Method for manufacturing display panel and display panel

Abstract

The present application discloses a manufacturing method and a display panel of a display panel. Among them, the method includes: providing an array substrate; a plurality of pixel anodes are disposed on the surface of the array substrate; covering the surface of the array substrate with an inorganic thin film; manufacturing a plurality of conductive partition structures on the surface of the inorganic thin film; wherein, the conductive partition structure includes a cathode conductive layer and a pixel partition layer; removing the inorganic thin film between two adjacent conductive partition structures to expose the pixel anodes on the surface of the array substrate; manufacturing a cathode connection layer at a position between two adjacent conductive partition structures and close to the conductive partition structure; sequentially depositing an organic light-emitting layer and a pixel cathode between two adjacent conductive partition structures, and making the pixel cathode contact and connect with the cathode conductive layer in the conductive partition structure through the cathode connection layer. Through the above structure, the cathode connection problem is improved.

Description

Technical Field

[0001] The present invention relates to the field of display technologies, and particularly to a method for manufacturing a display panel and a display panel. Background Art

[0002] OLED (Organic Light Emitting Diode) display panels have many advantages such as all-solid state, active light emission, high brightness, high contrast ratio, ultra-thin, low power consumption, no viewing angle limitation, and a wide operating temperature range, and have received increasing attention.

[0003] In the application of the maskless process, in the original PFA process, the organic pixel definition layer is changed to an inorganic thin film process, which can better block the intrusion of water and oxygen. Therefore, the inorganic thin film process for manufacturing the pixel definition layer has been increasingly widely used.

[0004] Since the inorganic thin film is used as the pixel definition layer, the dry etching angle is difficult to control, resulting in problems that are difficult to control in the overlapping angle and overlapping height between the inorganic thin film and the pixel cathode, and further resulting in problems of poor overlapping of the pixel cathode. Summary of the Invention

[0005] The main technical problem to be solved by this application is to provide a method for manufacturing a display panel and a display panel, which are used to improve the problem of cathode overlapping.

[0006] To solve the above problems, the first technical solution provided by this application is: to provide a method for manufacturing a display panel, including: providing an array substrate; a plurality of pixel anodes are disposed on the surface of the array substrate; covering the surface of the array substrate with an inorganic thin film; manufacturing a plurality of conductive isolation structures on the surface of the inorganic thin film; wherein, the conductive isolation structure includes a cathode conductive layer and a pixel isolation layer; removing the inorganic thin film between two adjacent conductive isolation structures to expose the pixel anodes on the surface of the array substrate; disposing a cathode overlapping layer between two adjacent conductive isolation structures and close to the conductive isolation structures; sequentially depositing an organic light-emitting layer and a pixel cathode between two adjacent conductive isolation structures, so that the pixel cathode is connected to the cathode conductive layer in the conductive isolation structure through the cathode overlapping layer.

[0007] Preferably, the step of manufacturing a plurality of conductive isolation structures on the surface of the inorganic thin film includes: sequentially manufacturing a cathode conductive layer and a pixel isolation layer on the surface of the inorganic thin film between two adjacent pixel anodes to obtain the conductive isolation layer; wherein, the pixel isolation layer is located on the side of the cathode conductive layer away from the array substrate, and the area of the pixel isolation layer in the direction parallel to the plane of the array substrate is larger than the area of the cathode conductive layer.

[0008] Preferably, the inorganic thin film includes SiN, SiON, SiO, and AL2O3.

[0009] Preferably, the cathode conductive layer includes a metal stack structure; the cathode conductive layer includes one or more metal layers of Ti, AL, and MO.

[0010] Preferably, the step of removing the inorganic thin film between two adjacent conductive partition structures includes: removing the inorganic thin film on at least the surface of the pixel anode by using a dry etching process to expose the pixel anode; wherein, there is a height difference between the cathode conductive layer of the partition structure and the pixel anode.

[0011] Preferably, the step of disposing a cathode overlap layer at a position between two adjacent conductive partition structures and close to the conductive partition structures includes: fabricating a cathode overlap layer at a position between the pixel anode and the conductive partition structure to reduce the height difference between the pixel anode and the cathode conductive layer; wherein, the height of the cathode overlap layer is not less than the thickness of the inorganic thin film and not greater than the sum of the thicknesses of the inorganic thin film and the cathode conductive layer.

[0012] Preferably, the height of the cathode overlap layer on the side close to the conductive partition structure is greater than the height on the side close to the pixel anode to form an inclined surface that slopes from the pixel anode towards the cathode conductive layer; the inclination angle of the inclined surface of the cathode overlap layer is between 10 and 45 degrees.

