Cold stamping die and preparation method thereof

Abstract

The present application relates to a cold stamping die, comprising: a die base; a first coating provided on the surface of the die base; a second coating provided on the surface of the first coating; and a third coating provided on the surface of the second coating, wherein the material of the first coating includes TiCN, the material of the second coating includes AlCrSiZrN, and the material of the third coating includes TiZrSiN. In the cold stamping die provided in the present application, the first coating has high hardness, providing good support for the second coating and the third coating; the second coating can prevent the first coating and the die base from being oxidized; the third coating has high hardness and low friction coefficient, and has very low wear during stamping operations, and the cold stamping die is not prone to stress concentration during the stamping process, which makes the cold stamping die less prone to deformation, fatigue, and fracture; in addition, the cold stamping die is also resistant to oxidation and wear, so the cold stamping die has a longer service life.

Description

Technical Field

[0001] The present application relates to a stamping process, and in particular to a stamping die. Background Art

[0002] Cold stamping dies are typically specialized tools installed on a press to apply deformation forces at room temperature to achieve a desired shape, size, and performance. During casting production, cold stamping dies must withstand loads such as impact, vibration, friction, high pressure, tension, bending, and torsion, and even operate at elevated temperatures (e.g., cold extrusion). These complex operating conditions can easily lead to wear, fatigue, fracture, and deformation. Therefore, the quality of the die directly impacts the quality of the subsequent casting.

[0003] Deformation, wear, fatigue, and fracture are the main failure modes of cold stamping dies and are the main factors affecting their service life. With the rapid development of the automotive industry and the improvement of process technology, the problem of insufficient service life of existing cold stamping dies has had a certain impact on the operating efficiency of existing automotive processing technology. Summary of the Invention

[0004] The embodiments of the present application provide a cold stamping die and a preparation method thereof to solve the technical problems that cold stamping dies are prone to deformation, wear, fatigue and fracture, and have a short service life.

[0005] In a first aspect, an embodiment of the present application provides a cold stamping die, the cold stamping die comprising:

[0006] mold base;

[0007] a first coating provided on the surface of the mold base;

[0008] a second coating provided on the surface of the first coating;

[0009] a third plating layer provided on the surface of the second plating layer,

[0010] The material of the first coating layer includes TiCN, the material of the second coating layer includes AlCrSiZrN, and the material of the third coating layer includes TiZrSiN.

[0011] In some embodiments of the present application, the thickness of the first coating layer is 0.6 to 2 μm; and / or,

[0012] The thickness of the second coating is 0.6 to 2 μm; and / or,

[0013] The thickness of the third coating is 0.2-1 μm.

[0014] In some embodiments of the present application, the first coating layer contains 70% to 95% Ti and 5% to 30% C in terms of mass percentage of Ti and C elements; and / or

[0015] In the second coating, based on the mass percentage of Al, Cr, Si and Zr, the second coating contains 30% to 65% Al, 15% to 25% Cr, 2.5% to 5% Si and 5% to 10% Zr; and / or,

[0016] In the third coating layer, based on the mass percentage of Ti, Zr and Si elements, the third coating layer contains 50% to 90% of Ti, 5% to 10% of Zr and 5% to 30% of Si.

[0017] In some embodiments of the present application, the surface hardness of the cold stamping die is HRC58-HRC62, and the surface roughness is Ra1-Ra0.8.

[0018] In a second aspect, an embodiment of the present application provides a method for preparing a cold stamping die, the method comprising the following steps:

[0019] providing a mold base;

[0020] Selecting a TiCN target material, depositing a first coating layer on the mold substrate by performing a first physical vapor deposition in a nitrogen atmosphere;

[0021] Selecting an AlCr target material and a SiZr target material, and depositing a second coating layer on the first coating layer by performing a second physical vapor deposition in a nitrogen atmosphere;

[0022] A TiZrSi target material is selected, and a third coating layer is deposited on the second coating layer by performing a third physical vapor deposition in a nitrogen atmosphere to obtain the cold stamping die.

