Detection method, system, terminal device, and storage medium

Abstract

A detection method, system, terminal device and storage medium, the detection method comprising: illuminating a first surface of a test piece; obtaining a first image of the first surface, a second image of a second surface and a third signal of a side surface; the first surface and the second surface being two opposite surfaces; the third signal being a light signal generated by scattered light reflected by the side surface of the test piece; and detecting a to-be-detected feature of an edge of the test piece according to the first image, the second image and the third signal. The application can not only detect large-size defects of the side surface of the test piece, but also further detect whether small-size defects exist on the side surface, thereby reducing the risk of subsequent manufacturing links.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of automatic detection, in particular to a detection method, a detection system, a terminal device and a storage medium. BACKGROUND

[0002] In the technical field of detection, the edge of the detection area (generally the front and back) of the to-be-detected member (such as a wafer, a panel, a glass, and the like) is detected for defects, for example, edge collapse detection, which generally uses a surface array detector to continuously capture images, and then splices multiple sub-images to obtain an image of the entire area of the detection area.

[0003] The conventional detection method of a wafer can be front detection, back detection, or simultaneous front and back detection. Taking simultaneous front and back detection as an example, some small-size edge collapse or cracks on the side cannot be detected by the front and back detectors.

[0004] The undetected small-size defects on the side affect subsequent manufacturing processes. SUMMARY

[0005] The present application mainly solves the technical problem of missing detection of small-size defects on the side by conventional front detection or back detection.

[0006] According to a first aspect, in an embodiment, a detection method is provided, comprising:

[0007] Illuminating a first surface of a to-be-detected member;

[0008] Obtaining a first image of the first surface, a second image of a second surface, and a third signal of a side; the first surface and the second surface are two opposite surfaces; the third signal is a light signal generated by scattered light reflected by the side of the to-be-detected member;

[0009] Detecting a to-be-detected feature of the edge of the to-be-detected member according to the first image, the second image, and the third signal.

[0010] According to a second aspect, in an embodiment, a detection system is provided, comprising a detection subsystem, a detection light source, a motion mechanism, and a processing module;

[0011] The detection light source is configured to illuminate the first surface of the to-be-detected member;

[0012] The motion mechanism is configured to drive relative motion between the to-be-detected member and the detection subsystem, so that all to-be-detected areas of the to-be-detected member are traversed by the detection subsystem;

[0013] The detection subsystem comprises a first detector, a second detector, and a third detector;

[0014] The first detector is configured to capture a first image of the first surface;

[0015] The second detector is configured to collect a second image of a second surface of the workpiece, the first surface and the second surface being opposite surfaces;

[0016] The third detector is configured to collect scattered light reflected by the side surface of the workpiece from the light source, and output a third signal;

[0017] The processing module is configured to acquire the first image, the second image and the third signal; detect first to-be-measured feature information of the first surface according to the first image; detect second to-be-measured feature information of the second surface according to the second image; detect third to-be-measured feature information of the side surface of the workpiece according to the third signal; and detect an edge of the workpiece according to the first to-be-measured feature information, the second to-be-measured feature information and the third to-be-measured feature information.

[0018] According to a third aspect, a terminal device is provided in an embodiment, comprising:

[0019] a memory for storing a program;

[0020] a processor for executing the program stored in the memory to implement the method described in the first aspect.

[0021] According to a fourth aspect, a computer readable storage medium is provided in an embodiment, the medium storing a program, the program being executable by a processor to implement the measurement method described in the first aspect.

[0022] According to the detection method, system, terminal device and storage medium provided in the above embodiments, the third detector is arranged on the side surface of the workpiece to acquire scattered light information of the side surface, and the first image and the second image obtained by front and back detection are combined, so that not only large-size defects can be detected, but also small-size defects on the side surface can be further detected, and the risk in a subsequent manufacturing link is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 a structural schematic diagram of a detection system provided in an embodiment of the present application (one);

[0024] Figure 2 a structural schematic diagram of a detection system provided in an embodiment of the present application (two);

[0025] Figure 3 a flowchart of a detection method provided in an embodiment of the present application;

[0026] Figure 4 a schematic diagram of a to-be-measured region and a detection position provided in an embodiment of the present application;

[0027] Figure 5A schematic diagram of a first image and a second image provided by an embodiment of the present application;

[0028] Figure 6 A schematic diagram of a third signal provided by an embodiment of the present application.

