A reference voltage source circuit and a chip

Abstract

The present application provides a reference voltage source circuit and a chip, including: a power generation circuit, a feedback control circuit, a reference voltage generation circuit, and an output sensing circuit; the power generation circuit is used to provide a power supply voltage to the feedback control circuit, the reference voltage generation circuit, and the output sensing circuit to supply power to the feedback control circuit, the reference voltage generation circuit, and the output sensing circuit; the output sensing circuit is used to sense the output voltage and provide the obtained divided voltage to the reference voltage generation circuit; the reference voltage generation circuit is used to generate a reference voltage, generate a feedback signal according to the deviation between the reference voltage and the divided voltage, and provide the feedback signal to the feedback control circuit; the feedback control circuit is used to provide a control signal to the power generation circuit based on the feedback signal to achieve negative feedback; the power generation circuit is further used to adjust the voltage value of the output power supply voltage based on the control signal to output a voltage with high precision, high power supply rejection ratio, and low temperature coefficient.

Description

Technical Field

[0001] This application relates to the field of integrated circuit technology, and in particular, to a reference voltage source circuit and a chip. Background Art

[0002] With the development of the electronic field, highly precise instruments and numerous portable electronic products have become the focus of current research. Correspondingly, the research and development of high-precision reference voltage sources have become particularly important. High-precision reference voltage sources play a key role in achieving high performance, low power consumption, portability, and communication performance, and have contributed to the continuous innovation and performance improvement of electronic products.

[0003] Existing high-precision reference voltage sources are based on bipolar transistors to generate high-precision voltage sources. The circuit structure of this kind of circuit is complex and occupies a large chip area. This design usually uses bipolar transistors as the key components of the voltage reference source, which may lead to a significant increase in chip area, or make the chip production process complex, consume higher production costs, or have a negative impact on the power consumption of the system. Summary of the Invention

[0004] In view of this, this application provides a reference voltage source circuit and a chip for accurately and reliably generating a stable voltage.

[0005] Specifically, this application is implemented through the following technical solutions:

[0006] In the first aspect of this application, a reference voltage source circuit is provided. The reference voltage source circuit includes a power generation circuit, a feedback control circuit, a reference voltage generation circuit, and an output sensing circuit; wherein,

[0007] The input end of the power generation circuit is connected to an external voltage source, and the output end of the power generation circuit is respectively connected to the power access end of the feedback control circuit, the power access end of the reference voltage generation circuit, and the power access end of the output sensing circuit; the power generation circuit is used to provide a power supply voltage to the feedback control circuit, the reference voltage generation circuit, and the output sensing circuit to supply power to the feedback control circuit, the reference voltage generation circuit, and the output sensing circuit;

[0008] The output sensing circuit is composed of a plurality of series-connected voltage dividing resistors. One end of the plurality of voltage dividing resistors is grounded, and the other end of the plurality of voltage dividing resistors constitutes the power access end of the output sensing circuit;

[0009] One end where the first specified voltage-dividing resistor and the second specified voltage-dividing resistor among the multiple voltage-dividing resistors are connected constitutes the sensing end of the output sensing circuit; the output sensing circuit is configured to sense the voltage division at the sensing end and provide the voltage division to the reference voltage generation circuit;

[0010] The output end of the reference voltage generation circuit is connected to the input end of the feedback control circuit; the reference voltage generation circuit is configured to generate a reference voltage based on the power supply voltage, generate a feedback signal according to the deviation between the reference voltage and the voltage division, and provide the feedback signal to the feedback control circuit;

[0011] The output end of the feedback control circuit is connected to the control end of the power supply generation circuit; the feedback control circuit is configured to provide a control signal to the power supply generation circuit based on the feedback signal to achieve negative feedback;

[0012] The power supply generation circuit is further configured to adjust the voltage value of the output power supply voltage based on the control signal to output a constant-voltage power supply voltage.

[0013] A second aspect of the present application provides a chip, which includes the reference voltage source circuit provided in the first aspect of the present application.

[0014] For the reference voltage source circuit and the chip provided in the present application, on the one hand, the power supply voltage is provided by the power supply generation circuit, so that the reference voltage generated by the reference voltage generation circuit is no longer affected by the external voltage source, that is, the reference voltage generated by the reference voltage generation circuit is no longer affected by the input power supply. In this way, the output voltage can have a higher power supply rejection ratio; on the other hand, by setting the output sensing circuit and the feedback control circuit, the power supply generation circuit can be more accurately controlled based on the voltage division sensed by the output sensing circuit, so that the power supply voltage output by the power supply generation circuit is more stable and has a lower temperature coefficient. Furthermore, the output sensing circuit provides a more stable voltage with a lower temperature coefficient to the external circuit; on the third hand, by setting the output sensing circuit to be composed of multiple series-connected voltage-dividing resistors, different voltage levels of voltage can be output to the external circuit through the voltage-dividing resistors to adapt to more external circuit applications. Description of the Drawings

[0015] Figure 1 It is a schematic diagram of the first embodiment of the reference voltage source circuit provided by the present application;

[0016] Figure 2 It is a circuit diagram of the second embodiment of the reference voltage source circuit provided by the present application;

[0017] Figure 3 It is a circuit diagram of the third embodiment of the reference voltage source circuit provided by the present application;

[0018] Figure 4 This is the circuit diagram of the fourth embodiment of the reference voltage source circuit provided by this application.

