Drive protection circuit for power semiconductor device, power semiconductor device and its application

Abstract

A driving protection circuit for a power semiconductor device, a power semiconductor device and applications thereof. The driving protection circuit for the power semiconductor device comprises an opening module, a first closing module and a protection module, wherein the opening module, the first closing module and the protection module are connected in parallel between the gate and cathode of the power semiconductor device, wherein the protection module is used to protect the power semiconductor device when the gate cathode voltage of the power semiconductor device exceeds a preset threshold. The driving protection circuit for a power semiconductor device, the power semiconductor device and applications thereof of the present invention, by adding a protection module, ensures the safe operation of the device chip, the package and the driver itself under fault conditions such as the power semiconductor device not being connected to the driver or the internal cathode contact of the power semiconductor device package being unreliable.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic circuits, and in particular, to a drive protection circuit for a power semiconductor device, a power semiconductor device, and its applications. Background Art

[0002] Power semiconductor devices, also known as power electronic devices or power electronics devices, are one of the most core devices in the electronic industry chain. Power semiconductor devices can achieve electric energy conversion and circuit control, and mainly play roles such as power conversion, power amplification, power switching, circuit protection, inversion (DC to AC), and rectification (AC to DC) in a circuit.

[0003] In the prior art, for devices such as gate commutated thyristors (GCTs), integrated gate commutated thyristors (IGCTs), and emitter turn-off thyristors (ETOs), the gate drive circuit injects current from the drive into the device gate to trigger device turn-on during turn-on, and provides a reverse voltage from the drive to the device gate-cathode to ensure reliable device turn-off during turn-off. In addition, for devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs) in the prior art, the gate drive circuit provides a positive voltage from the drive to the device gate to trigger device turn-on during turn-on, and provides a reverse voltage from the drive to the device gate to ensure reliable device turn-off during turn-off.

[0004] The gate drive circuit of a power semiconductor device generally includes a turn-on module and a turn-off module, such as the solutions disclosed in Chinese Patent Application Nos. CN201820003158.8, CN202111259329.6, etc. Among them, the turn-on module is usually composed of a switch group and a current source connected in series. When the switch group is closed, the current source of the turn-on module injects high-rising-rate and high-amplitude strong trigger current pulses into the gate of the power semiconductor device multiple times to ensure uniform conduction of the power semiconductor device and prevent current concentration from causing turn-on thermal failure of the power semiconductor device. When the switch group is open, the current source of the turn-on module is bypassed to prevent affecting the normal operation of other modules. The turn-off module is usually composed of a switch group and a negative voltage turn-off capacitor group connected in series. When the switch group is closed, the negative voltage turn-off capacitor group provides a reverse voltage bias for the gate-cathode to ensure reliable turn-off of the power semiconductor device, and a high-resistance state exists between the anode and the cathode.

[0005] However, when the power semiconductor device is not connected to the drive or the internal cathode contact of the power semiconductor device package is unreliable, after the switch group inputs the current source of the turn-on module, a high voltage is generated due to the inability to form a closed loop, posing a risk of damaging the device chip, package, or even the drive itself. Summary of the Invention

[0006] In view of this, the main object of the present invention is to provide a drive protection circuit for a power semiconductor device, a power semiconductor device and its application, so as to at least partially solve the above technical problems.

[0007] To achieve the above object, as an aspect of the present invention, there is provided a drive protection circuit for a power semiconductor device, including a turn-on module, a first turn-off module, and a protection module. The turn-on module, the first turn-off module, and the protection module are connected in parallel between the gate and the cathode of the power semiconductor device. Wherein, the protection module is configured to protect the power semiconductor device when the gate-cathode voltage of the power semiconductor device exceeds a preset threshold.

[0008] Optionally, the protection module includes a voltage comparison unit and a switch unit. The voltage comparison unit and the switch unit are connected in parallel between the gate and the cathode of the power semiconductor device. The voltage comparison unit is configured to generate a conduction signal of the switch unit when the gate-cathode voltage of the power semiconductor device exceeds a preset threshold. The switch unit is configured to be turned on according to the conduction signal to form a closed loop between the gate and the cathode of the power semiconductor device.

