Heating control method and heating control system for semiconductor equipment

Abstract

The present invention provides a heating control method and control system for semiconductor equipment. In the heating control method of the present invention, the i-th optimal heating power of each of the first heating zone and the second heating zone is obtained through step Si to perform the i-th heating process, and step S(i+n) performs prediction calculation based on target temperature-related parameters, predicted temperature-related parameters in step Si, and system delay correction values ​​of each of the first heating zone and the second heating zone, so that the prediction of the optimal heating power in the next step is based on the predicted temperature-related parameters predicted in the previous step. Compared with the prediction of the optimal heating power based on the real-time temperature-related parameters in the previous step, the equilibrium time of temperature control is significantly shortened, and the prediction calculation of step S(i+n) introduces the system delay correction value of each heating zone obtained in step Si, which reduces or avoids the problem of long and unstable temperature stabilization time caused by system response delay during the execution of S(i+n).

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and in particular to a heating control method and a heating control system for semiconductor equipment. Background Art

[0002] Vapor deposition (CVD) involves depositing a thin film on a substrate through a physical or chemical reaction using a process gas at a specific temperature and pressure. Conventional CVD equipment heats a pedestal supporting the substrate using a heating device, transferring heat from the pedestal to the substrate.

[0003] In order to ensure uniform temperature everywhere on the substrate or to ensure uniform temperature between different substrates, the heating device is usually zoned and controlled, that is, the upper computer drives the temperature control unit to control the heating of each heating zone on the heating device respectively, and the temperature measuring unit obtains and feeds back the temperature of the corresponding heated zone to the upper computer, so that the upper computer drives the temperature control unit to adjust the heating power of each heating zone in real time.

[0004] Ideally, the time lag in the response interaction between the host computer, temperature control unit, heating device, and temperature measurement unit should be very short or even nonexistent, so that the controlled variable can be controlled in a timely manner. However, in reality, the time lag between the heating device responding to the temperature control unit's drive control and starting to generate heat and the temperature control unit issuing a drive instruction to the heating device, as well as the time lag between the temperature control unit responding to the host computer's control instruction and the host computer issuing a control instruction, causes the host computer's temperature control to precede the actual temperature response of the heating device, making it impossible to control the controlled variable in a timely manner. The temperature control performed by the host computer based on the controlled variable information fed back by the temperature measurement unit has obvious lag, making the heating device prone to overshoot and the system stabilization time long, resulting in poor stability. This can also affect the quality of the heated object, such as the thin film deposited on the substrate. Summary of the Invention

[0005] The present invention provides a heating control method and a heating control system for semiconductor equipment, so as to alleviate or avoid the situation that the temperature stabilization time is long and the stability is poor.

[0006] The semiconductor device includes a heating device and a heated device. The heating device includes adjacent first and second heating zones. The first and second heating zones generate heat to transfer heat to adjacent first and second heated zones of the heated device, respectively.

[0007] To achieve the above object, the heating control method of the present invention comprises the following steps:

[0008] S0: Get the target temperature T setcontrolling the heating device to generate heat in the first heating zone and the second heating zone;

[0009] Si: performing an i-th prediction calculation on the i-th temperature adjustment process based on the target temperature-related parameters and the obtained current temperature-related parameters of each of the first heating zone and the second heating zone, to obtain an i-th optimal temperature adjustment power for each of the first heating zone and the second heating zone, and an i-th predicted temperature-related parameter for each of the first heating zone and the second heating zone;

[0010] The heating device causes the first heating zone and the second heating zone to perform the i-th temperature adjustment process at their respective i-th optimal temperature adjustment powers;

[0011] Obtaining and performing correction calculations based on the issuance time of the control instructions corresponding to the i-th optimal temperature adjustment power of each of the first heating zone and the second heating zone, and the corresponding relationship between the real-time temperature and time of each of the first heating zone and the second heating zone, to obtain system delay correction values ​​for each of the first heating zone and the second heating zone;

[0012] S(i+n): performing an (i+n)th prediction calculation on the (i+n)th temperature adjustment process according to the target temperature-related parameters, the i-th predicted temperature-related parameters of each of the first heated zone and the second heated zone in step Si, and the system delay correction values ​​of each of the first heating zone and the second heating zone, obtaining the (i+n)th optimal temperature adjustment power of each of the first heating zone and the second heating zone, and the (i+n)th predicted temperature-related parameters of each of the first heated zone and the second heated zone, and controlling the first heating zone and the second heating zone to perform the (i+n)th temperature adjustment process at their respective (i+n)th optimal temperature adjustment powers;

[0013] Repeat step (i+n) until the first heated area and the second heated area each reach the target temperature, where n is a positive integer greater than or equal to 1 and is taken sequentially.

[0014] Optionally, in step S0, the target temperature related parameters further include: set The corresponding target power P set ;

[0015] In step S1, the current temperature-related parameters of the first heated area and the second heated area include the current temperature T of the first heated area. a0 and the corresponding current power P a0 , and the current temperature T of the second heated area b0 and the corresponding current power P b0 .

[0016] Optionally, in step S1, the step of performing the i-th prediction calculation to obtain the i-th optimal temperature control power of each of the first heating zone and the second heating zone includes:

[0017] According to the target temperature T set , the target power P set , the current temperature T of the first heated area a0 and the corresponding current power P a0 Calculate and obtain the i-th cost function C corresponding to the first heating zone ai , then for the i-th cost function C ai Minimize to obtain the i-th optimal temperature control power P of the first heating zone opt-ai ;

[0018] According to the target temperature T set , the target power P set , the current temperature T of the second heated area b0 and the corresponding current power P b0 Calculate and obtain the i-th cost function C corresponding to the second heating zone bi , then for the i-th cost function C bi Minimize to obtain the i-th optimal temperature control power P of the second heating zone opt-bi .

