A method for constructing a force and electricity controllable conductive channel

Abstract

The application provides a method for constructing a force-electricity regulation conductive channel, which comprises the following steps: growing a bottom electrode layer of LSMO on an STO substrate by a pulsed laser deposition method, growing an STO film on a layer surface of the bottom electrode layer of the LSMO, and designing the thickness of the LSMO so that the structure of the STO film has an anti-phase boundary defect to form a conductive channel; obtaining an electron energy loss spectrum and a current-voltage characteristic curve of the STO film to verify the regulation of the conductive channel under a force-electric field; and the method solves the technical problems that it is difficult to in-situ observe the APB conductive channel formation process and in-situ regulate the resistance change behavior process in the prior art.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of ferroelectric materials, and particularly relates to a method for constructing a force and electricity controllable conductive channel. BACKGROUND

[0002] With the rise of big data and artificial intelligence, the continuous progress of information technology, and the explosive growth of data volume, there is a continuous demand for storage devices, which also brings new opportunities and challenges to the research and development of materials. RRAMs (Resistive Random Access Memory) are a new type of non-volatile memory technology, which has many advantages such as high-density storage, low power consumption, fast access speed, non-volatility and programmability. However, the resistive switching behavior of RRAMs is difficult to stabilize, which is directly related to the presence of conductive filaments in the material. Therefore, it is an urgent problem to be solved to control the uncontrollable conductive filaments in RRAMs.

[0003] The preformed conductive channel is the key to solving this problem, which can be realized by doping, self-assembly, different phase structures, defects, etc. Compared with doping, self-assembly and phase structure design, the introduction of defects is simpler and can be maintained for a long time in the material, and can better play a role in the device. As a new type of nanostructure, antiphase boundary (APB) has unique advantages in the switching and regulation of resistance state. APB defect is a partial misorientation of unit cell size in adjacent regions of the crystal. The particularity of its structure makes it have good tunability under external signals, which is reflected in the abnormal magnetoresistance behavior of magnetic iron oxide, the antiferromagnetic property of antiferromagnetic body, solar cells and nonlinear optical integration. In the existing research, researchers have found and confirmed the potential conductive properties of APB structure under high-resolution transmission electron microscopy, but have not observed the defects, conductive channels and resistive switching behavior in situ. The correlation between them is not known, and the mechanism of complex ion and electron transport process under electric field is difficult to understand, which hinders the further optimization of device performance. Therefore, it is of great significance to research and design APB structure and find effective methods to regulate nanowires for exploring new materials and developing functional devices. In turn, it is expected to be applied to resistive random access memory to realize low power consumption, scalability, high read-write speed and fatigue resistance of the memory.

[0004] Therefore, the method for in-situ observation of APB defects and conductive channels still needs to be further improved. SUMMARY

[0005] Therefore, the present application provides a method for constructing a force and electricity controllable conductive channel, which solves the technical problem that it is difficult to in-situ observe APB defects, conductive channels and resistive switching behavior in the prior art.

[0006] The technical scheme of the present application is implemented as follows: the present application provides a method for constructing a force-electricity controllable conductive channel, comprising the following steps:

[0007] By means of a pulsed laser deposition method, lanthanum strontium manganite (LSMO) is grown on a strontium titanate (STO) substrate as a bottom electrode layer, and then an STO film is grown on the bottom electrode layer of the LSMO, and the thickness of the LSMO is designed so that the structure of the STO film has an anti-phase boundary defect, thereby forming a conductive channel.

[0008] The electron energy loss spectrum and the current-voltage characteristic curve of the STO film are obtained, and the controllability of the conductive channel under a force-electric field is verified.

[0009] On the basis of the technical scheme, further preferably, the verification of the controllability of the conductive channel under a force-electric field specifically comprises the following steps:

[0010] A focused particle beam system is used to prepare a transmission electron microscope sample of the STO film, the energy is adjusted, the amorphous layer of the transmission electron microscope sample is cleaned twice, the transmission electron microscope sample is subjected to microscopic imaging, the acquisition parameters are set, and image acquisition is performed, the electron energy loss spectrum of the transmission electron microscope sample is recorded by using different energy dispersions.