[0023] In some embodiments of the present application, the temperature of the first physical vapor deposition is 300-500° C., and the nitrogen pressure is 1-6 Pa; and / or,

[0024] The temperature of the second physical vapor deposition is 300-500° C., and the nitrogen pressure is 1-6 Pa; and / or,

[0025] The temperature of the third physical vapor deposition is 300-500° C., and the nitrogen pressure is 1-6 Pa.

[0026] In some embodiments of the present application, the thickness of the first coating layer is 0.6 to 2 μm; and / or,

[0027] The thickness of the second coating is 0.6 to 2 μm; and / or,

[0028] The thickness of the third coating is 0.2-1 μm.

[0029] In some embodiments of the present application, the first coating layer contains 70% to 95% Ti and 5% to 30% C in terms of mass percentage of Ti and C elements; and / or

[0030] In the second coating, based on the mass percentage of Al, Cr, Si and Zr, the second coating contains 60% to 65% Al, 20% to 25% Cr, 2.5% to 5% Si and 5% to 10% Zr; and / or

[0031] In the third coating layer, based on the mass percentage of Ti, Zr and Si elements, the third coating layer contains 60% to 90% of Ti, 5% to 10% of Zr and 5% to 30% of Si.

[0032] In some embodiments of the present application, the method for preparing the cold stamping die further comprises the following steps:

[0033] The cold stamping die is sandblasted.

[0034] In some embodiments of the present application, the surface hardness of the cold stamping die is HRC58-HRC62, and the surface roughness is Ra1-Ra0.8.

[0035] The above technical solution provided by the embodiment of the present application has the following advantages compared with the prior art:

[0036] The cold stamping die provided in the embodiment of the present application, the material of the first coating includes TiCN, which has high hardness and can provide good support for the second coating and the third coating; the second coating has high hardness and has a good barrier effect on the diffusion of oxygen, preventing the first coating and the die base from being oxidized; the third coating has high hardness and low friction coefficient, and the wear during the stamping operation is very low, and the cold stamping die is not prone to stress concentration during the stamping process, which makes the cold stamping die not easy to deform, fatigue, or break; in addition, the cold stamping die is also resistant to oxidation and wear, so the cold stamping die has a longer service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0038] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0039] Figure 1 A schematic flow chart of a method for preparing a cold stamping die provided in an embodiment of the present application. DETAILED DESCRIPTION

[0040] To make the purpose, technical solutions, and advantages of the embodiments of this application more clear, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0041] Unless otherwise specified, the terms used herein should be understood as having the same meaning as commonly used in the art. Therefore, unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs. In the event of any conflict, the present specification shall take precedence.

[0042] Unless otherwise specified, all raw materials, reagents, instruments and equipment used in this application can be purchased from the market or prepared by existing methods.

[0043] Existing cold stamping dies have the technical problem of being prone to deformation, wear, fatigue and fracture, resulting in a short service life.

[0044] The technical solutions provided in the embodiments of this application are intended to solve the above technical problems, and the overall idea is as follows:

[0045] In a first aspect, an embodiment of the present application provides a cold stamping die, the cold stamping die comprising:

[0046] mold base;

[0047] a first coating provided on the surface of the mold base;

[0048] a second coating provided on the surface of the first coating;

[0049] a third plating layer provided on the surface of the second plating layer,

[0050] The material of the first coating layer includes TiCN, the material of the second coating layer includes AlCrSiZrN, and the material of the third coating layer includes TiZrSiN.

[0051] It should be noted that the types of coating materials involved in this application include TiCN, AlCrSiZrN, and TiZrSiN. Taking TiCN as an example, TiCN does not refer to a chemical formula but to an alloy component.

[0052] The material of the mold base can be selected from conventional materials in the art, for example, Cr12Mo1V1 mold steel or T10A mold steel.

[0053] The beneficial effect of including TiCN in the first coating layer is that it increases its hardness. Typically, TiCN has a hardness of 2300 to 3800 HV. The first coating layer serves as a support layer for the second and third coating layers, and its high hardness helps maintain a stable morphology for the second and third coating layers.