[0019] Optionally:

[0020] C ai =(T a0 -T set ) 2 +(P a0 -P set ) 2 , P opt-ai =argmin C ai ;

[0021] C bi =(T b0 -T set ) 2 +(P b0 -P set ) 2 , P opt-bi =argmin C bi .

[0022] Optionally, in step S1, the step of performing the i-th prediction calculation to obtain the i-th predicted temperature-related parameters of the first heated area and the second heated area includes:

[0023] According to the current temperature T of the first heated area a0 and the corresponding current power P a0 , and the current temperature T of the second heated area b0 Calculate and obtain the i-th predicted temperature T of the first heated zone ai and the corresponding i-th predicted power P ai ;

[0024] According to the current temperature T of the second heated area b0 and the corresponding current power P b0 , and the current temperature T of the first heated area a0 Calculate and obtain the predicted temperature T of the second heated zone i bi and the corresponding i-th predicted power P bi .

[0025] Optionally:

[0026] T ai =T a0 +a[P a0 -σT a0 4 -k(T a0 -T b0 )];

[0027] T bi =T b0 +α[P b0 -σT b0 4 -k(T b0 -T a0 )];

[0028] Where α is the temperature adjustment rate correlation coefficient, k is the heat transfer coefficient, and σ is the Stefan-Boltzmann constant.

[0029] Optionally, in step S(i+n), the step of performing the (i+n)th prediction calculation to obtain the (i+n)th optimal temperature control power of each of the first heating zone and the second heating zone includes:

[0030] According to the target temperature T set , the target power P set , the i-th predicted temperature T of the first heated zone ai and the corresponding i-th predicted power P ai Calculate and obtain the (i+n)th cost function C corresponding to the first heating zone a(i+n) , then for the (i+n)th cost function C a(i+n) Minimize to obtain the (i+n)th optimal heating power P of the first heating zone opt-a(i+n);

[0031] According to the target temperature T set , the target power P set , the i-th predicted temperature T of the second heated zone bi and the corresponding i-th predicted power P bi Calculate and obtain the (i+n)th cost function C corresponding to the second heating zone b(i+n) , then for the (i+n)th cost function C b(i+n) Minimize to obtain the (i+n)th optimal heating power P of the first heating zone opt-b(i+n) .

[0032] Optionally:

[0033] C a(i+n) =(T ai -T set ) 2 +(P ai -P set ) 2 , P opt-a(i+n) =argminC a(i+n) ;

[0034] C b(i+n) =(T bi -T set ) 2 +(P bi -P set ) 2 , P opt-b(i+n) =argminC b(i+n) .

[0035] Optionally, in step S(i+n), the step of performing the (i+n)th prediction calculation to obtain the (i+n)th predicted temperature-related parameters of each of the first heated zone and the second heated zone includes:

[0036] According to the i-th predicted temperature T of the first heated area ai and the corresponding i-th predicted power P ai , the i-th predicted temperature T of the second heated zone bi and the system delay correction value Dsa of the first heating zone to obtain the predicted temperature T of the first heating zone. a(i+n) and the corresponding predicted power P a(i+n) ;

[0037] According to the i-th predicted temperature T of the second heated area bi and the corresponding i-th predicted power P bi , the i-th predicted temperature T of the first heated zone aiAnd the system delay correction value D of the second heating zone sb Calculate and obtain the predicted temperature T of the second heated area b(i+n) and the corresponding predicted power P b(i+n) .

[0038] Optionally:

[0039] T a(i+n) =T ai +α[P ai -σT ai 4 -k(T ai -T bi )-D sa ];

[0040] T b(i+n) =T bi +α[P bi -σT bi 4 -k(T bi -T ai )-D sb ];

[0041] Where α is the temperature adjustment rate correlation coefficient, k is the heat transfer coefficient, and σ is the Stefan-Boltzmann constant.

[0042] Optionally, in step S(i+n):

[0043] The (i+n)th predicted temperature related parameters of the first heated area and the second heated area include: the (i+n)th predicted temperature T of the first heated area a(i+n) and the corresponding (i+n)th predicted power P a(i+n) , and the (i+n)th predicted temperature T of the second heated zone b(i+n) and the corresponding (i+n)th predicted power P b(i+n) .

[0044] Optionally, the control instruction corresponding to the i-th optimal temperature adjustment power of the first heating zone is a first heating zone power control instruction, and the control instruction corresponding to the i-th optimal temperature adjustment power of the second heating zone is a second heating zone power control instruction. In step S1, the step of performing correction calculation to obtain the system delay correction value of each of the first heating zone and the second heating zone includes:

[0045] Obtain and use the time t of issuing the power control instruction of the first heating zone ia , the corresponding relationship between the real-time temperature and time of the first heated area, and the temperature T corresponding to the first heated area at the time ti is obtained. sa ;

[0046] Obtain and use the issuing time t of the second heating zone power control instruction ib , the corresponding relationship between the real-time temperature of the second heated area and time, and the second heated area at the time t ib The corresponding temperature T sb ;

[0047] According to T sa and T sb Calculate and obtain the system delay correction value D of the first heating zone sa , and obtain the system delay correction value D of the second heating zone sb .

[0048] Optionally:

[0049] D sa =σT 4 sa +k(T sa -T sb );

[0050] D sb =σT 4 sb +k(T sb -T sa );

[0051] Where k is the thermal conductivity and σ is the Stefan-Boltzmann constant.

[0052] Optionally, the step S0 further includes controlling the heating device to perform an initial temperature adjustment process on the first heating zone and the second heating zone, and obtaining current temperature-related parameters of the first heating zone and the second heating zone.

