Micro device substrate and light emitting chip transfer method

Abstract

The application provides a micro-device substrate and a light-emitting chip transfer method, and relates to the technical field of display. The micro-device substrate comprises a substrate, a light-emitting chip and at least two support columns, the light-emitting chip and the support columns are located on the same side of the substrate; the height of the support column is greater than the thickness of the light-emitting chip; the support column comprises a first support column and a second support column which are arranged in a stack, the second support column is located on the side of the first support column away from the substrate; and the elastic modulus of the second support column is less than that of the first support column. When the side of the micro-device substrate provided with the light-emitting chip is pressed, the support column is pressed first, thereby providing a certain protection for the light-emitting chip; the second support column has a certain deformable space, which is beneficial to prevent the light-emitting chip from being extruded, thereby being beneficial to improve the abnormal conditions such as the deformation of the chip electrode and the breakage of the light-emitting chip caused by the extrusion of the light-emitting chip, and further being beneficial to reduce the abnormal problems of the light-emitting chip and improve the product yield.

Description

Technical Field

[0001] This disclosure relates to the field of display technology, and in particular to a method for transferring a microdevice substrate and a light-emitting chip. Background Technology

[0002] Micro-LED displays are displays that integrate a high-density array of tiny LEDs on a substrate to display images. Due to their advantages such as high quality, thin design, and low power consumption, they are considered the next generation of displays and are gradually becoming the mainstream in display devices. However, because of the small size of micro-LEDs, the manufacturing process of micro-LED displays presents challenges such as deformation or even breakage of the light-emitting chips under pressure.

[0003] Therefore, how to solve the above problems has become one of the urgent technical issues to be addressed at this stage. Summary of the Invention

[0004] To address the aforementioned technical problems, this disclosure provides a method for transferring a microdevice substrate and a light-emitting chip, thereby improving the problem of light-emitting chips deforming or even breaking under pressure.

[0005] In a first aspect, this disclosure provides a microdevice substrate, comprising:

[0006] A substrate, a light-emitting chip, and at least two support pillars, wherein the light-emitting chip and the support pillars are located on the same side of the substrate;

[0007] Along the first direction, the height of the support pillar is greater than the thickness of the light-emitting chip, and the first direction is perpendicular to the plane where the substrate is located;

[0008] The support pillar includes a first support pillar and a second support pillar stacked together, wherein the second support pillar is located on the side of the first support pillar away from the substrate;

[0009] The elastic modulus of the second support column is less than that of the first support column.

[0010] Secondly, this application provides a method for transferring light-emitting chips, including:

[0011] A microdevice substrate is provided, the microdevice substrate including a substrate, a light-emitting chip, and at least two support pillars, the light-emitting chip and the support pillars being located on the same side of the substrate; along a first direction, the height of the support pillars is greater than the thickness of the light-emitting chip, the first direction being perpendicular to the plane of the substrate; the support pillars include a first support pillar and a second support pillar stacked together, the second support pillar being located on the side of the first support pillar away from the substrate; the elastic modulus of the second support pillar is less than the elastic modulus of the first support pillar;

[0012] The light-emitting chip is transferred to the transient substrate through the support pillars on the microdevice substrate.

[0013] The technical solution provided in this disclosure has the following advantages compared with the prior art:

[0014] This application provides a method for transferring a microdevice substrate and a light-emitting chip. The microdevice substrate includes a substrate, a light-emitting chip, and at least two support pillars. The light-emitting chip and the support pillars are located on the same side of the substrate. The height of the support pillars is greater than the thickness of the light-emitting chip. When the side of the microdevice substrate where the light-emitting chip is located is pressed, the support pillars are pressed first, providing some protection for the light-emitting chip. The support pillars include a first support pillar and a second support pillar stacked together. The first support pillar is located between the substrate and the second support pillar. The elastic modulus of the second support pillar is less than that of the first support pillar. When the support pillar is pressed, the second support pillar has a certain deformable space, which helps to prevent the light-emitting chip from being squeezed. This helps to improve abnormal situations such as chip electrode deformation and light-emitting chip breakage caused by the squeezing of the light-emitting chip, thereby reducing abnormal problems of the light-emitting chip and improving product yield. Attached Figure Description

[0015] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure.

[0016] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 The image shown is a top view of a microdevice substrate provided in an embodiment of this application;

[0018] Figure 2 The following is along Figure 1 A schematic diagram of a cross-section of AA';

[0019] Figure 3 The diagram shown is a top view of another microdevice substrate provided in an embodiment of this application;

[0020] Figure 4 The following is along Figure 1 Another cross-sectional schematic diagram of AA';

[0021] Figure 5 The diagram shown is a schematic representation of the process of transferring a light-emitting chip from a microdevice substrate according to an embodiment of this application.

[0022] Figure 6 The diagram shown is another schematic diagram of the process of transferring the light-emitting chip from the microdevice substrate provided in the embodiment of this application;

[0023] Figure 7 The following is along Figure 1 Another cross-sectional schematic diagram of AA';

[0024] Figure 8 The following is along Figure 1 Another schematic diagram of the cross section of AA';

[0025] Figure 9 The image shown is a top view schematic diagram of another microdevice substrate provided in an embodiment of this application;

[0026] Figure 10 The image shown is a top view schematic diagram of another microdevice substrate provided in an embodiment of this application;

[0027] Figure 11 The following is along Figure 1 Another schematic diagram of the cross section of AA';

[0028] Figure 12 The following is along Figure 1 Another schematic diagram of the cross section of AA';

[0029] Figure 13 The following is along Figure 1 Another schematic diagram of the cross section of AA';

[0030] Figure 14 The diagram shown is a flowchart illustrating a light-emitting chip transfer method provided in an embodiment of this application.

[0031] Figure 15 As shown Figure 14 A detailed flowchart of step S02;

[0032] Figure 16 As shown Figure 15 A schematic diagram of a structure in step S021;

[0033] Figure 17 The following is the execution. Figure 15 A schematic diagram of a structure following step S023;

[0034] Figure 18 The following is the execution. Figure 15 A schematic diagram of a structure following step S024;

[0035] Figure 19 As shown Figure 15 A detailed flowchart of step S024;

[0036] Figure 20The following is the execution. Figure 15 A schematic diagram of a structure after step S025. Detailed Implementation

[0037] To better understand the above-mentioned objectives, features, and advantages of this disclosure, the solutions disclosed herein will be further described below. It should be noted that, unless otherwise specified, the embodiments and features described herein can be combined with each other.

[0038] Numerous specific details are set forth in the following description in order to provide a full understanding of this disclosure, but this disclosure may also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only some, and not all, of the embodiments of this disclosure.

[0039] The inventors discovered in their research that in the fabrication process of micro LED displays, several light-emitting chips are usually fabricated on a substrate first, and then the light-emitting chips are transferred to the target substrate through a multi-step transfer process. During the transfer of the light-emitting chips to the target substrate, the light-emitting chips need to be temporarily bonded to the transient substrate. During the temporary bonding process, the chip electrodes of the light-emitting chips may be squeezed and deformed, leading to differences in subsequent bonding. Furthermore, the deformation of the chip electrodes may cause sidewall leakage current.

