Nozzle structure, deposition equipment and cleaning method for deposition process

Abstract

The present invention discloses an upper nozzle structure, deposition equipment and cleaning method for a deposition process. The upper nozzle structure includes: an upper nozzle body, which is arranged in the upper cover plate of the reaction chamber, and there is a gap between the first end of the upper nozzle body and the upper cover plate for passing the cleaning gas downward; and a gas guide component, which is arranged inside the upper nozzle body, including a first main channel and at least one group of branch channels, the first end of the first main channel is connected to the outside of the upper cover plate to obtain protective gas, the second end of the first main channel is connected to the input end of the first group of branch channels, and the output end of the first group of branch channels is located on the upper surface of the upper nozzle body, for passing the protective gas before the cleaning gas is passed in, so that the protective gas covers the upper surface of the upper nozzle body, and isolating the upper surface from the cleaning gas. The present invention can isolate the cleaning gas from contacting the upper surface of the upper nozzle, thereby preventing the upper nozzle from being corroded and damaged by fluorine ions in the cleaning gas.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and in particular to an upper nozzle structure for a deposition process, a deposition device, a cleaning method, and a computer-readable storage medium. Background Art

[0002] In the semiconductor industry, fluorine chemicals and materials, due to their unique properties, are key components in this field, serving as fluorine solvents, cleaning agents, thermal fluids, etching materials, and photosensitive materials. Fluorine-containing cleaning gases are also commonly used to clean deposition equipment after the deposition reaction.

[0003] Currently, to improve the cleaning efficiency of deposition equipment, the amount of clean gas introduced is generally increased. However, the fluorine ions in the clean gas are corrosive, and the cleaning process typically maintains a high-temperature clean environment. This makes the upper nozzle in the deposition equipment susceptible to damage from the high-temperature fluorine ions in the clean gas, resulting in a decrease in the roughness of the upper surface (back surface) of the upper nozzle. Furthermore, the decrease in the roughness of the upper nozzle surface will also affect the particle size of the subsequently deposited film, which can easily lead to an abnormal increase in particles (PA) on the film.

[0004] In order to solve the above-mentioned problems existing in the prior art, the art urgently needs an improved upper nozzle structure that can isolate the cleaning gas from contacting the upper surface of the upper nozzle, thereby preventing the upper nozzle from being corroded and damaged by fluoride ions in the cleaning gas during the cleaning process of the deposition equipment, resulting in the problem of deterioration of the roughness of the upper surface of the upper nozzle. Summary of the Invention

[0005] The following is a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceivable aspects and is neither intended to identify key or critical elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that will be provided later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides an upper nozzle structure for a deposition process, a deposition device, a cleaning method, and a computer-readable storage medium, which can isolate the cleaning gas from contacting the upper surface of the upper nozzle, thereby avoiding the problem that the upper nozzle of the deposition device is corroded and damaged by fluorine ions in the cleaning gas during the cleaning process, resulting in poor roughness of the upper surface of the upper nozzle.

[0007] Specifically, the upper nozzle structure for the deposition process provided according to the first aspect of the present invention includes: an upper nozzle body, which is arranged in the upper cover plate of the reaction chamber, wherein there is a gap between the first end of the upper nozzle body and the upper cover plate for passing the cleaning gas downward; and a gas guide component, which is arranged inside the upper nozzle body, including a first main channel and at least one group of branch channels, the first end of the first main channel is connected to the outside of the upper cover plate to obtain protective gas, the second end of the first main channel is connected to the input end of the first group of branch channels, and the output end of the first group of branch channels is located on the upper surface of the upper nozzle body, for passing the protective gas before the cleaning gas is passed in, so that the protective gas covers the upper surface of the upper nozzle body, so as to isolate the upper surface from the cleaning gas.

[0008] Furthermore, in some embodiments of the present invention, the air guide assembly also includes a second group of branch channels, the input end of the second group of branch channels is connected to the first main channel, and the output end of the second group of branch channels is located at the upper end of the upper surface of the upper nozzle body.

[0009] Furthermore, in some embodiments of the present invention, the pipe diameters of the first group of branch channels and / or the second group of branch channels gradually increase near their corresponding output ends.

[0010] Furthermore, in some embodiments of the present invention, the position of the input end of the first group of branch channels and / or the second group of branch channels is higher than the position of the corresponding output end, so that the protective gas in the first group of branch channels or the second group of branch channels flows downward.