[0009] Optionally, the voltage comparison unit includes a first switching diode and a first clamping resistor. The switch unit includes a first current-driven semiconductor switch. The anode of the first switching diode and the first end of the first clamping resistor are connected to the gate of the first current-driven semiconductor switch. The cathode of the first switching diode and the anode of the first current-driven semiconductor switch are connected to the gate of the power semiconductor device. The second end of the first clamping resistor and the cathode of the first current-driven semiconductor switch are connected to the cathode of the power semiconductor device. The first current-driven semiconductor switch is a semi-controlled thyristor or a gate turn-off thyristor (GTO), preferably a semi-controlled thyristor.

[0010] Optionally, the voltage comparison unit includes a second switching diode and a second clamping resistor. The switch unit includes a second current-driven semiconductor switch. The anode of the second switching diode is connected to the gate of the second current-driven semiconductor switch. The cathode of the second switching diode, the first end of the second clamping resistor, and the anode of the second current-driven semiconductor switch are connected to the gate of the power semiconductor device. The second end of the second clamping resistor and the cathode of the second current-driven semiconductor switch are connected to the cathode of the power semiconductor device. The second current-driven semiconductor switch is a semi-controlled thyristor or a GTO, preferably a semi-controlled thyristor.

[0011] Optionally, the voltage comparison unit includes a first voltage-dividing resistor and a second voltage-dividing resistor, the switching unit includes a voltage-driven semiconductor switch, the second end of the first voltage-dividing resistor and the first end of the second voltage-dividing resistor are connected to the gate of the voltage-driven semiconductor switch, the first end of the first voltage-dividing resistor and the drain of the voltage-driven semiconductor switch are connected to the gate of the power semiconductor device, and the second end of the second voltage-dividing resistor and the source of the voltage-driven semiconductor switch are connected to the cathode of the power semiconductor device. The voltage-driven semiconductor switch is a metal-oxide-semiconductor field-effect transistor (MOSFET), a high electron mobility transistor (HEMT), an insulated gate bipolar transistor (IGBT), or a junction field-effect transistor (JFET), preferably a MOSFET.

[0012] Optionally, the protection module further includes a gate trigger unit, which is connected between the voltage comparison unit and the switching unit and is used for performing logical operation or power amplification on the conduction signal.

[0013] Optionally, the voltage comparison unit includes a third voltage-dividing resistor and a fourth voltage-dividing resistor, the switching unit includes a relay, and the gate trigger unit includes a power amplifier; the second end of the third voltage-dividing resistor and the first end of the fourth voltage-dividing resistor are connected to the positive input terminal of the power amplifier, the negative input terminal and the output terminal of the power amplifier are connected to the control port of the relay, the first end of the third voltage-dividing resistor and the first end of the main circuit of the relay are connected to the gate of the power semiconductor device, and the second end of the fourth voltage-dividing resistor and the second end of the main circuit of the relay are connected to the cathode of the power semiconductor device; preferably, the power amplifier is composed of an operational amplifier.

[0014] Optionally, the drive protection circuit further includes a maintenance module, which is connected in parallel between the gate and the cathode of the power semiconductor device and is used to ensure the reliable conduction of the power semiconductor device in the case of a failure of the turn-on module.

[0015] Optionally, the drive protection circuit further includes a second turn-off module. The first ends of the turn-on module, the first turn-off module, and the protection module are connected to the gate of the power semiconductor device, the first end of the second turn-off module is connected to the cathode of the power semiconductor device, and the second end of the second turn-off module is connected to the second ends of the turn-on module, the first turn-off module, and the protection module.

[0016] As another aspect of the present invention, a power semiconductor device is provided, which includes the drive protection circuit of the present invention; the power semiconductor device is preferably any one of GTO, GCT, IGCT, semi-controlled thyristor, and ETO.

