A loading rack for batch annealing of silicon carbide wafers and an annealing furnace tube

Abstract

The application discloses a feeding rack for batch annealing of silicon carbide wafers and an annealing furnace tube, which comprises a bearing frame installed on a top plate of a moving frame and a blocking and slowing unit installed on the bearing frame; a plurality of limiting rod groups are arranged in a linear type and at equal intervals on the bearing frame, each of the limiting rod groups comprises two limiting rods arranged oppositely and at intervals, a supporting bottom plate is arranged obliquely below the plurality of limiting rod groups, the front end of the supporting bottom plate is rotationally connected to the upper end of the moving frame, the rear end of the supporting bottom plate passes through a movable opening arranged on the bearing frame, and an upper blocking column and a lower blocking column are arranged in a vertical type on the inner cavity wall of the movable opening of the bearing frame. The feeding rack is used in cooperation with the annealing furnace tube, can facilitate the batch feeding operation of the operator, can apply different blocking and slowing forces to the accelerated silicon carbide wafers according to the mass of a single silicon carbide wafer to hinder the movement of the silicon carbide wafers, and can realize the fast, stable and damage-free feeding operation of the silicon carbide wafers.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a feeding rack and annealing furnace tube for batch annealing of silicon carbide wafers. Background Technology

[0002] Annealing is a common step in the production and manufacturing process of silicon carbide wafers. Annealing can effectively eliminate or reduce these structural defects and micro-stresses, and improve the crystal quality and performance stability of silicon carbide wafers.

[0003] When annealing silicon carbide wafers using a horizontally arranged annealing furnace tube (with a circular hot chamber inside and wafer placement slots on the inner wall of the chamber), the wafers in the basket need to be manually placed one by one into the wafer placement slots of the annealing furnace tube before annealing. Generally, there are 25 to 40 wafer placement slots in the annealing furnace tube. Manually loading one wafer at a time is time-consuming and labor-intensive. Therefore, this application provides a loading rack and annealing furnace tube for batch annealing of silicon carbide wafers to meet the requirements. Summary of the Invention

[0004] The purpose of this application is to provide a feeding rack and annealing furnace tube for batch annealing of silicon carbide wafers, in order to solve the technical problem of time-consuming and labor-intensive manual single-wafer feeding in the present invention.

[0005] To achieve the above objectives, this application provides the following technical solution: a loading rack for batch annealing of silicon carbide wafers, comprising a support frame mounted on the top plate of a movable frame and a damping unit mounted on the support frame;

[0006] The support frame is provided with multiple limit rod groups arranged in a straight line at equal intervals. Each limit rod group includes two limit rods that are opposite to each other and spaced apart. A support base plate is inclinedly arranged below the multiple limit rod groups. The front end of the support base plate is rotatably connected to the upper end of the movable frame. The rear end of the support base plate passes through the support frame and is provided with a movable opening. An upper blocking post and a lower blocking post are arranged vertically on the inner wall of the movable opening of the support frame.

[0007] The number of the limiting rod groups is the same as the number of wafer limiting slots provided in the inner cavity of the annealing furnace tube, and the gap between the two limiting rods corresponds to the wafer limiting slots.

[0008] The damping unit is located near the front end of the support base plate. The damping unit can apply different damping forces according to the mass of a single silicon carbide wafer to hinder the movement of the accelerated silicon carbide wafer.

[0009] In a preferred embodiment of this invention, the damping unit includes damping airbags installed in the front grooves of the two limiting rods in the limiting rod assembly, and a hollow shell installed at the bottom of the support base plate and near the front end of the support base plate. The hollow shell has multiple lifting plates penetrating the support base plate within its inner cavity. Each lifting plate is located directly below a corresponding pair of limiting rods. Each lifting plate is an isosceles trapezoidal structure, with a vertical rod fixed to its bottom. The vertical rod slides through the limiting plate fixed within the hollow shell's inner cavity. The lower end of the vertical rod is connected to the extrusion plate via a connector, and the extrusion plate contacts the extrusion airbag. The extrusion airbag is fixedly installed inside a hollow cylinder within the hollow shell's inner cavity. The extrusion plate slides within the hollow cylinder. The extrusion airbag is connected to an externally located air collection pipe via a connecting pipe, and the air collection pipe is connected to the corresponding damping airbag via a connecting hose.