[0054] The second coating layer is made of AlCrSiZrN, which includes an AlN metallographic phase. AlN has high hardness. Furthermore, the dispersed CrZr metallographic phase in the AlCrSiZrN material refines the sintered Si grain size, making the second coating layer more compact and allowing the AlCrSiZrN material to easily form a very dense oxide film. This dense oxide film can block the diffusion of oxygen molecules, preventing further oxidation of the second coating layer. Furthermore, Zr can increase the hardness of the second coating layer.

[0055] The material of the third coating layer includes TiZrSiN, where Si can prevent the growth of TiN columnar crystals, forming a multiphase mixture, which can increase the hardness of the third coating layer and improve the friction and wear performance of the third coating layer. ZrSiN metallographically characterized by a low friction coefficient. In addition, the Si element also forms hydrated amorphous silicon oxide with a low friction coefficient during the wear of the third coating layer. Overall, the third coating layer has high hardness and low friction coefficient, which will make the cold stamping die less prone to stress concentration during stamping operations and have very low wear.

[0056] The material of the first coating in the present application includes TiCN, which has high hardness and can provide good support for the second coating and the third coating; the second coating has high hardness and has a good barrier effect on the diffusion of oxygen, preventing the first coating and the mold base from being oxidized; the third coating has high hardness and low friction coefficient, and the wear during stamping operation is very low, and the cold stamping die is not prone to stress concentration during the stamping process, which makes the cold stamping die not easy to deform, fatigue, or break; in addition, the cold stamping die is also resistant to oxidation and wear, so the cold stamping die has a longer service life.

[0057] In some embodiments of the present application, the thickness of the first coating layer is 0.6 to 2 μm; and / or,

[0058] The thickness of the second coating is 0.6 to 2 μm; and / or,

[0059] The thickness of the third coating is 0.2-1 μm.

[0060] As an example, the thickness of the first coating layer may be 0.6 um, 1 um, 1.4 um, or 2 um.

[0061] As an example, the thickness of the second coating layer may be 0.6 um, 1 um, 1.4 um, or 2 um.

[0062] As an example, the thickness of the third coating layer may be 0.2um, 0.4um, 0.6um, 0.8um, or 1um.

[0063] In some embodiments of the present application, the first coating layer contains 70% to 95% Ti and 5% to 30% C in terms of mass percentage of Ti and C elements; and / or

[0064] In the second coating, based on the mass percentage of Al, Cr, Si and Zr, the second coating contains 30% to 65% Al, 15% to 25% Cr, 2.5% to 5% Si and 5% to 10% Zr; and / or,

[0065] In the third coating layer, based on the mass percentage of Ti, Zr and Si elements, the third coating layer contains 50% to 90% of Ti, 5% to 10% of Zr and 5% to 30% of Si.

[0066] It's easy to understand that the higher aluminum content in the second coating changes the crystal structure of the AlN from a cubic lattice to a hexagonal lattice. Hexagonal AlN maintains high red hardness, allowing the second coating to maintain its high hardness even when the surface temperature of the cold stamping die is high. It should be noted that although the cold stamping process does not additionally heat the cold stamping die or the workpiece to be stamped, the mechanical energy generated by stamping will also cause the cold stamping die temperature to rise.

[0067] The friction coefficient of the third coating layer decreases with the increase of Si. This is because Si element forms hydrated amorphous silicon oxide with a low friction coefficient during the wear process of the third coating layer.

[0068] In some embodiments of the present application, the surface hardness of the cold stamping die is HRC58-HRC62, and the surface roughness is Ra1-Ra0.8.

[0069] In the second aspect, the present invention provides a method for preparing a cold stamping die. Figure 1 The preparation method of the cold stamping die comprises the following steps:

[0070] S1: Provide a mold base;

[0071] S2: Selecting a TiCN target material, and depositing a first coating layer on the mold substrate by performing a first physical vapor deposition in a nitrogen atmosphere;

[0072] S3: Selecting an AlCr target and a SiZr target, and depositing a second coating layer on the first coating layer by performing a second physical vapor deposition in a nitrogen atmosphere;

[0073] S4: Select a TiZrSi target material, and deposit a third coating layer on the second coating layer by performing a third physical vapor deposition in a nitrogen atmosphere to obtain the cold stamping die.

