A crystal film screen and its preparation method

Abstract

The present invention provides a crystal film screen and a preparation method thereof, the crystal film screen comprises a transparent protective layer, a metal circuit layer arranged on one side of the transparent protective layer, and a plurality of light-emitting elements connected to the metal circuit layer and arranged in an array, an output power supply is arranged on one side of the metal circuit layer, the metal circuit layer is composed of a plurality of conductive parts, the conductive parts include a first conductive part close to one end of the output power supply, and a second conductive part arranged away from the first conductive part, the thickness of each conductive part decreases in sequence along the direction from the first conductive part to the second conductive part. By setting a plurality of conductive parts, the thickness of each conductive part decreases in sequence along the direction from the first conductive part to the second conductive part, which is equivalent to changing the line resistance value at each location of the metal circuit layer, gradually increasing the current of the circuit away from the power supply side, making the overall heat generation of the screen uniform, so as to reduce the color difference effect caused by the screen aging after long-term use.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal film screens, and in particular to a crystal film screen and a preparation method thereof. Background Art

[0002] LED crystal film display screen has the advantages of high brightness, high contrast and high color saturation, and can achieve high-definition and realistic image display effects. The specific structure of the crystal film screen includes a transparent PET protective layer, a grid circuit arranged on the protective layer, and a light-emitting element arranged on the circuit, and a power supply is arranged on one side of the circuit.

[0003] In the prior art, the line resistance values ​​at various locations on the grid circuit are equal, but the current on the side close to the power supply is greater than the current on the side far from the power supply, causing the grid circuit on the side close to the power supply to generate much more heat than the side far from the power supply, resulting in uneven heating of the entire screen and color difference after long-term use and aging. Summary of the invention

[0004] In view of the deficiencies of the prior art, the purpose of the present invention is to provide a crystal film screen and a preparation method thereof, aiming to solve the technical problem of uneven heating of the entire screen in the prior art.

[0005] In order to achieve the above-mentioned purpose, the present invention is implemented through the following technical scheme: a crystal film screen, comprising a transparent protective layer, a metal circuit layer arranged on one side of the transparent protective layer, and a plurality of light-emitting elements connected to the metal circuit layer and arranged in an array, an output power supply is provided on one side of the metal circuit layer, the metal circuit layer is composed of a plurality of conductive parts, the conductive parts include a first conductive part close to one end of the output power supply, and a second conductive part arranged away from the first conductive part, and the thickness of each of the conductive parts decreases successively along the direction from the first conductive part to the second conductive part.

[0006] Compared with the prior art, the beneficial effect of the present invention lies in that: by setting a plurality of conductive parts, the thickness of each conductive part decreases successively along the direction from the first conductive part to the second conductive part, which is equivalent to changing the line resistance of each part of the metal circuit layer, gradually increasing the current of the circuit away from the power supply side, so that the overall heat generation of the screen is uniform, so as to reduce the color difference effect that occurs after the screen is aged after long-term use.

[0007] According to one aspect of the above technical solution, the material of the metal circuit layer is one or more of copper, copper-nickel alloy, copper-titanium alloy, copper-molybdenum alloy, and copper-chromium alloy.

[0008] According to one aspect of the above technical solution, the metal circuit layer is arranged in a stepped manner, and the conductive part also includes a third conductive part, a fourth conductive part and a fifth conductive part which are sequentially arranged between the first conductive part and the second conductive part, and the third conductive part is arranged close to the first conductive part.

[0009] According to one aspect of the above technical solution, the thickness of the first conductive part is 31um, the thickness of the second conductive part is 3um, the thickness of the third conductive part is 24um, the thickness of the fourth conductive part is 17um, and the thickness of the fifth conductive part is 10um.

[0010] On the other hand, the present application provides a method for preparing a crystal film screen, which is used to prepare the crystal film screen described in the above technical solution, and the method comprises the following steps:

[0011] Providing a PET film as a transparent protective layer;

[0012] A metal layer consisting of a plurality of conductive parts is sequentially formed on the transparent protective layer, wherein the conductive parts include a first conductive part close to one end of the output power supply and a second conductive part arranged away from the first conductive part, and the thickness of each conductive part decreases sequentially from the first conductive part to the second conductive part;

[0013] Etching to form a circuit on the metal layer to prepare a metal circuit layer;

[0014] A plurality of light emitting elements are arranged in an array on the metal circuit layer to obtain a crystal film screen.

