A hot wire module and chemical vapor deposition apparatus

Abstract

The application provides a hot-wire module and a chemical vapor deposition device, and belongs to the field of hot-wire chemical vapor deposition. The hot-wire module comprises a first hot-wire array, a second hot-wire array, a first support structure and a second support structure. The first support structure comprises a plurality of first fixing columns, the plurality of first fixing columns are arranged at intervals along a second direction, the second support structure comprises a plurality of second fixing columns, the plurality of second fixing columns are arranged at intervals along the second direction, and the first hot-wire array and the second hot-wire array are respectively formed at two ends of the plurality of first fixing columns and the plurality of second fixing columns along a third direction. The hot-wire module provided by the application can realize the simultaneous growth of diamond films on two surfaces of a substrate, greatly improves the growth efficiency of an HFCVD device, and is modularly expanded. Further, by adopting a double-layer airflow technology, efficient doping of the diamond film can be realized, and the cost of environmental protection and safety is effectively reduced.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of hot filament chemical vapor deposition, and particularly relates to a hot filament module and a chemical vapor deposition device. BACKGROUND

[0002] Hot Filament Chemical Vapor Deposition (HFCVD) is a technology for preparing diamond thin films, which has the advantages of high deposition rate, high quality of deposited thin films, and wide application range.

[0003] At present, the hot filament chemical vapor deposition device usually adopts multiple tungsten filaments as high-temperature heating elements (i.e., hot filaments), which are connected by a complex contact type tensile parallel arrangement to form a hot filament array. Specifically, the multiple hot filaments are fixed and electrically contacted at both ends by precise clamps or connection points in a tensile state, and then connected in parallel to the positive and negative poles of a power supply. In the process of growing doped diamond thin films, the substrate is arranged at the bottom of the hot filament array, and the reaction gas and the doping gas flow to the hot filament array, and then flow to the substrate below the hot filament array after being excited by the high-temperature hot filament, so as to deposit and grow doped diamond thin films on the surface of the substrate.

[0004] However, this arrangement of hot filaments has very high requirements for electrical contact points and large-current power supplies, and the arrangement of hot filaments is complex, not easy to maintain and expand. Moreover, in the process of growing diamond thin films, the substrate is mainly heated on one side, and the hot filament needs to be heated to a high temperature, resulting in low effective utilization rate of the hot filament and large loss. In addition, the reaction gas and the doping gas can only deposit on one heated surface of the substrate, and cannot simultaneously deposit thin films on both sides of the substrate, resulting in low efficiency of growing diamond thin films and doping, and high preparation cost. In summary, the HFCVD diamond thin film growth technology is seriously restricted in the industrialization process.

[0005] In view of the above, the present application is proposed. SUMMARY

[0006] The present application provides a hot filament module and a chemical vapor deposition device, which aims to solve or alleviate at least one of the defects existing in the prior art.

[0007] One aspect of the present application provides a hot wire module, comprising a first hot wire array, a second hot wire array, a first support structure and a second support structure; the first support structure and the second support structure are arranged in a first direction; the first support structure comprises a plurality of first fixing columns, the plurality of first fixing columns are arranged in a second direction; the second support structure comprises a plurality of second fixing columns, the plurality of second fixing columns are arranged in the second direction; the first hot wire array is formed by a hot wire alternately winding the plurality of first fixing columns and the plurality of second fixing columns in a third direction at one end; the second hot wire array is formed by the hot wire alternately winding the plurality of first fixing columns and the plurality of second fixing columns in the third direction at the other end.

[0008] In some embodiments, the first hot wire array and the second hot wire array are respectively formed by a single hot wire; or the first hot wire array and the second hot wire array are formed by the same hot wire.

[0009] In some embodiments, at least part of each first fixing column is located between two adjacent second fixing columns in the second direction; and / or the ratio of the spacing between two adjacent first fixing columns to the diameter of the first fixing column is 0.5-3; and / or the ratio of the spacing between two adjacent second fixing columns to the diameter of the second fixing column is 0.5-3; and / or the spacing between the first hot wire array and the second hot wire array in the third direction is 12-20 mm.

[0010] In some embodiments, the first support structure further comprises a first support plate, and each first fixing column penetrates the first support plate in the third direction and protrudes from the first support plate; the second support structure further comprises a second support plate, and each second fixing column penetrates the second support plate in the third direction and protrudes from the second support plate; the first support plate and the second support plate are located between the first hot wire array and the second hot wire array in the third direction.

[0011] In some embodiments, the hot wire module further comprises a first adjusting assembly connected to the first support structure, for driving the first support structure to move in the first direction to adjust the tension of the first hot wire array and the second hot wire array; and / or the hot wire module further comprises a second adjusting assembly connected to the second support structure, for driving the second support structure to move in the first direction to adjust the tension of the first hot wire array and the second hot wire array.

[0012] In some embodiments, the first adjusting assembly comprises a first mounting bracket and at least one first elastic member, the first elastic member is located between the first mounting bracket and the first support structure in the first direction and is connected to the first mounting bracket and the first support structure; and / or the second adjusting assembly comprises a second mounting bracket and at least one second elastic member, the second elastic member is located between the second mounting bracket and the second support structure in the first direction and is connected to the second mounting bracket and the second support structure.

[0013] In some embodiments, the hot-wire module further comprises a guide structure, the guide structure being slidably connected to the first support structure and the second support structure, so that the first support structure and the second support structure can slide relative to the guide structure in the first direction.

[0014] Another aspect of the present application provides a chemical vapor deposition apparatus, comprising at least two first delivery mechanisms, at least two electrode assemblies and at least one hot-wire module as described above; the two first delivery mechanisms are arranged in the third direction and are used for delivering reactants and / or dopants; the first hot-wire array and the second hot-wire array of each hot-wire module are connected to the two electrode assemblies at two ends in the second direction, respectively, and the first hot-wire array and the second hot-wire array are used for arranging a substrate therebetween; each hot-wire module is arranged between the two first delivery mechanisms, so that the substrate receives the reactants and / or dopants delivered by the first delivery mechanisms.

[0015] In some embodiments, the apparatus further comprises at least one second delivery mechanism; the second delivery mechanism is arranged at at least one end of the substrate opposite in the first direction or the second direction, and is used for delivering dopants to at least two surfaces of the substrate.

[0016] In some embodiments, the second delivery mechanism comprises two gas guide pipes; the two gas guide pipes are arranged in the third direction and are arranged between the substrate in the third direction; each gas guide pipe is provided with gas guide holes arranged in the length direction of the gas guide pipe, so as to deliver dopants to the surface of the substrate.

[0017] In some embodiments, the apparatus further comprises a reaction chamber, a growth box, a third delivery mechanism and an exhaust mechanism; the growth box is arranged in the reaction chamber, and the growth box is arranged with a substrate, a plurality of first delivery mechanisms, a plurality of second delivery mechanisms, a plurality of electrode assemblies and a plurality of hot-wire modules; the plurality of hot-wire modules are arranged in at least one direction and are arranged in the growth box; the exhaust mechanism and the third delivery mechanism are arranged outside the reaction chamber and are in communication with the reaction chamber, and the third delivery mechanism is in communication with each first delivery mechanism and each second delivery mechanism through the reaction chamber.