[0019] Description of the reference numerals:

[0020] 1: Power generation circuit;

[0021] 2: Feedback control circuit;

[0022] 3: Reference voltage generation circuit;

[0023] 4: Output sensing circuit;

[0024] 11: First current mirror;

[0025] 12: Second current mirror;

[0026] 110: Input terminal of the power generation circuit;

[0027] 120: Output terminal of the power generation circuit;

[0028] 130: Control terminal of the power generation circuit;

[0029] 210: Power supply connection terminal of the feedback control circuit;

[0030] 220: Input terminal of the feedback control circuit;

[0031] 230: Output terminal of the feedback control circuit;

[0032] 310: Power supply connection terminal of the reference voltage generation circuit;

[0033] 320: Output terminal of the reference voltage generation circuit;

[0034] 330: Input terminal of the reference voltage generation circuit;

[0035] 410: Power supply connection terminal of the output sensing circuit;

[0036] 420: Sensing terminal of the output sensing circuit;

[0037] M1: First MOS transistor;

[0038] M2: Second MOS transistor;

[0039] M3: Third MOS transistor;

[0040] M4: Fourth MOS transistor;

[0041] M5: Fifth MOS transistor;

[0042] M6: Sixth MOS transistor;

[0043] M7: Seventh MOS transistor;

[0044] M8: The eighth MOS transistor;

[0045] M9: The ninth MOS transistor;

[0046] M10: The tenth MOS transistor;

[0047] M11: The eleventh MOS transistor;

[0048] M12: The twelfth MOS transistor;

[0049] M13: The thirteenth MOS transistor;

[0050] R1 / R2: Voltage dividing resistors;

[0051] R3: The first resistor;

[0052] C1: The first capacitor. Detailed implementation manners

[0053] Here, the exemplary embodiments will be described in detail, and the examples are shown in the drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation manners described in the following exemplary embodiments do not represent all the implementation manners consistent with the present application.

[0054] The terms used in this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The singular forms "a", "the" and "said" used in this application are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0055] It should be understood that although the terms first, second, third, etc. may be used in this application to describe various information, such information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of this application, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the word "if" as used herein may be interpreted as "when" or "while" or "in response to a determination".

[0056] This application provides a reference voltage source circuit for accurately and reliably generating a stable voltage.

[0057] In the reference voltage source circuit provided by the present application, on the one hand, a power supply voltage is provided by a power generation circuit. In this way, the reference voltage generated by the reference voltage generation circuit is no longer affected by an external voltage source, that is, the reference voltage generated by the reference voltage generation circuit is no longer affected by the input power supply. Thus, a voltage with a higher power supply rejection ratio can be output. On the other hand, by providing an output sensing circuit and a feedback control circuit, the power generation circuit can be controlled more accurately and precisely based on the voltage division sensed by the output sensing circuit, so that the power supply voltage output by the power generation circuit has a lower temperature coefficient, and further the voltage provided by the output sensing circuit to the external circuit has a lower temperature coefficient. On the third hand, by arranging the output sensing circuit to be composed of a plurality of series-connected voltage dividing resistors, different voltage levels of voltage can be output to an external circuit through the voltage dividing resistors to adapt to more external circuits.

[0058] Specific embodiments are given below to introduce the technical solutions of the present application in detail.

[0059] Figure 1 It is a schematic diagram of the first embodiment of the reference voltage source circuit provided by the present application. Please refer to Figure 1 , the reference voltage source circuit provided in this embodiment includes a power generation circuit 1, a feedback control circuit 2, a reference voltage generation circuit 3, and an output sensing circuit 4; wherein,

[0060] The input terminal 110 of the power generation circuit 1 is connected to an external voltage source, and the output terminal 120 of the power generation circuit 1 is respectively connected to the power supply access terminal 210 of the feedback control circuit 2, the power supply access terminal 310 of the reference voltage generation circuit 3, and the power supply access terminal 410 of the output sensing circuit 4; the power generation circuit 1 is used to provide a power supply voltage to the feedback control circuit 2, the reference voltage generation circuit 3, and the output sensing circuit 4 to supply power to the feedback control circuit 2, the reference voltage generation circuit 3, and the output sensing circuit 4;

[0061] The output sensing circuit 4 is composed of a plurality of series-connected voltage dividing resistors. One end of the plurality of voltage dividing resistors is grounded, and the other end of the plurality of voltage dividing resistors constitutes the power supply access terminal 410 of the output sensing circuit 4;