[0029] Fig. 1 is a schematic diagram of a first detector; Fig. 2 is a schematic diagram of a second detector; Fig. 3 is a schematic diagram of a third detector; Fig. 4 is a schematic diagram of a light source; Fig. 5 is a schematic diagram of a workpiece; Fig. 6 is a schematic diagram of a moving mechanism; Fig. 7 is a schematic diagram of a processing module. DETAILED DESCRIPTION

[0030] The application will be further described below in conjunction with specific embodiments and the accompanying drawings. Like reference numerals in different embodiments designate similar elements. In the following embodiments, many details are described in order to provide a more thorough understanding of the present application. However, it will be apparent to one skilled in the art that some features, which are not described in detail, can be omitted, or replaced by other elements, materials, methods, etc. In some cases, some operations related to the present application are not shown or described in the specification in order to avoid the core of the present application being overwhelmed by too many descriptions, and it is not necessary for one skilled in the art to describe these related operations in detail according to the description in the specification and general technical knowledge in the art.

[0031] In addition, the features, operations or characteristics described in the specification can be combined in any appropriate manner to form various embodiments. Meanwhile, the steps or actions in the method description can also be sequentially adjusted or adjusted in a manner that is apparent to one skilled in the art. Therefore, the order in the specification and the drawings is only for the purpose of clearly describing a certain embodiment, and does not mean that it is the necessary order, unless otherwise stated that a certain order must be followed.

[0032] The serial numbers of the components in this paper, such as "first", "second", etc., are only used to distinguish the described objects, and do not have any order or technical meaning. Unless otherwise specified, "connection" and "coupling" in this paper include direct and indirect connections (couplings).

[0033] For example, the workpiece is a wafer, and the workpiece has multiple surface areas to be tested, such as the front surface, the back surface, and the edge side surface, which need to be detected for defects. The detection standards and detection methods of different areas to be tested correspond to different areas to be tested. For example, the types of defects to be detected in the center area and the edge area of the front surface of the wafer are different. In the present application, the areas to be tested of the wafer can include the front surface, the back surface, and the side surface adjacent to the edge.

[0034] In wafer foundry and FAB factory, improper use of equipment or transportation problems cause the edge (the junction of the front and side, the junction of the back and side or the side itself) of the wafer to appear to be broken or cracked, which affects the next manufacturing process, so it is necessary to detect the wafer edge breakage. In order to improve the detection efficiency, the relative motion of the wafer to be detected relative to the image detector is continuously acquired to realize the complete scanning of the detection area, and then the edge breakage detection is carried out, and the approximate size of the edge breakage defect is calculated. When a large size edge breakage defect occurs, it can be observed on the front or back of the wafer, or it can also be observed from the side. However, when a small size edge breakage or crack occurs on the side, the detector for detecting the front and back cannot effectively detect it, especially the detector on the back (because of front illumination, the image collected by the back detector is a dark field image).

[0035] In order to realize the detection of small size edge breakage or crack, the edge breakage or crack is collectively referred to as defect, that is, the feature to be detected, and the applicant finds that on the basis of introducing a third detector for detecting scattered light, the scattered light reflected on the side can be collected by front illumination of the wafer, and the edge breakage or crack on the side can be detected by analyzing the light signal of the scattered light. Not only large size defects can be detected, but also small size defects can be detected.

[0036] As shown in Figure 1 With Figure 2 The detection system provided by the embodiment of the present application can include a detection subsystem, a detection light source 4, a motion mechanism 6 and a processing module 7.

[0037] The detection light source 4 is configured to illuminate the first surface (such as the front surface of the wafer) of the wafer to be detected 5. In some embodiments, the detection light source 4 can be a coaxial light source as the first detector 1, and is set as a surface light source or a line light source according to whether the first detector 1 is a surface array detector or a line array detector. The selection of the light source can be incoherent high-brightness white light or other monochromatic light (which needs to correspond to the spectral response range of the camera), or a coherent light source formed into a line light spot. The coaxial light source provides more uniform illumination than the traditional light source, and at the same time avoids the reflection of the object to improve the accuracy of the collected image.

[0038] The motion mechanism 6 is configured to drive the relative motion between the test piece 5 and the detection subsystem, so that all the test regions of the test piece 5 are traversed by the detection subsystem. In some embodiments, the test piece 5 is a wafer, and the motion mechanism 6 corresponds to a wafer carrier device matching the wafer. The wafer carrier device can drive the wafer to rotate along the center of the wafer, and drive the wafer to move relative to the detection subsystem, so that the edge of the wafer is traversed by the detector of the detection subsystem, and multiple images are obtained by shooting. The detection subsystem can include a first detector 1, a second detector 2, and a third detector 3. In some embodiments, the first detector 1 and the second detector 2 can be coaxially arranged opposite to each other, and the third detector 3 is perpendicular to the first detector 1.