[0010] In a preferred embodiment of this invention, the front ends of the plurality of limiting rod groups extend beyond the supporting base plate by a certain distance, and a delay and damping unit is also included. The delay and damping unit includes a U-shaped tube with a ball valve installed and an arc-shaped rack installed on the upper end of the moving frame and adapted to the movement path of the ball valve. A one-way gear that meshes with the arc-shaped rack is installed on the rotating shaft of the ball valve.

[0011] The gas collecting pipe is configured as an I-shaped structure, and a one-way valve is sleeved on the connecting pipe in the middle of the gas collecting pipe. Both ends of the U-shaped pipe are connected to the connecting pipe.

[0012] In a preferred embodiment of this invention, the connector includes a movable arm rotatably disposed within the hollow housing cavity via a pin. The pin is offset to the right of the center of the movable arm. The raised end of the movable arm slides in contact with the lower end of the vertical rod. The right end of the movable arm is movably connected to the extrusion plate via a movable rod.

[0013] In a preferred embodiment of this invention, the top end of the vertical rod is fixedly connected to the lifting plate via an elastic element.

[0014] An annealing furnace tube includes a furnace tube body mounted on a base frame. The circular heating cavity of the furnace tube body has multiple wafer positioning grooves arranged in a straight line at equal intervals. The furnace tube body comprises a first part with a half-circular heating cavity, a second part with a two-fifths semi-circular heating cavity, a third part with a three-fifths semi-circular heating cavity, and two side plates sealing both ends of the circular heating cavity. The third part and the two side plates are fixedly mounted on the base frame. The first part is rotatably mounted on the upper end of the second part via a rotating shaft. A cylinder is fixed to the outer wall of the first part, and the output end of the cylinder is fixedly connected to the outer wall of the second part. The height of the wafer positioning groove at the bottom of the third part is consistent with the height of the front end of the supporting base plate.

[0015] A drive motor is mounted on the base frame. A bevel gear is provided on the output shaft of the drive motor and one end of the rotating shaft, and the two bevel gears are meshed together.

[0016] Both the drive motor and the cylinder are electrically connected to the PLC controller.

[0017] In a preferred embodiment of this invention, the base frame is provided with two sets of guide blocks that are inclined outwards and two blocking blocks that are L-shaped. The two guide blocks are arranged in a figure-eight shape, the shortest straight distance between the two guide blocks is the same as the length of the top plate, and the height of the two blocking blocks is the same as the height of the top plate.

[0018] In summary, the technical effects and advantages of this invention are as follows:

[0019] The present invention has a reasonable structure. This feeding rack is used in conjunction with the annealing furnace tube, which can facilitate the operator to perform batch feeding operations at the same time.

[0020] In this invention, a damping unit is provided at the front end of the support base plate. Different damping forces can be applied according to the mass of a single silicon carbide wafer to hinder the movement of the accelerated silicon carbide wafer, so as to achieve a fast, stable and damage-free feeding operation of silicon carbide wafers.

[0021] In this invention, the front ends of multiple limiting rod groups extend beyond the supporting base plate by a certain distance, and a delay and damping unit is also provided. The damping path is extended, which allows the silicon carbide wafer to move more smoothly into the wafer placement slot, further reducing the collision risk of the silicon carbide wafer. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the overall structure of the feeding rack of the present invention;

[0024] Figure 2 for Figure 1 Schematic diagram of a partial structure of the upper and middle material rack;

[0025] Figure 3 for Figure 1 Schematic diagram of the rear cross-sectional structure of the upper and middle material rack;

[0026] Figure 4 for Figure 3 Schematic diagram of the medium-resistance buffer unit structure;

[0027] Figure 5 for Figure 3 Schematic diagram of the cross-sectional structure of the hollow shell;

[0028] Figure 6 This is a schematic diagram of the overall structure of the annealing furnace tube;

[0029] Figure 7 This is a schematic diagram of the connection structure between the annealing furnace tube and the feeding rack.