[0040] Therefore, how to improve the problem of light-emitting chips deforming or even breaking under pressure has become one of the urgent technical problems to be solved at this stage.

[0041] To address the aforementioned technical problems, this application provides a method for transferring a microdevice substrate and a light-emitting chip, thereby improving the problem of light-emitting chips deforming or even breaking under pressure.

[0042] Figure 1 The image shown is a top view schematic diagram of a microdevice substrate provided in an embodiment of this application. Figure 2 The following is along Figure 1 Please refer to a schematic diagram of a cross-section of AA'. Figure 1 and Figure 2 This application provides a microdevice substrate 100, comprising:

[0043] The substrate 10, the light-emitting chip 20, and at least two support pillars 30 are located on the same side of the substrate 10.

[0044] Along the first direction D1, the height of the support pillar 30 is greater than the thickness of the light-emitting chip 20, and the first direction D1 is perpendicular to the plane where the substrate 10 is located.

[0045] The support pillar 30 includes a first support pillar 31 and a second support pillar 32 stacked together, with the second support pillar 32 located on the side of the first support pillar 31 away from the substrate 10;

[0046] The elastic modulus of the second support column 32 is less than that of the first support column 31.

[0047] Specifically, this application provides a microdevice substrate 100, which includes a substrate 10, a light-emitting chip 20, and at least two support pillars 30. The light-emitting chip 20 is located on one side of the substrate 10. On the side of the substrate 10 where the light-emitting chip 20 is located, there is also a support pillar 30. The height of the support pillar 30 along the first direction D1 is greater than the thickness of the light-emitting chip 20 along the first direction D1. In this way, the support pillar 30 provides a certain degree of protection for the light-emitting chip 20, which helps to prevent the light-emitting chip 20 from being squeezed. This helps to improve abnormal situations such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by squeezing, thereby reducing abnormal problems of the light-emitting chip 20 and improving product yield.

[0048] The support pillar 30 includes a first support pillar 31 and a second support pillar 32 stacked along a first direction D1. The first support pillar 31 is located between the substrate 10 and the second support pillar 32. The elastic modulus of the second support pillar 32 is smaller than that of the first support pillar 31, that is, the second support pillar 32 is more elastic than the first support pillar 31. In an optional embodiment, during the temporary bonding process between the light-emitting chip 20 and the transient substrate, the microdevice substrate 100 temporarily bonds one side of the light-emitting chip 20 to the transient substrate. The support pillar 30 deforms under the compression of the transient substrate. The support pillar 30 provides some protection for the light-emitting chip 20, helping to prevent electrode deformation or chip breakage due to pressure. It is understandable that when the side of the microdevice substrate 100 where the light-emitting chip 20 is located is compressed, the support pillar 30 provides support, which helps to prevent the light-emitting chip 20 from being compressed. The elastic modulus of the second support pillar 32 is less than that of the first support pillar 31, meaning the elasticity of the second support pillar 32 is greater than that of the first support pillar 31. This means that when the support pillar 30 is compressed, the deformation of the second support pillar 32 is greater than that of the first support pillar 31. This allows the first support pillar 31 to provide some support for the second support pillar 32, and also helps to prevent the overall elasticity of the support pillar 30 from being too large, which would result in the height of the support pillar 30 after compression being less than the height of the light-emitting chip 20, thus weakening its support and protection effect on the light-emitting chip 20. Simultaneously, the second support pillar 32 has a certain degree of elasticity. The transient substrate and the second support pillar 32 of the microdevice substrate 100 contact first, and the second support pillar 32 compresses and deforms until the light-emitting chip 20 bonds to the transient substrate. Therefore, the elastic setting of the second support pillar 32 also facilitates smooth contact and bonding between the transient substrate and the light-emitting chip 20.

[0049] It should be noted that the second support pillar 32 can be made of an elastic organic material, such as photoresist. Photoresist is a commonly used material in the manufacturing process of display products. When photoresist is used to make the second support pillar 32, there is no need to introduce new materials into the microdevice substrate 100.

[0050] It should also be noted that the accompanying drawings are for illustrative purposes only and do not represent the actual size and structure of the microdevice substrate 100. For example, the circular shape of the microdevice substrate 100 in the drawings is for illustrative purposes only; it could also be rectangular or other shapes. Furthermore, the accompanying drawings... Figure 1 In the microdevice substrate 100, multiple support pillars 30 are arranged around the light-emitting chip 20. The orthographic projection of the support pillars 30 onto the substrate 10 is rectangular. This application is only illustrating this example, but it is not limited thereto. The number, position, and shape of the support pillars 30 can be set according to actual conditions. For example, Figure 3 The diagram shown is a top view of another microdevice substrate provided in an embodiment of this application. Please refer to... Figure 3 The support post 30 can also be set only at the edge of the substrate 10, and the orthogonal projection of the support post 30 on the substrate 10 can also be a circle.

[0051] Please refer to Figure 2 This application provides an optional implementation in which the light-emitting chip 20 includes a light-emitting substrate 21 and a chip electrode 22, the chip electrode 22 being located on the side of the light-emitting substrate 21 away from the substrate 10; the distance a11+a21 between the surface of the second support post 32 away from the substrate 10 and the substrate 10 is greater than the distance b11+b21 between the surface of the chip electrode 22 away from the substrate 10 and the substrate 10.

[0052] Specifically, the microdevice substrate 100 includes a substrate 10, a light-emitting chip 20, and support pillars 30. The light-emitting chip 20 and support pillars 30 are both located on the same side of the substrate 10. The light-emitting chip 20 includes a light-emitting substrate 21 and a chip electrode 22. The light-emitting substrate 21 is located between the substrate 10 and the chip electrode 22. The support pillars 30 include a first support pillar 31 and a second support pillar 32. The first support pillar 31 is located between the substrate 10 and the second support pillar 32. In this embodiment, the distance a11+a21 between the surface of the second support pillar 32 furthest from the substrate 10 and the substrate 10 is greater than the distance from the chip electrode 22 furthest from the substrate. The distance between one side surface of the second support post 32 and the substrate 10 is b11+b21. That is, the distance between the second support post 32 and the substrate 10 is greater on the side surface of the second support post 32 that is away from the substrate 10 than on the side surface of the chip electrode 22 that is away from the substrate 10. Therefore, when the side of the microdevice substrate 100 where the light-emitting chip 20 is located is pressed, the second support post 32 is pressed first, thereby providing a certain degree of protection for the light-emitting chip 20. This helps to improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by the compression of the light-emitting chip 20, thereby reducing abnormal problems of the light-emitting chip 20 and improving product yield.

[0053] Figure 4 The following is along Figure 1 Please refer to another cross-sectional diagram of AA'. Figure 4 This application provides an optional implementation in which the height a12 of the first support column 31 along the first direction D1 is equal to the thickness b12 of the light-emitting substrate 21 along the first direction D1.