[0074] It is easy to understand that the cold stamping die described in any embodiment of the first aspect of the present application can be prepared by the preparation method of the cold stamping die described in a certain embodiment of the second aspect of the present application. The preparation method of the cold stamping die described in any embodiment of the second aspect of the present application can prepare the cold stamping die described in a certain embodiment of the first aspect of the present application.

[0075] In some embodiments of the present application, the temperature of the first physical vapor deposition is 300-500° C., and the nitrogen pressure is 1-6 Pa; and / or,

[0076] The temperature of the second physical vapor deposition is 300-500° C., and the nitrogen pressure is 1-6 Pa; and / or,

[0077] The temperature of the third physical vapor deposition is 300-500° C., and the nitrogen pressure is 1-6 Pa.

[0078] As an example, the temperature of the first physical vapor deposition can be 300°C, 350°C, 400°C, 450°C, or 500°C, and the nitrogen pressure can be 1Pa, 2Pa, 3Pa, 4Pa, 5Pa, or 6Pa.

[0079] As an example, the temperature of the second physical vapor deposition can be 300°C, 350°C, 400°C, 450°C, or 500°C, and the nitrogen pressure can be 1Pa, 2Pa, 3Pa, 4Pa, 5Pa, or 6Pa.

[0080] As an example, the temperature of the third physical vapor deposition can be 300°C, 350°C, 400°C, 450°C, or 500°C, and the nitrogen pressure can be 1Pa, 2Pa, 3Pa, 4Pa, 5Pa, or 6Pa.

[0081] In some embodiments of the present application, the thickness of the first coating layer is 0.6 to 2 μm; and / or,

[0082] The thickness of the second coating is 0.6 to 2 μm; and / or,

[0083] The thickness of the third coating is 0.2-1 μm.

[0084] As an example, the thickness of the first coating layer may be 0.6 um, 1 um, 1.4 um, or 2 um.

[0085] As an example, the thickness of the second coating layer may be 0.6 um, 1 um, 1.4 um, or 2 um.

[0086] As an example, the thickness of the third coating layer may be 0.2um, 0.4um, 0.6um, 0.8um, or 1um.

[0087] In some embodiments of the present application, the first coating layer contains 70% to 95% Ti and 5% to 30% C in terms of mass percentage of Ti and C elements; and / or

[0088] In the second coating, based on the mass percentage of Al, Cr, Si and Zr, the second coating contains 30% to 65% Al, 15% to 25% Cr, 2.5% to 5% Si and 5% to 10% Zr; and / or,

[0089] In the third coating layer, based on the mass percentage of Ti, Zr and Si elements, the third coating layer contains 50% to 90% of Ti, 5% to 10% of Zr and 5% to 30% of Si.

[0090] It's easy to understand that the higher aluminum content in the second coating changes the crystal structure of the AlN from a cubic lattice to a hexagonal lattice. Hexagonal AlN maintains high red hardness, allowing the second coating to maintain its high hardness even when the surface temperature of the cold stamping die is high. It should be noted that although the cold stamping process does not additionally heat the cold stamping die or the workpiece to be stamped, the mechanical energy generated by stamping will also cause the cold stamping die temperature to rise.

[0091] The friction coefficient of the third coating layer decreases with the increase of Si. This is because Si element forms hydrated amorphous silicon oxide with a low friction coefficient during the wear process of the third coating layer.

[0092] In some embodiments of the present application, the method for preparing the cold stamping die further comprises the following steps:

[0093] S5: performing sandblasting on the cold stamping die.

[0094] As an example, the blasting material may be at least one of copper ore sand, quartz sand, corundum, iron sand or Hainan sand.

[0095] The present application will be further described below in conjunction with specific examples. It should be understood that these examples are intended to illustrate the present application only and are not intended to limit the scope of the present application. The experimental methods in the following examples where specific conditions are not specified are generally measured according to industry standards. If there are no corresponding industry standards, then the methods are carried out according to general international standards, conventional conditions, or the conditions recommended by the manufacturer.

