A method for processing a mirror surface of a CVD reaction cavity for semiconductor and application thereof

Abstract

The application discloses a kind of CVD reaction cavity mirror surface structure processing method and application for semiconductor, method includes: S1, select H62 brass ingot as raw material and carry out heating forging, obtain part blank;S2, rough turning is carried out to part blank, after rough turning is completed, part blank is heat treated, then finish turning is carried out, obtains CVD reaction cavity left chamber and CVD reaction cavity right chamber;S3, CVD reaction cavity left chamber and CVD reaction cavity right chamber are welded and handled, and CVD reaction cavity initial body is obtained;S4, CVD reaction cavity initial body is polished and cleaned, and CVD reaction cavity mirror surface structure finished product can be obtained;The application of above-mentioned processing method in CVD reaction cavity mirror surface structure processing;The processing method of the application is reasonable in design, improves CVD reaction cavity processing efficiency and use effect, and is suitable for widely used.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of CVD reaction cavity processing, in particular to a CVD reaction cavity mirror surface processing method for semiconductors and application. BACKGROUND

[0002] CVD (Chemical Vapor Deposition) is a thin film deposition technology that generates solid-state substances from gaseous reactants through a chemical reaction and deposits them on the surface of a wafer, which is an important process for semiconductor chip manufacturing. The uniformity of thin film deposition is crucial to the yield of the final product. The CVD chamber is the place where the entire deposition reaction takes place, and there are multiple field couplings such as flow field, temperature field, and plasma field during the deposition process.

[0003] According to the heating method of CVD, CVD can be divided into hot wall and cold wall. The common chemical vapor deposition system on the market is usually hot wall CVD, which directly relies on the heating of the furnace body to heat the growth area. Hot wall CVD process is relatively more mature, has lower preparation cost, and shows good reliability in material growth, so it is favored by many laboratories. The cold wall CVD system directly supplies power to the conductive substrate through a constant current source, and the chamber wall and the sample are not in direct contact, only slightly heated due to heat radiation conduction, so it is called "cold wall". Its advantage is that the cooling speed can be controlled by the constant current source, and the cooling rate can be controlled within a large range. Currently, manufacturers of hot wall CVD equipment are mainly concentrated in China, the United States and some European countries, including well-known Applied Materials, Quantum Design, Oxford Instruments, firstnano, and Tianjin Zhonghuan, Xiamen Shiyiwei, Hefei Keguang, etc. Cold wall CVD is mainly provided by foreign manufacturers such as Quantum Design.

[0004] The CVD chamber has a great protective effect during the deposition process, is isolated from the outside atmosphere, and ensures a stable deposition environment, which is crucial to the cleanliness and purity of the deposited material. The outer wall of this chamber has a cooling water system, and the inner wall surface requires high roughness, and the final inner wall needs to be plated with gold. The raw material for the CVD chamber is brass H62, which is a common brass with good mechanical properties, good plasticity in hot state, good plasticity in cold state, good cutting property, easy brazing and welding, corrosion resistance, but prone to corrosion cracking, and needs to be forged from small specifications to large diameter specifications. Hot forging must be used in the forging process, and hot forging is prone to material inclusions and cracks, which will cause certain risks to the later parts. SUMMARY

[0005] In view of the above technical problems, the application provides a CVD reaction cavity mirror surface structure processing method for semiconductors and application thereof.

[0006] The technical scheme of the application is as follows: a CVD reaction cavity mirror surface structure processing method for semiconductors, comprising the following steps:

[0007] S1, forging;

[0008] H62 brass ingots are selected as raw materials for heating and forging, the H62 brass ingots are heated to 700-1250 DEG C in a vacuum furnace, and then 10 times of forging is performed to forge the H62 brass ingots from a diameter of 200 mm to a diameter of 550 mm of a part blank;

[0009] During the forging process, the oxide skin on the surface of the H62 brass ingots is cleaned every time of forging;

[0010] S2, part processing;

[0011] S2-1, rough turning is performed on the part blank obtained in step S1, and after the rough turning is completed, the part blank is subjected to heat treatment at a temperature of 500-800 DEG C;

