Thyristor test platform and method for double-direction coupling characteristics of electric heating under heavy frequency working mode

Abstract

The application discloses a kind of heavy frequency operating mode thyristor electric heat bidirectional coupling characteristic test platform and method, purpose is to solve the problem of prior art cannot test thyristor electric heat bidirectional coupling characteristic and high time cost problem.The test platform of the present application is composed of main circuit unit, trigger unit, non-contact temperature measurement unit;Non-contact temperature measurement unit is composed of online infrared thermometer, computer: computer is equipped with thermal imaging software and semiconductor device simulation software.Test method is to carry out heavy frequency operating mode thyristor temperature rise experiment on test platform, obtain heavy frequency operating mode thyristor quasi-steady-state junction temperature T sj With time t variation curve T sj (t);The device simulator of semiconductor device simulation software establishes SCR-circuit hybrid simulation model;Based on T sj (t) and SCR-circuit hybrid simulation model, device simulator tests heavy frequency operating mode thyristor electric parameter and junction temperature T j The present application can improve test accuracy and reduce time cost.

Description

Technical Field

[0001] This invention belongs to the field of power electronic device testing, and in particular relates to a test platform and method for the bidirectional electrothermal coupling characteristics of thyristors operating in high repetition rate mode. Background Technology

[0002] A thyristor is a controllable semiconductor switching device with a four-layer (P1, N1, P2, N2) triple-junction (J1, J2, J3) structure. As a high-power semiconductor device, the thyristor features high voltage withstand capability, high current carrying capacity, and low power loss, and is widely used in power systems, pulse power applications, electric furnaces, and the automotive industry. In these applications, thyristors operating in high-repetition-rate (PRR) mode continuously generate power losses, which in turn generate heat, causing the thyristor junction temperature to rise continuously. Excessive junction temperature can lead to thyristor failure, severely affecting the reliable operation of devices such as converter valves, pulse drive sources, and electric furnaces. The thyristor junction temperature affects electrical parameters such as voltage drop and current, and changes in these parameters, in turn, affect heat generation, further impacting the junction temperature. This process reflects a bidirectional coupling relationship between electrical parameters and junction temperature. Testing the bidirectional electrothermal coupling characteristics of thyristors operating in high-repetition-rate mode is crucial for estimating the reliability of thyristor-based applications.

[0003] Currently, there are experimental and simulation methods for testing the electrothermal characteristics of thyristors. Experimental methods include infrared imaging, fiber Bragg grating, and temperature-sensitive electrical parameter methods. However, these methods struggle to measure the temperature change of a thyristor under a single pulse, thus hindering the testing of the thyristor's bidirectional electrothermal coupling characteristics. Simulation methods include thermal impedance network methods, finite element methods based on thermal conduction, and finite element methods based on semiconductor device physics. The thermal impedance network method transforms the thermal circuit model into a circuit model, analogizing power consumption to a current source. Circuit simulation is performed on the Cauer or Foster thermal impedance model, with node voltage representing junction temperature. For example, a patent titled "Real-time Online Simulation System and Method for Power Semiconductor Device Loss and Temperature (Publication No.: CN110032086A)" reports a real-time online simulation system for power semiconductor device loss and temperature based on a thermal impedance model. This simulation system can only calculate junction temperature from power consumption, but junction temperature cannot affect power consumption, thus exhibiting unidirectional electrothermal coupling. A patent titled "A Method for Establishing a High-Voltage High-Power Thyristor Electrothermal Model (Publication No.: CN101587507A)" reports a thyristor electrothermal simulation method based on a Foster network thermal impedance model. This method can also only achieve unidirectional electrothermal coupling and cannot test bidirectional electrothermal coupling characteristics. The finite element method based on heat conduction couples electromagnetic loss with temperature. For example, a patent titled "IGBT Package Module Electrothermal Bidirectional Coupling Simulation Method, Device, Electronic Device, and Storage Medium (Publication No.: CN116451632A)" reports a method for simulating the electrothermal bidirectional coupling of IGBT package modules. However, this method suffers from the problem that electromagnetic loss is generated by an artificially applied excitation signal, without involving the physical processes of semiconductor device switching on and off, and therefore cannot accurately simulate temperature changes. The finite element method based on semiconductor physics uses TCAD software to achieve device-circuit hybrid simulation by solving semiconductor physics equations and circuit equations. This method not only achieves electrothermal bidirectional coupling but also reflects actual operating conditions with high accuracy. However, this method is generally only used for electrothermal bidirectional coupling testing of thyristors in single-pulse operating mode. For thyristors in repetition frequency operating mode, the number of simulations is limited by the total number of pulses N in the repetition frequency operating mode. f Because of the same limitations, this method has a long computation time and high computational cost, making it unsuitable for applications with high real-time requirements.

[0004] Therefore, for thyristors operating in high repetition rate mode, how to achieve electrothermal bidirectional coupling testing with both high accuracy and low computation time cost remains a technical problem of great concern to those skilled in the art. Summary of the Invention

[0005] The technical problem to be solved by this invention is that existing testing methods cannot test the electrothermal bidirectional coupling characteristics of thyristors and simulation testing methods have high time costs. This invention provides a testing platform and method for testing the electrothermal bidirectional coupling characteristics of thyristors in repetition frequency operating mode, which has the characteristics of high testing accuracy and low testing time cost.

