A dual-polarization dual-frequency base station antenna

Abstract

The embodiment of the present application provides a dual-polarization dual-frequency base station antenna. The antenna includes a high-frequency patch resonator, a first dielectric substrate layer, a low-frequency patch resonator, a second dielectric substrate layer, a common metal layer, a third dielectric substrate layer and a feed network layer stacked in sequence from top to bottom. Among them, four through-hole groups are provided on the first dielectric substrate layer, the second dielectric substrate layer and the third dielectric substrate layer in the vertical direction, and the four through-hole groups are symmetrically arranged relative to the target axis of the dual-polarization dual-frequency base station antenna, and the angles formed by the two through-holes on each through-hole group and the target axis are the same, and the feeder on the feed network layer is electrically connected to the high-frequency patch resonator on the top layer through the through-hole. The antenna is used to reduce the high-order modes of the resonator, suppress harmonics, better adapt to the application environment of 5G communication base stations, and improve the performance and efficiency of 5G communication base stations.

Description

Technical Field

[0001] The present application relates to the field of communication technology, and in particular to a dual-polarization dual-frequency base station antenna. Background Art

[0002] With the development of 5G communication technology, data transmission rate, spectrum utilization, energy efficiency and communication connection reliability are improved, network latency is reduced, and 5G networks support large-scale device connections and can connect millions of devices at the same time. Therefore, in the 5G communication era, the demand for high-performance antennas has become more complex and stringent.

[0003] At present, engineers mainly use dual-polarization dual-frequency antennas to simultaneously support multiple frequency bands and polarization modes, improve spectrum utilization and communication capacity, and reduce multipath interference and polarization interference.

[0004] However, the existing dual-polarization dual-frequency antenna has poor ability to suppress harmonics, and the generated harmonics will interfere with the communication of other frequency bands of the antenna and reduce the antenna performance. Summary of the invention

[0005] The embodiment of the present application provides a dual-polarization dual-band base station antenna, which is used to reduce the high-order modes of the resonator, suppress harmonics, better adapt to the application environment of 5G communication base stations, and improve the performance and efficiency of 5G communication base stations.

[0006] The present application provides a dual-polarization dual-frequency base station antenna, including:

[0007] A high-frequency patch resonator, a first dielectric substrate layer, a low-frequency patch resonator, a second dielectric substrate layer, a common metal ground layer, a third dielectric substrate layer and a feed network layer are stacked in sequence from top to bottom;

[0008] Four through hole groups are provided on the first dielectric substrate layer, the second dielectric substrate layer and the third dielectric substrate layer in the vertical direction, and the four through hole groups are symmetrically arranged relative to the target axis of the dual-polarization dual-frequency base station antenna, the angles formed by the two through holes on each through hole group and the target axis are the same, and the feed line on the feed network layer is electrically connected to the high-frequency patch resonator on the top layer through the through hole.

[0009] In one possible implementation, the first dielectric substrate layer, the second dielectric substrate layer, the common metal ground layer, and the third dielectric substrate layer are consistent in size and shape; the size of the high-frequency patch resonator and the low-frequency patch resonator are both smaller than the size of the first dielectric substrate layer, and the size of the high-frequency patch resonator is smaller than the size of the low-frequency patch resonator.

[0010] In a possible implementation, a circular etched area aligned with the through hole is etched on the low-frequency patch resonator, and the diameter of the circular etched area is greater than the diameter of the through hole.

[0011] In a possible implementation, a numerical ratio between a diameter of a circular etched region on the low-frequency patch resonator and a diameter of the through hole is (3-3.5):1.

[0012] In a possible implementation manner, a circular etched area aligned with the through hole is etched on the common metal layer, and the diameter of the circular etched area is larger than the diameter of the through hole.

[0013] In one possible implementation, the diameter of the circular etched area on the common metal layer is the same as the diameter of the circular etched area on the low frequency patch resonator.

[0014] In a possible implementation manner, the diameter of the through hole on the first dielectric substrate layer, the diameter of the through hole on the second dielectric substrate layer, and the diameter of the through hole on the third dielectric substrate layer are all the same.

[0015] In a possible implementation, the shortest distance between the edge of the high-frequency patch resonator and the edge of the first dielectric substrate layer is greater than the first target distance, and the first target distance satisfies:

[0016]

[0017] Wherein, L1 is the first target distance; λ1 is the wavelength of the electromagnetic wave in free space; n1 is the relative dielectric constant of the first dielectric substrate layer; c is the speed of light; f1 is the resonant frequency of the high-frequency patch resonator;

[0018] The shortest distance between the edge of the low-frequency patch resonator and the second dielectric substrate layer is greater than the second target distance, and the second target distance satisfies:

[0019]

[0020] Wherein, L2 is the second target distance; λ2 is the wavelength of the electromagnetic wave in free space; n2 is the relative dielectric constant of the second dielectric substrate layer; c is the speed of light; and f2 is the resonant frequency of the low-frequency patch resonator.

[0021] In a possible implementation manner, the angle formed by the two through holes in each through hole group and the target axis is 58°-62°.

[0022] In a possible implementation manner, a first T-type power divider, a second T-type power divider, a third T-type power divider and a fourth T-type power divider are provided on the feed network layer, wherein:

[0023] The first T-type power divider, the second T-type power divider, the third T-type power divider and the fourth T-type power divider are symmetrically distributed on the vertical bisector of the third dielectric substrate layer in a clockwise direction relative to the center of the third dielectric substrate layer, wherein the first T-type power divider and the third T-type power divider constitute a first polarization channel, and the second T-type power divider and the fourth T-type power divider constitute a second polarization channel.

