A device for etching dislocation defects of a silicon carbide single crystal wafer

Abstract

The application discloses a kind of silicon carbide monocrystal wafer dislocation defect's etching processing device, specifically relates to he silicon carbide processing technical field.The above-mentioned one kind of silicon carbide monocrystal wafer dislocation defect's etching processing device includes liquid tank, partition is fixedly connected in liquid tank, the inner chamber of liquid tank is divided into etching liquid tank and clean water tank by partition, the both ends of liquid tank are fixedly connected with support one, each support one is rotatably connected with flywheel, a pair of flywheel is rotatably connected with chain, and one of support one is provided with motor for driving flywheel rotation, the link plate of chain is rotatably connected with rotating seat, the rotating seat is fixedly connected with fixed block, and the front side of chain is provided with movable linear guide bar that passes through rotating seat;It also includes tensioning assembly, elastic telescopic member, carrier plate and movement guide structure.The silicon carbide wafer etching of the application achieves the effect of safety, sufficient, efficient, high quality and cleaning convenience, meets semi-automatic operation.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of silicon carbide processing, and more particularly to a silicon carbide wafer dislocation defect etching device. BACKGROUND

[0002] Silicon carbide has a wide band gap, high thermal conductivity and high breakdown voltage, so that it is widely used in devices working under high frequency, high power, radiation resistance and extreme conditions. It is a kind of semiconductor material with great potential. In material application, dislocation is one of the important factors affecting the performance of the device, therefore, the characterization of silicon carbide wafer dislocation becomes an important topic. In the process of silicon carbide wafer processing, dislocation defects are prone to occur on the surface of silicon carbide, which are not easy to detect. Since the dislocation will be preferentially etched, the etching method is usually used to judge the dislocation area of silicon carbide wafer. In industrial production, hot lye etching method is often used to etch the surface of Sic, so that the substrate surface shows various dislocations.

[0003] At present, the appearance of silicon carbide wafer dislocation defects is mainly to put the silicon carbide wafer into strong lye for etching. How to realize safe, sufficient, efficient, high-quality and convenient cleaning of silicon carbide wafer etching is a technical problem to be solved at present. In the existing technical means, the etching steps of silicon carbide wafer include immersion, cleaning and drying operation steps, and the manual contact operation is time-consuming and laborious. In the process of process transfer, the operation risk of corrosive liquid is high, so a semi-automatic etching device is needed to meet the efficient, safe and effective appearance of silicon carbide wafer dislocation defects. SUMMARY

[0004] In order to overcome the above-mentioned defects of the prior art, the embodiments of the present application provide a silicon carbide wafer dislocation defect etching device, and the technical problems to be solved by the present application are: how to realize safe, sufficient, efficient, high-quality and convenient cleaning of silicon carbide wafer etching, and meet the semi-automatic operation.

[0005] To achieve the above object, the present application provides the following technical scheme: a silicon carbide wafer dislocation defect etching device, comprising a liquid tank, a partition plate is fixedly connected in the liquid tank, the inner cavity of the liquid tank is divided into an etching liquid tank and a clean water tank by the partition plate, two ends of the liquid tank are fixedly connected with a support one, a flywheel is rotatably connected on each support one, a chain is drivingly connected on the flywheels, a motor for driving the flywheel to rotate is arranged on one of the support ones, a rotating seat is rotatably connected on the chain plate of the chain, a fixed block is fixedly connected on the rotating seat, and a straight guide bar penetrating through the rotating seat is arranged on the front side of the chain.

[0006] A tensioning assembly is arranged on the liquid tank and the chain.

[0007] An elastic expansion piece is arranged on the fixing block;

[0008] A carrier plate is arranged on the elastic expansion piece, a front surface of the carrier plate is rotationally connected with three support rollers forming a V-shaped structure, the silicon carbide single crystal wafer is arranged on the three support rollers, a pair of scraping strips are fixedly arranged on the carrier plate and are in active contact with the surface of the silicon carbide single crystal wafer, a rear surface of the carrier plate is rotationally connected with a sliding seat, and the shaft end of one of the support rollers is fixedly connected with a transmission gear;

[0009] Two groups of movement guide structures are arranged in the etching liquid tank and the clean water tank respectively, each movement guide structure comprises a pair of rails and a rack one and a rack two fixedly connected to the bottom rail, a guide sliding channel is formed between the pair of rails, the sliding seat is slidingly connected in the guide sliding channel, and the rack one and the rack two are used for engaging the transmission gear;

[0010] The rail is composed of a horizontal section one, a lower inclined section, a horizontal section two, an upper inclined section and a horizontal section three from left to right, the rack one is fixedly connected to the bottom of the horizontal section two, the rack two is fixedly connected to the outer inclined surface of the upper inclined section, the two pairs of rails are connected, and the two pairs of rails are fixedly arranged in the etching liquid tank and the clean water tank respectively.