[0011] The upper surface of the STO film sample is scraped to expose the bottom electrode layer of the LSMO, silver paste is applied to the LSMO as a positive electrode, a conductive atomic force microscope probe support is used to mount a Ti / Ir-coated probe on a silicon cantilever beam, the probe is grounded, and the probe is placed on the top STO film, the current-voltage characteristic curve of the conductive nanocolumn is measured by applying different bias voltages to the sample, and the current-voltage characteristic curve of the conductive nanocolumn under different forces is tested by changing the size of the probe force.

[0012] On the basis of the technical scheme, further preferably, the LSMO is La x Sr y MnO3.

[0013] On the basis of the technical scheme, further preferably, the La x Sr y MnO3 is La 0.67 Sr 0.33 MnO3.

[0014] On the basis of the technical scheme, further preferably, the setting of the acquisition parameters comprises the acquisition of half-angle and convergence half-angle, and energy dispersion.

[0015] Further preferably, based on the technical scheme, the thickness of the LSMO is designed, wherein the thickness of the LSMO is designed as 17 nanometers, so that the structure of the STO thin film has an anti-phase boundary defect.

[0016] Further preferably, based on the technical scheme, the LSMO is grown on the STO substrate as a bottom electrode layer, and the growth condition is 750 DEG C and an oxygen pressure of 80 mTorr.

[0017] Further preferably, based on the technical scheme, the STO thin film is grown on the LSMO bottom electrode layer, and the growth condition is 750 DEG C and an oxygen pressure of 5 mTorr.

[0018] Further preferably, based on the technical scheme, the collection half angle and the convergence half angle are 10 mrad and 25 mrad respectively, and the energy dispersion is 0.25 eV and 1 eV.

[0019] Further preferably, based on the technical scheme, the STO thin film is prepared into a transmission electron microscope sample by using a focused particle beam system, and the particle beam is a Ga ion beam with a voltage of 30 KV.

[0020] Further preferably, based on the technical scheme, the amorphous layer of the transmission electron microscope sample is cleaned twice, and the conditions are that the energy of the first cleaning is 2 KV, and the energy of the second cleaning is 500-800 eV.

[0021] According to the application, the following beneficial effects are achieved relative to the prior art:

[0022] The application provides a method for constructing a high-conductivity channel by designing a heterojunction and prefabricating an APB to solve the problem that the APB structure is difficult to be macroscopically controlled, so that the APB can be macroscopically controlled by force and electricity, and new insights are provided for explaining the formation mechanism of a conductive nanofilament under an external field, and new ideas are provided for controlling two-dimensional defects.

[0023] The conductive channel obtained by the method has low turn-on voltage, high on-off ratio and good cyclic adjustable resistance switching performance, and the application of the material is expanded, and the method has important guiding significance for promoting the application of ferroelectric materials in the electromechanical control of resistive random access memory.

[0024] The APB structure and the effective method for finding and controlling nanofilaments designed in the application have important significance for exploring new materials and developing functional devices, and are expected to be applied to resistive random access memory, so as to realize low power consumption, scalability, high read-write speed and fatigue resistance of the memory. BRIEF DESCRIPTION OF DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings required by the embodiments or the prior art description will be briefly introduced. Obviously, the accompanying drawings in the following description only represent some embodiments of the present application, and all other drawings obtained by those of ordinary skill in the art without creative effort based on these drawings also belong to the protection scope of the present application.

[0026] Figure 1 Flow chart for the construction method of the electrically and mechanically controllable conductive channel in embodiment 1 of the present application;

[0027] Figure 2 Schematic diagram of the pre-conductive channel switch in embodiment 2 of the present application;

[0028] Figure 3 STO / LSMO / STO heterostructure image and conductive pillar atom-resolved electron energy loss spectrum (EELS) under aberration-corrected scanning transmission electron microscopy (AC-STEM) in embodiment 2 of the present application;

[0029] Figure 4 Schematic diagram of conductive atomic force microscopy (C-AFM) characterization of the two kinds of heterojunctions with and without conductive pillars in embodiment 3 of the present application;

[0030] Figure 5 Current-voltage characteristic curve obtained by applying different negative sweep voltages to the conductive pillar and the substrate under C-AFM in embodiment 3 of the present application;

[0031] Figure 6 Force-electricity relationship diagram measured by applying different stresses to the conductive pillar and the substrate under the same bias voltage under C-AFM in embodiment 3 of the present application, and current-voltage characteristic curve of the conductive pillar and the substrate under stable stress. DETAILED DESCRIPTION

[0032] The technical solutions in the embodiments of the present application will be described clearly and completely below in combination with the embodiments of the present application. Obviously, the described embodiments only represent some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort also belong to the protection scope of the present application.