[0096] Example 1

[0097] This embodiment provides a method for preparing a cold stamping die, which is specifically as follows:

[0098] Providing a clean mold base, wherein the material of the mold base is Cr12Mo1V1 mold steel or T10A mold steel;

[0099] The mold substrate is placed in the coating machine, and the furnace chamber in the coating machine is vacuumed to 5×10 -3 Pa, and heating the temperature in the furnace chamber to 500° C., then introducing argon (Ar) with a purity of 99.999% to fix the pressure in the furnace chamber to 1 Pa, then lowering the negative bias voltage to 200 V and introducing nitrogen to fix the pressure in the furnace chamber to 6 Pa, turning on a target comprising a TiCN target material, the arc source current of the TiCN target material being 200 A, and depositing the first coating on the surface of the substrate for 50 minutes;

[0100] Then, an AlCr target and a SiZr target are turned on, wherein the arc source current of the AlCr target and the SiZr target is 200 A, and the second coating layer is deposited on the surface of the first coating layer for 60 minutes;

[0101] Then, the TiZrSi target was turned on, wherein the arc source current of the TiZrSi target was 200 A, and the third coating layer was deposited on the surface of the second coating layer for 60 minutes.

[0102] The thickness of the first coating layer is 2 μm, the thickness of the second coating layer is 2 μm, and the thickness of the third coating layer is 1 μm.

[0103] Through SEM-EDS testing of the cross-section sample of the cold stamping die, it was found that: in the first coating, calculated by the mass percentage of Ti and C elements, the first coating contains 70% to 95% Ti and 5% to 30% C; in the second coating, calculated by the mass percentage of Al, Cr, Si, and Zr elements, the second coating contains 30% to 65% Al, 15% to 25% Cr, 2.5% to 5% Si, and 5% to 10% Zr; in the third coating, calculated by the mass percentage of Ti, Zr, and Si elements, the third coating contains 90% Ti, 5% Zr, and 5% Si.

[0104] Example 2

[0105] This embodiment provides a method for preparing a cold stamping die, which is specifically as follows:

[0106] Providing a clean mold base, wherein the material of the mold base is Cr12Mo1V1 mold steel or T10A mold steel;

[0107] The mold substrate is placed in the coating machine, and the furnace chamber in the coating machine is vacuumed to 5×10 -3 Pa, and heating the temperature in the furnace chamber to 500° C., then introducing argon (Ar) with a purity of 99.999% to fix the pressure in the furnace chamber to 1 Pa, then lowering the negative bias voltage to 200 V and introducing nitrogen to fix the pressure in the furnace chamber to 6 Pa, turning on a target comprising a TiCN target material, the arc source current of the TiCN target material being 200 A, and depositing the first coating on the surface of the substrate for 50 minutes;

[0108] Then, an AlCr target and a SiZr target are turned on, wherein the arc source current of the AlCr target and the SiZr target is 200 A, and the second coating layer is deposited on the surface of the first coating layer for 60 minutes;

[0109] Then, the TiZrSi target was turned on, wherein the arc source current of the TiZrSi target was 200 A, and the third coating layer was deposited on the surface of the second coating layer for 60 minutes.

[0110] The thickness of the first coating layer is 2 μm, the thickness of the second coating layer is 2 μm, and the thickness of the third coating layer is 1 μm.

[0111] Through SEM-EDS testing of the cross-section sample of the cold stamping die, it was found that: in the first coating, based on the mass percentage of Ti and C elements, the first coating contains 80% Ti and 20% C; in the second coating, based on the mass percentage of Al, Cr, Si, and Zr elements, the second coating contains 64% Al, 25% Cr, 3% Si, and 8% Zr; in the third coating, based on the mass percentage of Ti, Zr, and Si elements, the third coating contains 70% Ti, 10% Zr, and 20% Si.

