Photovoltaic silicon wafer mask lithography system

Abstract

The present invention relates to the technical field of electronic circuit board manufacturing, and in particular to a photovoltaic silicon wafer mask lithography system, comprising an irradiation module, a feature acquisition module, a feature analysis module and a control module, wherein the irradiation module is used to irradiate resin on a silicon wafer through a mask plate to form an insoluble photosensitive resin, the feature acquisition module is used to obtain mask image information of the mask plate and an infrared image of the irradiated silicon wafer, the feature analysis module solves etching texture characterization parameters for different mask plates in combination with the etching pattern and etching depth of the mask plate, so as to classify the complex difference categories of the silicon wafer according to the etching texture characterization parameters, and the control module controls the action of the irradiation module according to the complex difference categories, thereby ensuring the etching accuracy for the silicon wafer and improving the lithography efficiency for the silicon wafer.

Description

Technical Field

[0001] The invention relates to the technical field of electronic circuit board manufacturing, and in particular to a photovoltaic silicon wafer mask lithography system. Background Art

[0002] For photovoltaics, large-area sensors, etc., precise circuits need to be realized. The etching of different circuits has different requirements for the efficiency and resolution of lithography. The lithography system is a process of irradiating photosensitive resin with light to induce a cross-linking reaction in the resin. Therefore, the light source is the core component.

[0003] Through a large area of ​​completely parallel light output from ultraviolet to deep ultraviolet bands, such a parallel light source is used, and an area mask exposure light source is introduced to irradiate the resin to form a circuit pattern.

[0004] Chinese patent publication number: CN101694561A, discloses a multi-mask lithography machine silicon wafer stage system, the system contains a base, at least one silicon wafer stage, a group of optical lenses and a mask stage system. The mask stage system includes a mask stage base, a mask moving stage and a mask carrying stage, the long side of the mask stage base is in the Y direction, and the short side is in the X direction; the mask moving stage moves linearly along the Y direction on the mask stage base, and the mask carrying stage moves linearly along the X direction on the mask moving stage; at least two mask plate mounting grooves and two mask plates are arranged on the mask carrying stage along the X direction, and a mask plate is placed in each mask plate mounting groove;

[0005] However, the following problems still exist in the prior art. In the prior art, when responding to different lithography requirements, the impact of differences in texture density in the mask on the lithography process is not considered, especially the stress easily generated in the resin during the resin cross-linking reaction under different texture densities, which affects the final lithography effect and lithography efficiency of the silicon wafer. Summary of the invention

[0006] To this end, the present invention provides a photovoltaic silicon wafer mask lithography system to overcome the problem in the prior art that, when meeting different lithography requirements, the impact of differences in texture density in the mask on the lithography process is not considered, especially the problem that stress is easily generated in the resin during the resin cross-linking reaction caused by different texture densities, thereby affecting the final lithography effect and lithography efficiency of the silicon wafer.

[0007] To achieve the above object, the present invention provides a photovoltaic silicon wafer mask lithography system, comprising:

[0008] An irradiation module, which is used to irradiate the resin on the silicon wafer through a mask to form an insoluble photosensitive resin, and the mask is pre-defined with an etching pattern;

[0009] A feature acquisition module, which is used to respectively acquire the mask image information of the mask plate and the infrared image of the irradiated silicon wafer;

[0010] A feature analysis module, which is connected to the feature acquisition module, is used to obtain the etching texture density features in each etching sub-region in the mask image information, and calculate the etching texture characterization parameters in combination with the etching depth, wherein the etching texture density features include the texture difference amount and the mean value of the texture quantity;

[0011] A control module, which is used to classify the complex difference categories of silicon wafers according to the etching line characterization parameters, and control the irradiation module according to the complex difference categories, including:

[0012] Control the irradiation module to irradiate each etched sub-area at a predetermined light intensity increase rate, obtain the infrared image of the feature acquisition module to determine the temperature difference of each etched sub-area, and determine whether to correct the light intensity increase rate according to the temperature difference; or continue to irradiate the resin at a predetermined light intensity.