[0039] The first detector 1 is configured to acquire a first image of a first surface (such as the upper surface in Figure 1 ). In some embodiments, the first surface can be the front surface of the wafer, and the first image corresponds to the bright field image of the front surface of the edge region of the wafer.

[0040] The second detector 2 is configured to acquire a second image of a second surface (such as the lower surface in Figure 1 ) of the test piece 5, and the first surface and the second surface are two opposite surfaces. In some embodiments, the second surface can be the back surface of the wafer, and the second image corresponds to the dark field image of the back surface of the edge region of the wafer.

[0041] The third detector 3 is configured to acquire the scattered light reflected by the side surface of the test piece 5 of the detection light source 4, and output a third signal. According to the type of the detector used by the third detector 3, the third signal can be a light intensity signal or an image signal. For example, the third detector 3 can be a point detector, such as a photodiode, a photomultiplier tube (PMT), etc. When the scattered light irradiates on the point detector, an electrical signal is generated, and the amplitude of the electrical signal is proportional to the intensity of the scattered light. By measuring the light intensity signal of the scattered light through the point detector, quantitative information of the scattered light can be obtained. When the detection light source 4 irradiates on the first surface, the scattered light of the edge can be detected by the third detector 3, and when the defect irradiates on the side surface, the light intensity signal will change. According to the change of the light intensity and the corresponding angle range, the size of the defect can be calculated. On the other hand, a short-focus detector can concentrate light, so that the detector can more finely distinguish the scattered light signals at different positions, thereby obtaining higher spatial resolution. In addition, using a short-focus detector can also expand the depth range of imaging, so that the imaging result is clearer. Therefore, using a short-focus detector to detect small-size defects is also a realizable way.

[0042] The processing module 7 is configured to acquire the first image, the second image and the third signal; detect first to-be-measured characteristic information of the first surface according to the first image; detect second to-be-measured characteristic information of the second surface according to the second image; detect third to-be-measured characteristic information of the side surface of the to-be-measured piece 5 according to the third signal; and detect an edge of the to-be-measured piece 5 according to the first to-be-measured characteristic information, the second to-be-measured characteristic information and the third to-be-measured characteristic information.

[0043] According to different implementation manners of the third detector 3, the form of the third signal is different, and therefore the processing performed by the processing module 7 is also different, which will be described in detail below.

[0044] In some embodiments, the third detector 3 can be a point detector, and the third signal can be a corresponding light intensity signal of scattered light. The processing module 7 acquires a single duration of light intensity change greater than a preset threshold in the third signal, calculates the size of the to-be-measured characteristic according to the single duration, determines that the third to-be-measured characteristic information is detected at the corresponding position of the side surface, classifies the to-be-measured characteristic at the current detection position as a fourth type of to-be-measured characteristic, and records the size of the to-be-measured characteristic at the current detection position.

[0045] In some embodiments, the third detector 3 can be a short-focus detector, and the third signal can correspond to a third image of the side surface of the to-be-measured piece 5. The processing module 7 acquires the third image, performs image recognition on the third image to obtain the third to-be-measured characteristic information, calculates the size of the to-be-measured characteristic according to the third image according to the third to-be-measured characteristic information, determines that the third to-be-measured characteristic information is detected at the corresponding position of the side surface, classifies the to-be-measured characteristic at the current detection position as a fourth type of to-be-measured characteristic, and records the size of the to-be-measured characteristic at the current detection position.

[0046] In some embodiments, when the to-be-measured piece 5 moves at a high speed relative to the detection subsystem, the image acquired by the area array detector can have a trailing problem. The applicant has found that, under the existing continuous light source, the image acquired by the area array detector has a blurring phenomenon, that is, there is an image trailing problem. In this case, the boundary of defects such as edge collapse is difficult to obtain a clear boundary, which affects the accuracy of detecting the edge collapse.

