High performance multi-component thin film preparation method based on defect-induced regulation and application

Abstract

The application discloses a kind of based on defect induction regulation and control high-performance multicomponent film preparation method and application, preparation method includes the following steps: S1, substrate is placed into aluminum cavity and is extracted vacuum to reach certain cavity gas pressure, and aluminum cavity is heated;S2, first metal precursor is pulsed into cavity, inert gas purging, then second metal precursor is pulsed, inert gas purging, into oxidant and oxidize precursor, inert gas purging;S3, repeat N times above-mentioned step S2, obtain certain thickness of uniform doped film.The method presented in the application reduces the atomic gap filling effect of precursor during the deposition of multicomponent film, which not only reduces the atomic vacancies in the film, realizes the growth mode without growth delay, but also reduces the film surface fluctuation, improves the surface characteristics of the film, and is beneficial to the good interface contact between the prepared film and the remaining functional layer.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic semiconductor devices, in particular to a high-performance multi-component thin film preparation method based on defect-induced regulation and application. BACKGROUND

[0002] In order to improve the integration of semiconductor materials, the size of the device is gradually reduced to the range of several nanometers, and thin film deposition in a high aspect ratio trench structure is essential. Traditional thin film deposition methods, such as PVD and CVD, are difficult to obtain very uniform thin films with precise control of thickness and composition at low processing temperature. In contrast, atomic layer deposition (ALD) is an isotropic thin film deposition method based on surface half-reactions. ALD technology has the advantages of good step coverage, atomic-level thickness control, almost stoichiometric element composition, excellent thickness uniformity and relatively low processing temperature, and is the most suitable thin film deposition method for preparing high-integration devices.

[0003] In recent years, due to its good uniformity, high electron mobility and transparency, and extremely low off-state current, multi-component wide-bandgap amorphous oxide semiconductor materials (AOS), such as InGaZnO, have received extensive attention in many fields such as display and storage. AOS thin film transistor (AOS TFT) devices and CIM (computing-in-memory) architecture can be a possible solution for high-density, high-performance and high-efficiency applications, and are expected to further reduce the feature size in the von Neumann architecture and overcome the "memory wall" limitation. In the deposition of multi-component thin films, the most common method for synthesizing multi-component materials by ALD is to alternate two binary ALD processes in several cycles in a supercycle. The number of supercycles is changed to obtain the desired film thickness. Although the supercycle method has been widely used in the preparation of multi-component thin films, it inevitably has interfacial defects (atomic vacancies, dangling bonds, etc.) and element-rich regions due to the layer-by-layer stacking of components, resulting in a decrease in doping efficiency. When the required doping element content is very low, the number of cycles of the host material and the number of cycles of the doping material differ greatly, resulting in uneven distribution of the doping element in the entire thin film. In addition, the growth mechanism of ALD-prepared multi-component thin films is not simply the sum of each sub-cycle. For example, in an ideal case, the growth rate of a multi-component thin film should be obtained by linear addition of the growth rate of each sub-cycle. However, a large number of studies have shown that the growth rate of a multi-component thin film is much lower than the expected growth rate (GPC), which is called growth delay, which results in the loss of the advantages of ALD in precise control of thin films and deviation of the film composition from the expected value. The mechanism of the growth delay phenomenon is still unclear, and more comprehensive research is needed to propose a more universal solution to achieve ideal ALD growth and atomic-level thickness control of multi-component thin films. SUMMARY

[0004] The application aims to solve the above-mentioned defects in the prior art ALD supercycle method for preparing multi-component thin films, and provides a high-performance multi-component thin film preparation method based on defect-induced regulation and application.