[0015] According to one aspect of the above technical solution, the step of sequentially preparing a metal layer consisting of a plurality of conductive parts on the transparent protective layer specifically includes:

[0016] Preparing a metal plate layer on the transparent protective layer;

[0017] Partition etching is performed sequentially on the metal plate layer to prepare a metal layer consisting of a plurality of conductive parts, wherein the etching depth increases sequentially along the direction from the first conductive part to the second conductive part.

[0018] According to one aspect of the above technical solution, the step of sequentially preparing a metal layer consisting of a plurality of conductive parts on the transparent protective layer specifically includes:

[0019] A plurality of conductive parts with different thicknesses are sequentially formed on the transparent protective layer based on an electroplating process to prepare a metal layer arranged in a stepped manner, wherein the conductive parts further include a third conductive part, a fourth conductive part and a fifth conductive part sequentially arranged between the first conductive part and the second conductive part, and the third conductive part is arranged close to the first conductive part;

[0020] The thickness of the first conductive part is 31um, the thickness of the second conductive part is 3um, the thickness of the third conductive part is 24um, the thickness of the fourth conductive part is 17um, and the thickness of the fifth conductive part is 10um.

[0021] According to one aspect of the above technical solution, the steps of sequentially forming a plurality of conductive parts with different thicknesses on the transparent protective layer based on an electroplating process to prepare a metal layer arranged in a stepped manner specifically include:

[0022] Electroplating a layer of metal material with a thickness of 3 μm on the transparent protective layer to prepare a first metal layer including the second conductive part and the first material part;

[0023] Electroplating a layer of metal material with a thickness of 7 μm on the first material portion to prepare a second metal layer including the fifth conductive portion and the second material portion;

[0024] Electroplating a layer of metal material with a thickness of 7 μm on the second material portion to prepare a third metal layer including the fourth conductive portion and the third material portion;

[0025] Electroplating a layer of metal material with a thickness of 7 μm on the third material portion to prepare a fourth metal layer including the third conductive portion and the fourth material portion;

[0026] A layer of metal material with a thickness of 7 um is electroplated on the fourth material portion to prepare the first conductive portion.

[0027] According to one aspect of the above technical solution, the step of etching a circuit on the metal layer specifically includes:

[0028] Etching is performed on each of the conductive parts in sequence to form a circuit, and during the etching process, the etching is compensated based on the thickness difference of each of the conductive parts so that the target line width of the circuit structure on each of the conductive parts reaches a preset value;

[0029] Among them, the circuit etching compensation amount on the first conductive part is 25um, the circuit etching compensation amount on the second conductive part is 5um, the circuit etching compensation amount on the third conductive part is 18um, the circuit etching compensation amount on the fourth conductive part is 12um, and the circuit etching compensation amount on the fifth conductive part is 8um. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a schematic diagram of the structure of the crystal film screen in the first embodiment of the present invention;

[0031] Figure 2It is a schematic diagram of the process of the method for preparing a crystal film screen in the second embodiment of the present invention;

[0032] Figure 3 This is a schematic diagram of the product structure obtained in step S111 in the second embodiment of the present invention;

[0033] Figure 4 This is a schematic diagram of the product structure obtained in step S112 in the second embodiment of the present invention;

[0034] Figure 5 This is a schematic diagram of the product structure prepared in step S113 in the second embodiment of the present invention;

[0035] Figure 6 This is a schematic diagram of the product structure prepared in step S114 in the second embodiment of the present invention;

[0036] Figure 7 This is a schematic diagram of the product structure obtained in step S115 in the second embodiment of the present invention;

[0037] Description of main component symbols:

[0038] Transparent protective layer 10, metal circuit layer 20, first conductive part 21, second conductive part 22, third conductive part 23, fourth conductive part 24, fifth conductive part 25, power source 30, first material part 20a, second material part 20b, third material part 20c, fourth material part 20d;

[0039] The following specific implementation manner will further illustrate the present invention in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0040] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0041] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0043] See also Figure 1 , shown is a crystal film screen in the first embodiment of the present invention, including a transparent protective layer 10, a metal circuit layer 20 arranged on one side of the transparent protective layer 10, and a plurality of light-emitting elements (not shown) connected to the metal circuit layer 20 and arranged in an array, an output power supply 30 is provided on one side of the metal circuit layer 20, and the metal circuit layer 20 is composed of a plurality of conductive parts, the conductive parts include a first conductive part 21 close to one end of the output power supply 30, and a second conductive part 22 arranged away from the first conductive part 21, and the thickness of each conductive part decreases successively along the direction from the first conductive part 21 to the second conductive part 22.