[0017] As another aspect of the present invention, there is provided an electronic device including the power semiconductor device described in the present invention.

[0018] Compared with the prior art, for the drive protection circuit, power semiconductor device and its application of the present invention, by adding a protection module, the operation safety of the device chip, package and drive itself can be ensured under fault conditions such as when the power semiconductor device is not connected to the drive or the contact of the internal cathode of the power semiconductor device package is unreliable. In addition, the drive protection circuit of the present invention further includes a maintenance module, which injects a gate current or provides a positive voltage to the power semiconductor device when the turn-on module fails, so that the power semiconductor device is in a conducting state. The drive protection circuit of the present invention is simple and reliable, has a low cost, can realize automatic protection of the power semiconductor device, has a low cost, and is easy to be applied and popularized. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a schematic structural diagram of a drive protection circuit of a power semiconductor device according to an embodiment of the present invention;

[0020] Figure 2 is a schematic structural diagram of a drive protection circuit of a power semiconductor device according to a preferred embodiment of the present invention;

[0021] Figure 3 is a schematic structural diagram of a drive protection circuit of a power semiconductor device according to another preferred embodiment of the present invention;

[0022] Figure 4 is a schematic structural diagram of a protection module according to a preferred embodiment of the present invention;

[0023] Figure 5 is a schematic structural diagram of a protection module according to an alternative embodiment of the present invention;

[0024] Figure 6 is a schematic structural diagram of a protection module according to another alternative embodiment of the present invention;

[0025] Figure 7 is a schematic structural diagram of a protection module according to yet another alternative embodiment of the present invention;

[0026] Figure 8 is a schematic structural diagram of a protection module according to another preferred embodiment of the present invention;

[0027] Figure 9 is a schematic structural diagram of a protection module according to an alternative embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0028] To make the objectives, technical solutions and advantages of the present invention more clearly understood, the following further elaborates on the present invention in detail with reference to specific embodiments and the accompanying drawings.

[0029] The present invention provides a driving protection circuit for a power semiconductor device, the power semiconductor device and its application, which can ensure the safe operation of the device chip, package and the driver itself under fault conditions such as when the power semiconductor device is not connected to the driver or the cathode contact inside the power semiconductor device package is unreliable.

[0030] Specifically, in a specific embodiment, the present invention provides a driving protection circuit for a power semiconductor device, as Figure 1 shown, which includes a first turn-off module 2, a turn-on module 3, and a protection module 4. The first turn-off module 2, the turn-on module 3, and the protection module 4 are connected in parallel between the gate G and the cathode K of the power semiconductor device 1. Among them, the protection module 4 is used to protect the power semiconductor device 1 when the gate-cathode voltage of the power semiconductor device 1 exceeds a preset threshold.

[0031] The forward breakdown voltage for turning on the gate-cathode diode of the power semiconductor device is very low. If the gate-cathode voltage exceeds a certain threshold, it can be considered that the power semiconductor device is not connected to the driver or the cathode contact inside the power semiconductor device package is unreliable. When the power semiconductor device is not connected to the driver or there is an unreliable cathode contact inside the power semiconductor device package, after the switch group inputs the current source of the turn-on module, a high voltage will be generated due to the inability to form a closed loop, posing a risk of damaging the device chip, package, and even the driver itself. By adding a protection module in the driving protection circuit, the present invention provides a closed loop between the gate and the cathode of the power semiconductor device when the gate-cathode voltage of the power semiconductor device exceeds the preset threshold, ensuring the safe operation of the device chip, package, and the driver itself.

[0032] It can be understood that the preset threshold of the gate-cathode voltage can be determined according to the actual situation. For example, it can be comprehensively determined by combining factors such as the forward breakdown voltage for turning on the gate-cathode diode and the critical voltage for damaging the device chip, package, and / or the driver itself.

