A preparation method of a TOPCon battery tunneling oxide layer and a TOPCon battery

Abstract

The invention provides a preparation method of a TOPCon battery tunneling oxide layer and a TOPCon battery, and relates to the technical field of solar cells. The preparation method comprises the following steps: placing a battery cell into a PECVD furnace tube, ionizing and depositing an initial tunneling oxide layer under high temperature and vacuum conditions, and then sequentially introducing Ar, H2 and N2O to ionize the initial tunneling oxide layer to obtain a single-layer tunneling oxide layer, and optionally, sequentially repeating the steps of depositing the initial tunneling oxide layer and ionizing the initial oxide layer to deposit a stacked tunneling oxide layer, thereby solving the problem of poor oxide layer compactness when the TOPCon battery in the prior art prepares the tunneling oxide layer by the PECVD method. The preparation method of the TOPCon battery tunneling oxide layer provided by the invention improves the compactness of the tunneling oxide layer and enhances the passivation effect.

Description

Technical Field

[0001] The invention relates to the technical field of solar cells, and in particular to a preparation method of a TOPCon cell tunneling oxide layer and a TOPCon cell. Background Art

[0002] TOPCon cell, the full name of which is tunneling oxide passivated contact cell, is a new type of efficient and environmentally friendly solar cell that is widely used in photovoltaic power generation systems.

[0003] The existing TOPCon battery uses the PECVD method to prepare the tunneling oxide layer by introducing N2O and SiH4 to ionize SiO2. The single-layer deposition of SiO2 in this reaction has poor density, which affects the passivation effect and reduces the conversion efficiency of the battery cell.

[0004] In view of this, the present invention is proposed. Summary of the invention

[0005] One of the purposes of the present invention is to provide a method for preparing a tunneling oxide layer of a TOPCon battery. The preparation method deposits an initial tunneling oxide layer on a battery cell entering a PECVD furnace tube, then sequentially ionizes the battery cell using Ar gas, H2 gas, and N2O gas, and then repeats the steps of depositing an initial oxide layer and using gas ionization to form a stacked deposited tunneling oxide layer. The preparation method of the tunneling oxide layer of a TOPCon battery provided by the present invention improves the compactness of the tunneling oxide layer, enhances the passivation effect, and solves the problem of poor compactness of the oxide layer when the tunneling oxide layer of a TOPCon battery is prepared by the PECVD method in the prior art.

[0006] The second object of the present invention is to provide a TOPCon battery, wherein the TOPCon battery is prepared by the above preparation method and has a higher conversion efficiency.

[0007] In order to achieve the above-mentioned purpose of the present invention, the following technical solutions are particularly adopted:

[0008] In a first aspect, the present invention provides a method for preparing a tunneling oxide layer of a TOPCon battery, comprising the following steps:

[0009] The battery cell is placed in a PECVD furnace tube, and an initial tunneling oxide layer is ionized and deposited under high temperature and vacuum conditions, and then Ar, H2 and N2O are introduced in sequence to ionize the initial tunneling oxide layer to obtain a single-layer tunneling oxide layer. Optionally, the steps of depositing the initial tunneling oxide layer and ionizing the initial tunneling oxide layer are repeated in sequence to deposit a stacked tunneling oxide layer.

[0010] The thickness of the tunnel oxide layer is relatively thin, generally 0.8 to 1.2 nm. Figure 6As shown, since the conventional tunnel oxide layer is thin, if a lamination process is performed, it is easy to increase the roughness of the junction and affect the compactness. The preparation method of the TOPCon battery tunnel oxide layer provided by the present invention is as follows: Figure 5 As shown, the tunneling oxide layer is a stacked oxide layer, and the loose holes of the previous layer are repaired by the latter layer, so that the tunneling oxide layer deposition is more compact; and the preparation method provided by the present invention first uses Ar gas to bombard the oxide layer of each layer to increase its compactness and density, and then uses H2 gas ionization to etch and repair the uneven parts of the oxide layer produced after the bombardment to make it flat, and then uses N2O gas to ionize the bombarded oxide layer to repair it, and N2O ionizes oxygen atoms to form silicon dioxide with the battery layer, so that the stacked deposition is more uniform, and the overall tunneling oxide layer is denser and the thickness is more stable.