[0013] Furthermore, the feature analysis module is used to obtain the dense features of etching lines in each etching sub-region in the mask image information, including:

[0014] To determine the etching patterns of each etching sub-region in the mask image information;

[0015] The variance of the number of etching lines in each etching sub-region is used to calculate the variance of the number of etching lines in each etching sub-region as the texture difference amount;

[0016] The average value of the number of etching lines in each etching sub-region is used as the average value of the number of lines.

[0017] Furthermore, the feature analysis module calculates the etching line characterization parameters according to formula (1):

[0018]

[0019] In formula (1), W represents the etching texture characterization parameter, D represents the texture difference, N represents the mean value of the texture number, T represents the etching depth, α represents the difference weight coefficient, β represents the mean weight coefficient, γ represents the depth weight coefficient, D0 represents the average value of the texture difference of each historical mask, N0 represents the average value of the mean value of the texture number of each historical mask, and T0 represents the average value of the etching depth of each historical mask.

[0020] Furthermore, the control module divides the complex difference categories of the silicon wafer based on the etching line characterization parameters, including:

[0021] If the etching texture characterization parameter is greater than the preset etching texture characterization parameter, the single silicon wafer is classified as a strong complex category;

[0022] If the etching texture characterization parameter is less than or equal to the preset etching texture characterization parameter, the single silicon wafer is classified into a weakly complex category.

[0023] Further, the control module controls the irradiation module to irradiate the resin on the silicon wafer based on the complex difference category of the silicon wafer, including:

[0024] If the complexity difference category of the silicon wafer is a strong complexity category, determining a predetermined light intensity increase rate based on the etching texture characterization parameters;

[0025] If the complexity difference category of the silicon wafer is a weak complexity category, the resin is continuously irradiated at a predetermined temperature.

[0026] Furthermore, the control module determines a predetermined light intensity increase rate based on the etching line characterization parameters, wherein:

[0027] The predetermined light intensity increase rate determined by the control module is inversely proportional to the etching line characterization parameter.

[0028] Furthermore, the control module determines whether to make correction for the predetermined light intensity increase rate based on the temperature difference, including:

[0029] If the temperature difference is less than or equal to the preset temperature difference, the silicon wafer of the same mask is continuously irradiated using the current predetermined light intensity increase rate;

[0030] If the temperature difference is greater than a preset temperature difference, the predetermined light intensity increase rate is corrected based on the temperature difference.

[0031] Furthermore, the control module is used to obtain the infrared image of the feature acquisition module to determine the temperature difference of each etching sub-region, including:

[0032] It is used to mark a number of calibration points on the infrared image and determine the temperature corresponding to each calibration point;

[0033] Used to calculate the variance of each temperature and obtain the temperature difference.

[0034] Further, the control module corrects the predetermined light intensity increase rate based on the temperature difference, including:

[0035] The magnitude of the correction to the predetermined rate of increase of light intensity is positively correlated with the amount of temperature difference.

[0036] Furthermore, the control module determines the predetermined light intensity based on the etching line characterization parameters, including:

[0037] The etching pattern characterization parameters are inversely proportional to the predetermined light intensity.

[0038] Compared with the prior art, the beneficial effect of the present invention lies in that the etching line characterization parameters are solved for different masks in combination with the etching pattern and etching depth of the mask, so as to determine different photolithography requirements according to the etching line characterization parameters, adopt different illumination parameters, and obtain the thermal distribution of the silicon wafer after the initial illumination when completing the preliminary illumination, so as to further determine whether to adjust the illumination parameters, thereby ensuring the etching accuracy of the silicon wafer and improving the photolithography efficiency of the silicon wafer.