[0053] Optionally, the control instruction corresponding to the i-th optimal temperature adjustment power of the first heating zone is a first heating zone power control instruction, and the control instruction corresponding to the i-th optimal temperature adjustment power of the second heating zone is a second heating zone power control instruction;

[0054] In step S1, the step of performing correction calculation to obtain the system delay correction value of each of the first heating zone and the second heating zone includes:

[0055] Obtain and use the time t of issuing the power control instruction of the first heating zone pai , the corresponding relationship between the real-time temperature and time of the first heated area, and the trend mutation time t′ when the temperature adjustment rate first undergoes a trend mutation since the initial temperature adjustment process in the corresponding relationship between the real-time temperature and time of the first heated area pai , get the system delay correction value D of the first heating zonesa ;

[0056] Obtain and use the issuing time t of the second heating zone power control instruction pbi , the corresponding relationship between the real-time temperature and time of the second heated zone, and the trend mutation time t′ when the temperature adjustment rate first undergoes a trend mutation since the initial temperature adjustment process in the corresponding relationship between the real-time temperature and time of the second heated zone pbi , get the system delay correction value D of the second heating zone sb .

[0057] Optionally,

[0058] D sa =σT 4 sai +k(T sai -T sbi );

[0059] D sb =σT 4 sbi +k(T sbi -T sai );

[0060] in:

[0061] In the real-time temperature and time correspondence of the first heated area, the i-th temperature adjustment process is at t' ai The time ends, since t′ ai Time minus Δt dely-ai The temperature value corresponding to the time node after the duration of sai , Δt dely-ai =(t′ pai -t pai );

[0062] In the corresponding relationship between the real-time temperature and time of the second heating zone, the i-th temperature adjustment process is at t' bi The time ends, since t′ bi After Δt dely-bi The temperature value corresponding to the time node after the duration of sbi , Δt dely-bi =t′ pbi -t pbi .

[0063] The heating control system provided in the present application is used to execute the heating control method to control the first heating zone and the second heating zone respectively.

[0064] As described above, the heating control method for semiconductor equipment of the present invention and the heating control system for implementing the heating control method both have the following beneficial effects:

[0065] In the heating control method of the present invention, the i-th optimal heating power of each of the first heating zone and the second heating zone is obtained through the step Si to perform the i-th heating process, and step S(i+n) performs prediction calculation based on the target temperature-related parameters, the predicted temperature-related parameters in the step Si, and the system delay correction values ​​of each of the first heating zone and the second heating zone, so that the prediction of the optimal heating power in the next step is based on the predicted temperature-related parameters obtained by the previous step. Compared with the prediction of the optimal heating power based on the real-time temperature-related parameters in the previous step, the equilibrium time of temperature control is significantly shortened, and the prediction calculation of step S(i+n) introduces the system delay correction value of each heating zone obtained in step Si, which reduces or avoids the problem of long and unstable temperature stabilization time caused by system response delay during the execution of S(i+n). BRIEF DESCRIPTION OF THE DRAWINGS

[0066] Figure 1 Shown is a schematic structural diagram of the chemical deposition equipment of the present application.

[0067] Figure 2 Shown is a flow chart of the heating control method of the present application.

[0068] Figure 3 Schematic diagram of the functional blocks of a heating device with two zones.

[0069] Figure 4a and Figure 4b and Figure 5a and Figure 5b Shown is a schematic diagram of the partitioned structure of the heating device and the heated device in the heating control method provided in the second embodiment of the present invention.

[0070] Figure 6 Displayed as a graph of the real-time temperature and time of a heated area. DETAILED DESCRIPTION

[0071] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0072] One aspect of the present invention provides a semiconductor device comprising a heating device and a heated device, wherein the semiconductor device is a vapor deposition device, the heating device is a heating device within the vapor deposition device, and the heated device may be a susceptor for supporting a substrate within the vapor deposition device. The functions of the heating device may include, but are not limited to, heating the susceptor, heating the process chamber walls, heating the spray device, heating the air inlet and outlet pipes, and the like, so as to enable zoned heating control of the heated object.

[0073] Vapor deposition equipment can be chemical vapor deposition (CVD) equipment or physical vapor deposition (PVD) equipment. CVD equipment can be plasma enhanced chemical vapor deposition (PECVD) equipment, metal-organic chemical vapor deposition (MOCVD) equipment, atmospheric pressure chemical vapor deposition (APCVD) equipment, etc. PVD equipment can be vacuum evaporation equipment, sputtering equipment, ion plating equipment, etc.

[0074] The specific embodiment of the present invention is described by taking a chemical vapor deposition device as an example. It should be understood that this device is only exemplary and the present invention is not limited to this device. Figure 1 As shown, the chemical vapor deposition equipment includes a process chamber 1, a base 2 for carrying a substrate 4 arranged in the process chamber 1, a heating device 3 is provided under the base 2, and the base 2 is a heated device exemplified in this embodiment. The heating device 3 has two adjacent heating zones, and accordingly, the base 2 has two heated zones corresponding to the two heating zones of the heating device 3, and the two heated zones are also adjacent. The cross-section of the process chamber 1 is generally circular or quasi-circular, or it can be a rectangular structure and other structures well known to those skilled in the art, which will not be elaborated here. This embodiment takes a process chamber with a circular cross-section as an example, in which the cross-sections of the base 2 and the heating device 3 are both circular structures. The heating control method provided in this application is to separately control the two heating zones of the heating device 3 to control the heat generation in the two heating zones so that the two heated zones of the base 2 are heated.