[0005] In the ALD deposition process of thin films, it is generally believed that the growth of thin films is an ideal "layer-by-layer" growth mode, that is, each atomic monolayer of thin film is defect-free. However, in actual situation, due to the steric hindrance effect between precursor molecules, the adsorption of precursors on the substrate surface is not complete, so there are atomic vacancies in each atomic monolayer at the micro level, which reduces the density of the thin film. In addition, when preparing trace-doped thin films by ALD, the deposition times of the main material are much greater than those of the doping material, so even through high-temperature annealing to promote the diffusion of doping elements, it is also difficult to make the doping material uniformly distributed in the entire thin film. In order to solve the problems of atomic vacancies reducing the density of thin films and uneven distribution of doping elements, the application provides a high-performance multi-component thin film preparation method based on defect-induced regulation.

[0006] The application is implemented through the following technical solutions:

[0007] A high-performance multi-component thin film preparation method based on defect-induced regulation, the preparation method comprising the following steps:

[0008] S1, placing a substrate into an aluminum cavity, vacuumizing the cavity to reach a certain cavity gas pressure, and heating the cavity to a certain temperature;

[0009] S2, first introducing a first metal precursor into the cavity, inert gas purging, then introducing a second metal precursor, inert gas purging, introducing an oxidizing agent to oxidize the precursors, and inert gas purging;

[0010] S3, repeating the above step S2 for N times to obtain a uniformly doped thin film with a thickness of [5.5nm, 7.5nm]. The value range of the repetition number N is [25, 100].

[0011] Since the second metal precursor is introduced before the first metal precursor is oxidized in this method, the first metal precursor occupies the surface active sites not occupied by the first metal precursor in advance, so the density of atomic arrangement is significantly improved, and the growth delay phenomenon is also inhibited.

[0012] Further, the substrate in step S1 is an alkali-free glass with a thickness of about 0.5mm-1mm.

[0013] Further, the heating in step S1 is to 150-250℃. The above temperature range is the temperature process window of the metal precursors used in the present application, and the metal precursors can realize typical ALD mode growth of thin films in the temperature range.

[0014] Further, the oxidant in step S2 is water or ozone, and the concentration of ozone is 100 mg / L. In the present application, the oxidant for tetra-dimethylamino tin and trimethyl indium is ozone, and the oxidant for diethyl zinc is water. The above oxidants are selected to ensure that the metal precursor ligand can be completely removed after the reaction to obtain a thin film with high purity.

[0015] Further, the inert gas in step S2 is N2, and the flow rate is 10-15 standard cubic centimeters per minute (sccm). The above gas flow rate changes the cavity gas pressure on the one hand, and ensures the uniform distribution of the metal precursor and the reactant in the cavity on the other hand, and ensures that the excess metal precursor and the reactant, and the reaction byproduct can be completely discharged from the cavity.

[0016] Further, the cavity gas pressure in step S1 is 0.10-0.20 Torr.

[0017] Further, the metal precursor pulse time in step S2 is 0.06-0.8 s, and the oxidant pulse time is 0.015-4 s. The cavity gas pressure change caused by the metal precursor pulse is about 0.08 Torr, the cavity gas pressure change caused by the water pulse is about 0.06 Torr, and the cavity gas pressure change caused by the ozone pulse is about 0.09 Torr. The above process conditions can realize the saturated adsorption and complete reaction of the metal precursor on the substrate.

[0018] Further, the first metal precursor material and the second metal precursor material in step S2 are any one or a combination of halides, alkyl compounds, cyclopentadienyl compounds, carbonyl compounds, and alkylamino compounds. Due to the obvious difference in the size and steric hindrance effect of the precursor molecules, the above different precursor combinations can obtain thin films with different doping ratios.

[0019] Further, a plurality of different kinds of metal precursor combinations can be selected in step S2 to prepare a multi-component thin film by the same process of inert gas purging. The above step solves the growth delay phenomenon existing in the traditional method and realizes the precise control of the thickness of the thin film.

[0020] The above method can prepare a uniform doped or multi-component thin film with low defect density and high density.