[0039] Furthermore, the etching texture characterization parameters are calculated to determine the specific conditions of the mean number of textures, the texture difference and the etching depth of the current mask. In actual situations, when irradiating resin-coated silicon wafers corresponding to different mask plates, the requirements for the accuracy of resin presentation are not the same for different distribution densities of etching textures. In particular, under complex etching textures, stress interference is prone to occur between resin parts corresponding to different textures, affecting the quality of the finished product. In order to ensure the accurate presentation of the pattern pre-defined by the mask plate while balancing the efficiency of line acquisition, this scheme considers calculating the etching texture characterization parameters from the density of the texture and the etching depth. The etching texture characterization parameters record the complexity of each mask plate, and then classify the complex difference categories of the silicon wafer through the etching texture characterization parameters, providing data support for the subsequent control of irradiation parameters, while efficiently determining the complexity of the etching pattern of the mask plate, ensuring the lithography effect, and improving the lithography efficiency of the silicon wafer.

[0040] Furthermore, specific illumination parameters are determined according to the complex difference category of the silicon wafer. When the complex difference category is a strong complex category, the etching patterns corresponding to the mask plate are densely distributed. In order to ensure the stability of the etched lines, higher etching accuracy is required. In order to ensure that the photosensitive resin undergoes uniform polymerization reaction to ensure the accuracy of the product, the silicon wafer is irradiated at a predetermined light intensity increase rate, and the predetermined light intensity increase rate is determined according to the etching pattern characterization parameters. Different illumination measures are taken for different mask plates. While ensuring the lithography accuracy of the silicon wafer, the lithography efficiency of the silicon wafer is further improved.

[0041] Furthermore, it is determined whether to make corrections for the predetermined light intensity increase rate according to the temperature difference. During the irradiation process, the light energy absorbed by the silicon wafer will be converted into heat energy. If the irradiation effect is good, the energy absorption of each part of the silicon wafer surface is relatively uniform, resulting in a relatively uniform surface temperature distribution. On the contrary, if the irradiation effect is not good, there will be significant differences in the energy absorption of each part of the silicon wafer surface, resulting in uneven temperature distribution. The lighting condition is determined according to the temperature difference. When the temperature difference is greater than the preset temperature difference, the predetermined light intensity increase rate is corrected based on the temperature difference to ensure that each part of the silicon wafer is heated evenly, reduce the thermal stress generated inside the material, and thereby improve the photolithography accuracy of the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 This is a module block diagram of a photovoltaic silicon wafer mask lithography system according to an embodiment of the present invention;

[0043] Figure 2 A logic decision diagram for classifying complex difference categories of silicon wafers according to an embodiment of the present invention;

[0044] Figure 3 A logical decision diagram for irradiating the resin on the silicon wafer based on the complex difference categories of the silicon wafer according to an embodiment of the present invention;

[0045] Figure 4 This is a logic decision diagram for determining whether to make corrections for a predetermined light intensity increase rate according to an embodiment of the present invention. DETAILED DESCRIPTION

[0046] In order to make the objects and advantages of the present invention more clearly understood, the present invention is further described below in conjunction with embodiments; it should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0047] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the protection scope of the present invention.

[0048] It should be noted that, in the description of the present invention, terms such as "up", "down", "left", "right", "inside" and "outside" indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings. This is merely for the convenience of description and does not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present invention.

[0049] In addition, it should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0050] See also Figure 1 , Figure 2 , Figure 3 as well as Figure 4As shown, they are respectively a module block diagram of a photovoltaic silicon wafer mask lithography system according to an embodiment of the present invention, a logic decision diagram for classifying complex difference categories of silicon wafers, a logic decision diagram for irradiating resin on silicon wafers based on complex difference categories of silicon wafers, and a logic decision diagram for determining whether to make corrections for a predetermined light intensity increase rate; the photovoltaic silicon wafer mask lithography system according to an embodiment of the present invention comprises:

[0051] An irradiation module, which is used to irradiate the resin on the silicon wafer through a mask to form an insoluble photosensitive resin, and the mask is pre-defined with an etching pattern;