[0054] Specifically, the microdevice substrate 100 provided in this application includes a substrate 10, a light-emitting chip 20, and a support pillar 30. The light-emitting chip 20 and the support pillar 30 are located on the same side of the substrate 10. The light-emitting chip 20 includes a light-emitting substrate 21 and a chip electrode 22. The light-emitting substrate 21 is located between the substrate 10 and the chip electrode 22. The support pillar 30 includes a first support pillar 31 and a second support pillar 32. The first support pillar 31 is located between the substrate 10 and the second support pillar 32. The height of the first support pillar 31 along the first direction D1 is a12, and the thickness of the light-emitting substrate 21 along the first direction D1 is b12. In this embodiment, along the first direction D1, the height of the first support post 31 is equal to the thickness of the light-emitting substrate 21, that is, a12 = b12. With this configuration, the first support post 31 and the light-emitting substrate 21 can be fabricated in the same process. In other words, the microdevice substrate 100 provided in this embodiment helps to improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by pressure on the light-emitting chip 20. At the same time, the first support post 31 and the light-emitting substrate 21 can be fabricated with the same material and process, without the need to introduce different manufacturing processes and materials, which helps to simplify the manufacturing process and thus improve production efficiency.

[0055] Please refer to Figure 2 Another optional embodiment provided in this application is that the microdevice substrate 100 includes a substrate 10, a light-emitting chip 20, and a support pillar 30. The light-emitting chip 20 and the support pillar 30 are located on the same side of the substrate 10. The light-emitting chip 20 includes a light-emitting substrate 21 and a chip electrode 22. The light-emitting substrate 21 is located between the substrate 10 and the chip electrode 22. The support pillar 30 includes a first support pillar 31 and a second support pillar 32. The first support pillar 31 is located between the substrate 10 and the second support pillar 32. The height of the first support pillar 31 along the first direction D1 is a11. The height of the light-emitting substrate 21 along the first direction D1 is a11. The thickness of direction D1 is b11. In this embodiment, the height of the first support column 31 is greater than the thickness of the light-emitting substrate 21, that is, a11>b11. With this setting, since the elasticity of the first support column 31 is less than that of the second support column 32, the support performance of the first support column 31 is better. Setting the height of the first support column 31 to be greater than the thickness of the light-emitting substrate 21 further helps to improve the protection effect of the support column 30 on the light-emitting chip 20, thereby helping to improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by pressure on the light-emitting chip 20.

[0056] Please refer to Figure 4 In this application, an optional implementation is provided in which the height of the second support column 32 along the first direction D1 is greater than the thickness of the chip electrode 22 along the first direction D1.

[0057] Specifically, the microdevice substrate 100 provided in this application includes a substrate 10, a light-emitting chip 20, and a support pillar 30. The light-emitting chip 20 and the support pillar 30 are located on the same side of the substrate 10. The light-emitting chip 20 includes a light-emitting substrate 21 and a chip electrode 22. The light-emitting substrate 21 is located between the substrate 10 and the chip electrode 22. The support pillar 30 includes a first support pillar 31 and a second support pillar 32. The first support pillar 31 is located between the substrate 10 and the second support pillar 32. The height of the first support pillar 31 along the first direction D1 is a12, the height of the second support pillar 32 along the first direction D1 is a22, the thickness of the light-emitting substrate 21 along the first direction D1 is b12, and the thickness of the chip electrode 22 along the first direction D1 is b22. In this embodiment, the height of the first support post 31 is equal to the thickness of the light-emitting substrate 21, and the height of the second support post 32 is greater than the thickness of the chip electrode 22, i.e., a12 = b12, a22 > b22. Therefore, the total height of the support posts 30 is greater than the total thickness of the light-emitting chip 20, i.e., a12 + a22 > b12 + b22. With this configuration, since the height of the support post 30 is greater than the thickness of the light-emitting chip 20, when the side of the microdevice substrate 100 where the light-emitting chip 20 is located is subjected to pressure, the second support post 32 is subjected to pressure first, which provides a certain degree of protection for the light-emitting chip 20 and helps to prevent the light-emitting chip 20 from being subjected to pressure. This helps to improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by pressure on the light-emitting chip 20. At the same time, in this embodiment, the first support post 31 and the light-emitting substrate 21 can be fabricated in the same process, which helps to simplify the manufacturing process and improve production efficiency.

[0058] Please continue to refer to this. Figure 4This application provides an optional embodiment in which the microdevice substrate 100 includes a substrate 10, a light-emitting chip 20, and support pillars 30. The light-emitting chip 20 and the support pillars 30 are located on the same side of the substrate 10. The light-emitting chip 20 includes a light-emitting substrate 21 and a chip electrode 22. The light-emitting substrate 21 is located between the substrate 10 and the chip electrode 22. The support pillars 30 include a first support pillar 31 and a second support pillar 32. The first support pillar 31 is located between the substrate 10 and the second support pillar 32. The height of the first support pillar 31 along the first direction D1 is a12, the height of the second support pillar 32 along the first direction D1 is a22, the thickness of the light-emitting substrate 21 along the first direction D1 is b12, and the thickness of the chip electrode 22 along the first direction D1 is b22. In this embodiment, 0 < [(a12+a22)-(b12+b22)] / (b12+b22) ≤ 8%, that is, b12+b22 < a12+a22 ≤ 1.08×(b12+b22). In other words, the total height of the support column 30 is greater than the total thickness of the light-emitting chip 20, and less than or equal to 1.08 times the total thickness of the light-emitting chip 20. The height of the support column 30 is set within the above range, which is beneficial for the support column 30 to provide a certain degree of protection for the light-emitting chip 20, improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by pressure on the light-emitting chip 20, and also helps to reduce the total height of the support column 30, thereby helping to thin the micro-device substrate 100 and reduce production costs.

[0059] It should be noted that the above are embodiments of the height of the first support column 31, the height of the second support column 32, the thickness of the light-emitting substrate 21 and the thickness of the chip electrode 22 provided in this application. This application is only using this as an example for illustration and is not limited thereto. As long as the height of the support column 30 is greater than the thickness of the light-emitting chip 20.

[0060] Figure 5 The diagram shown is a schematic representation of the process of transferring a light-emitting chip from a microdevice substrate according to an embodiment of this application. Please refer to [the diagram]. Figure 4 and Figure 5 This application provides an optional implementation in which the microdevice substrate 100 includes a first state and a second state. Figure 4 The image shows the microdevice substrate 100 in the first state. In the first state, the height of the second support post 32 along the first direction D1 is H0. Figure 5 The microdevice substrate 100 is shown in the second state. In the second state, the height of the second support post 32 along the first direction D1 is H1; H0>H1.

[0061] Specifically, the support pillars 30 in the microdevice substrate 100 provided in this application include a first support pillar 31 and a second support pillar 32. The elastic modulus of the second support pillar 32 is less than that of the first support pillar 31, that is, the elasticity of the second support pillar 32 is greater than that of the first support pillar 31. The microdevice substrate 100 includes a first state and a second state, please refer to... Figure 4 When the microdevice substrate 100 is in the first state, the side of the microdevice substrate 100 where the light-emitting chip 20 is disposed is not under pressure, and the second support post 32 is in an extended state. At this time, the height of the second support post 32 along the first direction D1 is H0; please refer to Figure 5 When the microdevice substrate 100 is in the second state, the side of the microdevice substrate 100 where the light-emitting chip 20 is disposed is under pressure, and the second support post 32 is in a compressed state. At this time, the height of the second support post 32 along the first direction D1 is H1. The height of the second support post 32 in the first state is greater than the height in the second state, that is, H0>H1. It can be seen that when the side of the microdevice substrate 100 where the light-emitting chip 20 is disposed is under pressure, the second support post 32 is first subjected to pressure and deforms, which provides a certain degree of protection for the light-emitting chip 20 and helps to prevent the light-emitting chip 20 from being under pressure. This helps to improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by pressure on the light-emitting chip 20.