[0013] To solve the above problems, the second technical solution provided by the present application is: a display panel, the display panel includes: an array substrate, on the surface of which a plurality of pixel anodes are exposed; an inorganic pixel definition layer disposed on the surface of the array substrate and exposing a plurality of the pixel anodes to form a pixel opening area; a conductive partition structure disposed on the surface of the inorganic pixel definition layer, including a cathode conductive layer and a pixel partition layer; a cathode overlap layer disposed between the conductive partition structure and the pixel anode on the surface of the array substrate; an organic light-emitting layer covering the surface of the pixel anode and the surface of the cathode overlap layer; a pixel cathode covering the surface of the organic light-emitting layer and in contact connection with the cathode conductive layer of the conductive partition structure.

[0014] Preferably, the height of the cathode overlap layer is greater than the thickness of the inorganic pixel definition layer and less than the sum of the thicknesses of the inorganic pixel definition layer and the cathode conductive layer.

[0015] Preferably, the height of the cathode overlapping layer on the side close to the conductive partition structure is greater than the height on the side close to the pixel anode, so as to form an inclined surface inclined from the pixel anode to the cathode conductive layer direction; the inclination angle of the inclined surface of the cathode overlapping layer is between 10 and 45 degrees.

[0016] The beneficial effect of the present application is that by arranging a cathode overlapping layer between the conductive partition structure and the pixel anode, the height difference between the pixel anode and the cathode conductive layer is reduced through the cathode overlapping layer, so as to facilitate the subsequent overlapping of the pixel cathode and the cathode conductive layer fabricated on the surface of the pixel anode, thereby improving the problem of poor overlapping of the pixel cathode. Brief Description of the Drawings

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0018] Figure 1 It is a schematic flowchart of an embodiment of the manufacturing method of the display panel of the present application;

[0019] Figure 2 It is a schematic structural diagram of the first specific embodiment of the display panel of the present application;

[0020] Figure 3 It is a schematic structural diagram of the second embodiment of the display panel of the present application;

[0021] Figure 4 It is a schematic structural diagram of the third embodiment of the display panel of the present application.

[0022] 10 Array substrate; 11 Pixel anode; 20 Inorganic pixel definition layer; 30 Conductive partition structure; 31 Cathode conductive layer; 32 Pixel partition layer; 40 Cathode overlapping layer; 50 Organic light-emitting layer; 60 Pixel cathode. Detailed Embodiments

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0024] The terms used in the embodiments of the present application are for the purpose of describing specific embodiments only and are not intended to limit the present application. The singular forms "a", "the", and "said" used in the embodiments of the present application and the appended claims are also intended to include the plural forms, unless clearly indicated otherwise in the context. "Plural" generally includes at least two, but does not exclude the case of including at least one.

[0025] It should be understood that the term "and / or" used herein is only an associative relationship describing associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " herein generally represents an "or" relationship between the associated objects before and after. The terms "first", "second", etc. in the specification, claims, and the above-mentioned drawings of the present application are used to distinguish similar objects and do not necessarily describe a specific order or sequence.

[0026] It should be understood that the term "comprising", "including", or any other variation used herein is intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such a process, method, article, or device. Without further limitation, the elements defined by the statement "comprising..." do not exclude the existence of additional identical elements in the process, method, article, or device comprising the said elements.

[0027] It should be noted that if there are directional indications (such as up, down, left, right, front, back...) involved in the embodiments of the present application, then such directional indications are only used to explain the relative positional relationship, movement conditions, etc. between components in a specific posture (as shown in the drawings). If the specific posture changes, then the directional indications will also change accordingly.

[0028] Referring to "embodiment" herein means that the specific features, structures, or characteristics described in connection with the embodiment can be included in at least one embodiment of the present application. The appearance of this phrase at each position in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0029] The present application provides a method for manufacturing a display panel. Specifically, please refer to Figure 1 , Figure 1 , which is a schematic flowchart of an embodiment of the method for manufacturing the display panel of the present application. As Figure 1 shown, the manufacturing method includes:

[0030] Step S11: Provide an array substrate.

[0031] Among them, a plurality of spaced pixel anodes are provided on the surface of the array substrate. Specifically, a pixel circuit (also known as a TFT circuit) is further provided inside the array substrate. Among them, the pixel anode is exposed on the surface of the array substrate, and each pixel anode is connected to the pixel circuit through a via, which is not limited herein.