[0006] The technical solution of this invention is:

[0007] This invention discloses a thyristor electrothermal bidirectional coupling characteristic testing platform in high repetition rate mode, comprising a main circuit unit, a trigger unit, and a non-contact temperature measurement unit. The main circuit unit is connected to the anode and cathode of the thyristor under test (SCR), providing the SCR with operating voltage and adjustable waveform conduction current. The trigger unit is connected to the gate and cathode of the SCR, used to trigger the SCR to conduct. The non-contact temperature measurement unit is placed beside the SCR and used to measure the external cathode temperature of the SCR in real time.

[0008] The main circuit unit consists of a high-voltage DC power supply, an energy storage capacitor C1, a load inductor L1, a load resistor R1, and a protection diode D1.

[0009] The high-voltage DC power supply adopts a fully digital high-voltage DC power supply with an output DC voltage range of 0 to 5kV. Within this range, the output voltage is continuously adjustable and is used to provide power to the energy storage capacitor C1. The positive and negative terminals of the high-voltage DC power supply are connected to the two ends of the energy storage capacitor C1, respectively.

[0010] The energy storage capacitor C1 is composed of multiple capacitors connected in parallel. The maximum operating voltage of the energy storage capacitor C1 is 8kV, and the total capacitance range is 1μF~50μF. It is used to store electrical energy. One end of the energy storage capacitor C1 is connected to the positive terminal of the high voltage DC power supply, the anode of the thyristor SCR under test, and the cathode of the protection diode D1. The other end is connected to one end of the load inductor L1 and the negative terminal of the high voltage DC power supply.

[0011] The load inductor L1 is a copper wire-wound inductor with a power greater than 100W and an inductance value range of 0μH to 10μH. It is used to adjust the waveform of the conduction current flowing through the thyristor SCR under test. One end of the load inductor L1 is connected to one end of the energy storage capacitor C1, and the other end is connected to one end of the load resistor R1.

[0012] The load resistor R1 is a ceramic tube wire-wound resistor with a power greater than 100W and a resistance value range of 0 to 10Ω. It is used to adjust the waveform of the conduction current flowing through the thyristor SCR under test. One end of the load resistor R1 is connected to one end of the inductor L1, and the other end is connected to the cathode of the thyristor SCR under test, the anode of the protection diode D1, and ground.

[0013] The protection diode D1 is a high-power rectifier diode with a reverse voltage peak of 6.5kV and a forward average current of 1kA. It is used to protect the thyristor SCR under test. Its cathode is connected to one end of the energy storage capacitor C1 and the anode of the thyristor SCR under test. Its anode is connected to one end of the load resistor R1, the cathode of the thyristor SCR under test, and ground.

[0014] The triggering unit consists of a triggering module and a triggering control module:

[0015] The trigger module adopts a strong trigger circuit with a peak output voltage of 15V and an output voltage rise rate range of 2.5~15V / μs. Its output terminal is connected to the gate and cathode of the thyristor SCR under test.

[0016] The trigger control module uses a fiber optic trigger controller, which can output optical trigger signals. Its output terminal is connected to the input terminal of the trigger module.

[0017] The non-contact temperature measurement unit consists of one online infrared thermometer and one computer.

[0018] The online infrared thermometer uses the Optris CT 4M model online infrared thermometer, with a temperature range of 0℃~500℃, a spectral range of 2.2μm~6.0μm, and a response time of 1ms. It is used to measure the external cathode temperature of the SCR thyristor under test in real time, and its output terminal is connected to the computer I / O interface.

[0019] The computer is equipped with thermal imaging software and semiconductor device simulation software. The thermal imaging software (such as CompactPlusConnect (version 1.5.23 and above) is used to record and display the real-time temperature measured by the linear infrared thermometer, and the semiconductor device simulation software (such as Silvaco TCAD (version 2019 and above)) is used to simulate the bidirectional electrothermal coupling characteristics of the thyristor under test.

[0020] The present invention provides a method for testing the electrothermal bidirectional coupling characteristics of a thyristor in high-repetition-rate operating mode, comprising the following steps:

[0021] The first step involved conducting a temperature rise experiment on a thyristor operating in repetition-frequency mode on a thyristor electrothermal bidirectional coupling characteristic test platform to obtain the quasi-steady-state junction temperature T of the thyristor operating in repetition-frequency mode. sj Curve of change of T with time t sj (t), the method is:

[0022] Step 1.1: Set the output voltage of the high voltage DC power supply of the thyristor electrothermal bidirectional coupling characteristic test platform in repetition frequency working mode to U0 (0.1~5kV) and the output current to I0 (1~4000mA);

[0023] Step 1.2: The trigger control module of the thyristor electrothermal bidirectional coupling characteristic test platform in repetition frequency mode controls the trigger module to work, triggering the thyristor SCR under test, causing the energy storage capacitor C1 of the main circuit unit to charge and discharge at a frequency f (1~50Hz), and the total test time is t. s (≥1s);

[0024] Step 1.3: The online infrared thermometer of the non-contact temperature measurement unit measures the external cathode temperature of the SCR under test, and the computer records and displays the change of the external cathode temperature of the SCR under test over time. Since the response time of the online infrared thermometer is much longer than the single working time of the SCR under test, the measured external cathode temperature of the SCR under test is the quasi-steady-state junction temperature of the thyristor during the working interval. Therefore, the curve T of the quasi-steady-state junction temperature of the thyristor in the repetition frequency mode over time can be obtained. sj (t).