[0030] In the diagram: 1. Movable frame; 2. Bearing frame; 3. Support base plate; 4. Limiting rod assembly; 5. Lower blocking column; 6. Upper blocking column; 7. Hollow shell; 8. Lifting plate; 9. Vertical rod; 10. Compression airbag; 11. Air collection pipe; 12. Connecting hose; 13. Slowing airbag; 14. One-way gear; 15. Arc rack; 16. U-tube; 17. Ball valve; 18. One-way valve; 19. Limiting plate; 20. Movable arm; 21. Pin; 22. Movable rod; 23. Compression plate; 24. Side plate; 25. Cylinder; 26. First part; 27. Second part; 28. Bevel gear; 29. ​​Drive motor; 30. Guide block; 31. Elastic element; 32. Blocking block; 33. Third part. Detailed Implementation

[0031] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0032] Example: Reference Figure 1 and Figure 3 The image shows a feeding rack for batch annealing of silicon carbide wafers, including a support frame 2 mounted on the top plate of a movable frame 1 and a damping unit mounted on the support frame 2.

[0033] Multiple limiting rod groups 4 are arranged in a straight line at equal intervals on the support frame 2. Each limiting rod group 4 includes two limiting rods that are opposite to each other and spaced apart. A support base plate 3 is inclinedly arranged below the multiple limiting rod groups 4. The front end of the support base plate 3 is rotatably connected to the upper end of the movable frame 1. The rear end of the support base plate 3 passes through the support frame 2 and is provided with an movable opening. An upper blocking post 6 and a lower blocking post 5 are arranged vertically on the inner wall of the movable opening of the support frame 2.

[0034] The number of limit rod groups 4 is consistent with the number of wafer limiting grooves set in the inner cavity of the annealing furnace tube, and the gap between the two limit rods corresponds to the wafer limiting groove;

[0035] The damping unit is located near the front end of the support base plate 3. The damping unit can apply different damping forces according to the mass of a single silicon carbide wafer to hinder the movement of the accelerated silicon carbide wafer.

[0036] When in use, connect the loading rack fully loaded with silicon carbide wafers to the annealing furnace tube as follows: Figure 7 As shown, after the docking is completed, one end of the support base plate 3 is slowly lifted manually, so that the front end of the support base plate 3 changes from the raised end to the downward-sloping bottom end. At this time, multiple silicon carbide wafers on the support base plate 3 roll down the slope under the action of gravity, and the speed of movement increases. No external resistance is applied at this stage. The purpose is to allow the silicon carbide wafers to pass through this section quickly and speed up the loading operation of silicon carbide wafers. When the silicon carbide wafer passes the deceleration unit set at the front end of the support base plate 3, its weight acts on the deceleration unit, and the deceleration unit applies corresponding resistance to hinder the movement of the silicon carbide wafer, that is, to decelerate the silicon carbide wafer. The wafers are fed into the annealing furnace tube at a low speed to prevent damage caused by violent collisions between the silicon carbide wafers and the furnace tube due to excessive speed. This feeding rack can simultaneously and smoothly feed silicon carbide wafers into the annealing furnace tube without damage. It can also apply corresponding damping according to the weight of the silicon carbide wafers (which come in various sizes, resulting in different weights for each size. During movement, the heavier the object, the greater its inertia. To ensure smooth and damage-free feeding of silicon carbide wafers, the resistance applied to the silicon carbide wafers by the damping unit must be increased accordingly). This achieves smooth and damage-free feeding of silicon carbide wafers.

[0037] It should be noted that when the supporting base plate 3 rotates upward, it stops moving after contacting the upper blocking post 6.