[0012] S2-2, finish turning is performed on the part blank after the rough turning in step S1-1, the finish turning process is divided into 3-5 times of feeding, and the cutting amount of each time is controlled to be 0.4-0.6 mm; and after the finish turning is completed, a CVD reaction cavity left chamber and a CVD reaction cavity right chamber are obtained;

[0013] S3, welding

[0014] The CVD reaction cavity left chamber and the CVD reaction cavity right chamber obtained in step S2-2 are subjected to welding treatment to obtain a CVD reaction cavity primary body, and then the CVD reaction cavity primary body is subjected to shape correction treatment, so that the inner and outer diameter error of the CVD reaction cavity primary body is less than or equal to 0.2 mm;

[0015] S4, surface treatment;

[0016] The CVD reaction cavity primary body after the shape correction treatment in step S3 is subjected to polishing and grinding, then the CVD reaction cavity primary body is ground by using grinding paste until the surface roughness of the inner wall of the CVD reaction cavity primary body reaches Ra 0.5-0.8, and finally the CVD reaction cavity primary body is cleaned, so that a CVD reaction cavity mirror surface structure finished product is obtained.

[0017] Further, in step S1, during the first to fourth times of forging, the forging speed is controlled to be 50-70 m / min; during the fourth to seventh times of forging, the forging speed is controlled to be kept at 150-200 m / min; and during the seventh to tenth times of forging, the forging speed is controlled to be kept at 220-300 m / min;

[0018] Description: By segment forging of H62 brass ingot, and controlling the forging speed of each stage, the internal grain refinement of H62 brass ingot is more uniform.

[0019] Further, in step S2-1, the part blank is roughed in layers, and the machining depth of each layer is controlled to be 5-10 mm; in step S2-2, the tool is processed layer by layer around the same height of all points of the part blank to form an isohypse ring line, and the layer distance and cutting width of each layer are controlled to be 2-4 mm;

[0020] Description: By roughing the part blank in layers, the wear rate of the tool can be effectively reduced, and the processing efficiency of the part blank can be improved; by using the isohypse loop precision machining method, the problem of prolonged processing cycle or excessive excess amount affecting the processing quality caused by the interference of the excess amount during the precision machining of the next layer excess amount can be avoided.

[0021] Further, in step S4, during the polishing process, sandpaper from coarse to fine is used for polishing, and the roughness of the CVD reaction cavity primary body is detected after each polishing;

[0022] Description: By polishing the CVD reaction cavity primary body in stages, the surface finish of the CVD reaction cavity primary body can be improved, thereby improving the use effect.

[0023] Further, after step S1 is completed, the part blank is sealed and placed in an ammonia container for 12-19 h, and the part blank is controlled not to contact the ammonia;

[0024] Description: By sealing and placing the part blank in the ammonia container, the internal cracks and other defects of the part blank can be detected, and the use effect of the CVD reaction cavity mirror surface structure after processing can be avoided.

[0025] Further, before step S1 is performed, the H62 brass ingot is preheated to 350-550°C;

[0026] Description: By preheating the H62 brass ingot, the forgeability of the H62 brass ingot can be improved, and the internal organization is more uniform.

[0027] Further, after step S4 is completed, the CVD reaction cavity mirror surface structure is anodized, the anodizing is carried out in a mixed solution containing 100-250 g / l sulfuric acid, 10-30 g / l oxalic acid and 5-30 g / l glycerol at a temperature of 15-40°C; after anodizing is completed, the CVD reaction cavity mirror surface structure is exposed to neutral salt spray for 12-20 h;

[0028] Description: By anodizing the CVD reaction cavity mirror surface structure, the corrosion resistance of the CVD reaction cavity mirror surface structure is improved, and the service life is improved.