[0033] Embodiment 1

[0034] The present embodiment provides a construction method of an electrically and mechanically controllable conductive channel, as shown in Figure 1 The method comprises the following steps:

[0035] S1, growing STO substrate on the bottom electrode layer of LSMO by pulsed laser deposition method, growing STO film on the layer surface of the bottom electrode layer of LSMO, and designing the thickness of the LSMO to make the STO film exist anti-phase boundary defects to form a conductive channel;

[0036] S2, verifying the controllability of the conductive channel under an electric field.

[0037] Specifically, in the preferred embodiment, the step S2 includes the following processes:

[0038] Using a focused particle beam system to prepare a transmission electron microscope sample of the STO film, adjusting the energy, cleaning the amorphous layer of the transmission electron microscope sample twice, performing microscope imaging on the transmission electron microscope sample, setting the acquisition parameters, and performing image acquisition, recording the electron energy loss spectrum of the transmission electron microscope sample by using different energy dispersions.

[0039] Scraping the upper surface of the STO film sample to expose the LSMO bottom electrode layer, coating silver paste connecting wires on the LSMO as an anode, using a conductive atomic force microscope probe support, mounting a Ti / Ir coated probe on a silicon cantilever beam, grounding the probe, and placing the probe on the top STO film, measuring the current-voltage characteristic curve of the conductive nanocolumn by applying different bias voltages to the sample, and changing the size of the probe force to test the current-voltage characteristic curve of the conductive nanocolumn under different forces.

[0040] Specifically, in the preferred embodiment, the LSMO in the step S1 is La x Sr y MnO3.

[0041] Specifically, in the preferred embodiment, the La x Sr y MnO3 is La 0.67 Sr 0.33 MnO3.

[0042] Specifically, in the preferred embodiment, the setting of the acquisition parameters in the step S2 includes the acquisition half-angle and convergence half-angle, and the energy dispersion.

[0043] Specifically, in the preferred embodiment, the thickness of the LSMO is designed to be 17 nanometers to make the STO film exist anti-phase boundary defects.

[0044] Specifically, in the preferred embodiment, the LSMO is grown as a bottom electrode layer on the STO substrate, and the growth conditions are 750°C and an oxygen pressure of 80 mTorr.

[0045] Specifically, in the preferred embodiment, the STO film is grown on the bottom electrode layer of the LSMO, and the growth conditions are 750℃ and 5mTorr oxygen pressure.

[0046] Specifically, in the preferred embodiment, the collection half-angle and convergence half-angle are 10mrad and 25mrad, respectively, and the energy dispersion is 0.25eV and 1eV.

[0047] Specifically, in the preferred embodiment, the STO film is prepared into a transmission electron microscope sample using a focused particle beam system, and the particle beam is a Ga ion beam at 30KV.

[0048] Specifically, in the preferred embodiment, the amorphous layer of the transmission electron microscope sample is cleaned twice, and the conditions are 2KV and 500-800eV, respectively.

[0049] Specifically, the step S2 further includes the following processes:

[0050] The electrical properties of the two kinds of heterojunctions with and without the conductive channel are compared and explored by using C-AFM, and the controllability of the conductive channel under the electric field is verified. When measuring, the bottom electrode layer of the LSMO is exposed by scraping part of the sample, silver paste is applied on the LSMO to connect the lead as the positive electrode, and the conductive atomic force microscope ORCA TM probe holder, the probe coated with Ti / Ir is mounted on the silicon cantilever beam, the probe is grounded, and the probe is placed on the top STO film. By applying different bias voltages to the sample, the current-voltage characteristic curve of the conductive nanocolumn is measured, and the size of the probe force is changed to test the current-voltage characteristic curve of the conductive nanocolumn under different forces.

[0051] Example 2

[0052] The embodiment provides a method for constructing a force-controllable conductive channel, including the following steps:

[0053] S1, first, a 248nm KrF excimer pulse laser deposition system is used to grow 5.5nm and 17nm thick LSMO bottom electrode layers on a STO(001) substrate at 750℃ and 80mTorr oxygen pressure. Then, a STO film is grown on the surface of the LaSrMnO layer at 750℃ and 5mTorr oxygen pressure.