[0062] One end where the first specified voltage dividing resistor and the second specified voltage dividing resistor among the plurality of voltage dividing resistors are connected constitutes the sensing terminal 420 of the output sensing circuit 4; the output sensing circuit 4 is used to sense the voltage division at the sensing terminal 420 and provide the voltage division to the reference voltage generation circuit;

[0063] The output terminal 320 of the reference voltage generation circuit 3 is connected to the input terminal 220 of the feedback control circuit 2; the reference voltage generation circuit 3 is configured to generate a reference voltage based on the power supply voltage, generate a feedback signal according to the deviation between the reference voltage and the voltage division, and provide the feedback signal to the feedback control circuit 2;

[0064] The output terminal 230 of the feedback control circuit 2 is connected to the control terminal 130 of the power supply generation circuit 1; the feedback control circuit 2 is configured to provide a control signal to the power supply generation circuit 1 based on the feedback signal to achieve negative feedback;

[0065] The power supply generation circuit 1 is further configured to adjust the voltage value of the output power supply voltage based on the control signal to output a constant-voltage power supply voltage.

[0066] Specifically, the power supply generation circuit 1 is configured to provide the required power supply voltage for each functional module of the reference voltage source circuit, and the power supply voltage generated by the power supply generation circuit 1 can ensure the stability of the power supply voltage and meet the requirements.

[0067] In specific implementation, the specific composition structure of the power supply generation circuit 1 can be set according to actual needs, and in this embodiment, it is not limited thereto. For example, in one embodiment, the power supply generation circuit 1 may include a voltage regulator or various types of amplifiers.

[0068] Further, an external voltage source is used to provide electrical energy for the power supply generation circuit 1, and the specific source of the external voltage source is set according to actual needs, and in this embodiment, it is not limited thereto. For example, in one embodiment, the external voltage source may be the power output from another system, such as the output of a DCDC converter, or the output of a battery or a battery pack. It may also be a power supply generated within the chip.

[0069] Figure 2 This is the circuit diagram of the second embodiment of the reference voltage source circuit provided by the present application. Please refer to Figure 2 , the output sensing circuit 4 includes a plurality of voltage dividing resistors, and the voltage dividing resistors are connected in series. It should be noted that the number of voltage dividing resistors included in the output sensing circuit 4, as well as the model and resistance value of each voltage dividing resistor, etc. are set according to actual needs, and in this embodiment, they are not limited thereto. For example, in Figure 2 the shown example, the output sensing circuit 4 is composed of two series-connected voltage dividing resistors, that is, Figure 2 the resistor R1 and the resistor R2 in. Further, a plurality of voltage dividing resistors of the same model can be selected to form the output sensing circuit 4, or a plurality of voltage dividing resistors of different models can be selected to form the output sensing circuit 4. In addition, the resistance values of the plurality of voltage dividing resistors can be the same or different.

[0070] It should be noted that the voltage division of each of the multiple voltage dividing resistors in the output sensing circuit 4 is different. When different voltage values are required for the external circuit, the external circuit is connected to one end of a specific voltage dividing resistor. In this way, an appropriate voltage value can be provided to the external circuit.

[0071] In other words, the output sensing circuit 4 can provide multiple different voltage values to the outside through the multiple voltage dividing resistors, so as to provide the multiple different voltage values to multiple different external circuits.

[0072] Optionally, the resistance values of some or all of the multiple voltage dividing resistors are adjustable. In this way, by adjusting the resistance value, different required output voltage values can be flexibly obtained.

[0073] Furthermore, the first specified voltage dividing resistor is a specified voltage dividing resistor in the output sensing circuit 4. For example, in combination with Figure 1 the example shown, the first voltage dividing resistor connected to the power supply access terminal 410 of the output sensing circuit 4 can be used as the first specified voltage dividing resistor.

[0074] Furthermore, the second specified voltage dividing resistor is a voltage dividing resistor connected in sequence with the first specified voltage dividing resistor. After the staff determines the first specified voltage dividing resistor, the next voltage dividing resistor connected to it can be used as the second specified voltage dividing resistor.

[0075] Furthermore, after determining the first specified voltage dividing resistor and the second specified voltage dividing resistor, the end where the first specified voltage dividing resistor and the second specified voltage dividing resistor are connected is determined as the sensing end of the output sensing circuit 4, and the voltage division at the sensing end is provided to the reference voltage generation circuit 3.

[0076] Furthermore, the reference voltage generation circuit 3 can generate a reference voltage based on the power supply voltage. In specific implementation, the reference voltage is related to the power supply voltage value and the internal components of the reference voltage generation circuit 3. After determining the power supply voltage value output by the power supply generation circuit 1, the value of the reference voltage can be obtained according to the reference voltage generation circuit 3.

[0077] It should be noted that by providing a stable power supply voltage through the power supply generation circuit 1, the accuracy of the reference voltage can be guaranteed, which provides a guarantee for improving the high power supply ripple rejection ratio of the reference voltage source and reducing the output voltage temperature coefficient.