[0021] The present application has the following advantages and effects relative to the prior art:

[0022] (1) The present application takes into account the difference in steric hindrance between different precursors, and uses a three-step sub-cycle method to pass the second precursor before the first precursor molecule adsorbed on the substrate is oxidized, to occupy the unused active sites on the surface in advance, to realize the atomic vacancy filling of the first precursor molecule, greatly improving the density of the thin film and reducing the defect density in the thin film.

[0023] (2) Since the first step of the three-step cycle has occupied most of the active sites on the substrate surface, and the oxidation reaction of two different metal precursors in the same atomic monolayer is realized, the present application can realize uniform doping of ultra-low amount of elements, wherein the doping ratio is slightly adjusted by the ligand size of the selected doping element precursor and the first precursor.

[0024] (3) The method of the present application reduces the atomic gap filling effect of the precursors during the deposition of multi-component thin films, which not only reduces the atomic vacancies in the thin film and realizes the growth mode without growth delay, but also reduces the surface relief of the thin film and improves the surface properties of the thin film, which is beneficial to the good interface contact between the prepared thin film and the remaining functional layer. Compared with the existing super-cycle process, the present application shows excellent thin film thickness control and large-area uniformity, providing a great prospect for the development of atomic layer deposition of multi-component thin film materials. BRIEF DESCRIPTION OF DRAWINGS

[0025] The drawings described herein are used to provide further understanding of the present application, and form a part of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application, and do not constitute an improper limitation on the present application. In the drawings:

[0026] Figure 1 is a schematic diagram of the atomic stacking in the thin film and the surface relief of the thin film prepared by the present application and the conventional method;

[0027] Figure 2 is a comparison diagram of the actual growth rate and the ideal growth rate in Comparative Example 3 and Examples 3-5;

[0028] Figure 3 is a μ-PCD test result diagram of Comparative Example 3 and Example 3;

[0029] Figure 4 is a flowchart of a high-performance multi-component thin film preparation method based on defect induction regulation disclosed by the present application. DETAILED DESCRIPTION

[0030] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0031] Embodiment 1

[0032] The present embodiment discloses a high-performance multi-component thin film preparation method for preparing an InSnO thin film based on a three-step cycle method, and the steps are as follows:

[0033] S1. Taking trimethylindium (hereinafter referred to as TMI) and tetra-dimethylamino tin (hereinafter referred to as TDMASn) as ALD precursors, ozone as a reactant is taken as an example.

[0034] S2. The process flow of thin film deposition is as follows: 0.1 s of TMI metal precursor pulse injection, 45 s of nitrogen purge, 0.8 s of TDMASn metal precursor pulse injection, 45 s of nitrogen purge, 4 s of ozone oxidant pulse injection, and 30 s of nitrogen purge.

[0035] S3. Step S2 is repeated 100 times to obtain an InSnO thin film with a thickness of about 5.5 nm.

[0036] In the present embodiment, the TMI and TDMASn temperatures in step S1 are kept at 45℃ and 75℃ respectively to obtain sufficient saturated vapor pressure.

[0037] In the present embodiment, the cavity gas pressure in step S2 is 0.15 Torr, and the temperature is 200℃.

[0038] In the present embodiment, the carrier gas in step S2 is nitrogen, and the gas flow rate is 12 sccm.

[0039] The above method prepares an InSnO thin film with high density and low content of Sn element doping. Compared with an In2O3 thin film prepared without using the three-step cycle method, the density of the InSnO thin film prepared by the three-step cycle method is significantly improved, and the maximum surface fluctuation is smaller, about wherein, and are the maximum diameters of the inscribed circles of the molecular groups of In2O3 and SnO2 respectively, as shown in Table 1 and Figure 1 .

