RF power amplifiers and electronics

Abstract

The present invention provides a radio frequency power amplifier and an electronic device, which relate to the field of communication technology. The radio frequency power amplifier comprises: an input port, a bias circuit, an amplifying circuit and an output port connected in sequence; the amplifying circuit comprises an amplifying MOS tube and an auxiliary MOS tube matched with the amplifying MOS tube; the source of the amplifying MOS tube and the auxiliary MOS tube is grounded; the drain of the amplifying MOS tube and the auxiliary MOS tube is connected, and connected to the output port; the gates of the amplifying MOS tube and the auxiliary MOS tube are respectively connected to the input port via the bias circuit; the amplifying circuit is also configured with an auxiliary capacitor circuit, one end of the auxiliary capacitor circuit is connected to the gate of the amplifying MOS tube, and the other end is grounded. The radio frequency power amplifier and the electronic device provided by the present invention enable the radio frequency power amplifier to have better linearity, thereby meeting the design requirements of low power consumption and improving the use efficiency of the radio frequency power amplifier.

Description

Technical Field

[0001] The present invention relates to the field of communication technology, and in particular to a radio frequency power amplifier and electronic equipment. Background Art

[0002] With the development of wireless mobile communications, the Internet of Things and satellite communication technologies, higher and higher requirements are placed on the performance of transmitters in communication systems. As the terminal output module of the transmitter, the performance of the RF power amplifier determines the overall quality of the transmitter.

[0003] Linearity is one of the core indicators of RF power amplifiers. Under the current situation of increasing integration and lower power consumption requirements, designing high-linearity RF power amplifiers is an important challenge.

[0004] For CMOS process amplifiers, if the channel length modulation effect and other second-order nonlinear effects are ignored, it can be seen that its IIP3 increases with the increase of overdrive voltage. Therefore, in related technologies, the overdrive voltage of the amplifier is often increased by increasing power consumption, thereby improving its linearity.

[0005] However, as power consumption requirements become lower and lower today, increasing the power consumption of the RF power amplifier is not the best approach. That is, the related technology cannot meet the low power consumption requirements of the RF power amplifier by increasing the power consumption, which reduces the utilization efficiency of the RF power amplifier. Summary of the invention

[0006] In view of this, an object of the present invention is to provide a radio frequency power amplifier and an electronic device to alleviate the above technical problems.

[0007] In the first aspect, an embodiment of the present invention provides a radio frequency power amplifier, comprising: an input port, a bias circuit, an amplifying circuit and an output port connected in sequence; the amplifying circuit comprises an amplifying MOS tube and an auxiliary MOS tube matched with the amplifying MOS tube; the sources of the amplifying MOS tube and the auxiliary MOS tube are grounded; the drains of the amplifying MOS tube and the auxiliary MOS tube are connected and connected to the output port; the gates of the amplifying MOS tube and the auxiliary MOS tube are respectively connected to the input port via the bias circuit; wherein the amplifying circuit is also configured with an auxiliary capacitor circuit; one end of the auxiliary capacitor circuit is connected to the gate of the amplifying MOS tube, and the other end is grounded.

[0008] In combination with the first aspect, an embodiment of the present invention provides a first possible implementation manner of the first aspect, wherein the above-mentioned input port is a differential signal input port, including a first input end and a second input end; the amplifying MOS tube includes a first amplifying MOS tube corresponding to the first input end and a second amplifying MOS tube corresponding to the second input end; the auxiliary MOS tube includes a first auxiliary MOS tube corresponding to the first input end and a second auxiliary MOS tube corresponding to the second input end; the auxiliary capacitor circuit includes a first auxiliary capacitor corresponding to the first amplifying MOS tube, and a second auxiliary capacitor corresponding to the second amplifying MOS tube; one end of the first auxiliary capacitor is connected to the gate of the first amplifying MOS tube, and the other end is grounded; one end of the second auxiliary capacitor is connected to the gate of the second amplifying MOS tube, and the other end is grounded.

