Wafer high-efficiency cleaning equipment and process

Abstract

The application provides a wafer high-efficiency cleaning device and process, which comprises a cleaning platform, a cleaning pool is formed in the cleaning platform, a grabbing device for grabbing wafers is arranged in the cleaning pool, the grabbing device comprises oppositely arranged upper grabbing components and lower grabbing components, a protective cover is arranged outside the upper grabbing components, the protective cover comprises a protective main body and a protective end, the protective end extends towards the edge of the wafer, a protective chamber is formed between the protective main body and the upper grabbing components, and a gas pumping device is connected to the protective chamber through a communication joint. The application can simplify the wafer cleaning steps, improve the quality of the wafer surface after cleaning and improve the wafer cleaning efficiency.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer cleaning, in particular to a wafer efficient cleaning device and process. BACKGROUND

[0002] Both surfaces of the wafer need to be deeply cleaned to avoid the residue of particulate impurities, ensure the environment in the dust-free workshop and meet the needs of subsequent processing of the wafer.

[0003] In the traditional wafer cleaning process, the lower surface of the wafer needs to be fixed, and the upper surface is cleaned by a rolling brush or a centrifugal cleaning device. For centrifugal cleaning, the wafer needs to be rotated at high speed, and only one surface of the wafer can be cleaned at a time. After cleaning one surface, the wafer needs to be turned over to clean the other surface.

[0004] When cleaning the second surface of the wafer, the splashed cleaning liquid splashes onto the first surface of the wafer that has already been cleaned. Some cleaning devices introduce a wind circulation system to form a directional air flow in the cleaning device, which can guide the splashed liquid. However, the effect of the circulating air is still limited, affecting the cleaning quality of the wafer surface. SUMMARY

[0005] To solve the above problems, the present application provides a wafer efficient cleaning device and process, which can simplify the wafer cleaning steps, improve the quality of the wafer surface after cleaning and improve the efficiency of wafer cleaning.

[0006] To solve the above problems, the technical solution adopted by the present application is as follows:

[0007] A wafer efficient cleaning device, comprising a cleaning platform, a cleaning pool is formed inside the cleaning platform, a grabbing device for grabbing wafers is arranged inside the cleaning pool, the grabbing device comprises an upper grabbing assembly and a lower grabbing assembly arranged oppositely, a protective cover is sleeved outside the upper grabbing assembly, the protective cover comprises a protective main body and a protective end, the protective end extends towards the edge of the wafer, a protective chamber is formed between the protective main body and the upper grabbing assembly, and a gas pumping device is connected to the protective chamber through a communication joint; wherein the upper grabbing assembly grabs the upper end of the wafer, and the gas pumping device continuously pumps gas to maintain a high pressure state in the protective chamber.

[0008] Compared with the traditional wafer cleaning method, the wafer is cleaned by the cleaning device, which can simplify the wafer cleaning steps and improve the efficiency of wafer cleaning. At the same time, the protective structure is formed on the surface of the wafer that has been cleaned by the design of the protective cover and other structures, effectively avoiding the splashed cleaning liquid and effectively ensuring the quality of the two surfaces of the cleaned wafer.

[0009] Preferably, the upper grabbing assembly comprises an upper grabbing base and an upper grabbing end, a first telescopic assembly is arranged between the upper grabbing base and the upper grabbing end, and a negative pressure grabbing block is arranged at the bottom of the upper grabbing end.

[0010] Preferably, the negative pressure grabbing block comprises a grabbing block one and a grabbing block two, a containing groove is formed at the bottom of the upper grabbing end, and a second telescopic assembly for controlling the movement of the grabbing block two is arranged inside the containing groove.

[0011] In the above manner, the different areas of the wafer surface can be effectively clamped, and dry gas can be pumped into the protective cover at the same time during clamping, so that the surface that has been cleaned on the side of the protective cover can be dried. At this time, the lower surface of the wafer is cleaned while the upper surface of the wafer is dried, further shortening the time of wafer cleaning and drying, and further improving the efficiency of wafer cleaning.

[0012] Preferably, the grabbing block one is annularly arranged in multiple, and a gap for passing dry gas is formed between two adjacent grabbing block ones.

[0013] Through the above structural design, a single hot air source can be designed to dry the wafer surface in all directions, ensuring stable clamping of the wafer while accelerating the drying efficiency of the upper surface of the wafer.

[0014] Preferably, the first telescopic assembly comprises a telescopic sleeve and a telescopic rod that slide relative to each other, and further comprises an electric control assembly for controlling the rotation of the telescopic rod.

