A Micro-LED display panel and a method for forming the same

Abstract

This invention relates to a Micro-LED display panel and its formation method, belonging to the field of semiconductor display technology. In the formation method of the Micro-LED display panel of this invention, a first transparent conductive layer is formed on a second semiconductor layer, and the first transparent conductive layer is patterned to form a plurality of parallel-arranged strip-shaped transparent conductive bumps. Then, a second transparent conductive layer is formed. The first transparent conductive layer is magnesium and fluorine co-doped tin oxide, and the second transparent conductive layer is indium tin oxide. This configuration significantly improves the current diffusion performance, thereby enhancing the light-emitting performance of the Micro-LED unit.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor light emitting technology, and in particular to a Micro-LED display panel and a method for forming the same. Background Art

[0002] Micro-LED display panel is an electroluminescent device composed of an array of micron-sized semiconductor light-emitting units. It realizes the display of images by converting electrical energy into light energy. The light-emitting unit size of Micro-LED display panel is usually less than 50 microns, and is densely integrated on the chip to form a two-dimensional Micro LED array. Each pixel can be addressed and controlled and independently driven to emit light, which is one of the core features of Micro-LED technology. Micro-LED display panel has technical advantages such as high pixel density and ultra-high resolution, self-luminous characteristics, high efficiency and low power consumption, high brightness and color saturation, long life and stability, flexibility, etc., and thus has broad application prospects in many fields such as high-end TVs, commercial billboards, AR / VR equipment, vehicle displays and wearable devices. Summary of the invention

[0003] The object of the present invention is to overcome the above-mentioned deficiencies of the prior art and provide a Micro-LED display panel and a method for forming the same.

[0004] To achieve the above object, the present invention provides a method for forming a Micro-LED display panel, and the method for forming a Micro-LED display panel includes the following steps:

[0005] A growth substrate is provided, and a first semiconductor layer, a quantum well layer and a second semiconductor layer are epitaxially grown on the growth substrate.

[0006] A first transparent conductive layer is formed on the second semiconductor layer, and the first transparent conductive layer is patterned to form a plurality of parallel-arranged strip-shaped transparent conductive bumps.

[0007] Then, a second transparent conductive layer is formed. The material of the second transparent conductive layer is different from that of the first transparent conductive layer.

[0008] A plurality of metal electrodes are formed on the second transparent conductive layer to form a light emitting diode wafer.

[0009] The light-emitting diode wafer is then cut to form a plurality of Micro-LED units, each of which includes a metal electrode.

[0010] Then, the plurality of Micro-LED units are transferred to a carrier.

[0011] Then, a first protective layer, a second protective layer, and a third protective layer are stacked on the side and top surface of each Micro-LED unit, and the density of one side of the second protective layer adjacent to the first protective layer is less than the density of the other side of the second protective layer, and the density difference between the two sides is 0.6-1.5 g / cm 3 , and the density of one side of the third protective layer adjacent to the second protective layer is less than the density of the other side of the third protective layer, and the density difference between the two sides is 0.3-1.2 g / cm 3 .

[0012] Next, a driving substrate is provided, and the Micro-LED unit is transferred to the driving substrate by using a transfer device, so that the metal electrode of the Micro-LED unit is electrically connected to the wiring of the driving substrate.

[0013] Next, a packaging layer is formed, and then the packaging layer and the growth substrate of each of the Micro-LED units are ground to expose the first semiconductor layer of each of the Micro-LED units.

[0014] Then, a third transparent conductive layer is formed, and the third transparent conductive layer is a common electrode to form a Micro-LED display panel.

[0015] As a preferred technical solution, the first transparent conductive layer is tin oxide co-doped with magnesium and fluorine, and the second transparent conductive layer is indium tin oxide.

[0016] As a preferred technical solution, the material of the metal electrode includes one or more of copper, aluminum, titanium, palladium, and silver, and the metal electrode is formed by magnetron sputtering, thermal evaporation, electron beam evaporation, electroplating, or chemical plating.

[0017] As a preferred technical solution, before transferring the plurality of Micro-LED units to a carrier, a buffer layer is disposed on the carrier, so that the metal electrode of each Micro-LED unit is embedded in the buffer layer.