[0009] In combination with the first possible implementation manner of the first aspect, the embodiment of the present invention provides a second possible implementation manner of the first aspect, wherein the first auxiliary capacitor and the second auxiliary capacitor are fixed capacitors.

[0010] In combination with the first possible implementation manner of the first aspect, the embodiment of the present invention provides a third possible implementation manner of the first aspect, wherein the first auxiliary capacitor and the second auxiliary capacitor are adjustable capacitors.

[0011] In combination with the first aspect, an embodiment of the present invention provides a fourth possible implementation of the first aspect, wherein the amplifying MOS transistor and the auxiliary MOS transistor are NMOS transistors.

[0012] In combination with the fourth possible implementation of the first aspect, the embodiment of the present invention provides a fifth possible implementation of the first aspect, wherein the amplifying MOS tube operates in a saturation region; and the auxiliary MOS tube operates in a subthreshold region.

[0013] In combination with the first possible implementation manner of the first aspect, an embodiment of the present invention provides a sixth possible implementation manner of the first aspect, wherein the above-mentioned bias circuit includes a bias unit respectively connected to the first input end and the second input; the bias unit includes a DC blocking capacitor and a bias signal input circuit; the DC blocking capacitor is arranged on a connection path from the input port to the gates of the amplifying MOS tube and the auxiliary MOS tube, and the differential signal input by the input port is transmitted to the gates of the amplifying MOS tube and the auxiliary MOS tube after passing through the DC blocking capacitor; the bias signal input circuit is used to input bias signals to the gates of the amplifying MOS tube and the auxiliary MOS tube.

[0014] In combination with the sixth possible implementation manner of the first aspect, the embodiment of the present invention provides a seventh possible implementation manner of the first aspect, wherein the DC blocking capacitor is a fixed capacitor.

[0015] In combination with the sixth possible implementation of the first aspect, an embodiment of the present invention provides an eighth possible implementation of the first aspect, wherein the above-mentioned bias signal input circuit is respectively arranged on the gates of the amplifying MOS tube and the auxiliary MOS tube; wherein the bias signal input circuit includes a pull-up resistor and a bias signal source; one end of the pull-up resistor is connected to the gate of the amplifying MOS tube or the auxiliary MOS tube, and the other end is connected to the bias signal source.

[0016] In a second aspect, an embodiment of the present invention further provides an electronic device, wherein the electronic device is equipped with the radio frequency power amplifier described in the first aspect.

[0017] The embodiments of the present invention bring the following beneficial effects:

[0018] The radio frequency power amplifier and electronic device provided by the embodiment of the present invention include: an input port, a bias circuit, an amplifying circuit and an output port connected in sequence; the amplifying circuit includes an amplifying MOS tube and an auxiliary MOS tube matched with the amplifying MOS tube; the source electrodes of the amplifying MOS tube and the auxiliary MOS tube are grounded; the drain electrodes of the amplifying MOS tube and the auxiliary MOS tube are connected and connected to the output port; the gate electrodes of the amplifying MOS tube and the auxiliary MOS tube are respectively connected to the input port via the bias circuit, wherein the amplifying circuit is further configured with an auxiliary capacitor circuit, one end of the auxiliary capacitor circuit is connected to the gate electrode of the amplifying MOS tube, and the other end is grounded, and the auxiliary capacitor circuit can reduce the influence of the gate-source parasitic capacitance of the auxiliary MOS tube by means of capacitance, thereby improving the linearity of the radio frequency power amplifier, so that the radio frequency power amplifier has better linearity without increasing additional power consumption, thereby meeting the design requirements of low power consumption and improving the use efficiency of the radio frequency power amplifier.

[0019] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention are realized and obtained by the structures particularly pointed out in the description, claims and drawings.