[0033] As a preferred embodiment, the power semiconductor device 1 is any one of GTO, GCT, IGCT, and semi-controlled thyristor. The driving protection circuit of the power semiconductor device 1 further includes a maintenance module 5, as Figure 2 shown. The maintenance module 5 is connected in parallel between the gate G and the cathode K of the power semiconductor device 1, and is used to inject current or provide a positive voltage to the gate G of the power semiconductor device 1 when the turn-on module 3 fails, ensuring the reliable turn-on of the power semiconductor device 1.

[0034] In another preferred embodiment, the power semiconductor device 1 is an ETO, and the drive protection circuit of the power semiconductor device 1 further includes a second turn-off module 2', as Figure 3 shown, the first ends of the first turn-off module 2, the turn-on module 3, the protection module 4, and the maintenance module 5 are connected to the gate G of the power semiconductor device 1, and the first end of the second turn-off module 2' is connected to the cathode K of the power semiconductor device, and the second end of the second turn-off module 2' is connected to the second ends of the first turn-off module 2, the turn-on module 3, the protection module 4, and the maintenance module 5.

[0035] Preferably, the power semiconductor device 1 is a current-driven device. The turn-on module 3 is composed of a switch group and a current source connected in series. When the switch group is closed, the current source of the turn-on module 3 injects strong trigger current pulses with a high rising rate and a high amplitude into the gate G of the power semiconductor device 1 multiple times to ensure uniform conduction of the power semiconductor device 1 and prevent current concentration from causing turn-on thermal failure of the power semiconductor device 1; when the switch group is opened, the current source of the turn-on module 3 is bypassed to prevent affecting the normal operation of other modules. The first turn-off module 2 is composed of a switch group and a negative voltage turn-off capacitor group connected in series. When the switch group is closed, the negative voltage turn-off capacitor group provides a reverse voltage bias for the gate-cathode to ensure reliable turn-off of the power semiconductor device 1, and a high-resistance state exists between the anode A and the cathode K. The maintenance module 5 is composed of a switch group and a current source connected in series. When the switch group is closed, the current source of the maintenance module 5 continuously injects a current with a constant amplitude into the gate G to ensure reliable conduction of the power semiconductor device 1 and prevent the power semiconductor device 1 from returning to the turn-off state due to insufficient anode current; when the switch group is opened, the current source of the maintenance module 5 is bypassed to prevent affecting the normal operation of other modules.

[0036] Preferably, as Figure 4 shown, the protection module 4 includes a voltage comparison unit 41 and a switch unit 42. Among them, the voltage comparison unit 41 and the switch unit 42 are connected in parallel between the G port and the K port of the protection module 4. The G port of the protection module 4 is connected to the gate of the power semiconductor device, and the K port of the protection module 4 is connected to the cathode of the power semiconductor device; among them, the voltage comparison unit 41 is used to generate a conduction signal of the switch unit 42 when the gate-cathode voltage of the power semiconductor device exceeds a preset threshold, and the switch unit 42 is used to achieve conduction according to the conduction signal, so that the G port and the K port of the protection module 4 are short-circuited, and is used to provide a closed loop for the current source of the turn-on module or the maintenance module.

[0037] As an alternative embodiment, as Figure 5As shown in the figure, the voltage comparison unit 41 includes a first switching diode 411 and a first clamping resistor 412, and the switching unit is a first semi-controlled thyristor 421; the anode of the first switching diode 411 and the first end of the first clamping resistor 412 are connected to the gate of the first semi-controlled thyristor 421, the cathode of the first switching diode 411 and the anode of the first semi-controlled thyristor 421 are connected to the G port of the protection module 4, the second end of the first clamping resistor 412 and the cathode of the first semi-controlled thyristor 421 are connected to the K port of the protection module 4, the G port of the protection module 4 is connected to the gate of the power semiconductor device, and the K port of the protection module 4 is connected to the cathode of the power semiconductor device.