[0011] Furthermore, in some embodiments of the present invention, the multiple groups of branch output ends in the first group of branch channels are evenly distributed in a ring shape on the upper surface of the upper nozzle body, and / or the multiple groups of branch output ends in the second group of branch channels are evenly distributed in a ring shape on the upper end of the upper surface of the upper nozzle body.

[0012] Furthermore, in some embodiments of the present invention, the gas guide assembly also includes a second main channel and a third group of branch channels, the first end of the second main channel is connected to the outside of the upper cover plate to obtain reaction gas, the second end of the second main channel is connected to the input end of the third group of branch channels, and the output end of the third group of branch channels is located at the bottom of the upper nozzle body.

[0013] Furthermore, in some embodiments of the present invention, the bottom of the upper nozzle body includes a lower surface and / or a side surface of the upper nozzle body.

[0014] Furthermore, in some embodiments of the present invention, the first main channel is arranged on the outer ring of the second main channel, and an isolation layer is provided between the first main channel and the second main channel.

[0015] In addition, the above-mentioned deposition equipment provided according to the second aspect of the present invention includes: a reaction chamber for performing a deposition process; and an upper cover plate covering the reaction chamber, including the above-mentioned upper nozzle structure for the deposition process provided by the first aspect of the present invention, which is used to provide process gas to the reaction chamber below it, wherein the process gas includes a cleaning gas, a protective gas and / or a reaction gas.

[0016] In addition, according to the above-mentioned cleaning method provided by the third aspect of the present invention, a cleaning process is performed using the above-mentioned deposition equipment provided by the second aspect of the present invention, and the cleaning method includes the following steps: providing a protective gas to the upper surface of the upper nozzle body through the first main channel and at least one group of branch channels in the upper nozzle structure, so that the protective gas covers the upper surface; and in response to the protective gas completely covering the upper surface, a cleaning gas is passed downward through the gap between the first end of the upper nozzle body and the upper cover plate to clean the reaction chamber below it.

[0017] In addition, according to a fourth aspect of the present invention, there is also provided a computer-readable storage medium having computer instructions stored thereon, wherein when the computer instructions are executed by a processor, the cleaning method provided in the third aspect of the present invention is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above features and advantages of the present invention will be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

[0019] Figure 1 A schematic structural diagram of a deposition device provided according to some embodiments of the present invention is shown;

[0020] Figure 2 shows a cross-sectional view of an upper nozzle structure for a deposition process provided according to some embodiments of the present invention;

[0021] Figure 3 for Figure 2 The external structure diagram of the upper nozzle structure shown;

[0022] Figure 4 shows a cross-sectional view of an upper nozzle structure for a deposition process provided according to some other embodiments of the present invention;

[0023] Figure 5 for Figure 4 A schematic diagram of the external structure of the upper nozzle structure shown; and

[0024] Figure 6 A flow chart of a cleaning method provided according to some embodiments of the present invention is shown.

[0025] Reference numerals:

[0026] 100 deposition equipment;

[0027] 110 reaction chamber;

[0028] 120 upper cover;

[0029] 200 upper nozzle structure;

[0030] 210 upper nozzle body;

[0031] 211 upper surface;

[0032] 220 First Main Channel;

[0033] 221 The first set of branch channels;

[0034] 222 The second set of branch channels;

[0035] 230 Second Main Channel;

[0036] 231 The third group of branch channels;

[0037] d gap; and

[0038] Steps S610 to S3620. DETAILED DESCRIPTION

[0039] The following specific embodiments illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will contain many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0040] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0041] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0042] It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, regions, layers, and / or portions. Thus, a first component, region, layer, and / or portion discussed below may be referred to as a second component, region, layer, and / or portion without departing from some embodiments of the present invention.

[0043] As mentioned above, currently, in order to improve the cleaning efficiency of the deposition equipment, the amount of cleaning gas introduced is generally increased. However, the fluorine ions in the cleaning gas are corrosive, and the cleaning process usually maintains a high-temperature clean environment. This makes the upper nozzle in the deposition equipment easily damaged by the high-temperature fluorine ions in the clean gas, resulting in a deterioration in the roughness of the upper surface (back) of the upper nozzle. Furthermore, the deterioration in the roughness of the upper nozzle surface will also affect the particle size of the subsequently deposited film, which can easily lead to an abnormal increase in particles (PA) on the film.