[0025] The second step involves establishing a hybrid simulation model of the SCR-circuit in the main circuit unit structure and the SCR under test within the thyristor electrothermal bidirectional coupling characteristic test platform based on the repetition frequency operating mode, using a device simulator in semiconductor device simulation software. The method is as follows:

[0026] Step 2.1: Based on the dimensional parameters of the thyristor SCR under test, establish the model of the thyristor SCR under test and initialize the mesh using the device simulator in the semiconductor device simulation software;

[0027] Step 2.2: Based on the material of the thyristor SCR under test, define the region material using the device simulator in the semiconductor device simulation software. The materials of the thyristor SCR model under test are silicon and silicon dioxide.

[0028] Step 2.3: Based on the electrode parameters (anode, cathode, amplification gate, and gate) of the thyristor SCR under test, define the electrodes using the device simulator in the semiconductor device simulation software. The electrodes of the thyristor SCR model under test are anode, cathode, amplification gate, and gate.

[0029] Step 2.4: Based on the doping parameters (doping of P1, N1, P2, N2) of the SCR under test, define the four-layer (P1, N1, P2, N2) structure doping of the SCR under test model using the device simulator in the semiconductor device simulation software.

[0030] Step 2.5: Use the device simulator in the semiconductor device simulation software to select a physical model, including mobility model, recombination model, collisional ionization model, band narrowing model, and lattice heating model;

[0031] Step 2.6: Based on the main circuit unit structure of the thyristor electrothermal bidirectional coupling characteristic test platform in the repetition frequency operating mode, the netlist state of the actual circuit of the thyristor SCR under test is defined using the device simulator of the semiconductor device simulation software. A hybrid simulation model of the thyristor SCR under test and the circuit is established, which includes circuit components and circuit topology. The circuit components include the thyristor SCR model under test, energy storage capacitor C1, load inductor L1, load resistor R1, and protection diode D1. The circuit topology is that the thyristor SCR model under test, C1, L1, and load resistor R1 are connected in series, and D1 is connected in reverse parallel between the anode and cathode of the thyristor SCR model under test.

[0032] The third step is to determine the quasi-steady-state junction temperature T of the thyristor in the repetition rate operating mode obtained in step 1.3. sj Curve T of change over time sj (t) and the hybrid simulation model of the SCR-circuit under test obtained in step 2.6 are used to set global temperature parameters through the device simulator of semiconductor device simulation software, and the electrical parameters and junction temperature T of the thyristor in repetition rate mode are tested. j The method is:

[0033] Step 3.1, based on the quasi-steady-state junction temperature T of the thyristor obtained in step 1.3 sj Curve of change of T with time t sj (t), to obtain the total number of pulses N in the repetition frequency operating mode. f N f =f×t s f is the charging and discharging frequency of the energy storage capacitor C1 in the main circuit unit of the thyristor electrothermal bidirectional coupling characteristic test platform in repetition mode, and t is the charging and discharging frequency of the capacitor C1. s This is the total test time, the test order is n, and the initial order is denoted as n=0;

[0034] Step 3.2, set the global temperature T = T sj (t0), where T sj (t0) indicates that at time T sj (t) is the ordinate of the curve at t = t0, where t0 = nΔt, and Δt is the ordinate of T. sj The time interval (t) is given by Δt = N. f / (N×f), where N is a manually set number of times, its function is to reduce T sj (t) Divide the time t on the horizontal axis into N parts with a time interval of Δt. Substitute t0 = 0, ..., nΔt, ..., NΔt into T respectively. sj In (t), N+1 global temperatures T are obtained, and the criterion for setting N is T. sj ((n+1)Δt)-T sj(nΔt)≥1℃, meaning the difference between adjacent global temperatures T is greater than or equal to 1℃. This is because when the difference between adjacent global temperatures T is less than 1℃, the difference in test results using semiconductor device simulation software is very small and can be ignored. To reduce test time costs, the difference between adjacent global temperatures T is required to be greater than or equal to 1℃.

[0035] Step 3.3: Based on the hybrid simulation model of the SCR-circuit under test obtained in Step 2.6, start the device simulator of the semiconductor device simulation software, and obtain the global temperature T = T through test calculations. sj Electrical parameters and junction temperature of the tested SCR thyristor at (t0) The electrical parameters of the thyristor SCR under test include the SCR anode current. and voltage drop

[0036] Step 3.4, let n = n+1. If n ≤ N, go to step 3.1; if n > N, then we have obtained the test results of the thyristor electrothermal bidirectional coupling characteristics for three sets of N+1 repetition frequency operating modes, that is, the anode current of the N+1 tested thyristors SCR. The voltage drop of N+1 tested thyristors SCR is The junction temperature of the N+1 tested SCR thyristors is...