[0011] Preferably, the temperature range under high temperature conditions is 400°C-500°C, for example, it can be 400°C, 410°C, 420°C, 430°C, 440°C, 450°C, 460°C, 470°C, 480°C, 490°C, 500°C, etc.

[0012] In the present invention, the deposition temperature is set to 400-500°C. During the deposition process, the temperature is relatively high, which can make the oxide layer denser. When the temperature is lower than 400°C, the reaction is incomplete, and when the temperature is higher than 500°C, the reaction is too fast, and the tunnel oxide layer is deposited unevenly, affecting the passivation effect.

[0013] Preferably, SiH4 and N2O gases are introduced to perform ionization deposition of an initial tunneling oxide layer.

[0014] Preferably, the flow rate of SiH4 gas is: 500-3000sccm, for example, it can be 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000sccm, 1100sccm, 1200sccm, 1300sccm, 1400sccm, 1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm, 2000sccm, 2100sccm, 2200sccm, 2300sccm, 2400sccm, 2500sccm, 2600sccm, 2700sccm, 2800sccm, 2900sccm, 3000sccm, etc.

[0015] Preferably, the flow rate of N2O gas is: 4000-10000sccm, for example, it can be 4000sccm, 4500sccm, 5000sccm, 5500sccm, 6000sccm, 6500sccm, 7000sccm, 7500sccm, 8000sccm, 8500sccm, 9000sccm, 9500sccm, 10000sccm, etc.

[0016] Preferably, in the step 3, the reaction time of the initial tunneling oxide layer ionized deposited under high temperature and vacuum conditions is 10-40s, for example, it can be 10s, 11s, 12s, 13s, 14s, 15s, 16s, 17s, 18s, 19s, 20s, 21s, 22s, 23s, 24s, 25s, 26s, 27s, 28s, 29s, 30s, 31s, 32s, 33s, 34s, 35s, 36s, 37s, 38s, 39s, 40s, etc.

[0017] Preferably, the deposition thickness of the initial tunnel oxide layer deposited by ionization deposition under high temperature and vacuum conditions is 0.2-0.3 nm, for example, 0.2 nm, 0.3 nm, etc.

[0018] Preferably, the flow rate of Ar gas is 5000-10000 sccm, for example, it can be 5000 sccm, 5500 sccm, 6000 sccm, 6500 sccm, 7000 sccm, 7500 sccm, 8000 sccm, 8500 sccm, 9000 sccm, 9500 sccm, 10000 sccm, etc.;

[0019] Preferably, the reaction time is 10-30s, for example, it can be 10s, 11s, 12s, 13s, 14s, 15s, 16s, 17s, 18s, 19s, 20s, 21s, 22s, 23s, 24s, 25s, 26s, 27s, 28s, 29s, 30s, etc.

[0020] Furthermore, in the present invention, the flow rate of Ar gas is more preferably 8000 sccm.

[0021] Preferably, the flow rate of H2 gas is 8000-12000sccm, for example, it can be 8000sccm, 8500sccm, 9000sccm, 9500sccm, 10000sccm, 10500sccm, 11000sccm, 11500sccm, 12000sccm, etc.;

[0022] Furthermore, in the present invention, the flow rate of H2 gas is more preferably 10000 sccm.

[0023] Preferably, the reaction time is 10-20 s, for example, it can be 10 s, 11 s, 12 s, 13 s, 14 s, 15 s, 16 s, 17 s, 18 s, 19 s, 20 s, etc.

[0024] Furthermore, in the present invention, the reaction time is more preferably 15 s.

[0025] Preferably, the flow rate of N2O gas is 6000-9000sccm, for example, it can be 6000sccm, 6500sccm, 7000sccm, 7500sccm, 8000sccm, 8500sccm, 9000sccm, etc.;

[0026] Furthermore, in the present invention, the flow rate of N2O gas is more preferably 8000 sccm.