[0015] Preferably, the surface of the cleaning platform is further provided with a position control device, and the position control device is used to control the movement of the upper grabbing assembly to be staggered with the lower grabbing assembly.

[0016] Preferably, the position control device comprises two sets of electric guide rails and two electric sliding blocks, and the electric sliding blocks are connected to the upper grabbing assembly through connecting workpieces.

[0017] Preferably, a cleaning device for spraying cleaning liquid is installed in the cleaning pool, and the cleaning device is located between the upper grabbing assembly and the lower grabbing assembly.

[0018] Preferably, the cleaning device comprises a cleaning arm, a plurality of cleaning holes are formed at the upper and lower ends of the cleaning arm, and a distribution device and a swing arm device are further arranged on the outer side of the cleaning arm.

[0019] A wafer efficient cleaning process using the above-mentioned wafer efficient cleaning device, comprising the following steps: S1, grabbing the wafer by the lower grabbing assembly to complete the cleaning of the upper surface of the wafer; S2, grabbing the wafer by the upper grabbing assembly, and controlling the gas pumping device to continuously pump gas to maintain a high pressure state in the protective chamber, to complete the cleaning of the lower surface of the wafer.

[0020] The beneficial effects of the present application are:

[0021] Compared with the traditional wafer cleaning method, the wafer is cleaned by the cleaning equipment, the wafer cleaning steps can be simplified, and the wafer cleaning efficiency is improved; at the same time, the protective structure can be formed on the surface of the wafer which has been cleaned through the design of the protective cover and other structures, which effectively avoids the splashing of the cleaning liquid, and effectively ensures the quality of the two side surfaces of the cleaned wafer. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 It is a schematic diagram of the three-dimensional structure of the present application.

[0023] Figure 2 It is a schematic diagram of the wafer upper surface cleaning state of the present application.

[0024] Figure 3 It is a schematic diagram of the wafer lower surface cleaning state of the present application.

[0025] Figure 4 It is a schematic diagram of the three-dimensional structure of the upper grabbing assembly and the protective cover of the present application.

[0026] Figure 5 It is an exploded structural schematic diagram of the upper grabbing assembly and the protective cover of the present application.

[0027] Figure 6 It is a schematic diagram of the internal structure of the upper grabbing assembly and the protective cover of the present application.

[0028] Figure 7 It is a schematic diagram of the three-dimensional structure of the upper grabbing assembly of the present application.

[0029] Figure 8 It is a schematic diagram of the internal structure of the upper grabbing assembly of the present application.

[0030] Figure 9 It is a schematic diagram of the bottom structure of the upper grabbing assembly of the present application.

[0031] Figure 10 It is a schematic diagram of the cleaning device structure of the present application.

[0032] In the figure: 100, cleaning platform; 110, cleaning pool; 200, grabbing device; 210, lower grabbing assembly; 220, upper grabbing assembly; 221, upper grabbing end; 2211, second telescopic assembly; 2212, containing groove; 222, upper grabbing base; 2221, telescopic sleeve; 2222, telescopic rod; 2223, electric control assembly; 223, negative pressure grabbing block; 2231, grabbing block one; 2232, grabbing block two; 2233, notch; 300, wafer; 400, cleaning device; 410, cleaning arm; 411, cleaning hole; 420, distribution device; 430, swing arm device; 500, protective cover; 510, protective main body; 520, protective end; 530, communication joint; 600, position control device; 610, electric guide rail; 620, electric sliding block; 630, connecting workpiece. DETAILED DESCRIPTION

[0033] The application will be further described below in conjunction with the drawings and examples.

[0034] The wafer is an important semiconductor material, and its production process needs to go through multiple cleaning, etching and other processing steps.

[0035] Both surfaces of the wafer need to be deeply cleaned to avoid the residue of particulate impurities, ensure the environment in the dust-free workshop and meet the needs of subsequent processing of the wafer.

[0036] In the traditional wafer cleaning process, the lower surface of the wafer needs to be fixed, and the upper surface is cleaned by a rolling brush or a centrifugal cleaning device. For centrifugal cleaning, the wafer needs to be controlled to rotate at high speed, and only one surface of the wafer can be cleaned at a time. After cleaning one surface, the wafer needs to be turned over to achieve double-sided cleaning.

[0037] When cleaning the second surface of the wafer, the splashed cleaning part is splashed to the first surface side of the wafer which has been cleaned. Some cleaning devices introduce a wind circulation system to form a directional air flow in the cleaning device, which can guide the splashed liquid. However, the effect of the circulating air is still limited, which affects the cleaning quality of the wafer surface.