[0054] See Figure 2 , Figure 2For the schematic diagram of the conductive path switching process obtained in the example, first, a 5.5 nm and 17 nm thick LSMO bottom electrode layer was grown on a STO (001) substrate at 750 ℃, 80 mTorr oxygen pressure environment by a 248 nm KrF excimer pulse laser deposition system. Then, a STO film was grown on the surface of the LaSrMnO3 layer at 750 ℃, 5 mTorr oxygen pressure environment.

[0055] S2, a cross-section transmission electron microscope sample was prepared by a focused ion beam (FIB) system (FEI Helios 600i) with a 30 kV Ga ion beam, and then the amorphous layer was cleaned at 2 kV, and then the amorphous layer was cleaned at 800 eV and 500 eV by a Fischione Nanomill 1040. The sample under aberration-corrected scanning transmission electron microscopy (STEM) was imaged by a 300 kV Titan Themis G2 (FEI) microscope as shown in Figure 3 . The half-angle of collection was set to 10 mrad, the beam convergence half-angle was set to 25 mrad, and the BF-STEM images of the two STO films were collected as shown in Figure 3 . The HAADF-STEM images of the 17 nm LSMO-grown STO film were collected with inner and outer angles of 48 mrad and 200 mrad, and the EELS element mapping and near-edge structure energy loss (ELNES) were recorded with an energy dispersion of 1 eV and 0.25 eV per channel, respectively, and the EDS element map was recorded by a Super-X detection system with a beam current of 240 pA as shown in Figure 3 .

[0056] The STO / LSMO / STO heterostructure images and EELS under AC-STEM in the example are shown in Figure 3 , and Figure 3 (a) shows that the conductive pillars are clearly visible in the cross-sectional bright-field image of the STO film grown on the 17 nm LSMO electrode, and Figure 3 (b) shows that the presence of the conductive pillars cannot be seen in the cross-sectional bright-field image of the STO film grown on the 5.5 nm LSMO electrode, confirming that the reasonable LSMO thickness design successfully preformed the APB structure in STO. At the same time, in combination with Figure 3 (c), it can be seen that the atomic resolution electron energy loss spectrum (EELS) of region 1, compared with the micrograph at the conductive pillar, can determine that the APB nanostructure in the STO film is caused by the translation vector of a / 2

[100] in the lattice, and this structure provides a high-conductive oxygen-deficient channel for the connection of the STO / LSMO interface.

[0057] To verify the advantages of the conductive channel to the material, the electrical properties of the two kinds of heterojunctions with and without conductive channel were compared by using C-AFM, as shown in the following table, and the controllability of the conductive channel under the electric field was verified. Figure 3 During the measurement, part of the sample was scraped to expose the bottom electrode layer of the LSMO, silver paste was coated on the LSMO to connect the lead as the positive electrode, the probe holder of the C-AFM was used, the probe coated with Ti / Ir was mounted on the silicon cantilever, the probe was grounded, and the probe was placed on the top STO film. By applying different bias voltages to the sample, the current-voltage characteristic curve of the conductive nanocolumn was measured, and the size of the probe force was changed to test the current-voltage characteristic curve of the conductive nanocolumn under different forces. TM During the measurement, part of the sample was scraped to expose the bottom electrode layer of the LSMO, silver paste was coated on the LSMO to connect the lead as the positive electrode, the probe holder of the C-AFM was used, the probe coated with Ti / Ir was mounted on the silicon cantilever, the probe was grounded, and the probe was placed on the top STO film. By applying different bias voltages to the sample, the current-voltage characteristic curve of the conductive nanocolumn was measured, and the size of the probe force was changed to test the current-voltage characteristic curve of the conductive nanocolumn under different forces.

[0058] Embodiment 3

[0059] The embodiment provides a method for constructing a force-controllable conductive channel, comprising the following steps:

[0060] S1, by means of pulse laser deposition, the STO substrate is grown on the bottom electrode layer of La 0.67 Sr 0.33 MnO3, and then the STO film is grown on the surface of the bottom electrode layer of La 0.67 Sr 0.33 MnO3, wherein the crystal face orientation of the STO film is 001, the STO film has anti-phase boundary defects, and a conductive channel is formed;

[0061] S2, a focused particle beam system is used to prepare a transmission electron microscope sample for the STO film, the energy is adjusted, the amorphous layer of the transmission electron microscope sample is cleaned twice, microscope imaging is performed on the transmission electron microscope sample, the acquisition parameters are set, and image acquisition is performed, the electron energy loss spectrum of the transmission electron microscope sample is recorded by using different energy dispersions;