[0078] Furthermore, please continue to refer to Figure 1 , the reference voltage generation circuit 2 can generate a feedback signal according to the reference voltage and the voltage division sensed by the sensing end of the output sensing circuit 4, and provide the feedback signal to the feedback control circuit.

[0079] In specific implementation, the reference voltage is compared with the divided voltage, and a feedback signal is obtained based on the deviation between the reference voltage and the divided voltage. In other words, the greater the difference between the reference voltage and the divided voltage, the greater the feedback signal.

[0080] In this step, after the feedback control circuit 2 obtains the feedback signal, a control signal is generated based on the feedback signal, so that the power supply generation circuit 1 adjusts the voltage value of the output power supply voltage based on the control signal. For example, in one embodiment, when the divided voltage is higher than the reference voltage, the reference voltage generation circuit 3 generates a feedback signal to the feedback control circuit 2, and the feedback control circuit 2 generates a control signal based on the feedback signal, and then controls the power supply generation circuit 1 to reduce the provided power supply voltage. For another example, when the divided voltage is lower than the reference voltage, the reference voltage generation circuit 3 generates a feedback signal to the feedback control circuit 2, and the feedback control circuit 2 generates a control signal based on the feedback signal, and then controls the power supply generation circuit 1 to increase the provided power supply voltage.

[0081] For the reference voltage source circuit provided in this embodiment, on the one hand, the power supply voltage is provided by the power supply generation circuit, so that the reference voltage generated by the reference voltage generation circuit is no longer affected by the external voltage source, that is, the reference voltage generated by the reference voltage generation circuit is no longer affected by the input power supply. In this way, a higher power supply ripple rejection ratio can be achieved for the output voltage; on the other hand, by setting the output sensing circuit and the feedback control circuit, the power supply generation circuit can be controlled more accurately and precisely based on the divided voltage sensed by the output sensing circuit, so that the power supply voltage output by the power supply generation circuit is more stable, and further the voltage provided by the output sensing circuit to the external is more stable; on the third hand, by setting the output sensing circuit to be composed of a plurality of series-connected voltage dividing resistors, in this way, different voltage levels of voltage can be output to the external circuit through the voltage dividing resistors to adapt to more external circuits.

[0082] Please also refer to Figure 1 and Figure 2 , in the shown example, the reference voltage generation circuit 3 includes a first MOS transistor M1 and a second MOS transistor M2, where

[0083] The drain of the first MOS transistor M1 is connected to the source of the second MOS transistor M2 and the gate of the second MOS transistor M2 to form the output terminal 210 of the reference voltage generation circuit 3;

[0084] The drain of the second MOS transistor M2 forms the power supply input terminal 310 of the reference voltage generation circuit 3 and is connected to the output terminal 120 of the power supply voltage generation circuit 1;

[0085] The gate of the first MOS transistor M1 forms the input terminal 330 of the reference voltage generation circuit 3 and is connected to the sensing terminal 420 of the output sensing circuit 4;

[0086] The source of the first MOS transistor M1 is grounded.

[0087] Specifically, the reference voltage generation circuit 3 is configured to generate a reference voltage based on a power supply voltage, generate a feedback signal according to a deviation between the reference voltage and a voltage division, and provide the feedback signal to the feedback control circuit.

[0088] Furthermore, in specific implementation, the specific models of the first MOS transistor M1 and the second MOS transistor M2 can be selected according to actual needs.

[0089] It should be noted that the feedback control circuit 2 can control each operating point of the transistors inside the reference voltage generation circuit 3, and thus control the transistors inside the reference voltage generation circuit 3, so as to obtain a more accurate reference voltage.

[0090] Optionally, please continue to refer to Figure 1 and Figure 2 , in the shown example, the feedback control circuit 2 includes a third MOS transistor M3, where

[0091] The source of the third MOS transistor M3 constitutes the power input terminal of the feedback control circuit 2 and is connected to the output terminal 120 of the power supply voltage generation circuit 1;

[0092] The gate of the third MOS transistor M3 constitutes the input terminal 220 of the feedback control circuit 2 and is connected to the output terminal 320 of the reference voltage generation circuit 3.

[0093] Specifically, the gate of the third MOS transistor M3 is configured to receive the feedback signal generated by the reference voltage generation circuit 3, and output the control signal generated by the feedback control circuit 2 to the power supply generation circuit 1 through the drain of the third MOS transistor M3.

