A semiconductor detection circuit and method, semiconductor detection equipment and storage medium

Abstract

The present application relates to the field of semiconductor detection technology, and in particular to a semiconductor detection circuit and method, a semiconductor detection device and a storage medium. A semiconductor detection circuit includes a plurality of voltage output circuits, which are connected to a plurality of semiconductor devices to be detected in a one-to-one correspondence; a plurality of reference voltage sources, which have non-overlapping voltage output ranges and different voltage output precisions; a reference voltage switching module, which includes a plurality of first input terminals connected to a plurality of reference voltage sources in a one-to-one correspondence, a plurality of first output terminals connected in parallel with each other, and a switching switch; a plurality of switching selection modules, which respectively include an amplifier circuit having a second input terminal and a second output terminal, and a selection switch; a plurality of analog-to-digital converters, which are arranged in a one-to-one correspondence with the plurality of switching selection modules, and respectively include a third input terminal and a third output terminal; and a control module.

Description

[0001] This application is a divisional application of the Chinese invention patent application with the application date of February 18, 2024, named Semiconductor Detection Circuit and Method, Semiconductor Detection Equipment and Storage Medium, and application number 202410181599.7. Technical Field

[0002] The present application relates to the field of semiconductor detection technology, and in particular to a semiconductor detection circuit and method, a semiconductor detection device and a storage medium. Background Art

[0003] During the production or research of semiconductor devices, they need to be frequently tested, and when performing the above-mentioned tests, it is necessary to apply a specified voltage to the semiconductor device to be tested so that it is in the desired working state. The operating voltage (detection voltage) required by semiconductor devices of different types or specifications is different, and may even differ by hundreds of times. Generally speaking, for semiconductor devices with very small rated working voltages (e.g., millivolts), the accuracy requirements for the access voltage (detection voltage) are very high. For example, it requires that the deviation between the access detection voltage and its rated working voltage is within one millivolt, otherwise the device will not work in an ideal state, which will lead to a large deviation in the test results. For semiconductor devices with larger rated working voltages (e.g., hundreds of volts), the accuracy requirements for the access voltage (detection voltage) are relatively small. Even if the access detection voltage has a deviation of one volt from its rated working voltage, it will not significantly affect the working state of the semiconductor device.

[0004] In order to confirm that the detection voltage directly applied to the two ends of the semiconductor device to be tested by the semiconductor detection equipment is an ideal voltage, it is necessary to detect the detection voltage with the help of an analog to digital converter (ADC), and adjust the voltage based on the detection result. In this way, it is very important to accurately fit the voltage fitting curve of the analog to digital converter. The current semiconductor detection equipment cannot detect multiple semiconductor devices of different specifications (different detection voltages are required) at the same time. If multiple voltage output circuits are configured in the semiconductor detection equipment, and the multiple voltage output circuits provide detection voltages for multiple semiconductor devices of different specifications, it is necessary to pre-fit the voltage fitting curve of the analog to digital converter corresponding to each voltage output circuit or each semiconductor device. As mentioned above, semiconductor devices with small rated operating voltages have high requirements for the accuracy of the access voltage, so the fitting accuracy requirements for the voltage fitting curve of the corresponding analog to digital converter are also relatively high, while semiconductor devices with large rated operating voltages have low requirements for the accuracy of the access voltage, so the fitting accuracy requirements for the voltage fitting curve of the corresponding analog to digital converter are relatively low. If a reference voltage source with a wide voltage output range and extremely high output accuracy is configured in a semiconductor detection setting to fit the voltage fitting curves of each analog-to-digital converter, the manufacturing cost of the semiconductor detection equipment will increase significantly. In addition, the accuracy of such a wide voltage range reference voltage source is usually difficult to guarantee when it provides a very low output voltage. Summary of the invention

[0005] In view of this, the present application proposes a semiconductor detection circuit and method, and a semiconductor detection device.

[0006] In a first aspect, the present application proposes a semiconductor detection circuit, comprising:

[0007] A plurality of voltage output circuits, the plurality of voltage output circuits are connected to a plurality of semiconductor devices to be detected one by one, so as to provide working voltages for the plurality of semiconductor devices respectively, wherein each of the semiconductor devices is led out with a voltage detection terminal;

[0008] A plurality of reference voltage sources, wherein the plurality of reference voltages have non-overlapping voltage output ranges and different voltage output precisions;

[0009] a reference voltage switching module, the reference voltage switching module comprising a plurality of first input terminals connected to the plurality of reference voltage sources in a one-to-one correspondence, a plurality of first output terminals connected in parallel with each other, and a switch, wherein the switch is used to selectively connect the plurality of first output terminals to each of the plurality of first input terminals;

[0010] A plurality of switch selection modules, each of which comprises an amplifier circuit having a second input terminal and a second output terminal, and a selection switch, wherein the selection switch is used to connect the first output terminal to the second input terminal or to connect the voltage detection terminal to the second input terminal;

[0011] A plurality of analog-to-digital converters, the plurality of analog-to-digital converters are arranged in one-to-one correspondence with the plurality of switching selection modules, and respectively include a third input terminal and a third output terminal, wherein the third input terminal is connected to the second output terminal;

[0012] A control module is connected to the reference voltage source, the reference voltage switching module, the voltage output circuit, the switching selection module and the analog-to-digital converter respectively.

[0013] In some possible implementations, the control module is configured as follows:

[0014] According to the rated operating voltage of the semiconductor device, selecting the corresponding reference voltage source to be connected to the analog-to-digital converter to determine a voltage fitting curve of the analog-to-digital converter;

[0015] The voltage detection terminal is connected to the analog-to-digital converter, and the output voltage of the voltage output circuit is adjusted according to the digital signal output by the analog-to-digital converter, the rated operating voltage of the semiconductor device and the voltage fitting curve.