[0018] As a preferred technical solution, the density of the second protective layer is greater than the density of the first protective layer, and the density of the third protective layer is greater than the density of the second protective layer.

[0019] As a preferred technical solution, the first protective layer includes silicon oxide or silicon oxynitride, the material of the second protective layer includes one or more of silicon nitride, aluminum oxide, silicon carbide, titanium nitride, niobium oxide, and titanium oxide, and the material of the third protective layer includes hafnium oxide and / or zirconium oxide.

[0020] As a preferred technical solution, the encapsulation layer includes resin material.

[0021] As a preferred technical solution, the third transparent conductive layer is tin oxide co-doped with lithium and fluorine.

[0022] The present invention also provides a Micro-LED display panel, which is manufactured using the above-mentioned method for forming a Micro-LED display panel.

[0023] The beneficial effects of the present invention are:

[0024] In the method for forming a Micro-LED display panel of the present invention, a first transparent conductive layer is formed on a second semiconductor layer, and the first transparent conductive layer is patterned to form a plurality of parallel arranged strip-shaped transparent conductive bumps, and then a second transparent conductive layer is formed, and the first transparent conductive layer is set to be tin oxide co-doped with magnesium and fluorine, and the second transparent conductive layer is indium tin oxide. Through the above-mentioned setting, the diffusion performance of the current can be greatly improved, and thus the luminous performance of the Micro-LED unit can be improved; and a stacked first protective layer, a second protective layer and a third protective layer are formed on the side and top surface of each Micro-LED unit, and the density of the second protective layer on one side adjacent to the first protective layer is less than the density of the other side of the second protective layer, and the density difference between the two sides is 0.6-1.5 g / cm 3 , and the density of one side of the third protective layer adjacent to the second protective layer is less than the density of the other side of the third protective layer, and the density difference between the two sides is 0.3-1.2 g / cm 3 , which gradually increases the rigidity of the second protective layer and the third protective layer, thereby effectively protecting the Micro-LED unit during the subsequent transfer process and use. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic diagram showing the structure of forming a light emitting diode wafer in an embodiment of the present invention.

[0026] Figure 2 It is a schematic diagram showing the structure of transferring a plurality of Micro-LED units to a carrier board in an embodiment of the present invention.

[0027] Figure 3 It is a schematic diagram showing the structure of a first protective layer, a second protective layer and a third protective layer stacked in an embodiment of the present invention.

[0028] Figure 4 It is a schematic diagram showing the structure of transferring the Micro-LED unit to the driving substrate in an embodiment of the present invention.

[0029] Figure 5 It is a schematic diagram showing the structure of forming an encapsulation layer in an embodiment of the present invention.

[0030] Figure 6 It is a schematic diagram showing the structure of forming a third transparent conductive layer in an embodiment of the present invention. DETAILED DESCRIPTION

[0031] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thoroughly and comprehensively understood.

[0032] like Figure 1 to Figure 6 As shown, this embodiment provides a method for forming a Micro-LED display panel, and the method for forming a Micro-LED display panel includes the following steps:

[0033] like Figure 1 As shown, a growth substrate 100 is provided, and a first semiconductor layer 201 , a quantum well layer 202 , and a second semiconductor layer 203 are epitaxially grown on the growth substrate 100 .

[0034] In a specific embodiment, the first semiconductor layer 201, the quantum well layer 202 and the second semiconductor layer 203 are formed by an MOCVD process, and before the epitaxial growth of the first semiconductor layer 201, a transition buffer layer (not shown) is optionally pre-grown on the growth substrate 100, wherein the first semiconductor layer 201 and the second semiconductor layer 203 are gallium nitride layers with different doping types, specifically, the first semiconductor layer 201 is a silicon-doped n-type gallium nitride layer or a magnesium-doped p-type gallium nitride layer, and correspondingly, the second semiconductor layer 203 is a magnesium-doped p-type gallium nitride layer or a silicon-doped n-type gallium nitride layer; the quantum well layer 202 can be an InGaN quantum well layer and a GaN quantum barrier layer grown alternately.

[0035] like Figure 1 As shown, a first transparent conductive layer is formed on the second semiconductor layer 203, and the first transparent conductive layer is patterned to form a plurality of parallel arranged strip-shaped transparent conductive bumps 204, and then a second transparent conductive layer 205 is formed, and the material of the second transparent conductive layer 205 is different from that of the first transparent conductive layer.