[0040] Embodiment 2

[0041] The present embodiment discloses a high-performance multi-component thin film preparation method for preparing a high-density and small amount of Zn-doped InZnO thin film based on a three-step cycle method, and the steps are as follows:

[0042] S1, taking trimethylindium (hereinafter referred to as TMI) and diethyl zinc (hereinafter referred to as DEZ) as ALD precursors, water as the reactant of DEZ, and ozone as the reactant of TMI;

[0043] S2, the process flow of thin film deposition is as follows: 0.1 s of TMI metal precursor pulse injection, 45 s of nitrogen purge, 0.06 s of DEZ metal precursor pulse injection, 45 s of nitrogen purge, 0.015 s of water oxidant injection, 30 s of nitrogen purge, 4 s of ozone oxidant pulse injection, and 30 s of nitrogen purge.

[0044] S3, repeating step S2 for 100 times to obtain an InZnO thin film with a thickness of about 7.5 nm.

[0045] In step S1 of the embodiment, the temperatures of TMI and DEZ are respectively kept at 45°C and 25°C to obtain sufficient saturated vapor pressure.

[0046] In step S2 of the embodiment, the cavity pressure is 0.20 Torr, and the temperature is 250°C.

[0047] In step S2 of the embodiment, the carrier gas is nitrogen, and the gas flow rate is 15 sccm.

[0048] The InZnO thin film prepared by the above method has high density and a small amount of Zn element doping. Compared with the In2O3 thin film prepared without using the three-step cycle method, the density of the InZnO thin film prepared by the three-step cycle method is significantly improved, and the maximum surface fluctuation is smaller, about wherein, and are the maximum diameters of the inscribed circles of the molecular groups of In2O3 and ZnO, respectively, as shown in Table 1 and Figure 1 The theoretical density of ZnO is about 5.6 g / cm 3 Theoretically, the density of the embodiment after doping with ZnO should be lower than that of Comparative Example 1, but the density is still improved compared with that of Comparative Example 1, which proves that the atomic arrangement inside the thin film is more compact.

[0049] Embodiment 3

[0050] The embodiment discloses a high-performance multi-component thin film preparation method for preparing an InSnZnO thin film based on a three-step cycle method, and the steps are as follows:

[0051] S1, taking trimethylindium (hereinafter referred to as TMI), tetra-dimethylamino tin (hereinafter referred to as TDMASn), and diethyl zinc (hereinafter referred to as DEZ) as ALD precursors, water as the reactant of DEZ, and ozone as the reactant of TMI and TDMASn;

[0052] S2, ALD three sub-cycle process includes InSnO, SnZnO and ZnInO.

[0053] S3, InSnZnO film is obtained by a super cycle of three sub-cycles in step S2.

[0054] In the step S1 of the embodiment, the temperatures of TMI, TDMASn and DEZ are respectively kept at 45℃, 75℃ and 25℃ to obtain sufficient saturated vapor pressure.

[0055] In the step S1 of the embodiment, the reactants of TMI, TDMASn and DEZ are respectively ozone, ozone and water.

[0056] In the step S2 of the embodiment, the cavity pressure is 0.15 Torr and the temperature is 200℃.

[0057] In the step S2 of the embodiment, the carrier gas is nitrogen and the gas flow rate is 12 sccm.

[0058] In the step S2 of the embodiment, the process flow of InSnO is: 0.1s TMI metal precursor pulse injection - purge for 45s - 0.8s TDMASn metal precursor pulse injection - nitrogen purge for 45s - 4s ozone oxidant pulse injection - nitrogen purge for 30s.

[0059] In the step S2 of the embodiment, the process flow of SnZnO is: 0.8s TDMASn metal precursor pulse injection - nitrogen purge for 45s - 0.06s DEZ metal precursor pulse injection - nitrogen purge for 45s - 0.02s H2O oxidant pulse injection - nitrogen purge for 30s - 4s ozone oxidant pulse injection - nitrogen purge for 30s.