[0032] Step S12: Cover the surface of the array substrate with an inorganic thin film.

[0033] Among them, the inorganic thin film includes SiN, SiON, SiO, AL2O3, etc., which is not limited herein.

[0034] This step specifically includes: covering the surfaces of the plurality of pixel anodes on the array substrate and the surface of the region between the plurality of pixel anodes, that is, covering the entire surface of the array substrate. Among them, the inorganic thin film covers the surface of the pixel anode. On the one hand, it prevents the etching process in the subsequent fabrication of the cathode conductive layer and the pixel isolation layer from damaging the anode. On the other hand, the inorganic thin film is provided between the plurality of pixel anodes and on the surface of some pixel anodes, which is convenient for the subsequent formation of an inorganic pixel definition layer (that is, provided in the non-display area of the pixel unit). By using the inorganic thin film instead of the organic pixel definition layer, it can block the intrusion of water and oxygen and play a role in protecting the OLED pixels.

[0035] Step S13: Fabricate a plurality of conductive isolation structures on the surface of the inorganic thin film.

[0036] Among them, the conductive isolation structure includes a cathode conductive layer and a pixel isolation layer. The cathode conductive layer can be a metal stack structure or a single-layer metal layer, which is used to connect the pixel cathodes of two adjacent sub-pixels, thereby connecting the pixel cathodes of the entire panel. Specifically, the cathode conductive layer can include a metal stack structure formed by one or more metals such as Ti, AL, MO (not limited to), and has good electrical conductivity. The pixel isolation layer can be made of an inorganic thin film, metal, or organic PFA material.

[0037] Specifically, it includes: sequentially fabricating a cathode conductive layer and a pixel isolation layer on the surface of the inorganic thin film between two adjacent pixel anodes to obtain a conductive isolation structure. That is, fabricating a conductive isolation structure on the surface of the inorganic thin film between two adjacent pixel anodes.

[0038] This step specifically includes: fabricating a cathode conductive layer on the entire surface of the inorganic thin film, etching away the cathode conductive layer in the pixel opening region (at least part of the pixel anode surface) using an etching process, then fabricating a pixel partition layer on the surface of the cathode conductive layer, and etching away the pixel partition layer in the pixel opening region (at least part of the pixel anode surface) using an etching process, thereby obtaining a conductive partition structure including the cathode conductive layer and the pixel partition layer. Among them, the pixel partition layer is located on the side of the cathode conductive layer away from the array substrate, and the area of the pixel partition layer in the direction parallel to the plane of the array substrate is larger than the area of the cathode conductive layer to form an eaves structure, thus facilitating the evaporation of the organic light-emitting layer and the pixel cathode in the pixel opening region.

[0039] Step S14: Remove the inorganic thin film between two adjacent conductive partition structures to expose the pixel anode on the surface of the array substrate.

[0040] This step specifically includes: etching away the inorganic thin film on at least part of the pixel anode surface using a dry etching process to expose at least part of the pixel anode.

[0041] In the first specific embodiment, all the inorganic thin film between two adjacent conductive partition structures is removed, and only the inorganic thin film under the conductive partition structure is retained. In this specific embodiment, part of the array substrate may also be exposed between the pixel anode and the inorganic thin film.

[0042] In the second specific embodiment, part of the inorganic thin film on the pixel anode surface between two adjacent conductive structures can also be removed. There is no limitation here.

[0043] In this embodiment, there is a height difference between the pixel anode and the cathode conductive layer in the conductive partition structure, and this height difference is formed by the inorganic thin film layer. In a specific implementation manner, preferably, the height (thickness) of the inorganic thin film > 0.5um. Preferably, the height (thickness) of the cathode conductive layer is greater than 1um. Preferably, the height (thickness) of the pixel partition layer is between 0.1 and 0.5um.

[0044] Step S15: Fabricate a cathode connection layer at a position between two adjacent conductive partition structures and close to the conductive partition structure.

[0045] This step specifically includes: fabricating a cathode connection layer at the position between the pixel anode and the conductive partition structure, thereby reducing the height difference between the pixel anode and the cathode conductive layer.

[0046] In the above first specific embodiment, when the pixel anode and the inorganic thin film are spaced apart, that is, part of the array substrate is exposed between them, this step specifically includes: fabricating a cathode connection layer on the surface of the array substrate between the pixel anode and the conductive partition structure.

