Solar cell and method of manufacturing the same

Abstract

The application relates to a solar cell and a manufacturing method thereof. The manufacturing method of the solar cell comprises the following steps: providing a cell main body, the cell main body comprising a substrate, a passivation contact layer and a first passivation layer which are sequentially stacked, the first passivation layer being provided with a plurality of first patterned grooves for exposing the passivation contact layer, and the exposed area of the passivation contact layer being provided with a plurality of pores; forming a dielectric layer on the outer side surface of the first passivation layer away from the substrate, and filling the dielectric material of the dielectric layer into the first patterned grooves and the pores; and removing the dielectric material of the dielectric layer covering the outer side surface and the first patterned grooves, and forming a first electrode in the first patterned grooves. The solar cell and the manufacturing method thereof have good passivation performance and high efficiency.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic technology, and in particular to a solar cell and a method for manufacturing the same. Background Technology

[0002] Metallization is one of the key processes in solar cell fabrication. Among them, metallization using electroplating is increasingly widely used because it can meet the requirements of low-temperature processing, low material cost, and high-conductivity double-sided metal grids in solar cells. For the metallization of TOPCon solar cells, a combination of double-sided laser contact opening (LCO) and metal plating is typically used to fabricate high-conductivity grid lines with low contact resistance on the front and back sides of the TOPCon solar cell. Specifically, a laser is used to create grooves in the passivation layer on the front and back sides of the TOPCon solar cell, and then electrodes are fabricated by electroplating. However, during the laser grooving process, the laser can easily damage the passivation contact layer, which leads to a deterioration in the passivation performance of the solar cell and ultimately results in lower solar cell efficiency. Summary of the Invention

[0003] Therefore, it is necessary to provide a solar cell with good passivation performance and high efficiency, and a method for manufacturing the same.

[0004] The first aspect of this application provides a method for manufacturing a solar cell, comprising:

[0005] A battery body is provided, the battery body includes a substrate, a passivation contact layer and a first passivation layer stacked in sequence, the first passivation layer has a plurality of first patterned grooves to expose the passivation contact layer, and the exposed area of ​​the passivation contact layer has a plurality of pores.

[0006] A dielectric layer is formed on the outer surface of the first passivation layer away from the substrate, and the dielectric material of the dielectric layer is filled into the first patterned slot and each pore;

[0007] The dielectric material covering the outer surface and the first patterned groove of the dielectric layer is removed, and the first electrode is formed in the first patterned groove.

[0008] In one embodiment, the step of removing the dielectric material covering the outer surface and the first patterned groove of the dielectric layer specifically includes:

[0009] The dielectric material covering the outer surface and the first patterned groove of the dielectric layer is completely removed, while at least part of the dielectric material in the pores of the dielectric layer is retained.

[0010] In one embodiment, the steps of removing the dielectric material covering the outer surface and the first patterned groove are as follows:

[0011] The dielectric material of the dielectric layer is removed by cleaning with an acidic solution. The dielectric material of the dielectric layer is configured to react with the acidic solution and be removed.

[0012] In one embodiment, the acidic solution is an HF acid solution, and the dielectric layer includes one or more of SiOx, SiNx, and MgF2.

[0013] In one embodiment, when the dielectric layer consists only of SiOx, the thickness of the dielectric layer is 10-20 nm;

[0014] When the dielectric layer consists only of SiNx and MgF2, the thickness of the dielectric layer is 2-5 nm.

[0015] In one embodiment, in the step of forming a dielectric layer on the outer surface of the first passivation layer away from the substrate, and further filling the first patterned slots and the pores with the dielectric material of the dielectric layer:

[0016] A dielectric layer is deposited on the outer surface using vapor deposition or physical vapor deposition, so that the dielectric layer completely covers the outer surface and fills the first patterned groove with dielectric material. Part of the dielectric material of the dielectric layer also fills the pore section away from the substrate.