[0038] To solve the above problems, refer to the accompanying Figure 1 -Appendix Figure 10The utility model provides a kind of wafer high-efficiency cleaning equipment, including cleaning platform 100, cleaning pool 110 is formed in cleaning platform 100 inside, and the inside of cleaning pool 110 is provided with gripping device 200 for grabbing wafer 300, gripping device 200 includes oppositely arranged upper gripping assembly 220 and lower gripping assembly 210, and lower gripping assembly 210 and upper gripping assembly 220 are located on both sides and carry out negative pressure gripping to the lower surface and upper surface of wafer 300 respectively, compared with the cleaning mode of traditional wafer 300 is turned over, operation step is simplified, and the side cleaned completely is located in upper simultaneously, effectively avoid the liquid splashed in second cleaning process, effectively ensure the quality of wafer 300 surface cleaning.

[0039] Protective cover 500 is sleeved outside upper gripping assembly 220, and protective cover 500 includes protective main body 510 and protective end 520, and protective end 520 extends towards wafer 300 edge, and protective chamber is formed between protective main body 510 and upper gripping assembly 220, and the protective chamber is connected with gas pumping equipment through communicating joint 530;Wherein, wafer 300 upper end is grabbed by upper gripping assembly 220, and high-pressure state in protective chamber is maintained by continuously pumping gas by gas pumping equipment after wafer 300 upper end is grabbed, and there is predetermined gap between the bottom protective end 520 of protective cover 500 and wafer 300, and high-pressure gas can pass through the predetermined gap and go out, and gas is continuously pumped into the protective chamber in this process, and the high-pressure state in the protective chamber is maintained, liquid splashing into the protective chamber can be effectively avoided, and the quality of wafer cleaning is further ensured.

[0040] It should be noted here that protective end 520 is circular, and predetermined annular gap is formed between protective end 520 and wafer 300 after wafer 300 is grabbed by upper gripping assembly 220, and gas is continuously discharged from annular gap, and continuous outward airflow effectively avoids that cleaning liquid enters, and protective cover 500 as a whole can play a protective role, and the quality of wafer cleaning is ensured.

[0041] In conclusion, compared with the traditional wafer cleaning mode, wafer 300 is cleaned by the cleaning equipment, and wafer 300 cleaning steps can be simplified, and the efficiency of wafer cleaning is improved;And by the design of protective cover 500 and other structures, protective structure can be formed on the surface of wafer 300 already cleaned, and splashed cleaning liquid is effectively avoided, and the quality of both sides of wafer after cleaning is effectively ensured.

[0042] Specifically, the upper grabbing assembly 220 comprises an upper grabbing base 222 and an upper grabbing end 221, a first telescopic assembly is arranged between the upper grabbing base 222 and the upper grabbing end 221, a negative pressure grabbing block 223 is arranged at the bottom of the upper grabbing end 221, the negative pressure grabbing block 223 is externally connected with a negative pressure device, the negative pressure device can grab the wafer 300 by negative pressure, the vertical height of the negative pressure grabbing block 223 can be adjusted through the first telescopic assembly, thereby the distance between the wafer 300 and the protective cover 500 is adjusted, the size of the gap between the wafer 300 and the protective cover 500 is adjusted, and the adjustment requirement is met.

[0043] Further, the negative pressure grabbing block 223 comprises a grabbing block one 2231 and a grabbing block two 2232, a containing groove 2212 is opened at the bottom of the upper grabbing end 221, a second telescopic assembly 2211 for controlling the movement of the grabbing block two 2232 is arranged inside the containing groove 2212, the second telescopic assembly 2211 can control the grabbing block two 2232 to telescopically enter the containing groove 2212, and through the above-mentioned manner, the wafer 300 can be effectively clamped in different areas on the surface, dry gas can be pumped into the protective cover 500 at the same time in the clamping process, the surface that has been cleaned on the side of the protective cover 500 can be dried, at this time, the lower surface of the wafer 300 is cleaned while the upper surface of the wafer 300 is dried, the cleaning and drying time of the wafer 300 is further shortened, and the cleaning efficiency of the wafer 300 is further improved.

[0044] Further, the grabbing block one 2231 is annularly arranged in a plurality of forms, an opening 2233 for dry gas to pass through is opened between two adjacent grabbing block ones 2231, the opening 2233 can allow dry hot air to pass through, so that the dry gas can clean the upper surface of the wafer 300 in all directions without dead angle; through the above-mentioned structural design, a single hot air source can be designed to dry the surface of the wafer 300 in all directions, the wafer 300 is stably clamped while the drying efficiency of the upper surface of the wafer 300 is accelerated.