[0038] When the power semiconductor device is not connected to the drive or the contact between the cathode inside the power semiconductor device package is unreliable, after the switch group of the turn-on module or the maintenance module is closed, the current source outputs an open circuit, and the voltage difference between the G port and the K port of the protection module 4 rises. When this voltage exceeds the operating voltage of the first switching diode 411, a current is generated and injected into the gate of the first semi-controlled thyristor 421 to make it conduct, providing a closed loop for the current source of the turn-on module or the maintenance module. The first semi-controlled thyristor 421 will continue to conduct until the output current of the turn-on module or the maintenance module drops to zero. While the first clamping resistor 412 provides a reference ground potential for the anode of the first switching diode 411, it keeps the first semi-controlled thyristor 421 blocked when the gate-cathode voltage of the power semiconductor device 1 is relatively low.

[0039] As another alternative embodiment, as Figure 6 shown in the figure, the voltage comparison unit 41 includes a second switching diode 413 and a second clamping resistor 414, and the switching unit is a second semi-controlled thyristor 422; the anode of the second switching diode 413 is connected to the gate of the second semi-controlled thyristor 422, the cathode of the second switching diode 413, the first end of the second clamping resistor 414, and the anode of the second semi-controlled thyristor 422 are connected to the G port of the protection module 4, the second end of the second clamping resistor 414 and the cathode of the second semi-controlled thyristor 422 are connected to the K port of the protection module 4, the G port of the protection module 4 is connected to the gate of the power semiconductor device, and the K port of the protection module 4 is connected to the cathode of the power semiconductor device.

[0040] When the power semiconductor device is not connected to the drive or the cathode contact inside the power semiconductor device package is unreliable, after the switch group of the turn-on module or the hold module is closed, the current source first conducts current through the second clamping resistor 414. The voltage drop of this current across the second clamping resistor 414 causes the voltage difference between the G port and the K port of the protection module 4 to rise. When this voltage exceeds the operating voltage of the second zener diode 413, a current is generated and injected into the gate of the second semi-controlled thyristor 422 to turn it on, providing a closed loop for the current source of the turn-on module or the hold module. The second semi-controlled thyristor 422 will continue to conduct until the output current of the turn-on module or the hold module drops to zero.

[0041] As another optional implementation, as Figure 7 shown, the voltage comparison unit 41 includes a first voltage-dividing resistor 415 and a second voltage-dividing resistor 416, and the switch unit is a metal-oxide-semiconductor field-effect transistor (MOSFET) 423; the second end of the first voltage-dividing resistor 415 and the first end of the second voltage-dividing resistor 416 are connected to the gate of the MOSFET 423, the first end of the first voltage-dividing resistor 415 and the drain of the MOSFET 423 are connected to the G port of the protection module 4, the second end of the second voltage-dividing resistor 416 and the source of the MOSFET 423 are connected to the K port of the protection module 4, the G port of the protection module 4 is connected to the gate of the power semiconductor device, and the K port of the protection module 4 is connected to the cathode of the power semiconductor device.

[0042] When the power semiconductor device is not connected to the drive or the cathode contact inside the power semiconductor device package is unreliable, after the switch group of the turn-on module or the hold module is closed, the current source first conducts current through the series branch composed of the first voltage-dividing resistor 415 and the second voltage-dividing resistor 416. The voltage drop of this current across the series branch causes the voltage difference between the G port and the K port of the protection module 4 to rise, and the voltage drop of this current across the second voltage-dividing resistor 416 causes the gate voltage of the MOSFET 423 to rise. When this voltage exceeds the threshold voltage of the MOSFET 423, the MOSFET 423 conducts, providing a closed loop for the current source of the turn-on module or the hold module.