[0094] Next, in combination with Figure 1 and Figure 2 , the working principle of this circuit will be briefly introduced:

[0095] Furthermore, referring to Figure 1 and Figure 2, the gate of the first MOS transistor M1 forms the input end of the reference voltage generation circuit 3 and is connected to the sensing end 420 of the output sensing circuit 4. When the divided voltage at the sensing end 420 of the output sensing circuit 4 is greater than the reference voltage, the voltage of the gate of the first MOS transistor M1 increases, causing the voltage at the drain of the first MOS transistor M1 to decrease. At this time, the voltage of the feedback signal output by the reference voltage generation circuit 2 to the feedback control circuit 3 decreases; further, when the divided voltage at the sensing end 420 of the output sensing circuit 4 is lower than the reference voltage, the voltage of the gate of the first MOS transistor M1 decreases, causing the voltage at the drain of the first MOS transistor M1 to increase. At this time, the voltage of the feedback signal output by the reference voltage generation circuit 2 to the feedback control circuit 3 increases.

[0096] Further, when the voltage of the feedback signal input to the reference voltage generation circuit 3 decreases, the gate voltage of the third MOS transistor M3 decreases, and the drain voltage of the third MOS transistor M3 increases. At this time, the voltage of the control signal output by the feedback control circuit 2 to the power generation circuit 1 increases. For another example, in another embodiment, in combination with the above example, when the feedback signal input to the reference voltage generation circuit 3 increases, the gate voltage of the third MOS transistor M3 increases, and the drain voltage of the third MOS transistor M3 decreases. At this time, the voltage of the control signal output by the feedback control circuit 2 to the power generation circuit 1 decreases.

[0097] The reference voltage generation circuit provided in this embodiment gives the specific circuit structures of the reference voltage generation circuit and the feedback control circuit. Through such a setting, the power generation circuit can be controlled more accurately and precisely, making the power voltage output by the power generation circuit more stable, and further making the voltage provided by the output sensing circuit to the outside more stable.

[0098] Optionally, please continue to refer to Figure 1 and Figure 2 , in the shown example, the power generation circuit includes a first current mirror 11 and a second current mirror 12; wherein,

[0099] The first input end of the first current mirror 11 forms the input end 110 of the power generation circuit, and the output end of the first current mirror 11 forms the output end 120 of the power generation circuit;

[0100] The second input end of the first current mirror 11 is connected to the output end of the second current mirror 12, and the bias current output end of the first current mirror 11 is connected to the first input end of the second current mirror 12;

[0101] The second input end of the second current mirror 12 forms the control end 130 of the power generation circuit, and the bias current output end of the second current mirror 12 is grounded.

[0102] In this embodiment, the first current mirror provides a power conversion function for the power generation circuit, and the second current mirror completes the control of the power generation circuit. Through such a setting, the power generation circuit can be controlled more accurately and precisely, so that the power voltage output by the power generation circuit is more stable, and further the voltage provided by the sensing circuit to the outside is more stable.

[0103] Optionally, please continue to refer to Figure 1 and Figure 2 In the illustrated example, the specific configuration of the first current mirror 11 may be as shown in Figure 2 which is briefly introduced below:

[0104] The first current mirror 11 includes an eighth MOS transistor M8, a ninth MOS transistor M9, and a tenth MOS transistor M10; where

[0105] The source of the ninth MOS transistor M9, the source of the eighth MOS transistor M8, and the source of the tenth MOS transistor M10 are connected to form the first input terminal of the first current mirror 11; the gate of the ninth MOS transistor M9 is connected to the gate of the eighth MOS transistor M8, the drain of the eighth MOS transistor M8, and the gate of the tenth MOS transistor M10 to form the second input terminal of the first current mirror 11;

[0106] The drain of the ninth MOS transistor M9 forms the bias current output terminal of the first current mirror 11; the drain of the tenth MOS transistor M10 forms the output terminal of the first current mirror 11.

[0107] The power generation circuit provided in this embodiment forms a second current mirror through the eighth MOS transistor, the ninth MOS transistor, and the tenth MOS transistor. This current mirror is a common-gate current mirror, which can adjust the gate voltage of M4 and M5 through M9 and provide the obtained current to other circuits through M10.

[0108] Optionally, the first current mirror 11 may also have other composition forms. Another possible first current mirror is introduced below:

[0109] Figure 3 This is the circuit diagram of the third embodiment of the reference voltage source circuit provided in this application. Please refer to Figure 3 In a possible implementation manner, in the power generation circuit 1, the first current mirror 11 includes an eighth MOS transistor M8, a ninth MOS transistor M9, a tenth MOS transistor M10, an eleventh MOS transistor M110, a twelfth MOS transistor M120, and a thirteenth MOS transistor M130; where

[0110] The source of the ninth MOS transistor M9, the source of the eighth MOS transistor M8, and the source of the tenth MOS transistor M10 are connected to form the first input terminal of the first current mirror 11;

[0111] The gates of the ninth MOS transistor M9, the eighth MOS transistor M8, the drain of the eighth MOS transistor M8, and the gate of the tenth MOS transistor M10 are connected and then connected to the source of the twelfth MOS transistor M120;

[0112] The drain of the ninth MOS transistor M9 is connected to the source of the eleventh MOS transistor M110, and the drain of the tenth MOS transistor M10 is connected to the source of the thirteenth MOS transistor M130;

[0113] The drain of the eleventh MOS transistor M110 constitutes the bias current output terminal of the first current mirror 11; the drain of the thirteenth MOS transistor M130 constitutes the output terminal of the first current mirror 11;

[0114] The gates of the eleventh MOS transistor M110, the twelfth MOS transistor M120, the drain of the twelfth MOS transistor M120, and the gate of the thirteenth MOS transistor M130 are connected to form the second input terminal of the first current mirror 11.