[0037] The following technical effects can be achieved by using this invention:

[0038] (1) This invention improves the accuracy of testing the electrothermal bidirectional coupling characteristics of thyristors operating in high-repetition-rate mode. In the background technology, the finite element method based on TCAD achieves device-circuit hybrid simulation by solving semiconductor physical equations and circuit equations. In step 2.5, the semiconductor physical model sets temperature-related mobility models, recombination models, and lattice heating models to achieve electrothermal bidirectional coupling characteristic testing. Compared to the IGBT package module electrothermal bidirectional coupling simulation method reported in the patent titled "IGBT Package Module Electrothermal Bidirectional Coupling Simulation Method, Apparatus, Electronic Device, and Storage Medium (Publication No.: CN116451632A)," the electromagnetic losses generated during the testing process of this invention are generated by the thyristor under test under actual circuit action (see step 2.6), involving the physical processes of semiconductor device turn-on and turn-off, and can accurately test the electrothermal bidirectional coupling characteristics of the thyristor under test.

[0039] (2) This invention reduces the time cost of the simulation test method for the electrothermal bidirectional coupling of thyristors in high-repetition-rate operating mode. Without this invention, the best-performing method described in the background section, the finite element method based on semiconductor physics, is required to test the electrothermal bidirectional coupling characteristics of thyristors in high-repetition-rate operating mode, requiring a total of N tests. f For example, in a simulation where f = 10 Hz, ts = 5min, N f =3000, see step 3.1 of this invention. When using this invention, the simulation of the thyristor electrothermal bidirectional coupling in the repetition frequency operating mode generally only needs to be performed N+1 times. For example, when f = 10Hz, t s = 5min, N f =3000, T sj When (t) = 0.083t + 7.5, N = 10, T sj ((n+1)Δt)-T sj If (nΔt) > 1℃, satisfying the setting condition for N, then N+1 = 11, as shown in steps 3.2 and 3.4 of this invention. Therefore, this invention can effectively reduce the time cost of testing the electrothermal bidirectional coupling characteristics of thyristors in repetition-frequency operating mode. Attached image description:

[0040] Figure 1 This is the overall logic structure diagram of the thyristor electrothermal bidirectional coupling characteristic test platform for the repetition frequency working mode of the present invention;

[0041] Figure 2 Is adopted Figure 1 The flowchart shows the overall process of testing the electrothermal bidirectional coupling characteristics of thyristors in repetitive frequency operating mode using a test platform.

[0042] Figure 3 This is the present invention. Figure 2 A detailed flowchart of the first step in the process;

[0043] Figure 4 This is the present invention. Figure 2 The detailed flowchart of the second step;

[0044] Figure 5 This is the present invention. Figure 2 The detailed flowchart of the third step;

[0045] Figure 6 This is a schematic diagram of the change curve of the quasi-steady-state junction temperature of the thyristor over time in the first step of Embodiment 1 of the present invention;

[0046] Figure 7 This is the result of the thyristor anode current test in the third step of Embodiment 1 of the present invention for 11 repetition frequency operating modes;

[0047] Figure 8 This is the test result of the thyristor voltage drop in 11 repetition frequency operating modes in the third step of Embodiment 1 of the present invention;

[0048] Figure 9 This is the junction temperature test result of thyristors in 11 repetition frequency operating modes in the third step of Embodiment 1 of the present invention. Detailed Implementation

[0049] To make the technical solution of the present invention clearer and easier to understand, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. The specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention.

[0050] like Figure 1 As shown, the thyristor electrothermal bidirectional coupling characteristic testing platform of the present invention in repetition frequency operating mode consists of a main circuit unit, a trigger unit, and a non-contact temperature measurement unit. The main circuit unit is connected to the anode and cathode of the thyristor SCR under test, providing the SCR with operating voltage and adjustable waveform conduction current; the trigger unit is connected to the gate and cathode of the SCR under test, used to trigger the SCR to conduct; the non-contact temperature measurement unit is placed next to the SCR, used to measure the external cathode temperature of the SCR under test in real time.

[0051] The main circuit unit consists of a high-voltage DC power supply, an energy storage capacitor C1, a load inductor L1, a load resistor R1, and a protection diode D1.

[0052] The high-voltage DC power supply adopts a fully digital high-voltage DC power supply with an output DC voltage range of 0 to 5kV. Within this range, the output voltage is continuously adjustable and is used to provide power to the energy storage capacitor C1. The positive and negative terminals of the high-voltage DC power supply are connected to the two ends of the energy storage capacitor C1, respectively.

[0053] The energy storage capacitor C1 is composed of multiple capacitors connected in parallel. The maximum operating voltage of the energy storage capacitor C1 is 8kV, and the total capacitance range is 1μF~50μF. It is used to store electrical energy. One end of the energy storage capacitor C1 is connected to the positive terminal of the high voltage DC power supply, the anode of the thyristor SCR under test, and the cathode of the protection diode D1. The other end is connected to one end of the load inductor L1 and the negative terminal of the high voltage DC power supply.