[0075] The heating control method of this application refers to Figure 2 , including the following steps:

[0076] S0: Get the target temperature T set controlling the heating device to generate heat in the first heating zone and the second heating zone;

[0077] Si: performing an i-th prediction calculation on the i-th temperature adjustment process based on the target temperature-related parameters and the obtained current temperature-related parameters of each of the first heating zone and the second heating zone, to obtain an i-th optimal temperature adjustment power for each of the first heating zone and the second heating zone, and an i-th predicted temperature-related parameter for each of the first heating zone and the second heating zone;

[0078] controlling the first heating zone and the second heating zone to perform the i-th temperature adjustment process at their respective i-th optimal temperature adjustment powers;

[0079] Obtaining and performing correction calculations based on the issuance time of the power control instructions corresponding to the i-th optimal temperature control power of each of the first heating zone and the second heating zone, and the corresponding relationship between the real-time temperature and time of each of the first heating zone and the second heating zone, to obtain system delay correction values ​​for each of the first heating zone and the second heating zone;

[0080] S(i+n): performing an (i+n)th prediction calculation on the (i+n)th temperature adjustment process according to the target temperature-related parameters, the i-th predicted temperature-related parameters of each of the first heated zone and the second heated zone in step Si, and the system delay correction values ​​of each of the first heating zone and the second heating zone, obtaining the (i+n)th optimal temperature adjustment power of each of the first heating zone and the second heating zone, and the (i+n)th predicted temperature-related parameters of each of the first heated zone and the second heated zone, and controlling the heating device through the (i+n)th power control instruction so that the first heating zone and the second heating zone respectively perform the (i+n)th temperature adjustment process at their respective (i+n)th optimal temperature adjustment powers;

[0081] Repeat step (i+n) until the first heated area and the second heated area each reach the target temperature, where n is a positive integer greater than or equal to 1 and is taken sequentially.

[0082] Example 1

[0083] This embodiment provides a heating control system, which is specifically a dual-zone heating control system, that is, the dual-zone heating control system performs temperature rise control on the two heating zones of the heating device of the semiconductor device to make the two heating zones generate heat. Figure 3Taking the heating device including two partitions, partition a and partition b, as an example, the heating control system includes a partition a power control module, a partition b power control module, a partition a temperature measurement module, a partition b temperature measurement module and a prediction processing module.

[0084] The number of power control modules corresponds to the number of heating zones of the heating device to achieve one-to-one control, i.e. Figure 3 The power control module for partition a shown corresponds to partition a electrically connected to the heating device to control the heating of partition a, and the power control module for partition b corresponds to partition b electrically connected to the heating device to control the heating of partition b. The prediction processing module is respectively connected to the power control modules of each partition and the temperature measurement modules of each partition. The prediction processing module receives information fed back by each temperature measurement module and each power control module, pre-stores target temperature-related parameters including the target temperature, and performs prediction calculations based on the above information to obtain prediction information and optimal heating power information, and sends power control instructions to each power control module based on the optimal heating power. Each power control module drives each heating zone of the heating device to generate heat in response to the power control instructions it receives, thereby controlling the temperature of the corresponding heated area on the heated device, and stores the real-time power at each moment for information exchange with the prediction processing module.

[0085] Each zone temperature measurement module is used to obtain the real-time temperature of each heated zone of the heated device and to feed this real-time temperature back to the prediction processing module. The temperature measurement module may include a contact temperature measurement unit to obtain the surface temperature of each heated zone of the heated device, or a non-contact temperature measurement unit to obtain the temperature near each heated zone of the heated device. In an optional embodiment, the number of temperature measurement units is at least equal to the number of heated zones of the heated device and is provided in a one-to-one correspondence to obtain the real-time temperature of each heated zone of the heated device.

[0086] The prediction processing module is provided with a storage module for storing the parameter data obtained from each power control module and each temperature measurement module, as well as the prediction information obtained by the prediction calculation of each step.

[0087] In an optional embodiment, the temperature measuring unit can be a component such as a thermocouple that can collect temperature information. The power control module can specifically be a PSU (Power Supply Unit). The above-mentioned storage module can be built into the prediction processing module or can be externally installed as an independent module. The storage module stores various types of collected information, calculated information, parameter information, and corresponding relationship information for prediction and processing calls. The prediction processing module can specifically include a host computer and a PLC. The host computer performs the prediction calculation, and the PLC performs the conversion and transmission of logic control instructions. It can be understood that the specific type and layout of each module can be selected according to actual needs.

[0088] Example 2

[0089] This embodiment provides a method for controlling heating of a semiconductor device. In this embodiment, Figure 4a and Figure 4b As shown, the heating device of the semiconductor heating device includes two partitions: partition a and partition b. Partition a and partition b are arranged adjacent to each other, for example Figure 4a As shown, they are arranged side by side, or as Figure 4b As shown, the partition b is arranged in a manner surrounding the partition a. The above partition a and partition b of the heating device correspond to Figure 5a and Figure 5b The heated area a' and the heated area b' of the heated device (ie the base) are shown.

[0090] The same substrate can cover Figure 4b The heating zone a' and the heating zone b' shown can also be different substrates placed in the heating zone a' and the heating zone b' respectively. In order to ensure the temperature uniformity of the substrate surface, the host computer controls the heating of the partition a and the partition b respectively through the temperature control unit and introduces a system delay correction to overcome the problem that the controlled quantity cannot be controlled in time due to the response delay between the host computer, the temperature control unit and the partitions. In addition, due to the adjacent positional relationship between the heating zone a' and the heating zone b' of the base, heat conduction will occur between the adjacent heating zones, that is, the temperature of the heating zone a' is affected by the heat transfer of the heating zone b', and the temperature of the heating zone b' is affected by the heat transfer of the heating zone a'. Therefore, in this embodiment, the host computer also introduces a heat conduction correction calculation in the process of heating control of each partition of the heater.