[0036] In a specific embodiment, the first transparent conductive layer is tin oxide co-doped with magnesium and fluorine, and the second transparent conductive layer 205 is indium tin oxide.

[0037] In a specific embodiment, the magnesium and fluorine co-doped tin oxide is formed by a magnetron sputtering process. More specifically, by adjusting the specific process of magnetron sputtering, the doping concentration of magnesium in the magnesium and fluorine co-doped tin oxide is 0.8-5.5at%, and the doping concentration of fluorine is 0.5-3.2at%. More preferably, the doping concentration of magnesium is 0.8at%, 1.2at%, 1.8at%, 2.4at%, 2.8at%, 3.5at%, 4.3at% or 5.5at%, and the doping concentration of fluorine is 0.5at%, 0.8at%, 1.2at%, 1.5at%, 1.8at%, 2.4at%, 2.7at%, 3at% or 3.2at%.

[0038] In a specific embodiment, the first transparent conductive layer is patterned by a wet etching process or a dry etching process to form a plurality of parallel-arranged strip-shaped transparent conductive bumps 204 .

[0039] In a specific embodiment, indium tin oxide is deposited by a magnetron sputtering process to form the second transparent conductive layer 205 .

[0040] like Figure 1 As shown, a plurality of metal electrodes 206 are formed on the second transparent conductive layer 205 to form a light emitting diode wafer.

[0041] In a specific embodiment, the metal electrode 206 is formed by magnetron sputtering, thermal evaporation, electron beam evaporation, electroplating or chemical plating, and the material of the metal electrode 206 includes one or more of copper, aluminum, titanium, palladium and silver.

[0042] like Figure 2 As shown, the light-emitting diode wafer is then cut to form a plurality of Micro-LED units 300 , each of which includes a metal electrode 206 .

[0043] In a specific embodiment, a plurality of the Micro-LED units 300 are formed by laser cutting.

[0044] like Figure 2 As shown, the plurality of Micro-LED units 300 are then transferred to a carrier board 400 .

[0045] In a specific embodiment, before transferring the plurality of Micro-LED units 300 onto the carrier 400 , a buffer layer 401 is disposed on the carrier 400 , so that the metal electrode 206 of each Micro-LED unit 300 is embedded in the buffer layer 401 .

[0046] In a specific embodiment, the carrier 400 is one of a metal substrate, a ceramic substrate and a semiconductor substrate.

[0047] In a specific embodiment, the buffer layer 401 may be a temporary adhesive layer, which may protect the metal electrode 206 of each of the Micro-LED units 300 .

[0048] like Figure 3 As shown, a first protective layer 501, a second protective layer 502, and a third protective layer 503 are stacked on the side and top surface of each Micro-LED unit 300, and the density of one side of the second protective layer 502 adjacent to the first protective layer 501 is less than the density of the other side of the second protective layer 502, and the density difference between the two sides is 0.6-1.5 g / cm 3 , and the density of one side of the third protective layer 503 adjacent to the second protective layer 502 is less than the density of the other side of the third protective layer 503, and the density difference between the two sides is 0.3-1.2 g / cm 3 .

[0049] In a specific embodiment, the density of the second protective layer 502 is greater than that of the first protective layer 501 , and the density of the third protective layer 503 is greater than that of the second protective layer 502 .

[0050] In a specific embodiment, the first protective layer 501 includes silicon oxide or silicon oxynitride, the material of the second protective layer 502 includes one or more of silicon nitride, aluminum oxide, silicon carbide, titanium nitride, niobium oxide, and titanium oxide, and the material of the third protective layer 503 includes hafnium oxide and / or zirconium oxide.

[0051] In a specific embodiment, the first protective layer 501 includes silicon oxide or silicon oxynitride, which is formed by a PECVD process, and the average density of the first protective layer 501 is 1.8-2.6 g / cm 3 Optionally, the first protective layer 501 may have a microporous structure (not shown). Then, the microporous structure is formed in the first protective layer 501 through an etching process.