[0062] The controllability of the conductive channel under the electric field is verified, and specifically comprises:

[0063] Part of the STO film sample is scraped to expose the bottom electrode layer of the LSMO, silver paste is coated on the LSMO to connect the lead as the positive electrode, the probe holder of the C-AFM is used, the probe coated with Ti / Ir is mounted on the silicon cantilever, the probe is grounded, and the probe is placed on the top STO film. By applying different bias voltages to the sample, the current-voltage characteristic curve of the conductive nanocolumn was measured, and the size of the probe force was changed to test the current-voltage characteristic curve of the conductive nanocolumn under different forces.

[0064] To verify the controllability of the conductive channel under the electric field, the C-AFM characterization diagram obtained by applying different negative sweep voltages to the two kinds of heterojunctions with and without the conductive column is shown in the following table.Figure 4 As shown, Figure 4 As shown in (a), this is a schematic diagram of a 5.5nm LSMO heterojunction. Figure 4 (b) in the diagram is a schematic diagram of a 17nm LSMO heterojunction. Additionally, as shown in Figure (b)... Figure 4 As shown in (c) and (d), the morphology of the two heterojunctions was scanned in a 1000nm × 1000nm region; while Figure 4 In the figure, (e) and (f) represent the current mappings of the thin LSMO and the thick LSMO under bias voltages of 0V, -6V and +6V, respectively. Figure 4 In the figure, (g) and (h) represent the current mappings of thin and thick LSMO materials under bias voltages of 0V, -4V, -6V, -8V, and -10V, respectively. Figure 4 In the figure, (i) and (j) are the local current-voltage characteristic curves of thin and thick LSMO materials measured under different applied voltages. Figure 4 As can be seen, heterojunction materials with conductive channels obviously have a significant current response.

[0065] In step S2, verifying the tunability of the conductive channel under an electric field specifically includes the following process:

[0066] In a selected 350nm×350nm region, a bias voltage (-10V to +10V) was applied to the LSMO to obtain its morphology image and current curve.

[0067] In this embodiment, different negative sweep voltages were applied to the conductive pillar and the substrate under C-AFM to obtain the current-volt-ampere characteristic curves, as shown below. Figure 5 As shown, from Figure 5 As shown in (a), when a negative voltage is applied, no obvious conductive channel is observed at low voltages (-4V and below). As the voltage increases, a conductive channel with a peak current of approximately -4.55nA appears at -6V. With further voltage increases, the channel current continues to increase within -20nA, and the diameter of the conductive channel also increases accordingly. When the voltage is increased to -10V and the bias voltage is reduced, the current in the conductive channel eventually disappears as the voltage decreases. However, when the bias voltage is reduced to -4V, some conductive channels still exist. Comparing the morphology when the voltage is increased to -4V, it is found that the rupture of the conductive channel lags behind the voltage change.

[0068] Subsequently, different negative sweep voltages were applied to the conductive pillar and the substrate to obtain the current-volt-ampere characteristic curves, such as... Figure 5 As shown in (b) (left: conductive pillar, right: substrate), both the conductive pillar and the substrate exhibit multilayer resistive switching characteristics, while the conductive pillar exhibits lower operating voltage and higher switching efficiency. Figure 5(c) of FIG. 6. Subsequently, the electrically conductive pillar and the substrate were subjected to a fatigue resistance test of resistance switching between +5V and -5V, as shown in Figure 5 (d) of FIG. 6. It can be seen from the figure that the switching ratio of the electrically conductive pillar can be kept stable (maintained at 54) in a range of 10 5 cycles.