[0091] For the case where the above-mentioned heating device and the heated device respectively include two partitions, partition a of the heating device serves as the first heating zone, and the corresponding partition a' of the heated device serves as the first heated zone of the heated device; partition b of the heating device serves as the second heating zone, and the corresponding partition b' of the heated device serves as the second heated zone of the heated device. The temperature rise control process is described in detail.

[0092] In step S0 of this embodiment, an initial temperature adjustment process is first performed, specifically an initial temperature rise process. The prediction processing module sends an initial power control instruction to the power control module of partition a. The power control module connected to partition a responds to the initial power control instruction and performs initial temperature rise control on partition a. In response to the initial temperature rise drive control, partition a is heated at the initial temperature rise rate until the heated zone a' reaches the current temperature T a0 ;

[0093] In step S0 of some embodiments, the initial temperature adjustment process can be a temperature increase process starting from room temperature, or it can be an initial temperature adjustment process that is started after the temperature is increased from room temperature to a certain temperature (for example, at a maximum temperature increase rate). This can save time and effectively avoid temperature overshoot.

[0094] In this embodiment, the target temperature T set is 800℃, with the current temperature T a0 The initial temperature rise control is performed from room temperature to a target temperature 5°C lower than 800°C, that is, the current temperature T a0 The temperature is 795℃, and a deviation of ±0.1℃ is allowed in actual control.

[0095] In some embodiments, the target temperature T set is 800℃, with the current temperature T a0 The initial temperature rise control is performed from room temperature with a target temperature of 5°C to 50°C lower than 800°C.

[0096] In some embodiments, the current temperature T a0 The target temperature T set at least 90% of the

[0097] The above current temperature T a0 is less than the set temperature Tset, optionally, the current temperature T a0 Set to a temperature higher than the set temperature T set 0.5% to 10% lower, that is, T a0 =(90%~99.5%)T set ; Further, the current temperature T a0 Set to a temperature higher than the set temperature T set 0.5% to 7% lower, that is, T a0 =(93%~99.5%)T set Therefore, specifically, according to the target temperature T set Set the current temperature T a0 ,

[0098] For example, in an optional embodiment, the target temperature T set It is about 200℃, at this time you can set the current temperature T a0 3℃~5℃ lower than 200℃, that is, set the current temperature T a0 It is 195℃~197℃.

[0099] In step S0 of this embodiment, the current temperature-related parameters of the heated area a′ and the heated area b′ are obtained, including the current temperature T of the heated area a′. a0 and the corresponding current power P a0 When the current temperature of the heated area b′ is T b0and the corresponding current power P b0 After step S0 of this embodiment is completed, the set current temperature T is reached. a0 After that, from the current temperature T a0 To target temperature T set The heating process is finely controlled step by step, specifically:

[0100] Execute step S1 (i.e., i=1): According to T set , and T set The corresponding target power P set , the current temperature T of the first heated area a' a0 and the corresponding current power P a0 When the current temperature of partition b′ is T b0 and the corresponding current power P b0 The first prediction calculation is performed to predict the control parameters of the first heating process to guide the subsequent first heating process. The specific steps include:

[0101] S11: The prediction processing module predicts the optimal heating power P for partition a to execute the first heating process opt-ai , predicted temperature T ai and the corresponding predicted power P ai ; and predict the optimal heating power P for performing the first heating process in partition b opt-ai ;

[0102] Specifically, the prediction processing module is based on the pre-stored target temperature T set and the target power P set , the current temperature T of the first heated area fed back by the temperature measurement module in area a a0 , the feedback from the power control module in area a and T a0 The corresponding current power P a0 Calculate and obtain the first cost function C corresponding to the first heating zone a1 , then for the first cost function C a1 Minimize the first optimal temperature control power P of the first heating zone opt-a1 ; More specifically: C a1 =(T a0 -T set ) 2 +(P a0 -P set ) 2 , P opt-a1 =argmin C a1 ; The prediction processing module will P opt-a1 The information is converted into corresponding power control instructions and sent to the power control module of partition a;

[0103] Specifically, according to the target temperature T set , the target power P set , the current temperature T of the second heated area b0 and the corresponding current power P b0 Calculate and obtain the first cost function C corresponding to the second heating zone b1 , then for the first cost function C b1 Minimize the first optimal temperature control power P of the second heating zone opt-b1 More specifically: C b1 =(T b0 -T set ) 2 +(P b0 -P set ) 2 , P opt-b1 =argmin C b1 The prediction processing module will P opt-b1 Convert it into corresponding power control instructions and send them to the power control module in area B.

[0104] Specifically, the temperature T of the heated area a′ after the first heating process is predicted a1 =T a0 +α[P a0 -σT a0 4 -k(T a0 -T b0 )]; predict the temperature T of the partition b′ after the first heating process is completed b1 =T b0 +α[P b0 -σT b0 4 -k(T b0 -T a0 )]. There is heat conduction between adjacent heated areas, so the heat transfer effect of adjacent heating areas needs to be taken into account. Among them, α is the coefficient related to the heating rate, k is the heat conductivity coefficient, which is related to the materials of the heated areas a′ and b′, ​​respectively. α and k are system settings; σ is the Stefan-Boltzmann constant, which is 5.67x10 -8 W / m 2 K.

[0105] S12: The power control module of zone a controls zone a to heat up at the first optimal heating rate P according to the corresponding power control instruction. opt-a1 During the first heating process, the power control module of zone b controls the zone b to P according to the corresponding power control instruction. opt-b1 Perform the first heating process;

[0106] S13: Obtain the respective delay times Δt of partition a and partition b dely-a1 and Δt dely-b1 , and their respective system delay correction values ​​D sa and D sb , specifically:

[0107] In order to eliminate the obvious lag in temperature control caused by the time lag between the heating device starting to generate heat in response to the drive control of the temperature control unit and the temperature control unit issuing a drive instruction to the heating device, as well as the time lag between the temperature control unit responding to the control instruction of the host computer and the host computer issuing a control instruction in the subsequent heating process, in the above-mentioned first heating process, the delay time of each partition of the heating process and the heating delay item are calculated and determined.