[0020] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0022] Figure 1 A structural block diagram of a radio frequency power amplifier provided by an embodiment of the present invention;

[0023] Figure 2 A circuit diagram of a radio frequency power amplifier provided by an embodiment of the present invention;

[0024] Figure 3 A curve graph provided by an embodiment of the present invention;

[0025] Figure 4 A circuit diagram of another radio frequency power amplifier provided by an embodiment of the present invention;

[0026] Figure 5 Another curve graph provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0028] Generally, for CMOS process amplifiers, if the channel length modulation effect and other second-order nonlinear effects are ignored, the overdrive voltage of the amplifier is increased by increasing power consumption, thereby improving its linearity. However, as power consumption requirements are getting lower and lower, increasing the power consumption of RF power amplifiers is not a good method and it is difficult to meet the low power design requirements.

[0029] Based on this, an RF power amplifier and an electronic device provided in an embodiment of the present invention can effectively alleviate the above technical problems.

[0030] To facilitate understanding of this embodiment, a radio frequency power amplifier disclosed in an embodiment of the present invention is first introduced in detail.

[0031] In a possible implementation manner, an embodiment of the present invention provides a radio frequency power amplifier, such as Figure 1The structural block diagram of a radio frequency power amplifier shown includes: an input port 10, a bias circuit 20, an amplifying circuit 30 and an output port 40 connected in sequence.

[0032] Specifically, the amplifier circuit 30 includes an amplifier MOS tube 301 and an auxiliary MOS tube 302 matched with the amplifier MOS tube 301; wherein the source electrodes of the amplifier MOS tube 301 and the auxiliary MOS tube 302 are grounded; the drain electrodes of the amplifier MOS tube 301 and the auxiliary MOS tube 302 are connected, and connected to the output port 40; the gate electrodes of the amplifier MOS tube 301 and the auxiliary MOS tube 302 are respectively connected to the input port 10 via the bias circuit 20.

[0033] The amplifier circuit 30 is further configured with an auxiliary capacitor circuit 303 ; one end of the auxiliary capacitor circuit is connected to the gate of the amplifier MOS tube 301 , and the other end is grounded.

[0034] In actual use, the RF power amplifier in the embodiment of the present invention is actually a pre-derivative superposition technology, which reduces the influence of the gate-source parasitic capacitance of the auxiliary MOS tube by adding an auxiliary capacitor circuit, thereby improving the linearity of the RF power amplifier.

[0035] Therefore, the RF power amplifier provided by the embodiment of the present invention includes: an input port, a bias circuit, an amplifying circuit and an output port connected in sequence; the amplifying circuit includes an amplifying MOS tube and an auxiliary MOS tube matched with the amplifying MOS tube; the source electrodes of the amplifying MOS tube and the auxiliary MOS tube are grounded; the drain electrodes of the amplifying MOS tube and the auxiliary MOS tube are connected and connected to the output port; the gate electrodes of the amplifying MOS tube and the auxiliary MOS tube are respectively connected to the input port via the bias circuit, wherein the amplifying circuit is further configured with an auxiliary capacitor circuit, one end of the auxiliary capacitor circuit is connected to the gate electrode of the amplifying MOS tube, and the other end is grounded, and the auxiliary capacitor circuit can reduce the influence of the gate-source parasitic capacitance of the auxiliary MOS tube by means of capacitance, thereby improving the linearity of the RF power amplifier, so that the RF power amplifier has better linearity without increasing additional power consumption, thereby meeting the design requirements of low power consumption and improving the use efficiency of the RF power amplifier.

[0036] In actual use, the RF power amplifier in the embodiment of the present invention is used in a differential circuit. Therefore, the above-mentioned input port is a differential signal input port, that is, the input port includes a first input end and a second input end; the corresponding amplifying MOS tube includes a first amplifying MOS tube corresponding to the first input end and a second amplifying MOS tube corresponding to the second input end; the auxiliary MOS tube includes a first auxiliary MOS tube corresponding to the first input end and a second auxiliary MOS tube corresponding to the second input end; the auxiliary capacitor circuit includes a first auxiliary capacitor corresponding to the first amplifying MOS tube, and a second auxiliary capacitor corresponding to the second amplifying MOS tube.