[0044] Specifically, the material of the metal circuit layer 20 is one or more of copper, copper-nickel alloy, copper-titanium alloy, copper-molybdenum alloy, and copper-chromium alloy. Preferably, in this embodiment, the material of the metal circuit layer 20 is copper.

[0045] For ease of understanding, the metal circuit layer 20 is arranged in a stepped manner, including a first conductive part 21 close to the power supply 30, a second conductive part 22 away from the power supply 30, and a plurality of conductive parts arranged between the first conductive part 21 and the second conductive part 22 according to different length specifications of the crystal film screen.

[0046] In this embodiment, the conductive part further includes a third conductive part 23, a fourth conductive part 24 and a fifth conductive part 25 which are sequentially arranged between the first conductive part 21 and the second conductive part 22, and the third conductive part 23 is arranged close to the first conductive part 21. It can be understood that since the current in the screen gradually decreases with the increase of the transmission length, in order to balance the heat generation, the more the number of conductive parts in theory, the better the uniformity. The ideal state is that the metal circuit layer 20 is arranged in an inclined surface, and the slope is related to the reduction of the current, so that the heat generation at each conductive part tends to be the same. Considering the processing cost and efficiency, in this embodiment, the number of conductive parts is five, and the length of each part is 200mm.

[0047] Specifically, the thickness of the metal circuit in the prior art is 30um-50um. In this embodiment, the thickness of the first conductive part 21 is 31um, the thickness of the second conductive part 22 is 3um, the thickness of the third conductive part 23 is 24um, the thickness of the fourth conductive part 24 is 17um, and the thickness of the fifth conductive part 25 is 10um. Compared with the prior art, the metal circuit layer 20 in this application is lighter.

[0048] In addition, in the present embodiment, the transparent protective layer 10 is made of PET with a thickness of 50 um-188 um. In the present embodiment, the thickness of the transparent protective layer 10 is preferably 60 um.

[0049] In summary, the crystal film screen in the above embodiment of the present invention, by setting a plurality of conductive parts, the thickness of each conductive part decreases successively along the direction from the first conductive part 21 to the second conductive part 22, which is equivalent to changing the line resistance of each part of the metal circuit layer 20, gradually increasing the current of the circuit away from the power supply 30 side, so that the overall heat generation of the screen is uniform, so as to reduce the color difference effect caused by long-term use and aging of the screen.

[0050] Embodiment 2

[0051] The second embodiment of the present invention provides a method for preparing a crystal film screen, which is used to prepare the crystal film screen described in the above embodiment. Figure 2 As shown, the method comprises the following steps:

[0052] In step S100, a metal layer consisting of a plurality of conductive parts is sequentially prepared on the transparent protective layer 10, wherein the conductive parts include a first conductive part 21 close to one end of the output power supply 30, and a second conductive part 22 arranged away from the first conductive part 21, and the thickness of each conductive part decreases sequentially in the direction from the first conductive part 21 to the second conductive part 22.

[0053] Specifically, in this step, the steps of sequentially preparing a metal layer composed of a plurality of conductive parts on the transparent protective layer 10 specifically include:

[0054] Step S110, a plurality of conductive parts with different thicknesses are sequentially formed on the transparent protective layer 10 based on an electroplating process to prepare a metal layer arranged in a stepped manner, wherein the conductive parts further include a third conductive part 23, a fourth conductive part 24 and a fifth conductive part 25 sequentially arranged between the first conductive part 21 and the second conductive part 22, and the third conductive part 23 is arranged close to the first conductive part 21. In this embodiment, the material of the above-mentioned metal layer is preferably copper.

[0055] Preferably, the thickness of the first conductive part 21 is 31um, the thickness of the second conductive part 22 is 3um, the thickness of the third conductive part 23 is 24um, the thickness of the fourth conductive part 24 is 17um, and the thickness of the fifth conductive part 25 is 10um.

[0056] Furthermore, in this embodiment, the steps of sequentially forming a plurality of conductive portions with different thicknesses on the transparent protective layer 10 based on an electroplating process to prepare a metal layer arranged in a stepped manner specifically include:

[0057] In step S111 , a metal material with a thickness of 3 μm is electroplated on the transparent protective layer 10 to prepare a first metal layer including the second conductive portion 22 and the first material portion 20 a . Figure 3 This is a schematic diagram of the product prepared in step S111 above, such as Figure 3 As shown, the first material portion 20a is the metal material of the other parts of the transparent protective layer 10 except the second conductive portion 22. Preferably, the length of the electroplating in this step is 1000 mm.