[0018] The hot-wire module and the chemical vapor deposition apparatus provided by the present application have at least the following beneficial effects compared with the prior art:

[0019] By designing the structure of the hot-wire module, the hot-wire module comprises a first hot-wire array, a second hot-wire array, a first support structure and a second support structure; wherein the first support structure and the second support structure are arranged at intervals along a first direction, the first support structure comprises a plurality of first fixing columns, the plurality of first fixing columns are arranged at intervals along a second direction, the second support structure comprises a plurality of second fixing columns, the plurality of second fixing columns are arranged at intervals along the second direction; the first hot-wire array is formed by a hot wire alternately winding around one end of the plurality of first fixing columns and the plurality of second fixing columns along the second direction in a third direction, and the second hot-wire array is formed by a hot wire alternately winding around the other end of the plurality of first fixing columns and the plurality of second fixing columns along the second direction in the third direction; thus, the first hot-wire array and the second hot-wire array are simultaneously supported by the first support structure and the second support structure, the substrate arranged between the first hot-wire array and the second hot-wire array can realize double-sided heating of the substrate during diamond film growth, at least two sides of the substrate simultaneously perform film deposition, and thus the effective utilization rate of the hot wire and the diamond film growth efficiency are effectively improved.

[0020] Especially crucially, the first hot-wire array and the second hot-wire array are both formed by a single hot wire alternately winding around the plurality of first fixing columns and the plurality of second fixing columns along the second direction, when the hot wire is powered, the first hot-wire array and the second hot-wire array only need two electrical contact points, which greatly reduces the demand for electrical contact points and large-current power supply, simplifies the layout form of the hot wire, further improves the effective utilization rate of the hot wire, and has lower loss; and the single hot wire is convenient to arrange, is easy to maintain, and is more easily modularized in the application of the hot-wire module in the chemical vapor deposition equipment, thereby significantly reducing the preparation cost of the diamond film and effectively promoting the industrialization process of the hot-wire diamond film growth technology.

[0021] Other features and advantages of the hot-wire module and the chemical vapor deposition equipment provided in the present application are further described in the subsequent specific embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the drawings needed in the specific embodiments or the prior art description will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0023] Figure 1 The structure schematic diagram of the hot-wire module provided for the embodiments of the present application;

[0024] Figure 2 The schematic diagram of the substrate arrangement in the hot-wire module provided for the embodiments of the present application;

[0025] Figure 3 A schematic view of a first conveying mechanism arrangement provided for an embodiment of the present application;

[0026] Figure 4 A schematic view of a hot wire module provided for an embodiment of the present application along a third direction view;

[0027] Figure 5 A schematic view of a structure of a chemical vapor deposition apparatus provided for an embodiment of the present application;

[0028] Figure 6 A schematic view of a structure of a chemical vapor deposition apparatus provided for an embodiment of the present application;

[0029] Figure 7 A schematic view of a second conveying mechanism arrangement provided for an embodiment of the present application;

[0030] Figure 8 A schematic view of a chemical vapor deposition apparatus provided for an embodiment of the present application along a second direction view.

[0031] Reference signs:

[0032] 100, hot wire module;

[0033] 111, first hot wire array; 112, second hot wire array;

[0034] 120, first support structure; 121, first fixing column; 122, first support plate;

[0035] 130, second support structure; 131, second fixing column; 132, second support plate;

[0036] 140, first adjusting assembly; 141, first mounting bracket; 142, first elastic member;

[0037] 150, second adjusting assembly; 151, second mounting bracket; 152, second elastic member;

[0038] 160, guide structure;

[0039] 10, chemical vapor deposition apparatus; 20, substrate;

[0040] 200, electrode assembly;

[0041] 300, first conveying mechanism; 400, second conveying mechanism; 410, gas guiding pipe; 411, gas guiding hole;

[0042] 500, reaction chamber; 600, growth box; 700, exhaust mechanism. DETAILED DESCRIPTION

[0043] In order to make the above and other features and advantages of the present application more comprehensible, the present application will be further described below with reference to the drawings. It should be understood that the specific embodiments given herein are by way of example only and are not intended to limit the present application.

[0044] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. It will be apparent, however, to one skilled in the art that the present application can be practiced without the specific details, as understood by one of ordinary skill in the art. In other instances, well-known steps or operations are not described in detail in order to avoid obscuring the present application.

[0045] In the description of the present application, it needs to be understood that, as the description of the orientation or positional relationship appears, such as the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., if no special description, it is understood that the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, only for the convenience of describing the present application and simplifying the description, and it is not indicated or implied that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0046] In addition, as the features limited with "first", "second" appear, only for the purpose of description, it cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features. The features limited with "first", "second" can explicitly or implicitly include at least one of the limited features. As the description of "a plurality of" appears, it generally means at least two, such as two, three, etc., unless otherwise specifically limited.

[0047] In the present application, unless otherwise specifically defined and limited, as the terms "mounting", "connecting", "connecting", "fixing" and the like appear, they should be understood in a broad sense. For example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected, it can be directly connected, or it can be indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0048] In the description of the present specification, if the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" and the like appear, it means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, different embodiments or examples described in the present specification and the features of different embodiments or examples can be combined and combined by those skilled in the art without contradiction.

[0049] It should be noted that, as shown in Figure 1 , the first direction in the embodiment of the present application refers to the spacing direction of the first support structure 120 and the second support structure 130, that is, the vertical direction of the direction along which the hot wire is alternately wound; the second direction in the embodiment of the present application refers to the direction in which the hot wire is alternately wound around the first fixed column 121 and the second fixed column 131, that is, the extension direction of the first hot wire array 111 and the second hot wire array 112, the second direction is perpendicular to the first direction; the third direction in the embodiment of the present application refers to the direction perpendicular to the plane formed by the first direction and the second direction.

[0050] Based on the foregoing, the general inventive concept of the embodiment of the present application is to provide a hot wire module 100, by designing the structure of the hot wire module 100, using a single hot wire in series stretching layout, and alternately winding along the second direction with both ends of the plurality of first fixed columns 121 of the first support structure 120 and the plurality of second fixed columns 131 of the second support structure 130 along the third direction to form the first hot wire array 111 and the second hot wire array 112, so that the hot wire module 100 greatly reduces the requirements for electrical contact and power supply; and in the working process, the hot wire has fewer electrical contact points, the substrate 20 is arranged between the first hot wire array 111 and the second hot wire array 112, both sides of the substrate 20 can be heated at the same time, and the reaction gas and the doping gas can be deposited on the two heating surfaces of the substrate 20. Compared with single-sided heating, it is easier to heat to the required working temperature, thereby reducing the target working temperature of the hot wire, so that the hot wire can also achieve sufficient heating of the substrate 20 at a lower temperature, thereby significantly improving the effective utilization rate of the hot wire and reducing the loss. At the same time, the structure of the hot wire module 100 of the embodiment of the present application is simple, the hot wire is arranged conveniently, and it is more conducive to maintenance and modular expansion, so that the diamond thin film growth efficiency and doping efficiency are improved, and the preparation cost is lower.

[0051] Based on the above general inventive concept, referring to Figures 1-8The embodiment of the present application first provides a hot wire module 100, which comprises a first hot wire array 111, a second hot wire array 112, a first support structure 120 and a second support structure 130; the first support structure 120 and the second support structure 130 are arranged at intervals along a first direction; the first support structure 120 comprises a plurality of first fixed columns 121, and the plurality of first fixed columns 121 are arranged at intervals along a second direction; the second support structure 130 comprises a plurality of second fixed columns 131, and the plurality of second fixed columns 131 are arranged at intervals along the second direction; the first hot wire array 111 is formed by a hot wire alternately winding the plurality of first fixed columns 121 and the plurality of second fixed columns 131 along the second direction at one end of the plurality of first fixed columns 121 and the plurality of second fixed columns 131 along a third direction; and the second hot wire array 112 is formed by a hot wire alternately winding the plurality of first fixed columns 121 and the plurality of second fixed columns 131 along the second direction at the other end of the plurality of first fixed columns 121 and the plurality of second fixed columns 131 along the third direction.