[0037] Furthermore, one end of the first auxiliary capacitor is connected to the gate of the first amplifying MOS tube, and the other end is grounded; one end of the second auxiliary capacitor is connected to the gate of the second amplifying MOS tube, and the other end is grounded.

[0038] For ease of understanding, Figure 1 On the basis of Figure 2 FIG. 1 shows a circuit diagram of a radio frequency power amplifier. Figure 2 As shown, VIP and VIN represent the first input terminal and the second input terminal, respectively, for differential signal input. M1 and M3 represent the first amplifying MOS tube and the second amplifying MOS tube, respectively, and M2 and M4 represent the first auxiliary MOS tube and the second auxiliary MOS tube, respectively. Capacitor C5 and capacitor C6 represent the first auxiliary capacitor and the second auxiliary capacitor. OUT1 and OUT2 represent the output port of the RF power amplifier.

[0039] In actual use, in the RF power amplifier of the embodiment of the present invention, the first auxiliary MOS tube M2 and the second auxiliary MOS tube M4 at different voltage biases are stacked on the first amplifying MOS tube M1 and the second amplifying MOS tube M3, and the first amplifying MOS tube M1 and the second amplifying MOS tube M3 actually constitute a common source structure, so the Taylor expansion of the drain current corresponding to its output port can be expressed as:

[0040]

[0041] Among them, I dc represents the DC component of the drain current, gm represents the Taylor factor, and v gs Indicates the gate-source voltage of the first amplifying MOS tube M1 and the second amplifying MOS tube M3.

[0042] It can be seen from the above Taylor expansion that the quality of the third-order nonlinearity of the first amplifying MOS tube M1 and the second amplifying MOS tube M3 depends on the Taylor factor gm″. The curve of the Taylor factor gm″ changing with vgs is as follows: Figure 3 As shown. Figure 3It can be seen that if the first amplifying MOS tube M1 and the second amplifying MOS tube M3, as well as the first auxiliary MOS tube M2 and the second auxiliary MOS tube M4 are given appropriate bias points, the first amplifying MOS tube M1 and the second amplifying MOS tube M3 are biased at Figure 2 The first auxiliary MOS tube M2 and the second auxiliary MOS tube M4 are biased at the trough position of the curve. Figure 2 At the peak position of the curve, at this time, the gm" of the amplifying MOS tube (the first amplifying MOS tube M1 and the second amplifying MOS tube M3) and the auxiliary MOS tube (the first auxiliary MOS tube M2 and the second auxiliary MOS tube M4) can offset each other, thereby improving the third-order nonlinearity of the amplifying MOS tube.

[0043] Furthermore, the amplifying MOS transistors (the first amplifying MOS transistor M1 and the second amplifying MOS transistor M3 ) in the embodiment of the present invention operate in a saturation region, and the auxiliary MOS transistors (the first auxiliary MOS transistor M2 and the second auxiliary MOS transistor M4 ) operate in a subthreshold region.

[0044] Furthermore, since the auxiliary MOS tubes (the first auxiliary MOS tube M2 and the second auxiliary MOS tube M4) operate in the subthreshold region, their gate-source parasitic capacitance will change with the gate-source voltage. At this time, the gate-source parasitic capacitance of the auxiliary MOS tubes (the first auxiliary MOS tube M2 and the second auxiliary MOS tube M4) will contribute to nonlinearity, thereby deteriorating the third-order nonlinearity of the RF power amplifier.

[0045] In the embodiment of the present invention, since an auxiliary capacitor circuit is connected to the gate of the amplifying MOS tube, the influence of the gate-source parasitic capacitance of the auxiliary MOS tube can be reduced by adding auxiliary capacitors without additionally increasing the area and power consumption of the amplifying MOS tube, thereby improving the linearity of the RF power amplifier.

[0046] further, Figure 2 2 shows an implementation in which the first auxiliary capacitor C5 and the second auxiliary capacitor C6 are fixed capacitors, and the amplifying MOS tube and the auxiliary MOS tube are NMOS tubes.