[0017] In one embodiment, the step of providing a battery body specifically includes:

[0018] A passivation contact layer and a first passivation layer are sequentially formed on the first surface of the substrate;

[0019] A first patterned groove is formed on the first passivation layer using a laser to expose the passivation contact layer, and several pores are formed in the exposed area of ​​the passivation contact layer.

[0020] In one embodiment, the step of providing a battery body further includes:

[0021] A doped conductive layer and a second passivation layer are sequentially formed on the second surface of the substrate;

[0022] A second patterned groove is formed on the second passivation layer using a laser to expose the doped conductive layer;

[0023] Following the step of forming the first electrode in the first patterned groove, the method further includes:

[0024] The surface of the second passivation layer and the interior of the second patterned groove are treated with an acidic solution;

[0025] The second electrode is formed in the second patterned groove.

[0026] In one embodiment, the step of forming the first electrode in the first patterned groove specifically includes:

[0027] A first nickel layer, a first copper layer, and a first silver layer are sequentially formed in a first patterned groove to form a first electrode.

[0028] The second aspect of this application provides a solar cell, which is manufactured using the aforementioned method for manufacturing solar cells.

[0029] In one embodiment, the passivation contact layer includes a polysilicon-doped conductive layer with a thickness of 90 nm to 110 nm.

[0030] In one embodiment, each pore is filled with a medium material.

[0031] A third aspect of this application provides a solar cell, including a substrate and a tunneling oxide layer, a polycrystalline silicon doped conductive layer, and a first passivation layer sequentially stacked on a first surface of the substrate. The solar cell also includes a first electrode disposed on the first passivation layer, the first electrode being in ohmic contact with the polycrystalline silicon conductive layer; wherein the polycrystalline silicon conductive layer has a plurality of pores corresponding to the position of the first electrode, and each pore is filled with a dielectric material.

[0032] The beneficial effects of the above-mentioned solar cells and their manufacturing methods are as follows:

[0033] By forming a dielectric layer on the outer surface of the first passivation layer away from the substrate, and filling the first patterned trench and each pore with the dielectric material of the dielectric layer, the dielectric material in the pores is retained after the dielectric material covering the outer surface and the first patterned trench is removed. Compared with related technologies where the passivation contact layer has pores, and the tunneling oxide layer in the passivation contact layer may be corroded through the pores during the subsequent formation of the first electrode, in the subsequent process of forming the first electrode in the first patterned trench, the dielectric material seals and protects the pores, preventing the tunneling oxide layer from being corroded by the outside world. This ensures that the passivation performance of the passivation contact layer is not affected and reduced, thereby resulting in higher efficiency of the solar cell. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the structure of a solar cell provided in an embodiment of this application;

[0035] Figure 2 A schematic flowchart illustrating the method for manufacturing a solar cell according to an embodiment of this application;

[0036] Figure 3 This is a schematic diagram showing the formation of a doped conductive layer, a second passivation layer, a passivation contact layer, and a first passivation layer on a substrate in the method for fabricating a solar cell provided in this application embodiment.

[0037] Figure 4 A schematic diagram of the structure of the battery body formed in the method for manufacturing a solar cell provided in the embodiments of this application;

[0038] Figure 5 A schematic diagram illustrating the formation of a dielectric layer in a method for manufacturing a solar cell according to an embodiment of this application;

[0039] Figure 6 A schematic diagram illustrating the formation of a first electrode in a method for manufacturing a solar cell according to an embodiment of this application;

[0040] Explanation of icon numbers:

[0041] 100. Solar cell; 101. Cell body; 10. Substrate; 20. Passivation contact layer; 21. Tunneling oxide layer; 22. Polycrystalline silicon doped conductive layer; 30. First passivation layer; 31. First patterned groove; 32. Outer surface; 40. Pore; 50. First electrode; 51. First nickel layer; 52. First copper layer; 53. First silver layer; 60. Doped conductive layer; 70. Second passivation layer; 71. Anti-reflection layer; 72. Sub-passivation layer; 73. Second patterned groove; 80. Second electrode; 81. Second nickel layer; 82. Second copper layer; 83. Second silver layer; 90. Dielectric layer;