[0112] Example 3

[0113] This embodiment provides a method for preparing a cold stamping die, which is specifically as follows:

[0114] Providing a clean mold base, wherein the material of the mold base is Cr12Mo1V1 mold steel or T10A mold steel;

[0115] The mold substrate is placed in the coating machine, and the furnace chamber in the coating machine is vacuumed to 5×10 -3 Pa, and heating the temperature in the furnace chamber to 500° C., then introducing argon (Ar) with a purity of 99.999% to fix the pressure in the furnace chamber to 1 Pa, then lowering the negative bias voltage to 200 V and introducing nitrogen to fix the pressure in the furnace chamber to 6 Pa, turning on a target comprising a TiCN target material, the arc source current of the TiCN target material being 200 A, and depositing the first coating on the surface of the substrate for 50 minutes;

[0116] Then, an AlCr target and a SiZr target are turned on, wherein the arc source current of the AlCr target and the SiZr target is 200 A, and the second coating layer is deposited on the surface of the first coating layer for 60 minutes;

[0117] Then, the TiZrSi target was turned on, wherein the arc source current of the TiZrSi target was 200 A, and the third coating layer was deposited on the surface of the second coating layer for 60 minutes.

[0118] The thickness of the first coating layer is 2 μm, the thickness of the second coating layer is 2 μm, and the thickness of the third coating layer is 1 μm.

[0119] Through SEM-EDS testing of the cross-section sample of the cold stamping die, it was found that: in the first coating, calculated by the mass percentage of Ti and C elements, the first coating contains 70% Ti and 30% C; in the second coating, calculated by the mass percentage of Al, Cr, Si, and Zr elements, the second coating contains 65% Al, 22.5% Cr, 2.5% Si, and 10% Zr; in the third coating, calculated by the mass percentage of Ti, Zr, and Si elements, the third coating contains 60% Ti, 10% Zr, and 30% Si.

[0120] Example 4

[0121] The difference between this embodiment and embodiment 1 is that:

[0122] The arc source current of the TiCN target is 50 A, and the first coating layer is deposited on the surface of the substrate for 20 minutes.

[0123] The arc source current of the AlCr target and the SiZr target was 50 A, and the second coating layer was deposited on the surface of the first coating layer for 30 minutes.

[0124] The arc source current of the TiZrSi target is 50 A, and the third coating layer is deposited on the surface of the second coating layer for 30 minutes.

[0125] The thickness of the first coating layer is 0.6 um, the thickness of the second coating layer is 0.6 um, and the thickness of the third coating layer is 0.2 um.

[0126] Related experiments and effect data:

[0127] The surface hardness of the cold stamping dies of Examples 1 to 3 was measured by the Rockwell hardness test method to be 58.3HRC, 61.7HRC, and 60HRC, respectively.

[0128] The surface roughness Ra of the cold stamping dies of Examples 1 to 3 measured by the stylus method was 1, 0.9, and 0.8, respectively.

[0129] The cold stamping dies of Examples 1 to 3 are used for the stamping of bipolar plates of fuel cell stacks. Practical operating experience shows that the service life of Cr12Mo1V1 die steel dies or T10A die steel dies without the first, second and third coating layers is between 5,000 and 8,000 stampings. The service life of the cold stamping dies of Examples 1 to 3 is between 18,000 and 20,000 times. The cold stamping die of Example 4 has the thinnest coating thickness, and its service life has reached more than 10,000 times. This shows that the first, second and third coating layers in Examples 1 to 3 have a significant effect on improving the life of the cold stamping die.

[0130] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity and should not be understood as a hard limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numbers within the range. For example, the description of a range from 1 to 6 should be considered to have specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which applies regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0131] In this application, unless otherwise indicated, directional terms such as "upper" and "lower" refer specifically to the directions of the drawings in the accompanying drawings. In addition, in the description of this application specification, the terms "include", "comprise", etc. mean "including but not limited to". Moreover, the terms "include", "comprises", or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article, or device. In the absence of further restrictions, the elements defined by the phrase "include..." do not exclude the presence of other identical elements in the process, method, article, or device comprising the elements. In this document, relational terms such as "first" and "second" are merely used to distinguish one entity or operation from another, and do not necessarily require or imply any actual relationship or order between these entities or operations. In this document, "and / or" describes the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can mean: A exists alone, A and B exist simultaneously, or B exists alone. For the association relationship of more than three associated objects described with "and / or", it means that any one of these three associated objects can exist alone, or any at least two of them exist at the same time. For example, for A, and / or B, and / or C, it can be represented that any one of A, B, and C exists alone, or any two of them exist at the same time, or three of them exist at the same time. In this article, "at least one" refers to one or more, and "multiple" refers to two or more. "At least one", "the following at least one (individual)" or similar expressions refer to any combination of these items, including any combination of single item (individual) or plural items (individual). For example, "at least one (individual) of a, b, or c", or "at least one (individual) of a, b, and c", can all represent: a, b, c, ab (i.e., a and b), ac, bc or abc, where a, b, c can be single or multiple, respectively.