[0045] Specific reference is made to the accompanying drawings Figure 8 Specifically, the first telescopic assembly comprises a telescopic sleeve 2221 and a telescopic rod 2222 that slide relative to each other, further comprises an electric control assembly 2223 for controlling the rotation of the telescopic rod 2222, the telescopic rod 2222 and the telescopic sleeve 2221 can synchronously rotate while being capable of telescopic control, the telescopic control between the two can be selected from existing modes such as electric control, hydraulic control and pneumatic control; at the same time, the rotation of the telescopic sleeve 2221 is controlled by the electric control assembly 2223 driven by the telescopic rod 2222, the rotating power can be transmitted to one side of the bottom of the upper grabbing end 221, thereby the wafer 300 is controlled to rotate at high speed in the process of grabbing the wafer 300 by the upper grabbing assembly 220, the centrifugal cleaning of the lower surface of the wafer 300 is realized, and the cleaning effect of the surfaces on both sides of the wafer 300 is ensured.

[0046] The position control device 600 is arranged on the surface of the cleaning platform 100, and is used to control the upper grabbing assembly 220 to move out of phase with the lower grabbing assembly 210. During the process of grabbing and unloading the wafers 300, the position control device 600 is used to control the upper grabbing assembly 220 to move outward, so that the upper grabbing assembly 220 is away from the side of the lower grabbing assembly 210, thereby facilitating the external robot to grab and unload the wafers 300.

[0047] Preferably, the position control device 600 includes two sets of electric guide rails 610 and two electric sliding blocks 620. The electric sliding blocks 620 are connected with the upper grabbing assembly 220 through connecting workpieces 630. The upper grabbing assembly 220 is in a relatively stable state limited by the connecting workpieces 630 on both sides. The electric guide rails 610 and the electric sliding blocks 620 are used to control the linear movement of the upper grabbing assembly 220 on the horizontal plane, thereby achieving driving control.

[0048] It should be noted that a lifting structure can be arranged in the connecting workpiece 630, so as to control the upper grabbing assembly 220 to move towards the lower grabbing assembly 210, and then control the upper grabbing assembly 220 to contact the upper end of the wafer 300, thereby achieving negative pressure grabbing of the upper surface of the wafer 300. Similarly, the telescopic structure in the upper grabbing assembly 220 can be used to control the negative pressure grabbing block 223 at the bottom to perform negative pressure grabbing on the upper surface of the wafer 300.

[0049] The cleaning device 400 for spraying cleaning liquid is arranged in the cleaning tank 110. The cleaning device 400 is located between the upper grabbing assembly 220 and the lower grabbing assembly 210. The cleaning device 400 can continuously spray cleaning liquid in a predetermined direction. The cleaning liquid is sprayed on the upper surface and the lower surface of the wafer 300 in sequence, thereby achieving adaptive cleaning of the two surfaces of the wafer 300.

[0050] Preferably, the cleaning device 400 includes a cleaning arm 410. A plurality of cleaning holes 411 are arranged on the upper and lower ends of the cleaning arm 410. The cleaning arm 410 is provided with a distribution device 420 and a swing arm device 430 on the outer side. The swing arm device 430 is used to control the cleaning arm 410 to swing along a predetermined arc-shaped path, so that the cleaning liquid can be uniformly sprayed on the surface of the wafer 300. The distribution device 420 is used to control the cleaning liquid to be sprayed out of the cleaning holes 411 on one side, thereby achieving one-sided spraying of the cleaning liquid, so as to meet the cleaning requirements of different surfaces of the wafer 300 located on different sides.

[0051] The swing arm device 430 can be electrically controlled. The swing arm device 430 is used to control the cleaning arm 410 to swing repeatedly along the arc-shaped path. The distribution device 420 can be a pumping pipeline with an internal valve. The opening and closing of the valve are alternately controlled, thereby achieving directional spraying of the cleaning liquid.

[0052] A wafer high-efficiency cleaning process using the wafer high-efficiency cleaning device, comprising the following steps:

[0053] S1, using the lower grabbing assembly 210 to grab the wafer 300, completing the cleaning of the upper surface of the wafer 300;

[0054] S2, using the upper grabbing assembly 220 to grab the wafer 300, and controlling the gas pumping device to continuously pump the gas to maintain the high-pressure state in the protection chamber, completing the cleaning of the lower surface of the wafer 300.