[0016] In some possible implementations, the control module is configured as follows:

[0017] Obtaining a rated operating voltage of each of the semiconductor devices to obtain a plurality of rated operating voltages;

[0018] Determine the voltage range in which each of the multiple rated operating voltages is located, and thereby determine that P of the multiple rated operating voltages are within a first voltage range, and another Q of the multiple rated operating voltages are within a second voltage range, wherein the first voltage range is a voltage output range of a first reference voltage source among the multiple reference voltage sources, the second voltage range is a voltage output range of a second reference voltage source among the multiple reference voltage sources, the P semiconductor devices corresponding to the P rated operating voltages are first semiconductor devices, the Q semiconductor devices corresponding to the Q rated operating voltages are second semiconductor devices, and P and Q are positive integers;

[0019] Enable the switch to connect the plurality of first output terminals to a target input terminal, wherein the target input terminal is the first input terminal corresponding to the first reference voltage source;

[0020] Controlling the circuit parts corresponding to all the first semiconductor devices to simultaneously perform the following operations:

[0021] causing the selection switch to connect the first output terminal to the second input terminal,

[0022] The first reference voltage source is made to output a plurality of first reference voltages which are different from each other in time periods, and in this process, the first digital signal output by the analog-to-digital converter in each time period is obtained to obtain a plurality of first digital signals.

[0023] determining a first voltage fitting curve of the analog-to-digital converter according to the plurality of first reference voltages and the plurality of first digital signals,

[0024] The selection switch connects the voltage detection terminal to the second input terminal to obtain a second digital signal output by the analog-to-digital converter,

[0025] determining a first current operating voltage of the first semiconductor device according to the second digital signal and the first voltage fitting curve,

[0026] adjusting the output voltage of the voltage output circuit according to the difference between the first current operating voltage and the rated operating voltage of the first semiconductor device,

[0027] Afterwards, the switching switch is enabled to connect the plurality of first output terminals to another target input terminal, wherein the another target input terminal is the first input terminal corresponding to the second reference voltage source;

[0028] Controlling the circuit parts corresponding to all the second semiconductor devices to simultaneously perform the following operations:

[0029] causing the selection switch to connect the first output terminal to the second input terminal,

[0030] The second reference voltage source is made to output a plurality of second reference voltages which are different from each other in time periods, and in this process, a third digital signal output by the analog-to-digital converter in each time period is obtained to obtain a plurality of third digital signals;

[0031] determining a second voltage fitting curve of the analog-to-digital converter according to the plurality of second reference voltages and the plurality of third digital signals,

[0032] The selection switch connects the voltage detection terminal to the second input terminal to obtain a fourth digital signal output by the analog-to-digital converter,

[0033] determining a second current operating voltage of the second semiconductor device according to the fourth digital signal and the second voltage fitting curve,

[0034] The output voltage of the voltage output circuit is adjusted according to a difference between the second current operating voltage and a rated operating voltage of the second semiconductor device.

[0035] In some possible implementations, before the selection switch connects the voltage detection terminal to the first input terminal, the control module is configured to: enable the corresponding voltage output circuit to output a respective first initial voltage, where the first initial voltage is a rated operating voltage of the first semiconductor device corresponding to the voltage output circuit;

[0036] Before the selection switch connects the voltage detection terminal to the second input terminal, the control module is configured to enable the corresponding voltage output circuit to output a respective second initial voltage, wherein the second output voltage is a rated operating voltage of the second semiconductor device corresponding to the voltage output circuit.

[0037] In some possible implementations, the semiconductor detection circuit further includes:

[0038] Ground, used to provide ground potential;

[0039] The third input terminal includes a positive input terminal and a negative input terminal, and the ground terminal of the analog-to-digital converter is directly connected to the negative input terminal without passing through the ground.

[0040] In a second aspect, the present application proposes a voltage correction method, which can be applied to the semiconductor detection circuit as described in the first aspect, and the method comprises:

[0041] According to the rated operating voltage of the semiconductor device, selecting the corresponding reference voltage source to be connected to the analog-to-digital converter to determine a voltage fitting curve of the analog-to-digital converter;

[0042] The voltage detection terminal is connected to the analog-to-digital converter, and the output voltage of the voltage output circuit is adjusted according to the digital signal output by the analog-to-digital converter, the rated operating voltage of the semiconductor device and the voltage fitting curve.

[0043] In some possible implementations, the method includes:

[0044] Obtaining a rated operating voltage of each of the semiconductor devices to obtain a plurality of rated operating voltages;

[0045] Determine the voltage range in which each of the multiple rated operating voltages is located, and thereby determine that P of the multiple rated operating voltages are within a first voltage range, and another Q of the multiple rated operating voltages are within a second voltage range, wherein the first voltage range is a voltage output range of a first reference voltage source among the multiple reference voltage sources, the second voltage range is a voltage output range of a second reference voltage source among the multiple reference voltage sources, the P semiconductor devices corresponding to the P rated operating voltages are first semiconductor devices, the Q semiconductor devices corresponding to the Q rated operating voltages are second semiconductor devices, and P and Q are positive integers;

[0046] Enable the switch to connect the plurality of first output terminals to a target input terminal, wherein the target input terminal is the first input terminal corresponding to the first reference voltage source;

[0047] Controlling the circuit parts corresponding to all the first semiconductor devices to simultaneously perform the following operations:

[0048] causing the selection switch to connect the first output terminal to the second input terminal,

[0049] The first reference voltage source is made to output a plurality of first reference voltages which are different from each other in time periods, and in this process, the first digital signal output by the analog-to-digital converter in each time period is obtained to obtain a plurality of first digital signals.

[0050] determining a first voltage fitting curve of the analog-to-digital converter according to the plurality of first reference voltages and the plurality of first digital signals,

[0051] The selection switch connects the voltage detection terminal to the second input terminal to obtain a second digital signal output by the analog-to-digital converter,

[0052] determining a first current operating voltage of the first semiconductor device according to the second digital signal and the first voltage fitting curve,

[0053] adjusting the output voltage of the voltage output circuit according to the difference between the first current operating voltage and the rated operating voltage of the first semiconductor device,

[0054] Afterwards, the switching switch is enabled to connect the plurality of first output terminals to another target input terminal, wherein the another target input terminal is the first input terminal corresponding to the second reference voltage source;

[0055] Controlling the circuit parts corresponding to all the second semiconductor devices to simultaneously perform the following operations:

[0056] causing the selection switch to connect the first output terminal to the second input terminal,

[0057] The second reference voltage source is made to output a plurality of second reference voltages which are different from each other in time periods, and in this process, a third digital signal output by the analog-to-digital converter in each time period is obtained to obtain a plurality of third digital signals;

[0058] determining a second voltage fitting curve of the analog-to-digital converter according to the plurality of second reference voltages and the plurality of third digital signals,

[0059] The selection switch connects the voltage detection terminal to the second input terminal to obtain a fourth digital signal output by the analog-to-digital converter,

[0060] determining a second current operating voltage of the second semiconductor device according to the fourth digital signal and the second voltage fitting curve,

[0061] The output voltage of the voltage output circuit is adjusted according to a difference between the second current operating voltage and a rated operating voltage of the second semiconductor device.