[0052] It should be understood that the first hot wire array 111 in the embodiment of the present application is formed by a single hot wire alternately winding one end of the plurality of first fixed columns 121 and the plurality of second fixed columns 131 along the second direction, for example, the first fixed column 121 arranged at the first position in the front can be wound first, then the second fixed column 131 arranged at the first position in the front is wound, and the first fixed column 121 arranged at the second position is wound, and so on, until the last first fixed column 121 and the last second fixed column 131 are wound; the second hot wire array 112 can also be formed by the single hot wire alternately winding the other end of the plurality of first fixed columns 121 and the plurality of second fixed columns 131 along the second direction, so that the hot wire module 100 forms two layers of hot wire heating arrays arranged at intervals along the third direction; and this kind of alternately winding mode ensures that the hot wire can be uniformly distributed between the first support structure 120 and the second support structure 130, and forms the regular first hot wire array 111 and the first hot wire array 111.

[0053] It can be understood that in the hot wire module 100 provided by the embodiment, the first hot wire array 111 and the second hot wire array 112 are formed by a single hot wire, compared with the traditional multiple hot wires contact type stretching parallel arrangement mode, in the embodiment, the hot wire module 100 is designed by alternately winding, the hot wire is directly and insulatively connected between the first fixed column 121 and the second fixed column 131, forming a simplified circuit structure, so as to reduce the complex contact points and connection points required by the traditional multiple parallel hot wires, thereby reducing the requirement for electrical contact. Since the hot wire is uniformly distributed in the form of double-layer array between the two support structures, the distribution of current in the hot wire is more uniform, avoiding the problem of uneven current distribution that may occur in the traditional hot wire parallel structure. This uniform current distribution reduces the specific requirements for the power current, and reduces the demand for large current power to compensate for the insufficient current in some areas.

[0054] Moreover, since the single hot wire is distributed in an array form, each hot wire can be fully utilized, avoiding the problem of low utilization rate of some hot wires caused by the large resistance of the connection point in the traditional parallel structure, that is, under the same power, the embodiment can obtain higher heating efficiency and more stable heating performance, so as to improve the effective utilization rate of the hot wire and reduce the hot wire loss during the work process.

[0055] In addition, the substrate 20 is arranged between the first hot wire array 111 and the second hot wire array 112, and the two sides of the substrate 20 along the third direction can be heated at the same time, and the hot wire current and temperature can be much lower than that in the case of single-side heating, thereby greatly prolonging the service life of the hot wire and reducing the hot wire loss; the reagent and the dopant can be supplied to the two heated surfaces of the substrate 20 through the first hot wire array 111 and the second hot wire array 112, and the deposition growth is carried out on the two heated surfaces respectively, thereby improving the diamond film growth efficiency and the doping efficiency, and significantly reducing the preparation cost.

[0056] It should be noted that, compared with the traditional design, the hot wire module 100 in the embodiment has a simpler structure and is more convenient to expand. Specifically, when expanding, only the number of the first fixing column 121 and the second fixing column 131 and the distance between the adjacent two first fixing columns 121 and the two second fixing columns 131 need to be adjusted, so that the hot wire module 100 can be expanded along the second direction, and the first hot wire array 111 and the second hot wire array 112 can have a larger or smaller coverage area to adapt to different diamond film preparation requirements. Moreover, by arranging the plurality of hot wire modules 100 in the embodiment along the third direction and assembling them in the chemical deposition equipment, the hot wire module 100 can be expanded along the third direction, so that the plurality of substrates 20 in the chemical deposition equipment can simultaneously grow diamond films, and each substrate 20 has two surfaces for diamond film growth, thereby greatly improving the diamond film growth efficiency and the doping efficiency.

[0057] The hot wire module 100 provided in the embodiment is convenient to replace the hot wire after completing a round of diamond film growth, without the need for too many complicated clamps or connection point fixation, and only needs to directly take off or wind the hot wire from the first fixing column 121 and the second fixing column 131, so that the maintenance convenience is high, and the continuity and repeatability of the film growth are effectively improved.

[0058] In some embodiments, as shown in Figure 4 The first hot wire array 111 and the second hot wire array 112 are respectively composed of a single hot wire, that is, the single hot wire module 100 has two hot wires, and the two ends of the two hot wires can be respectively connected with the electrode assembly 200 when power is supplied; or, as shown in Figure 1As shown, the first hot wire array 111 and the second hot wire array 112 are formed by the same hot wire, that is, a single hot wire module 100 has a ring-shaped hot wire. The two ends of the ring-shaped hot wire are wound around multiple first fixing posts 121 and second fixing posts 131 to form the first hot wire array 111 and the second hot wire array 112, respectively. When powered, the two ends of the ring-shaped hot wire along the second direction are connected to the electrode assembly 200, respectively.

[0059] In some embodiments, to improve the uniformity of the distribution of hot filament segments in the first hot filament array 111 and the second hot filament array 112, such as... Figure 4 As shown, at least a portion of each first fixing post 121 is located between two adjacent second fixing posts 131 in the second direction; for example, each first fixing post 121 may be located entirely between adjacent second fixing posts 131 in the second direction, and the length of each first fixing post 121 in the second direction is exactly equal to the distance between adjacent second fixing posts 131, forming a first hot wire array 111 and a second hot wire array 112 that are both regular rectangles; or each first fixing post 121 may be partially located between adjacent second fixing posts 131 in the second direction, forming a first hot wire array 111 and a second hot wire array 112 that are both inclined rectangles. In this embodiment, the arrangement of the hot wires in the first hot wire array 111 and the second hot wire array 112 is mainly affected by the arrangement of the first fixed post 121 and the second fixed post 131. The layout of the first fixed post 121 and the second fixed post 131 provided in this embodiment ensures that when the hot wires are alternately wound around the first fixed post 121 and the second fixed post 131, they can be more evenly distributed throughout the heating area and cover a wider area, avoiding uneven local temperature and allowing heat to be transferred to the target area more effectively.

[0060] In some embodiments of this application, the ratio of the spacing between two adjacent first fixing posts 121 to the diameter of the first fixing post 121 is 0.5 to 3, and the ratio of the spacing between two adjacent second fixing posts 131 to the diameter of the second fixing post 131 is 0.5 to 3. Within this range of diameter ratios, the first hot wire array 111 and the second hot wire array 112 can be more evenly distributed throughout the heating area and cover a wider area.

[0061] In the preferred embodiments of the present application, the ratio of the distance between two adjacent first fixing columns 121 to the diameter of the first fixing column 121 is 1, and the ratio of the distance between two adjacent second fixing columns 131 to the diameter of the second fixing column 131 is 1, i.e., the distance between two adjacent first fixing columns 121 is equal to the diameter of the first fixing column 121, the distance between two adjacent second fixing columns 131 is equal to the diameter of the second fixing column 131, and the diameter of the first fixing column 121 is the same as that of the second fixing column 131, so that the single hot wire is alternately wound on the first hot wire array 111 and the second hot wire array 112 formed by the first fixing columns 121 and the second fixing columns 131, and the plurality of hot wire segments arranged in the second direction in the first hot wire array 111 and the second hot wire array 112 present a periodic arrangement form with the same interval, so as to ensure that the heat can be uniformly distributed in the entire heating area. Since the distance between the hot wire segments is fixed, the temperature of the heating area can be accurately controlled by adjusting the power or current of the hot wire, so that the temperature control of the heating area is easier.