[0044] In order to solve the above-mentioned problems existing in the prior art, the present invention provides an upper nozzle structure for a deposition process, a deposition device, a cleaning method, and a computer-readable storage medium, which can isolate the cleaning gas from contacting the upper surface of the upper nozzle, thereby avoiding the problem that the upper nozzle of the deposition device is corroded and damaged by fluoride ions in the cleaning gas during the cleaning process, resulting in poor roughness of the upper surface of the upper nozzle.

[0045] In some non-limiting embodiments, the upper nozzle structure for the deposition process provided by the first aspect of the present invention can be configured in the deposition apparatus provided by the second aspect of the present invention. Furthermore, the cleaning method provided by the third aspect of the present invention can also be implemented by the deposition apparatus provided by the second aspect of the present invention.

[0046] Specifically, in some non-limiting embodiments, the fourth aspect of the present invention provides a computer-readable storage medium on which computer instructions may be stored. When the computer instructions are executed by a processor, the cleaning method provided in the third aspect of the present invention may be implemented.

[0047] The working principle of the above-mentioned deposition equipment will be described below in conjunction with some embodiments of the upper nozzle structure and cleaning method for the deposition process. Those skilled in the art will understand that these embodiments of the upper nozzle structure and cleaning method for the deposition process are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all working modes or all functions of the deposition equipment. Similarly, the deposition equipment is also only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the configuration subject of these upper nozzle structures for the deposition process, nor does it constitute a limitation on the implementation subject of each step in these cleaning methods.

[0048] Please see Figure 1 , Figure 1 A schematic structural diagram of a deposition device provided according to some embodiments of the present invention is shown.

[0049] like Figure 1 As shown, in some embodiments of the present invention, a deposition apparatus 100 may include: a reaction chamber 110 for performing a deposition process; and an upper cover plate 120 covering the reaction chamber 110. The upper cover plate 120 may include an upper nozzle structure 200 for the deposition process. The upper nozzle structure 200 may be used to supply process gases to the reaction chamber 110 below it, wherein the process gases may specifically include cleaning gases, protective gases, and / or reactive gases.

[0050] Further, see Figure 1 As shown in the partially enlarged view I in FIG1 , the upper nozzle structure 200 for the deposition process may include an upper nozzle body 210. The upper nozzle body 210 may be disposed in the upper cover plate 120 of the reaction chamber 110. A gap d may be provided between the first end of the upper nozzle body 210 and the upper cover plate 120 for downwardly passing a cleaning gas (the direction of the cleaning gas flow may be indicated by the downward thick arrow in the partially enlarged view I). The cleaning gas may be a gas containing fluoride ions, such as nitrogen trifluoride (NF3) and argon.

[0051] Specifically, see Figure 2 , Figure 2 A cross-sectional view of an upper nozzle structure for a deposition process provided according to some embodiments of the present invention is shown.

[0052] like Figure 2 As shown, in some embodiments, the gas guide component of the upper nozzle structure 200 can be arranged inside the upper nozzle body 210, and can include a first main channel 220 and at least one group of branch channels. The first end of the first main channel 220 can be connected to the outside of the upper cover plate 120 to obtain protective gas. Optionally, the protective gas can be an inert gas, such as nitrogen. The second end of the first main channel 220 can be connected to the input end of the first group of branch channels 221. The output end of the first group of branch channels 221 can be located on the upper surface 211 of the upper nozzle body 210, so as to introduce protective gas before the cleaning gas is introduced (the airflow direction of the protective gas can be as shown in FIG. Figure 2 As shown by the thick arrow in FIG), the protective gas can cover the upper surface 211 of the upper nozzle body 210 to isolate the upper surface 211 of the upper nozzle body 210 from the cleaning gas.

[0053] For details, please refer to Figure 3 , Figure 3 for Figure 2 The external structure diagram of the upper nozzle structure is shown in FIG. Figure 3 As shown, outside the upper nozzle structure 200, the output ends of the multiple groups of branches within the first group of branch channels 221 can be evenly distributed in an annular manner on the upper surface 211 of the upper nozzle body 210. Therefore, the protective gas output from the output ends of the first group of branch channels 221 can spread over the upper surface 211 of the upper nozzle body 210, thereby completely covering the upper surface 211 of the upper nozzle body 210. It can be understood that this is equivalent to forming a protective gas film on the upper surface 211 of the upper nozzle body 210, thereby isolating the upper surface 211 of the upper nozzle body 210 from the fluorine-containing cleaning gas (e.g., NF3) that is subsequently introduced through the gap d between the first end of the upper nozzle body 210 and the upper cover plate 120.