[0047] In the above second specific embodiment, that is, the inorganic thin film covers part of the pixel anode surface and exposes part of the pixel anode. Then, this step S15 specifically includes: fabricating a cathode overlapping layer on the surface of the pixel anode close to the conductive partition structure. That is, fabricating a cathode overlapping layer on part of the surface of the pixel anode and ensuring that part of the pixel anode is still exposed to form the anode of the pixel light-emitting region.

[0048] Among them, the height of the cathode overlapping layer is not less than the thickness of the inorganic thin film and not greater than the sum of the thicknesses of the inorganic thin film and the cathode conductive layer. Thus, it is ensured that the pixel cathode subsequently disposed on the surface of the cathode overlapping layer can form an overlap (contact connection) with the cathode conductive layer. Among them, the sum of the thicknesses of the organic light-emitting layer and the pixel cathode is less than the thickness of the cathode overlapping layer. Preferably, the thickness of the cathode conductive layer is greater than 1 um. In this specific embodiment, the height of the cathode overlapping layer on the side close to the conductive partition structure is not less than the thickness of the inorganic thin film and less than the sum of the thicknesses of the inorganic thin film and the cathode conductive layer, and the height on the side away from the conductive partition structure can be less than the thickness of the inorganic thin film.

[0049] Among them, the height of the cathode overlapping layer on the side close to the conductive partition structure is greater than the height on the side away from the conductive partition structure (that is, the side close to the pixel anode).

[0050] In a specific embodiment, the cathode overlapping layer includes an inclined surface that slopes from the pixel anode towards the cathode conductive layer. That is, the cathode overlapping layer is of an inclined surface structure or a right trapezoidal structure. The surface of the cathode overlapping layer is an inclined surface. Preferably, the inclination angle of the inclined surface of the cathode overlapping layer is between 10 and 45 degrees, which can effectively solve the problem of poor overlap between the pixel cathode and the cathode conductive layer caused by the thin evaporation material and the weak climbing ability of the subsequent inorganic material for thin film encapsulation, thereby ensuring that there is no influence on the overlap between the pixel cathode and the cathode conductive layer and no crack phenomenon occurs in the encapsulation.

[0051] In another specific embodiment, the cathode overlapping layer can also be a stepped structure, including one-step, two-step, and multi-step structures, which are not limited herein. In the one-step structure, the height of the cathode overlapping layer on the side close to the conductive partition structure is equal to the height on the side away from the conductive partition structure, and the height of the cathode overlapping layer is between the thicknesses of the inorganic thin films, that is, not higher than the inorganic thin film, so as to appropriately raise the pixel cathode and reduce the height difference between the pixel cathode and the cathode conductive layer; preferably, the height of the cathode overlapping layer is half of the thickness of the inorganic thin film. In the two-step and multi-step structures, the height of the steps of the cathode overlapping layer on the side close to the conductive partition structure is successively greater than the height of the steps on the side away from the conductive partition structure. Preferably, the height of the cathode overlapping layer on the side close to the conductive partition layer is the same as the thickness of the inorganic thin film, or can be slightly higher than the thickness of the inorganic thin film.

[0052] Preferably, the height of the cathode overlap layer is between 0.5 and 2 μm. Among them, the thicknesses of the inorganic thin film and the cathode conductive layer exceed 2 μm, and no specific limitation is made.

[0053] This step S15 specifically includes: using a yellow light coating process to coat a cathode overlap material with an area smaller than the pixel area at a position close to the conductive isolation structure, and then gradually etching or stepwise etching the cathode overlap layer to form a cathode overlap layer (also referred to as a cathode overlap structure). Among them, since cathode overlap layers need to be provided on both sides of the sub-pixel, preferably, the area of the cathode overlap layer is smaller than half of the pixel area.

[0054] Step S16: Evaporate an organic light-emitting layer and a pixel cathode in sequence between two adjacent conductive isolation structures, and make the pixel cathode contact and connect with the cathode conductive layer in the conductive isolation structure through the cathode overlap layer.

[0055] Specifically, it includes: evaporating an organic light-emitting layer and a pixel cathode in sequence on the surface of the pixel anode and the cathode overlap layer. The organic light-emitting layer and the pixel cathode cover the surface of the pixel anode in the pixel opening area and the surface of the cathode overlap layer, and even cover the surface of part of the unetched inorganic thin film, and no limitation is made here.

[0056] Among them, the organic light-emitting layer is located between the pixel anode and the pixel cathode.