[0115] The first current mirror 11 provided in this embodiment is a cascode current mirror, which has higher precision and can better suppress power supply noise compared with ordinary current mirrors.

[0116] The power generation circuit provided in this embodiment forms a first current mirror through the eighth MOS transistor, the ninth MOS transistor, the tenth MOS transistor, the eleventh MOS transistor, the twelfth MOS transistor, and the thirteenth MOS transistor, and then completes the generation of the power through the first current mirror. Through such a setting, the required power can be generated more accurately, the power supply voltage output by the power generation circuit is more stable, has a higher power supply rejection ratio and a lower temperature coefficient, and further enables the output sensing circuit to provide a more stable voltage to the outside.

[0117] Optionally, please refer to Figure 2 and the specific structure of the second current mirror 12 can be as Figure 2 shown, and a brief introduction is given below:

[0118] The second current mirror 12 includes a fourth MOS transistor M4, a fifth MOS transistor M5, and a first resistor R3, where

[0119] The drain of the fifth MOS transistor M5, the gate of the fifth MOS transistor M6, and the gate of the fourth MOS transistor M4 are connected to form the first input terminal of the second current mirror 12;

[0120] The drain of the fourth MOS transistor M4 constitutes the output terminal of the second current mirror 12;

[0121] The source of the fourth MOS transistor M4 is connected to the first end of the first resistor R3 to form the second input terminal of the second current mirror 12;

[0122] The second end of the first resistor R3 is connected to the source of the fifth MOS transistor M5 to form the bias current output terminal of the second current mirror 12.

[0123] The power generation circuit provided in this embodiment forms a second current mirror through the fourth MOS transistor, the fifth MOS transistor, and the first resistor, and then controls the power generation circuit through the second current mirror. Through such a setting, the power generation circuit can be controlled more accurately and precisely, so that the power supply voltage output by the power generation circuit has a higher power supply rejection ratio and a lower temperature coefficient, and then the output sensing circuit provides a more stable voltage to the outside.

[0124] Optionally, the second current mirror 12 may also have other component forms. The following gives an introduction to another possible second current mirror 12:

[0125] Figure 4 This is the circuit diagram of the fourth embodiment of the reference voltage source circuit provided in this application. Please refer to Figure 4 , in the power generation circuit 1, the second current mirror 12 includes a fourth MOS transistor M4, a fifth MOS transistor M5, a sixth MOS transistor M6, a seventh MOS transistor M7, and a first resistor R3, where

[0126] The drain of the fifth MOS transistor M5, the gate of the fifth MOS transistor M5, and the gate of the fourth MOS transistor M4 are connected and then connected to the source of the seventh MOS transistor M7;

[0127] The drain of the seventh MOS transistor M7, the gate of the seventh MOS transistor M7, and the gate of the sixth MOS transistor M6 are connected to form the first input terminal of the second current mirror 12;

[0128] The drain of the sixth MOS transistor M6 constitutes the output terminal of the second current mirror 12; the drain of the fourth MOS transistor M4 is connected to the source of the sixth MOS transistor M6 to form the second input terminal of the second current mirror 12;

[0129] The source of the fourth MOS transistor M4 is connected to the first end of the first resistor; the second end of the first resistor R3 is connected to the source of the fifth MOS transistor M5 to form the bias current output terminal of the second current mirror 12.

[0130] The second current mirror 12 provided in this embodiment is a cascode current mirror, which has higher precision and can better suppress power supply noise compared to ordinary current mirrors.

[0131] In this embodiment, the second current mirror is constituted by a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, a seventh MOS transistor, and a first resistor. Then, the power supply generation circuit is controlled through the second current mirror. With such an arrangement, the power supply generation circuit can be controlled more accurately and precisely, making the power supply voltage output by the power supply generation circuit more stable, and further making the voltage provided by the output sensing circuit to the outside more stable.

[0132] During specific implementation, the specific forms of the first current mirror and the second current mirror can be freely selected according to actual needs. In this embodiment, no limitation is imposed on this.

[0133] It should be noted that please also refer to Figures 2 to 4 , the power supply generation circuit 1 may further include a first capacitor C1, which is connected between the output terminal of the first current mirror 11 and the ground.

[0134] Optionally, please continue to refer to Figure 4 , in Figure 4 the illustrated example, the fourth MOS transistor M4, the fifth MOS transistor M5, the sixth MOS transistor M6, the seventh MOS transistor M7, the eighth MOS transistor M8, the ninth MOS transistor M9, and the tenth MOS transistor M10 are used to bias the external voltage source based on the external voltage source to generate a power supply voltage.