[0054] Further, see Figure 4 , Figure 4 A cross-sectional view of an upper nozzle structure for a deposition process provided according to some other embodiments of the present invention is shown.

[0055] like Figure 4As shown, in some preferred implementations, the gas guide assembly in the upper nozzle structure 200 may further include a second set of branch channels 222. The input end of the second set of branch channels 222 may also be connected to the first main channel 220, that is, the shielding gas is obtained by connecting to the first main channel 220 outside the upper cover plate 120. In addition, the output end of the second set of branch channels 222 may be located at the upper end of the upper surface 211 of the upper nozzle body 210, so as to first introduce the shielding gas before the cleaning gas is introduced (the direction of the shielding gas flow may be as shown in FIG. Figure 4 As shown by the thick arrow in the figure), the protective gas can be output from the upper end of the upper surface 211, thereby covering the upper surface 211 of the upper nozzle body 210, so as to further isolate the upper surface 211 of the upper nozzle body 210 from the cleaning gas.

[0056] For details, please refer to Figure 5 , Figure 5 for Figure 4 The external structure diagram of the upper nozzle structure is shown in FIG. Figure 5 As shown, outside the upper nozzle structure 200, the output ends of the multiple branches within the first group of branch channels 221 can be evenly distributed in a circular pattern on the upper surface 211 of the upper nozzle body 210, and the output ends of the multiple branches within the second group of branch channels 222 can be evenly distributed in a circular pattern on the upper end of the upper surface 211 of the upper nozzle body 210. Therefore, the protective gas output from the output ends of the first group of branch channels 221 and the second group of branch channels 222 can spread over the upper surface 211 of the upper nozzle body 210, completely covering the upper surface 211 of the upper nozzle body 210. This effectively forms a protective gas film on the upper surface 211 of the upper nozzle body 210, thereby isolating the upper surface 211 of the upper nozzle body 210 from the fluorine-containing cleaning gas (e.g., NF3) that is subsequently introduced through the gap d between the first end of the upper nozzle body 210 and the upper cover plate 120.

[0057] Those skilled in the art will understand that the above Figure 4 The illustrated embodiment of connecting the input ends of the second set of branch channels 222 to the first main channel 220 is merely a non-limiting embodiment of the present invention, intended to clearly illustrate the main concepts of the present invention and provide a specific solution that is convenient for public implementation, and is not intended to limit the scope of protection of the present invention. Alternatively, in other embodiments, those skilled in the art may also adopt other equivalent methods based on the concepts of the present invention, for example, providing an independent main channel for the second set of branch channels 222 to deliver protective gas, to achieve the same technical effect.

[0058] Optionally, the shapes of the output ports of the first group of branch channels 221 and the second group of branch channels 222 on the upper surface 211 of the upper nozzle body 210 are not limited. They can be traditional circular output ports, or they can be longitudinal elongated elliptical output ports, etc., based on the special shape of the upper nozzle structure 200, combined with the special position of the output port and the gas output volume.

[0059] Further, if Figure 2 and Figure 4 As shown, in some preferred embodiments, in the upper nozzle structure 200, the positions of the input ends of the first group of branch channels 221 and the second group of branch channels 222 can be higher than the positions of their corresponding output ends, so that the protective gas in the first group of branch channels 221 or the second group of branch channels 222 can flow downward, which is conducive to the rapid and smooth outflow of the protective gas.

[0060] Optionally, the pipe diameters of the first group of branch channels 221 and / or the second group of branch channels 222 in the upper nozzle structure 200 can gradually increase near their corresponding output ends (not shown in the drawings), thereby further facilitating the protective gas to flow quickly to the upper surface 211 of the upper nozzle body 210 and cover the upper surface 211.

[0061] Please continue to return Figure 2 ,like Figure 2 As shown, in some embodiments of the present invention, the gas guide assembly in the upper nozzle structure 200 may further include a second main channel 230 and a third set of branch channels 231. The first end of the second main channel 230 may also be connected to the exterior of the upper cover plate 120 to obtain reaction gas. Optionally, the reaction gas may be silane and argon. The second end of the second main channel 230 may be connected to the input end of the third set of branch channels 231. The output end of the third set of branch channels 231 may be located at the bottom of the upper nozzle body 210 to provide reaction gas to the reaction chamber 110 below it.