[0062] In some possible implementations, before the selection switch connects the voltage detection terminal to the first input terminal, the method further includes: enabling the corresponding voltage output circuit to output a respective first initial voltage, where the first output initial voltage is a rated operating voltage of the first semiconductor device corresponding to the voltage output circuit;

[0063] Before the selection switch connects the voltage detection terminal to the second input terminal, the method further includes: enabling the corresponding voltage output circuit to output a respective second initial voltage, wherein the second output initial voltage is a rated operating voltage of the second semiconductor device corresponding to the voltage output circuit.

[0064] In a third aspect, the present application proposes a semiconductor detection device, comprising the semiconductor detection circuit as described in the first aspect.

[0065] In a fourth aspect, the present application proposes a computer-readable storage medium storing program instructions, which, when executed by a computer, causes the computer to execute the method described in the first aspect.

[0066] According to the semiconductor detection circuit provided by the present application, a plurality of reference voltage sources are configured, which have non-overlapping voltage output ranges and different voltage output precisions, so that when detecting a semiconductor device with a small rated operating voltage and a high voltage precision requirement, a reference voltage source with a small voltage output but a high precision is used to fit the voltage curve of the analog-to-digital converter corresponding to the semiconductor device; and when detecting a semiconductor device with a large rated operating voltage and a low voltage precision requirement, a reference voltage source with a large voltage output and a low precision is used to fit the voltage curve of the analog-to-digital converter corresponding to the semiconductor device, so that the detection circuit can efficiently and accurately detect a plurality of semiconductor devices of different specifications at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present application, rather than limiting the present application.

[0068] Figure 1 It is a structural schematic diagram of a semiconductor detection circuit provided in one embodiment of the present application.

[0069] Figure 2 It is a flow chart of a semiconductor detection method provided in one embodiment of the present application.

[0070] Figure 3 and Figure 4 It is a flow chart of a semiconductor detection method provided in one embodiment of the present application. DETAILED DESCRIPTION

[0071] In order to make the purpose, technical scheme and advantages of the present application clearer, the technical scheme of the embodiment of the present application will be clearly and completely described below in conjunction with the drawings of the embodiment of the present application. Obviously, the described embodiment is a part of the embodiment of the present application, rather than all the embodiments. Based on the described embodiment of the present application, all other embodiments obtained by ordinary technicians in this field without creative work belong to the scope of protection of this application. It can be understood that, in the absence of conflict, some technical means of the various embodiments described herein can be replaced or combined with each other.

[0072] In the description of this application, if there are terms such as "first", "second", etc., they are only used to distinguish the objects described and do not have any order or technical meaning. Therefore, an object defined as "first", "second", etc. may explicitly or implicitly include one or more of the objects. In addition, "one" or "a" and similar words do not indicate a quantity limitation, but rather indicate the presence of at least one, and "multiple" means no less than two.

[0073] In the description of this specification, reference to "one embodiment" or "some embodiments" etc. means that one or more embodiments of the present application include a specific feature, structure or characteristic described in conjunction with the embodiment. Therefore, the phrases "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. appearing in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways.

[0074] Figure 1 FIG. 1 shows a semiconductor detection circuit provided by an embodiment of the present application, which can simultaneously perform performance detection on multiple semiconductor devices, even when the models of these semiconductor devices are similar or different from each other. In more detail, the semiconductor detection circuit can simultaneously Figure 1 A plurality of semiconductor devices to be inspected (in Figure 1 In the figure, represented by the reference symbol R2) provides an ideal operating voltage so that they are all in an ideal working state, so as to judge the quality of the semiconductor device under the standard working state.

[0075] The semiconductor detection circuit includes a plurality of reference voltage sources, a reference voltage switching module, a plurality of voltage output circuits, a plurality of switching selection modules, a plurality of analog to digital converters (ADCs) and a control module. The control module may be an MCU (Microcontroller Unit) chip.

[0076] Despite Figure 1 The number of reference voltage sources, voltage output circuits, switching selection modules and analog-to-digital converters is shown as 3 respectively, but it should be understood that the number of reference voltage sources, voltage output circuits, switching selection modules and analog-to-digital converters can also be configured to other values, for example, the number of reference voltage sources is 2, and the number of voltage output circuits, switching selection modules and analog-to-digital converters is 5 respectively.

[0077] The plurality of voltage output circuits are connected to the plurality of semiconductor devices to be detected one by one to provide working voltages for the plurality of semiconductor devices respectively. The two ends of each of the plurality of loads are respectively connected to a voltage detection terminal (at Figure 1 2 and 4 in the figure).

[0078] In some embodiments, the semiconductor detection circuit is installed in a semiconductor detection device and is enclosed and protected by a housing of the semiconductor detection device. In addition, the semiconductor detection device has multiple voltage supply lines extending outward (parallel signal lines may also be integrated on the voltage supply lines to perform signaling interaction between the semiconductor detection device and the semiconductor device to be tested), and multiple voltage detection terminals are connected in parallel to the aforementioned multiple voltage supply lines one by one, and each voltage supply line is connected to a corresponding voltage output circuit inside the semiconductor detection device. When in use, the voltage supply line can be connected (detachably connected) to the semiconductor device to be tested to provide the semiconductor device with the operating voltage required for detection. At this time, the voltage detection terminal is just connected to the two ends of the semiconductor device to be tested, so that the voltage detected from the voltage detection terminal is equal to the current operating voltage of the semiconductor device.