[0058] Step S112: electroplating a layer of metal material with a thickness of 7 um on the first material portion 20 a to prepare a second metal layer including the fifth conductive portion 25 and the second material portion 20 b. Figure 4 This is a schematic diagram of the product prepared in step S112. Preferably, the length of the electroplating in this step is 800 mm.

[0059] Step S113, electroplating a layer of metal material with a thickness of 7 um on the second material portion 20b to prepare a third metal layer including the fourth conductive portion 24 and the third material portion 20c. Figure 5 This is a schematic diagram of the product prepared in step S113. Preferably, the length of the electroplating in this step is 600 mm.

[0060] Step S114, electroplating a layer of metal material with a thickness of 7 um on the third material portion 20c to prepare a fourth metal layer including the third conductive portion 23 and the fourth material portion 20d. Figure 6 This is a schematic diagram of the product prepared in step S114. Preferably, the length of the electroplating in this step is 400 mm.

[0061] Step S115 , electroplating a layer of metal material with a thickness of 7 um on the fourth material portion 20 d to prepare the first conductive portion 21 . Figure 7 This is a schematic diagram of the product prepared in the above step S115. Preferably, the electroplating length in this step is 200 mm.

[0062] It should be noted that the metal layer in the prior art is also formed by layer-by-layer thickening through an electroplating process, with each thickening being 3um-7um, until a metal layer with a thickness of 30um is formed, and then a circuit structure is formed by etching on the metal layer. Compared with the present application, the metal layer prepared by the present application can obtain the required stepped metal structure only by controlling the electroplating area of ​​each layer, and the number of electroplating layers is unchanged compared with the prior art, that is, the complexity of the preparation process is not increased, and the amount of metal material used is reduced, the processing cost is reduced, and the product quality is reduced, while achieving the beneficial effect of making the overall heat generation of the screen uniform, so as to reduce the color difference effect caused by the screen aging after long-term use.

[0063] It can be understood that in other embodiments of the present application, the preparation of the above-mentioned metal layer can also be achieved by processes such as magnetron sputtering.

[0064] Step S200, etching to form a circuit on the metal layer to prepare a metal circuit layer 20. Specifically, in this step, the step of etching to form a circuit on the metal layer specifically includes:

[0065] Etching is performed on each of the conductive parts in sequence to form a circuit, and during the etching process, the etching is compensated based on the thickness difference of each of the conductive parts so that the target line width of the circuit structure on each of the conductive parts reaches a preset value;

[0066] Among them, the circuit etching compensation amount on the first conductive part 21 is 25um, the circuit etching compensation amount on the second conductive part 22 is 5um, the circuit etching compensation amount on the third conductive part 23 is 18um, the circuit etching compensation amount on the fourth conductive part 24 is 12um, and the circuit etching compensation amount on the fifth conductive part 25 is 8um.

[0067] It should be noted that for different copper thicknesses, when designing the circuit, in order to achieve the target line width of 100um, copper of different thicknesses needs to be compensated differently. Taking the first conductive part 21 as an example, when the copper is 31um thick, the single-sided compensation is 25um. The actual designed film line width is 150um, and the line width after etching is 100um.

[0068] Step S300 , arranging a plurality of light emitting elements in an array on the metal circuit layer 20 to obtain a crystal film screen.

[0069] Embodiment 3

[0070] The second embodiment of the present invention provides a method for preparing a crystal film screen, which is used to prepare the crystal film screen described in the above embodiment. The preparation method in this embodiment is basically the same as the preparation method in the second embodiment, except that:

[0071] The steps of sequentially preparing a metal layer composed of a plurality of conductive parts on the transparent protective layer 10 specifically include:

[0072] Preparing a metal plate layer on the transparent protective layer 10;

[0073] Partition etching is performed sequentially on the metal plate layer to prepare a metal layer consisting of a plurality of conductive parts, wherein the etching depth increases sequentially along the direction from the first conductive part 21 to the second conductive part 22 .

[0074] For ease of understanding, the above steps in this embodiment are equivalent to etching the entire copper material in sections to obtain the desired stepped metal circuit layer 20 .

[0075] Specifically, in this embodiment, the copper thickness of the raw material is 30um. The conventional prior art is to directly etch a circuit structure on a 30um copper thick material plate, while this solution is equivalent to partitioning the metal layer before etching.