[0047] Further, if Figure 2 As shown, the bias circuit includes a bias unit connected to the first input terminal and the second input terminal respectively; specifically, the bias unit includes a DC blocking capacitor and a bias signal input circuit; the DC blocking capacitor is arranged on the connection path from the input port to the gate of the amplifying MOS tube and the auxiliary MOS tube, that is, Figure 2 The DC blocking capacitors C1, C2, C3, and C4 in the circuit are used to transmit the differential signal input from the input port to the gates of the amplifying MOS tube and the auxiliary MOS tube after passing through the DC blocking capacitors C1, C2, C3, and C4; the bias signal input circuit is used to input bias signals to the gates of the amplifying MOS tube and the auxiliary MOS tube.

[0048] In specific implementation, the DC blocking capacitor in the embodiment of the present invention is also a fixed capacitor. In addition, the bias signal input circuit is respectively arranged at the gate of the amplifying MOS tube and the auxiliary MOS tube; and Figure 2 As shown, the bias signal input circuit includes a pull-up resistor and a bias signal source; wherein one end of the pull-up resistor is connected to the gate of the amplifying MOS tube or the auxiliary MOS tube, and the other end is connected to the bias signal source.

[0049] Specifically, Figure 2 As shown, resistors R1, R2, R3, and R4 are pull-up resistors, respectively, and VBIAS1 and VBIAS12 represent bias signal sources corresponding to the amplifying MOS tube and the auxiliary MOS tube, respectively. Usually, the bias signal sources VBIAS1 and VBIAS12 are different, so that the voltage bias of the auxiliary MOS tube and the amplifying MOS tube is different. In specific implementation, the bias signal source can be implemented by a bias module integrated inside the RF power amplifier, or provided by an external signal source, which is subject to actual use, and the embodiment of the present invention is not limited to this.

[0050] Depend on Figure 2 It can be seen that the RF power amplifier in the embodiment of the present invention is composed of the following devices: a first amplifying MOS tube M1 and a second amplifying MOS tube M3, a first auxiliary MOS tube M2 and a second auxiliary MOS tube M4, DC blocking capacitors C1, C2, C3, C4, resistors R1, R2, R3, R4, a first auxiliary capacitor C5 and a second auxiliary capacitor C6.

[0051] and, Figure 2 In the embodiment, the source electrodes of the first amplifying MOS tube M1 and the second amplifying MOS tube M3 are grounded, the source electrodes of the first auxiliary MOS tube M2 and the second auxiliary MOS tube M4 are also grounded, the drain electrodes of the first amplifying MOS tube M1 and the first auxiliary MOS tube M2 are connected together, and the drain electrodes of the second amplifying MOS tube M3 and the second auxiliary MOS tube M4 are connected together. The input RF differential signal enters through the VIP / VIN input port, and is connected to the gate electrodes of the first amplifying MOS tube M1, the second amplifying MOS tube M3, the first auxiliary MOS tube M2, and the second auxiliary MOS tube M4 through the DC blocking capacitors C1-C4. The bias signal source is the bias voltage VBIAS1 and VBIAS2, which are connected to the gate electrodes of the first amplifying MOS tube M1, the second amplifying MOS tube M3, the first auxiliary MOS tube M2, and the second auxiliary MOS tube M4 through the resistors R1-R4. One end of the first auxiliary capacitor C5 and the second auxiliary capacitor C6 are grounded, and the other end is connected to the gate electrodes of the first amplifying MOS tube M1 and the second amplifying MOS tube M3.

[0052] based on Figure 2The RF power amplifier shown in the figure, observed from the input port VIP / VIN of the RF differential signal, can be divided into fixed capacitors and variable capacitors. The first amplifying MOS tube M1 and the second amplifying MOS tube M3 work in the saturation region, and their gate-source parasitic capacitance is a fixed capacitor, and the DC blocking capacitors C1-C4 are also fixed capacitors, and the fixed capacitors do not contribute to nonlinearity.