[0024] In a possible implementation, two output ends of the first T-type power divider, two output ends of the second T-type power divider, two output ends of the third T-type power divider, and two output ends of the fourth T-type power divider are respectively arranged in one-to-one correspondence with the two through holes of each through hole group.

[0025] The embodiment of the present application provides a dual-polarization dual-frequency base station antenna, through the high-frequency patch resonator, the first dielectric substrate layer, the low-frequency patch resonator, the second dielectric substrate layer, the common metal layer, the third dielectric substrate layer and the feeding network arranged in sequence from top to bottom, four through-hole groups are opened in the vertical direction on the first dielectric substrate layer, the second dielectric substrate layer, the common metal layer and the third dielectric substrate layer, and the four through-hole groups are symmetrically arranged relative to the target axis of the dual-polarization dual-frequency base station antenna, and the two through-hole groups on each through-hole group form the same angle with the target axis, and the feeder on the feeding network layer is electrically connected to the topmost high-frequency patch resonator through the through-hole. The differential signal of the feeding network layer forms a symmetrical current path after passing through the coaxial line and the through-hole group, which can effectively control the electromagnetic field distribution of the resonant mode on the patch, suppress the electromagnetic field of the harmonic component, reduce the interference of the harmonic on the main signal, and better adapt to the application environment of the 5G communication base station, and improve the performance and efficiency of the 5G communication base station. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0027] Figure 1 A schematic diagram of the structure of the dual-polarization dual-frequency base station antenna provided for this application;

[0028] Figure 2 A front view of the dual-polarization dual-frequency base station antenna structure provided in this application;

[0029] Figure 3 A schematic diagram of the structure of the feed network layer of the dual-polarization dual-frequency base station antenna provided by the present invention;

[0030] Figure 4 The S parameters and gain diagram of the dual-polarization dual-frequency base station antenna provided by the present invention that vary with frequency;

[0031] Figure 5This is a simulation diagram of the radiation direction of the dual-polarization dual-frequency base station antenna provided by the present invention.

[0032] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments.

[0033] Description of reference numerals:

[0034] 1: first dielectric substrate layer; 2: second dielectric substrate layer; 3: common metal ground layer; 4: third dielectric substrate layer; 5: high-frequency patch resonator; 6: low-frequency patch resonator;

[0035] 7a, 7b, 8a, 8b, 9a, 9b, 10a, 10b: through holes of the same size and shape on the first dielectric substrate layer; 7c, 7d, 8c, 8d, 9c, 9d, 10c, 10d: through holes of the same size and shape on the second dielectric substrate layer; 7i, 7g, 8i, 8g, 9i, 9g, 10i, 10g: through holes of the same size and shape on the third dielectric substrate layer;

[0036] (7a, 7b), (8a, 8b), (9a, 9b), (10a, 10b): four through-hole groups on the first dielectric substrate layer; (7c, 7d), (8c, 8d), (9c, 9d), (10c, 10d): four through-hole groups on the second dielectric substrate layer; (7g, 7i), (8g, 8i), (9g, 9i), (10g, 10i): four through-hole groups on the third dielectric substrate layer;

[0037] 11, 12, 13, 14, 15, 16, 17, 18: circular etched areas of the same shape and size on the resonator;

[0038] 7e, 7f, 8e, 8f, 9e, 9f, 10e, 10f: circular etched areas of the same shape and size on the common metal formation;

[0039] L1: first target distance; L2: second target distance; L: target axis;

[0040] 410: Feed network layer;

[0041] 41, 42: output ends of the first T-type power divider; 43, 44: output ends of the second T-type power divider; 45, 46: output ends of the third T-type power divider; 47, 48: output ends of the fourth T-type power divider;

[0042] U1: first port; U2: second port; U3: third port; U4: fourth port;

[0043] T1: the first T-type power divider; T2: the second T-type power divider; T3: the third T-type power divider; T4: the fourth T-type power divider. DETAILED DESCRIPTION

[0044] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0045] First, the terms involved in this application are explained:

[0046] High frequency patch resonator: refers to a patch antenna element used in higher frequency bands, which usually has a smaller physical size to accommodate higher operating frequencies.

[0047] The first dielectric substrate layer refers to the dielectric layer used to provide mechanical support and adjust electromagnetic characteristics in the antenna structure. In this embodiment, the first dielectric substrate layer is used to support the high-frequency patch resonator and affect its electromagnetic characteristics, such as resonant frequency and bandwidth. It is usually made of low-loss materials, such as FR4, Rogers, etc.

[0048] Low frequency patch resonator: refers to a patch antenna element used in lower frequency bands, which usually has a larger physical size to accommodate the lower operating frequency.

[0049] The second dielectric substrate layer is used to provide mechanical support and adjust electromagnetic properties. In this embodiment, the second dielectric substrate layer is used to support the low-frequency patch resonator and affect the electromagnetic properties of the low-frequency patch resonator. It is usually made of low-loss materials such as FR4, Rogers, etc.

[0050] Common metal layer: refers to the substrate layer used to provide electromagnetic shielding and ground plane to reduce electromagnetic interference between different frequency bands.