[0027] Preferably, the reaction time is 5-20 s, for example, it can be 5 s, 6 s, 7 s, 8 s, 9 s, 10 s, 11 s, 12 s, 13 s, 14 s, 15 s, 16 s, 17 s, 18 s, 19 s, 20 s, etc.

[0028] Furthermore, in the present invention, the reaction time is more preferably 10 s.

[0029] Preferably, the preparation method further comprises the following steps: performing a leak detection treatment on the PECVD furnace tube before depositing the initial tunneling oxide layer.

[0030] As a preferred technical solution of the present invention, the preparation method of the TOPCon battery comprises the following steps:

[0031] Step 1: The cell enters the PECVD furnace tube, and the temperature in the furnace tube rises to the process set temperature, where the temperature range is 400℃-500℃;

[0032] Step 2: After the treatment in step 1, the PECVD furnace tube is purged with nitrogen, and vacuumed and leaked;

[0033] Step 3: After the treatment in step 2, SiH4 and N2O gases are introduced to ionize and deposit an initial tunneling oxide layer on the cell, wherein the gas flow rate of SiH4 is 500-3000sccm, the gas flow rate of N2O is 4000-10000sccm, the reaction time is 10-40s, and the deposition thickness is 0.2-0.3nm;

[0034] Step 4: After the treatment in step 3, Ar gas is introduced to ionize the oxide layer, the Ar gas flow rate is 5000-10000 sccm, and the reaction time is 10-30s;

[0035] Step 5: After the treatment in step 4, H2 gas is introduced to ionize the oxide layer, the H2 gas flow rate is 8000-12000sccm, and the reaction time is 10-20s;

[0036] Step 6: After the treatment in step 5, N2O gas is introduced to ionize the oxide layer, the N2O gas flow rate is 6000-9000sccm, the reaction time is 5-20s, and a single-layer tunneling oxide layer is obtained;

[0037] Step 7: Repeat step 3 to step 6 for another 3 times to deposit a stacked tunneling oxide layer with a thickness of 0.8-1.2 nm.

[0038] In a second aspect, the present invention provides a TOPCon battery, wherein the TOPCon battery is prepared by the preparation method.

[0039] Compared with the prior art, the present invention has the following beneficial effects:

[0040] (1) The present invention provides a method for preparing a tunneling oxide layer of a TOPCon battery. The tunneling oxide layer is deposited in layers, and the loose holes in the previous layer are repaired by the next layer, so that the tunneling oxide layer deposition is more dense.

[0041] (2) In the present invention, Ar is first used to bombard the oxide layer of each layer, and then H2 is ionized to etch and repair the uneven parts of the oxide layer produced after the bombardment, and then the bombarded oxide layer is repaired for the second time by ionizing N2O, and the intersection of the stacked layers is processed to reduce the roughness of the intersection, so that the stacked deposition distribution is more uniform, and the overall tunneling oxide layer is denser and the thickness is more stable. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0043] Figure 1 is a schematic structural diagram of an initial tunneling oxide layer in an embodiment of the present invention;

[0044] Figure 2 is a schematic diagram of the structure of the initial tunnel oxide layer after argon treatment;

[0045] Figure 3 Schematic diagram of the structure of the initial tunnel oxide layer after being treated with argon and hydrogen;

[0046] Figure 4 Schematic diagram of the structure of the initial tunneling oxide layer after the tunneling oxide layer is treated with argon, hydrogen and laughing gas, i.e., the single-layer tunneling oxide layer in the present invention;

[0047] Figure 5 The stacked tunneling oxide layer is prepared by the method for preparing the tunneling oxide layer of a TOPCon battery provided by an embodiment of the present invention;

[0048] Figure 6 Schematic diagram of the structure of a conventional tunnel oxide layer.

[0049] Icons: 10 - first protective layer; 20 - second protective layer; 30 - third protective layer; 100 - initial tunneling oxide layer; 110 - tunneling oxide layer after argon treatment; 120 - tunneling oxide layer after argon and hydrogen treatment; 130 - single-layer tunneling oxide layer; 200 - stacked tunneling oxide layer; 300 - conventional tunneling oxide layer. DETAILED DESCRIPTION

[0050] Unless otherwise defined herein, scientific and technical terms used in conjunction with the present invention shall have the meanings commonly understood by those of ordinary skill in the art. The meaning and scope of the terms should be clear, however, in the case of any potential ambiguity, the definitions provided herein take precedence over any dictionary or external definitions. In this application, unless otherwise stated, the use of "or" means "and / or". In addition, the use of the term "including" and other forms is non-limiting.