[0062] In some embodiments of the present application, the interval of the first hot wire array 111 and the second hot wire array 112 in the third direction is 12-20 mm, so as to give the substrate 20 sufficient arrangement space and make the substrate 20 can fully receive the heat provided by the first hot wire array 111 and the second hot wire array 112, so as to reduce the heat loss efficiency.

[0063] In order to further improve the stability of the first hot wire array 111 and the second hot wire array 112, in some embodiments of the present application, as shown in Figure 1 and Figure 4 The first support structure 120 further comprises a first support plate 122, and each first fixing column 121 penetrates the first support plate 122 in the third direction and protrudes from the first support plate 122; the second support structure 130 further comprises a second support plate 132, and each second fixing column 131 penetrates the second support plate 132 in the third direction and protrudes from the second support plate 132; the first support plate 122 and the second support plate 132 are located between the first hot wire array 111 and the second hot wire array 112 in the third direction.

[0064] In the embodiments of the present application, the first support plate 122 and the second support plate 132 are arranged in a plane formed by the first direction and the second direction, and the first support plate 122 and the second support plate 132 are both cuboid plates extending along the second direction. The first support plate 122 and the second support plate 132 are both provided with through holes facing the third direction, and each of the first fixed column 121 and the second fixed column 131 is arranged and fixed between the corresponding through holes to protrude from both sides of the first support plate 122 or the second support plate 132 in the third direction, so that the first heating wire array 111 and the second heating wire array 112 are distributed on both sides of the first support plate 122 and the second support plate 132 in the third direction. Due to the support of the first support plate 122 and the second support plate 132 on the first fixed column 121 and the second fixed column 131, the stability and positioning accuracy of the first fixed column 121 and the second fixed column 131 are ensured, and the heat transfer and distribution of the heating wire in the third direction are facilitated, and the stability of the first heating wire array 111 and the second heating wire array 112 is significantly improved.

[0065] It should be noted that in a long-time operation or high-temperature environment, the electrical contact between the heating wire and other components can cause damage to the heating wire or reduce its performance. In the embodiments of the present application, the heating wire is directly or indirectly insulated from the remaining components in addition to being electrically connected to the electrode assembly 200. The insulation design can avoid such electrical contact, thereby prolonging the service life of the heating wire and improving the stability of the equipment. On the other hand, the insulation design can avoid the current leakage caused by the contact or short circuit between the heating wire and other components, thereby reducing the energy consumption of the equipment and improving the energy utilization efficiency.

[0066] For example, in the case where the first fixed column 121 and the second fixed column 131 are made of high-melting-point metal conductive materials such as molybdenum and tantalum, the first support plate 122 and the second support plate 132 should correspondingly be made of high-melting-point insulating materials such as aluminum nitride, aluminum oxide, or boron nitride in insulating ceramics. Alternatively, in the case where the first fixed column 121 and the second fixed column 131 are made of high-melting-point insulating materials, the first support plate 122 and the second support plate 132 can be made of high-melting-point metal materials or high-melting-point insulating materials. In general, under the condition of meeting the insulation requirements of the heating wire, flexible combinations can be made according to the application scenarios and cost considerations, so that the heating wire module 100 is more expandable.

[0067] The heating wire in the embodiments of the present application preferably adopts a tantalum wire, because the metal tantalum has a very high melting point, which can reach 2996℃, so that the tantalum wire can maintain stable performance in a high-temperature environment and is not easy to melt or deform. Of course, in some embodiments, the heating wire can also be made of tungsten wire and other materials, which are all applicable to the heating wire module 100 provided in the embodiments of the present application.

[0068] In practical applications, the first hot wire array 111 or the second hot wire array 112 formed by a single hot wire may experience thermal expansion due to heating, causing the first hot wire array 111 or the second hot wire array 112 to loosen, affecting the effective utilization rate of the hot wire and the stability of film growth. Therefore, such as... Figure 4 As shown, in some embodiments of this application, the hot wire module 100 further includes a first adjustment component 140, which is connected to the first support structure 120 and is used to drive the first support structure 120 to move in a first direction to adjust the tension of the first hot wire array 111 and the second hot wire array 112; or the hot wire module 100 further includes a second adjustment component 150, which is connected to the second support structure 130 and is used to drive the second support structure 130 to move in a first direction to adjust the tension of the first hot wire array 111 and the second hot wire array 112.

[0069] It should be understood that the first adjustment component 140 and the second adjustment component 150 can be selected according to different application scenarios. The configuration of either the first adjustment component 140 or the second adjustment component 150 can realize the adjustment of the tension of the first hot wire array 111 and the second hot wire array 112 under high temperature environment, so that the first hot wire array 111 and the second hot wire array 112 maintain a taut state. Taking the first adjustment component 140 as an example, the first adjustment component 140 can be connected to the first support plate 122 to drive the first support plate 122 to move in the first direction, thereby adjusting the tension of the first hot wire array 111 and the second hot wire array 112, so that the first hot wire array 111 and the second hot wire array 112 maintain a taut and stretched state under high temperature heating, so as to improve the effective utilization rate of hot wire and the stability of film growth.

[0070] In a preferred embodiment of this application, the hot wire module 100 is designed with a first adjustment component 140 and a second adjustment component 150. The first adjustment component 140 is connected to the first support structure 120 and is used to drive the first support structure 120 to move in a first direction; the second adjustment component 150 is connected to the second support structure 130 and is used to drive the second support structure 130 to move in the first direction. The simultaneous action of the first adjustment component 140 and the second adjustment component 150 can more accurately and effectively maintain the stability and tension of the double-layer hot wire array, compensate for the thermal expansion of the hot wire during the high-temperature heating process, keep the first hot wire array 111 and the second hot wire array 112 in a taut state, and avoid them from affecting the performance and the stability of film growth due to relaxation.

[0071] In some embodiments of this application, such as Figure 4As shown, the first adjusting assembly 140 comprises a first mounting bracket 141 and at least one first elastic member 142, the first elastic member 142 being located between the first mounting bracket 141 and the first support structure 120 in the first direction and being connected to the first mounting bracket 141 and the first support structure 120; and / or the second adjusting assembly 150 comprises a second mounting bracket 151 and at least one second elastic member 152, the second elastic member 152 being located between the second mounting bracket 151 and the second support structure 130 in the first direction and being connected to the second mounting bracket 151 and the second support structure 130.

[0072] For example, the first elastic member 142 can be a tension spring, the first mounting bracket 141 can be a plate-shaped member extending in the second direction, and the first elastic member 142 is located between the first mounting bracket 141 and the first support plate 122 in the first direction and is connected to the first mounting bracket 141 and the first support plate 122; thus, when the heating wire is hot-expanded due to high temperature, the first support plate 122 is subjected to the contraction deformation of the first elastic member 142, and an action force is generated on the heating wire wound on the first fixed column 121 in the direction of the first mounting bracket 141, so as to maintain the tension of the heating wire; when the temperature decreases, the heating wire contracts, and the first elastic member 142 releases a part of the force correspondingly, so that the first support plate 122 moves away from the first mounting bracket 141, so as to maintain the appropriate tension of the heating wire module 100, and the heating wire is always in a tight state. Similarly, the second adjusting assembly 150 and the first adjusting assembly 140 have the same working principle, and the tension and release of the second elastic member 152 are used to automatically adjust the tension of the heating wire array.