[0011] In a preferred embodiment, the tensioning assembly comprises a bracket two fixedly connected to the liquid tank and a plurality of tensioning gears rotationally connected to the bracket two, and the tensioning gears are engagedly connected to the chain.

[0012] In a preferred embodiment, the straight guide strip is fixedly arranged on the top rail, and the rotating seat is slidingly connected to the straight guide strip.

[0013] In a preferred embodiment, the elastic expansion piece comprises a support plate, a pair of T-shaped sliding rods movably penetrating through the support plate, and a compression spring sleeved on each T-shaped sliding rod, two ends of the compression spring are fixedly connected to the opposite surfaces of the T-shaped sliding rod and the support plate, the fixing block is fixedly connected to the support plate, and the carrier plate is fixedly connected to the pair of T-shaped sliding rods.

[0014] In a preferred embodiment, a mounting block is fixedly connected to the front surface of the carrier plate, and a pair of scraping strips are fixedly connected to the mounting block.

[0015] In a preferred embodiment, the transmission gear is located on the rear surface of the carrier plate, and a rack three for engaging the transmission gear is fixedly connected to the bottom of the horizontal section three arranged at the clean water tank.

[0016] In a preferred embodiment, the air source supply structure comprises a compressed air generating assembly and an air generating driving assembly, the compressed air generating assembly comprises an air tank fixedly connected to the liquid tank and a piston slidingly connected to the air tank.

[0017] In a preferred embodiment, the air generating driving assembly comprises a rotating disc coaxially fixed to one end of the tension gear shaft, a pull rod eccentrically connected to the rotating disc, a compression rod rotatably connected to one end of the pull rod, and a guide block fixedly connected to the liquid tank.

[0018] In a preferred embodiment, one end of the compression rod, which is away from the pull rod, is fixedly connected to the piston, and the compression rod is movably penetrated through the guide block.

[0019] In a preferred embodiment, the air jet assembly comprises an air jet pipe fixedly connected to the bottom of the air tank, a Venturi tube fixedly connected to one end of the air jet pipe, and an air jet frame fixedly connected to one end of the Venturi tube, the air jet frame is fixedly connected to the liquid tank and located below the third rack.

[0020] Technical effects and advantages of the present application:

[0021] The corrosion treatment device for dislocation defects of silicon carbide single crystal wafers provided by the present application provides a rotating movement path for the silicon carbide single crystal wafers through the chain, provides loading support for the silicon carbide single crystal wafers through the three-point supporting support roller, and keeps the support roller in a balanced state at all times under the action of gravity. Thus, the silicon carbide single crystal wafers can be conveniently loaded and unloaded in a concentrated position, the track guides the moving carrier plate, the elastic extension piece controls the vertical movement of the carrier plate, the silicon carbide single crystal wafers are sequentially immersed in the etching liquid tank and the clean water tank, the continuous operation of the etching and cleaning processes of the silicon carbide single crystal wafers is met, the semi-automatic operation effect is achieved, the operation efficiency is improved, the manual participation steps are reduced, and the operation safety is improved.

[0022] The corrosion treatment device for dislocation defects of silicon carbide single crystal wafers provided by the present application uses the rack one and the rack two to provide meshing transmission for the transmission gear, so that the silicon carbide single crystal wafers immersed in the etching liquid tank and the clean water tank can be rotated by the support roller. Thus, the silicon carbide single crystal wafers can be fully contacted with the strong alkali solution for etching and fully cleaned, so that the sufficiency of the etching and cleaning of the silicon carbide single crystal wafers is ensured.

[0023] The application discloses a silicon carbide single wafer dislocation defect etching treatment device.

[0024] The application discloses a silicon carbide single wafer dislocation defect etching treatment device. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 It is a whole first perspective structural schematic view of the application.

[0026] Figure 2 It is a whole second perspective structural schematic view of the application.

[0027] Figure 3 It is a tension assembly structural schematic view of the application.

[0028] Figure 4 It is an elastic telescopic piece and a carrier plate structural schematic view of the application.

[0029] Figure 5 It is a whole structural schematic view of the application Figure 4 Another perspective structural schematic view.