[0051] The third dielectric substrate layer refers to a substrate layer used to provide mechanical support and electromagnetic property adjustment and support the feeding network.

[0052] Feed network layer: refers to the layer structure used to distribute RF signals to low-frequency patch resonators and high-frequency patch resonators to achieve differential feeding and impedance matching.

[0053] Target axis: refers to the axis connected by the center of the high-frequency patch resonator, the center of the first dielectric substrate layer, the center of the low-frequency patch resonator, the center of the second dielectric substrate layer, the center of the common metal ground layer, the center of the third dielectric substrate layer and the center of the feed network layer. The target axis is perpendicular to the high-frequency patch resonator, the first dielectric substrate layer, the low-frequency patch resonator, the second dielectric substrate layer, the common metal ground layer, the third dielectric substrate layer and the feed network layer.

[0054] In existing technologies, engineers mainly use dual-polarization dual-frequency antennas to support multiple frequency bands and polarization modes at the same time, improve spectrum utilization and communication capacity, and reduce multipath interference and polarization interference. However, the existing dual-polarization dual-frequency antennas have poor harmonic suppression capabilities, and the generated harmonics will interfere with the communication of other frequency bands of the antenna, reducing antenna performance.

[0055] The embodiment of the present application provides a dual-polarization dual-frequency base station antenna, which is arranged in sequence from top to bottom through a high-frequency patch resonator, a first dielectric substrate layer, a low-frequency patch resonator, a second dielectric substrate layer, a common metal layer, a third dielectric substrate layer and a feeding network, and four through-hole groups are provided on the first dielectric substrate layer, the second dielectric substrate layer and the third dielectric substrate layer in the vertical direction, and the four through-hole groups are symmetrically arranged relative to the target axis of the dual-polarization dual-frequency base station antenna, and the two through-hole groups on each through-hole group have the same angle with the target axis, and the feeder on the feeding network layer is electrically connected to the high-frequency patch resonator on the top layer through the through-hole. The differential signal of the feeding network layer forms a symmetrical current path after passing through the coaxial line and the through-hole group, which can effectively balance and disperse the harmonic components in the electromagnetic field, reduce the interference of harmonics on the main signal, better adapt to the application environment of 5G communication base stations, and improve the performance and efficiency of 5G communication base stations.

[0056] The technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems are described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0057] Figure 1 The schematic diagram of the structure of the dual-polarization dual-frequency base station antenna provided in this application is as follows: Figure 1 As shown, the dual-polarization dual-band base station antenna includes: a first dielectric substrate layer 1, a second dielectric substrate layer 2, a common metal layer 3 and a third dielectric substrate layer 4 stacked in sequence from top to bottom, wherein a high-frequency patch resonator 5 is arranged on the upper surface of the first dielectric substrate layer 1, a low-frequency patch resonator 6 is arranged between the first dielectric substrate layer 1 and the second dielectric substrate layer 2, and the low-frequency patch resonator 6 can be attached to the upper surface of the second dielectric substrate layer 2, and a feeding network layer is also arranged below the common metal layer 3.

[0058] Among them, the high-frequency patch resonator 5, the low-frequency patch resonator 6 and the feed network layer are all planar structures, thereby reducing the profile height of the entire dual-polarization dual-frequency base station antenna. The feed network layer below the third dielectric substrate layer 4 also adopts a planar design, which can further reduce the profile height of the dual-polarization dual-frequency base station antenna, and can effectively utilize space to achieve a compact design of the antenna. The antenna stacking design can also reduce the overall volume of the antenna, achieving miniaturization and low profile effects. In addition, the stacking structure helps to improve the performance of the antenna, so that it exhibits a higher gain in dual-polarization and dual-frequency applications.

[0059] In the embodiment of the present application, the high-frequency patch resonator 5 and the low-frequency patch resonator 6 can select a specific frequency to work. By adjusting the size, shape or material of the resonator, its resonant frequency can be adjusted so that the antenna works within a predetermined frequency band. The high-frequency resonator 5 is designed for the high-frequency band, while the low-frequency resonator 6 is used for the low-frequency band. The size of the high-frequency patch resonator 5 is small. By reducing the size of the high-frequency patch resonator 5, its resonant frequency will increase, thereby realizing the resonance of the high-frequency band; the size of the low-frequency resonator 6 is large. By increasing the size of the low-frequency patch resonator 6, its resonant frequency will decrease, thereby realizing the resonance of the low-frequency band. By adjusting the size of the high-frequency patch resonator 5 and the low-frequency patch resonator 6, the two working frequency bands of the antenna can be controlled respectively, thereby realizing the dual-frequency function. At the same time, the low-frequency patch resonator and the high-frequency patch resonator play different roles in different dielectric layers, and they jointly determine the common radiation aperture of the antenna, and the common radiation aperture of each dielectric layer and metal layer in the dual-polarization dual-frequency base station antenna. Exemplarily, in this embodiment, the target resonant frequency of the low-frequency patch resonator 6 can be 3.5 GHz, and the target resonant frequency of the high-frequency patch resonator 5 can be 4.8 GHz; the radius size of the high-frequency patch resonator 5 and the low-frequency patch resonator 6 can be determined by the target resonant frequency, the thickness of the dielectric substrate and the relative dielectric constant.