[0057] In this embodiment, the pixel cathode is raised by the cathode overlap layer, thereby improving the overlap reliability between the pixel cathode and the cathode conductive layer in the conductive isolation structure, and thus improving the overlap problem of the pixel cathode.

[0058] This application also provides a display panel. For details, please refer to Figure 2 , Figure 2 is a schematic structural diagram of the first specific embodiment of the display panel of this application. As Figure 2 shown, the display panel includes: an array substrate 10, and a plurality of pixel anodes 11 are exposed on the surface of the array substrate 10.

[0059] An inorganic pixel definition layer 20 is provided on the surface of the array substrate 10 and exposes a plurality of pixel anodes 11 to form pixel openings. Among them, it may expose the entire pixel anode 11, or may expose a part of the plurality of pixel anodes 11. Among them, the inorganic pixel definition layer 20 is formed by the inorganic thin film in the above method embodiment.

[0060] A conductive isolation structure 30 is provided on the surface of the inorganic pixel definition layer 20. Among them, the conductive isolation structure 30 includes a cathode conductive layer 31 and a pixel isolation layer 32.

[0061] The cathode overlapping layer 40 is disposed between two adjacent conductive partition structures 30 and at a position close to the conductive partition structure 30. In a specific embodiment, when the inorganic pixel defining layer 20 is spaced apart from the pixel anode 11 and a part of the array substrate 10 is exposed; the cathode overlapping layer 40 is disposed on the surface of the array substrate 10 between the conductive partition structure 30 and the pixel anode 11. Wherein, the area of the cathode overlapping layer 40 is smaller than the area of the pixel opening. The pixel opening refers to the opening on the surface of the array substrate 10 exposed by the inorganic pixel defining layer 20, including exposing all or part of the pixel anode 11 and part of the array substrate 10, etc., which is not limited herein.

[0062] The organic light-emitting layer 50 covers the surface of the pixel anode 11 and the surface of the cathode overlapping layer 40 between two adjacent conductive partition structures 30.

[0063] The pixel cathode 60 covers the surface of the organic light-emitting layer 50 and is in contact connection with the cathode conductive layer 31 of the conductive partition structure 30.

[0064] In this embodiment, the height of the cathode overlapping layer 40 at a position close to the conductive partition structure 30 is not less than the thickness of the inorganic pixel defining layer 20 and not greater than the sum of the thicknesses of the inorganic pixel defining layer 20 and the cathode conductive layer 31.

[0065] In this embodiment, the height of the cathode overlapping layer 40 on the side close to the conductive partition structure 30 is greater than the height on the side close to the pixel anode 11, forming an inclined surface inclined from the pixel anode 11 to the cathode conductive layer 31. Further, the inclination angle of this inclined surface is preferably between 10 and 45 degrees, which can avoid an excessive inclined surface, thereby reducing the difficulty of creeping waves of the pixel cathode 60 and improving the reliability of the overlap of the pixel cathode 60, and solving the problem of poor cathode overlap.

[0066] In this embodiment, the cathode overlapping layer 40 is disposed on the surface of the array substrate 10 between the conductive partition structure 30 and the pixel anode 11.

[0067] Further, please refer to Figure 3 , Figure 3 which is a schematic structural diagram of the second embodiment of the display panel of the present application. As Figure 3 shown, the inorganic pixel defining layer 20 covers the surface of a part of the pixel anode 11, and the cathode overlapping layer 40 is disposed on a part of the surface of the pixel anode 11 close to the conductive partition structure 30. The height of the cathode overlapping layer 40 at a position close to the conductive partition structure 30 is not less than the thickness of the inorganic pixel defining layer 20 and not greater than the sum of the thicknesses of the inorganic pixel defining layer 20 and the cathode conductive layer 31. Preferably, the height of the cathode overlapping layer 40 at a position close to the conductive partition structure 30 is equal to the thickness of the inorganic pixel defining layer 20. In this embodiment, preferably, the cathode overlapping layer 40 is a right triangle including an inclined surface, which is not limited herein.

[0068] Further, please refer to Figure 4 , Figure 4 , which is a schematic structural diagram of the third embodiment of the display panel of the present application. As Figure 4 shown, the cathode overlap layer 40 can also be a stepped structure, including a first-order step, a second-order step, and multiple-order steps, etc., which are not limited herein. Among them, the step of the cathode overlap layer 40 close to the conductive isolation structure 30 is higher than the step far from the conductive isolation structure 30, thereby reducing the direct creeping height of the pixel cathode 60.