[0042] F, first surface; S, second surface. Detailed Implementation

[0043] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of the present invention. However, the present invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0044] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0045] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0046] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0047] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0048] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0049] The following description, in conjunction with the accompanying drawings, illustrates the solar cells and their fabrication methods according to embodiments of this application. It should be noted that this application uses a TOPCon solar cell as an example for explanation; the process is similar for other types of solar cells, and will not be repeated here.

[0050] Figure 1 This is a schematic diagram of the structure of a solar cell provided in an embodiment of this application.

[0051] Reference Figure 1The solar cell 100 provided in this application includes: a substrate 10, a passivation contact layer 20 and a first passivation layer 30 sequentially stacked on a first surface F of the substrate 10, and a doped conductive layer 60 and a second passivation layer 70 sequentially stacked on a second surface S of the substrate 10.

[0052] The doping types of the conductive layer 60 and the passivation contact layer 20 are opposite, and the first surface F and the second surface S are arranged opposite to each other.

[0053] The solar cell 100 also includes a first electrode 50 and a second electrode 80. The first electrode 50 is disposed on the first passivation layer 30 and is in ohmic contact with the polycrystalline silicon doped conductive layer 22 in the passivation contact layer 20. The second electrode 80 is disposed on the second passivation layer 70 and is in ohmic contact with the doped conductive layer 60.

[0054] When the solar cell 100 is a TOPCon cell, it can include N-type and P-type cells. In the N-type cell, the substrate 10 is doped with N-type elements, and the conductive layer 60 is doped with P-type elements. In the P-type cell, the substrate 10 is doped with P-type elements, and the conductive layer 60 is doped with N-type elements. The conductive layer 60 is used to form a PN junction with the substrate 10. In this embodiment, the substrate 10 is an N-type substrate, which can be P-type doped, for example, a boron-doped conductive layer 60 (also called a P+ emitter).

[0055] The second passivation layer 70 may include a sub-passivation layer 72 and an anti-reflection layer 71 sequentially stacked on the doped conductive layer 60.

[0056] The sub-passivation layer 72 can be a single-layer structure or a multi-layer structure, and the material can be at least one of alumina, silicon oxide, silicon nitride or silicon oxynitride.

[0057] The antireflection layer 71 is located on one side of the second surface S of the substrate 10, that is, on the side of the solar cell 100 that receives incident light (referred to as the front side or light-receiving surface), and plays an antireflection role on the front side of the solar cell 100. The antireflection layer 71 can adopt a multi-layer structure. In the multi-layer structure of the antireflection layer 71, the material of each layer can be silicon oxide, silicon nitride, or silicon oxynitride.

[0058] The passivation contact layer 20 includes a tunneling oxide layer 21 and a polysilicon-doped conductive layer 22 sequentially stacked on the first surface F of the substrate 10. The tunneling oxide layer 21 is used to achieve interface passivation of the first surface F of the substrate 10, thus achieving the effect of chemical passivation. The thickness of the polysilicon-doped conductive layer 22 is 90nm-110nm.

[0059] The polycrystalline silicon conductive layer 22 has a plurality of pores 40 at the position corresponding to the first electrode 50, and each pore 40 is filled with a dielectric material. Because the pores 40 in the polycrystalline silicon doped conductive layer 22 are blocked by the dielectric material, the tunneling oxide layer 21 is not affected. Therefore, the thickness of the polycrystalline silicon doped conductive layer 22 can be set to be thinner, reducing the absorption of light on the back side of the solar cell 100, increasing the short-circuit current and improving the efficiency of the solar cell 100.