[0060] Four through-hole groups are provided on the first dielectric substrate layer 1, the second dielectric substrate layer 2 and the third dielectric substrate layer 4 in the vertical direction, and the four through-hole groups are symmetrically arranged relative to the target axis of the dual-polarization dual-frequency base station antenna, and the angles formed by the two through-holes on each through-hole group and the target axis are the same, and the feeder on the feed network layer is electrically connected to the high-frequency patch resonator on the top layer through the through-holes. Among them, the four through-hole groups on the first dielectric substrate layer 1 are (7a, 7b), (8a, 8b), (9a, 9b) and (10a, 10b); the four through-hole groups on the second dielectric substrate layer 2 are (7c, 7d), (8c, 8d), (9c, 9d) and (10c, 10d); the four through-hole groups on the third dielectric substrate layer 4 are (7g, 7i), (8g, 8i), (9g, 9i) and (10g, 10i).

[0061] Among them, a through hole is also opened on the high-frequency patch resonator 5, and the through hole on the high-frequency patch resonator 5 can be aligned with the eight through holes 7a, 7b, 8a, 8b, 9a, 9b, 10a, and 10b on the first dielectric substrate layer 1. In the embodiment of the present application, the through hole on the high-frequency patch resonator 5 can be used as a feeding point to realize signal feeding and current path control, so that the signal of the feeding network layer can be received to realize electrical connection and signal transmission in the dual-polarization dual-frequency base station antenna.

[0062] The excitation work of the high-frequency patch resonator 5 can be excited by the eight through holes 7a, 7b, 8a, 8b, 9a, 9b, 10a, and 10b of the first dielectric substrate layer 1 as feeding points. When the high-frequency resonator 5 on the first dielectric substrate layer 1 is fed and excited, the generated electromagnetic field can be coupled to the low-frequency patch resonator 6 on the second dielectric substrate layer 2, thereby exciting the TM of the corresponding frequency band of the low-frequency patch resonator 6. 11 This coupling mechanism can achieve dual-band operation without the need to design a separate feeding network on the second dielectric substrate layer 2, which can reduce the additional feeding network, thereby reducing the complexity of the antenna and indirectly reducing the chance of generating and radiating harmonics. Among them, it should be noted that TM 11 Mode refers to a specific electromagnetic wave mode propagating in a circular patch resonator; in the TM (Transverse Magnetic) mode, the magnetic field component of the electromagnetic wave is perpendicular to the propagation direction, while the electric field component has a longitudinal component; 11 represents a specific distribution mode of the electromagnetic wave in a circular patch resonator, the first "1" indicates that there is a half-wavelength electric field distribution in the radial direction, and the second "1" indicates that there is a full wavelength distribution in the angular direction; TM 11 The mode is usually the basic operating mode of a circular patch antenna, which has good radiation characteristics.

[0063] A circular etched area is also provided on the low-frequency patch resonator 6. The circular etched area on the low-frequency patch resonator 6 can be aligned with the eight through holes 7c, 7d, 8c, 8d, 9c, 9d, 10c and 10d on the second dielectric substrate layer 2 in a one-to-one correspondence. In the embodiment of the present application, the circular etched area on the low-frequency patch resonator 6 is used to guide the signal while controlling the electromagnetic coupling between the low-frequency patch resonator 6 and the high-frequency patch resonator 5, thereby optimizing the overall performance of the antenna.

[0064] The four through hole groups (7c, 7d), (8c, 8d), (9c, 9d) and (10c, 10d) on the second dielectric substrate layer 2 are used to ensure that the signal on the feed network layer passes smoothly through the second dielectric substrate layer 2 and is finally transmitted to the high-frequency patch resonator 5.

[0065] Four groups of circular etched areas (7e, 7f), (8e, 8f), (9e, 9f) and (10e, 10f) etched on the common metal layer 3 are used to guide the signal and provide necessary shielding so that the signal can pass smoothly while avoiding interference between signals in different layers.

[0066] The four through hole groups (7g, 7i), (8g, 8i), (9g, 9i) and (10g, 10i) on the third dielectric substrate layer 4 are used to ensure that the signal on the feed network layer smoothly passes through the third dielectric substrate layer 4 to be electrically connected to the structures in other layers, thereby completing the signal transmission.

[0067] Among them, 7a, 7d and 7i are connected in sequence from top to bottom, 7b, 7c and 7g are connected in sequence from top to bottom, 8a, 8d and 8i are connected in sequence from top to bottom, 8b, 8c and 8g are connected in sequence from top to bottom, 9a, 9d and 9i are connected in sequence from top to bottom, 9b, 9c and 9g are connected in sequence from top to bottom, 10a, 10d and 10i are connected in sequence from top to bottom, and 10b, 10c and 10g are connected in sequence from top to bottom.

[0068] Four through hole groups are provided on the first dielectric substrate layer 1, the second dielectric substrate layer 2 and the third dielectric substrate layer 4 along the vertical direction, and the four through hole groups are symmetrically arranged relative to the target axis L of the dual-polarization dual-frequency base station antenna. For example, taking the first dielectric substrate layer as an example, (7a, 7b) and (8a, 8b) are symmetrical relative to the target axis L, and (9a, 9b) and (10a, 10b) are symmetrical relative to the target axis L.