[0079] The original voltage provided by the voltage output circuit must pass through the conductive circuit before reaching the semiconductor device to be tested. The conductive circuit has resistance and other voltage absorption values, so the voltage actually obtained by the semiconductor device is usually not the same as the original voltage provided by the voltage output circuit (the terminal voltage of the voltage output circuit). Figure 1 In the figure, R2 represents the semiconductor device to be tested, and R1 and R3 represent the line resistance of the conductive line between the voltage output circuit and the semiconductor device to be tested. In addition, the voltage output circuit itself also has internal resistance and hardware aging, so even if the control module operates the voltage output circuit with specified parameters in the expectation that it outputs the target voltage (for example, the target voltage is the rated operating voltage of the semiconductor device to be tested), the original voltage actually output by the voltage output circuit may still be different from the target voltage. Therefore, it is necessary to adjust the output of the voltage output circuit so that the current operating voltage of the semiconductor device to be tested is adjusted to the ideal voltage that is most conducive to performance testing - the rated operating voltage of the semiconductor device.

[0080] Multiple reference voltage sources have non-overlapping voltage output ranges and different voltage output precisions. Here, "non-overlapping" means that there are no overlapping intervals, but not including endpoint values. Figure 1In the figure, the voltage output range of the reference voltage source on the right is 10.0mV-100.0mV, and the voltage output accuracy is 0.1mV. It can be operated to selectively output reference voltages of 10.1mV, 10.2mV, 10.3mV…100.0mV; the voltage output range of the reference voltage source in the middle position is 100mV-1000mV, and the voltage output accuracy is 1mV. It can be operated to selectively output reference voltages of 100mV, 101mV, 102mV…1000mV; the voltage output range of the reference voltage source on the left is 1.0V-100.0V, and the voltage output accuracy is 0.1V (i.e. 100mV). It can be operated to selectively output reference voltages of 1.0V, 1.1V, 1.2V…100.0V.

[0081] It can be understood that compared with semiconductor devices with a rated operating voltage of tens of volts (for example, 36V), semiconductor devices with a rated operating voltage of only tens of millivolts or even a few millivolts have higher requirements on the accuracy of the incoming voltage, and therefore, the fitting accuracy requirements for the voltage fitting curve of the corresponding analog-to-digital converter are also higher. If a reference voltage source with a wide voltage output range and high precision (for example, a voltage output range of 0-100V and a voltage output accuracy of 0.1mV) is used to fit the voltage fitting curve of the following analog-to-digital converter that detects the current operating voltage of various semiconductor devices, the manufacturing cost of the semiconductor detection equipment will be significantly increased. Moreover, when such a reference voltage source with a wide voltage range operates to provide a very low output voltage, such as 20.0mV, the accuracy is usually difficult to guarantee. In this regard, the semiconductor detection circuit provided in this embodiment is configured with multiple reference voltage sources, which have non-overlapping voltage output ranges and different voltage output accuracies, so that when detecting a semiconductor device with a small rated operating voltage and high voltage accuracy requirements, a reference voltage source with a small voltage output but high accuracy is used to fit the voltage curve of the analog-to-digital converter corresponding to the semiconductor device; and when detecting a semiconductor device with a large rated operating voltage and low voltage accuracy requirements, a reference voltage source with a large voltage output and low accuracy is used to fit the voltage curve of the analog-to-digital converter corresponding to the semiconductor device, thereby overcoming the aforementioned problems.

[0082] The reference voltage switching module includes a plurality of first input terminals (in Figure 1 In the figure, a plurality of first output terminals connected in parallel to each other (shown as hollow circles in Figure 1 1 and 3), and a switch K1. The switch K1 is used to selectively connect the plurality of first output terminals to each of the plurality of first input terminals. For example, in one application scenario, the switch K1 is used to connect Figure 1The first output terminals in the embodiment are connected to the first input terminals on the left. In another application scenario, the switch K1 is used to Figure 1 The plurality of first output terminals are connected to the first input terminal on the right.

[0083] Each switching selection module includes an amplifier circuit having a second input terminal and a second output terminal, and a selection switch K2, wherein the selection switch K2 is used to connect the first output terminal to the second input terminal or to connect the voltage detection terminal to the second input terminal.

[0084] The multiple analog-to-digital converters are arranged in one-to-one correspondence with the multiple switching selection modules, and respectively include a third input terminal and a third output terminal, wherein the third input terminal is connected to the second output terminal, and the third output terminal is connected to the control module.

[0085] The control module is respectively connected to the aforementioned reference voltage source, the reference voltage switching module, the voltage output circuit, the switching selection module and the analog-to-digital converter.

[0086] In addition, the semiconductor detection circuit also includes a "ground" which is used to provide a ground potential. For example, the ground can be a conductive copper layer formed on a circuit board to provide a ground potential for each voltage output circuit.

[0087] The third input terminal of the analog-to-digital converter includes a positive input terminal, a negative input terminal and a ground terminal (at Figure 1 In the figure (indicated by the reference symbol G), the ground terminal of the analog-to-digital converter is not grounded, but directly connected to its negative input terminal (not through the aforementioned "ground"). This is because each voltage output circuit in the semiconductor detection circuit is a high-frequency switching power supply, which will generate current on the "ground". If the ground terminal of the analog-to-digital converter is connected to the ground, the ground terminal (G) as the reference point will be interfered by the high-frequency signal, thereby affecting the measurement accuracy of the analog-to-digital converter.

[0088] In some embodiments, the semiconductor detection circuit further includes an isolation module, and the high frequency components of the external voltage source are isolated after passing through the isolation module, so the voltage output through the isolation module is pure and has an isolation effect. The output end of the isolation module is connected to the aforementioned reference voltage source.

[0089] Next, see Figures 2 to 4 , introduces a semiconductor detection method provided by an embodiment of the present application, which can be applied to Figure 1 The semiconductor detection circuit shown in the figure, that is, the semiconductor detection method can be executed by the semiconductor detection circuit, more specifically, by the control module in the semiconductor detection circuit. The method includes:

[0090] S201, selecting a corresponding reference voltage source to connect to an analog-to-digital converter according to a rated operating voltage of the semiconductor device, so as to determine a voltage fitting curve of the analog-to-digital converter;

[0091] S202, connecting the voltage detection terminal to the analog-to-digital converter, and adjusting the output voltage of the voltage output circuit according to the digital signal output by the analog-to-digital converter, the rated operating voltage of the semiconductor device and the voltage fitting curve.