[0043] Preferably, as Figure 8As shown, the protection module 4 further includes a gate trigger unit 43, and the gate trigger unit 43 is connected between the voltage comparison unit 41 and the switch unit 42; wherein, the voltage comparison unit 41 is configured to generate a conduction signal for the switch unit 42 when the gate-cathode voltage of the power semiconductor device exceeds a preset threshold, and the gate trigger unit 43 is configured to perform logic operation or power amplification on the conduction signal. When the switch unit 42 is difficult to be directly driven and controlled by the voltage comparison unit 41, the gate trigger unit 43 can be added to realize the control of the switch unit 42; the switch unit 42 is configured to conduct according to the conduction signal, short-circuit the G port and the K port of the protection module 4, and provide a closed loop for the current source of the turn-on module or the maintenance module.

[0044] As an alternative embodiment, as Figure 9 shown, the voltage comparison unit 41 includes a third voltage-dividing resistor 417 and a fourth voltage-dividing resistor 418, the switch unit is a relay 424, and the gate trigger unit is a power amplifier 431 composed of an operational amplifier; the second end of the third voltage-dividing resistor 417 and the first end of the fourth voltage-dividing resistor 418 are connected to the positive input terminal of the power amplifier 431, the negative input terminal and the output terminal of the power amplifier 431 are connected to the control port of the relay 424, the first end of the third voltage-dividing resistor 417 and the first end of the main circuit of the relay 424 are connected to the G port of the protection module 4, the second end of the fourth voltage-dividing resistor 418 and the second end of the main circuit of the relay 4224 are connected to the K port of the protection module 4, the G port of the protection module 4 is connected to the gate of the power semiconductor device, and the K port of the protection module 4 is connected to the cathode of the power semiconductor device.

[0045] When the power semiconductor device is not connected to the drive or the contact between the cathode inside the power semiconductor device package is unreliable, after the switch group of the turn-on module or the maintenance module is closed, the current source first continues to flow through the series branch composed of the third voltage-dividing resistor 417 and the fourth voltage-dividing resistor 418. The voltage drop of this current on the series branch causes the voltage difference between the G port and the K port of the protection module 4 to rise, and the voltage drop of this current on the fourth voltage-dividing resistor 418 causes the voltage at the positive input terminal and the output terminal of the operational amplifier 431 to rise. When this voltage exceeds the operating voltage of the relay 424, the relay 424 conducts, providing a closed loop for the current source of the turn-on module or the maintenance module.

[0046] The present invention also provides a power semiconductor device, which can be any one of GTO, GCT, IGCT, semi-controlled thyristor, and ETO. When the power semiconductor device is GTO, GCT, IGCT or semi-controlled thyristor, its drive protection circuit can include the circuit as Figure 2 shown; when the power semiconductor device is ETO, its drive protection circuit can include the circuit as Figure 3 shown.

[0047] The present invention also provides an electronic device, which includes the power semiconductor device described in the present invention. The electronic device can be a converter, a rectifier, an electronic switch, a controller, a transformer, etc.

[0048] Verified by experiments, for the drive protection circuit, the power semiconductor device and its application of the present invention, when the power semiconductor device is not connected to the drive or the internal cathode contact of the power semiconductor device package is unreliable, a short circuit occurs between the G port and the K port of the protection module, providing a closed loop for the current source of the turn-on module or the maintenance module, thereby effectively ensuring the operation safety of the device chip, the package and the drive itself.

[0049] The specific embodiments described above further elaborate on the purpose, technical solutions and beneficial effects of the present invention. It should be understood that the above are only specific embodiments of the present invention and are not used to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

[0050] The "first", "second",... in the present invention are only used to distinguish different devices / components, and are not used to mark the connection order of the devices / components, nor are they used to limit the number of devices / components.