[0053] The first auxiliary MOS tube M2 and the second auxiliary MOS tube M4 operate in the subthreshold region, and their gate-source parasitic capacitance changes with the input RF differential signal, and is a variable capacitor, which contributes to nonlinearity. In the embodiment of the present invention, the fixed capacitance value can be increased to increase the proportion of the fixed capacitor, thereby reducing the proportion of the variable capacitance relative to the capacitance change value, thereby reducing the influence of the variable capacitance and improving the third-order nonlinearity of the RF power amplifier.

[0054] Specifically, the first auxiliary capacitor C5 and the second auxiliary capacitor C6 are fixed capacitors, that is, fixed capacitors, and their function is to increase the proportion of fixed capacitors to reduce the influence of the nonlinearity of the gate-source parasitic capacitance of the first auxiliary MOS tube M2 and the second auxiliary MOS tube M4, thereby achieving the purpose of improving the third-order nonlinearity of the RF power amplifier.

[0055] Moreover, the first auxiliary capacitor C5 and the second auxiliary capacitor C6 do not occupy much area, nor introduce additional power consumption, and the cost is very small.

[0056] In specific implementation, the first auxiliary capacitor C5 and the second auxiliary capacitor C6 need to be set to appropriate values ​​according to the actual working conditions. If the values ​​are too small, the improvement effect of the third-order nonlinearity is not very obvious. If the values ​​are too large, the gain of the RF power amplifier will decrease due to the equivalent resistance voltage divider effect of the DC isolation capacitor and the first auxiliary capacitor C5 and the second auxiliary capacitor C6, and its OIP3 will decrease instead. Therefore, the capacitance values ​​of the first auxiliary capacitor C5 and the second auxiliary capacitor C6 need to be set according to the actual working conditions, and the embodiment of the present invention does not limit this.

[0057] Furthermore, the first auxiliary capacitor and the second auxiliary capacitor in the embodiment of the present invention are adjustable capacitors. For example, the first auxiliary capacitor C5 and the second auxiliary capacitor C6 can be made into a capacitor array adjustable mode, so that the capacitance values ​​of the first auxiliary capacitor C5 and the second auxiliary capacitor C6 can be controlled by the SPI signal.

[0058] Specifically, Figure 4 Another circuit diagram of a radio frequency power amplifier is shown. Figure 4As shown, the first auxiliary capacitor C5 and the second auxiliary capacitor C6 are adjustable in multiple gears. At this time, the curve of the third-order nonlinear index OIP3 of the RF power amplifier as the size of the first auxiliary capacitor C5 and the second auxiliary capacitor C6 changes is as shown in FIG. Figure 5 As shown, Figure 5 In FIG. 1 , C5 and C6 on the horizontal axis represent the first auxiliary capacitor C5 and the second auxiliary capacitor C6 respectively. Figure 5 It can be seen that when the first auxiliary capacitor C5 and the second auxiliary capacitor C6 are in the middle range of 350-400F, the OIP3 index of the RF power amplifier is significantly improved.

[0059] In summary, in the embodiment of the present invention, by additionally adding a first auxiliary capacitor C5 and a second auxiliary capacitor C6 to the RF power amplifier, the third-order nonlinearity of the RF power amplifier is effectively improved without increasing the additional transistor area and additional power consumption, so that the RF power amplifier has better linearity, thereby meeting the design requirements of low power consumption and improving the utilization efficiency of the RF power amplifier.

[0060] Furthermore, an embodiment of the present invention also provides an electronic device, wherein the electronic device is equipped with the radio frequency power amplifier described in the above embodiment.

[0061] The electronic device provided in the embodiment of the present invention has the same technical features as the RF power amplifier provided in the above embodiment, so it can also solve the same technical problems and achieve the same technical effects.

[0062] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the electronic device described above can refer to the corresponding process in the aforementioned embodiment, and will not be repeated here.