[0108] The delay times and heating delay terms for each zone are caused by the response lag between the various units of the heating device—in other words, the inherent response characteristics of the hardware. Therefore, they can be considered to be constant throughout the heating process and do not change with the heating process. Therefore, determining these delay times and heating delay terms during the first heating process for zones a and b allows for predictive calculations during subsequent heating processes. This can reduce or even eliminate the long and unstable temperature stabilization times caused by the inherent response lags of the hardware during subsequent heating processes.

[0109] The prediction processing module records the P opt-a1 The information is converted into the corresponding power control instruction and sent to the time of the power control module of partition a, and the corresponding relationship between the real-time temperature and time of partition a is obtained based on the real-time temperature feedback from the temperature measurement module of partition a. This corresponding relationship is fitted based on the real-time temperature data of the initial heating process and the first heating process of partition a. Specifically: partition a responds to the heating drive to control the corresponding area of ​​the heating zone a' on the heating base and performs the first heating process of duration Δt1. The temperature measurement unit of partition a feeds back the real-time temperature of the heating zone a' to the prediction processing module. Figure 6 Understand, the prediction processing module will P opt-a1 The time it takes for the information to be converted into the corresponding power control command and sent to the power control module in area a is t pa1 , obtained by fitting the real-time temperature data of the initial heating process of partition a and the real-time temperature data of the first heating process Figure 6 As can be seen from the real-time temperature and time correspondence of partition a, a trend mutation time t′ appears due to the change in heating rate. pa1 , the time delay caused by the inherent response characteristics of the aforementioned hardware, t′ pa1 Lagging behind t pa1 , there is a time difference Δt between the two dely-a1 =(t′ pa1 -tpa1 ). The first heating process is at t′ a1 At the end of the first heating process, considering the time lag caused by the inherent response characteristics of the hardware, it can be considered that the corresponding power control command for the end of the first heating process is at t′ a1 Before a1 Time of issuance, t′ a1 With t a1 The time difference between the moments is also Δt dely-a1 , so t a1 The temperature T corresponding to the moment sa1 As a benchmark, calculate the system delay correction value D of partition a sa =σT 4 sa1 +k(T sa1 -T sb1 ); where T sb1 The determination method of T sa1 The principle of determining is the same as that of and will not be elaborated here. k is the heat transfer coefficient, which is related to the materials of partitions a and b.

[0110] The prediction processing module records the P opt-b1 The information is converted into the corresponding power control instruction and sent to the time of the power control module of zone b. The corresponding relationship between the real-time temperature and time of partition b is obtained based on the real-time temperature feedback from the temperature measurement module of zone b. This corresponding relationship is fitted based on the real-time temperature data of the initial heating process and the first heating process of partition b. Specifically: In response to the temperature increase drive, partition b controls the corresponding heated zone b' on the heating base and performs the first heating process of duration Δt1. The temperature measurement unit of zone b feeds back the real-time temperature of the heated zone b' to the prediction processing module. Specifically, D sb =σT 4 sb1 +k(T sb1 -T sa1 ); For specific implementation methods, please refer to the above D sa Description of the calculation process.

[0111] Step S2 (i.e., i=1, n=1) specifically includes:

[0112] S21: According to T set 、P set , predicted temperature T of heated area a′ a1 and the corresponding predicted power P a1 , the predicted temperature T of the second heated zone b1 And the system delay correction value D of partition a sa Calculate and get the second cost function C of partition a a2 =(T a1 -T set )2 +(P a1 -P set ) 2 , the second best heating power P of partition a opt-a2 =argmin C a2 Similarly, the second cost function C of partition b b2 =(T b1 -T set ) 2 +(P b1 -P set ) 2 , the second best heating power P of partition b opt-b2 =argmin C b2 ;

[0113] According to the predicted temperature T of the heated area a′ a1 and the corresponding predicted power P a1 , the predicted temperature T of the heated area b′ b1 , predicted power D sa Calculate the second predicted temperature of partition a: T a2 =T a1 +α[P a1 -σT a1 4 -k(T a1 -T b1 )-D sa ];

[0114] According to the predicted temperature T of the heated area b′ b1 and the corresponding predicted power P b1 , the predicted temperature T of the first heated area a' a1 , predicted power D sb , calculate the second predicted temperature of partition b: T b2 =T b1 +α[P b1 -σT b1 4 -k(T b1 -T a1 )-D sb ];

[0115] S22: The power control module of zone a controls zone a to heat up at the second optimal heating power P according to the corresponding power control instruction. opt-a2 The second heating process is carried out, and the power control module of zone b controls the zone b to heat up with the second optimal heating power P according to the corresponding power control instruction. opt-b2 The second heating process is carried out for a duration of Δt2.