[0076] The length of the crystal film screen used in this embodiment is 1000mm, which is divided into five conductive parts, and the length of each conductive part is 200mm. The etching depth of the second conductive part 22 far away from the power supply 30 is 27um, and the etching depths of the fifth conductive part 25, the fourth conductive part 24, the third conductive part 23, and the first conductive part 21 are 20um, 15um, 7um, and 0um respectively. That is, the conductive part close to the power supply 30 is not etched, the thickness of the first conductive part 21 is 30um, the thickness of the second conductive part 22 is 3um, the thickness of the third conductive part 23 is 22um, the thickness of the fourth conductive part 24 is 15um, and the thickness of the fifth conductive part 25 is 10um.

[0077] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A crystal film screen, characterized in that: The device comprises a transparent protective layer, a metal circuit layer disposed on one side of the transparent protective layer, and a plurality of light-emitting elements connected to the metal circuit layer and arranged in an array, wherein an output power supply is disposed on one side of the metal circuit layer, and the metal circuit layer is composed of a plurality of conductive parts, wherein the conductive parts include a first conductive part close to one end of the output power supply, and a second conductive part disposed away from the first conductive part, and the thickness of each conductive part decreases in sequence from the first conductive part to the second conductive part; The method for preparing the crystal film screen comprises the following steps: Providing a PET film as a transparent protective layer; A metal layer consisting of a plurality of conductive parts is sequentially formed on the transparent protective layer, wherein the conductive parts include a first conductive part close to one end of the output power supply and a second conductive part arranged away from the first conductive part, and the thickness of each conductive part decreases sequentially from the first conductive part to the second conductive part; Etching to form a circuit on the metal layer to prepare a metal circuit layer; Arranging a plurality of light-emitting elements in an array on the metal circuit layer to obtain a crystal film screen; The steps of sequentially preparing a metal layer composed of a plurality of conductive parts on the transparent protective layer specifically include: Preparing a metal plate layer on the transparent protective layer; Sequentially performing zone etching on the metal plate layer to prepare a metal layer consisting of a plurality of conductive parts, wherein the etching depth increases sequentially along the direction from the first conductive part to the second conductive part; The steps of sequentially preparing a metal layer composed of a plurality of conductive parts on the transparent protective layer specifically include: A plurality of conductive parts with different thicknesses are sequentially formed on the transparent protective layer based on an electroplating process to prepare a metal layer arranged in a stepped manner, wherein the conductive parts further include a third conductive part, a fourth conductive part and a fifth conductive part sequentially arranged between the first conductive part and the second conductive part, and the third conductive part is arranged close to the first conductive part; The thickness of the first conductive part is 31um, the thickness of the second conductive part is 3um, the thickness of the third conductive part is 24um, the thickness of the fourth conductive part is 17um, and the thickness of the fifth conductive part is 10um; The steps of sequentially forming a plurality of conductive parts with different thicknesses on the transparent protective layer based on an electroplating process to prepare a metal layer arranged in a stepped manner specifically include: Electroplating a layer of metal material with a thickness of 3 μm on the transparent protective layer to prepare a first metal layer including the second conductive part and the first material part; Electroplating a layer of metal material with a thickness of 7 μm on the first material portion to prepare a second metal layer including the fifth conductive portion and the second material portion; Electroplating a layer of metal material with a thickness of 7 μm on the second material portion to prepare a third metal layer including the fourth conductive portion and the third material portion; Electroplating a layer of metal material with a thickness of 7 μm on the third material portion to prepare a fourth metal layer including the third conductive portion and the fourth material portion; A layer of metal material with a thickness of 7 um is electroplated on the fourth material portion to prepare the first conductive portion.

2. The crystal film screen according to claim 1, characterized in that: The material of the metal circuit layer is one or more of copper, copper-nickel alloy, copper-titanium alloy, copper-molybdenum alloy, and copper-chromium alloy.

3. The crystal film screen according to claim 1, characterized in that: The step of etching a circuit on the metal layer specifically includes: Etching is performed on each of the conductive parts in sequence to form a circuit, and during the etching process, the etching is compensated based on the thickness difference of each of the conductive parts so that the target line width of the circuit structure on each of the conductive parts reaches a preset value; Among them, the circuit etching compensation amount on the first conductive part is 25um, the circuit etching compensation amount on the second conductive part is 5um, the circuit etching compensation amount on the third conductive part is 18um, the circuit etching compensation amount on the fourth conductive part is 12um, and the circuit etching compensation amount on the fifth conductive part is 8um.

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