[0060] The first passivation layer 30 is stacked on the surface of the passivation contact layer 20 facing away from the substrate 10. The first passivation layer 30 can also adopt a single-layer or multi-layer structure, and the material of the first passivation layer 30 can be silicon oxide, silicon nitride, or silicon oxynitride. It can reduce the reflectivity of sunlight on the second surface S side of the solar cell 100 and improve the absorption rate of sunlight. The first passivation layer 30 simultaneously plays the roles of passivation and anti-reflection.

[0061] The first electrode 50 may include a first nickel layer 51, a first copper layer 52, and a first silver layer 53 sequentially stacked on the polysilicon doped conductive layer 22. The second electrode 80 may include a second nickel layer 81, a second copper layer 82, and a second silver layer 83 sequentially stacked on the doped conductive layer 60.

[0062] In this embodiment, reference continues to be made to... Figure 1 The first passivation layer 30 has a plurality of first patterned grooves 31 to expose the passivation contact layer 20. The exposed area of ​​the passivation contact layer 20 has a plurality of pores 40, and each pore 40 is filled with a dielectric material.

[0063] In contrast to related technologies where the passivation contact layer has pores that could potentially corrode the tunneling oxide layer during the formation of the first electrode, in this embodiment, the dielectric material seals and protects the pores 40 during the process of forming the first electrode 50 in the first patterned groove 31. This prevents the tunneling oxide layer 21 from being corroded by external forces, ensuring that the passivation performance of the passivation contact layer 20 is not affected and thus results in higher efficiency for the solar cell 100.

[0064] The dielectric material here may include one or more of SiOx, SiNx and MgF2.

[0065] Similarly, a plurality of second patterned grooves 73 are formed on the second passivation layer 70, and the second electrode is formed in the second patterned grooves 73.

[0066] It should be noted that the solar cell 100 in the above embodiments can be manufactured using the solar cell manufacturing method described below.

[0067] Figure 2This is a schematic flowchart illustrating the method for manufacturing a solar cell according to an embodiment of this application.

[0068] Reference Figure 2 This application also provides a method for manufacturing a solar cell, which includes the following steps:

[0069] S10. A battery body is provided, the battery body including a substrate, a passivation contact layer and a first passivation layer stacked in sequence, the first passivation layer having a plurality of first patterned grooves to expose the passivation contact layer, and the exposed area of ​​the passivation contact layer having a plurality of pores.

[0070] S20. A dielectric layer is formed on the outer surface of the first passivation layer away from the substrate, and the dielectric material of the dielectric layer is filled into the first patterned slots and each pore.

[0071] S30, Remove the dielectric material covering the outer surface and the first patterned groove of the dielectric layer, and form a first electrode in the first patterned groove.

[0072] By forming a dielectric layer 90 on the outer surface 32 of the first passivation layer 30 away from the substrate 10, and filling the first patterned trench 31 and each pore 40 with the dielectric material of the dielectric layer 90, the dielectric material in the pores 40 is retained after the dielectric material covering the outer surface 32 and the first patterned trench 31 of the dielectric layer 90 is removed. Compared with the related technology, where the passivation contact layer has pores, and the tunneling oxide layer in the passivation contact layer may be corroded and damaged through the pores during the subsequent formation of the first electrode, in this embodiment, the dielectric material seals and protects the pores 40 during the subsequent process of forming the first electrode 50 in the first patterned trench 31, preventing the tunneling oxide layer 21 from being corroded by the outside, so that the passivation performance of the passivation contact layer 20 is not affected and reduced, thereby making the solar cell 100 more efficient.

[0073] In this embodiment of the application, step S30, which involves removing the dielectric material covering the outer surface 32 and the first patterned groove 31 of the dielectric layer 90, specifically includes:

[0074] The dielectric material covering the outer surface 32 and the first patterned groove 31 of the dielectric layer 90 is completely removed, while at least part of the dielectric material in the pores 40 of the dielectric layer is retained.