[0092] In this embodiment, the control module first selects a suitable reference voltage source to calibrate the analog-to-digital converter on the corresponding branch according to the rated operating voltage of the semiconductor device to be tested, so as to obtain the voltage fitting curve of the analog-to-digital converter, and then uses the analog-to-digital converter to detect the current operating voltage of the semiconductor device to be tested, and adjusts the output voltage of the corresponding voltage output circuit according to the voltage fitting curve of the analog-to-digital converter obtained by calibration, as well as the difference between the current operating voltage and the ideal rated operating voltage, until the actual operating voltage of the semiconductor device to be tested corresponds to its rated operating voltage.

[0093] See also Figure 3 and Figure 4 , the method specifically comprises:

[0094] S301, obtaining a rated operating voltage of each semiconductor device to obtain a plurality of rated operating voltages.

[0095] The rated operating voltage of the semiconductor device can be informed to the control module by the operator through an input device such as a keyboard input into the semiconductor testing equipment. In an exemplary embodiment (for ease of explanation, this embodiment is referred to as embodiment BB), the semiconductor devices to be tested are divided into three groups according to different models, and the semiconductor devices of the same model in the same group are placed on the same transmission line. The three transmission lines carry the three types of semiconductor devices to the aforementioned semiconductor testing equipment, and then the semiconductor devices on different transmission lines are automatically or semi-automatically connected to different voltage supply terminals of the semiconductor testing equipment by the machine, and before that, the operator can input the rated operating voltage information of the semiconductor devices on each transmission line to the semiconductor testing equipment in advance.

[0096] S302, determine the voltage range of each of the multiple rated operating voltages, and thereby determine that P of the multiple rated operating voltages are within a first voltage range, and another Q of the multiple rated operating voltages are within a second voltage range, wherein the first voltage range is a voltage output range of a first reference voltage source among the multiple reference voltage sources, the second voltage range is a voltage output range of a second reference voltage source among the multiple reference voltage sources, the P semiconductor devices corresponding to the P rated operating voltages are first semiconductor devices, the Q semiconductor devices corresponding to the Q rated operating voltages are second semiconductor devices, and P and Q are positive integers.

[0097] After the control module obtains the information about the rated operating voltage of each semiconductor device, it can determine within which voltage output range of the reference voltage source each of these rated operating voltages is located.

[0098] In with Figure 1 In a corresponding example AA, the control module determines that two of the rated operating voltages (32.0 mV and 50.0 mV, respectively) are within the voltage output range (10.0 mV-100.0 mV) of the right reference voltage source, and the other rated operating voltage (24.0 V) is within the voltage output range (1.0 V-100.0 V) of the left reference voltage source, and Figure 1 The two semiconductor devices on the upper side and in the middle are first semiconductor devices. Figure 1 The semiconductor device at the lower middle side is the second semiconductor device. Obviously, in this example AA, P=2, Q=1.

[0099] In other embodiments, the control module may determine that all three rated operating voltages (eg, 32.0 mV, 50.0 mV, and 32.0 mV, respectively) are within the voltage output range (10.0 mV-100.0 mV) of the right reference voltage source.

[0100] S303, enabling the switch to connect the plurality of first output terminals to a target input terminal, wherein the target input terminal is a first input terminal corresponding to the first reference voltage source.

[0101] After determining that there is a semiconductor device corresponding to the voltage output range of the first reference voltage source among the currently connected semiconductor devices, the control module can control the switching action of the reference voltage switching module to connect all the first output terminals to the first input terminals corresponding to the first reference voltage source, thereby connecting the first reference voltage source to the circuit.

[0102] For example, in the above example AA, the control module connects the switch to Figure 1 The first input on the right.

[0103] Then, the circuit parts corresponding to all the first semiconductor devices (including the corresponding switching rotation modules and the voltage output circuit) are controlled to simultaneously perform the following operations from S304 to S309:

[0104] S304, enabling the selection switch to connect the first output terminal to the second input terminal.

[0105] After the first reference voltage source is connected to the circuit, the control module controls the selection switch in the corresponding switching selection module to connect the first output terminal to the second input terminal.

[0106] For example, in the above example AA, the control module uses Figure 1 The selector switch of the upper switching selection module is actuated to connect the upper first output terminal to the second input terminal of the upper switching selection module, and also to Figure 1 The selection switch of the intermediate switching selection module is actuated to connect the intermediate first output terminal to the second input terminal of the intermediate switching selection module. Figure 1 The selection switch of the middle and lower side switching selection module may be connected neither to the first output terminal nor to the voltage detection terminal.

[0107] S305 , enabling the first reference voltage source to successively output a plurality of first reference voltages that are different from each other in time periods, and in this process, acquiring a first digital signal output by the analog-to-digital converter in each time period to obtain a plurality of first digital signals.

[0108] For example, in the above example AA, the control module can provide a first reference voltage source, that is, Figure 1 The right reference voltage source sends a control signal to make the right reference voltage source output multiple reference voltages in a certain time interval, for example, outputting 10.0mV, 11.0mV, 12.0mV…100.0mV, a total of 101 first reference voltages. At the same time, these first reference voltages are respectively transmitted through Figure 1 The amplifier circuits on the upper middle side and in the middle amplify the signal by a specified multiple (eg, 100 times) and then receive the signal from the analog-to-digital converter. The analog-to-digital converter converts the analog voltage signal it receives into a digital signal, namely, a first digital signal, and transmits it to the control module.

[0109] The analog-to-digital converter cannot collect tiny voltage signals (e.g., voltage signals of only a few millivolts), and cannot convert tiny voltage signals into digital signals. In this embodiment, the amplifier circuit can amplify the tiny voltage signal connected to the second input terminal and transmit it to the analog-to-digital converter, thus overcoming the aforementioned problems.

[0110] S306: Determine a voltage fitting curve of the analog-to-digital converter according to the multiple first reference voltages and the multiple first digital signals.