[0062] In some optional embodiments, the bottom of the upper nozzle body 210 may specifically include the lower surface and / or side surfaces of the upper nozzle body 210. Figure 2 As shown, the reaction gas obtained from the second main channel 230 can be output from the side of the upper nozzle body 210 through the third group of branch channels 231. Alternatively, the reaction gas obtained from the second main channel 230 can also be output directly from the bottom surface of the upper nozzle body 210 through the third group of branch channels 231.

[0063] Please continue to see Figure 2 and Figure 3In some embodiments, the first main channel 220 can be disposed on the outer periphery of the second main channel 230, thereby facilitating the provision of two gas supply main channels within the limited scope of the upper nozzle structure 200. An isolation layer 240 can be provided between the first main channel 220 and the second main channel 230 to prevent different types of gases from interfering with each other.

[0064] Compared to the prior art, the conventional upper nozzle structure may cause the fluorine-containing cleaning gas to reflux near the upper nozzle, causing further damage to the upper nozzle. The upper nozzle structure 200 shown in the present invention increases the protective gas passage and outputs the protective gas on the upper surface 211 of the upper nozzle body 210, thereby forming a protective gas layer on the upper surface 211, thereby avoiding the fluorine-containing cleaning gas reflux. Figure 1 As shown, since the protective gas forms a protective gas layer on the upper surface of the upper nozzle body 210, the cleaning gas flowing in from the gap d can also more easily contact the lower surface of the upper cover plate 120 and clean it.

[0065] Those skilled in the art will appreciate that the specific structures of the first main channel 220 and at least one group of branch channels, as well as the second main channel 230 and the third group of branch channels 231, disposed within the upper nozzle structure 200 are not limited to the schemes shown in the drawings and embodiments. The schemes shown in the drawings and embodiments are merely non-limiting implementations of the present invention, intended to clearly illustrate the main concepts of the present invention and to provide a specific solution that is convenient for the public to implement, rather than to limit the scope of protection of the present invention. Alternatively, in other embodiments, those skilled in the art may also adopt other internal channel structures based on the concepts of the present invention to achieve the same technical effects.

[0066] Next, see Figure 6 , Figure 6 A flow chart of a cleaning method provided according to some embodiments of the present invention is shown.

[0067] like Figure 6 As shown, in some embodiments of the present invention, a deposition device 100 can be used to perform a cleaning process, and the steps of the cleaning method may include S610: providing a protective gas to the upper surface of the upper nozzle body through a first main channel and at least one group of branch channels in the upper nozzle structure so that the protective gas covers the upper surface.

[0068] Specifically, combined Figure 1 and Figure 2As shown, after the deposition process is completed in the deposition apparatus 100, a protective gas can be preferentially provided to the upper surface of the upper nozzle body 210 through the first main channel 220 and the first group of branch channels 221 and / or the second group of branch channels 222 in the upper nozzle junction 210. The protective gas can flow out through the output ports of the first group of branch channels 221 and / or the second group of branch channels 222 located on the upper surface 211 and / or the upper end of the upper surface 211, covering the upper surface 211 of the upper nozzle body 210.

[0069] Continue as Figure 6 As shown, after completing step S610, step S620 can be performed: in response to the protective gas completely covering the upper surface, a cleaning gas is introduced downward through the gap between the first end of the upper nozzle body and the upper cover plate to clean the reaction chamber thereunder.

[0070] Specifically, combined Figure 1 and Figure 2 As shown, in some embodiments, the predetermined time for the shielding gas to be introduced can be used to determine whether the shielding gas has almost completely covered the upper surface 211. When the shielding gas completely covers the upper surface, a cleaning gas, such as nitrogen trifluoride and argon, can be introduced downward through the gap d between the first end of the upper nozzle body 210 and the upper cover plate 120 to clean the reaction chamber 110 thereunder.

[0071] In other optional embodiments of the present invention, in order to shorten the cleaning time, the protective gas and the cleaning gas can also be introduced almost at the same time, as long as the protective gas can reach the upper surface 211 of the upper nozzle body 210 in advance, form a protective gas layer on the surface of the upper surface 211, and isolate the cleaning gas from the upper surface 211.