[0069] Similarly, a 250nm x 250nm region was selected, and different stresses were applied to the sample under four same bias voltages. The force-electricity relationship diagram of the electrically conductive pillar and the substrate under different stresses applied by the C-AFM under the same bias voltage, and the current-voltage characteristic curve of the electrically conductive pillar and the substrate under stable stress are shown in Figure 6

[0070] The measured current mapping is shown in Figure 6 (a) of FIG. 6. It can be seen from the figure that the electrically conductive pillar structure is more and more obvious with the increase of the stress applied by the probe. In order to eliminate the influence of the contact area and compare the advantages of the electrically conductive pillar, the current of the substrate under the same bias voltage of the electrically conductive pillar was measured, as shown in Figure 6 (b) and (c) of FIG. 6, and the I-V curves of the substrate and the electrically conductive pillar under different forces were obtained, as shown in Figure 6 (d) and (e) of FIG. 6. It can be seen from the curves that the electrically conductive pillar shows that the current first increases and then remains unchanged with the increase of the force applied by the probe to the sample, and the substrate shows that the current first increases and then remains unchanged with the increase of the stress. Under the same bias voltage, the current change of the electrically conductive pillar is significant, and under the same stress, the switching ratio of the electrically conductive pillar is superior to that of the substrate. Therefore, the electrically conductive pillar shows stronger mechanical controllability.

[0071] In summary, the present application provides a construction method of a force-electricity controllable electrically conductive channel, and a method for constructing a high-conductivity channel by pre-preparing an APB, so that the APB can be mechanically and electrically macroscopically controlled, and the technical problem that it is difficult to in-situ observe the APB defect, the electrically conductive channel and the resistance change behavior process is solved, so that the APB can be macroscopically controlled by force and electricity, and a new insight is provided for explaining the formation mechanism of the electrically conductive nanofilament under an external field, and a new idea is provided for controlling two-dimensional defects.

[0072] The above merely describes preferred embodiments of the present application and is not intended to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.​

Claims

1. A method of constructing a voltage-gated electrically conductive channel, comprising: The method comprises the following steps: A bottom electrode layer of LSMO is grown on a STO substrate by a pulsed laser deposition method, and a STO film is grown on a layer surface of the bottom electrode layer of LSMO, and the thickness of the LSMO is designed to make the structure of the STO film exist anti-phase boundary defects to form a conductive channel; An electron energy loss spectrum and a current-voltage characteristic curve of the STO film are acquired to verify the regulation of the conductive channel under a force electric field; wherein the LSMO is La 0.67 Sr 0.33 MnO3; The thickness of the LSMO is designed to be 17 nm to make the structure of the STO film exist anti-phase boundary defects.

2. The method of constructing a force and electricity regulated conductive channel according to claim 1, wherein, The regulation of the conductive channel under a force electric field is verified, and the method comprises the following steps: A focused particle beam system is used to prepare a transmission electron microscope sample of the STO film, the energy is adjusted, the amorphous layer of the transmission electron microscope sample is cleaned twice, microscope imaging is performed on the transmission electron microscope sample, the acquisition parameters are set, and image acquisition is performed, the electron energy loss spectrum of the transmission electron microscope sample is recorded by using different energy dispersions. The upper surface of the STO film sample is scraped to expose the bottom electrode layer of LSMO, silver paste connecting wires are coated on the LSMO as an anode, a conductive atomic force microscope probe support is used to install a Ti / Ir-coated probe on a silicon cantilever beam, the probe is grounded, and the probe is placed on the STO film on the top, the current-voltage characteristic curve of the conductive nanocolumn is measured by applying different bias voltages to the sample, and the size of the probe force is changed to test the current-voltage characteristic curve of the conductive nanocolumn under different forces.

3. The method of constructing a force and electricity regulated conductive channel according to claim 2, wherein, The setting of the acquisition parameters comprises setting the acquisition half-angle and the convergence half-angle and the energy dispersion.

4. The method of constructing a force and electricity regulated conductive channel according to claim 1, wherein, The bottom electrode layer of LSMO is grown on the STO substrate, the growth condition is 750 DEG C, and the oxygen pressure is 80 mTorr, and then the STO film is grown on the bottom electrode layer of LSMO, the growth condition is 750 DEG C, and the oxygen pressure is 5 mTorr.

5. The method of constructing a force and electricity regulated conductive channel according to claim 3, wherein, The acquisition half-angle and the convergence half-angle are 10 mrad and 25 mrad respectively, and the energy dispersion is 0.25 eV and 1 eV.

6. The method of constructing a force and electricity regulated conductive channel according to claim 2, wherein, The focused particle beam system used to prepare the transmission electron microscope sample of the STO film is a Ga ion beam with a particle beam of 30 KV.

7. The method of constructing a force and electricity regulated conductive channel according to claim 2, wherein, The amorphous layer of the transmission electron microscope sample is cleaned twice, and the energy is 2 KV for the first cleaning and 500-800 eV for the second cleaning.

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