[0062] It should be noted that, in order to improve the protection of the light-emitting chip 20, the height of the support post 30 is greater than the thickness of the light-emitting chip 20, regardless of whether the microdevice substrate 100 is in the first state or the second state. That is, regardless of whether the side of the microdevice substrate 100 where the light-emitting chip 20 is located is under pressure, the height of the support post 30 is greater than the thickness of the light-emitting chip 20.

[0063] Figure 6 The diagram shown is another schematic representation of the process of transferring a light-emitting chip from a microdevice substrate according to an embodiment of this application. Please refer to [the diagram]. Figures 4-6 This application provides an optional implementation method, which includes the process of transferring the light-emitting chip 20 to the first transient substrate 40:

[0064] First step, please refer to Figure 4 A microdevice substrate 100 is provided, which includes a substrate 10, a light-emitting chip 20, and a support pillar 30. The light-emitting chip 20 and the support pillar 30 are located on the same side of the substrate 10. The height of the support pillar 30 is greater than the thickness of the light-emitting chip 20. The support pillar 30 includes a first support pillar 31 and a second support pillar 32. The first support pillar 31 is located between the substrate 10 and the second support pillar 32. At this time, the microdevice substrate 100 is in a first state, that is, an unpressurized state, and the second support pillar 32 is in an extended state with a height of H0.

[0065] For the second step, please refer to... Figure 5 A first transient substrate 40 is provided, comprising a laser-emitting adhesive layer 42 and a first transient base 41. The side of the microdevice substrate 100 with the light-emitting chip 20 is positioned opposite the side of the first transient substrate 40 with the laser-emitting adhesive layer 42. The microdevice substrate 100 and the first transient substrate 40 are bonded together. At this time, the microdevice substrate 100 is in a second state, i.e., a compressed state, and the second support post 32 is in a compressed state with a height of H1. When the microdevice substrate 100 changes from the first state to the second state, the second support post 32 changes from an extended state to a compressed state, and the height of the second support post 32 decreases from H0 to H1.

[0066] Step 3, please refer to Figure 6 The substrate 10 is removed. During the above process, the light-emitting chip 20 is transferred from the microdevice substrate 100 to the first transient substrate 40. During the transfer, the side of the microdevice substrate 100 where the light-emitting chip 20 is located is pressed. The support pillar 30 provides a certain degree of protection for the light-emitting chip 20, which helps to prevent the light-emitting chip 20 from being pressed. This helps to improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by the pressure on the light-emitting chip 20, thereby helping to improve the product yield.

[0067] Figure 7 The following is along Figure 1 Please refer to another cross-sectional diagram of AA'. Figure 1 and Figure 7 Optionally, the arrangement density of the support pillars 30 in the region far from the center of the substrate 10 is greater than the arrangement density of the support pillars 30 in the region close to the center of the substrate 10.

[0068] Specifically, the microdevice substrate 100 provided in this application provides a certain degree of protection for the light-emitting chip 20 by providing a support pillar 30 on one side of the microdevice substrate 100 where the light-emitting chip 20 is disposed, thereby improving the pressure resistance of the light-emitting chip 20. The inventors discovered in their research that the edge region of the substrate 10 has a relatively large warpage; please refer to [reference needed]. Figure 7The edge region of the substrate 10 tilts upwards toward the side of the microdevice substrate 100 where the light-emitting chip 20 is disposed. When the side of the microdevice substrate 100 where the light-emitting chip 20 is disposed is subjected to pressure, the edge region of the substrate 10 will be subjected to pressure before the center region. Therefore, the region far from the center of the substrate 10 will be subjected to pressure first and the pressure will be greater. Therefore, this application provides an optional implementation in which the arrangement density of the support pillars 30 in the region far from the center of the substrate 10 (edge ​​region) is greater than the arrangement density of the support pillars 30 in the region close to the center of the substrate 10. With this arrangement, the arrangement density of the support pillars 30 is large in the region where the pressure is relatively severe, and the arrangement density of the support pillars 30 is small in the region where the pressure is relatively weak. This is more conducive to improving the overall pressure condition of the microdevice substrate 100, thereby helping to improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by pressure on the light-emitting chip 20.

[0069] It should be noted that, Figure 7 This is only to illustrate the warping and does not represent its actual structure.

[0070] Figure 8 The following is along Figure 1 For another cross-sectional diagram of AA', please refer to... Figure 8 This application provides an optional implementation in which the light-emitting substrate 21 and the first support pillar 31 both include an N-type layer 231, a light-emitting layer 232 and a P-type layer 233. The N-type layer 231 is located on one side of the substrate 10, the light-emitting layer 232 is located on the side of the N-type layer 231 away from the substrate 10, and the P-type layer 233 is located on the side of the light-emitting layer 232 away from the substrate 10.

[0071] Specifically, the microdevice substrate 100 provided in this application includes a substrate 10, a light-emitting chip 20, and a support pillar 30. The light-emitting chip 20 and the support pillar 30 are located on the same side of the substrate 10. The light-emitting chip 20 includes a light-emitting substrate 21 and a chip electrode 22. The light-emitting substrate 21 is located between the substrate 10 and the chip electrode 22. The support pillar 30 includes a first support pillar 31 and a second support pillar 32. The first support pillar 31 is located between the substrate 10 and the second support pillar 32. In this embodiment, the light-emitting substrate 21 and the first support pillar 31 are made of the same material, both including an N-type layer 231 and a light-emitting substrate 22. During fabrication, the light-emitting layer 232 and the P-type layer 233 are fabricated by first forming an N-type layer 231 on one side of the substrate 10, then forming a light-emitting layer 232 on the side of the N-type layer 231 away from the substrate 10, and then forming a P-type layer 233 on the side of the light-emitting layer 232 away from the N-type layer 231. In this embodiment, the first support pillar 31 is fabricated at the same time as the light-emitting substrate 21 of the light-emitting chip 20, that is, the light-emitting substrate 21 and the first support pillar 31 are fabricated in the same process. This arrangement helps to simplify the fabrication process of the microdevice substrate 100, thereby improving production efficiency and increasing production capacity.

[0072] It should be noted that the N-type layer 231 is used to provide electrons; the P-type layer 233 is used to provide holes; and the light-emitting layer 232 is the core region for generating light, emitting light through the recombination of electrons and holes. When a positive voltage is applied to the N-type layer 231 and the P-type layer 233, electrons and holes are injected into the light-emitting layer 232 from the N-type layer 231 and the P-type layer 233, respectively. Electrons and holes meet and recombine in the light-emitting layer 232, releasing energy in the recombination process. This energy is manifested in the form of photons, thereby generating light. The light-emitting layer 232 is usually composed of structures such as quantum wells. The band structure of the quantum well can effectively restrict the movement of electrons and holes, improve recombination efficiency, and thus enhance the light-emitting effect.