[0060] In the step S2 of the embodiment, the process flow of ZnInO is: 0.06s DEZ metal precursor pulse injection - nitrogen purge for 45s - 0.1s TMI metal precursor pulse injection - nitrogen purge for 45s - 0.015s H2O oxidant pulse injection - nitrogen purge for 30s - 2s ozone oxidant pulse injection - nitrogen purge for 30s.

[0061] In the step S3 of the embodiment, the cycle sequence of sub-cycle is InSnO→SnZnO→ZnInO.

[0062] In the step S3 of the embodiment, the cycle number of each sub-cycle in a super cycle is 1.

[0063] In the step S3 of the embodiment, the cycle number of super cycle is 25 times and the thickness of the obtained film is about 6.5nm.

[0064] The above method produces an InSnZnO thin film with high density, low defect density and no growth delay, and the growth rate is only about The growth rate can be considered to be in accordance with the ideal case. Compared with the InSnZnO thin film produced by the conventional route, the peak value of Example 2 is higher and the surface distribution is more uniform, which proves that the defect density is lower, as shown in Figure 2 and Figure 3 .

[0065] The high-density, low-defect-state multi-component oxide semiconductor produced by the above method can be used for the semiconductor layer of a thin film transistor to improve the mobility and stability of the thin film transistor.

[0066] Example 4

[0067] Referring to steps S1 to S3 of Example 2, in step S2 of this example, the inert gas flow rate is 10 sccm, the cavity gas pressure is 0.10 Torr, and the temperature is 150°C.

[0068] This example produces an InSnZnO thin film with high density, low defect density and no growth delay, and the growth rate is only about The growth rate can be considered to be in accordance with the ideal case, which proves that the method mentioned in the present application solves the problem that the actual growth rate of the thin film produced by the conventional method is much lower than the ideal growth rate.

[0069] Example 5

[0070] Referring to steps S1 to S3 of Example 2, in step S2 of this example, the inert gas flow rate is 15 sccm, the cavity gas pressure is 0.20 Torr, and the temperature is 250°C.

[0071] This example produces an InSnZnO thin film with high density, low defect density and no growth delay, and the growth rate is only about The growth rate can be considered to be in accordance with the ideal case.

[0072] Comparative Example 1

[0073] This comparative example discloses a method for producing an In2O3 thin film based on a conventional method, and the specific preparation steps are as follows:

[0074] S1, using trimethylindium (TMI) as an ALD precursor and ozone as a reactant;

[0075] S2, the ALD sub-cycle process includes InO.

[0076] S3, the In2O3 film with a thickness of about 5.5 nm is obtained by repeating the cycle in step S2 for 100 times.

[0077] In the step S1 of the present comparative example, the TMI temperature is kept at 45°C to obtain sufficient saturated vapor pressure.

[0078] In the step S1 of the present comparative example, the reactants of TMI are ozone respectively.

[0079] In the step S2 of the present comparative example, the cavity gas pressure is 0.15 Torr and the temperature is 200°C.

[0080] In the step S2 of the present comparative example, the carrier gas is nitrogen and the gas flow rate is 12 sccm.

[0081] In the step S2 of the present comparative example, the InO process procedure is as follows: 0.1 s of TMI metal precursor pulse injection-nitrogen purge for 45 s-4 s of ozone oxidant pulse injection-nitrogen purge for 30 s.

[0082] The above method produces an In2O3 film with low density and high defect density. Due to the existence of atomic vacancies, the film density is lower than that of Example 1, as shown in Table 1.

[0083] Comparative Example 2

[0084] The present comparative example discloses a method for preparing an InSnO film based on a conventional supercycle method, and the specific preparation steps are as follows:

[0085] S1, using trimethylindium (hereinafter referred to as TMI) and tetra-dimethylamino tin (hereinafter referred to as TDMASn) as ALD precursors, and ozone as reactants;

[0086] S2, the ALD sub-cycle process includes InO and SnO;

[0087] S3, the InSnZnO film is obtained by repeating the two sub-cycles in step S2 for a certain number of times.