[0069] The angles formed by the two through holes on each through hole group and the target axis L are the same, which can ensure the symmetry of each layer structure, make the electromagnetic field propagation in the antenna structure more uniform, help optimize the radiation mode and polarization characteristics of the antenna, and ensure the stability of the antenna performance. Exemplarily, taking the first dielectric substrate layer as an example, the distances from 7a, 7b, 8a, 8b, 9a, 9b, 10a and 10b to the target axis L in the through hole groups (7a, 7b), (8a, 8b), (9a, 9b) and (10a, 10b) are equal; the angles formed by 7a, 7b and the target axis L are the same as the angles formed by 8a, 8b and the target axis L, the angles formed by 9a, 9b and the target axis L, and the angles formed by 10a, 10b and the target axis L, so that when the signal passes through the through holes from the feed network layer to different resonators, it can be evenly coupled to different polarization modes of the antenna, thereby supporting dual-polarization operation. The angles formed by the two through holes in each through hole group and the target axis are the same, which can also reduce mutual interference when the antenna works in different polarization directions, realize effective separation of different polarization signals, ensure that the antenna can process dual-polarization signals simultaneously without causing performance degradation, and effectively reduce harmonics and interference signals.

[0070] In an embodiment of the present application, the angle formed by the two through holes in each through hole group and the target axis is 58°~62°, for example, the angle between 7a and 7b can be 60°; the angle between 7a and 7b can be 58°; or the angle between 7a and 7b can be 62°.

[0071] In the embodiment of the present application, a circular etched area aligned with the through hole is etched on the low-frequency patch resonator, and the diameter of the circular etched area is larger than the diameter of the through hole.

[0072] Among them, the circular etched areas 11, 12, 13, 14, 15, 16, 17 and 18 on the low-frequency patch resonator 6 are aligned with 7c, 7d, 9c, 9d, 8c, 8d, 10c and 10d respectively, and the circular etched areas are used to optimize the coupling excitation of the low-frequency patch resonator 6. The through holes 7c, 7d, 8c, 8d, 9c, 9d, 10c and 10d transmit electromagnetic energy to the low-frequency patch resonator 6 through these circular etched areas. Since the diameter of the circular etched area is larger than the diameter of the through hole, it can effectively receive the electromagnetic field transmitted from the through hole and form a suitable coupling area on the low-frequency patch resonator 6. In addition, the diameter of the circular etched area is larger than the diameter of the through hole, which can increase the receiving area aligned with the through hole. The enlarged coupling area helps to improve the coupling efficiency between the low-frequency patch resonator 6 and the high-frequency resonator 5, so that the electromagnetic energy can be transmitted from the high-frequency resonator 5 to the low-frequency resonator 6.

[0073] In the embodiment of the present application, the numerical ratio between the diameter of the circular etched area on the low-frequency patch resonator 6 and the diameter of the through hole is (3-3.5):1.

[0074] Among them, the numerical ratio between the diameter of the circular etched areas 11, 12, 13, 14, 15, 16, 17 and 18 and the diameter of the through holes 7c, 7d, 8c, 8d, 9c, 9d, 10c and 10d on the second dielectric substrate layer 2 is (3-3.5): 1, which can help improve the impedance matching of the low-frequency patch resonator 6, so that it can better match the feed network layer, thereby improving the overall performance and efficiency of the antenna. Exemplarily, the numerical ratio between the diameter of the circular etched area and the diameter of the through hole on the second dielectric substrate layer 2 can be 3.2: 1; the numerical ratio between the diameter of the circular etched area and the diameter of the through hole on the second dielectric substrate layer 2 can be 3: 1; the numerical ratio between the diameter of the circular etched area and the diameter of the through hole on the second dielectric substrate layer 2 can be 3.5: 1.

[0075] In the embodiment of the present application, the diameter of the circular etched area on the common metal layer is the same as the diameter of the upper circular etched area of ​​the low-frequency patch resonator.

[0076] The diameters of the circular etched areas 7e, 7f, 8e, 8f, 9e, 9f, 10e and 10f on the common metal layer 3 are the same as the diameters of the circular etched areas 11, 12, 13, 14, 15, 16, 17 and 18 of the low-frequency patch resonator 6. The diameter of the circular etched area on the common metal layer 3 is the same as the diameter of the circular etched area on the low-frequency patch resonator 6, which can ensure that the electromagnetic energy transmitted to the high-frequency patch resonator is maximized and improve the performance of the resonator; it can make the impedance matching between the feed network layer and the resonator more accurate, thereby reducing reflection and transmission losses and improving the efficiency of the entire system; it can also reduce parasitic signals or unnecessary electromagnetic interference caused by size mismatch.

[0077] In the embodiment of the present application, the diameter of the through hole on the first dielectric substrate layer, the diameter of the through hole on the second dielectric substrate layer, and the diameter of the through hole on the third dielectric substrate layer are all the same.

[0078] Among them, the diameters of the through holes 7a, 7b, 8a, 8b, 9a, 9b, 10a and 10b on the first dielectric substrate layer, the diameters of the through holes 7c, 7d, 8c, 8d, 9c, 9d, 10c and 10d on the second dielectric substrate layer, and the diameters of the through holes 7g, 7i, 8g, 8i, 9g, 9i, 10g and 10i on the third dielectric substrate layer are all the same, which can ensure that the transmission paths of the electromagnetic field between different substrate layers are consistent, avoiding signal reflection or loss caused by differences in through hole diameters; and can reduce signal reflection caused by impedance mismatch between different layers, thereby improving the overall performance of the antenna system.