[0073] Figure 9 The diagram shown is a top view of another microdevice substrate provided in an embodiment of this application. Please refer to it. Figure 9 This application provides an optional implementation in which at least one support post 30 is included between two adjacent light-emitting chips 20.

[0074] Specifically, the microdevice substrate 100 provided in this application includes a substrate 10, a light-emitting chip 20, and a support pillar 30. The light-emitting chip 20 and the support pillar 30 are located on the same side of the substrate 10. When the side of the microdevice substrate 100 where the light-emitting chip 20 is located is pressed, the support pillar 30 provides a certain degree of protection for the light-emitting chip 20, which helps to prevent the light-emitting chip 20 from being pressed. In this embodiment, at least one support pillar 30 is included between two adjacent light-emitting chips 20, which means that each light-emitting chip 20 corresponds to at least one support pillar 30 to provide a certain degree of protection. This arrangement further helps to prevent the light-emitting chip 20 from being pressed, thereby helping to improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by the pressure on the light-emitting chip 20, and further helping to improve the product yield.

[0075] Figure 10 The diagram shown is a top view of another microdevice substrate provided in an embodiment of this application. Please refer to... Figure 10 Another optional implementation provided in this application is that at least three light-emitting chips 20 are included between two adjacent support columns 30.

[0076] Specifically, this embodiment provides a configuration of support pillars 30 and light-emitting chips 20. Three light-emitting chips 20 are arranged between two adjacent support pillars 30. When the side of the microdevice substrate 100 where the light-emitting chips 20 are located is subjected to pressure, the support pillars 30 provide some protection for the light-emitting chips 20, which helps prevent pressure on the light-emitting chips 20. This helps to improve abnormal problems such as deformation of the chip electrodes 22 and breakage of the light-emitting chips 20 caused by pressure. It should be noted that this application is only used as an example and is not limited thereto. The position and number of support pillars 30 can be set according to actual needs. It should also be noted that in this embodiment, two adjacent support pillars 30 refer to those adjacent along the second direction D2, where the second direction D2 is the arrangement direction of the chip electrodes 22 in the same light-emitting chip 20.

[0077] Please refer to Figure 4 Optionally, the cross-section of the second support column 32 along the first direction D1 is trapezoidal, and the area of ​​the surface of the second support column 32 away from the substrate 10 is smaller than the area of ​​the surface of the second support column 32 close to the substrate 10.

[0078] Specifically, the microdevice substrate 100 provided in this application includes a substrate 10, a light-emitting chip 20, and support pillars 30. The light-emitting chip 20 and the support pillars 30 are located on the same side of the substrate 10. When the side of the microdevice substrate 100 where the light-emitting chip 20 is located is subjected to pressure, the support pillars 30 provide a certain degree of protection for the light-emitting chip 20. The support pillars 30 include a first support pillar 31 and a second support pillar 32. The first support pillar 31 is located between the substrate 10 and the second support pillar 32. The elastic modulus of the second support pillar 32 is less than that of the first support pillar 31, meaning the elasticity of the second support pillar 32 is greater than that of the first support pillar 31. When the side of the microdevice substrate 100 where the light-emitting chip 20 is located is subjected to pressure, the second support pillar 32 is compressed first, thus providing a certain degree of protection for the light-emitting chip 20. Please refer to [reference needed]. Figure 4 In this application, an optional implementation is provided in which the cross-section of the second support column 32 along the first direction D1 is trapezoidal, and the area of ​​the surface on the side away from the substrate 10 is smaller than the area of ​​the surface on the side close to the substrate 10. When the side of the microdevice substrate 100 where the light-emitting chip 20 is disposed is pressed, the second support column 32 is compressed during the pressing process, and the contact area increases, which is beneficial to reduce the pressure at the contact position. Figure 11 The following is along Figure 1 For another cross-sectional diagram of AA', please refer to... Figure 11Another optional implementation provided in this application is that the cross section of the second support column 32 along the first direction D1 is trapezoidal, and the area of ​​the surface away from the substrate 10 is greater than the area of ​​the surface close to the substrate 10. When the microdevice substrate 100 is pressed on the side of the light-emitting chip 20, the second support column 32 is compressed during the pressing process, and the contact area increases, which is beneficial to reduce the pressure at the contact position.

[0079] It is understandable that the cross-section of the second support post 32 along the first direction D1 is trapezoidal, regardless of whether the area of ​​the surface of the second support post 32 away from the substrate 10 is smaller than the area of ​​the surface of the second support post 32 closer to the substrate 10 (e.g., Figure 4 As shown), or the area of ​​the surface furthest from the substrate 10 is greater than the area of ​​the surface closest to the substrate 10 (e.g.) Figure 11 As shown, when the microdevice substrate 100 is pressed on one side of the light-emitting chip 20, the second support column 32 is compressed during the pressing process, and the contact area increases, which is beneficial to reducing the pressure at the contact position.

[0080] It should be noted that the second support post 32 can be fabricated using photoresist. If the area of ​​the surface of the second support post 32 furthest from the substrate 10 is smaller than the area of ​​the surface of the second support post 32 closest to the substrate 10, a positive photoresist can be used; if the area of ​​the surface of the second support post 32 furthest from the substrate 10 is larger than the area of ​​the surface of the second support post 32 closest to the substrate 10, a negative photoresist can be used. This application only uses the fabrication of the second support post 32 using photoresist as an example for illustration, and is not limited thereto.

[0081] Figure 12 The following is along Figure 1 For another cross-sectional diagram of AA', please refer to... Figure 12 In one optional embodiment, the support column 30 includes an edge support column 301 and a center support column 302. The distance from the edge support column 301 to the edge of the microdevice substrate 100 is less than the distance from the center support column 302 to the edge of the microdevice substrate 100. The height of the second support column 32 of the edge support column 301 is greater than the height of the second support column 32 of the center support column 302.

[0082] Specifically, the microdevice substrate 100 provided in this embodiment includes a substrate 10, a light-emitting chip 20, and support pillars 30. The light-emitting chip 20 and the support pillars 30 are located on the same side of the substrate 10. The support pillars 30 include edge support pillars 301 and center support pillars 302. The distance from the edge support pillars 301 to the edge of the microdevice substrate 100 is less than the distance from the center support pillars 302 to the edge of the microdevice substrate 100; that is, the edge support pillars 301 are closer to the edge of the microdevice substrate 100. In actual use, the edge region of the microdevice substrate 100 may tilt upwards towards the side where the light-emitting chip 20 is located (e.g., ...). Figure 7 As shown in the figure, the edge area may be subjected to greater pressure. Therefore, the height of the second support column 32 of the edge support column 301 is set to be greater than the height of the second support column 32 of the center support column 302. With this setting, the second support column 32 of the edge support column 301 can have a larger deformation space, which is beneficial to effectively avoid the light-emitting chip 20 being under pressure, thereby helping to improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by pressure on the light-emitting chip 20.

[0083] Figure 13 The following is along Figure 1 For another cross-sectional diagram of AA', please refer to... Figure 13 In this application, an optional implementation is provided in which the height of the first support column 31 of the edge support column 301 is less than the height of the first support column 31 of the center support column 302.