[0029] Further, in step S4, when the CVD reaction cavity is cleaned, first, the CVD reaction cavity is placed in kerosene for ultrasonic cleaning, the ultrasonic frequency is controlled to be 20-30 kHz, the time is 20-30 min, and the temperature is 8-12 DEG C; then the CVD reaction cavity is placed in isopropyl alcohol solution for ultrasonic cleaning, the ultrasonic frequency is controlled to be 35-45 kHz, the time is 20-30 min, and the temperature is 13-16 DEG C; finally, the CVD reaction cavity is dried at a temperature of 110-125 DEG C for 45-55 min;

[0030] Description: By using different solvents and ultrasonic frequencies to clean the CVD reaction cavity, the cleaning comprehensiveness and thoroughness of the CVD reaction cavity can be improved.

[0031] The application also provides an application of the semiconductor CVD reaction cavity mirror surface structure processing method.

[0032] Compared with the prior art, the application has the following advantages:

[0033] First, the processing method is reasonable in design, the overall wall thickness uniformity of the CVD reaction cavity mirror surface structure is high, and there is no leakage point, which effectively improves the processing quality of the CVD reaction cavity mirror surface structure; the CVD reaction cavity mirror surface structure is processed by using natural diamond blades before polishing and grinding, so as to ensure the polishing and grinding amount and precision in the later stage;

[0034] Second, the H62 brass ingot is subjected to segmented forging by using different forging speeds, so that the internal grain refinement of the H62 brass ingot is more uniform, and it is ensured that no adverse defects such as inclusions and cracks are generated in the material;

[0035] Third, the layered rough turning of the part blank can effectively reduce the wear rate of the tool and improve the processing efficiency of the part blank; at the same time, by using the contour line winding finishing method, the problem of prolonged processing cycle or excessive allowance affecting the processing quality caused by the interference of the excess material during the finishing of the next layer can be avoided. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1 It is a schematic view of the CVD reaction cavity mirror surface structure of the application. DETAILED DESCRIPTION

[0037] Example 1

[0038] A semiconductor CVD reaction cavity mirror surface structure processing method comprises the following steps:

[0039] S1, forging;

[0040] Select H62 brass ingot as raw material for heating forging, the H62 brass ingot is placed in the vacuum furnace and heated to 700℃, then 10 times forging, the H62 brass ingot is forged from φ200mm to φ550mm part blank;

[0041] During the forging process, the oxide skin on the surface of the H62 brass ingot is cleaned every time;

[0042] S2, part processing;

[0043] S2-1, rough turning of the part blank obtained in step S1, and heat treatment of the part blank at 500℃ after rough turning;

[0044] S2-2, finish turning of the part blank after rough turning in step S1-1, the finish turning process is divided into three times of feeding, and the cutting amount of each time is controlled to be 0.4mm; CVD reaction chamber left chamber and CVD reaction chamber right chamber are obtained after finish turning;

[0045] S3, welding

[0046] Welding treatment of the CVD reaction chamber left chamber and the CVD reaction chamber right chamber obtained in step S2-2, to obtain a CVD reaction chamber primary body, and then shape correction treatment is performed on the CVD reaction chamber primary body, so that the inner and outer diameter error of the CVD reaction chamber primary body is 0.2mm;

[0047] S4, surface treatment;

[0048] Polishing of the CVD reaction chamber primary body after shape correction treatment in step S3, then grinding to Ra0.8 of the inner wall surface roughness of the CVD reaction chamber primary body by using grinding paste, and finally cleaning the CVD reaction chamber primary body, to obtain a CVD reaction chamber mirror surface structure finished product.

[0049] Example 2

[0050] A semiconductor CVD reaction chamber mirror surface structure processing method, comprising the following steps:

[0051] S1, forging;

[0052] Select H62 brass ingot as raw material for heating forging, the H62 brass ingot is placed in the vacuum furnace and heated to 700℃, then 10 times forging, the H62 brass ingot is forged from φ200mm to φ550mm part blank;

[0053] In the forging process, the oxide skin on the surface of the H62 brass ingot is cleaned every time the ingot is forged; in the first to fourth forging process, the forging speed is controlled to be 50 m / min; in the fourth to seventh forging process, the forging speed is controlled to be kept at 150 m / min; in the seventh to tenth forging process, the forging speed is controlled to be kept at 220 m / min;