[0135] It should be noted that by arranging the fourth MOS transistor to the tenth MOS transistor, the stability and reliability of the power supply voltage output by the power supply generation circuit 1 can be ensured.

[0136] During specific implementation, for example, in one embodiment, in combination with the above example, when the power supply voltage output by the power supply generation circuit 1 is too high, the voltage of the control signal generated by the feedback control circuit 2 increases, causing the source-drain voltage of the sixth MOS transistor M6 to increase, resulting in an increase in the gate voltage of the eighth MOS transistor M8, the ninth MOS transistor M9, and the tenth MOS transistor M10, and causing the power supply voltage output by the power supply generation circuit 1 to decrease. At this time, the voltage division at the sensing end of the output sensing circuit 4 decreases to be consistent with the reference voltage, completing the negative feedback regulation.

[0137] For another example, in another embodiment, in combination with the above example, when the power supply voltage output by the power generation circuit 1 is too low, the voltage of the control signal generated by the feedback control circuit 2 decreases, causing the source and drain voltages of the sixth MOS transistor M6 to decrease, resulting in a decrease in the gate voltages of the eighth MOS transistor M8, the ninth MOS transistor M9, and the tenth MOS transistor M10, causing the power supply voltage output by the power generation circuit 1 to increase. At this time, the divided voltage at the sensing end of the output sensing circuit 4 increases to be consistent with the reference voltage, completing the negative feedback regulation.

[0138] It should be noted that for the reference voltage source circuit provided in this embodiment, by integrating the power generation circuit 1, the feedback control circuit 2, the reference voltage generation circuit 3, and the output sensing circuit 4 in an extremely small chip, the chip area occupied is extremely small, which can reduce power consumption, improve performance, and save costs.

[0139] For the reference voltage source circuit provided in this embodiment, on the one hand, when the power supply voltage generated by the power generation circuit is too high or too low, the power supply voltage is regulated through negative feedback of the feedback signal, which can ensure that the power generation circuit stably and reliably outputs the power supply voltage. In this way, the reference voltage generated by the reference voltage generation circuit is no longer affected by the external voltage source, and thus a voltage with a higher power supply rejection ratio can be output; in addition, by setting the output sensing circuit to be composed of multiple series-connected voltage dividing resistors, different voltage levels of voltage can be output to the external circuit through the voltage dividing resistors to adapt to more external circuits.

[0140] It can be understood that a MOS transistor has a drain (D), a gate (G), a source (S), and a body or back gate (B). In this application, the body or back gate (B) of each MOS transistor can be connected to its own source (S), or grounded, or connected to the power supply. For example, for an NMOS transistor, the body or back gate (B) of the MOS transistor can be grounded; for a PMOS transistor, the body or back gate (B) of the MOS transistor can be connected to the power supply.

[0141] In addition, in this application, M1 to M7 can be NMOS transistors, and M8 to M13 can be PMOS transistors.

[0142] On the second aspect of this application, a chip is further provided, and the chip includes the reference voltage source circuit described in any one of the above.

[0143] The above are only the preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of this application shall be included within the scope of protection of this application.

Claims

1. A reference voltage source circuit, characterized in that, The reference voltage source circuit includes a power generation circuit, a feedback control circuit, a reference voltage generation circuit, and an output sensing circuit; wherein, The input end of the power generation circuit is connected to an external voltage source, and the output end of the power generation circuit is respectively connected to the power access end of the feedback control circuit, the power access end of the reference voltage generation circuit, and the power access end of the output sensing circuit; the power generation circuit is configured to provide a power supply voltage to the feedback control circuit, the reference voltage generation circuit, and the output sensing circuit to supply power to the feedback control circuit, the reference voltage generation circuit, and the output sensing circuit; The output sensing circuit is composed of a plurality of series-connected voltage dividing resistors, one end of the plurality of voltage dividing resistors is grounded, and the other end of the plurality of voltage dividing resistors constitutes the power access end of the output sensing circuit; One end where the first specified voltage dividing resistor and the second specified voltage dividing resistor in the plurality of voltage dividing resistors are connected constitutes the sensing end of the output sensing circuit; the output sensing circuit is configured to sense the voltage division at the sensing end and provide the voltage division to the reference voltage generation circuit; The reference voltage generation circuit includes a first MOS transistor and a second MOS transistor. The drain of the first MOS transistor is connected to the source of the second MOS transistor and the gate of the second MOS transistor to form the output end of the reference voltage generation circuit, and this output end is connected to the input end of the feedback control circuit; the drain of the second MOS transistor constitutes the power input end of the reference voltage generation circuit and is connected to the output end of the power voltage generation circuit; the gate of the first MOS transistor constitutes the input end of the reference voltage generation circuit and is connected to the sensing end of the output sensing circuit; the source of the first MOS transistor is grounded; the reference voltage generation circuit is configured to generate a reference voltage based on the power supply voltage, generate a feedback signal according to the deviation between the reference voltage and the voltage division, and provide the feedback signal to the feedback control circuit; The output end of the feedback control circuit is connected to the control end of the power generation circuit; the feedback control circuit includes a third MOS transistor, and the source of the third MOS transistor constitutes the power input end of the feedback control circuit; the gate of the third MOS transistor constitutes the input end of the feedback control circuit; the feedback control circuit is configured to provide a control signal to the power generation circuit based on the feedback signal to achieve negative feedback; The power generation circuit is further configured to adjust the voltage value of the output power supply voltage based on the control signal to output a power supply voltage with a high power supply rejection ratio and a low temperature coefficient.