[0038] As a preferred embodiment of this example, Figure 2-5 As shown, the damping unit includes damping airbags 13 installed in the grooves at the front ends of the two limiting rods in the limiting rod group 4, and a hollow shell 7 installed at the bottom of the support base plate 3 and near the front end of the support base plate 3. The hollow shell 7 has multiple lifting plates 8 that penetrate the support base plate 3 in its inner cavity. The multiple lifting plates 8 are located directly below the corresponding two limiting rods. The lifting plates 8 are designed as isosceles trapezoidal structures. A vertical rod 9 is fixed at the bottom of the lifting plate 8. The vertical rod 9 slides through the limiting plate 19 fixed in the inner cavity of the hollow shell 7. The lower end of the vertical rod 9 is connected to the extrusion plate 23 through a connector. The extrusion plate 23 is in contact with the extrusion airbag 10. The extrusion airbag 10 is fixedly installed in the hollow cylinder provided in the inner cavity of the hollow shell 7. The extrusion plate 23 is slidably arranged in the hollow cylinder. The extrusion airbag 10 is connected to the externally provided air collection pipe 11 through a connecting pipe. The air collection pipe 11 is connected to the corresponding damping airbag 13 through a connecting hose 12.

[0039] When the silicon carbide wafer moves onto the lifting plate 8 protruding from the upper surface of the supporting base plate 3, the weight of the silicon carbide wafer acts on the lifting plate 8. Under the weight of the silicon carbide wafer, the lifting plate 8 moves downward. At this time, the vertical rod 9, through the connecting piece, causes the extrusion plate 23 to compress the extrusion airbag 10. The extrusion airbag 10 extrudes the internal gas into the two opposing buffer airbags 13. The two buffer airbags 13 expand relative to each other, contacting and compressing the two ends of the silicon carbide wafer, thus hindering the movement of the silicon carbide wafer. During the process of the bottom of the silicon carbide wafer contacting the top of the lifting plate 8, the two damping airbags 13 continuously exert a squeezing and damping effect on the silicon carbide wafer. After the bottom of the silicon carbide wafer no longer contacts the top of the lifting plate 8, the damping airbags 13 return to their original positions, and the obstruction to the silicon carbide wafer is released. The silicon carbide wafer is in a low-speed state and can automatically and slowly move to the wafer placement slot of the annealing furnace tube. After the silicon carbide wafer is placed, the supporting base plate 3 returns to its original position, and then the feeding rack is removed. Finally, the annealing furnace tube is closed.

[0040] It is important to note that: First, the lifting plate 8 is designed as an isosceles trapezoidal structure. The inclined surface of the lifting plate 8 serves as a guide, facilitating the movement of the silicon carbide wafer onto or off the lifting plate 8. This prevents the silicon carbide wafer from colliding violently with the side of the lifting plate 8 or the supporting base plate 3, which could damage the silicon carbide wafer. Furthermore, since the upper end of the lifting plate 8 is protruding, the bottom end of the silicon carbide wafer needs to lose some kinetic energy when it moves to the upper end of the lifting plate 8, which helps to quickly reduce the movement speed of the silicon carbide wafer. Second, throughout the entire process, the upper end of the lifting plate 8 is always located above the upper surface of the supporting base plate 3.

[0041] As a preferred embodiment of this example, Figure 3 , Figure 4 As shown, the front ends of multiple limit rod groups 4 extend beyond the support base plate 3 by a certain distance, and also include a delay and damping unit. The delay and damping unit includes a U-shaped tube 16 on which a ball valve 17 is installed and an arc-shaped rack 15 installed on the upper end of the movable frame 1 and adapted to the movement path of the ball valve 17. A one-way gear 14 that meshes with the arc-shaped rack 15 is installed on the rotating shaft of the ball valve 17.

[0042] The gas collecting pipe 11 is configured as an I-shaped structure, and a one-way valve 18 is sleeved on the connecting pipe in the middle of the gas collecting pipe 11. Both ends of the U-shaped pipe 16 are connected to the connecting pipe.