[0073] It should be noted that the number and specific position of the first adjusting assembly 140 and / or the second adjusting assembly can be selected according to different application scenarios. In order to ensure the adjusting effect, the first elastic member 142 and the second elastic member 152 should be selected according to the actual working condition, for example, when the first elastic member 142 and the second elastic member 152 are tension springs, the diameter and number of the tension springs can be selected according to the diameter of the heating wire, as well as the tension at the working temperature and the highest working temperature, so as to ensure that the first heating wire array 111 and the second heating wire array 112 are kept in a straight state under sufficient elastic force in a high temperature state, and at the same time, it is also ensured that the heating wire is not stretched too much to cause the risk of breaking, so as to avoid affecting the service life.

[0074] In some embodiments, in order to avoid the first heating wire array 111 and the second heating wire array 112 from being deviated in the process of the first elastic member 142 or the second elastic member 152 generating the action force, affecting the film growth quality, such as Figure 4As shown, the hot-wire module 100 further comprises a guide structure 160, which is slidingly connected to the first support structure 120 and the second support structure 130, so that the first support structure 120 and the second support structure 130 can slide relative to the guide structure 160 in the first direction, improving the performance and reliability of the first hot-wire array 111 and the second hot-wire array 112 under high-temperature working conditions.

[0075] In one specific embodiment, the guide structure 160 is provided with a first limiting sliding groove and a second limiting sliding groove, which are arranged in the first direction and extend in the first direction. For example, the first limiting sliding groove is a long slot extending in the first direction, which is matched in shape and size with the bottom of the first support plate 122 to ensure that the first support plate 122 can slide smoothly therein. The second limiting sliding groove also extends in the first direction and is arranged in the first direction. The second limiting sliding groove is matched in shape and size with the bottom of the second support plate 132 to ensure that the second support plate 132 can also slide smoothly therein. The first support plate 122 is located in the first limiting sliding groove, and the second support plate 132 is located in the second limiting sliding groove. Due to the limitation of the first limiting sliding groove, the first support plate 122 will not deviate in other directions during sliding. Similarly, due to the limitation of the second limiting sliding groove, the second support plate 132 will not deviate in other directions during sliding.

[0076] Under high-temperature working conditions, when it is necessary to adjust the tension of the first hot-wire array 111 and the second hot-wire array 112, the first elastic member 142 and the second elastic member 152 act on the first support plate 122 and the second support plate 132 respectively, pushing them to slide in the first direction in the respective first limiting sliding groove and second limiting sliding groove. Due to the limiting action of the first limiting sliding groove and the second limiting sliding groove, the first support plate 122 and the second support plate 132 can only move in the first direction, thereby avoiding the deviation or skew of the first hot-wire array 111 and the second hot-wire array 112 caused by the multi-directional force during adjustment. Thus, the design of the embodiment not only improves the stability of the first hot-wire array 111 and the second hot-wire array 112, but also ensures the accuracy and reliability of the adjustment. At the same time, due to the simple design of the guide structure 160, the production cost and maintenance cost are also reduced.

[0077] Continuing to refer to Figures 1-8Another embodiment of this application provides a chemical vapor deposition apparatus 10, including at least two first delivery mechanisms 300, at least two electrode assemblies 200, and at least one hot filament module 100 as described above; the two first delivery mechanisms 300 are arranged at intervals along a third direction for delivering reactants and / or dopants; the first hot filament array 111 and the second hot filament array 112 of each hot filament module 100 are respectively connected to the two electrode assemblies 200 at both ends in a second direction, and a substrate 20 is arranged between the first hot filament array 111 and the second hot filament array 112; each hot filament module 100 is arranged between the two first delivery mechanisms 300 so that the substrate 20 receives the reactants and / or dopants delivered by the first delivery mechanisms 300.

[0078] In the chemical vapor deposition apparatus 10 provided in this application embodiment, the hot filament module 100 can be one or multiple modules arranged along at least one direction. Taking the arrangement of a single hot filament module 100 as an example, in the chemical vapor deposition apparatus 10 provided in this application embodiment, such as... Figure 3 As shown, two first conveying mechanisms 300 are arranged at intervals along a third direction, and a hot filament module 100 is arranged between the two first conveying mechanisms 300. The two ends of the first hot filament array 111 and the second hot filament array 112 are respectively connected to two electrode assemblies 200. The reactant and / or dopant conveyed by the two first conveying mechanisms 300 are conveyed to both sides of the substrate 20 arranged in the hot filament module 100 after passing through the first hot filament array 111 and the second hot filament array 112, so that diamond thin film growth can be performed simultaneously on both sides of the substrate 20.

[0079] It should be noted that the electrode assembly 200 in this embodiment is mainly used for power supply, such as Figure 2 As shown, it can be arranged at both ends of the hot wire module 100 along the first direction, or as... Figure 4 As shown, the first support plate 122 or the second support bracket extends along both ends of the first direction, thereby heating the first hot wire array 111 and the second hot wire array 112 connected to them.

[0080] It should be understood that the first conveying mechanism 300 in the embodiments of this application is mainly used for conveying reactants, and can also be used to supply dopants when it is necessary to prepare a doped diamond film.

[0081] In some embodiments, the substrate 20 may be a plate-shaped substrate. The substrate 20 may be fixed between the first hot wire array 111 and the second hot wire array 112 by high-temperature screws. The support for the high-temperature screw connection may be a shell or frame structure. The hot wire module 100 may be fixed as a whole in the shell or frame structure by the first mounting bracket 141.

[0082] Furthermore, such as Figure 3As shown, the first conveying mechanism 300 can be a shower plate, and a plurality of spray holes are arranged on the shower plate. The diameter of the spray holes can be designed to be in the range of 0.5-1 mm, and the spacing between the spray holes can be designed to be in the range of 5-10 mm, so as to facilitate the uniform distribution of the reaction agent and the dopant on the surface of the substrate 20.

[0083] To achieve high concentration distribution of the dopant gas on the growth surface of the substrate 20 and high-efficiency doping of the diamond film, in some preferred embodiments of the present application, as shown in Figure 6 and Figure 7 As shown, the chemical vapor deposition device 10 further comprises at least one second conveying mechanism 400; the second conveying mechanism 400 is arranged at at least one end of the substrate 20 opposite in the first direction or the second direction, and is used to convey the dopant to at least two sides of the substrate 20.

[0084] For the arrangement mode of the single heating module, the second conveying mechanism 400 can be one or two. When the second conveying mechanism 400 is one, the second conveying mechanism 400 is arranged at any one end of the substrate 20 opposite in the first direction or the second direction. When the double-layer gas flow technology is used, the second conveying mechanism 400 is preferably designed to be two, and the two second conveying mechanisms 400 are arranged at two ends of the substrate 20 opposite in the first direction or the second direction, respectively. The second conveying mechanism 400 is mainly used to convey the dopant. In the case where the second conveying mechanism 400 is designed, the first conveying mechanism 300 is only used to convey the reaction agent, so that the dopant can be independently conveyed in parallel from both sides of the growth surface of the substrate 20, and the dopant can be uniformly mixed with the high-temperature reaction agent passing through the high-temperature plane provided by the first heating wire array 111 and the second heating wire array 112 on the growth surface. At this time, the reaction agent simultaneously plays a role of pressing the dopant, so that the dopant is more concentrated on the growth surface to form a high-concentration distribution of the doped group on the growth surface of the substrate 20, and high-concentration and high-efficiency doping of the diamond film on the surface of the substrate 20 is achieved.