[0030] Figure 6 It is a moving guide structure structural schematic view of the application.

[0031] Figure 7 It is a gas source supply structure and a jet assembly structural schematic view of the application.

[0032] The figure mark is: 1, liquid tank; 2, partition; 3, support one; 4, flywheel; 5, chain; 6, motor; 7, rotating seat; 71, fixed block; 72, straight line guide strip; 8, elastic telescopic piece; 81, support plate; 82, T-shaped slide rod; 83, compression spring; 9, carrier plate; 10, support rotating roller; 11, scraping strip; 12, sliding seat; 13, transmission gear; 14, moving guide structure; 141, track; 142, rack one; 143, rack two; 15, gas source supply structure; 151, gas tank; 152, piston; 153, rotating disc; 154, pull rod; 155, compression rod; 156, guide block; 16, jet assembly; 161, jet pipe; 162, venturi tube; 163, jet frame; 17, tension assembly; 171, support two; 172, tension gear; 18, mounting block; 19, rack three. DETAILED DESCRIPTION

[0033] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative effort belong to the scope of protection of the present application. EMBODIMENT

[0034] With reference to Figures 1-2 The present application provides a kind of etching treatment device for silicon carbide single wafer dislocation defect, including liquid tank 1, fixedly connected with baffle 2 in liquid tank 1, the inner chamber of liquid tank 1 is divided into etching liquid tank and clean water tank by baffle 2, strong alkali solution can be stored in etching liquid tank to etch silicon carbide single wafer surface, clean water tank can store clean water to clean the etching liquid remaining on silicon carbide single wafer, both ends of liquid tank 1 are fixedly connected with support one 3, each support one 3 is rotatably connected with flywheel 4, a pair of flywheel 4 is drivingly connected with chain 5, one of support one 3 is provided with motor 6 for driving flywheel 4 to rotate, the link plate of chain 5 is rotatably connected with rotating seat 7, rotating seat 7 is fixedly connected with fixed block 71, the front side of chain 5 is provided with straight guide bar 72 moving through rotating seat 7, when motor 6 drives flywheel 4 to rotate, chain 5 can move in circulation at this time, so that chain 5 can drive rotating seat 7 and fixed block 71 to move, when rotating seat 7 moves to straight guide bar 72, rotating seat 7 cannot rotate at this time.

[0035] The above-mentioned etching treatment device for silicon carbide single wafer dislocation defect further includes a tensioning assembly 17, an elastic expansion piece 8, a carrier plate 9 and a movement guide structure 14.

[0036] With reference to Figure 3 The tensioning assembly 17 includes a support two 171 fixedly connected to the liquid tank 1 and a plurality of tensioning gears 172 rotatably connected to the support two 171, the tensioning gears 172 are meshingly connected to the chain 5, and the tensioning gears 172 can improve the tensioning degree of the chain 5 transmission to ensure the stability of the chain 5 driving the silicon carbide single wafer to move.

[0037] With reference to Figures 4-5 The elastic expansion piece 8 includes a support plate 81, a pair of T-shaped slide rods 82 movably penetrating through the support plate 81, and a compression spring 83 sleeved on each T-shaped slide rod 82, the two ends of the compression spring 83 are fixedly connected to the opposite surfaces of the T-shaped slide rod 82 and the support plate 81, and the fixed block 71 is fixedly connected to the support plate 81.

[0038] Specifically, when the T-shaped slide rod 82 is subjected to downward pulling force, the T-shaped slide rod 82 can move up and down on the support plate 81, and the compression spring 83 is in a compressed state, and the compression spring 83 can provide tension for the T-shaped slide rod 82 on the support plate 81, so as to control the reset of the lifting movement of the T-shaped slide rod 82.

[0039] The carrier plate 9 is arranged on the elastic telescopic member 8, the front surface of the carrier plate 9 is rotationally connected with three support rollers 10 forming a V-shaped structure, the silicon carbide single crystal wafer is arranged on the three support rollers 10, a pair of scraping strips 11 are fixedly arranged on the carrier plate 9, the scraping strips 11 are in movable contact with the surface of the silicon carbide single crystal wafer, the scraping strips 11 can cooperate with the rotating silicon carbide single crystal wafer to scrape off the liquid on the surface, the rear surface of the carrier plate 9 is rotationally connected with a sliding seat 12, and the shaft end of one of the support rollers 10 is fixedly connected with a transmission gear 13.