[0052] A feature acquisition module, which is used to respectively acquire the mask image information of the mask plate and the infrared image of the irradiated silicon wafer;

[0053] A feature analysis module, which is connected to the feature acquisition module, is used to obtain the etching texture density features in each etching sub-region in the mask image information, and calculate the etching texture characterization parameters in combination with the etching depth, wherein the etching texture density features include the texture difference amount and the mean value of the texture quantity;

[0054] A control module, which is used to classify the complex difference categories of silicon wafers according to the etching line characterization parameters, and control the irradiation module according to the complex difference categories, including:

[0055] Control the irradiation module to irradiate each etched sub-area at a predetermined light intensity increase rate, obtain the infrared image of the feature acquisition module to determine the temperature difference of each etched sub-area, and determine whether to correct the light intensity increase rate according to the temperature difference; or continue to irradiate the resin at a predetermined light intensity.

[0056] Specifically, the illumination module is composed of a number of illumination light sources, which can achieve completely parallel light output in the ultraviolet to deep ultraviolet bands over a large area, which will not be elaborated here.

[0057] Specifically, the illumination module uses a large-area parallel light source for irradiation, which can effectively solve the problem of exposure pattern failure caused by the slit diffraction effect. The introduction of a large-area mask exposure light source eliminates the need for scanning exposure and solves the problem of insufficient exposure resolution caused by the accuracy of the motion mechanism, thereby optimizing the edge jaggedness of 10μm-20μm line width line lithography.

[0058] Specifically, the mask image information of the mask plate can be obtained through a high-precision image detector, and the infrared image of the irradiated silicon wafer can be obtained through an infrared camera. This solution does not limit the specific equipment for obtaining the mask image information and the infrared image. It can be understood that as long as the mask image information and the infrared image can be obtained, this is the existing technology and will not be repeated.

[0059] Specifically, there is no limitation on the specific method of identifying etching lines. The etching lines can be determined by identifying the edge contours of the etching lines, and then the number of lines can be identified. The relevant algorithm can be imported into the logic processing unit to obtain the texture features in the mask image information. This is a prior art and will not be repeated here.

[0060] The etching texture characterization parameters are solved for different masks combined with the etching pattern and etching depth of the mask, so as to determine different lithography requirements according to the etching texture characterization parameters, adopt different illumination parameters, and obtain the thermal distribution of the silicon wafer after the initial illumination, so as to further determine whether to adjust the illumination parameters, thereby ensuring the etching accuracy of the silicon wafer and improving the lithography efficiency of the silicon wafer.

[0061] Specifically, the feature analysis module is used to obtain the dense features of etching lines in each etching sub-region in the mask image information, including:

[0062] To determine the etching patterns of each etching sub-region in the mask image information;

[0063] The variance of the number of etching lines in each etching sub-region is used to calculate the variance of the number of etching lines in each etching sub-region as the texture difference amount;

[0064] The average value of the number of etching lines in each etching sub-region is used as the average value of the number of lines.

[0065] Specifically, the feature analysis module calculates the etching line characterization parameters according to formula (1):

[0066]

[0067] In formula (1), W represents the etching texture characterization parameter, D represents the texture difference, N represents the mean value of the texture number, T represents the etching depth, α represents the difference weight coefficient, β represents the mean weight coefficient, γ represents the depth weight coefficient, D0 represents the average value of the texture difference of each historical mask, N0 represents the average value of the mean value of the texture number of each historical mask, and T0 represents the average value of the etching depth of each historical mask.

[0068] Specifically, α is 0.35, β is 0.3, and γ is 0.35.

[0069] Specifically, the number of historical masks to be selected can be freely set by those skilled in the art. It is only necessary to divide the complex situations of each mask when illuminating the silicon wafer corresponding to a single mask. This is the prior art and will not be elaborated on.