[0111] Different analog-to-digital converters have differences in themselves and the environment. Therefore, in the above example AA, Figure 1 When the same voltage (analog signal) is input to the analog-to-digital converter on the upper side and the middle analog-to-digital converter, it may be converted into different digital signals, that is, the two analog-to-digital converters have different voltage response curves. Therefore, in example AA, the control module can fit the voltage fitting curve of the upper analog-to-digital converter based on the aforementioned 101 first reference voltages and the 101 digital signals respectively output by the upper analog-to-digital converter during the provision of the 101 first reference voltages, and fit the voltage fitting curve of the middle analog-to-digital converter based on the aforementioned 101 first reference voltages and the 101 digital signals respectively output by the middle analog-to-digital converter during the provision of the 101 first reference voltages.

[0112] The method for obtaining the voltage fitting curve of the analog-to-digital converter is well known, such as a linear fitting method, a nonlinear fitting method, etc., which will not be described in detail here.

[0113] S307, enabling the selection switch to connect the voltage detection terminal to the second input terminal to obtain a second digital signal output from the analog-to-digital converter.

[0114] For example, in the above example AA, after obtaining the voltage fitting curves of the upper analog-to-digital converter and the middle analog-to-digital converter, the selection switches of the upper and middle switching selection modules are actuated, and the upper and middle voltage detection terminals are connected to the upper and middle second input terminals, respectively. At this time, the operating voltages at both ends of the upper and middle semiconductor devices are respectively connected via Figure 1 The upper middle and middle amplifier circuits amplify the signals by a specified multiple (eg, 100 times) and then receive the signals from the analog-to-digital converter. The analog-to-digital converter converts the analog voltage signals it receives into digital signals, namely, second digital signals, and transmits them to the control module.

[0115] In some embodiments, before step S307, the method further includes: enabling the corresponding voltage output circuit to output a respective first initial voltage, the first initial voltage being the rated operating voltage of the first semiconductor device corresponding to the voltage output circuit. Figure 1 The voltage output circuits on the upper side and the middle send control signals so that they can output initial voltages of about 32mV and about 50mV respectively. In this way, it is possible to prevent the second semiconductor device from being damaged by obtaining an initial operating voltage that is too high, and to help quickly adjust the current actual operating voltage of the second semiconductor device to the rated operating voltage.

[0116] In some embodiments, the selection switch K2 is a relay switch. Since the rated operating voltage of some semiconductor devices is very small, the connection quality of the selection switch K2 is very important. In order to ensure that the connection point of the selection switch K2 is good, a contact impedance test is added. The principle is that a reference current source provides a large current to flow through the contact of the selection switch K2, and the voltage across the contact is detected. If the contact is in good contact, the voltage across the contact is infinitely small. If the contact is abnormal, the voltage across the contact will become larger. For example, when the reference current source provides a current of 10A, the measurement Figure 1 The voltage between PIN1 and point M and the voltage between PIN3 and point N, if the voltage is infinitely small (such as 2mV), it means that the contact impedance is small and the contact is normal; otherwise, the contact point is NG and the detection is terminated. Similarly, the two voltages of PIN2 and point M, PIN4 and point N are collected for judgment.

[0117] S308 , determining a first current operating voltage of the first semiconductor device according to the second digital signal and the voltage fitting curve.

[0118] The control module can determine the current operating voltage of the first semiconductor device, ie, the first current operating voltage, according to the value of the second digital signal currently output by the analog-to-digital converter and the position of the value on the voltage fitting curve of the analog-to-digital converter.

[0119] S309, adjusting the output voltage of the voltage output circuit according to the difference between the first current operating voltage and the rated operating voltage of the first semiconductor device.

[0120] For example, in the aforementioned example AA, when the control module learns that there is an unacceptable difference between the current operating voltage of the upper semiconductor device and its rated operating voltage (for example, the difference causes the semiconductor to operate in an unsatisfactory state, thereby affecting the detection result), it can send a control signal to the voltage output circuit to change the output voltage of the voltage output circuit, so that the difference between the current operating voltage of the upper semiconductor device and its rated operating voltage is within an acceptable range.

[0121] After S309, more specifically, after the current operating voltage of each first semiconductor device is adjusted to be close to (or consistent with) its rated operating voltage, the control module causes the switch to connect the plurality of first output terminals to another target input terminal, which is a first input terminal corresponding to the second reference voltage source. For example, in the aforementioned example AA, the second reference voltage source is Figure 1 The reference voltage source on the left side of the diagram.

[0122] Then, the control module controls the circuit parts corresponding to all the second semiconductor devices to simultaneously perform the following operation of S315:

[0123] S310, enabling the selection switch to connect the first output terminal to the second input terminal.

[0124] For example, in the above example AA, Figure 1 After the reference voltage source on the left side is input into the circuit, the control module uses Figure 1 The selection switch of the middle and lower switching selection module is actuated to connect the lower first output terminal to the second input terminal of the lower switching selection module. Figure 1 The selection switches of the upper-middle and middle switching selection modules may be connected neither to the first output terminal nor to the voltage detection terminal.

[0125] S311, making the second reference voltage source output a plurality of second reference voltages that are different from each other in time periods, and in this process, acquiring a third digital signal output by a corresponding analog-to-digital converter in each time period to obtain a plurality of third digital signals.

[0126] For example, in example AA, the control module can provide a second reference voltage source, that is, Figure 1 The left reference voltage source sends a control signal to make the left reference voltage source output multiple reference voltages in a certain time interval, for example, output 100 second reference voltages of 1.0V, 2.0V, 3.0V...100.0V in total, and at the same time, these second reference voltages are respectively transmitted through Figure 1 The amplifier circuits on the upper middle side and in the middle amplify the signal by a specified multiple (the specified multiple may be 1) and are then received by the analog-to-digital converter and converted into a digital signal, namely, a third digital signal, which is then transmitted to the control module.

[0127] S312, determining a voltage fitting curve of the analog-to-digital converter according to the plurality of second reference voltages and the plurality of second digital signals.

[0128] For example, in Example AA, the control module can analyze and obtain the voltage fitting curve of the lower side analog-to-digital converter based on the aforementioned 100 second reference voltages and 100 digital signals respectively generated by the lower side analog-to-digital converter during the provision of the 100 first reference voltages.