[0052] In a specific embodiment, when the silicon oxide layer or the silicon oxynitride layer is prepared by the PECVD process, the flow rate of the silane gas, the flow rate of the oxygen gas, the flow rate of the nitrogen source, the pressure of the reaction chamber and / or the reaction temperature are adjusted to prepare a loosely arranged silicon oxide layer or silicon oxynitride layer, so that the average density of the first protective layer 501 obtained is 1.8 g / cm 3 , 1.9g / cm 3 , 2g / cm 3 , 2.1g / cm 3, 2.2g / cm 3 , 2.4g / cm 3 or 2.6 g / cm 3 .

[0053] In a specific embodiment, the first protective layer 501 is irradiated with laser to form a plurality of randomly arranged microporous structures on the surface of the first protective layer 501 . Since the first protective layer 501 is loose in texture, a plurality of microporous structures can be formed by irradiating the surface of the first protective layer 501 with laser.

[0054] In a specific embodiment, a metal material is then deposited on the first protective layer 501 by a magnetron sputtering process to form metal particles (not shown) in the microporous structure in the first protective layer 501. More specifically, a 1-3 nm metal silver layer is deposited on the surface of the first protective layer 501 by a magnetron sputtering process, and then heat-treated at 150-350°C for 1-3 minutes. Due to the presence of the microporous structure, the metal silver particles formed by the agglomeration of the metal silver layer under the heat treatment are easily formed in the microporous structure, and thus most of the metal silver particles are agglomerated in the microporous structure.

[0055] In a specific embodiment, the second protective layer 502 is formed by an atomic layer deposition process, a magnetron sputtering process and / or a chemical vapor deposition process, and the average density of the second protective layer 602 is 3-5 g / cm 3 .

[0056] In a specific embodiment, the second protective layer 502 may include a stacked structure such as silicon nitride / titanium nitride, aluminum oxide / niobium oxide, niobium oxide / titanium oxide, and by adjusting the specific parameters of the deposition process, the density difference between the two sides of the second protective layer 502 is 0.6 g / cm 3 , 0.8g / cm 3 , 1g / cm 3 , 1.2g / cm 3 , 1.4g / cm 3 or 1.6 g / cm 3 The average density of the second protective layer 502 is 3 g / cm 3 , 3.3g / cm 3 、3.6g / cm 3 、3.9g / cm 3 , 4.3g / cm 3 , 4.6g / cm 3 , 4.8g / cm 3 or 5g / cm 3 .

[0057] In a specific embodiment, the material of the third protective layer 503 includes a zirconium oxide / hafnium oxide stacked structure, and the third protective layer 503 is formed by a magnetron sputtering or atomic layer deposition process, and the specific parameters of the deposition process are adjusted to adjust the specific ratio of the zirconium oxide and hafnium oxide layers, so that the density difference between the two sides of the third protective layer 503 is 0.3 g / cm 3 , 0.5g / cm 3 , 0.7g / cm 3 , 0.9g / cm 3 , 1g / cm 3 or 1.2g / cm 3 The average density of the third protective layer 503 is 5.5 g / cm 3 , 6g / cm 3 、6.5g / cm 3 , 7g / cm 3 , 7.5g / cm 3 , 8g / cm 3 , 8.5g / cm 3 or 9g / cm 3 .

[0058] like Figure 4 As shown, a driving substrate 600 is then provided, and the Micro-LED unit 300 is transferred to the driving substrate 600 by using a transfer device, so that the metal electrode 206 of the Micro-LED unit 300 is electrically connected to the wiring of the driving substrate 600 .

[0059] like Figure 5 As shown, a packaging layer 700 is then formed, and then the packaging layer 700 and the growth substrate 100 of each of the Micro-LED units 300 are ground to expose the first semiconductor layer 201 of each of the Micro-LED units 300 .

[0060] In a specific embodiment, the encapsulation layer 700 includes a resin material. More specifically, the resin material may be epoxy resin.

[0061] like Figure 6 As shown, a third transparent conductive layer 800 is then formed, and the third transparent conductive layer 800 is a common electrode to form a Micro-LED display panel.

[0062] In a specific embodiment, the third transparent conductive layer 800 is tin oxide co-doped with lithium and fluorine.

