11, wherein an end of one of the first channel and the second channel of the gas intake device is connected to a gas inlet of a reaction chamber.

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