[0054] The load inductor L1 is a copper wire-wound inductor with a power greater than 100W and an inductance value range of 0μH to 10μH. It is used to adjust the waveform of the conduction current flowing through the thyristor SCR under test. One end of the load inductor L1 is connected to one end of the energy storage capacitor C1, and the other end is connected to one end of the load resistor R1.

[0055] The load resistor R1 is a ceramic tube wire-wound resistor with a power greater than 100W and a resistance value range of 0 to 10Ω. It is used to adjust the waveform of the conduction current flowing through the thyristor SCR under test. One end of the load resistor R1 is connected to one end of the inductor L1, and the other end is connected to the cathode of the thyristor SCR under test, the anode of the protection diode D1, and ground.

[0056] The protection diode D1 is a high-power rectifier diode with a reverse voltage peak of 6.5kV and a forward average current of 1kA. It is used to protect the thyristor SCR under test. Its cathode is connected to one end of the energy storage capacitor C1 and the anode of the thyristor SCR under test. Its anode is connected to one end of the load resistor R1, the cathode of the thyristor SCR under test, and ground.

[0057] The triggering unit consists of a triggering module and a triggering control module:

[0058] The trigger module adopts a strong trigger circuit with a peak output voltage of 15V and an output voltage rise rate range of 2.5~15V / μs. Its output terminal is connected to the gate and cathode of the thyristor SCR under test.

[0059] The trigger control module uses a fiber optic trigger controller, which can output optical trigger signals. Its output terminal is connected to the input terminal of the trigger module.

[0060] The non-contact temperature measurement unit consists of one online infrared thermometer and one computer.

[0061] The online infrared thermometer uses the Optris CT 4M model online infrared thermometer, with a temperature range of 0℃~500℃, a spectral range of 2.2μm~6.0μm, and a response time of 1ms. It is used to measure the external cathode temperature of the SCR thyristor under test in real time, and its output terminal is connected to the computer I / O interface.

[0062] The computer is equipped with thermal imaging software and semiconductor device simulation software. The thermal imaging software is used to record and display the real-time temperature measured by the linear infrared thermometer, and the semiconductor device simulation software is used to simulate the bidirectional electrothermal coupling characteristics of the thyristor under test.

[0063] An embodiment of the present invention is as follows:

[0064] Figure 1The medium-voltage DC power supply charges the energy storage capacitor C1 at a voltage U0 of 1.5kV. The capacitance of energy storage capacitor C1 is 16.5μF. The inductance of load inductor L1 is 1.7μH, and the resistance of load resistor R1 is 0.07Ω. The protection diode D1 is a high-power rectifier diode with a peak reverse voltage of 6.5kV and an average forward current of 1kA. The trigger module uses a strong trigger circuit with a peak output voltage of 15V and an output voltage rise rate range of 2.5~15V / μs. The trigger control module uses a fiber optic trigger controller that can output a light trigger signal. The online infrared thermometer uses an Optiris CT 4M with a temperature range of 0℃~500℃, a spectral range of 2.2μm~6.0μm, and a response time of 1ms. The computer is equipped with thermal imaging software CompactPlus Connect (version 1.5.23) and semiconductor device simulation software Silvaco TCAD (version 2019).

[0065] The overall process of testing the electrothermal bidirectional coupling of a thyristor in repetition rate operating mode using the above embodiments is as follows: Figure 2 As shown, it includes the following steps:

[0066] The first step involved conducting a temperature rise experiment on a thyristor operating in repetition-frequency mode on a thyristor electrothermal bidirectional coupling characteristic test platform to obtain the quasi-steady-state junction temperature T of the thyristor operating in repetition-frequency mode. sj Curve of change of T with time t sj (t), the specific method is as follows:

[0067] Step 1.1: Set the output voltage of the high-voltage DC power supply of the thyristor electrothermal bidirectional coupling characteristic test platform in repetition frequency operation mode to U0 = 1.5kV and the output current to I0 = 4000mA.

[0068] Step 1.2: The trigger control module of the thyristor electrothermal bidirectional coupling characteristic test platform in repetition frequency mode controls the trigger module to work, triggering the thyristor SCR under test, causing the energy storage capacitor C1 of the main circuit unit to charge and discharge at a frequency f = 10Hz. The total test time is t. s =5min;

[0069] Step 1.3: The online infrared thermometer of the non-contact temperature measurement unit measures the external cathode temperature of the SCR under test, and the thermal imaging software in the computer records and displays the change of the external cathode temperature of the SCR under test over time. Since the response time of the online infrared thermometer is much longer than the single working time of the SCR under test, the measured external cathode temperature of the thyristor is the quasi-steady-state junction temperature of the SCR under test during the working interval, and thus the quasi-steady-state junction temperature T of the thyristor in the repetition frequency mode can be measured. sj Curve T of change over timesj (t), such as Figure 6 As shown, this figure was drawn based on data from thermal imaging software, representing the quasi-steady-state junction temperature T of the thyristor. sj It increases with time.