[0051] The technical solution of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0052] The present invention is further described below by way of examples. Unless otherwise specified, the materials in the examples are prepared according to existing methods or directly purchased from the market.

[0053] The present invention provides a method for preparing a tunneling oxide layer of a TOPCon battery. Figure 1 The initial tunneling oxide layer 100 prepared in the present invention; Figure 2 is a schematic diagram of the structure of the tunnel oxide layer 110 after being treated with argon gas, wherein the first protective layer 10 is a protective layer formed by ionizing the initial tunnel oxide layer with argon gas; Figure 3 is a schematic diagram of the structure of the tunnel oxide layer 120 after being treated with argon and hydrogen, wherein the second protective layer 20 is a protective layer formed by ionizing the initial tunnel oxide layer with hydrogen; Figure 4Schematic diagram of the structure of a single-layer tunneling oxide layer 130, wherein the single-layer tunneling oxide layer 130 is a tunneling oxide layer treated with argon, hydrogen and laughing gas, wherein the third protective layer 30 is a protective layer formed by ionizing the initial tunneling oxide layer with laughing gas, and when the thickness of the single-layer tunneling oxide layer 130 is thick enough, the single-layer tunneling oxide layer 130 can also be used as an integral tunneling oxide layer; Figure 5 The tunneling oxide layer in the embodiment is a stacked tunneling oxide layer 200; Figure 6 The oxide layer in is a conventional tunnel oxide layer 300 .

[0054] Example 1

[0055] This embodiment provides a method for preparing a tunneling oxide layer of a TOPCon battery, comprising the following steps:

[0056] Step 1: The cell enters the PECVD furnace tube, and the temperature in the furnace tube rises to the process set temperature, where the temperature range is 400℃~500℃;

[0057] Step 2: After the treatment in step 1, the PECVD furnace tube is purged with nitrogen, and vacuumed and leaked;

[0058] Step 3: After the treatment in step 2, SiH4 and N2O gases are introduced to ionize and deposit the initial tunneling oxide layer, the SiH4 gas flow rate is 1200sccm, the N2O gas flow rate is 9500sccm, the reaction time is 20s, and the deposition thickness is 0.2nm;

[0059] Step 4: After the treatment in step 3, Ar gas is introduced for ionization, the Ar gas flow rate is 8000 sccm, and the reaction time is 20 s;

[0060] Step 5: After the treatment in step 4, H2 is introduced for ionization, the H2 gas flow rate is 10000sccm, and the reaction time is 15s;

[0061] Step 6: After the treatment in step 5, N2O is introduced for ionization, the N2O gas flow rate is 8000 sccm, the reaction time is 10 s, and a single-layer tunneling oxide layer is obtained;

[0062] Step 7: Repeat the above steps 3, 4, 5 and 6 for another 3 times to deposit a stacked tunnel oxide layer with a thickness of 0.8 nm.

[0063] Example 2

[0064] This embodiment provides a method for preparing a tunneling oxide layer of a TOPCon battery. The reaction time for depositing the tunneling oxide layer in step 3 is 30 seconds, the deposition thickness is 0.3 nm, and the remaining steps are consistent with those in embodiment 1.

[0065] Example 3

[0066] This embodiment provides a method for preparing a tunneling oxide layer of a TOPCon battery. The gas flow reaction parameters in step 4 are changed, and the remaining steps are consistent with those in embodiment 1.

[0067] In step 4, Ar gas is introduced for ionization, and the Ar gas flow rate is 2000 sccm.

[0068] Example 4

[0069] This embodiment provides a method for preparing a tunneling oxide layer of a TOPCon battery. The gas flow parameters in step 4 are changed, and the remaining steps are consistent with those in embodiment 1.

[0070] In step 4, Ar gas is introduced for ionization, and the Ar gas flow rate is 15000 sccm.