[0043] like Figure 7 As shown, the front ends of multiple limiting rod assemblies 4 extend beyond the supporting base plate 3 by a certain distance, allowing the front ends of the limiting rods to extend into the wafer placement slot. When the weight of the silicon carbide wafer acts on the lifting plate 8, the gas in the compression airbag 13 is inflated into the buffer airbag 13 through the one-way valve 18 (at this time, the ball valve 17 is closed). When the silicon carbide wafer detaches from the lifting plate 8, the expansion state of its buffer airbag 13 remains unchanged, continuously compressing and buffering the silicon carbide wafer (this buffering and compressing force is less than the weight of the silicon carbide wafer itself). The extended buffering path can effectively slow down the silicon carbide wafer. In the later stages, the silicon carbide wafer moves downward into the wafer placement slot only under its own weight and overcoming the compressing force of the buffer airbag 13, allowing the silicon carbide wafer to move more smoothly into the wafer placement slot, ensuring... The silicon carbide wafer moving into the wafer placement slot does not collide with the wafer (avoiding collision damage to the silicon carbide wafer). After the operation is completed, the support base plate 3 rotates downward and returns to its original position. During this process, the one-way gear 14 on the ball valve 17 meshes with the arc rack 15 and drives the rotating shaft of the ball valve 17 to rotate through the one-way gear 14, so that the ball valve 17 completes the opening and closing operation. When the ball valve 17 is in the open state, it prevents the gas in the air bag 13 from flowing back into the extrusion air bag 10. The extrusion air bag 10 returns to its original state, preventing the air pressure inside the air bag 13 and the extrusion air bag 10 from being the same. When the support base plate 3 is lifted, although the arc rack 15 meshes with the one-way gear 14, it cannot drive the rotating shaft of the ball valve 17 to rotate through the one-way gear 14, that is, the ball valve is always in the closed state.

[0044] As a preferred embodiment of this example, Figure 5 As shown, the connector includes a movable arm 20 rotatably disposed in the inner cavity of the hollow housing 7 via a pin 21. The pin 21 is offset to the right of the center of the movable arm 20. The raised end of the movable arm 20 slides in contact with the lower end of the vertical rod 9. The right end of the movable arm 20 is movably connected to the extrusion plate 23 via a movable rod 22.

[0045] When the vertical rod 9 moves downward, its lower end is squeezed out and squeezed by the upper left end of the movable arm 20. The upper right end of the movable arm 20 is raised, and the extrusion plate 23 is driven to move upward through the movable rod 22 to squeeze the extrusion airbag 10. Since the pin 21 is set to the right side of the center of the movable arm 20, the movable arm 20 forms a force-saving lever. When a small amount of gravity acts on the lifting plate 8, the damping airbag 13 can also generate a large extrusion force on the silicon carbide wafer, so that the damping airbag 13 has a good motion damping effect on the silicon carbide wafer.

[0046] As a preferred embodiment of this example, Figure 5 As shown, the top end of the vertical rod 9 is fixedly connected to the lifting plate 8 via an elastic element 31.

[0047] The elastic element 31 provides the lifting plate 8 with a certain degree of freedom, allowing it to tilt slightly toward the end of the silicon carbide wafer when it is subjected to force, which is beneficial for the silicon carbide wafer to move onto the lifting plate 8.

[0048] refer to Figure 6 An annealing furnace tube includes a furnace tube body mounted on a base frame. The circular heating cavity of the furnace tube body has multiple wafer limiting grooves arranged in a straight line at equal intervals. The furnace tube body includes a first part 26 with a half-circular heating cavity, a second part 27 with a two-fifths semi-circular heating cavity, a third part 33 with a three-fifths semi-circular heating cavity, and two side plates 24 that seal both ends of the circular heating cavity. The third part 33 and the two side plates 24 are fixedly mounted on the base frame. The first part 26 is rotatably mounted on the upper end of the second part 27 via a rotating shaft. A cylinder 25 is fixed on the outer wall of the first part 26, and the output end of the cylinder 25 is fixedly connected to the outer wall of the second part 27. The height of the wafer limiting groove at the bottom of the third part 33 is the same as the height of the front end of the supporting base plate 3.