[0116] Step S3 (i=1, n=2) specifically includes:

[0117] S31: According to T set 、P set , predicted temperature T of heated area a′ a2 and the corresponding predicted power P a2 , the predicted temperature T of the heated area b′ b2 And the system delay correction value D of partition a sa Calculate and get the third cost function C of partition a a3 =(T a2 -T set ) 2 +(P a2 -P set ) 2 , the third best heating power P of partition a opt-a3 =argmin C a3 Similarly, the third cost function C of partition b b3 =(T b2 -T set ) 2 +(P b2 -P set ) 2 , the third best heating power P of partition b opt-b3 =argmin C b3 ;

[0118] According to the predicted temperature T of the heated area a′ a2 and the corresponding predicted power P a2 , the predicted temperature T of the heated area b′ b2 , predicted power D sa The third predicted temperature T of the heated area a′ is calculated a3 :T a3 =T a2 +α[P a2 -σT a2 4 -k(T a2 -T b2 )-D sa ];

[0119] According to the predicted temperature T of the heated area b′ b2 and the corresponding predicted power P b2 , the predicted temperature T of the heated area a′ a2 , predicted power D sb The third predicted temperature of the heated area b′ is calculated as follows:

[0120] T b3 =T b2 +α[P b2 -σT b2 4 -k(Tb2 -T a2 )-D sb ];

[0121] S33: The power control module of zone a controls zone a to heat up at the third optimal heating power P according to the corresponding power control instruction. opt-a3 The third heating process with a duration of Δt3 is carried out, and the power control module of zone b controls the zone b to P according to the corresponding power control instruction. opt-b3 The third heating process with a duration of Δt3 is carried out.

[0122] In step S4 (i=1, n=3):

[0123] S41: According to T set 、P set , predicted temperature T of heated area a′ a3 and the corresponding predicted power P a3 , the predicted temperature T of the heated area b′ b3 And the system delay correction value D of partition a sa Calculate and get C a4 =(T a3 -T set ) 2 +(P a3 -P set ) 2 , the 4th optimal heating power P of partition a opt-a4 =argmin C a4 , similarly, C b4 =(T b3 -T set ) 2 +(P b3 -P set ) 2 , the 4th optimal heating power P of partition b opt-b4 =argmin C b4 ;

[0124] S42: The power control module of zone a controls zone a to heat up at the fourth optimal heating power P according to the corresponding power control instruction. opt-a4 The fourth heating process with a duration of Δt4 is carried out until the target temperature is reached. The power control module of zone b controls zone b with P according to the corresponding power control instruction. opt-b4 The fourth heating process with a duration of Δt4 is performed until the target temperature is reached.

[0125] In summary, in this embodiment, i=1, n takes values ​​1, 2, and 3 in sequence. It can be understood that in D sa and D sb After confirmation, use D sa and D sbThe temperature control was performed at least once.

[0126] In some embodiments, the durations of the various heating processes may be equal, or may be different or unequal depending on actual control conditions and control requirements. The specific durations need to be adaptively adjusted based on actual control requirements, specifically depending on the degree of difference between the current temperature of each partition reached in step S0 and the target temperature, as well as the requirements for temperature stability and duration.

[0127] In this embodiment, the two partitions of the heating device are controlled to heat up separately and synchronously, and the optimal heating rate is used for heating in each heating process, thereby ensuring that the temperature of each partition gradually rises from the current temperature to the set temperature through multiple heating processes, and the error between the heating temperature and the target temperature of each heating process is controlled to a minimum, or even the error between the two is eliminated, thereby ensuring the consistency of the heating temperature and the set temperature, and preventing defects in the vapor deposition process caused by insufficient heating or excessive heating.

[0128] Example 3

[0129] This embodiment also provides a heating control method for semiconductor equipment, specifically providing another method for determining a system delay correction value in the heating control method, specifically: the control instruction corresponding to the i-th optimal temperature adjustment power of the first heating zone is the first heating zone power control instruction, and the control instruction corresponding to the i-th optimal temperature adjustment power of the second heating zone is the second heating zone power control instruction.

[0130] In step S1, the step of performing correction calculation to obtain the system delay correction value of each of the first heating zone and the second heating zone includes:

[0131] Obtain and use the time t of issuing the power control instruction of the first heating zone ia , the corresponding relationship between the real-time temperature of the first heated area and time, and the first heated area at the time t ia The corresponding temperature T sa ;

[0132] Obtain and use the issuing time t of the second heating zone power control instruction ib , the corresponding relationship between the real-time temperature of the second heated area and time, and the second heated area at the time t ib The corresponding temperature T sb ;

[0133] According to T sa and T sb Calculate and obtain the system delay correction value D of the first heating zone sa, and obtain the system delay correction value D of the second heating zone sb .

[0134] More specifically:

[0135] D sa =σT 4 sa +k(T sa -T sb );

[0136] D sb =σT 4 sb +k(T sb -T sa );

[0137] Where k is the thermal conductivity and σ is the Stefan-Boltzmann constant.