[0070] The second step involves using the device simulator in the computer's semiconductor device simulation software to create a hybrid simulation model of the SCR-circuit under test. The specific method is as follows:

[0071] Step 2.1: Based on the dimensional parameters of the thyristor SCR under test, use the ATLAS device simulator commands x.mesh and y.mesh of the semiconductor device simulation software SilvacoTCAD (version 2019) to build the model of the thyristor SCR under test and initialize the mesh, where x.min = 0, x.max = 5850, y.min = 0, y.max = 1200;

[0072] Step 2.2: Based on the material of the thyristor SCR under test, use the ATLAS device simulator command "region" in Silvaco TCAD (version 2019) to define the region material. The materials of the thyristor SCR model under test are silicon and silicon dioxide.

[0073] Step 2.3: Based on the electrode parameters (anode, cathode, amplification gate, and gate) of the thyristor SCR under test, define the electrodes using the ATLAS device simulator command electrode in Silvaco TCAD (version 2019). The electrodes of the thyristor SCR model under test are anode, cathode, amplification gate, and gate.

[0074] Step 2.4: Based on the doping parameters (P1, N1, P2, N2) of the SCR under test, use the ATLAS device simulator command in SilvacoTCAD (version 2019) to define the doping of the four-layer (P1, N1, P2, N2) structure of the SCR under test model. The doping concentration in regions P1 and P2 is 6 × 10⁻⁶. 16 cm -3 The doping concentrations in regions N1 and N2 are 1.3 × 10⁻⁶ and 1.3 × 10⁻⁶, respectively. 13 cm -3 and 1×10 20 cm -3 ;

[0075] Step 2.5: Use the ATLAS device simulator command in Silvaco TCAD (version 2019) to select physical models including mobility models kla and fldmob, composite models klasrh and klaaug, impact ionization model impact, band narrowing model bgn, and lattice heating model lat.temp.

[0076] Step 2.6: Based on the main circuit unit structure of the thyristor electrothermal bidirectional coupling characteristic test platform in the repetition frequency operating mode, the netlist state of the actual circuit of the thyristor under test (SCR) is defined using the device simulator ATLAS of the semiconductor device simulation software Silvaco TCAD (version 2019). A hybrid simulation model of the thyristor under test and the circuit is established, which includes circuit components and circuit topology. The circuit components include the thyristor under test model, energy storage capacitor C1, load inductor L1, load resistor R1, and protection diode D1. The circuit topology is that the thyristor under test model, C1, L1, and load resistor R1 are connected in series, and D1 is connected in reverse parallel between the anode and cathode of the thyristor under test model.

[0077] The third step is to determine the quasi-steady-state junction temperature T of the thyristor in the repetition rate operating mode obtained in step 1.3. sj Curve T of change over time sj (t) and the hybrid simulation model of the SCR-circuit under test obtained in step 2.6 were used to set global temperature parameters using the ATLAS device simulator in Silvaco TCAD (version 2019), and the electrical parameters and junction temperature T of the thyristor in repetition rate mode were tested. j The specific method is:

[0078] Step 3.1, based on the quasi-steady-state junction temperature T of the thyristor obtained in step 1.3 sj Curve of change of T with time t sj (t), to obtain the total number of pulses N in the repetition frequency operating mode. f N f =f×t s =3000, f=10Hz, t s =5min, the test order is n, and the initial order is recorded as n=0;

[0079] Step 3.2, set the global temperature T = T sj (t0), where T sj (t0) indicates that at time T sj (t) is the ordinate of the curve at t = t0, where t0 = nΔt, and Δt is the ordinate of T. sj The time interval (t) is N, where N is 10, and Δt = N. f / (N×f)=30s;

[0080] Step 3.3: Based on the hybrid simulation model of the SCR-circuit under test obtained in Step 2.6, start the ATLAS device simulator in SilvacoTCAD (version 2019) and obtain the global temperature T = T through test calculations. sj Electrical parameters and junction temperature of the tested SCR thyristor at (t0) The electrical parameters of the thyristor SCR under test include the SCR anode current. and voltage drop

[0081] Step 3.4, let n = n+1. If n ≤ N, go to step 3.1; if n > N, then we have obtained the test results of the thyristor electrothermal bidirectional coupling characteristics for three sets of N+1 repetition frequency operating modes: Figure 7 This represents the anode current of the 11 tested SCR transistors. As n increases, the anode current of the tested SCR gradually decreases; Figure 8 This indicates the voltage drop across the 11 tested SCR transistors. As n increases, the voltage drop of the tested thyristor SCR gradually increases; Figure 9 This indicates the junction temperature of the 11 tested SCR transistors. As n increases, the junction temperature of the thyristor gradually increases, and the junction temperature rise also increases.

[0082] In step 2.5 of this invention, the selected semiconductor physical model includes a temperature-related mobility model kla, a recombination model klasrh, and a lattice heating model lat.temp, thereby realizing the simulation test of electrothermal bidirectional coupling characteristics. This model can reflect the physical process of semiconductor device turn-on and turn-off and accurately simulate the actual junction temperature. In step 2.6, a circuit model with the same main circuit unit structure as the thyristor electrothermal bidirectional coupling characteristic test platform in repetition frequency mode is established. Since electromagnetic loss is generated by the thyristor device under the action of the actual test circuit, the accuracy of the simulation is improved. Therefore, this invention improves the accuracy of the electrothermal bidirectional coupling characteristic test of thyristors in repetition frequency mode in terms of both electromagnetic loss and junction temperature.