[0049] A drive motor 29 is mounted on the base frame. A bevel gear 28 is provided on the output shaft of the drive motor 29 and one end of the rotating shaft, and the two bevel gears 28 are meshed together.

[0050] Both the drive motor 29 and the cylinder 25 are electrically connected to the PLC controller.

[0051] Before loading, the originally closed circular heating chamber can be controlled by a cylinder to move the second part 27 downwards a certain distance (this is to prevent the second part 27 from squeezing and damaging the silicon carbide wafer placed in the circular heating chamber when it rotates to close; this distance avoids squeezing and damaging the silicon carbide wafer when the second part 27 rotates). The drive motor 29 is then controlled to rotate the first part 26, forming a shape as shown in the image. Figure 6 or Figure 7In the state shown, the loading rack is connected to the annealing furnace tube. After the silicon carbide wafer is placed into the heating chamber, the loading rack is removed, and the first part 26 is rotated by the drive motor 29 so that the first part 26 covers the upper end of the second part 33. Then, the cylinder 25 is controlled to drive the second part 27 to move upward, so that the three parts form a complete circular heating chamber. After the wafer annealing is completed, the cylinder 25 is first controlled to drive the second part 27 to move downward a certain distance, and then the first part 6 is controlled to rotate to a horizontal position, and the silicon carbide wafer can be taken out.

[0052] The third part is configured with a three-fifths semicircular heating cavity (the upper left end of the third part 33 is horizontal and is the halfway point of the circular heating cavity; the right end is lower than the left end, as shown). Figure 7 As shown), the height of its right end at this upturned position is beneficial for stabilizing and limiting the silicon carbide wafer entering the wafer placement slot, while also reducing the vertical movement height of the silicon carbide wafer (the greater the height, the greater the movement speed of the silicon carbide wafer under the action of gravity, and the easier it is for the silicon carbide wafer to cause violent expansion with the inner wall of the heating chamber).

[0053] As a preferred embodiment of this example, Figure 7 As shown, the base frame has two sets of guide blocks 30 that are inclined outwards and two blocking blocks 32 that are L-shaped. The two guide blocks 30 are arranged in a figure-eight shape. The shortest straight distance between the two guide blocks 30 is the same as the length of the top plate. The height of the two blocking blocks 32 is the same as the height of the top plate.

[0054] The contact guidance of the guide block 30 to the top plate and the limiting block 32 to the top plate facilitate the precise docking of the feeding rack and the annealing furnace tube.

[0055] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A loading rack for batch annealing of silicon carbide wafers, characterized in that: It includes a support frame (2) mounted on the top plate of the movable frame (1) and a damping unit mounted on the support frame (2); The support frame (2) is provided with multiple limit rod groups (4) arranged in a straight line at equal intervals. Each limit rod group (4) includes two limit rods that are opposite to each other and spaced apart. A support base plate (3) is inclinedly arranged below the multiple limit rod groups (4). The front end of the support base plate (3) is rotatably connected to the upper end of the movable frame (1). The rear end of the support base plate (3) passes through the support frame (2) and is provided with an movable opening. An upper blocking column (6) and a lower blocking column (5) are arranged vertically on the inner wall of the movable opening of the support frame (2). The number of the limiting rod group (4) is consistent with the number of wafer limiting grooves provided in the inner cavity of the annealing furnace tube, and the gap between the two limiting rods corresponds to the wafer limiting groove; The damping unit is located near the front end of the support base plate (3). The damping unit can apply different damping forces according to the mass of a single silicon carbide wafer to hinder the movement of the accelerated silicon carbide wafer. The damping unit includes damping airbags (13) installed in the front grooves of the two limiting rods in the limiting rod assembly (4) and a hollow shell (7) installed at the bottom of the support base plate (3) and near the front end of the support base plate (3). The hollow shell (7) has multiple lifting plates (8) penetrating the support base plate (3) in its inner cavity. The multiple lifting plates (8) are located directly below the corresponding two limiting rods. The lifting plates (8) are configured as isosceles trapezoidal structures. A vertical rod (9) is fixed to the bottom of the lifting plate (8). The vertical rod (9) slides through the support base plate (3). A limiting plate (19) is fixedly installed through the inner cavity of the hollow shell (7). The lower end of the vertical rod (9) is connected to the extrusion plate (23) through a connector. The extrusion plate (23) is in contact with the extrusion airbag (10). The extrusion airbag (10) is fixedly installed in the hollow cylinder provided in the inner cavity of the hollow shell (7). The extrusion plate (23) is slidably installed in the hollow cylinder. The extrusion airbag (10) is connected to the externally provided air collection pipe (11) through a connecting pipe. The air collection pipe (11) is connected to the corresponding buffer airbag (13) through a connecting hose (12).