[0085] In one specific embodiment, as shown in Figure 7 The second conveying mechanism 400 comprises two gas guide pipes 410; the two gas guide pipes 410 are arranged at intervals in the third direction, and the substrate 20 is arranged between the two gas guide pipes 410 in the third direction; and a gas guide hole 411 is arranged at intervals along the length direction of each gas guide pipe 410, so as to simultaneously convey the dopant to both sides of the substrate 20 and ensure the uniform distribution of the dopant on both sides of the substrate 20.

[0086] It is understood that when there are multiple hot wire modules 100, the above-mentioned components can be arranged and combined to achieve simultaneous double-sided growth control of multiple substrates 20. For example, a single hot wire module 100 can be arranged parallel to the horizontal plane, and multiple hot wire modules 100 can be arranged at intervals in the vertical direction when expanding, so that each substrate 20, each first hot wire array 111 and each second hot wire array 112 are parallel to the horizontal plane. Correspondingly, a single hot wire module 100 can also be arranged vertically along a vertical plane perpendicular to the horizontal plane, and multiple hot wire modules 100 can be arranged at intervals in the horizontal direction when expanding, so that each substrate 20, each first hot wire array 111 and each second hot wire array 112 are perpendicular to the horizontal plane.

[0087] In some embodiments, the substrate 20 only needs a single growth surface for diamond film growth. In this case, two substrates 20 can be bonded together and simultaneously arranged in a single hot wire module 100, so that the resulting diamond film is only loaded on a single surface of the substrate 20.

[0088] In some implementations, such as Figures 5-8 As shown, the chemical vapor deposition apparatus 10 also includes a reaction chamber 500, a growth box 600, a third conveying mechanism (not shown), and an exhaust mechanism 700; the growth box 600 is disposed within the reaction chamber 500, and the growth box 600 contains a substrate 20, a plurality of first conveying mechanisms 300, a plurality of second conveying mechanisms 400, a plurality of electrode assemblies 200, and a plurality of hot filament modules 100; the plurality of hot filament modules 100 are arranged along at least one direction (e.g., Figure 5 As shown, the three conveying mechanisms are arranged at intervals in the growth box 600 along the third direction; the exhaust mechanism 700 and the third conveying mechanism are located outside the reaction chamber 500 and are connected to the reaction chamber 500. The third conveying mechanism is connected to each first conveying mechanism 300 and each second conveying mechanism 400 through the reaction chamber 500.

[0089] In the embodiment, the chemical vapor deposition device 10 further comprises a reaction chamber 500, a growth box 600, a third conveying mechanism and an exhaust mechanism 700. The reaction chamber 500 is mainly used for arranging the growth box 600 and providing a vacuum environment required for diamond growth. The growth box 600 is arranged in the reaction chamber 500, and the substrate 20, the plurality of first conveying mechanisms 300, the plurality of second conveying mechanisms 400, the plurality of electrode assemblies 200 and the plurality of hot-wire module 100 are arranged in the growth box 600. The arrangement mode of the substrate 20, the plurality of first conveying mechanisms 300, the plurality of second conveying mechanisms 400, the plurality of electrode assemblies 200 and the plurality of hot-wire module 100 can refer to the above-mentioned embodiments, and will not be described here. The third conveying mechanism is arranged outside the reaction chamber 500 and communicates with each first conveying mechanism 300 and each second conveying mechanism 400 in the growth box 600 through the reaction chamber 500, and is used for supplying reaction reagents and dopants. The exhaust mechanism 700 is arranged outside the reaction chamber 500 and communicates with the reaction chamber 500. The exhaust mechanism 700 is connected with a mechanical exhaust pump to exhaust the reaction tail gas in the reaction chamber 500 when needed. The plurality of hot-wire module 100 can be arranged in the growth box 600 in a first direction, a second direction or a third direction.

[0090] In some embodiments, in order to control the temperature of the substrate 20, a water-cooling assembly is arranged in the growth box 600 and arranged on at least one side of the substrate 20 to cooperate with the hot-wire module 100 to control the temperature of the substrate 20 to an appropriate level.

[0091] In some embodiments, in order to improve the quality of diamond film growth and doping, the growth box 600 is provided with an exhaust groove arranged in the circumferential direction of the substrate 20 and communicating with the exhaust mechanism 700, so that the reaction tail gas in the growth box 600 can be exhausted in time after the diamond film growth and doping is completed, so that the quality of diamond film growth and doping is effectively improved.

[0092] Exemplarily, the diamond film coating is prepared by using the chemical vapor deposition equipment 10 provided by the embodiment of the present application, and the specific process is as follows: the growth box 600 is loaded into the reaction chamber 500, the first conveying mechanism 300 in the growth box 600 is connected with the third conveying mechanism passing through the reaction chamber 500, the electrode assembly 200 in the growth box 600 is further connected with the power electrode of the reaction chamber 500, then the reaction chamber 500 is vacuumized to a background vacuum of 10-4Torr; after the reaction chamber 500 has the vacuum degree, the first hot wire array 111 and the second hot wire array 112 in the hot wire module 100 are heated and carbonized to reduce hot wire contamination and improve hot wire life; after being heated to a preset carbonization temperature, the heating is stopped, then cooling is performed and the reaction chamber 500 is discharged by the exhaust mechanism 700; the substrate 20 is surface pretreated, then the substrate 20 is inserted into the growth box 600 to realize combined connection; the reaction chamber 500 is vacuumized to a background vacuum of 10-4Torr again; the first hot wire array 111 and the second hot wire array 112 are heated to nearly 3000 degrees, under the temperature condition, the reaction gas is introduced, the total gas flow of the reaction gas is 200sccm-1000sccm, wherein the methane gas is 10-50sccm, the rest is hydrogen, the gas flow uniformly enters from the first conveying mechanism 300 parallel to the hot wire, passes through the first hot wire array 111 and the second hot wire array 112 and flows to the surface of the substrate 20, and diamond film coating growth is performed;

[0093] During the growth of the diamond film coating, the surface temperature of the hot wire can be precisely controlled by applying a direct current to control the current of the hot wire, so as to achieve the purpose of heating the reaction gas flowing through and the surface of the substrate 20. Among them, the temperature of the substrate 20 is balanced by the heating of the first hot wire array 111 and the second hot wire array 112 and the heat dissipation of the water-cooled assembly around the substrate 20, so as to effectively control the temperature, and the controllable temperature range can be 700-1000 degrees. After a round of growth is completed, the reaction tail gas is removed from the growth area through the exhaust slots around the substrate 20, and the reaction tail gas is quickly pumped out of the reaction chamber 500 through the mechanical pump connected with the exhaust mechanism 700, and the reaction tail gas is effectively discharged by using appropriate tail gas treatment technology. The growth process of the diamond film coating is usually 4-10 hours, and the final coating thickness is about 5-10 microns. After the growth of the diamond film coating is completed, the gas source is turned off, and the heating is stopped after 5 minutes; the mechanical pump is turned off after the pumping state is maintained for 30 minutes; the mechanical pump is turned off, and the reaction chamber 500 is vented, and the growth box 600 is taken out, and then the substrate 20 is taken out from the growth box 600, and a round of diamond film coating growth is completed. After the growth of the diamond film coating is completed, the state of the hot wire is checked, and if the hot wire remains intact, the next round of growth is prepared, that is, the above growth process is repeated to complete the next round of diamond film coating growth; if the hot wire is damaged, the hot wire is replaced, and the above growth process is repeated to complete the next round of diamond film coating growth.