[0084] Specifically, in this embodiment, the microdevice substrate 100 includes a substrate 10, a light-emitting chip 20, and support pillars 30. The light-emitting chip 20 and the support pillars 30 are located on the same side of the substrate 10. The support pillars 30 include edge support pillars 301 and center support pillars 302. The distance from the edge support pillars 301 to the edge of the microdevice substrate 100 is less than the distance from the center support pillars 302 to the edge of the microdevice substrate 100. The edge region of the microdevice substrate 100 tends to tilt upwards towards the side where the light-emitting chip 20 is disposed (e.g., ...). Figure 7 As shown in the diagram, the edge area may experience greater pressure. Therefore, the height of the second support column 32 of the edge support column 301 is greater than the height of the second support column 32 of the center support column 302. This allows the second support column 32 of the edge support column 301 to have a larger deformation space, which helps to effectively prevent the light-emitting chip 20 from being compressed. At the same time, the height of the first support column 31 of the edge support column 301 is less than the height of the first support column 31 of the center support column 302, in order to reduce the difference in the total height between the edge support column 301 and the center support column 302.

[0085] Please continue to refer to this. Figure 13In this application, an optional implementation is provided in which the total height of the edge support column 301 is equal to the total height of the center support column 302.

[0086] Specifically, the support pillars 30 of the microdevice substrate 100 include edge support pillars 301 and center support pillars 302. The distance from the edge support pillars 301 to the edge of the microdevice substrate 100 is less than the distance from the center support pillars 302 to the edge of the microdevice substrate 100. The edge region of the microdevice substrate 100 is prone to tilting upwards towards the side where the light-emitting chip 20 is disposed (e.g., ...). Figure 7 As shown in the diagram, the edge region may experience greater pressure. Therefore, the height of the second support column 32 of the edge support column 301 is greater than the height of the second support column 32 of the center support column 302. This allows for a larger deformation space for the second support column 32 of the edge support column 301, which helps to effectively prevent the light-emitting chip 20 from being subjected to pressure. Since the height of the second support column 32 of the edge support column 301 is greater than the height of the second support column 32 of the center support column 302, the height of the first support column 31 of the edge support column 301 is less than the height of the first support column 31 of the center support column 302. This makes the total height of the edge support column 301 equal to the total height of the center support column 302. This helps to reduce the time difference in pressure on the edge support column 301 and the center support column 302, thereby helping to balance the pressure on the edge support column 301 and the center support column 302.

[0087] Figure 14 The diagram shown is a schematic flowchart of a light-emitting chip transfer method provided in an embodiment of this application. Please refer to it. Figure 1 , Figure 2 and Figure 14 Based on the same inventive concept, this application provides a method for transferring light-emitting chips, comprising:

[0088] S01. A microdevice substrate 100 is provided, the microdevice substrate 100 including a substrate 10, a light-emitting chip 20 and at least two support pillars 30, the light-emitting chip 20 and the support pillars 30 are located on the same side of the substrate 10; along a first direction D1, the height of the support pillars 30 is greater than the thickness of the light-emitting chip 20, the first direction D1 is perpendicular to the plane of the substrate 10; the support pillars 30 include a first support pillar 31 and a second support pillar 32 stacked together, the second support pillar 32 is located on the side of the first support pillar 31 away from the substrate 10; the elastic modulus of the second support pillar 32 is less than the elastic modulus of the first support pillar 31;

[0089] S02, the light-emitting chip 20 is transferred to the transient substrate through the support pillar 30 on the microdevice substrate 100.

[0090] Specifically, this application also provides a method for transferring a light-emitting chip, including but not limited to steps S01 to S02. Step S01 includes providing a microdevice substrate 100; the microdevice substrate 100 includes a substrate 10, a light-emitting chip 20, and support pillars 30. The light-emitting chip 20 and support pillars 30 are located on the same side of the substrate 10. The height of the support pillars 30 is greater than the thickness of the light-emitting chip 20. The support pillars 30 include a first support pillar 31 and a second support pillar 32. The first support pillar 31 is located between the substrate 10 and the second support pillar 32. The elasticity of the second support pillar 32 is greater than the elasticity of the first support pillar 31. In step S01, the microdevice substrate 100 is in an unpressurized state, and the second support pillar 32 is in an extended state. State; Step S02 includes transferring the light-emitting chip 20 to the transient substrate through the support pillar 30 on the microdevice substrate 100. During the transfer process, the side of the microdevice substrate 100 where the light-emitting chip 20 is disposed will be squeezed by the transient substrate. The light-emitting chip 20 is transferred to the transient substrate through the support pillar 30, which provides a certain degree of protection for the light-emitting chip 20 and helps to prevent the light-emitting chip 20 from being directly squeezed by the transient substrate. This helps to improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by pressure. Therefore, the light-emitting chip 20 transfer method provided in this application is beneficial to improving the abnormal situation of the light-emitting chip 20 caused by pressure.

[0091] Figure 15 As shown Figure 14 A detailed flowchart of step S02 is shown below. Figure 16 As shown Figure 15 A schematic diagram of a structure in step S021. Figure 17 The following is the execution. Figure 15 A schematic diagram of a structure following step S023. Figure 18 The following is the execution. Figure 15 A schematic diagram of a structure after step S024. Figure 19 As shown Figure 15 A detailed flowchart of step S024 is shown below. Figure 20 The following is the execution. Figure 15 Please refer to the structural diagram following step S025. Figure 5 , Figure 6 as well as Figures 15-20 This application provides an optional implementation in which the process of transferring the light-emitting chip 20 to the transient substrate via the support pillars 30 on the microdevice substrate 100 includes:

[0092] S021. A first transient substrate 40 is provided. The first transient substrate 40 includes a laser release adhesive layer 42 and a first transient substrate 41. The side of the first transient substrate 40 with the laser release adhesive layer 42 is disposed opposite to the side of the substrate 10 with the light-emitting chip 20. The light-emitting chip 20 includes a light-emitting substrate 21 and a chip electrode 22. The chip electrode 22 is located on the side of the light-emitting substrate 21 away from the substrate 10. The chip electrode 22 and the second support post 32 are fixedly connected to the first transient substrate 41 through the laser release adhesive layer 42.

[0093] S022, Remove substrate 10 to form chip carrier structure;

[0094] S023. A second transient substrate 50 is provided. The second transient substrate 50 includes an adhesive layer 52 and a second transient substrate 51. The side of the second transient substrate 50 with the adhesive layer 52 is disposed opposite to the side of the first transient substrate 40 with the light-emitting chip 20. The light-emitting substrate 21 is fixedly connected to the second transient substrate 50 through the adhesive layer 52.

[0095] S024. Transfer the light-emitting chip 20 in the chip carrier structure to the side of the second transient substrate 50 where the adhesive layer 52 is provided;

[0096] S025. Solder the chip electrode 22 to the target substrate and remove the second transient substrate 50.

[0097] Specifically, this embodiment provides a process for transferring a light-emitting chip 20 to a transient substrate through a support post 30 on a microdevice substrate 100, the process including but not limited to steps S021 to S025.