[0079] In the embodiment of the present application, the shortest distance between the edge of the high-frequency patch resonator and the edge of the first dielectric substrate layer is greater than the first target distance, and the first target distance satisfies:

[0080]

[0081] Wherein, L1 is the first target distance; λ1 is the wavelength of the electromagnetic wave in free space; n1 is the relative dielectric constant of the first dielectric substrate layer; c is the speed of light; f1 is the resonant frequency of the high-frequency patch resonator;

[0082] The shortest distance between the edge of the low-frequency patch resonator and the second dielectric substrate layer is greater than the second target distance, and the second target distance satisfies:

[0083]

[0084] Wherein, L2 is the second target distance; λ2 is the wavelength of the electromagnetic wave in free space; n2 is the relative dielectric constant of the second dielectric substrate layer; c is the speed of light; and f2 is the resonant frequency of the low-frequency patch resonator.

[0085] Figure 2 The front view of the dual-polarization dual-frequency base station antenna structure provided in this application is as follows: Figure 2 As shown, the dual-polarization dual-frequency base station antenna includes: a high-frequency patch resonator 5, a first dielectric substrate layer 1, a low-frequency patch resonator 6, a second dielectric substrate layer 2, a common metal ground layer 3, a third dielectric substrate layer 4 and a feed network layer 410 stacked in sequence from top to bottom.

[0086] In the embodiment of the present application, the sizes and shapes of the first dielectric substrate layer 1, the second dielectric substrate layer 2, the common metal ground layer 3, and the third dielectric substrate layer 4 are consistent; the sizes of the high-frequency patch resonator 5 and the low-frequency patch resonator 6 are both smaller than the size of the first dielectric substrate layer 1, and the size of the high-frequency patch resonator 5 is smaller than the size of the low-frequency patch resonator 6.

[0087] The first dielectric substrate layer 1, the second dielectric substrate layer 2, the common metal ground layer 3, the third dielectric substrate layer 4, and the feed network layer 410 can all be set to a square, and the length and width of the square are the same. The thickness of the first dielectric substrate layer 1, the second dielectric substrate layer 2, and the third dielectric substrate layer 3 is determined according to the dielectric constant of the material of the dielectric substrate layer and the target frequency of the resonator on the dielectric substrate.

[0088] Figure 3 The schematic diagram of the structure of the feeding network layer of the dual-polarization dual-frequency base station antenna provided by the present invention. Figure 3 As shown, the feed network layer includes a first T-type power divider, a second T-type power divider, a third T-type power divider and a fourth T-type power divider.

[0089] Among them, the first T-type power divider T1, the second T-type power divider T2, the third T-type power divider T3 and the fourth T-type power divider T4 are symmetrically distributed on the vertical bisector of the third dielectric substrate layer in a clockwise direction relative to the center of the third dielectric substrate layer, wherein the first T-type power divider T1 and the third T-type power divider T3 constitute a first polarization channel, and the second T-type power divider T2 and the fourth T-type power divider T4 constitute a second polarization channel.

[0090] Among them, the T-junction power divider is a common RF and microwave circuit element, which is used to divide the input signal into multiple output signals, or to synthesize multiple input signals into one output signal. It is widely used in antenna arrays, signal processing, wireless communications and radar systems. The T-type power divider usually consists of three ports: an input port and two output ports, and its basic structure can be realized by a transmission line and a matching network. In an embodiment of the present application, the width and length of the first T-type power divider T1, the second T-type power divider T2, the third T-type power divider T3 and the fourth T-type power divider T4 are determined according to the operating frequency of the high-frequency patch resonator 5 and the low-frequency patch resonator 6 and the characteristics of the material of the third dielectric substrate layer 4.

[0091] The first port U1 and the second port U2 of the first polarization channel are used to input a differential signal. The input differential signal is transmitted to the high-frequency patch resonator 5 through the feeding network, exciting the TM 11 mode, and the signal will also be coupled to the low-frequency patch resonator 6, exciting the TM of the low-frequency patch resonator 6 11 The third port U3 and the fourth port U4 of the second polarization channel input differential signals, which are transmitted to the high-frequency patch resonator 5 through the feeding network, exciting the TM on the high-frequency patch resonator 5. 11 mode, and the signal will also be coupled to the low-frequency patch resonator 6, exciting the TM of the low-frequency patch resonator 6 11 It should be noted that differential signaling is a signal transmission method in which the signals on the two signal lines are in opposite phases and equal in magnitude. This method helps to reduce the high-order modes of the high-frequency patch resonator 5 and the low-frequency patch resonator 6, suppress the generation of harmonics, and improve the signal's anti-interference ability and transmission quality.

[0092] When the first polarization channel or the second polarization channel is used alone, the output obtained is dual-band electromagnetic radiation, which corresponds to the resonant frequencies of the high-frequency patch resonator 5 and the low-frequency patch resonator 6 respectively; when the first polarization channel and the second polarization channel are used simultaneously, the output obtained is dual-band dual-polarized electromagnetic radiation. At the same time, the feeding points and paths of the two polarization channels are physically separated, the electromagnetic waves of the two polarization channels are orthogonal in space, and the two polarization channels are independent of each other, reducing mutual interference.

[0093] In an embodiment of the present application, two output ends of the first T-type power divider, two output ends of the second T-type power divider, two output ends of the third T-type power divider, and two output ends of the fourth T-type power divider are respectively arranged in one-to-one correspondence with the two through holes of each through hole group.