[0069] The beneficial effect of the present application is that by arranging a cathode overlap layer between the conductive isolation structure and the pixel anode, the height difference between the pixel anode and the cathode conductive layer is reduced through the cathode overlap layer, so as to facilitate the subsequent overlap of the pixel cathode formed on the surface of the pixel anode and the cathode conductive layer, thereby improving the problem of poor overlap of the pixel cathode.

[0070] The above are only the embodiments of the present application, and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present application.

Claims

1. A method for manufacturing a display panel, characterized in that, The method includes: Providing an array substrate; a plurality of pixel anodes are disposed on the surface of the array substrate; Covering the surface of the array substrate with an inorganic thin film; Successively fabricating a cathode conductive layer and a pixel isolation layer on the surface of the inorganic thin film between two adjacent pixel anodes to obtain a conductive isolation structure; wherein, the pixel isolation layer is located on a side of the cathode conductive layer away from the array substrate, and an area of the pixel isolation layer in a direction parallel to a plane of the array substrate is greater than an area of the cathode conductive layer; Removing the inorganic thin film between two adjacent conductive isolation structures and exposing the pixel anodes on the surface of the array substrate to form pixel openings; wherein, a height difference exists between the pixel anode and the cathode conductive layer; Coating a cathode bridging material with an area smaller than an area of the pixel opening in the pixel opening near the conductive isolation structure by using a yellow light coating process; wherein, the pixel opening refers to an opening on a surface of the array substrate or the pixel anode exposed by the inorganic thin film; Gradually etching the cathode bridging material to form a cathode bridging layer; wherein, a height of the cathode bridging layer on a side close to the conductive isolation structure is greater than a height on a side away from the conductive isolation structure; the height of the cathode bridging layer on the side close to the conductive isolation structure is not less than a thickness of the inorganic thin film and not greater than a sum of the thicknesses of the inorganic thin film and the cathode conductive layer; Successively depositing an organic light-emitting layer and a pixel cathode between two adjacent conductive isolation structures, and enabling the pixel cathode to be in contact connection with the cathode conductive layer in the conductive isolation structure through the cathode bridging layer.

2. The manufacturing method of the display panel according to claim 1, wherein, The inorganic thin film includes SiN, SiON, SiO, and AL2O3.

3. The manufacturing method of the display panel according to claim 1, wherein, The cathode conductive layer includes a metal stack structure; the cathode conductive layer includes one or more metal layers of Ti, AL, and MO.

4. The manufacturing method of the display panel according to claim 1, wherein, The step of removing the inorganic thin film between two adjacent conductive isolation structures includes: Removing at least the inorganic thin film on the surface of the pixel anode by using a dry etching process to expose the pixel anode.

5. The manufacturing method of the display panel according to claim 1, characterized in that The cathode bridging layer includes an inclined surface inclined from the pixel anode towards the cathode conductive layer; an inclination angle of the inclined surface of the cathode bridging layer is between 10 and 45 degrees.

6. A display panel, characterized in that, The display panel includes: An array substrate, on which a plurality of pixel anodes are exposed on the surface; An inorganic pixel definition layer, disposed on the surface of the array substrate and exposing a plurality of the pixel anodes to form a pixel opening area; A conductive isolation structure, disposed on the surface of the inorganic pixel definition layer, including a cathode conductive layer and a pixel isolation layer, the pixel isolation layer is located on a side of the cathode conductive layer away from the array substrate, and an area of the pixel isolation layer in a direction parallel to a plane of the array substrate is greater than an area of the cathode conductive layer; wherein, a height difference exists between the cathode conductive layer and the pixel anode; The cathode overlapping layer is disposed in the pixel opening area near the position of the conductive partition structure; wherein, the height of the cathode overlapping layer on the side close to the conductive partition structure is greater than the height on the side close to the pixel anode; the height of the cathode overlapping layer on the side close to the conductive partition structure is not less than the thickness of the inorganic pixel definition layer and not greater than the sum of the thicknesses of the inorganic pixel definition layer and the cathode conductive layer; the area of the cathode overlapping layer is smaller than the area of the pixel opening area; The organic light-emitting layer covers the surface of the pixel anode and the surface of the cathode overlapping layer; The pixel cathode covers the surface of the organic light-emitting layer and is in contact connection with the cathode conductive layer of the conductive partition structure.

7. The display panel according to claim 6, wherein The cathode overlapping layer includes an inclined surface that slopes from the pixel anode towards the cathode conductive layer; the inclination angle of the inclined surface of the cathode overlapping layer is between 10 and 45 degrees.

Images