[0088] In the step S1 of the present comparative example, the TMI and TDMASn temperatures are kept at 45°C and 75°C respectively to obtain sufficient saturated vapor pressure.

[0089] In the step S1 of the present comparative example, the reactants of TMI and TDMASn are ozone.

[0090] In the step S2 of the present comparative example, the cavity gas pressure is 0.15 Torr and the temperature is 200°C.

[0091] In the step S2 of the present comparative example, the carrier gas is nitrogen and the gas flow rate is 12 sccm.

[0092] The InO process flow in the comparative example step S2 is: 0.1 s TMI metal precursor pulse injection-nitrogen purge for 45 s-4 s ozone oxidant pulse injection-nitrogen purge for 30 s.

[0093] The SnO process flow in the comparative example step S2 is: 0.8 s TDMASn injection-purge for 45 s-4 s ozone injection-purge for 30 s.

[0094] The cycle sequence of the sub-cycles in the comparative example step S3 is InO→SnO.

[0095] The cycle number of each sub-cycle in the comparative example step S3 in one super-cycle is 1.

[0096] The cycle number of the super-cycle in the comparative example step S3 is 100 times, and the film thickness is about 5.5 nm.

[0097] The above method produces an InSnO film with low density and large surface undulation, and the maximum surface undulation of the film is about 0.5 nm. wherein, and are the maximum diameters of the inscribed circles in the molecular groups of In2O3 and SnO2, respectively, as shown in Figure 1 .

[0098] Comparative Example 3

[0099] The comparative example discloses a preparation method of an InSnZnO film based on a conventional super-cycle method, and the specific preparation steps are as follows:

[0100] S1, taking trimethylindium (TMI), tetramethylammonium tin (TDMASn), and diethyl zinc (DEZ) as ALD precursors, and water and ozone as reactants;

[0101] S2, the ALD sub-cycle process includes InO, SnO, and ZnO.

[0102] S3, an InSnZnO film is obtained by alternately depositing the three sub-cycles in step S2 for a certain number of times to form one super-cycle.

[0103] In the comparative example step S1, the TMI, TDMASn, and DEZ temperatures are respectively maintained at 45°C, 75°C, and 25°C to obtain sufficient saturated vapor pressure.

[0104] In the comparative example step S1, the reactants of TMI, TDMASn, and DEZ are ozone, ozone, and water, respectively.

[0105] In the comparative example step S2, the cavity gas pressure is 0.15 Torr, and the temperature is 200°C.

[0106] The carrier gas in step S2 of the present comparative example is nitrogen, and the flow rate of the gas stream is 12 seem.

[0107] The InO process procedure in step S2 of the present comparative example is as follows: 0.1 s of TMI metal precursor pulse injection-nitrogen purge for 45 s-4 s of ozone oxidant pulse injection-nitrogen purge for 30 s.

[0108] The SnO process procedure in step S2 of the present comparative example is as follows: 0.8 s of TDMASn metal precursor pulse injection-nitrogen purge for 45 s-4 s of ozone oxidant pulse injection-nitrogen purge for 30 s.

[0109] The ZnO process procedure in step S2 of the present comparative example is as follows: 0.06 s of DEZ metal precursor pulse injection-nitrogen purge for 45 s-0.02 s of H2O oxidant pulse injection-nitrogen purge for 30 s.

[0110] The cycle sequence of the sub-cycles in step S3 of the present comparative example is InO→SnO→ZnO.

[0111] The number of cycles of each sub-cycle in one super-cycle in step S3 of the present comparative example is 1.

[0112] The number of cycles of the super-cycle in step S3 of the present comparative example is 35, and the film thickness is about 6.5 nm.