Claims

1. A driving protection circuit for a power semiconductor device, characterized in that: It comprises an opening module, a first closing module and a protection module, wherein the opening module, the first closing module and the protection module are connected in parallel between the gate and cathode of the power semiconductor device, wherein the protection module is used to protect the power semiconductor device when the gate cathode voltage of the power semiconductor device exceeds a preset threshold value; Wherein, the protection module comprises a voltage comparison unit and a switch unit, the voltage comparison unit and the switch unit are connected in parallel between the gate and cathode of the power semiconductor device, the voltage comparison unit is used to generate a conduction signal of the switch unit when the gate cathode voltage of the power semiconductor device exceeds a preset threshold value, and the switch unit is used to conduct according to the conduction signal to form a closed loop between the gate and cathode of the power semiconductor device; Wherein, the voltage comparison unit includes a first breakover diode and a first clamping resistor, the switch unit includes a first current-driven semiconductor switch, the anode of the first breakover diode and the first end of the first clamping resistor are connected to the gate of the first current-driven semiconductor switch, the cathode of the first breakover diode and the anode of the first current-driven semiconductor switch are connected to the gate of the power semiconductor device, and the second end of the first clamping resistor and the cathode of the first current-driven semiconductor switch are connected to the cathode of the power semiconductor device.

2. The driving protection circuit according to claim 1, characterized in that: The voltage comparison unit includes a second breakover diode and a second clamping resistor, the switch unit includes a second current-driven semiconductor switch, the anode of the second breakover diode is connected to the gate of the second current-driven semiconductor switch, the cathode of the second breakover diode, the first end of the second clamping resistor and the anode of the second current-driven semiconductor switch are connected to the gate of the power semiconductor device, and the second end of the second clamping resistor and the cathode of the second current-driven semiconductor switch are connected to the cathode of the power semiconductor device.

3. The driving protection circuit according to claim 1, characterized in that: The voltage comparison unit includes a first voltage-dividing resistor and a second voltage-dividing resistor, and the switch unit includes a voltage-driven semiconductor switch, the second end of the first voltage-dividing resistor and the first end of the second voltage-dividing resistor are connected to the gate of the voltage-driven semiconductor switch, the first end of the first voltage-dividing resistor and the drain of the voltage-driven semiconductor switch are connected to the gate of the power semiconductor device, and the second end of the second voltage-dividing resistor and the source of the voltage-driven semiconductor switch are connected to the cathode of the power semiconductor device.

4. The driving protection circuit according to claim 1, characterized in that: The protection module further includes a gate trigger unit, which is connected between the voltage comparison unit and the switch unit and is used to perform logic operation or power amplification on the conduction signal.

5. The driving protection circuit according to claim 4, characterized in that: The voltage comparison unit includes a third voltage-dividing resistor and a fourth voltage-dividing resistor, the switch unit includes a relay, and the gate trigger unit includes a power amplifier; the second end of the third voltage-dividing resistor and the first end of the fourth voltage-dividing resistor are connected to the positive input end of the power amplifier, the negative input end and the output end of the power amplifier are connected to the control port of the relay, the first end of the third voltage-dividing resistor and the first end of the relay main circuit are connected to the gate of the power semiconductor device, and the second end of the fourth voltage-dividing resistor and the second end of the relay main circuit are connected to the cathode of the power semiconductor device; the power amplifier is composed of an operational amplifier.

6. The driving protection circuit according to any one of claims 1 to 5, characterized in that: The driving protection circuit further comprises a maintaining module, which is connected in parallel between the gate and cathode of the power semiconductor device and is used to ensure reliable conduction of the power semiconductor device when a failure occurs in the opening module.

7. The driving protection circuit according to any one of claims 1 to 5, characterized in that: The driving protection circuit also includes a second shutdown module, wherein the first ends of the opening module, the first shutdown module and the protection module are connected to the gate of the power semiconductor device, the first end of the second shutdown module is connected to the cathode of the power semiconductor device, and the second end of the second shutdown module is connected to the second ends of the opening module, the first shutdown module and the protection module.

8. A power semiconductor device, characterized in that: The drive protection circuit comprises the drive protection circuit according to any one of claims 1 to 6, wherein the power semiconductor device is a GTO, a GCT, an IGCT or a semi-controlled thyristor.

9. A power semiconductor device, characterized in that: The driving protection circuit according to claim 7, wherein the power semiconductor device is an ETO.

10. An electronic device, characterized in that: Comprising the power semiconductor device according to claim 8 or 9.

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