[0054] S2, part processing;

[0055] S2-1, rough turning is performed on the part blank obtained in step S1, and after the rough turning is completed, the part blank is heat treated at a temperature of 700℃;

[0056] S2-2, finish turning is performed on the part blank after the rough turning in step S1-1, the finish turning process is divided into four times of feeding, and the cutting amount of each time is controlled to be 0.5mm; after the finish turning is completed, the CVD reaction chamber left chamber and the CVD reaction chamber right chamber are obtained;

[0057] S3, welding

[0058] The CVD reaction chamber left chamber and the CVD reaction chamber right chamber obtained in step S2-2 are subjected to welding treatment to obtain a CVD reaction chamber preliminary body, and then the CVD reaction chamber preliminary body is subjected to straightening treatment so that the inner and outer diameter error of the CVD reaction chamber preliminary body is 0.1mm;

[0059] S4, surface treatment;

[0060] The CVD reaction chamber preliminary body after the straightening treatment in step S3 is subjected to polishing and grinding, then the inner wall surface of the CVD reaction chamber preliminary body is ground to a roughness of Ra0.6 using a grinding paste, and finally the CVD reaction chamber preliminary body is cleaned to obtain a CVD reaction chamber mirror surface structure finished product.

[0061] Example 3

[0062] A semiconductor CVD reaction chamber mirror surface structure processing method, comprising the following steps:

[0063] S1, forging;

[0064] An H62 brass ingot is selected as a raw material for heating and forging, the H62 brass ingot is placed in a vacuum furnace and heated to 1250℃, and then forged for 10 times to forge the H62 brass ingot from a diameter of 200mm to a part blank with a diameter of 550mm;

[0065] In the forging process, the oxide skin on the surface of the H62 brass ingot is cleaned every time the ingot is forged;

[0066] S2, part processing;

[0067] S2-1, rough turning the part blank obtained in step S1, and after the rough turning, heat treating the part blank at a temperature of 800 DEG C; during the rough turning, layering the part blank, and controlling the machining depth of each layer to be 10 mm;

[0068] S2-2, finish turning the part blank after the rough turning in step S1-1, and during the finish turning, dividing the process into 5 times of feeding, and controlling the cutting amount of each time to be 0.6 mm; after the finish turning, obtaining the CVD reaction chamber left chamber and the CVD reaction chamber right chamber; during the finish turning, machining layer by layer around the isohypse ring line composed of all points at the same height of the part blank, and controlling the layer distance and the cutting width of each layer to be 4 mm;

[0069] S3, welding

[0070] welding the CVD reaction chamber left chamber and the CVD reaction chamber right chamber obtained in step S2-2, obtaining a CVD reaction chamber preliminary body, and then straightening the CVD reaction chamber preliminary body, so that the inner and outer diameter error of the CVD reaction chamber preliminary body is 0.2 mm;

[0071] S4, surface treatment

[0072] polishing and grinding the CVD reaction chamber preliminary body after the straightening in step S3, then grinding with grinding paste until the surface roughness of the inner wall of the CVD reaction chamber preliminary body reaches Ra0.5, and finally cleaning the CVD reaction chamber preliminary body, so that a CVD reaction chamber mirror surface structure finished product is obtained.

[0073] Example 4

[0074] A CVD reaction chamber mirror surface structure processing method for semiconductor, comprising the following steps:

[0075] S1, forging

[0076] selecting H62 brass ingot as raw material for heating and forging, placing the H62 brass ingot into a vacuum furnace and heating to 700 DEG C, and then forging 10 times, so that the H62 brass ingot is forged from a φ200 mm to a φ550 mm part blank;

[0077] During the forging process, the oxide skin on the surface of the H62 brass ingot is cleaned every time the forging is performed;

[0078] S2, part machining

[0079] S2-1, rough turning the part blank obtained in step S1, and after the rough turning, heat treating the part blank at a temperature of 500 DEG C;

[0080] S2-2, finish turning the part blank after the rough turning in step S1-1, and during the finish turning, dividing the process into 3 times of feeding, and controlling the cutting amount of each time to be 0.4 mm; after the finish turning, obtaining the CVD reaction chamber left chamber and the CVD reaction chamber right chamber;