[0072] And, as Figure 1 As shown, since the protective gas forms a protective gas layer on the upper surface of the upper nozzle body 210, the cleaning gas flowing in from the gap d can more easily contact the lower surface of the upper cover plate 120 and clean it, solving the problem of insufficient cleaning of the lower surface of the upper cover plate 120 by the cleaning gas in the prior art.

[0073] Although the above methods are illustrated and described as a series of acts for simplicity of explanation, it is to be understood and appreciated that these methods are not limited by the order of the acts, as some acts may occur in a different order and / or concurrently with other acts from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art according to one or more embodiments.

[0074] In summary, the present invention provides an upper nozzle structure for a deposition process, a deposition device, a cleaning method, and a computer-readable storage medium, which can isolate the cleaning gas from contacting the upper surface of the upper nozzle, thereby avoiding the problem that the upper nozzle of the deposition device is corroded and damaged by fluoride ions in the cleaning gas during the cleaning process, resulting in deterioration of the roughness of the upper surface of the upper nozzle.

[0075] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An upper nozzle structure for a deposition process, characterized in that: include: an upper nozzle body, disposed in the upper cover plate of the reaction chamber, wherein a gap exists between the first end of the upper nozzle body and the upper cover plate for allowing a cleaning gas to flow downward; as well as The gas guide assembly is arranged inside the upper nozzle body, including a first main channel and at least one group of branch channels. The first end of the first main channel is connected to the outside of the upper cover plate to obtain protective gas, the second end of the first main channel is connected to the input end of the first group of branch channels, and the output end of the first group of branch channels is located on the upper surface of the upper nozzle body, so as to introduce the protective gas before the cleaning gas is introduced, so that the protective gas covers the upper surface of the upper nozzle body, so as to isolate the upper surface from the cleaning gas.

2. The upper nozzle structure according to claim 1, characterized in that: The air guide assembly further includes a second group of branch channels, the input ends of the second group of branch channels are connected to the first main channel, and the output ends of the second group of branch channels are located at the upper end of the upper surface of the upper nozzle body.

3. The upper nozzle structure according to claim 2, characterized in that: The diameters of the pipes of the first group of branch channels and / or the second group of branch channels gradually increase near their corresponding output ends.

4. The upper nozzle structure according to claim 2, characterized in that: The input ends of the first group of branch channels and / or the second group of branch channels are located higher than the corresponding output ends, so that the protective gas in the first group of branch channels or the second group of branch channels flows downward.

5. The upper nozzle structure according to claim 2, characterized in that: The multiple groups of branch output ends in the first group of branch channels are evenly distributed in a ring shape on the upper surface of the upper nozzle body, and / or the multiple groups of branch output ends in the second group of branch channels are evenly distributed in a ring shape on the upper end of the upper surface of the upper nozzle body.

6. The upper nozzle structure according to claim 1, wherein: The gas guide assembly also includes a second main channel and a third group of branch channels, the first end of the second main channel is connected to the outside of the upper cover plate to obtain reaction gas, the second end of the second main channel is connected to the input end of the third group of branch channels, and the output end of the third group of branch channels is located at the bottom of the upper nozzle body.

7. The upper nozzle structure according to claim 6, characterized in that: The bottom of the upper nozzle body includes a lower surface and / or a side surface of the upper nozzle body.

8. The upper nozzle structure according to claim 6, wherein: The first main channel is arranged on the outer circle of the second main channel, and an isolation layer is provided between the first main channel and the second main channel.

9. A deposition device, characterized in that: include: a reaction chamber for performing a deposition process; as well as An upper cover plate, covering the reaction chamber, includes an upper nozzle structure for a deposition process as described in any one of claims 1 to 8, and is used to provide process gas to the reaction chamber below it, wherein the process gas includes a cleaning gas, a protective gas and / or a reaction gas.

10. A cleaning method, characterized in that: A cleaning process is performed using the deposition apparatus according to claim 9, wherein the cleaning method comprises the following steps: providing a shielding gas to an upper surface of the upper nozzle body through a first main channel and at least one set of branch channels in the upper nozzle structure, such that the shielding gas covers the upper surface; and In response to the protective gas completely covering the upper surface, a cleaning gas is introduced downward through the gap between the first end of the upper nozzle body and the upper cover plate to clean the reaction chamber thereunder.

11. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the cleaning method according to claim 10 is implemented.

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