[0071] Example 5

[0072] This embodiment provides a method for preparing a tunneling oxide layer of a TOPCon battery. The gas flow parameters in step 5 are changed, and the remaining steps are consistent with those in embodiment 1.

[0073] In step 5, H2 is introduced for ionization, and the H2 gas flow rate is 4000sccm.

[0074] Example 6

[0075] This embodiment provides a method for preparing a tunneling oxide layer of a TOPCon battery. The gas flow parameters in step 5 are changed, and the remaining steps are consistent with those in embodiment 1.

[0076] In step 5, H2 is introduced for ionization, and the H2 gas flow rate is 16000 sccm.

[0077] Example 7

[0078] This embodiment provides a method for preparing a tunneling oxide layer of a TOPCon battery. The gas flow parameters in step 6 are changed, and the remaining steps are consistent with those in embodiment 1.

[0079] Step 6: After the treatment in step 5, N2O is introduced for ionization, and the N2O gas flow rate is 3000 sccm.

[0080] Example 8

[0081] This embodiment provides a method for preparing a tunneling oxide layer of a TOPCon battery. The gas flow parameters in step 6 are changed, and the remaining steps are consistent with those in embodiment 1.

[0082] Step 6: After the treatment in step 5, N2O is introduced for ionization, and the N2O gas flow rate is 11000 sccm.

[0083] Example 9

[0084] This embodiment provides a method for preparing a tunneling oxide layer of a TOPCon battery. In step 3, the reaction time is 80 seconds, the deposition thickness is 0.8 nm, and step 7 is not performed. The remaining steps are consistent with those in embodiment 1.

[0085] Comparative Example 1

[0086] This comparative example provides a method for preparing a TOPCon battery tunneling oxide layer, comprising the following steps:

[0087] Step 1: The process starts running, the battery cell enters the PECVD furnace tube, the furnace tube cavity begins to be purged and heated to the process set temperature, where the temperature range is 400℃~500℃;

[0088] Step 2: After the treatment in step 1, the PECVD furnace tube is purged with nitrogen and vacuumed and leaked;

[0089] Step 3: After the treatment in step 2, SiH4 and N2O gases are introduced to ionize and deposit the tunnel oxide layer. The flow rate is SiH4: 1200 sccm, N2O: 9500 sccm, the reaction time is 80 s, and the deposition thickness is 0.8 nm.

[0090] Comparative Example 2

[0091] This comparative example provides a method for preparing a tunneling oxide layer of a TOPCon battery, which is different from Example 1 only in that steps 4-6 are not performed, and the other steps are consistent with Example 1.

[0092] Comparative Example 3

[0093] This comparative example provides a method for preparing a tunneling oxide layer of a TOPCon battery, which is different from Example 1 only in that steps 5-6 are not performed, and the other steps are consistent with Example 1.

[0094] Comparative Example 4

[0095] This comparative example provides a method for preparing a tunneling oxide layer of a TOPCon battery, which is different from Example 1 only in that step 6 is not performed, and the other steps are consistent with Example 1.

[0096] Comparative Example 5

[0097] This comparative example provides a method for preparing a tunneling oxide layer of a TOPCon battery, which is different from Example 1 only in that step 5 is not performed, and the other steps are consistent with Example 1.

[0098] Comparative Example 6

[0099] This comparative example provides a method for preparing a tunneling oxide layer of a TOPCon battery. The only difference from Example 1 is that the order of step 5 and step 6 is swapped, that is, N2O repair is performed first, and then H2 ionization is performed. The other steps are consistent with Example 1.