[0075] During the process of removing the medium material covering the outer surface 32 and the first patterned groove 31 of the medium layer 90, it is possible that some of the medium material in the pores 40 will also be removed, or the medium material in the pores 40 will not be affected during the process. As long as the medium material remains in each pore 40 after the removal process is completed, it is acceptable.

[0076] Further, in step S30, during the step of removing the dielectric material covering the outer surface 32 and the first patterned groove 31 of the dielectric layer 90:

[0077] The dielectric material of the dielectric layer 90 is removed by cleaning with an acidic solution. The dielectric material of the dielectric layer 90 is configured to react with the acidic solution and be removed.

[0078] With this configuration, during cleaning with an acidic solution, the dielectric material covering the outer surface 32 and the first patterned groove 31 of the dielectric layer 90 is removed by the acidic solution. After this portion of the dielectric material is removed, the dielectric material in the pores 40 can be retained as long as cleaning is stopped. Here, the cleaning with the acidic solution can be regarded as a pretreatment before the subsequent fabrication of the first electrode.

[0079] In this embodiment, the acidic solution can be an HF acid solution, and the dielectric layer includes one or more of SiOx, SiNx, and MgF2.

[0080] Specifically, when the dielectric layer consists only of SiOx, its thickness is 10-20 nm; when the dielectric layer consists only of SiNx and MgF2, its thickness is 2-5 nm. Since SiNx and MgF2 are highly resistant to acid corrosion, their thicknesses are set relatively thin.

[0081] In this embodiment of the application, the step of retaining at least a portion of the dielectric material in the pores 40 of the dielectric layer 90 specifically includes:

[0082] The dielectric material in the pores 40 on the side opposite to the substrate 10 is locally removed by cleaning with an acidic solution. Of course, this applies when the acidic solution also partially corrodes the pores 40 during the process of removing the dielectric material covering the outer surface 32 and the first patterned groove 31 of the dielectric layer 90.

[0083] In this embodiment of the application, in step S20, a dielectric layer 90 is formed on the outer surface of the first passivation layer 30 away from the substrate 10, and the dielectric material of the dielectric layer 90 is filled into the first patterned groove 31 and each hole 40:

[0084] A dielectric layer 90 is deposited on the outer surface 32 using vapor deposition or physical vapor deposition, so that the dielectric layer 90 completely covers the outer surface 32, and the dielectric material of the dielectric layer 90 fills the first patterned groove 31. Part of the dielectric material of the dielectric layer 90 also fills the part of the pore section of the pore 40 that is away from the substrate 10.

[0085] In practice, the dielectric layer can fill all the pores 40, or it can fill only the pore sections of the pores 40 that are away from the substrate 10. In practice, it is sufficient to fill the side of the pores 40 that is away from the substrate 10.

[0086] In this embodiment of the application, step S10, which involves providing a battery body 101, specifically includes:

[0087] A passivation contact layer 20 and a first passivation layer 30 are sequentially formed on the first surface F of the substrate 10.

[0088] A first patterned groove 31 is formed on the first passivation layer 30 using a laser to expose the passivation contact layer 20, and a plurality of pores 40 are formed in the exposed area of ​​the passivation contact layer 20.

[0089] In practice, a picosecond ultraviolet laser can be used to create grooves in the first passivation layer 30. Here, the first patterned groove 31 is formed in the region on the first passivation layer 30 corresponding to the first electrode 50.

[0090] In this embodiment of the application, the step of providing a battery body 101 further includes forming a doped conductive layer 60 and a second passivation layer 70 sequentially on the second surface S of the substrate 10.

[0091] A second patterned groove 73 is formed on the second passivation layer 70 using a laser to expose the doped conductive layer 60.

[0092] Following the step of forming the first electrode 50 in the first patterned groove 31, the method further includes:

[0093] The surface of the second passivation layer 70 and the interior of the second patterned groove 73 are treated with an acidic solution.

[0094] The second electrode 80 is formed in the second patterned groove 73.

[0095] Thus, after the first electrode 50 is formed, the second electrode 80 can be formed on the second surface S side of the substrate 10 of the solar cell 100.