2. The loading rack for batch annealing of silicon carbide wafers according to claim 1, characterized in that: The front ends of the multiple limiting rod groups (4) extend beyond the support base plate (3) by a certain distance, and also include a delay and damping unit. The delay and damping unit includes a U-shaped tube (16) on which a ball valve (17) is installed and an arc-shaped rack (15) installed on the upper end of the moving frame (1) and adapted to the movement path of the ball valve (17). A one-way gear (14) that meshes with the arc-shaped rack (15) is installed on the rotating shaft of the ball valve (17). The gas collecting pipe (11) is configured as an I-shaped structure, and a one-way valve (18) is sleeved on the connecting pipe in the middle of the gas collecting pipe (11). Both ends of the U-shaped pipe (16) are connected to the connecting pipe.

3. The loading rack for batch annealing of silicon carbide wafers according to claim 1, characterized in that: The connector includes a movable arm (20) rotatably disposed in the inner cavity of the hollow shell (7) via a pin (21). The pin (21) is offset to the right of the center of the movable arm (20). The raised end of the movable arm (20) slides in contact with the lower end of the vertical rod (9). The right end of the movable arm (20) is movably connected to the extrusion plate (23) via a movable rod (22).

4. The loading rack for batch annealing of silicon carbide wafers according to claim 1, characterized in that: The top end of the vertical rod (9) is fixedly connected to the lifting plate (8) by an elastic element (31).

5. An annealing furnace tube, used in conjunction with a feeding rack for batch annealing of silicon carbide wafers as described in any one of claims 1-4, comprising a furnace tube body mounted on a base frame, wherein a plurality of wafer positioning grooves are equally spaced in a straight line within a circular heating cavity of the furnace tube body, characterized in that: The furnace tube body includes a first part (26) with a half-circular heating cavity, a second part (27) with a two-fifths semi-circular heating cavity, a third part (33) with a three-fifths semi-circular heating cavity, and two side plates (24) that seal both ends of the circular heating cavity. The third part (33) and the two side plates (24) are fixedly installed on the base frame. The first part (26) is rotatably mounted on the upper end of the second part (27) via a rotating shaft. A cylinder (25) is fixed on the outer wall of the first part (26), and the output end of the cylinder (25) is fixedly connected to the outer wall of the second part (27). The height of the wafer limiting groove at the bottom of the third part (33) is the same as the height of the front end of the supporting base plate (3). A drive motor (29) is mounted on the base frame. A bevel gear (28) is provided on the output shaft of the drive motor (29) and on one end of the rotating shaft. The two bevel gears (28) are meshed together. The drive motor (29) and the cylinder (25) are both electrically connected to the PLC controller.

6. An annealing furnace tube according to claim 5, characterized in that: The base frame is provided with two sets of guide blocks (30) that are inclined outwards and two blocking blocks (32) that are L-shaped. The two guide blocks (30) are arranged in a figure-eight shape. The shortest straight distance between the two guide blocks (30) is the same as the length of the top plate. The height of the two blocking blocks (32) is the same as the height of the top plate.

Images