[0100] Test Case

[0101] Test samples: TOPCon batteries prepared in Examples 1-8 and TOPCon batteries prepared in Comparative Examples 1-6;

[0102] Test method:

[0103] (1) Density: characterized by using the halm test cell open circuit voltage;

[0104] (2) Conversion efficiency: using the halm tester;

[0105] The specific test results are shown in Table 1:

[0106]

[0107]

[0108] It can be seen from Table 1 that compared with Examples 3-8, when the gas flow values ​​of Ar gas, H2, and N2O in Example 1 are selected, the tunneling oxide layer density is higher and the battery conversion efficiency is higher; Example 9 is an initial tunneling oxide layer with a deposition thickness of 0.8nm, and the initial tunneling oxide layer is repaired in sequence by three gases to obtain a single-layer tunneling oxide layer, and the single-layer tunneling oxide layer is used as the tunneling oxide layer as a whole. The tunneling oxide layer density and battery conversion efficiency in Example 9 are better than the conventional single-layer tunneling oxide layer prepared in Comparative Example 1; the preparation method of Comparative Example 2 does not perform bombardment, repair and other steps, and directly performs the stacking step, the preparation method of Comparative Example 3 only performs argon bombardment, the preparation method of Comparative Example 4 only performs argon bombardment and hydrogen repair, the preparation method of Comparative Example 5 only performs argon bombardment and nitrous oxide repair, and the order of repairing gases in the preparation method of Comparative Example 6 is changed. It can be seen from the data of Example 1 and Comparative Examples 1-6 in the table that the tunneling oxide layer prepared by the preparation method of Example 1 has a higher density and a higher battery conversion efficiency. Therefore, compared to Figure 6 The conventional tunneling oxide layer in the present invention is a tunneling oxide layer prepared by the method for preparing the tunneling oxide layer of a TOPCon battery, such as Figure 5As shown, the tunneling oxide layer is a stacked oxide layer, and the loose holes in the previous layer are repaired by the latter layer, so that the tunneling oxide layer deposition is more dense. The TOPCon solar cell prepared by the preparation method of the TOPCon cell tunneling oxide layer provided by the present invention has a higher conversion efficiency.

[0109] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for preparing a TOPCon battery tunneling oxide layer, characterized in that: The following steps are involved: The battery cell is placed in a PECVD furnace tube, and an initial tunneling oxide layer is obtained by ionization deposition under high temperature and vacuum conditions. Ar, H2 and N2O are then introduced in sequence to ionize the initial tunneling oxide layer to obtain a single-layer tunneling oxide layer. The steps of depositing the initial tunneling oxide layer and ionizing the initial tunneling oxide layer are repeated in sequence to deposit a stacked tunneling oxide layer.

2. The method for preparing a TOPCon battery tunneling oxide layer according to claim 1, characterized in that: The temperature range under high temperature conditions is 400℃-500℃.

3. The method for preparing a TOPCon battery tunneling oxide layer according to claim 1, characterized in that: Passing SiH4 and N2O gases to ionize and deposit an initial tunneling oxide layer; The flow rate of SiH4 gas is: 500-3000 sccm, and the flow rate of N2O gas is: 4000-10000 sccm.

4. The method for preparing a TOPCon battery tunneling oxide layer according to claim 1, characterized in that: The reaction time of the initial tunneling oxide layer is 10-40 s under high temperature and vacuum conditions.

5. The method for preparing a TOPCon battery tunneling oxide layer according to claim 1, characterized in that: The thickness of the initial tunneling oxide layer deposited by ionization under high temperature and vacuum conditions is 0.2-0.3 nm; The number of times of depositing the initial tunneling oxide layer and ionizing the initial tunneling oxide layer is repeated is three to five times.

6. The method for preparing a TOPCon battery tunneling oxide layer according to claim 1, characterized in that: The flow rate of Ar gas is 5000-10000 sccm; The reaction time is 10-30 s.

7. The method for preparing a TOPCon battery tunneling oxide layer according to claim 1, characterized in that: The flow rate of H2 gas is 8000-12000 sccm; The reaction time is 10-20 s.

8. The method for preparing a TOPCon battery tunneling oxide layer according to claim 1, characterized in that: The flow rate of N2O gas is 6000-9000 sccm; The reaction time is 5-20 s.

9. The method for preparing a TOPCon battery tunneling oxide layer according to claim 1, characterized in that: The preparation method further comprises the following steps: performing a leak detection process on the PECVD furnace tube before depositing the initial tunneling oxide layer.

10. A TOPCon battery, characterized in that: The TOPCon battery is prepared by the preparation method described in any one of claims 1-9.

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