[0096] In this embodiment of the application, the step of forming the first electrode 50 in the first patterned groove 31 specifically includes:

[0097] A first nickel layer 51, a first copper layer 52, and a first silver layer 53 are sequentially formed in the first patterned groove 31 to form the first electrode 50.

[0098] In practice, under photo-induced conditions, a nickel layer, a copper layer, and a silver plating layer can be plated in the first patterned groove 31.

[0099] The following, with reference to the accompanying drawings, provides a specific example illustrating a method for manufacturing a solar cell according to an embodiment of this application. The method includes:

[0100] Step 1, refer to Figure 3 A doped conductive layer 60 is formed on the second surface S of the substrate 10, and a passivation contact layer 20 is formed on the first surface F of the substrate 10. Then, a second passivation layer 70 and a first passivation layer 30 are formed on the doped conductive layer 60 and the passivation contact layer 20, respectively, forming a structure as shown in the diagram. Figure 3 The structure shown. Of course, the formation steps can also be to sequentially form a doped conductive layer 60 and a second passivation layer 70 on the second surface S of the substrate 10, and sequentially form a passivation contact layer 20 and a first passivation layer 30 on the first surface F of the substrate 10.

[0101] Here, the antireflection layer 71 in the second passivation layer 70 can be silicon nitride, etc., and the sub-passivation layer 72 can be aluminum oxide. The substrate 10 is an N-type substrate, the doped conductive layer 60 can be P-type doped, and the polysilicon doped conductive layer 22 in the passivation contact layer 20 can be N-type doped.

[0102] Step Two, Refer to Figure 4 A localized area of ​​the first passivation layer 30 is removed using an ultraviolet picosecond laser, forming a first patterned trench 31 on the first passivation layer 30. A portion of the polysilicon-doped conductive layer 22 is exposed through the first patterned trench 31. During the laser treatment, pores 40 are formed in the exposed area of ​​the polysilicon-doped conductive layer 22, and these pores 40 can penetrate the polysilicon-doped conductive layer 22. A localized area of ​​the second passivation layer 70 is then removed using an ultraviolet picosecond laser, forming a second patterned trench 73 on the second passivation layer 70. Figure 4 The battery body 101 shown.

[0103] Step 3, refer to Figure 5 A dielectric layer 90 is deposited on the outer surface 32 of the first passivation layer 30 using a vacuum evaporation or PVD equipment. The dielectric layer 90 may include one or more of SiOx, SiNx, and MgF2. When SiOx is used as the dielectric layer 90, its thickness is 10-20 nm; when SiNx or MgF2 is used, the thickness is 2-5 nm. A portion of the dielectric material from the dielectric layer 90 fills the first patterned trench 31 and each pore 40. The pores on the side of the pores facing away from the substrate 10 are sealed.

[0104] Step 4, Refer to Figure 6 Before forming the first electrode 50, a pretreatment process is performed. A solution containing HF acid is used to remove the dielectric material from the dielectric layer 90 deposited in step three, which covers the first passivation layer 30 and the first patterned trench 31. Some of the dielectric material in the pores 40 can be removed, but some remains, thus sealing the pores 40 and preventing HF from passing through. This ensures that the tunneling oxide layer 21 does not come into contact with HF during the pretreatment process, thereby achieving a protective effect. Then, under photoinduced conditions, after depositing the first nickel layer 51 and the first copper layer 52 in the first patterned trench 31, a silver layer is deposited as the first silver layer 53. The concentration of HF acid in the pretreatment is 1%-1.5%.

[0105] Step 5: Form a second nickel layer 81, a second copper layer 82, and a second silver layer 83 in the second patterned groove 73, ultimately forming a structure as shown in the figure. Figure 1 The solar cell 100 shown.