[0055] In the above manner, the wafer 300 can be quickly grabbed without the mechanical hand, the upper grabbing assembly 220 and the lower grabbing assembly 210 can be controlled to rotate at the same speed, the wafer 300 can be grabbed under negative pressure during high-speed rotation, and the efficiency of grabbing the wafer 300 is further improved; at the same time, the upper surface of the wafer 300 can be protected by the protection cover 500 during the cleaning of the lower surface of the wafer 300, the splashed cleaning liquid is prevented from entering the protection chamber, the cleaning of the upper surface of the wafer 300 is ensured, the overall surface quality of the wafer 300 is ensured, and the cleaning efficiency of the wafer 300 is improved.

[0056] The above only describes the preferred embodiments of the present application and is not used to limit the present application, any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A wafer high-efficiency cleaning device, comprising a cleaning platform (100), a cleaning pool (110) is formed inside the cleaning platform (100), a grabbing device (200) for grabbing a wafer (300) is arranged inside the cleaning pool (110), characterized in that: the grabbing device (200) comprises oppositely arranged upper grabbing assembly (220) and lower grabbing assembly (210), the outer side of the upper grabbing assembly (220) is sleeved with a protective cover (500), the protective cover (500) comprises a protective main body (510) and a protective end (520), the protective end (520) extends towards the edge of the wafer (300), the protective main body (510) and the upper grabbing assembly (220) form a protection chamber, and the protection chamber is connected with a gas pumping device through a communication joint (530); wherein the upper grabbing assembly (220) grabs the upper end of the wafer (300), and the gas pumping device continuously pumps gas to maintain a high pressure state in the protection chamber; the protective end is circular, a predetermined annular gap is formed between the protective end and the wafer after the upper grabbing assembly grabs the wafer, and the gas is continuously discharged from the annular gap, and the continuous outward airflow avoids the entry of cleaning liquid. the upper grabbing assembly (220) comprises an upper grabbing base (222) and an upper grabbing end (221), a first telescopic assembly is arranged between the upper grabbing base (222) and the upper grabbing end (221), and a negative pressure grabbing block (223) is arranged at the bottom of the upper grabbing end (221).

2. The wafer high-efficiency cleaning device according to claim 1, wherein, the negative pressure grabbing block (223) comprises a grabbing block one (2231) and a grabbing block two (2232), a containing groove (2212) is opened at the bottom of the upper grabbing end (221), and a second telescopic assembly (2211) for controlling the movement of the grabbing block two (2232) is arranged inside the containing groove (2212).

3. The wafer high-efficiency cleaning device according to claim 2, wherein, a plurality of the grabbing block one (2231) are arranged in a ring shape, and a gap (2233) for passing dry gas is opened between two adjacent grabbing block one (2231).

4. The wafer high-efficiency cleaning device according to claim 3, wherein, the first telescopic assembly comprises a telescopic sleeve (2221) and a telescopic rod (2222) that slide relative to each other, and further comprises an electric control assembly (2223) for controlling the rotation of the telescopic rod (2222).

5. The wafer high efficiency cleaning apparatus according to claim 2, wherein a position control device (600) is further arranged on the surface of the cleaning platform (100), the upper grabbing assembly (220) is controlled to move and be staggered with the lower grabbing assembly (210) through the position control device (600).

6. The wafer high efficiency cleaning apparatus according to claim 1, wherein the position control device (600) comprises two groups of electric guide rails (610) and two electric sliding blocks (620), and the electric sliding blocks (620) are connected with the upper grabbing assembly (220) through connecting workpieces (630).

7. The wafer high-efficiency cleaning device according to claim 6, wherein, a cleaning device (400) for spraying cleaning liquid is installed in the cleaning pool (110), and the cleaning device (400) is located between the upper grabbing assembly (220) and the lower grabbing assembly (210).

8. The wafer high efficiency cleaning apparatus according to claim 1, wherein, ​ 9. The wafer high-efficiency cleaning device according to claim 8, wherein, The cleaning device (400) comprises a cleaning arm (410), a plurality of cleaning holes (411) are formed on both ends of the cleaning arm (410), and a distribution device (420) and a swing arm device (430) are further arranged on the outer side of the cleaning arm (410).

10. A high efficiency wafer cleaning process, characterized in that, The wafer high-efficiency cleaning device of any one of claims 1-9 comprises the following steps: S1, the wafer (300) is gripped by the lower gripping assembly (210), and the upper surface of the wafer (300) is cleaned; S2, the wafer (300) is gripped by the upper gripping assembly (220), and the gas pumping device is controlled to continuously pump gas to maintain the high-pressure state in the protection chamber, and the lower surface of the wafer (300) is cleaned.

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