[0094] Exemplarily, the boron-doped diamond BDD film is prepared by using the chemical vapor deposition equipment 10 provided in the embodiment of the present application. Each first conveying mechanism 300 is a spray plate, and the distance between the first hot wire array 111 and the second hot wire array 112 and the spray plate is 50-80 mm. The diameter of the spray hole is 0.5-1 mm, and the distance between the spray holes is 5-10 mm. The total gas flow of the reaction gas is 200 sccm, of which the flow of methane gas is 10 sccm, the flow of dilute borane is 10 sccm, and the concentration is 1%. The specific process is as follows:

[0095] The growth box 600 is loaded into the reaction chamber 500, and the first conveying mechanism 300 in the growth box 600 is connected with the third conveying mechanism passing through the reaction chamber 500, and the electrode assembly 200 in the growth box 600 is further connected with the power electrode of the reaction chamber 500, then the reaction chamber 500 is vacuumized to a background vacuum of 10-4 Torr; after the reaction chamber 500 has the vacuum degree, the first hot wire array 111 and the second hot wire array 112 in the hot wire module 100 are heated and carbonized to reduce hot wire contamination and improve hot wire life; after being heated to a preset carbonization temperature, the heating is stopped, then the reaction chamber 500 is vented by the exhaust mechanism 700 after cooling; the substrate 20 is surface pretreated, then the substrate 20 is inserted into the growth box 600 to realize the combined connection; the reaction chamber 500 is vacuumized to a background vacuum of 10-4 Torr again; the first hot wire array 111 and the second hot wire array 112 are heated to nearly 3000 degrees, and the reaction gas is introduced at this temperature, the total reaction gas flow is 200 sccm-1000 sccm, wherein the methane gas is 10-50 sccm, the dilute borane flow is 10 sccm, and the concentration is 1%, all the gas flows uniformly enter from the first conveying mechanism 300 parallel to the hot wire, pass through the first hot wire array 111 and the second hot wire array 112, and flow to the surface of the substrate 20 to grow boron-doped diamond BDD film;

[0096] During the growth of the boron-doped diamond BDD film, the hot wire surface temperature can be precisely controlled by controlling the hot wire current through an external direct current voltage, so as to heat the reaction gas flowing through and the surface of the substrate 20. The temperature of the substrate 20 is balanced by the heating of the first hot wire array 111 and the second hot wire array 112 and the heat dissipation of the water-cooled assembly around the substrate 20 to effectively control the temperature, and the controllable temperature range can be 700 degrees-1000 degrees. After a round of growth is completed, the reaction tail gas is removed from the growth area through the exhaust slots around the substrate 20, and the reaction tail gas is quickly pumped out of the reaction chamber 500 by the mechanical pump connected with the exhaust mechanism 700, and effectively discharged by using appropriate tail gas treatment technology. The boron-doped diamond BDD film growth process usually lasts for 4-10 hours, and the final coating thickness is about 5 to 10 microns. After the boron-doped diamond BDD film growth is completed, the gas source is turned off, and the heating is stopped after 5 minutes; the mechanical pump is turned off after the exhaust state is maintained for 30 minutes; the reaction chamber 500 is vented after the mechanical pump is turned off, and the growth box 600 is taken out, then the substrate 20 is taken out of the growth box 600, and a round of boron-doped diamond BDD film growth is completed. After the boron-doped diamond BDD film growth is completed, the hot wire state is checked, if the hot wire remains intact, the next round of growth is prepared, that is, the above growth process is repeated to complete the next round of boron-doped diamond BDD film growth; if the hot wire is damaged, the next round of boron-doped diamond BDD film growth is completed after the hot wire is replaced and the above growth process is repeated.

[0097] Exemplarily, the high-efficiency preparation and growth of the diamond BDD electrode prepared by the chemical vapor deposition device 10 provided by the embodiment of the present application is as follows: each first conveying mechanism 300 is a spray plate, the distance between the first and second hot wire arrays 111 and 112 and the spray plate is 50-80 mm, the diameter of the spray hole is 0.5-1 mm, the distance between the spray holes is 5-10 mm, the total flow of the reaction gas is 200 sccm, the flow of the methane gas is 10 sccm, the flow of the dilute borane is 10 sccm, and the concentration is 1%.

[0098] The growth box 600 is loaded into the reaction chamber 500, the first and second conveying mechanisms 300 and 400 in the growth box 600 are connected with the third conveying mechanism passing through the reaction chamber 500, the electrode assembly 200 in the growth box 600 is further connected with the power electrode of the reaction chamber 500, then the reaction chamber 500 is vacuumized to a base vacuum of 10-4 Torr, after the reaction chamber 500 has the vacuum degree, the first and second hot wire arrays 111 and 112 in the hot wire module 100 are heated and carbonized to reduce hot wire contamination and improve hot wire life; after being heated to a preset carbonization temperature, the heating is stopped, then the reaction chamber 500 is cooled and discharged by the exhaust mechanism 700; the substrate 20 is surface pretreated, then the substrate 20 is inserted into the growth box 600 to realize the combined connection; the reaction chamber 500 is vacuumized to a base vacuum of 10-4 Torr again; the first and second hot wire arrays 111 and 112 are heated to nearly 3000 degrees, under the temperature condition, the reaction gas is introduced into the reaction chamber 500 through the first conveying mechanism 300, the total flow of the reaction gas is 200-1000 sccm, the flow of the methane gas is 10-50 sccm, the rest of the reaction gas is hydrogen, and the dilute borane is introduced into the reaction chamber 500 through the second conveying mechanism 400, the flow of the dilute borane is 10 sccm, and the concentration is 1%, the flow of the reaction gas is uniformly introduced into the reaction chamber 500 through the first conveying mechanism 300 parallel to the hot wire, passes through the first and second hot wire arrays 111 and 112 and flows to the surface of the substrate 20, and the doping gas is introduced into the reaction chamber 500 through the gas pipeline 410 of the second conveying mechanism 400 and flows to the surface of the substrate 20 to grow the diamond BDD electrode.

[0099] During the growth of the diamond BDD electrode, the surface temperature of the hot wire can be precisely controlled by applying a direct current voltage to control the current of the hot wire, so as to heat the reaction gas flowing through and the substrate 20. Among them, the temperature of the substrate 20 is balanced by the heating of the first hot wire array 111 and the second hot wire array 112 and the heat dissipation of the water cooling assembly around the substrate 20, so as to effectively control the temperature, and the controllable temperature range can be 700-1000 degrees. After a round of growth is completed, the reaction tail gas is removed from the growth area through the exhaust slots around the substrate 20, and the reaction tail gas is quickly pumped out of the reaction chamber 500 through the mechanical pump connected with the exhaust mechanism 700, and the reaction tail gas is effectively discharged by using appropriate tail gas treatment technology. The growth process of the diamond BDD electrode usually takes 4-10 hours, and the final coating thickness is about 5-10 microns. After the growth of the diamond BDD electrode is completed, the gas source is turned off, and the heating is stopped after 5 minutes; the mechanical pump is turned off after the pumping state is maintained for 30 minutes; the mechanical pump is turned off, and the reaction chamber 500 is vented, and the growth box 600 is taken out, and then the substrate 20 is taken out from the growth box 600, and a round of diamond BDD electrode growth is completed. After the growth of the diamond BDD electrode is completed, the state of the hot wire is checked, and if the hot wire remains intact, the next round of growth is prepared, that is, the above growth process is repeated to complete the next round of diamond BDD electrode; if the hot wire is damaged, the next round of diamond BDD electrode is completed after the hot wire is replaced.