[0129] S313, enabling the selection switch to connect the voltage detection terminal to the second input terminal to obtain a fourth digital signal output from the analog-to-digital converter.

[0130] For example, in the above example AA, after obtaining the voltage fitting curves of the lower analog-to-digital converter and the middle analog-to-digital converter, the selection switch connects the voltage detection terminal to the second input terminal. At this time, the operating voltages at both ends of the lower semiconductor device are respectively connected via Figure 1The lower-middle amplifier circuit amplifies the signal by a specified multiple (the specified multiple may be 1) and then receives the signal from the analog-to-digital converter. The analog-to-digital converter converts the received analog voltage signal into a digital signal, namely, a fourth digital signal, and transmits it to the control module.

[0131] S314, determining a second current operating voltage of the second semiconductor device according to the fourth digital signal and the second voltage fitting curve.

[0132] For example, in the aforementioned example AA, the control module can determine the current operating voltage of the lower semiconductor device based on the value of the fourth digital signal currently output by the lower analog-to-digital converter and the position of the value on the voltage fitting curve of the lower analog-to-digital converter.

[0133] In some embodiments, before step S314, the method further includes: enabling the corresponding voltage output circuit to output respective second initial voltages, where the second initial voltage is the rated operating voltage of the second semiconductor device corresponding to the voltage output circuit. Figure 1 The middle and lower voltage output circuit sends a control signal so that the lower voltage output circuit outputs an initial voltage of about 24 V. In this way, the second semiconductor device can be prevented from being damaged by an initial operating voltage that is too high, and the current actual operating voltage of the second semiconductor device can be quickly adjusted to the rated operating voltage.

[0134] S315 , adjusting the output voltage of the voltage output circuit according to the difference between the second current operating voltage and the rated operating voltage of the second semiconductor device.

[0135] For example, in the aforementioned example AA, when the control module learns that there is an unacceptable difference between the current operating voltage of the lower semiconductor device (the second semiconductor device) and its rated operating voltage (for example, the difference causes the semiconductor to operate in an unsatisfactory state, thereby affecting the detection result), it can send a control signal to the lower voltage output circuit to change the output voltage of the lower voltage output circuit, thereby making the difference between the current operating voltage of the lower semiconductor device and its rated operating voltage within the acceptable range.

[0136] In the above-mentioned embodiment BB, in the obtained Figure 1 After the voltage fitting curve of each analog-to-digital converter is obtained, it is not necessary to recalibrate the voltage fitting curve of these analog-to-digital converters using the above method, because the models of all the semiconductor devices to be tested corresponding to the same analog-to-digital converter during this period are usually consistent. For example, within the next 24 hours, Figure 1 The rated working voltage of all semiconductor devices to be tested on the transmission line corresponding to the voltage output circuit on the upper side is 30mV, which is the same as Figure 1The rated operating voltage of all semiconductor devices to be detected on the transmission line corresponding to the middle and lower voltage output circuit is 2.2V, so that the voltage fitting curves of each analog-to-digital converter previously obtained still match the semiconductor devices to be detected later. However, with the increase of continuous working time, the analog-to-digital converter will also have performance changes, and there may also be external factors that interfere with its working performance, which will cause the previously determined voltage fitting curve to be inconsistent with the current actual situation. For this, a threshold time can be set (for example, the threshold time is 24 hours). When the continuous working time of the analog-to-digital converter reaches 24 hours, the method of steps S301 to S314 is repeated. In addition, it can also be configured like this: each time the semiconductor detection equipment is turned on or restarted, or when the detection program installed on the equipment is re-run, the method of steps S301 to S314 is executed once.

[0137] An embodiment of the present application further provides a semiconductor testing device, which includes a housing and the above-mentioned semiconductor testing circuit housed in the housing.

[0138] An embodiment of the present application also provides a computer-readable storage medium storing program instructions. When the program instructions are executed by a computer (eg, a semiconductor detection device), the computer performs the semiconductor detection method described above.

Claims

1. A semiconductor detection circuit, characterized in that: include: A plurality of voltage output circuits, the plurality of voltage output circuits are connected to a plurality of semiconductor devices to be detected one by one, so as to provide working voltages for the plurality of semiconductor devices respectively, wherein each of the semiconductor devices is led out with a voltage detection terminal; A plurality of reference voltage sources, wherein the plurality of reference voltage sources have non-overlapping voltage output ranges and different voltage output precisions; Multiple analog-to-digital converters; A control module, wherein the control module is respectively connected to the plurality of reference voltage sources and each of the plurality of analog-to-digital converters, and the control module is configured to: According to the rated operating voltage of the semiconductor device, selecting the corresponding reference voltage source to be connected to the analog-to-digital converter to determine a voltage fitting curve of the analog-to-digital converter; The voltage detection terminal is connected to the analog-to-digital converter, and the output voltage of the voltage output circuit is adjusted according to the digital signal output by the analog-to-digital converter, the rated operating voltage of the semiconductor device and the voltage fitting curve.