[0094] The differential signal of the first port U1 and the second port U2 is transmitted through the output terminals 41 and 42 of T1 to the through hole group (7g, 7i) arranged one-to-one with the output terminals 41 and 42 of T1 on the third dielectric substrate layer 4, and is transmitted through the output terminals 45 and 46 of T3 to the through hole group (8g, 8i) arranged one-to-one with the output terminals 45 and 46 of T3 on the third dielectric substrate layer 4, and then the differential signal is transmitted to the high-frequency patch resonator 5 through the through hole group. The differential signal of the third port U3 and the fourth port U4 is transmitted through the output terminals 43 and 44 of T2 to the through hole group (9g, 9i) arranged one-to-one with the output terminals 43 and 44 of T2 on the third dielectric substrate layer 4, and is transmitted through the output terminals 47 and 48 of T4 to the through hole group (10g, 10i) arranged one-to-one with the output terminals 47 and 48 of T4 on the third dielectric substrate layer 4, and then the differential signal is transmitted to the high-frequency patch resonator 5 through the through hole group.

[0095] Figure 4 The S parameters and gain diagram of the antenna provided by the present invention vary with frequency. Figure 4 As shown,

[0096] S11 represents the reflection coefficient of the input port, that is, the reflection of the input signal at the first port U1. The smaller the value of S11, the better the matching of the antenna and the less reflection. Usually, S11 less than -10dB indicates good matching.

[0097] S31 represents the transmission coefficient from the third port U3 to the first port U1, and the value of S31 is used to evaluate the signal transmission characteristics between the first port U1 and the third port U3; S41 represents the transmission coefficient from the input signal of the first port U1 to the output signal of the fourth port U4, and the value of S41 is used to evaluate the signal transmission characteristics between the first port U1 and the fourth port U4; S32 represents the transmission coefficient from the input signal of the second port U2 to the output signal of the third port U3, and the value of S32 is used to evaluate the signal transmission characteristics between the second port U2 and the third port U3. It should be noted that the transmission coefficient can be used to evaluate the isolation between different ports, and then determine the degree of influence of the signal of one port on another port.

[0098] Gain is a parameter that measures the ability of an antenna to radiate or receive signals in a specific direction. Gain is usually expressed in dBi, which is represented by Gain. The higher the gain, the stronger the antenna's ability to radiate or receive signals in that direction.

[0099] like Figure 4As shown, the center frequency of the working frequency band of the low-frequency patch resonator 6 in this embodiment is 3.5GHz, and the center frequency of the working frequency band of the high-frequency patch resonator 5 is 4.8GHz. When the center frequency is 3.5GHz, the reflection coefficient -10dB bandwidth is 0.86%, and the bandwidth range is 3.48GHz-3.51GHz. The antenna has good matching characteristics, can effectively receive and transmit signals, and reduce reflection losses; the isolation between polarization channels is less than -20dB, and the maximum gain is 6.46dBi in the 3.5GHz frequency band. The antenna has good matching characteristics, can effectively receive and transmit signals, and can effectively receive and transmit signals, and can effectively reduce reflection losses. The antenna has good matching characteristics, ... reduce reflection losses, and can effectively reduce reflection losses. The antenna has good matching characteristics, can effectively reduce reflection losses, and can effectively reduce reflection losses. The antenna has good matching characteristics, can effectively reduce reflection losses, and can effectively reduce reflection losses. The antenna has good matching characteristics, can effectively reduce reflection losses, and can effectively reduce reflection losses. The antenna has good matching characteristics, can effectively reduce reflection losses, and can effectively reduce reflection losses. The antenna has good matching characteristics, can effectively reduce reflection losses, and can effectively reduce reflection losses. The antenna has good matching characteristics, can effectively reduce reflection losses, and can effectively reduce reflection losses. The antenna has good matching characteristics, can effectively reduce reflection losses, and 11 working mode, other parasitic modes are effectively suppressed, and it has good harmonic suppression function.

[0100] When the center frequency is 4.8GHz, the reflection coefficient -10dB bandwidth is 2.5%, and the bandwidth range is 4.74GHz-4.86GHz. The antenna has good matching characteristics, can effectively receive and transmit signals, and reduce reflection loss; the isolation between polarization channels is less than -15dB, and the maximum gain is 7.43dBi in the 4.8GHz frequency band. The antenna has good matching characteristics, can effectively receive and transmit signals, and can effectively reduce reflection loss. 11 working mode, other parasitic modes are effectively suppressed, and it has good harmonic suppression function.

[0101] Figure 5 This is a simulation diagram of the radiation direction of the dual-polarization dual-frequency base station antenna provided by the present invention.

[0102] Principal Polarization refers to the polarization direction of the electromagnetic waves that the antenna mainly radiates or receives in the design direction. For linearly polarized antennas, the principal polarization can be horizontal polarization or vertical polarization; for circularly polarized antennas, the principal polarization can be right-hand circular polarization (RHCP) or left-hand circular polarization (LHCP). The principal polarization direction is the main working direction of the antenna design, and the antenna has the strongest radiation or reception capability in this direction.

[0103] Cross polarization refers to the polarization direction that is orthogonal to the main polarization direction. For the main polarization of horizontal polarization, cross polarization is vertical polarization; for the main polarization of right-hand circular polarization, cross polarization is left-hand circular polarization. The cross polarization level indicates the antenna's radiation or reception capability in the cross polarization direction. A low cross polarization level (usually below -30dB) indicates that the antenna has good polarization purity, reducing interference and loss in the polarization direction.