[0100] In summary, through the design of the hot wire module 100 and the chemical vapor deposition equipment 10, the substrate 20 can be heated on both sides during the growth of the diamond film, and the two sides of the substrate 20 can simultaneously grow the diamond film, so that the effective utilization rate of the hot wire and the diamond film growth efficiency are effectively improved; and the design of the hot wire module 100 greatly reduces the demand for electrical contact points and large current power supply, simplifies the layout form of the hot wire, further improves the effective utilization rate of the hot wire, and has lower loss; and the single hot wire is arranged conveniently, which is easy to maintain. The hot wire module 100 applied to the chemical vapor deposition equipment 10 is more easily realized modular expansion, thereby significantly reducing the preparation cost of the diamond film.

[0101] Further, a double-layer gas flow technology is adopted, that is, the dopant is independently and uniformly introduced to the surface of the substrate 20 from the second conveying mechanism 400 near the substrate 20, and the reactant is uniformly introduced to the surface of the substrate 20 from the first conveying mechanism 300, so as to realize efficient doping of the diamond film, effectively reduce the concentration requirement of the dopant for the doped diamond, realize efficient utilization of the dopant, and greatly improve the gas safety in the preparation of the doped diamond film by HFCVD, effectively reduce the cost of environmental protection and safety, and promote the industrial application of the diamond film.

[0102] Although the embodiments of the present application have been shown and described above, it is understood that the above-described embodiments are exemplary and are not to be construed as limiting the present application, and that changes, modifications, substitutions and variations can be made by those skilled in the art without departing from the scope of the present application.

Claims

1. A hot wire module (100), characterized in that, It includes a first hot wire array (111), a second hot wire array (112), a first support structure (120), and a second support structure (130). The first support structure (120) and the second support structure (130) are spaced apart along a first direction; The first support structure (120) includes a plurality of first fixed columns (121), which are spaced apart along a second direction; the second support structure (130) includes a plurality of second fixed columns (131), which are spaced apart along the second direction. The first hot wire array (111) is formed by sequentially and alternately winding a plurality of first fixing posts (121) and a plurality of second fixing posts (131) along the second direction at one end along the third direction. The second hot wire array (112) is formed by sequentially and alternately winding a plurality of first fixing posts (121) and a plurality of second fixing posts (131) along the second direction at the other end along the third direction. The hot wire is used only at both ends along the second direction for electrical connection with the electrode assembly (200), and the remaining part is insulated from the first fixing posts (121) and the second fixing posts (131).

2. The hot wire module (100) according to claim 1, characterized in that, The first hot wire array (111) and the second hot wire array (112) are each composed of a single hot wire; or The first hot wire array (111) and the second hot wire array (112) are formed from the same hot wire.

3. The hot wire module (100) according to claim 2, characterized in that, At least a portion of each of the first fixing posts (121) is located between two adjacent second fixing posts (131) in the second direction; and / or The ratio of the distance between two adjacent first fixing posts (121) to the diameter of the first fixing post (121) is 0.5 to 3; and / or The ratio of the distance between two adjacent second fixing posts (131) to the diameter of the second fixing post (131) is 0.5 to 3; and / or The first hot wire array (111) and the second hot wire array (112) are spaced 12~20mm apart along the third direction.

4. The hot wire module (100) according to claim 3, characterized in that, The first support structure (120) further includes a first support plate (122), and each of the first fixed columns (121) is inserted through and protrudes from the first support plate (122) in a third direction. The second support structure (130) also includes a second support plate (132), and each of the second fixed columns (131) is inserted through and protrudes from the second support plate (132) in a third direction. The first support plate (122) and the second support plate (132) are located between the first hot wire array (111) and the second hot wire array (112) along a third direction.

5. The hot wire module (100) according to any one of claims 1-4, characterized in that, The hot wire module (100) further includes a first adjustment component (140), which is connected to the first support structure (120) and is used to drive the first support structure (120) to move in the first direction to adjust the tension of the first hot wire array (111) and the second hot wire array (112); and / or The hot wire module (100) further includes a second adjustment component (150), which is connected to the second support structure (130) and is used to drive the second support structure (130) to move in the first direction to adjust the tension of the first hot wire array (111) and the second hot wire array (112).

6. The hot wire module (100) according to claim 5, characterized in that, The first adjustment assembly (140) includes a first mounting bracket (141) and at least one first elastic member (142), the first elastic member (142) being located between the first mounting bracket (141) and the first support structure (120) in the first direction and connected to the first mounting bracket (141) and the first support structure (120); and / or The second adjustment assembly (150) includes a second mounting bracket (151) and at least one second elastic member (152), the second elastic member (152) being located between the second mounting bracket (151) and the second support structure (130) in the first direction and connected to the second mounting bracket (151) and the second support structure (130).

7. The hot wire module (100) according to claim 6, characterized in that, The hot wire module (100) further includes a guide structure (160) which is slidably connected to the first support structure (120) and the second support structure (130) so that the first support structure (120) and the second support structure (130) can slide relative to the guide structure (160) in the first direction.

8. A chemical vapor deposition apparatus (10), characterized in that, It includes at least two first conveying mechanisms (300), at least two electrode assemblies (200), and at least one hot wire module (100) as described in any one of claims 1 to 7. The two first delivery mechanisms (300) are arranged at intervals along a third direction for delivering reactants and / or dopants; The first hot wire array (111) and the second hot wire array (112) of each hot wire module (100) are respectively connected to two electrode assemblies (200) at both ends in the second direction, and a substrate (20) is arranged between the first hot wire array (111) and the second hot wire array (112). Each of the hot wire modules (100) is arranged between two of the first delivery mechanisms (300) so that the substrate (20) receives the reactants and / or dopants delivered by the first delivery mechanisms (300).

9. The chemical vapor deposition apparatus (10) according to claim 8, characterized in that, It also includes at least one second conveying mechanism (400); The second delivery mechanism (400) is arranged at at least one end of the substrate (20) opposite to the first direction or the second direction, for delivering dopant to at least two sides of the substrate (20).

10. The chemical vapor deposition apparatus (10) according to claim 9, characterized in that, The second conveying mechanism (400) includes two air guide pipes (410); The two gas guide pipes (410) are arranged at intervals along the third direction, and the base (20) is arranged between the two gas guide pipes (410) along the third direction; Each of the gas guide pipes (410) is provided with gas guide holes (411) arranged at intervals along the length of the gas guide pipe (410) to deliver dopant to the surface of the substrate (20).

11. The chemical vapor deposition apparatus (10) according to claim 9, characterized in that, It also includes a reaction chamber (500), a growth box (600), a third conveying mechanism, and an exhaust mechanism (700); The growth box (600) is disposed in the reaction chamber (500), and the growth box (600) contains the substrate (20), a plurality of first delivery mechanisms (300), a plurality of second delivery mechanisms (400), a plurality of electrode assemblies (200) and a plurality of hot wire modules (100). Multiple hot wire modules (100) are arranged at intervals along at least one direction and disposed within the growth box (600); The exhaust mechanism (700) and the third conveying mechanism are located outside the reaction chamber (500) and are both connected to the reaction chamber (500). The third conveying mechanism is connected to each of the first conveying mechanisms (300) and each of the second conveying mechanisms (400) through the reaction chamber (500).

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