2. The semiconductor detection circuit according to claim 1, characterized in that: The control module is configured to: Obtaining a rated operating voltage of each of the semiconductor devices to obtain a plurality of rated operating voltages; Determine the voltage range in which each of the multiple rated operating voltages is located, and thereby determine that P of the multiple rated operating voltages are within a first voltage range, and another Q of the multiple rated operating voltages are within a second voltage range, wherein the first voltage range is a voltage output range of a first reference voltage source among the multiple reference voltage sources, the second voltage range is a voltage output range of a second reference voltage source among the multiple reference voltage sources, the P semiconductor devices corresponding to the P rated operating voltages are first semiconductor devices, the Q semiconductor devices corresponding to the Q rated operating voltages are second semiconductor devices, and P and Q are positive integers; The first reference voltage source is connected to each analog-to-digital converter corresponding to all the first semiconductor devices, namely, the first analog-to-digital converter, respectively. The first reference voltage source is made to output a plurality of first reference voltages which are different from each other in time periods, and in this process, a first digital signal output by the first analog-to-digital converter in each time period is obtained to obtain a plurality of first digital signals. determining a first voltage fitting curve of the first analog-to-digital converter according to the plurality of first reference voltages and the plurality of first digital signals, connecting the voltage detection terminal of the first semiconductor device to the first analog-to-digital converter to obtain a second digital signal output by the first analog-to-digital converter, determining a first current operating voltage of the first semiconductor device according to the second digital signal and the first voltage fitting curve; adjusting an output voltage of a voltage output circuit corresponding to the first semiconductor device according to a difference between the first current operating voltage and a rated operating voltage of the first semiconductor device; The second reference voltage source is connected to each analog-to-digital converter corresponding to all the second semiconductor devices, namely, the second analog-to-digital converters. The second reference voltage source is made to output a plurality of second reference voltages which are different from each other in time periods, and in this process, a third digital signal output by the second analog-to-digital converter in each time period is obtained to obtain a plurality of third digital signals. determining a second voltage fitting curve of the second analog-to-digital converter according to the plurality of second reference voltages and the plurality of third digital signals, connecting the voltage detection terminal of the second semiconductor device to the second analog-to-digital converter to obtain a fourth digital signal output by the second analog-to-digital converter, determining a second current operating voltage of the second semiconductor device according to the fourth digital signal and the second voltage fitting curve, According to the difference between the second current operating voltage and the rated operating voltage of the second semiconductor device, the output voltage of the voltage output circuit corresponding to the second semiconductor device is adjusted.

3. The semiconductor detection circuit according to claim 2, characterized in that: Before the first reference voltage source is connected to each analog-to-digital converter corresponding to all the first semiconductor devices, namely, the first analog-to-digital converter, the control module is configured as follows: The voltage output circuit corresponding to the first semiconductor device is made to output a respective first initial voltage, where the first initial voltage is a rated operating voltage of the first semiconductor device corresponding to the voltage output circuit.

4. The semiconductor detection circuit according to claim 2 or 3, characterized in that: Before the second reference voltage source is connected to each analog-to-digital converter corresponding to all the second semiconductor devices, namely, the second analog-to-digital converters, the control module is configured as follows: The voltage output circuit corresponding to the second semiconductor device is made to output a respective second initial voltage, where the second initial voltage is a rated operating voltage of the second semiconductor device corresponding to the voltage output circuit.

5. A voltage correction method, applied to the semiconductor detection circuit according to any one of claims 1 to 4, characterized in that: The method comprises: According to the rated operating voltage of the semiconductor device, selecting the corresponding reference voltage source to be connected to the analog-to-digital converter to determine a voltage fitting curve of the analog-to-digital converter; The voltage detection terminal is connected to the analog-to-digital converter, and the output voltage of the voltage output circuit is adjusted according to the digital signal output by the analog-to-digital converter, the rated operating voltage of the semiconductor device and the voltage fitting curve.

6. The method according to claim 5, characterized in that The method comprises: Obtaining a rated operating voltage of each of the semiconductor devices to obtain a plurality of rated operating voltages; Determine the voltage range in which each of the multiple rated operating voltages is located, and thereby determine that P of the multiple rated operating voltages are within a first voltage range, and another Q of the multiple rated operating voltages are within a second voltage range, wherein the first voltage range is a voltage output range of a first reference voltage source among the multiple reference voltage sources, the second voltage range is a voltage output range of a second reference voltage source among the multiple reference voltage sources, the P semiconductor devices corresponding to the P rated operating voltages are first semiconductor devices, the Q semiconductor devices corresponding to the Q rated operating voltages are second semiconductor devices, and P and Q are positive integers; The first reference voltage source is connected to each analog-to-digital converter corresponding to all the first semiconductor devices, namely, the first analog-to-digital converter, respectively. The first reference voltage source is made to output a plurality of first reference voltages which are different from each other in time periods, and in this process, a first digital signal output by the first analog-to-digital converter in each time period is obtained to obtain a plurality of first digital signals. determining a first voltage fitting curve of the first analog-to-digital converter according to the plurality of first reference voltages and the plurality of first digital signals, connecting the voltage detection terminal of the first semiconductor device to the first analog-to-digital converter to obtain a second digital signal output by the first analog-to-digital converter, determining a first current operating voltage of the first semiconductor device according to the second digital signal and the first voltage fitting curve; adjusting an output voltage of a voltage output circuit corresponding to the first semiconductor device according to a difference between the first current operating voltage and a rated operating voltage of the first semiconductor device; The second reference voltage source is connected to each analog-to-digital converter corresponding to all the second semiconductor devices, namely, the second analog-to-digital converters. The second reference voltage source is made to output a plurality of second reference voltages which are different from each other in time periods, and in this process, a third digital signal output by the second analog-to-digital converter in each time period is obtained to obtain a plurality of third digital signals. determining a second voltage fitting curve of the second analog-to-digital converter according to the plurality of second reference voltages and the plurality of third digital signals, connecting the voltage detection terminal of the second semiconductor device to the second analog-to-digital converter to obtain a fourth digital signal output by the second analog-to-digital converter, determining a second current operating voltage of the second semiconductor device according to the fourth digital signal and the second voltage fitting curve, According to the difference between the second current operating voltage and the rated operating voltage of the second semiconductor device, the output voltage of the voltage output circuit corresponding to the second semiconductor device is adjusted.

7. The method according to claim 6, characterized in that Before connecting the first reference voltage source to each analog-to-digital converter corresponding to all the first semiconductor devices, namely, the first analog-to-digital converter, the method includes: The voltage output circuit corresponding to the first semiconductor device is made to output a respective first initial voltage, where the first initial voltage is a rated operating voltage of the first semiconductor device corresponding to the voltage output circuit.

8. The method according to claim 6 or 7, characterized in that: Before connecting the second reference voltage source to each analog-to-digital converter corresponding to all the second semiconductor devices, namely, the second analog-to-digital converters, the method includes: The voltage output circuit corresponding to the second semiconductor device is made to output a respective second initial voltage, where the second initial voltage is a rated operating voltage of the second semiconductor device corresponding to the voltage output circuit.

9. A semiconductor testing device, characterized in that: The method comprises the semiconductor detection circuit as claimed in any one of claims 1 to 4.

10. A computer-readable storage medium storing program instructions, characterized in that: When the program instructions are executed by a computer, the computer is caused to perform the method according to any one of claims 5 to 8.

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