[0040] The carrier plate 9 is fixedly connected with a pair of T-shaped slide rods 82, so that the carrier plate 9 can slide on the support plate 81 through the T-shaped slide rods 82 to move downward.

[0041] In combination with the drawings, Figure 6 The number of the movement guide structures 14 is two groups, and the movement guide structures 14 are arranged in the etching liquid tank and the clean water tank respectively, the movement guide structure 14 comprises a pair of rails 141 and a rack one 142 and a rack two 143 fixedly connected on the rails 141 located at the bottom, a sliding channel is formed between the pair of rails 141, the sliding seat 12 is slidingly connected in the sliding channel, the rack one 142 and the rack two 143 are used for meshing with the transmission gear 13, when the transmission gear 13 on the carrier plate 9 passes the positions of the rack one 142 and the rack two 143, the rotation of the support roller 10 can drive the silicon carbide single crystal wafer to rotate, and the arrangement of the multi-section structure of the rails 141 can conveniently drive the silicon carbide single crystal wafer to enter and exit the etching liquid tank and the clean water tank.

[0042] The rails 141 are connected from left to right by a horizontal section one, a lower inclined section, a horizontal section two, an upper inclined section and a horizontal section three, the rack one 142 is fixedly connected at the bottom of the horizontal section two, the rack two 143 is fixedly connected on the outer inclined surface of the upper inclined section, the two pairs of rails 141 are abutted, the abutted arrangement can conveniently enable the sliding seat 12 to continuously pass, and the two pairs of rails 141 are fixedly arranged in the etching liquid tank and the clean water tank respectively.

[0043] The linear guide strip 72 is fixedly arranged on the rails 141 located at the top, and the rotating seat 7 is slidingly connected on the linear guide strip 72, the position of the linear guide strip 72 is stabilized, so that the rotating seat 7 can achieve the effect of linear limiting at the position of the linear guide strip 72.

[0044] The front surface of the carrier plate 9 is fixedly connected with a mounting block 18, and the pair of scraping strips 11 are fixedly connected on the mounting block 18, and the mounting block 18 can be used for stabilizing the arrangement position of the scraping strips 11.

[0045] Specifically, the silicon carbide wafer is fed by being placed on the passing carrier plate 9 at the upper position of the chain 5, and is placed on the three supporting rotating rollers 10. The chain 5 is moved in a rotating manner, so that the chain 5 can drive the silicon carbide wafer on the carrier plate 9 to move to one end position of the track 141, until the sliding seat 12 enters the guide sliding channel, and the linear guide 72 is slidably connected to the rotating seat 7, so that the rotating seat 7 is limited in rotation, and the carrier plate 9 can be stably translated. The curved path provided by the guide sliding channel for the sliding seat 12, so that the carrier plate 9 drives the silicon carbide wafer on it to move downward and immerse in the etching liquid tank. At this time, the T-shaped slide rod 82 slides on the supporting plate 81, and the compression spring 83 is compressed, so that the silicon carbide wafer can be immersed in the etching liquid tank and etched by the strong alkali liquid;

[0046] When the transmission gear 13 engages the rack one 142, the transmission gear 13 can drive one of the supporting rotating rollers 10 to rotate, so that the silicon carbide wafer can rotate in the strong alkali liquid to improve the uniformity of the contact between the surface of the silicon carbide wafer and the strong alkali liquid. Until the sliding seat 12 moves to the upper inclined segment position of the track 141, at this time the silicon carbide wafer can be separated from the strong alkali liquid, and the rack two 143 engages the transmission gear 13 to continue driving the silicon carbide wafer to rotate. By arranging the scraping strip 11, the residual strong alkali liquid on the surface of the silicon carbide wafer can be maximally removed, and the amount of carrying out can be reduced.

[0047] When the carrier plate 9 passes through the horizontal segment one of the clean water tank, the carrier plate 9 can carry the etched silicon carbide wafer to continue entering the clean water tank, so as to complete the cleaning of the residual etching liquid, and the residual water on the surface of the silicon carbide wafer is removed by the scraping strip 11. The principle is the same as entering the etching liquid tank, so it will not be described again.

[0048] The transmission gear 13 is located at the rear surface of the carrier plate 9, and the rack three 19 for engaging the transmission gear 13 is fixedly connected to the bottom of the horizontal segment three of the clean water tank. The rack three 19 can make the silicon carbide wafer continue to rotate in the horizontal segment three of the clean water tank.