[0063] In addition, in the description of the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal communication of two components. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0064] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc., which can store program codes.

[0065] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0066] Finally, it should be noted that the above embodiments are only specific implementations of the present invention, which are used to illustrate the technical solutions of the present invention, rather than to limit them. The protection scope of the present invention is not limited thereto. Although the present invention is described in detail with reference to the above embodiments, those skilled in the art should understand that any person skilled in the art can still modify the technical solutions recorded in the above embodiments within the technical scope disclosed by the present invention, or can easily think of changes, or make equivalent replacements for some of the technical features therein; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A radio frequency power amplifier, characterized in that: include: An input port, a bias circuit, an amplifier circuit and an output port connected in sequence; The amplifying circuit comprises an amplifying MOS tube and an auxiliary MOS tube matched with the amplifying MOS tube; The source electrodes of the amplifying MOS tube and the auxiliary MOS tube are grounded; the drain electrodes of the amplifying MOS tube and the auxiliary MOS tube are connected and connected to the output port; the gate electrodes of the amplifying MOS tube and the auxiliary MOS tube are respectively connected to the input port via the bias circuit; Wherein, the amplifier circuit is also configured with an auxiliary capacitor circuit; One end of the auxiliary capacitor circuit is connected to the gate of the amplifying MOS tube, and the other end is grounded; The input port is a differential signal input port, including a first input terminal and a second input terminal; The amplifying MOS transistor comprises a first amplifying MOS transistor corresponding to the first input end and a second amplifying MOS transistor corresponding to the second input end; The auxiliary MOS transistor comprises a first auxiliary MOS transistor corresponding to the first input terminal and a second auxiliary MOS transistor corresponding to the second input terminal; The auxiliary capacitor circuit includes a first auxiliary capacitor corresponding to the first amplifying MOS transistor, and a second auxiliary capacitor corresponding to the second amplifying MOS transistor; One end of the first auxiliary capacitor is connected to the gate of the first amplifying MOS tube, and the other end is grounded; One end of the second auxiliary capacitor is connected to the gate of the second amplifying MOS tube, and the other end is grounded.

2. The radio frequency power amplifier according to claim 1, characterized in that: The first auxiliary capacitor and the second auxiliary capacitor are fixed capacitors.

3. The radio frequency power amplifier according to claim 1, characterized in that: The first auxiliary capacitor and the second auxiliary capacitor are adjustable capacitors.

4. The radio frequency power amplifier according to claim 1, characterized in that: The amplifying MOS tube and the auxiliary MOS tube are NMOS tubes.

5. The radio frequency power amplifier according to claim 4, characterized in that: The amplifying MOS tube operates in a saturation region; the auxiliary MOS tube operates in a subthreshold region.

6. The radio frequency power amplifier according to claim 1, characterized in that: The bias circuit comprises a bias unit connected to the first input terminal and the second input terminal respectively; The bias unit includes a DC blocking capacitor and a bias signal input circuit; The DC blocking capacitor is arranged on the connection path from the input port to the gates of the amplifying MOS tube and the auxiliary MOS tube, and the differential signal input from the input port is transmitted to the gates of the amplifying MOS tube and the auxiliary MOS tube after passing through the DC blocking capacitor; The bias signal input circuit is used to input bias signals to the gates of the amplifying MOS tube and the auxiliary MOS tube.

7. The radio frequency power amplifier according to claim 6, characterized in that: The DC blocking capacitor is a fixed capacitor.

8. The radio frequency power amplifier according to claim 6, characterized in that: The bias signal input circuit is respectively arranged at the gates of the amplifying MOS tube and the auxiliary MOS tube; Wherein, the bias signal input circuit includes a pull-up resistor and a bias signal source; One end of the pull-up resistor is connected to the gate of the amplifying MOS transistor or the auxiliary MOS transistor, and the other end is connected to the bias signal source.

9. An electronic device, characterized in that: The electronic device is equipped with the radio frequency power amplifier according to any one of claims 1 to 8.

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