[0081] S3, welding

[0082] The left chamber and the right chamber of the CVD reaction chamber obtained in step S2-2 are subjected to a welding process to obtain a CVD reaction chamber preliminary body, and then the CVD reaction chamber preliminary body is subjected to a straightening process to make the inner and outer diameter error of the CVD reaction chamber preliminary body be 0.2mm;

[0083] S4, surface treatment;

[0084] The CVD reaction chamber preliminary body subjected to the straightening process in step S3 is subjected to a polishing process, in which sandpaper from coarse to fine is used for polishing, and roughness detection is performed on the CVD reaction chamber preliminary body after each polishing; then the CVD reaction chamber preliminary body is polished with polishing paste until the surface roughness of the inner wall of the CVD reaction chamber preliminary body reaches Ra0.8, and finally the CVD reaction chamber preliminary body is cleaned to obtain a CVD reaction chamber mirror surface structure finished product;

[0085] In the cleaning of the CVD reaction chamber preliminary body, first, the CVD reaction chamber preliminary body is placed in kerosene for ultrasonic cleaning, the ultrasonic frequency is controlled to be 20kHz, the time is controlled to be 20min, and the temperature is controlled to be 8℃; then the CVD reaction chamber preliminary body is placed in an isopropanol solution for ultrasonic cleaning, the ultrasonic frequency is controlled to be 35kHz, the time is controlled to be 20min, and the temperature is controlled to be 13℃; finally, the CVD reaction chamber preliminary body is dried at a temperature of 110℃ for 45min.

[0086] Example 5

[0087] A CVD reaction chamber mirror surface structure processing method for semiconductor, comprising the following steps:

[0088] S1, forging;

[0089] H62 brass ingots are selected as raw materials for heating and forging, the H62 brass ingots are preheated to 350℃, then the H62 brass ingots are placed in a vacuum furnace and heated to 950℃, and then 10 times of forging is performed to forge the H62 brass ingots from φ200mm to φ550mm part blanks; the part blanks are sealed and placed in an ammonia container for 12h, and the part blanks are controlled not to contact with the ammonia;

[0090] During the forging process, the oxide skin on the surface of the H62 brass ingot is cleaned after each forging;

[0091] S2, part processing;

[0092] S2-1, rough turning is performed on the part blank obtained in step S1, and after rough turning is completed, the part blank is subjected to heat treatment at a temperature of 700℃;

[0093] S2-2, finish turning the part blank after the rough turning of step S1-1, the finish turning process is divided into 4 times of feeding, and the cutting amount of each time is controlled to be 0.5mm; the CVD reaction chamber left chamber and the CVD reaction chamber right chamber are obtained after the finish turning is completed;

[0094] S3, welding

[0095] The CVD reaction chamber left chamber and the CVD reaction chamber right chamber obtained in step S2-2 are subjected to welding treatment to obtain a CVD reaction chamber preliminary body, and then the CVD reaction chamber preliminary body is subjected to shape correction treatment, so that the inner and outer diameter error of the CVD reaction chamber preliminary body is 0.1mm;

[0096] S4, surface treatment;

[0097] The CVD reaction chamber preliminary body after the shape correction treatment of step S3 is subjected to polishing and grinding, then the inner wall surface roughness of the CVD reaction chamber preliminary body is ground to Ra0.6 by using grinding paste, and finally the CVD reaction chamber preliminary body is cleaned, so that the CVD reaction chamber mirror surface structure finished product is obtained.