[0049] It is worth noting that, since the rotating seat 7 is rotatably connected with the chain 5, when the rotating seat 7 is not in contact with the linear guide 72, the carrier plate 9 can be in a downward state on the chain 5 under the action of gravity. Thus, when the carrier plate 9 moves to the upper position of the chain 5, it is convenient to feed and discharge the silicon carbide wafer on the supporting rotating roller 10 of the carrier plate 9. By centrally arranging the feeding and discharging position of the silicon carbide wafer, the turnover time can be reduced while facilitating taking and placing.

[0050] The present application can meet the effect of semi-automatic operation by completing the feeding and discharging of silicon carbide wafer, the immersion etching of etching liquid, the scraping of etching liquid, the cleaning of etching liquid and the scraping of cleaning water in a flow operation mode, so that the etching of silicon carbide wafer can be safe, sufficient, efficient, high-quality and convenient to clean.

[0051] It is worth mentioning that the rotating seat 7 connected to the chain 5 and the structures connected to the rotating seat 7 in sequence in the present application can constitute an integrated unit, and multiple integrated units can be provided to meet the demand of etching processing of a large number of silicon carbide wafers. Embodiment

[0052] The difference between the present embodiment and embodiment 1 is that Figure 7 The gas supply structure 15 and the air jet assembly 16 are further included.

[0053] The gas supply structure 15 includes a compressed gas assembly and a gas driving assembly, and the compressed gas assembly includes a gas tank 151 fixedly connected to the liquid tank 1 and a piston 152 slidingly connected in the gas tank 151.

[0054] The gas driving assembly includes a rotating disc 153 coaxially fixedly connected to one end of the shaft of the tension gear 172, a pull rod 154 eccentrically connected to the rotating disc 153, a compression rod 155 rotatably connected to one end of the pull rod 154, and a guide block 156 fixedly connected to the liquid tank 1.

[0055] One end of the compression rod 155, which is away from the pull rod 154, is fixedly connected to the piston 152, and the compression rod 155 is movably penetrated through the guide block 156.

[0056] The air jet assembly 16 includes an air jet pipe 161 fixedly communicated with the bottom of the gas tank 151, a Venturi tube 162 fixedly communicated with one end of the air jet pipe 161, and an air jet frame 163 fixedly communicated with one end of the Venturi tube 162, the air jet frame 163 is fixedly connected to the liquid tank 1 and located below the rack three 19, and the Venturi tube 162 is arranged to accelerate the passage of air flow.

[0057] Specifically, during the transmission of the chain 5, the tension gear 172 can adaptively rotate, and the eccentric rotation of the rotating disc 153 driving the pull rod 154 can make the piston 152 reciprocate and compress in the gas tank 151, the compressed air can pass through the Venturi tube 162 to accelerate the passage to the air jet frame 163, when the transmission gear 13 passes through and contacts the rack three 19, the silicon carbide wafer can rotate at this time, so that the air jet frame 163 can shoot compressed air to the silicon carbide wafer passing through the rack three 19 and rotating, so as to further increase the water content on the surface of the silicon carbide wafer, so as to relatively dry the silicon carbide wafer, so as to improve the quality of the etching of the silicon carbide wafer, and the subsequent dislocation display of the etched silicon carbide wafer can be realized.

[0058] Finally, it should be noted that in the description of the present application, it should be noted that unless otherwise specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, which can be mechanical connection or electrical connection, or the communication between two elements, or direct connection, "up", "down", "left", "right" and the like are only used to indicate relative positional relationship, when the absolute position of the described object changes, the relative positional relationship may change;

[0059] Secondly: the present application discloses the structure involved in the embodiment of the present application in the embodiment of the present application, other structures can refer to the usual design, in the case of no conflict, the same embodiment and different embodiments of the present application can be combined with each other;