[0070] The etching texture characterization parameters are calculated to determine the specific conditions of the mean number of textures, the texture difference and the etching depth of the current mask. In actual situations, when irradiating the resin-coated silicon wafers corresponding to different mask plates, the requirements for the accuracy of resin presentation are different for the distribution density of different etching textures. In particular, under complex etching textures, stress interference is prone to occur between the resin parts corresponding to different textures, affecting the quality of the finished product. In order to ensure the accurate presentation of the pre-defined pattern of the mask plate while balancing the efficiency of line acquisition, this scheme considers calculating the etching texture characterization parameters from the density of the texture and the etching depth. The etching texture characterization parameters record the complexity of each mask plate, and then classify the complex difference categories of the silicon wafer through the etching texture characterization parameters, providing data support for the subsequent control of irradiation parameters, while efficiently determining the complexity of the etching pattern of the mask plate, ensuring the lithography effect, and improving the lithography efficiency of the silicon wafer.

[0071] Specifically, the control module divides the complex difference categories of the silicon wafer based on the etching line characterization parameters into:

[0072] If the etching texture characterization parameter is greater than the preset etching texture characterization parameter, the single silicon wafer is classified as a strong complex category;

[0073] If the etching texture characterization parameter is less than or equal to the preset etching texture characterization parameter, the single silicon wafer is classified into a weakly complex category.

[0074] The preset etching texture characterization parameter K0 is selected in the interval [0.65, 0.73].

[0075] Specifically, the control module controls the irradiation module to irradiate the resin on the silicon wafer based on the complex difference category of the silicon wafer, including:

[0076] If the complexity difference category of the silicon wafer is a strong complexity category, determining a predetermined light intensity increase rate based on the etching texture characterization parameters;

[0077] If the complexity difference category of the silicon wafer is a weak complexity category, the resin is continuously irradiated at a predetermined temperature.

[0078] The specific illumination parameters are determined according to the complex difference category of the silicon wafer. When the complex difference category is a strong complex category, the etching patterns corresponding to the mask plate are densely distributed. In order to ensure the stability of the etching line, higher etching accuracy is required. In order to ensure that the photosensitive resin undergoes uniform polymerization reaction to ensure the accuracy of the product, the silicon wafer is irradiated at a predetermined light intensity increase rate, and the predetermined light intensity increase rate is determined according to the etching pattern characterization parameters. Different illumination measures are taken for different mask plates. While ensuring the lithography accuracy of the silicon wafer, the lithography efficiency of the silicon wafer is further improved.

[0079] Specifically, the control module determines a predetermined light intensity increase rate based on the etching line characterization parameters, wherein:

[0080] The predetermined light intensity increase rate determined by the control module is inversely proportional to the etching line characterization parameter.

[0081] In this embodiment, optionally,

[0082] The etching pattern characterization parameter K is compared with the first preset characterization comparison threshold K1 and the second preset characterization comparison threshold K2.

[0083] If K≤K1, the predetermined light intensity increase rate is determined as the first predetermined light intensity increase rate V1, and V1=0.97V0;

[0084] If K1<K≤K2, the predetermined light intensity increase rate is determined as the second predetermined light intensity increase rate V2, and V2=0.93V0;

[0085] If K>K2, the predetermined light intensity increase rate is determined as the third predetermined light intensity increase rate V3, and V3=0.84V0;

[0086] Wherein, V0 is the initial predetermined light intensity increase rate, K1=1.2K0, K2=1.5K0.

[0087] Specifically, the control module determines whether to make corrections to the predetermined light intensity increase rate based on the temperature difference, including:

[0088] If the temperature difference is less than or equal to the preset temperature difference, the silicon wafer of the same mask is continuously irradiated using the current predetermined light intensity increase rate;

[0089] If the temperature difference is greater than a preset temperature difference, the predetermined light intensity increase rate is corrected based on the temperature difference.

[0090] The preset temperature difference E0 is selected within the interval [1.2U0, 1.3U0], U0 is preset, and the temperature difference of several silicon wafers at various moments during the irradiation process by the irradiation module is obtained in advance, and the average temperature difference U0 is calculated.