[0138] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A heating control method for a semiconductor device, characterized in that: The semiconductor device includes a heating device and a heated device, wherein the heating device comprises a first heating zone and a second heating zone adjacent to each other, wherein the first heating zone and the second heating zone generate heat to transfer heat to a first heated zone and a second heated zone adjacent to the heated device, respectively. The heating control method includes the following steps: S0: Get target temperature T set and the target temperature T set The corresponding target power P set , controlling the heating device to generate heat in the first heating zone and the second heating zone; Si: Perform the i-th prediction calculation for the i-th temperature adjustment process: According to the target temperature T set , the target power P set , and the current temperature T of the first heated area obtained a0 and the corresponding current power P a0 Calculate and obtain the i-th cost function C corresponding to the first heating zone ai , then for the i-th cost function C ai Minimize to obtain the i-th optimal temperature control power P of the first heating zone opt-ai According to the target temperature T set , the target power P set , and the current temperature T of the second heated area b0 and the corresponding current power P b0 Calculate and obtain the i-th cost function C corresponding to the second heating zone bi , then for the i-th cost function C bi Minimize to obtain the i-th optimal temperature control power P of the second heating zone opt-bi According to the current temperature T of the first heated area a0 and the current power P a0 , and the current temperature T of the second heated area b0 Calculate and obtain the i-th predicted temperature T of the first heated zone ai and the corresponding i-th predicted power P ai ; According to the current temperature T of the second heated area b0 and the current power P b0 , and the current temperature T of the first heated area a0 Calculate and obtain the predicted temperature T of the second heated zone i bi and the corresponding i-th predicted power P bi ; controlling the first heating zone and the second heating zone to perform the i-th temperature adjustment process at their respective i-th optimal temperature adjustment powers; Obtaining and performing correction calculations based on the issuance time of the control instructions corresponding to the i-th optimal temperature adjustment power of each of the first heating zone and the second heating zone, and the corresponding relationship between the real-time temperature and time of each of the first heating zone and the second heating zone, to obtain system delay correction values ​​for each of the first heating zone and the second heating zone; S(i+n): Perform the (i+n)th prediction calculation for the (i+n)th temperature adjustment process: According to the target temperature T set , the target power P set , the i-th predicted temperature T of the first heated area ai and the i-th predicted power P ai Calculate and obtain the (i+n)th cost function C corresponding to the first heating zone a(i+n) , then for the (i+n)th cost function C a(i+n) Minimize to obtain the (i+n)th optimal temperature control power P of the first heating zone opt-a(i+n) ; According to the target temperature T set , the target power P set , the i-th predicted temperature T of the second heated zone bi and the i-th predicted power P bi Calculate and obtain the (i+n)th cost function C corresponding to the second heating zone b(i+n) , then for the (i+n)th cost function C b(i+n) Minimize to obtain the (i+n)th optimal temperature control power P of the second heating zone opt-b(i+n) According to the first heating zone of the i-th predicted temperature T ai and the i-th predicted power P ai , the i-th predicted temperature T of the second heated zone bi And the system delay correction value D of the first heating zone sa Calculate and obtain the (i+n)th predicted temperature T of the first heated zone a（i+n） and the corresponding (i+n)th predicted power P a(i+n) According to the second heating zone of the i-th predicted temperature T bi and the i-th predicted power P bi , the i-th predicted temperature T of the first heated zone ai And the system delay correction value D of the second heating zone sb Calculate and obtain the (i+n)th predicted temperature T of the second heated zone b(i+n) and the corresponding (i+n)th predicted power P b(i+n) ; Control the first heating zone to the (i+n)th optimal temperature control power P opt-a(i+n) The second heating zone uses the (i+n)th optimal temperature control power P opt-b(i+n) Performing the (i+n)th temperature adjustment process; Repeat step (i+n) until the first heated area and the second heated area each reach the target temperature, where n is a positive integer greater than or equal to 1 and is taken sequentially; wherein, ， ； ， ； ; ； ， ； ， ； ; ； Among them, α is the correlation coefficient of temperature adjustment rate, is the thermal conductivity coefficient, and σ is the Stefan-Boltzmann constant.

2. The heating control method of semiconductor equipment according to claim 1, wherein: The control instruction corresponding to the i-th optimal temperature control power of the first heating zone is the first heating zone power control instruction, and the control instruction corresponding to the i-th optimal temperature control power of the second heating zone is the second heating zone power control instruction. In step S1, the step of performing correction calculation to obtain the system delay correction value of each of the first heating zone and the second heating zone includes: Obtain and use the time t of issuing the power control instruction of the first heating zone ia , the corresponding relationship between the real-time temperature of the first heated area and time, and the first heated area at the time t ia The corresponding temperature T sa ; Obtain and use the issuing time t of the second heating zone power control instruction ib , the corresponding relationship between the real-time temperature of the second heated area and time, and the second heated area at the time t ib The corresponding temperature T sb ; According to T sa and T sb Calculate and obtain the system delay correction value of the first heating zone , and the system delay correction value of the second heating zone .

3. The heating control method of semiconductor equipment according to claim 2, wherein: ； ； in, is the thermal conductivity coefficient, and σ is the Stefan-Boltzmann constant.

4. The method for controlling heating of a semiconductor device according to claim 1, wherein: The step S0 further includes controlling the heating device to perform an initial temperature adjustment process on the first heating zone and the second heating zone, and obtaining current temperature-related parameters of the first heating zone and the second heating zone.

5. The heating control method of semiconductor equipment according to claim 4, wherein: The control instruction corresponding to the i-th optimal temperature adjustment power of the first heating zone is the first heating zone power control instruction, and the control instruction corresponding to the i-th optimal temperature adjustment power of the second heating zone is the second heating zone power control instruction; In step S1, the step of performing correction calculation to obtain the system delay correction value of each of the first heating zone and the second heating zone includes: Obtain and control the power of the first heating zone according to the time of issuance of the instruction , the corresponding relationship between the real-time temperature and time of the first heated area, and the trend mutation time when the temperature adjustment rate first undergoes a trend mutation since the initial temperature adjustment process in the corresponding relationship between the real-time temperature and time of the first heated area , get the system delay correction value D of the first heating zone sa ; Obtain and issue the power control instruction of the second heating zone according to the time , the corresponding relationship between the real-time temperature and time of the second heated zone, and the trend mutation time when the temperature adjustment rate first undergoes a trend mutation since the initial temperature adjustment process in the corresponding relationship between the real-time temperature and time of the second heated zone , get the system delay correction value D of the second heating zone sb .

6. The method for controlling heating of a semiconductor device according to claim 5, wherein: ； ； Among them: In the corresponding relationship between the real-time temperature and time of the first heated area, the i-th temperature adjustment process is The time is over, since Time subtraction The temperature value corresponding to the time node after the duration of , ; In the corresponding relationship between the real-time temperature and time of the second heated area, the i-th temperature adjustment process is The time is over, since Time of serene The temperature value corresponding to the time node is , .

7. A heating control system for semiconductor equipment, characterized in that: The semiconductor device includes a heating device and a heated device, the heating device includes a first heating zone and a second heating zone adjacent to each other, and the heating control system is used to execute the heating control method according to any one of claims 1 to 6 to control the first heating zone and the second heating zone respectively.

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