[0083] This invention utilizes a combination of experiments and simulations to test the bidirectional electrothermal coupling characteristics of thyristors operating in repetition frequency mode. Therefore, the bidirectional electrothermal coupling characteristic test of the thyristors operating in repetition frequency mode in step 3.4 requires a total of N+1=11 tests. Without the method of this invention, the bidirectional electrothermal coupling characteristic test of the thyristors operating in repetition frequency mode would require a total of N tests. f The number of times is 3000, as described in the background section and step 3.1. Therefore, this invention reduces the time cost of testing the electrothermal bidirectional coupling characteristics of thyristors in repetition frequency operating mode.

Claims

1. A test method for the electrothermal bidirectional coupling characteristics of a thyristor operating in high-repetition-rate (PRR) mode, using a test platform for this characteristic. The test platform comprises a main circuit unit, a trigger unit, and a non-contact temperature measurement unit. The main circuit unit is connected to the anode and cathode of the thyristor under test (SCR), providing the SCR with operating voltage and an adjustable waveform conduction current. The trigger unit is connected to the gate and cathode of the SCR to trigger its conduction. The non-contact temperature measurement unit is placed beside the SCR to measure the external cathode temperature in real time. The main circuit unit consists of a high-voltage DC power supply, an energy storage capacitor C1, a load inductor L1, a load resistor R1, and a protection diode D1. A high-voltage DC power supply provides power to the energy storage capacitor C1. The positive and negative terminals of the high-voltage DC power supply are connected to the two ends of the energy storage capacitor C1, respectively. The energy storage capacitor C1 stores electrical energy. One end of the energy storage capacitor C1 is connected to the positive terminal of the high-voltage DC power supply, the anode of the thyristor SCR under test, and the cathode of the protection diode D1. The other end of the energy storage capacitor C1 is connected to one end of the load inductor L1 and the negative terminal of the high-voltage DC power supply. The load inductor L1 is used to adjust the waveform of the conduction current flowing through the thyristor SCR under test. One end of the load inductor L1 is connected to one end of the energy storage capacitor C1, and the other end is connected to one end of the load resistor R1. The load resistor R1 is used to adjust the waveform of the conduction current flowing through the thyristor SCR under test. One end of the load resistor R1 is connected to one end of the inductor L1, and the other end is connected to the cathode of the thyristor SCR under test, the anode of the protection diode D1, and ground. The protection diode D1 is used to protect the thyristor SCR under test, and its cathode is connected to... One end of the energy storage capacitor C1 is connected to the anode of the thyristor SCR under test, and its anode is connected to one end of the load resistor R1, the cathode of the thyristor SCR under test, and ground; the trigger unit consists of a trigger module and a trigger control module: the output terminal of the trigger module is connected to the gate and cathode of the thyristor SCR under test; the trigger control module adopts a fiber optic trigger controller, which can output an optical trigger signal, and its output terminal is connected to the input terminal of the trigger module; the non-contact temperature measurement unit consists of one online infrared thermometer and one computer: the online infrared thermometer is used to measure the external cathode temperature of the thyristor SCR under test in real time, and its output terminal is connected to the computer I / O interface; the computer is equipped with thermal imaging software and semiconductor device simulation software. The thermal imaging software is used to record and display the real-time temperature measured by the online infrared thermometer, and the semiconductor device simulation software is used to simulate the electrothermal bidirectional coupling characteristics of the thyristor under test; the feature is that it includes the following steps: The first step involved conducting a temperature rise experiment on a thyristor operating in repetition-frequency mode on a thyristor electrothermal bidirectional coupling characteristic test platform to obtain the quasi-steady-state junction temperature T of the thyristor operating in repetition-frequency mode. sj Curve of change of T with time t sj (t): Step 1.1: Set the output voltage U0 and output current I0 of the high voltage DC power supply of the thyristor electrothermal bidirectional coupling characteristic test platform in repetition frequency working mode; Step 1.2: The trigger control module of the thyristor electrothermal bidirectional coupling characteristic test platform in repetition frequency mode controls the trigger module to work, triggering the thyristor under test (SCR), causing the energy storage capacitor C1 of the main circuit unit to charge and discharge at a frequency f. The total test time is t. s ; Step 1.3: The online infrared thermometer of the non-contact temperature measurement unit measures the external cathode temperature of the SCR under test, and the thermal imaging software in the computer records and displays the change of the external cathode temperature of the SCR under test over time, thus obtaining the quasi-steady-state junction temperature T of the thyristor in repetition mode. sj Curve T of change over time sj (t); The second step involves using the device simulator in the computer's semiconductor device simulation software to create a hybrid simulation model of the SCR circuit under test. Step 2.1: Based on the dimensional parameters of the thyristor SCR under test, establish the model of the thyristor SCR under test and initialize the mesh using the device simulator of the semiconductor device simulation software; Step 2.2: Based on the material of the thyristor SCR under test, define the region material using the device simulator of the semiconductor device simulation software. The materials of the thyristor SCR model under test are silicon and silicon dioxide. Step 2.3: Based on the electrode parameters of the thyristor SCR under test, namely anode, cathode, amplification gate, and gate, define the electrodes of the thyristor SCR model under test using the device simulator of the semiconductor device simulation software. The electrodes of the thyristor SCR model under test include anode, cathode, amplification gate, and gate. Step 2.4: Based on the doping parameters of P1, N1, P2, and N2 of the thyristor SCR under test, define the P1, N1, P2, and N2 structure doping of the thyristor SCR model under test using the device simulator of the semiconductor device simulation software. Step 2.5: Select a physical model using the device simulator in the semiconductor device simulation software; Step 2.6: Based on the main circuit unit structure of the thyristor electrothermal bidirectional coupling characteristic test platform in the repetition frequency operating mode, the netlist state of the actual circuit of the thyristor SCR under test is defined using the device simulator of the semiconductor device simulation software. A hybrid simulation model of the thyristor SCR under test and the circuit is established, which includes circuit components and circuit topology. The circuit components include the thyristor SCR model under test, energy storage capacitor C1, load inductor L1, load resistor R1 and protection diode D1. The circuit topology is that the thyristor SCR model under test, C1, L1 and load resistor R1 are connected in series, and D1 is connected in reverse parallel between the anode and cathode of the thyristor SCR model under test. The third step is to determine the quasi-steady-state junction temperature T of the thyristor in the repetition rate operating mode obtained in step 1.