[0063] In a specific embodiment, the lithium and fluorine co-doped tin oxide is formed by a magnetron sputtering process. More specifically, by adjusting the specific process of magnetron sputtering, the doping concentration of lithium in the lithium and fluorine co-doped tin oxide is 0.5-3at%, and the doping concentration of fluorine is 0.3-1.8at%. More preferably, the doping concentration of lithium is 0.5at%, 0.7at%, 1at%, 1.5at%, 2at%, 2.3at%, 2.6at% or 3at%, and the doping concentration of fluorine is 0.3at%, 0.5at%, 0.8at%, 1at%, 1.2at%, 1.5at% or 1.8at%.

[0064] like Figure 6 As shown, the present invention also proposes a Micro-LED display panel, which is manufactured using the above-mentioned method for forming the Micro-LED display panel.

[0065] In other preferred technical solutions, the present invention provides a method for forming a Micro-LED display panel, and the method for forming a Micro-LED display panel includes the following steps:

[0066] A growth substrate is provided, and a first semiconductor layer, a quantum well layer and a second semiconductor layer are epitaxially grown on the growth substrate.

[0067] A first transparent conductive layer is formed on the second semiconductor layer, and the first transparent conductive layer is patterned to form a plurality of parallel-arranged strip-shaped transparent conductive bumps.

[0068] Then, a second transparent conductive layer is formed. The material of the second transparent conductive layer is different from that of the first transparent conductive layer.

[0069] A plurality of metal electrodes are formed on the second transparent conductive layer to form a light emitting diode wafer.

[0070] The light-emitting diode wafer is then cut to form a plurality of Micro-LED units, each of which includes a metal electrode.

[0071] Then, the plurality of Micro-LED units are transferred to a carrier.

[0072] Then, a first protective layer, a second protective layer, and a third protective layer are stacked on the side and top surface of each Micro-LED unit, and the density of one side of the second protective layer adjacent to the first protective layer is less than the density of the other side of the second protective layer, and the density difference between the two sides is 0.6-1.5 g / cm 3, and the density of one side of the third protective layer adjacent to the second protective layer is less than the density of the other side of the third protective layer, and the density difference between the two sides is 0.3-1.2 g / cm 3 .

[0073] Next, a driving substrate is provided, and the Micro-LED unit is transferred to the driving substrate by using a transfer device, so that the metal electrode of the Micro-LED unit is electrically connected to the wiring of the driving substrate.

[0074] Next, a packaging layer is formed, and then the packaging layer and the growth substrate of each of the Micro-LED units are ground to expose the first semiconductor layer of each of the Micro-LED units.

[0075] Then, a third transparent conductive layer is formed, and the third transparent conductive layer is a common electrode to form a Micro-LED display panel.

[0076] In a more preferred technical solution, the first transparent conductive layer is tin oxide co-doped with magnesium and fluorine, and the second transparent conductive layer is indium tin oxide.

[0077] In a more preferred technical solution, the material of the metal electrode includes one or more of copper, aluminum, titanium, palladium, and silver, and the metal electrode is formed by magnetron sputtering, thermal evaporation, electron beam evaporation, electroplating, or chemical plating.

[0078] In a more optimal technical solution, before transferring the plurality of Micro-LED units to a carrier, a buffer layer is disposed on the carrier, so that the metal electrode of each Micro-LED unit is embedded in the buffer layer.

[0079] In a more preferred technical solution, the density of the second protective layer is greater than the density of the first protective layer, and the density of the third protective layer is greater than the density of the second protective layer.

[0080] In a more preferred technical solution, the first protective layer includes silicon oxide or silicon oxynitride, the material of the second protective layer includes one or more of silicon nitride, aluminum oxide, silicon carbide, titanium nitride, niobium oxide, and titanium oxide, and the material of the third protective layer includes hafnium oxide and / or zirconium oxide.

[0081] In a more preferred technical solution, the encapsulation layer includes a resin material.

[0082] In a more preferred technical solution, the third transparent conductive layer is tin oxide co-doped with lithium and fluorine.

[0083] In other preferred technical solutions, the present invention further proposes a Micro-LED display panel, which is manufactured using the above-mentioned method for forming a Micro-LED display panel.