[0060] Finally: the above only for the preferred embodiment of the present application, and not for limiting the present application, any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An etching treatment apparatus for dislocation defects in a silicon carbide single crystal wafer, characterized in that, The utility model provides a kind of silicon carbide single crystal wafer production device, including liquid tank (1), the inner fixed connection of the liquid tank (1) is connected with baffle (2), the inner cavity of the liquid tank (1) is divided into corrosion liquid tank and clean water tank by baffle (2), the both ends of the liquid tank (1) are fixedly connected with support one (3), every support one (3) is rotatably connected with flywheel (4), a pair of flywheel (4) is rotatably connected with chain (5), one of support one (3) is provided with motor (6) for driving the rotation of flywheel (4), the link plate of chain (5) is rotatably connected with rotating seat (7), the rotating seat (7) is fixedly connected with fixed block (71), the front side of chain (5) is provided with straight guide bar (72) that moves through rotating seat (7); Tensioning assembly (17), the tensioning assembly (17) is arranged on the liquid tank (1) and chain (5); Elastic telescopic member (8), the elastic telescopic member (8) is arranged on the fixed block (71); Carrier plate (9), the carrier plate (9) is arranged on the elastic telescopic member (8), the front surface of the carrier plate (9) is rotatably connected with three support rotating rollers (10) of constituting V-shaped structure, the silicon carbide single crystal wafer is arranged on three support rotating rollers (10), a pair of scraping strips (11) is fixedly arranged on the carrier plate (9), the scraping strip (11) is in movable contact with the surface of silicon carbide single crystal wafer, the rear surface of the carrier plate (9) is rotatably connected with sliding seat (12), and the shaft end of one of support rotating rollers (10) is fixedly connected with transmission gear (13); Movement guide structure (14), the number of the movement guide structure (14) is two groups, and is arranged in corrosion liquid tank and clean water tank respectively, the movement guide structure (14) includes a pair of tracks (141) and rack one (142) and rack two (143) fixedly connected on the track (141) at bottom, guide slide is formed between a pair of tracks (141), the sliding seat (12) is slidably connected in the guide slide, the rack one (142) and the rack two (143) are used for engaging transmission gear (13); The track (141) is connected from left to right by horizontal section one, lower inclined section, horizontal section two, upper inclined section and horizontal section three, the rack one (142) is fixedly connected at the bottom of horizontal section two, the rack two (143) is fixedly connected on the outer inclined surface of upper inclined section, two pairs of tracks (141) are connected, and two pairs of tracks (141) are fixedly arranged in corrosion liquid tank and clean water tank respectively.

2. The apparatus according to claim 1, wherein The tensioning assembly (17) includes support two (171) fixedly connected on the liquid tank (1) and a plurality of tensioning gears (172) rotatably connected on the support two (171), and the tensioning gears (172) are engagedly connected on the chain (5).

3. The apparatus according to claim 1, wherein The straight guide bar (72) is fixedly arranged on the track (141) at top, and the rotating seat (7) is slidably connected on the straight guide bar (72).

4. The apparatus according to claim 1, wherein The elastic telescopic piece (8) comprises a support plate (81), a pair of T-shaped slide rods (82) movably penetrating through the support plate (81), and a compression spring (83) sleeved on each T-shaped slide rod (82), two ends of the compression spring (83) being fixedly connected to opposite surfaces of the T-shaped slide rod (82) and the support plate (81), the fixed block (71) being fixedly connected to the support plate (81), and the carrier plate (9) being fixedly connected to the pair of T-shaped slide rods (82).

5. The apparatus according to claim 1, wherein A mounting block (18) is fixedly connected to the front surface of the carrier plate (9), and a pair of scraping strips (11) are fixedly connected to the mounting block (18).

6. The apparatus according to claim 2, wherein The transmission gear (13) is located at the rear surface of the carrier plate (9), and a rack three (19) for engaging the transmission gear (13) is fixedly connected to the bottom of the horizontal section three arranged at the clean water tank.

7. The apparatus according to claim 6, wherein Further comprising a gas source supply structure (15) and a gas injection assembly (16), the gas source supply structure (15) comprising a compressed gas generating assembly and a gas generating driving assembly, the compressed gas generating assembly comprising a gas tank (151) fixedly connected to the liquid tank (1) and a piston (152) slidingly connected in the gas tank (151).

8. The apparatus according to claim 7, wherein the apparatus is characterized by: The gas generating driving assembly comprises a rotating disc (153) coaxially fixedly connected to the shaft end of one of the tension gears (172), a pull rod (154) eccentrically and rotatably connected to the rotating disc (153), a compression rod (155) rotatably connected to one end of the pull rod (154), and a guide block (156) fixedly connected to the liquid tank (1).

9. The apparatus according to claim 8, wherein One end of the compression rod (155) away from the pull rod (154) is fixedly connected to the piston (152), and the compression rod (155) movably penetrates through the guide block (156).

10. The apparatus according to claim 9, wherein the apparatus is characterized by: The gas injection assembly (16) comprises a gas injection pipe (161) fixedly connected to the bottom of the gas tank (151), a Venturi tube (162) fixedly connected to one end of the gas injection pipe (161), and a gas injection frame (163) fixedly connected to one end of the Venturi tube (162), the gas injection frame (163) being fixedly connected to the liquid tank (1) and located below the rack three (19).

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