[0098] Please refer to Figure 5 , Figures 14-16 Step S021 includes providing a first transient substrate 40, fixing the first transient substrate 40 to the microdevice substrate 100, the first transient substrate 40 including a laser-emitting adhesive layer 42 and a first transient substrate 41, and arranging the microdevice substrate 100 and the first transient substrate 40 opposite to each other, with the side of the microdevice substrate 100 where the light-emitting chip 20 is disposed facing the first transient substrate 40, and the side of the first transient substrate 40 where the laser-emitting adhesive layer 42 is disposed facing the microdevice substrate 100 (e.g., ...). Figure 16 As shown), the side of the second support post 32 away from the substrate 10 and the side of the chip electrode 22 are connected to the first transient substrate 41 through the laser release adhesive layer 42. In step S021, the side of the microdevice substrate 100 where the light-emitting chip 20 is disposed is squeezed by the first transient substrate 40, and the microdevice substrate 100 is in a compressed state. The second support post 32 is in a compressed state. After executing step S021, as shown... Figure 5 The structure shown.

[0099] Please refer to Figure 6 , Figure 14 and 15 Step S022 includes removing the substrate 10 of the microdevice substrate 100 to form a chip carrier structure, the chip carrier structure including a first transient substrate 40. Optionally, the removal of the substrate 10 in step S022 employs laser lift-off (LLO) technology, which is a technique that uses laser energy to act on the material interface to achieve material separation. After performing step S022, a chip carrier structure is formed as shown in the figure. Figure 6 The structure shown.

[0100] Please refer to Figures 14-17 Step S023 includes providing a second transient substrate 50, connecting the second transient substrate 50 to a chip carrier structure, the second transient substrate 50 including an adhesive layer 52 and a second transient substrate 51, the second transient substrate 50 and the chip carrier structure being disposed opposite each other, the side of the second transient substrate 50 with the adhesive layer 52 facing the chip carrier structure, the side of the chip carrier structure with the light-emitting chip 20 facing the second transient substrate 50, the side of the light-emitting substrate 21 of the light-emitting chip 20 away from the chip electrode 22 contacting the second transient substrate 50, and being connected to the second transient substrate 50 through the adhesive layer 52. After executing step S023, a structure is formed as shown in the figure. Figure 17 The structure shown.

[0101] Please refer to Figures 14-19 Step S024 includes transferring the light-emitting chip 20 to the second transient substrate 50. The light-emitting chip 20 is connected to the second transient substrate 51 through an adhesive layer 52. The light-emitting substrate 21 of the light-emitting chip 20 is in contact with the adhesive layer 52. The chip electrode 22 of the light-emitting chip 20 is located on the side of the light-emitting substrate 21 away from the second transient substrate 50. Please refer to [reference needed]. Figure 19 This application provides an optional embodiment in which the light-emitting chip 20 in the chip carrier structure is transferred to the side of the second transient substrate 50 where the adhesive layer 52 is provided, including: S0241, laser irradiation of the connection area between the light-emitting chip 20 and the laser-releasing adhesive layer 42; S0242, the light-emitting chip 20 detaches from the laser-releasing adhesive layer 42 and is bonded to one side of the second transient substrate 50 by the adhesive layer 52. Specifically, in the chip carrier structure, the light-emitting chip 20 is connected to the first transient substrate 40 by the laser-releasing adhesive layer 42. The laser-releasing adhesive layer 42 is an adhesive whose adhesive properties can be weakened or eliminated by laser irradiation. When the connection area between the light-emitting chip 20 and the laser-releasing adhesive layer 42 is irradiated by laser ( Figure 18 (The middle arrow indicates laser irradiation). In this area, the adhesive properties of the laser-emitting adhesive layer 42 weaken or disappear, causing the light-emitting chip 20 to detach from the laser-emitting adhesive layer 42. The light-emitting chip 20 is then connected to the second transient substrate 50 via the adhesive layer 52. After executing step S024, a structure as shown is formed. Figure 18 The structure shown.

[0102] Step S025 includes aligning the light-emitting chip 20 with the welding area of ​​the target substrate 60, welding the chip electrode 22 to the target substrate 60, removing the second transient substrate 50, and after performing step S025, forming as shown in the figure. Figure 20 The structure shown is illustrated. It should be noted that the target substrate 60 refers to the structure where the light-emitting chip 20 needs to be welded; this application does not specifically limit this. After the light-emitting chip 20 is welded to the target substrate 60, the bonding force between the chip electrode 22 and the target substrate 60 is greater than the adhesive force between the light-emitting substrate 21 and the adhesive layer 52. Therefore, after the light-emitting chip 20 is welded to the target substrate 60, the second transient substrate 50 does not require special treatment and can be directly removed. Furthermore, the removed second transient substrate 50 can be reused, which also helps save production costs.

[0103] It is understood that in the light-emitting chip transfer method provided in this application, during the connection process between the microdevice substrate 100 and the first transient substrate 40, the side of the microdevice substrate 100 where the light-emitting chip 20 is disposed will be squeezed by the first transient substrate 40. This application provides a certain degree of protection for the light-emitting chip 20 by providing support pillars 30, which helps to prevent the light-emitting chip 20 from being directly squeezed by the transient substrate, thereby helping to improve abnormal problems such as deformation of the chip electrode 22 and breakage of the light-emitting chip 20 caused by pressure on the light-emitting chip 20.

[0104] Please refer to Figure 4 and Figure 14 This application provides an optional implementation in which the first support post 31 and the light-emitting substrate 21 are formed in the same process.

[0105] Specifically, in step S01, a microdevice substrate 100 is provided. The microdevice substrate 100 includes a substrate 10, a light-emitting chip 20, and a support pillar 30. The light-emitting chip 20 includes a light-emitting substrate 21 and a chip electrode 22. The light-emitting substrate 21 is located between the substrate 10 and the chip electrode 22. The support pillar 30 includes a first support pillar 31 and a second support pillar 32. The first support pillar 31 is located between the substrate 10 and the second support pillar 32. In this embodiment, the first support pillar 31 and the light-emitting substrate 21 are formed in the same process, which helps to simplify the manufacturing process of the microdevice substrate 100, thereby improving production efficiency and increasing production capacity.

[0106] Please refer to Figure 4 , Figure 11 and Figure 14 This application provides an optional implementation in which the second support column 32 is fabricated using a photolithography process.

[0107] Specifically, the second support pillar 32 can be fabricated using photolithography, and the formed second support pillar 32 is trapezoidal in shape. When a positive photoresist is used, the area of ​​the surface of the second support pillar 32 furthest from the substrate 10 is smaller than the area of ​​the surface of the side closest to the substrate 10 (e.g., ...). Figure 4 (as shown); When a negative photoresist is used, the area of ​​the surface of the second support pillar 32 furthest from the substrate 10 is larger than the area of ​​the surface closest to the substrate 10 (as shown). Figure 11 (As shown). When the second support column 32 is compressed, the second support column 32 deforms, and the contact area increases, which helps to reduce the pressure at the contact position.