[0098] Example 6

[0099] A semiconductor CVD reaction chamber mirror surface structure processing method, comprising the following steps:

[0100] S1, forging;

[0101] H62 brass ingot is selected as the raw material for heating and forging, the H62 brass ingot is placed in a vacuum furnace and heated to 1250℃, and then 10 times of forging is performed, and the H62 brass ingot is forged from φ200mm to a part blank of φ550mm;

[0102] During the forging process, the oxide skin on the surface of the H62 brass ingot is cleaned every time the forging is performed;

[0103] S2, part processing;

[0104] S2-1, rough turning the part blank obtained in step S1, and then heat treating the part blank at a temperature of 800℃;

[0105] S2-2, finish turning the part blank after the rough turning of step S1-1, the finish turning process is divided into 5 times of feeding, and the cutting amount of each time is controlled to be 0.6mm; the CVD reaction chamber left chamber and the CVD reaction chamber right chamber are obtained after the finish turning is completed;

[0106] S3, welding

[0107] The CVD reaction chamber left chamber and the CVD reaction chamber right chamber obtained in step S2-2 are subjected to welding treatment to obtain a CVD reaction chamber preliminary body, and then the CVD reaction chamber preliminary body is subjected to shape correction treatment, so that the inner and outer diameter error of the CVD reaction chamber preliminary body is 0.2mm;

[0108] S4, surface treatment;

[0109] The CVD reaction cavity primary body after the step S3 is polished, then is polished by using the polishing paste until the surface roughness of the inner wall of the CVD reaction cavity primary body reaches Ra0.5, and finally the CVD reaction cavity primary body is cleaned to obtain the CVD reaction cavity mirror surface structure product. Finally, the CVD reaction cavity mirror surface structure is anodized. The anodization is carried out in a mixed solution containing 100 g / l sulfuric acid, 10-30 g / l oxalic acid and 5 g / l glycerol at a temperature of 15°C. After the anodization is completed, the CVD reaction cavity mirror surface structure is exposed to neutral salt spray for 12 h.

[0110] Example 7

[0111] A processing method of a CVD reaction cavity mirror surface structure for semiconductor, comprising the following steps:

[0112] S1, forging;

[0113] H62 brass ingot is selected as the raw material for heating forging. The H62 brass ingot is preheated to 550°C, then is placed in a vacuum furnace and heated to 1250°C, and then is forged for 10 times to forge the H62 brass ingot from φ200 mm to a part blank of φ550 mm. Finally, the part blank is sealed and placed in an ammonia container for 19 h, and the part blank is controlled not to contact with the ammonia water.

[0114] During the forging process, the oxide skin on the surface of the H62 brass ingot is cleaned after each forging. During the first to fourth forging process, the forging speed is controlled to be 50 m / min. During the fourth to seventh forging process, the forging speed is controlled to be 1500 m / min. During the seventh to tenth forging process, the forging speed is controlled to be 220 m / min.

[0115] S2, part processing;

[0116] S2-1, the part blank obtained in the step S1 is rough turned, and after the rough turning is completed, the part blank is heat treated at a temperature of 800°C. During the rough turning, the part blank is layered and rough turned, and the processing depth of each layer is controlled to be 5 mm.

[0117] S2-2, the part blank after the rough turning in the step S1-1 is finish turned. The finish turning process is divided into 5 times of feeding, and the cutting amount of each time is controlled to be 0.4 mm. After the finish turning is completed, the CVD reaction cavity left chamber and the CVD reaction cavity right chamber are obtained. During the finish turning, the tool is processed layer by layer around the same height of all points of the part blank to form an isohypse ring line, and the layer distance and the cutting width of each layer are controlled to be 2 mm.

[0118] S3, welding

[0119] Welding the left chamber and the right chamber of the CVD reaction cavity obtained in step S2-2 to obtain a CVD reaction cavity preliminary body, and then performing a straightening treatment on the CVD reaction cavity preliminary body to make the inner and outer diameter error of the CVD reaction cavity preliminary body be 0.1 mm;

[0120] S4, surface treatment;

[0121] Performing polishing on the CVD reaction cavity preliminary body after the straightening treatment in step S3, using sandpaper from coarse to fine to polish, and performing roughness detection on the CVD reaction cavity preliminary body after each polishing; then using polishing paste to polish until the surface roughness of the inner wall of the CVD reaction cavity preliminary body reaches Ra0.5, and finally cleaning the CVD reaction cavity preliminary body to obtain a CVD reaction cavity mirror surface structure product; finally, performing an anodization on the CVD reaction cavity mirror surface structure, the anodization is performed in a mixed solution containing 250 g / l sulfuric acid, 30 g / l oxalic acid and 30 g / l glycerol at a temperature of 40℃; after the anodization is completed, exposing the CVD reaction cavity mirror surface structure to neutral salt spray for 20 h;