[0104] like Figure 5As shown, in the 3.5 GHz band and the 4.8 GHz band, the maximum radiation direction of the antenna remains consistent in the first polarization channel in the two frequency bands. The antenna has similar radiation characteristics in the two frequency bands, and the signal coverage range and directivity are consistent, which is suitable for multi-band communication applications; the cross-polarization level is lower than -30 dB, the radiation intensity of the antenna in the cross-polarization direction is very low, and the polarization purity is high, which reduces interference and loss in the polarization direction and improves the communication quality and performance of the antenna.

Claims

1. A dual-polarization dual-frequency base station antenna, characterized in that: include: A high-frequency patch resonator, a first dielectric substrate layer, a low-frequency patch resonator, a second dielectric substrate layer, a common metal ground layer, a third dielectric substrate layer and a feed network layer are stacked in sequence from top to bottom; Four through hole groups are provided on the first dielectric substrate layer, the second dielectric substrate layer and the third dielectric substrate layer in the vertical direction, and the four through hole groups are symmetrically arranged relative to the target axis of the dual-polarization dual-frequency base station antenna, and the angles formed by the two through holes on each through hole group and the target axis are the same, and the feeder on the feed network layer is electrically connected to the low-frequency patch resonator and the high-frequency patch resonator in sequence through the through holes; The feed network layer is provided with a first T-type power divider, a second T-type power divider, a third T-type power divider and a fourth T-type power divider, wherein: The first T-type power divider, the second T-type power divider, the third T-type power divider and the fourth T-type power divider are symmetrically distributed in sequence on a vertical bisector of the third dielectric substrate layer in a clockwise direction relative to the center of the third dielectric substrate layer, wherein the first T-type power divider and the third T-type power divider constitute a first polarization channel, and the second T-type power divider and the fourth T-type power divider constitute a second polarization channel; The input port of the first T-type power divider and the input port of the third T-type power divider are used to input differential signals, and the input port of the second T-type power divider and the input port of the fourth T-type power divider are used to input differential signals; The two output ends of the first T-type power divider, the two output ends of the second T-type power divider, the two output ends of the third T-type power divider, and the two output ends of the fourth T-type power divider are respectively arranged in one-to-one correspondence with the two through holes of each through hole group; The target axis is an axis connected by the center of the high-frequency patch resonator, the center of the first dielectric substrate layer, the center of the low-frequency patch resonator, the center of the second dielectric substrate layer, the center of the common metal ground layer, the center of the third dielectric substrate layer and the center of the feeding network layer. The target axis is perpendicular to the high-frequency patch resonator, the first dielectric substrate layer, the low-frequency patch resonator, the second dielectric substrate layer, the common metal ground layer, the third dielectric substrate layer and the feeding network layer.

2. The dual-polarization dual-frequency base station antenna according to claim 1, characterized in that: The first dielectric substrate layer, the second dielectric substrate layer, the common metal ground layer, and the third dielectric substrate layer have the same size and shape; The sizes of the high-frequency patch resonator and the low-frequency patch resonator are both smaller than the size of the first dielectric substrate layer, and the size of the high-frequency patch resonator is smaller than the size of the low-frequency patch resonator.

3. The dual-polarization dual-frequency base station antenna according to claim 1, characterized in that: A circular etched area aligned with the through hole is etched on the low-frequency patch resonator, and the diameter of the circular etched area is greater than the diameter of the through hole.

4. The dual-polarization dual-frequency base station antenna according to claim 3, characterized in that: The numerical ratio between the diameter of the circular etched area on the low-frequency patch resonator and the diameter of the through hole is (3-3.5):

1.

5. The dual-polarization dual-frequency base station antenna according to claim 3, characterized in that: A circular etching area aligned with the through hole is etched on the common metal layer, and the diameter of the circular etching area is larger than the diameter of the through hole.

6. The dual-polarization dual-frequency base station antenna according to claim 5, characterized in that: The diameter of the circular etched area on the common metal layer is the same as the diameter of the circular etched area on the low frequency patch resonator.

7. The dual-polarization dual-frequency base station antenna according to claim 1, characterized in that: The diameter of the through hole on the first dielectric substrate layer, the diameter of the through hole on the second dielectric substrate layer, and the diameter of the through hole on the third dielectric substrate layer are all the same.

8. The dual-polarization dual-frequency base station antenna according to claim 1, characterized in that: The shortest distance between the edge of the high-frequency patch resonator and the edge of the first dielectric substrate layer is greater than a first target distance, and the first target distance satisfies: Wherein, L1 is the first target distance; λ1 is the wavelength of the electromagnetic wave in free space; n1 is the relative dielectric constant of the first dielectric substrate layer; c is the speed of light; f1 is the resonant frequency of the high-frequency patch resonator; The shortest distance between the edge of the low-frequency patch resonator and the second dielectric substrate layer is greater than a second target distance, and the second target distance satisfies: Wherein, L2 is the second target distance; λ2 is the wavelength of the electromagnetic wave in free space; n2 is the relative dielectric constant of the second dielectric substrate layer; c is the speed of light; and f2 is the resonant frequency of the low-frequency patch resonator.

9. The dual-polarization dual-frequency base station antenna according to claim 1, characterized in that: The angle formed by the two through holes in each through hole group and the target axis is 58°~62°.

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