[0091] Determine whether to make corrections to the predetermined light intensity increase rate based on the temperature difference. During the irradiation process, the light energy absorbed by the silicon wafer will be converted into heat energy. If the irradiation effect is good, the energy absorption of each part of the silicon wafer surface is relatively uniform, resulting in a relatively uniform surface temperature distribution. On the contrary, if the irradiation effect is not good, there will be significant differences in the energy absorption of each part of the silicon wafer surface, resulting in uneven temperature distribution. The lighting conditions are determined based on the temperature difference. When the temperature difference is greater than the preset temperature difference, the predetermined light intensity increase rate is corrected based on the temperature difference to ensure that each part of the silicon wafer is heated evenly, reduce the thermal stress generated inside the material, and thereby improve the photolithography accuracy of the silicon wafer.

[0092] Specifically, the control module is used to obtain the infrared image of the feature acquisition module to determine the temperature difference of each etching sub-region, including:

[0093] It is used to mark a number of calibration points on the infrared image and determine the temperature corresponding to each calibration point;

[0094] Used to calculate the variance of each temperature and obtain the temperature difference.

[0095] Specifically, there is no limitation on the way of setting calibration points on the infrared image. It can be understood that the purpose of setting the calibration points is to collect temperature data of specific areas of the infrared image. The calibration points can be evenly distributed or set near the etching lines. The number of settings is determined by technicians in this field and will not be repeated here.

[0096] Specifically, the control module corrects the predetermined light intensity increase rate based on the temperature difference, including:

[0097] The magnitude of the correction to the predetermined rate of increase of light intensity is positively correlated with the amount of temperature difference.

[0098] In this embodiment, optionally,

[0099] The control module compares the temperature difference E with the first preset temperature comparison threshold E1 and the second preset temperature comparison threshold E2.

[0100] If E≤E1, the predetermined light intensity increase rate reduction is the first reduction c1, and c1=0.13c0;

[0101] If E1<E≤E2, the predetermined light intensity increase rate reduction is the second reduction amount c2, and c2=0.23c0;

[0102] If E>E2, the predetermined light intensity increase rate reduction amount is the third reduction amount c3, and c3=0.28c0;

[0103] Wherein, c0 is the initially determined predetermined light intensity increase rate, E1=1.2E0, E2=1.4E0.

[0104] Specifically, the control module determines the predetermined light intensity based on the etching line characterization parameters, including:

[0105] The etching pattern characterization parameters are inversely proportional to the predetermined light intensity.

[0106] In this embodiment, optionally,

[0107] The etching pattern characterization parameter K is compared with the third preset characterization comparison threshold K3 and the fourth preset characterization comparison threshold K4,

[0108] If K≤K3, the predetermined illumination intensity is determined as the first predetermined illumination intensity B1, and B1=1.3B0;

[0109] If K3<K≤K4, the predetermined illumination intensity is determined as the second predetermined illumination intensity B2, and B2=1.2B0;

[0110] If K>K4, the predetermined illumination intensity is determined as the third predetermined illumination intensity B3, and B3=1.1B0;

[0111] Wherein, B0 is the initial predetermined light intensity, K3=0.4K0, K4=0.6K0.

[0112] So far, the technical solutions of the present invention have been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it is easy for those skilled in the art to understand that the protection scope of the present invention is obviously not limited to these specific embodiments. Without departing from the principle of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present invention.