[0113] The growth rate of the present comparative example is lower than the ideal case There is an obvious growth delay phenomenon, which indicates that the traditional process can cause the film thickness to deviate greatly from the expectation, resulting in difficulty in controlling the film thickness. In addition, the peak value of the present comparative example is 76.4 mV, which is much lower than 124.4 mV of Example 3, and the peak value distribution of the present comparative example is relatively discrete, proving that the internal uniformity of the film is poor.

[0114] Table 1. Comparison table of results of Example 1, 2 and Comparative Example 1

[0115]

[0116] As can be seen from Table 1, in the binary cycle of Comparative Example 1, due to the steric hindrance effect between TMI precursor molecules, there are atomic vacancies in the atomic stacking process, resulting in a deviation of the film density from the theoretical density of In2O3 (~ 7.1 g / cm 3 ). By comparing the growth rates of Example 1 and Comparative Example 1, it can be found that the growth rates of the two are almost the same, which is because TMI occupies most of the active sites on the surface, resulting in only a small amount of TDMASn atoms being able to successfully occupy the active sites not occupied by TMI. Therefore, the growth rates of Example 1 and Comparative Example 1 are similar, and due to the effect of Sn atoms filling the atomic vacancies, the density of Example 1 is improved to 6.98 g / cm compared with Comparative Example 1.3 The elemental analysis results show that trace amount of Sn atom incorporation (~0.5%) is achieved in Example 1, and this amount of doping can be further increased by choosing precursors with smaller molecular volume for deposition, as shown in the results of Example 2 in Table 1.

[0117] The above examples are the preferred embodiments of the present application, but the embodiments of the present application are not limited to the above examples, and any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present application should be equivalent replacement methods, and are all included in the protection scope of the present application.

Claims

1. A method for preparing a high performance multi-component thin film based on defect-induced regulation, characterized in that, The preparation method comprises the following steps: S1, using trimethyl indium, tetra-dimethylamino tin and diethyl zinc as atomic layer deposition ALD precursors, the following trimethyl indium is referred to as TMI, tetra-dimethylamino tin is referred to as TDMASn, and diethyl zinc is referred to as DEZ, water is used as the reactant of DEZ, and ozone is used as the reactant of TMI and TDMASn; S2, the three-step sub-cycle process of atomic layer deposition ALD comprises InSnO, SnZnO and ZnInO; In the InSnO process, the TMI metal precursor is pulsed for 0.1 s, nitrogen is purged for 45 s, the TDMASn metal precursor is pulsed for 0.8 s, nitrogen is purged for 45 s, the ozone oxidant is pulsed for 4 s, and nitrogen is purged for 30 s; In the SnZnO process, the TDMASn metal precursor is pulsed for 0.8 s, nitrogen is purged for 45 s, the DEZ metal precursor is pulsed for 0.06 s, nitrogen is purged for 45 s, the H2O oxidant is pulsed for 0.02 s, nitrogen is purged for 30 s, the ozone oxidant is pulsed for 4 s, and nitrogen is purged for 30 s; In the ZnInO process, the DEZ metal precursor is pulsed for 0.06 s, nitrogen is purged for 45 s, the TMI metal precursor is pulsed for 0.1 s, nitrogen is purged for 45 s, the H2O oxidant is pulsed for 0.015 s, nitrogen is purged for 30 s, the ozone oxidant is pulsed for 2 s, and nitrogen is purged for 30 s; S3, one super cycle is formed by alternately depositing the three sub-cycles in S2, the cycle sequence is InSnO→SnZnO→ZnInO, the cycle number of each sub-cycle in one super cycle is 1, and the InSnZnO film is obtained after a certain number of cycles.

2. The method of claim 1, wherein the method is a defect-induced regulation based high performance multi-component thin film fabrication method. In step S1, the substrate is alkali-free glass, and the thickness is 0.5 mm-1 mm.

3. The method of claim 1, wherein the method is a defect-induced regulation based high performance multi-component thin film fabrication method. In step S2, the inert gas is N2, and the gas flow rate is 12 standard cubic centimeters per minute, which is referred to as sccm.

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