[0122] During the cleaning of the CVD reaction cavity preliminary body, first, placing the CVD reaction cavity preliminary body into kerosene for ultrasonic cleaning, controlling the ultrasonic frequency to be 30 kHz, the time to be 30 min and the temperature to be 12℃; then placing the CVD reaction cavity preliminary body into an isopropyl alcohol solution for ultrasonic cleaning, controlling the ultrasonic frequency to be 45 kHz, the time to be 30 min and the temperature to be 16℃; finally, drying the CVD reaction cavity preliminary body at a temperature of 125℃ for 55 min.

[0123] Example 8

[0124] The application of the semiconductor CVD reaction cavity mirror surface structure processing method is described in this example, which is based on any one of the semiconductor CVD reaction cavity mirror surface structure processing methods in examples 1-7, and is applied to the processing of the CVD reaction cavity mirror surface structure.

[0125] Test example

[0126] The performance of the CVD reaction cavity mirror surface structure products processed by the examples 1-7 of the application and the prior art is detected respectively, and the detection results are shown in Table 1:

[0127] Table 1: Influence of the method of each example on the performance of the CVD reaction cavity mirror surface structure product

[0128]

[0129]

[0130] From the data in Table 1, it can be seen that the CVD reaction cavity mirror surface structure product processed by the application has better performance than the prior art.

[0131] Compared with example 1, in example 2, the H62 brass ingot is forged in sections, and the forging speed of each section is controlled, so that the internal grain refinement of the H62 brass ingot is more uniform.

[0132] Compared with example 1, in example 3, the part blank is roughed in layers, which can effectively reduce the tool wear rate and improve the processing efficiency of the part blank; the contour line winding finishing method can avoid the problems of processing cycle extension or excessive allowance affecting the processing quality caused by the interference of the allowance of the next layer during finishing;

[0133] Compared with example 1, in example 4, the CVD reaction cavity primary body is gradually polished and ground, which is beneficial to improve the surface finish of the CVD reaction cavity primary body, thereby improving the use effect; the CVD reaction cavity primary body is ultrasonically cleaned with different solvents and ultrasonic frequencies, which is beneficial to improve the cleaning comprehensiveness and thoroughness of the CVD reaction cavity primary body, and improve the corrosion resistance of the CVD reaction cavity mirror surface structure;

[0134] Compared with example 1, in example 5, the part blank is sealed and placed in an ammonia container, which is convenient for detecting the internal defects such as cracks of the part blank, and avoids affecting the use effect of the CVD reaction cavity mirror surface structure after processing; the H62 brass ingot is preheated, which is beneficial to improve the forgeability of the H62 brass ingot and make the internal structure more uniform;

[0135] Compared with example 1, in example 6, the CVD reaction cavity mirror surface structure is subjected to anodic oxidation treatment, which improves the corrosion resistance of the CVD reaction cavity mirror surface structure and prolongs its service life.

[0136] Compared with examples 1-6, in example 7, the process parameters are optimized during the processing of the CVD reaction cavity mirror surface structure, so that the performance of the CVD reaction cavity mirror surface structure reaches the best state.