[0113] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A photovoltaic silicon wafer mask lithography system, characterized in that: include: An irradiation module, which is used to irradiate the resin on the silicon wafer through a mask to form an insoluble photosensitive resin, and the mask is pre-defined with an etching pattern; A feature acquisition module, which is used to obtain the mask image information of the mask plate and the infrared image of the irradiated silicon wafer respectively; A feature analysis module, which is connected to the feature acquisition module, is used to obtain the etching texture density features in each etching sub-region in the mask image information, and calculate the etching texture characterization parameters in combination with the etching depth, wherein the etching texture density features include the texture difference amount and the mean value of the texture quantity; A control module is used to classify the complex difference categories of silicon wafers according to the etching pattern characterization parameters, and control the irradiation module according to the complex difference categories. include, Controlling the irradiation module to irradiate each etched sub-region at a predetermined light intensity increase rate, acquiring the infrared image of the feature acquisition module to determine the temperature difference of each etched sub-region, and determining whether to correct the light intensity increase rate according to the temperature difference; or continuously irradiating the resin at a predetermined light intensity; The feature analysis module is used to obtain the dense features of etching lines in each etching sub-region in the mask image information, including: To determine the etching patterns of each etching sub-region in the mask image information; The variance of the number of etching lines in each etching sub-region is used to calculate the variance of the number of etching lines in each etching sub-region as the texture difference amount; The average value of the number of etching lines in each etching sub-region is used as the average value of the number of lines; The feature analysis module calculates the etching pattern characterization parameters according to formula (1): In formula (1), W represents the etching texture characterization parameter, D represents the texture difference, N represents the mean value of the texture number, T represents the etching depth, α represents the difference weight coefficient, β represents the mean weight coefficient, γ represents the depth weight coefficient, D0 represents the average value of the texture difference of each historical mask, N0 represents the average value of the mean value of the texture number of each historical mask, and T0 represents the average value of the etching depth of each historical mask.

2. The photovoltaic silicon wafer mask lithography system according to claim 1, characterized in that: The control module divides the complex difference categories of the silicon wafer based on the etching line characterization parameters, including: If the etching texture characterization parameter is greater than the preset etching texture characterization parameter, the single silicon wafer is classified as a strong complex category; If the etching texture characterization parameter is less than or equal to the preset etching texture characterization parameter, the single silicon wafer is classified into a weakly complex category.

3. The photovoltaic silicon wafer mask lithography system according to claim 2, characterized in that: The control module controls the irradiation module to irradiate the resin on the silicon wafer based on the complex difference category of the silicon wafer, including: If the complexity difference category of the silicon wafer is a strong complexity category, determining a predetermined light intensity increase rate based on the etching texture characterization parameters; If the complexity difference category of the silicon wafer is a weak complexity category, the resin is continuously irradiated at a predetermined temperature.

4. The photovoltaic silicon wafer mask lithography system according to claim 3, characterized in that: The control module determines a predetermined light intensity increase rate based on the etching line characterization parameters, wherein: The predetermined light intensity increase rate determined by the control module is inversely proportional to the etching line characterization parameter.

5. The photovoltaic silicon wafer mask lithography system according to claim 4, characterized in that: The control module determines whether to make correction for the predetermined light intensity increase rate based on the temperature difference, including: If the temperature difference is less than or equal to the preset temperature difference, the silicon wafer with the same mask is continuously irradiated using the current predetermined light intensity increase rate; If the temperature difference is greater than a preset temperature difference, the predetermined light intensity increase rate is corrected based on the temperature difference.

6. The photovoltaic silicon wafer mask lithography system according to claim 5, characterized in that: The control module is used to obtain the infrared image of the feature acquisition module to determine the temperature difference of each etching sub-area, including: It is used to mark a number of calibration points on the infrared image and determine the temperature corresponding to each calibration point; Used to calculate the variance of each temperature and obtain the temperature difference.

7. The photovoltaic silicon wafer mask lithography system according to claim 6, characterized in that: The control module modifies the predetermined light intensity increase rate based on the temperature difference, including: The magnitude of the correction to the predetermined rate of increase of light intensity is positively correlated with the amount of temperature difference.

8. The photovoltaic silicon wafer mask lithography system according to claim 7, characterized in that: The control module determines the predetermined light intensity based on the etching line characterization parameters, wherein: The etching pattern characterization parameters are inversely proportional to the predetermined light intensity.

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