3. sj Curve T of change over time sj (t) and the hybrid simulation model of the SCR-circuit under test obtained in step 2.6, the global temperature parameters are set through the device simulator of the semiconductor device simulation software, and the electrical parameters and junction temperature T of the thyristor in repetition rate mode are tested. j : Step 3.1, based on the quasi-steady-state junction temperature T of the thyristor obtained in step 1.3 sj Curve of change of T with time t sj (t), to obtain the total number of pulses N in the repetition frequency operating mode. f For f×t s f is the charging and discharging frequency of the energy storage capacitor C1 in the main circuit unit of the thyristor electrothermal bidirectional coupling characteristic test platform in repetition mode, and t is the charging and discharging frequency of the capacitor C1. s This is the total test time, the test order is n, and the initial order is denoted as n=0; Step 3.2, set the global temperature T = T sj (t0), where T sj (t0) indicates that at time T sj (t) is the ordinate of the curve at t = t0, where t0 = nΔt, and Δt is the ordinate of T. sj The time interval (t) is given by Δt = N. f / (N×f), where N is a manually set number of times, its function is to reduce T sj (t) Divide the time t on the horizontal axis into N parts with a time interval of Δt. Substitute t0 = 0, ..., nΔt, ..., NΔt into T respectively. sj In (t), N+1 global temperatures T are obtained, and the criterion for setting N is T. sj ((n+1)Δt)-T sj (nΔt)≥1℃, meaning the difference between adjacent global temperatures T is greater than or equal to 1℃; Step 3.3: Based on the hybrid simulation model of the SCR-circuit under test obtained in Steps 3.1 and 2.6, start the device simulator of the semiconductor device simulation software, and obtain the global temperature T = T through test calculations. sj Electrical parameters and junction temperature of the tested SCR thyristor at (t0) The electrical parameters of the thyristor SCR under test include the SCR anode current. and pressure drop Step 3.4, let n = n+1. If n ≤ N, go to step 3.1; if n > N, then we have obtained the test results of the thyristor electrothermal bidirectional coupling characteristics for three sets of N+1 repetition frequency operating modes, that is, the anode current of the N+1 tested thyristors SCR. The voltage drop of N+1 tested thyristors SCR is The junction temperature of the N+1 tested SCR thyristors is...

2. The test method for the electrothermal bidirectional coupling of a thyristor in repetition-frequency operating mode using the thyristor electrothermal bidirectional coupling characteristic test platform as described in claim 1, characterized in that... The thermal imaging software in the computer is CompactPlus Connect, version 1.5.23 or later; the semiconductor device simulation software is Silvaco TCAD, version 2019 or later.

3. The test method for the electrothermal bidirectional coupling of a thyristor in repetition-frequency operating mode using the thyristor electrothermal bidirectional coupling characteristic test platform as described in claim 1, characterized in that... In step 1.1, the output voltage U0 is set to 0.1–5kV and the output current I0 is set to 1–4000mA.

4. The test method for the electrothermal bidirectional coupling of a thyristor in repetition-frequency operating mode using the thyristor electrothermal bidirectional coupling characteristic test platform as described in claim 1, characterized in that... The frequency f mentioned in step 1.2 is 1~50Hz, and the total test time t s ≥1s.

5. The test method for the electrothermal bidirectional coupling of a thyristor in repetition-frequency operating mode using the thyristor electrothermal bidirectional coupling characteristic test platform as described in claim 1, characterized in that... The physical models described in step 2.5 include mobility models, recombination models, collisional ionization models, band narrowing models, and lattice heating models.

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