[0106] The solar cell 100 manufactured using the above method has a short processing time, is simple to operate, and has low cost. Even if the thickness of the polycrystalline silicon doped conductive layer 22 is reduced to 90nm and electroplating is performed, the efficiency of the solar cell 100 will not be affected.

[0107] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0108] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A method for manufacturing a solar cell, characterized in that, include: A battery body is provided, the battery body comprising a substrate, a passivation contact layer and a first passivation layer stacked sequentially, the passivation contact layer comprising a tunneling oxide layer and a polysilicon doped conductive layer stacked sequentially on the substrate; the first passivation layer has a plurality of first patterned grooves to expose the passivation contact layer, and the polysilicon doped conductive layer in the exposed area of ​​the passivation contact layer has a plurality of pores. A dielectric layer is formed on the outer surface of the first passivation layer away from the substrate, and the dielectric material of the dielectric layer is filled into the first patterned slot and each of the pores; The dielectric material covering the outer surface and the first patterned groove of the dielectric layer is removed, and a first electrode is formed in the first patterned groove; The step of removing the dielectric material covering the outer surface and the first patterned groove of the dielectric layer specifically includes: The dielectric material covering the outer surface and the first patterned groove of the dielectric layer is completely removed, while at least a portion of the dielectric material in the pores of the dielectric layer is retained.

2. The method for manufacturing a solar cell according to claim 1, characterized in that, In the step of removing the dielectric material covering the outer surface and the first patterned groove: The dielectric material of the dielectric layer is removed by cleaning with an acidic solution, the dielectric material of the dielectric layer being configured to react with the acidic solution and be removed.

3. The method for manufacturing a solar cell according to claim 2, characterized in that, The acidic solution is an HF acid solution, and the dielectric layer includes one or more of SiOx, SiNx, and MgF2.

4. The method for manufacturing a solar cell according to claim 3, characterized in that, When the dielectric layer consists only of SiOx, the thickness of the dielectric layer is 10-20 nm; When the dielectric layer consists only of SiNx and MgF2, the thickness of the dielectric layer is 2-5 nm.

5. The method for manufacturing a solar cell according to claim 1, characterized in that, In the step of forming a dielectric layer on the outer surface of the first passivation layer away from the substrate, and filling the first patterned slot and each of the pores with the dielectric material of the dielectric layer: The dielectric layer is deposited on the outer surface using vapor deposition or physical vapor deposition, so that the dielectric layer completely covers the outer surface and the dielectric material of the dielectric layer fills the first patterned groove. Part of the dielectric material of the dielectric layer also fills the portion of the pores that are away from the substrate.

6. The method for manufacturing a solar cell according to claim 1, characterized in that, The step of providing a battery body specifically includes: A passivation contact layer and a first passivation layer are sequentially formed on the first surface of the substrate; A first patterned groove is formed on the first passivation layer using a laser to expose the passivation contact layer, and a plurality of pores are formed in the exposed area of ​​the passivation contact layer.

7. The method for manufacturing a solar cell according to claim 6, characterized in that, The step of providing a battery body further includes: A doped conductive layer and a second passivation layer are sequentially formed on the second surface of the substrate; A second patterned groove is formed on the second passivation layer using a laser to expose the doped conductive layer; The step of forming the first electrode in the first patterned slot further includes: The surface of the second passivation layer and the interior of the second patterned groove are treated with an acidic solution; A second electrode is formed in the second patterned groove.

8. A method for manufacturing a solar cell according to any one of claims 1-6, characterized in that, The step of forming the first electrode in the first patterned groove specifically includes: A first nickel layer, a first copper layer, and a first silver layer are sequentially formed in the first patterned groove to form the first electrode.

9. A solar cell, characterized in that, The solar cell is manufactured using the method for manufacturing a solar cell as described in any one of claims 1-8.

10. The solar cell according to claim 9, characterized in that, The passivation contact layer includes a polysilicon-doped conductive layer with a thickness of 90nm-110nm.

11. The solar cell according to claim 10, characterized in that, Each of the pores is filled with the medium material.

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