[0108] As can be seen from the above embodiments, the microdevice substrate and light-emitting chip transfer method provided by the present invention achieves at least the following beneficial effects:

[0109] This application provides a method for transferring a microdevice substrate and a light-emitting chip. The microdevice substrate includes a substrate, a light-emitting chip, and at least two support pillars. The light-emitting chip and the support pillars are located on the same side of the substrate. The height of the support pillars is greater than the thickness of the light-emitting chip. When the side of the microdevice substrate where the light-emitting chip is located is pressed, the support pillars are pressed first, providing some protection for the light-emitting chip. The support pillars include a first support pillar and a second support pillar stacked together. The first support pillar is located between the substrate and the second support pillar. The elastic modulus of the second support pillar is less than that of the first support pillar. When the support pillar is pressed, the second support pillar has a certain deformable space, which helps to prevent the light-emitting chip from being squeezed. This helps to improve abnormal situations such as chip electrode deformation and light-emitting chip breakage caused by the light-emitting chip being squeezed, and thus helps to reduce abnormal problems of the light-emitting chip.

[0110] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0111] The above description is merely a specific embodiment of this disclosure, enabling those skilled in the art to understand or implement it. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not to be limited to the embodiments described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A microdevice substrate, characterized in that, include: A substrate, a light-emitting chip, and at least two support pillars, wherein the light-emitting chip and the support pillars are located on the same side of the substrate; Along the first direction, the height of the support pillar is greater than the thickness of the light-emitting chip, and the first direction is perpendicular to the plane where the substrate is located; The support pillar includes a first support pillar and a second support pillar stacked together, wherein the second support pillar is located on the side of the first support pillar away from the substrate; The elastic modulus of the second support column is less than that of the first support column; The microdevice substrate satisfies at least one of the following: The microdevice substrate includes a first state and a second state. In the first state, the height of the second support post along the first direction is H0. In the second state, the height of the second support post along the first direction is H1, where H0 > H1. or, The density of the support pillars in the region farther from the center of the substrate is greater than the density of the support pillars in the region closer to the center of the substrate. or, The light-emitting chip includes a light-emitting substrate. Both the light-emitting substrate and the first support pillar include an N-type layer, a light-emitting layer, and a P-type layer. The N-type layer is located on one side of the substrate, the light-emitting layer is located on the side of the N-type layer away from the substrate, and the P-type layer is located on the side of the light-emitting layer away from the substrate. or, The cross-section of the second support column along the first direction is trapezoidal, and the area of ​​the surface of the second support column away from the substrate is smaller than the area of ​​the surface of the second support column close to the substrate. or, The support pillar includes an edge support pillar and a center support pillar. The distance from the edge support pillar to the edge of the microdevice substrate is less than the distance from the center support pillar to the edge of the microdevice substrate. The height of the second support pillar of the edge support pillar is greater than the height of the second support pillar of the center support pillar, and / or the height of the first support pillar of the edge support pillar is less than the height of the first support pillar of the center support pillar.

2. The microdevice substrate according to claim 1, characterized in that, The light-emitting chip includes a light-emitting substrate and a chip electrode, wherein the chip electrode is located on the side of the light-emitting substrate away from the substrate; The distance between the surface of the second support pillar away from the substrate and the substrate is greater than the distance between the surface of the chip electrode away from the substrate and the substrate.

3. The microdevice substrate according to claim 2, characterized in that, The height of the first support column along the first direction is equal to the thickness of the light-emitting substrate along the first direction.

4. The microdevice substrate according to claim 3, characterized in that, The height of the second support column along the first direction is greater than the thickness of the chip electrode along the first direction.

5. The microdevice substrate according to claim 1, characterized in that, At least one support pillar is included between two adjacent light-emitting chips.

6. The microdevice substrate according to claim 1, characterized in that, The total height of the edge support columns is equal to the total height of the central support column.

7. A method for transferring light-emitting chips, characterized in that, include: A microdevice substrate is provided, the microdevice substrate including a substrate, a light-emitting chip, and at least two support pillars, the light-emitting chip and the support pillars being located on the same side of the substrate; along a first direction, the height of the support pillars is greater than the thickness of the light-emitting chip, the first direction being perpendicular to the plane of the substrate; the support pillars include a first support pillar and a second support pillar stacked together, the second support pillar being located on the side of the first support pillar away from the substrate; the elastic modulus of the second support pillar is less than the elastic modulus of the first support pillar; The light-emitting chip is transferred to the transient substrate through the support pillars on the microdevice substrate; The microdevice substrate satisfies at least one of the following: The microdevice substrate includes a first state and a second state. In the first state, the height of the second support post along the first direction is H0. In the second state, the height of the second support post along the first direction is H1, where H0 > H1. or, The density of the support pillars in the region farther from the center of the substrate is greater than the density of the support pillars in the region closer to the center of the substrate. or, The light-emitting chip includes a light-emitting substrate. Both the light-emitting substrate and the first support pillar include an N-type layer, a light-emitting layer, and a P-type layer. The N-type layer is located on one side of the substrate, the light-emitting layer is located on the side of the N-type layer away from the substrate, and the P-type layer is located on the side of the light-emitting layer away from the substrate. or, The cross-section of the second support column along the first direction is trapezoidal, and the area of ​​the surface of the second support column away from the substrate is smaller than the area of ​​the surface of the second support column close to the substrate. or, The support pillar includes an edge support pillar and a center support pillar. The distance from the edge support pillar to the edge of the microdevice substrate is less than the distance from the center support pillar to the edge of the microdevice substrate. The height of the second support pillar of the edge support pillar is greater than the height of the second support pillar of the center support pillar, and / or the height of the first support pillar of the edge support pillar is less than the height of the first support pillar of the center support pillar.

8. The light-emitting chip transfer method according to claim 7, characterized in that, The process of transferring the light-emitting chip to the transient substrate via the support pillars on the microdevice substrate includes: A first transient substrate is provided, the first transient substrate including a laser emitting adhesive layer and a first transient substrate, the side of the first transient substrate with the laser emitting adhesive layer is disposed opposite to the side of the substrate with the light-emitting chip, the light-emitting chip including a light-emitting substrate and a chip electrode, the chip electrode being located on the side of the light-emitting substrate away from the substrate, the chip electrode and a second support post being fixedly connected to the first transient substrate through the laser emitting adhesive layer; The substrate is removed to form a chip carrier structure; A second transient substrate is provided, the second transient substrate including an adhesive layer and a second transient substrate, wherein the side of the second transient substrate with the adhesive layer is disposed opposite to the side of the first transient substrate with the light-emitting chip, and the light-emitting substrate is fixedly connected to the second transient substrate through the adhesive layer. The light-emitting chip in the chip carrier structure is transferred to the side of the second transient substrate where the adhesive layer is provided; The chip electrodes are soldered to the target substrate, and the second transient substrate is removed.

9. The light-emitting chip transfer method according to claim 8, characterized in that, The step of transferring the light-emitting chip in the chip carrier structure to the side of the second transient substrate where the adhesive layer is disposed includes: The laser irradiates the connection area between the light-emitting chip and the laser-emitting adhesive layer; The light-emitting chip detaches from the laser-emitting adhesive layer and is then bonded to one side of the second transient substrate by the adhesive layer.

10. The light-emitting chip transfer method according to claim 7, characterized in that, The light-emitting chip includes a light-emitting substrate, and the first support post and the light-emitting substrate are formed in the same process.

11. The light-emitting chip transfer method according to claim 7, characterized in that, The second support column is fabricated using photolithography.

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