Claims

1. A method for processing a mirror surface of a CVD reaction chamber for semiconductor, characterized by, The method comprises the following steps: S1, forging; H62 brass ingots are selected as raw materials for heating and forging. The H62 brass ingots are heated to 700-1250℃ in a vacuum furnace, and then forged for 10 times to forge the H62 brass ingots from φ200mm to φ550mm part blanks; During the forging process, the oxide skin on the surface of the H62 brass ingots is cleaned after each forging; S2, part processing; S2-1, the part blank obtained in step S1 is roughed, and after the roughing, the part blank is heat treated at a temperature of 500-800℃; S2-2, the part blank roughed in step S1-1 is finished, the finishing process is divided into 3-5 times of feeding, and the cutting amount of each time is controlled to be 0.4-0.6mm; the CVD reaction chamber left chamber and the CVD reaction chamber right chamber are obtained after the finishing; S3, welding The CVD reaction chamber left chamber and the CVD reaction chamber right chamber obtained in step S2-2 are welded to obtain a CVD reaction chamber preliminary body, and then the CVD reaction chamber preliminary body is straightened to make the inner and outer diameter error of the CVD reaction chamber preliminary body be ≤0.2mm; S4, surface treatment; The CVD reaction chamber preliminary body after the straightening in step S3 is polished and ground, then is ground by using grinding paste until the surface roughness of the inner wall of the CVD reaction chamber preliminary body reaches Ra0.5-0.8, and finally the CVD reaction chamber preliminary body is cleaned to obtain a CVD reaction chamber mirror surface structure finished product; In step S1, the forging speed is controlled to be 50-70m / min during the first to fourth forging processes, the forging speed is controlled to be kept at 150-200m / min during the fourth to seventh forging processes, and the forging speed is controlled to be kept at 220-300m / min during the seventh to tenth forging processes; In step S2-1, the part blank is layered and roughed during the roughing, and the processing depth of each layer is controlled to be 5-10mm; in step S2-2, the tool is processed layer by layer around the same height of all points of the part blank to form an isohypse ring line, and the layer distance and the cutting width of each layer are controlled to be 2-4mm.

2. The method of claim 1, wherein the CVD reaction chamber mirror surface is formed by a method comprising: forming a first layer of a first material on the substrate; forming a second layer of a second material on the first layer; and forming a third layer of a third material on the second layer. In step S4, the polishing and grinding are performed by using sandpaper from coarse to fine, and the roughness of the CVD reaction chamber preliminary body is detected after each polishing and grinding.

3. The method of claim 1, wherein the CVD reaction chamber mirror surface is formed by a method comprising: forming a first layer of a first material on the substrate; forming a second layer of a second material on the first layer; and forming a third layer of a third material on the second layer. After step S1 is completed, the part blank is sealed and placed in an ammonia container for 12-19h, and the part blank is controlled not to contact with the ammonia.

4. The method of claim 1, wherein the CVD reaction chamber mirror surface is formed by a method comprising: forming a first layer of a first material on a substrate; forming a second layer of a second material on the first layer; and forming a third layer of a third material on the second layer. Before step S1 is performed, the H62 brass ingots are preheated to 350-550℃.

5. The method for fabricating a CVD reaction chamber mirror structure for semiconductors according to claim 1, characterized in that, After step S4 is completed, the CVD reaction chamber mirror surface structure is anodized in a mixed solution containing 100-250g / l sulfuric acid, 10-30g / l oxalic acid and 5-30g / l glycerol at a temperature of 15-40℃; and after the anodizing is completed, the CVD reaction chamber mirror surface structure is exposed to neutral salt spray for 12-20h.

6. The method of claim 1, wherein the CVD reaction chamber mirror surface is formed by a method comprising: forming a first layer of a first material on a substrate; forming a second layer of a second material on the first layer; and forming a third layer of a third material on the second layer. In step S4, when the CVD reaction cavity is cleaned, first, the CVD reaction cavity is placed in kerosene for ultrasonic cleaning, the ultrasonic frequency is controlled to be 20-30 kHz, the time is controlled to be 20-30 min, and the temperature is controlled to be 8-12 ℃; then the CVD reaction cavity is placed in an isopropyl alcohol solution for ultrasonic cleaning, the ultrasonic frequency is controlled to be 35-45 kHz, the time is controlled to be 20-30 min, and the temperature is controlled to be 13-16 ℃; finally, the CVD reaction cavity is dried at a temperature of 110-125 ℃ for 45-55 min.

7. A method for fabricating a CVD reaction chamber mirror structure for semiconductors according to any one of claims 1-6, characterized in that, The processing method is applied to processing of a mirror surface structure of a CVD reaction cavity.

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