[0132] The foregoing is merely a list of specific embodiments of the present application, intended to enable those skilled in the art to understand or implement the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the embodiments shown herein, but is intended to conform to the broadest scope consistent with the principles and novel features of the present application.

Claims

1. A cold stamping die, characterized in that: The cold stamping die comprises: mold base; a first coating provided on the surface of the mold base; a second coating provided on the surface of the first coating; a third plating layer provided on the surface of the second plating layer, The material of the first coating layer is TiCN, the material of the second coating layer is AlCrSiZrN, and the material of the third coating layer is TiZrSiN.

2. The cold stamping die according to claim 1, characterized in that: The thickness of the first coating is 0.6-2 μm; and / or, The thickness of the second coating is 0.6-2 μm; and / or, The thickness of the third coating is 0.2-1 μm.

3. The cold stamping die according to claim 1, characterized in that: In the first coating, the first coating contains 70% to 95% of Ti and 5% to 30% of C in terms of mass percentage of Ti and C elements; and / or In the second coating, based on the mass percentage of Al, Cr, Si and Zr elements, the second coating contains 30% to 65% Al, 15% to 25% Cr, 2.5% to 5% Si, and 5% to 10% Zr; and / or, In the third coating layer, based on the mass percentage of Ti, Zr and Si elements, the third coating layer contains 50% to 90% of Ti, 5% to 10% of Zr and 5% to 30% of Si.

4. The cold stamping die according to claim 1, characterized in that: The surface hardness of the cold stamping die is HRC58-HRC62, and the surface roughness is Ra1-Ra0.

8.

5. A method for preparing a cold stamping die, characterized in that: The preparation method of the cold stamping die comprises the following steps: providing a mold base; Selecting a TiCN target material, depositing a first coating layer on the mold substrate by performing a first physical vapor deposition in a nitrogen atmosphere; Selecting an AlCr target material and a SiZr target material, and depositing a second coating layer on the first coating layer by performing a second physical vapor deposition in a nitrogen atmosphere; A TiZrSi target material is selected, and a third coating layer is deposited on the second coating layer by performing a third physical vapor deposition in a nitrogen atmosphere to obtain the cold stamping die.

6. The method for preparing a cold stamping die according to claim 5, characterized in that: The temperature of the first physical vapor deposition is 300-500° C., and the nitrogen pressure is 1-6 Pa; and / or, The temperature of the second physical vapor deposition is 300-500° C., and the nitrogen pressure is 1-6 Pa; and / or, The temperature of the third physical vapor deposition is 300-500° C., and the nitrogen pressure is 1-6 Pa.

7. The method for preparing a cold stamping die according to claim 5, characterized in that: The thickness of the first coating is 0.6-2 μm; and / or, The thickness of the second coating is 0.6-2 μm; and / or, The thickness of the third coating is 0.2-1 μm.

8. The method for preparing a cold stamping die according to claim 5, characterized in that: In the first coating, the first coating contains 70% to 95% of Ti and 5% to 30% of C in terms of mass percentage of Ti and C elements; and / or In the second coating, based on the mass percentage of Al, Cr, Si and Zr elements, the second coating contains 60% to 65% Al, 20% to 25% Cr, 2.5% to 5% Si, and 5% to 10% Zr; and / or, In the third coating layer, based on the mass percentage of Ti, Zr and Si elements, the third coating layer contains 60% to 90% of Ti, 5% to 10% of Zr and 5% to 30% of Si.

9. The method for preparing a cold stamping die according to claim 5, characterized in that: The surface hardness of the cold stamping die is HRC58-HRC62, and the surface roughness is Ra1-Ra0.8.

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