2. The reference voltage source circuit according to claim 1, wherein The power generation circuit includes a first current mirror and a second current mirror; wherein, The first input end of the first current mirror constitutes the input end of the power generation circuit, and the output end of the first current mirror constitutes the output end of the power generation circuit; The second input end of the first current mirror is connected to the output end of the second current mirror, and the bias current output end of the first current mirror is connected to the first input end of the second current mirror; The second input terminal of the second current mirror constitutes the control terminal of the power generation circuit, and the bias current output terminal of the second current mirror is grounded.

3. The reference voltage source circuit according to claim 2, characterized in that, The second current mirror includes a fourth MOS transistor, a fifth MOS transistor, and a first resistor, where the drain of the fifth MOS transistor, the gate of the fifth MOS transistor, and the gate of the fourth MOS transistor are connected together to form the first input terminal of the second current mirror; the drain of the fourth MOS transistor constitutes the output terminal of the second current mirror; the source of the fourth MOS transistor is connected to the first end of the first resistor to form the second input terminal of the second current mirror; the second end of the first resistor and the source of the fifth MOS transistor are connected together to form the bias current output terminal of the second current mirror.

4. The reference voltage source circuit according to claim 2, wherein The second current mirror includes a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, a seventh MOS transistor, and a first resistor, where the drain of the fifth MOS transistor, the gate of the fifth MOS transistor, and the gate of the fourth MOS transistor are connected and then connected to the source of the seventh MOS transistor; the drain of the seventh MOS transistor, the gate of the seventh MOS transistor, and the gate of the sixth MOS transistor are connected together to form the first input terminal of the second current mirror; the drain of the sixth MOS transistor constitutes the output terminal of the second current mirror; the drain of the fourth MOS transistor is connected to the source of the sixth MOS transistor to form the second input terminal of the second current mirror; the source of the fourth MOS transistor is connected to the first end of the first resistor; the second end of the first resistor and the source of the fifth MOS transistor are connected together to form the bias current output terminal of the second current mirror.

5. The reference voltage source circuit according to claim 2 or 3, characterized in that, The first current mirror includes an eighth MOS transistor, a ninth MOS transistor, and a tenth MOS transistor; where the sources of the ninth MOS transistor, the eighth MOS transistor, and the tenth MOS transistor are connected to form the first input terminal of the first current mirror; the gate of the ninth MOS transistor is connected to the gate of the eighth MOS transistor, the drain of the eighth MOS transistor, and the gate of the tenth MOS transistor to form the second input terminal of the first current mirror; the drain of the ninth MOS transistor constitutes the bias current output terminal of the first current mirror; the drain of the tenth MOS transistor constitutes the output terminal of the first current mirror.

6. The reference voltage source circuit according to claim 2 or 4, characterized in that, The first current mirror includes an eighth MOS transistor, a ninth MOS transistor, a tenth MOS transistor, an eleventh MOS transistor, a twelfth MOS transistor, and a thirteenth MOS transistor; where the sources of the ninth MOS transistor, the eighth MOS transistor, and the tenth MOS transistor are connected to form the first input terminal of the first current mirror; the gate of the ninth MOS transistor, the gate of the eighth MOS transistor, the drain of the eighth MOS transistor, and the gate of the tenth MOS transistor are connected and then connected to the source of the twelfth MOS transistor; the drain of the ninth MOS transistor is connected to the source of the eleventh MOS transistor, and the drain of the tenth MOS transistor is connected to the source of the thirteenth MOS transistor; The drain of the eleventh MOS transistor constitutes the bias current output terminal of the first current mirror; the drain of the thirteenth MOS transistor constitutes the output terminal of the first current mirror; The gate of the eleventh MOS transistor, the gate of the twelfth MOS transistor, the drain of the twelfth MOS transistor, and the gate of the thirteenth MOS transistor are connected to form the second input terminal of the first current mirror.

7. The reference voltage source circuit according to claim 1, characterized in that, The output sensing circuit provides a plurality of different voltage values to the outside through the plurality of voltage dividing resistors to provide the plurality of different voltage values to a plurality of different external circuits.

8. A chip, characterized in that, The chip includes the reference voltage source circuit according to any one of claims 1 to 7.

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