[0084] In the method for forming a Micro-LED display panel of the present invention, a first transparent conductive layer is formed on a second semiconductor layer, and the first transparent conductive layer is patterned to form a plurality of parallel arranged strip-shaped transparent conductive bumps, and then a second transparent conductive layer is formed, and the first transparent conductive layer is set to be tin oxide co-doped with magnesium and fluorine, and the second transparent conductive layer is indium tin oxide. Through the above-mentioned setting, the diffusion performance of the current can be greatly improved, and thus the luminous performance of the Micro-LED unit can be improved; and a stacked first protective layer, a second protective layer and a third protective layer are formed on the side and top surface of each Micro-LED unit, and the density of the second protective layer on one side adjacent to the first protective layer is less than the density of the other side of the second protective layer, and the density difference between the two sides is 0.6-1.5 g / cm 3 , and the density of one side of the third protective layer adjacent to the second protective layer is less than the density of the other side of the third protective layer, and the density difference between the two sides is 0.3-1.2 g / cm 3 , which gradually increases the rigidity of the second protective layer and the third protective layer, thereby effectively protecting the Micro-LED unit during the subsequent transfer process and use.

[0085] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for forming a Micro-LED display panel, characterized in that: The method for forming the Micro-LED display panel comprises the following steps: Providing a growth substrate, and epitaxially growing a first semiconductor layer, a quantum well layer, and a second semiconductor layer on the growth substrate; forming a first transparent conductive layer on the second semiconductor layer, and patterning the first transparent conductive layer to form a plurality of parallel-arranged strip-shaped transparent conductive bumps; Then, forming a second transparent conductive layer, wherein the material of the second transparent conductive layer is different from that of the first transparent conductive layer; forming a plurality of metal electrodes on the second transparent conductive layer to form a light emitting diode wafer; Then, the light-emitting diode wafer is cut to form a plurality of Micro-LED units, each of which includes a metal electrode; Then, transferring the plurality of Micro-LED units to a carrier; Then, a first protective layer, a second protective layer, and a third protective layer are stacked on the side and top surface of each Micro-LED unit, and the density of one side of the second protective layer adjacent to the first protective layer is less than the density of the other side of the second protective layer, and the density difference between the two sides is 0.6-1.5 g / cm 3 , and the density of one side of the third protective layer adjacent to the second protective layer is less than the density of the other side of the third protective layer, and the density difference between the two sides is 0.3-1.2 g / cm 3 , wherein the first protective layer comprises silicon oxide or silicon oxynitride, the material of the second protective layer comprises one or more of silicon nitride, aluminum oxide, silicon carbide, titanium nitride, niobium oxide, and titanium oxide, and the material of the third protective layer comprises hafnium oxide and / or zirconium oxide; Next, a driving substrate is provided, and the Micro-LED unit is transferred to the driving substrate by using a transfer device, so that the metal electrode of the Micro-LED unit is electrically connected to the wiring of the driving substrate; Next, forming an encapsulation layer, and then grinding the encapsulation layer and the growth substrate of each of the Micro-LED units to expose the first semiconductor layer of each of the Micro-LED units; Then, a third transparent conductive layer is formed, and the third transparent conductive layer is a common electrode to form a Micro-LED display panel.

2. The method for forming a Micro-LED display panel according to claim 1, wherein: The first transparent conductive layer is tin oxide co-doped with magnesium and fluorine, and the second transparent conductive layer is indium tin oxide.

3. The method for forming a Micro-LED display panel according to claim 1, wherein: The material of the metal electrode includes one or more of copper, aluminum, titanium, palladium, and silver, and the metal electrode is formed by magnetron sputtering, thermal evaporation, electron beam evaporation, electroplating, or chemical plating.

4. The method for forming a Micro-LED display panel according to claim 1, wherein: Before transferring the plurality of Micro-LED units to a carrier, a buffer layer is disposed on the carrier, so that the metal electrode of each Micro-LED unit is embedded in the buffer layer.

5. The method for forming a Micro-LED display panel according to claim 1, wherein: The density of the second protective layer is greater than that of the first protective layer, and the density of the third protective layer is greater than that of the second protective layer.

6. The method for forming a Micro-LED display panel according to claim 1, wherein: The encapsulation layer includes a resin material.

7. The method for forming a Micro-LED display panel according to claim 1, wherein: The third transparent conductive layer is tin oxide co-doped with lithium and fluorine.

8. A Micro-LED display panel, characterized in that: The Micro-LED display panel is manufactured by the method for forming the Micro-LED display panel according to any one of claims 1 to 7.

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