[0047] The applicant found that this is due to the use of an area array detector and long time illumination of a continuous light source, resulting in too long exposure time of the detector, the measured object 5 is in a high-speed motion state, and the photographed picture will have the above-mentioned trailing problem. The applicant changes the form of the detector, the first detector 1 and the second detector 2 are both linear array detectors and coaxially arranged; the probe light source 4 provides linear illumination to form a linear light spot on the measured object 5. For example, when the measured object 5 is a wafer, the length direction of the linear light spot is parallel to the radial direction of the wafer, and the length direction of the imaging area of the first detector 1 and the second detector 2 is parallel to the radial direction of the wafer. At this time, the influence of high-speed motion is reduced, and the trailing problem is reduced. Although the image output by the linear array camera is also a two-dimensional image, the aspect ratio is very large, which can meet the high-precision detection.

[0048] The specific process of the detection method of the detection system will be described below, as shown in Figure 3 , the detection method comprises the following steps:

[0049] Step 1, illuminating the first surface of the measured object 5.

[0050] For example, as shown in Figure 1 , when the measured object 5 is a wafer, the probe light source 4 can be arranged on the top surface of the wafer, such as a white light source, and the center of the probe light source 4 is aligned with the edge of the wafer. In some embodiments, the probe light source 4 can be a coaxial light source of the first detector 1, so the center of the imaging area of the first detector 1 is also aligned with the edge of the measured object 5 (as shown in Figure 4 (B)).

[0051] Step 2, obtaining a first image of the first surface, a second image of the second surface, and a third signal of the side surface; the first surface and the second surface are two opposite surfaces; the third signal is a light signal generated by the scattered light reflected by the side surface of the measured object 5.

[0052] For example, when the measured object 5 is a wafer, the image of the first surface (front surface) is obtained by the first detector 1, the image of the second surface (back surface) is obtained by the second detector 2, and the scattered light reflected by the side surface is obtained by the third detector 3.

[0053] Step 3, detecting the measured feature of the edge of the measured object 5 according to the first image, the second image and the third signal.

[0054] For example, as shown in Figure 4As shown in (A), during the wafer's rotation, the first detector 1, the second detector 2, and the third detector 3 can all perform detection at the same detection position at any given time. It should be noted that the current detection position is relative to the edge of the device under test 5, and each detection position is equidistant from the wafer center. When the device under test 5 is circular, the current detection position can be determined by angle. Figure 4 As shown in (B) in the middle, corresponding to Figure 4 The detection position pointed to by arrow (A) corresponds to the center of the imaging area of ​​either the first detector 1 or the second detector 2. For example... Figure 4 As shown in (B), since the edge defects are caused by external factors, the defects have a maximum size. The area between the dashed circle and the edge is the area to be tested for edge defect detection. As long as the length direction (left and right direction in the figure) of the imaging area of ​​the first detector 1 (for example) can cover the width of the ring.

[0055] In some embodiments, step 3 above may include:

[0056] Step 301: Perform image recognition on the first image to obtain the first feature information to be tested on the first surface. For example, such as... Figure 5 As shown in (A), after acquiring the first image, taking a bright-field image as an example, the regions other than the test piece 5 in the first image can be removed through semantic segmentation and other methods, retaining the image of the test piece 5. The connected component pixels are calculated using the binarized image. When the number of black pixels in an image exceeds a preset threshold, it is determined to be a defect, and the center position and size of the defect are output. The size can be calculated using pixel count, cell size, and other conditions. This defect-related information can be defined as the first test feature information.

[0057] Step 302: Perform image recognition on the second image to obtain the second feature information to be tested on the second surface. For example, such as... Figure 5 As shown in (B), after acquiring the second image, taking a dark-field image as an example, the regions other than the test piece 5 in the second image can be removed through semantic segmentation and other methods, retaining the image of the test piece 5. The connected component pixels are calculated using the binarized image. When the number of white pixels in an image exceeds a preset threshold, it is judged as a defect, and the center position and size of the defect are output. The size can be calculated using pixel count, cell size, and other conditions. This defect-related information can be defined as the second test feature information.

[0058] Step 303: Obtain the third feature information on the side based on the third signal. For example, taking the third detector 3 as a point detector as an example, such as... Figure 6As shown, when the defect located at the side is rotated to the detection range of the third detector 3, the light intensity of the scattered light reflected by the defect will change suddenly due to the difference between the reflection of the edge of the defect and the reflection of the intact edge. By obtaining the change rate of the light intensity, it can be determined whether there is a defect at the current detection position. The approximate size of the defect can be calculated according to the size of the intensity difference, the width of the intensity difference and the Rayleigh scattering formula, which is convenient for subsequent judgment of the risk of continuing to scan the wafer.

[0059] Step 304, detecting the edge of the measured feature of the measured piece 5 according to the first measured feature information, the second measured feature information and the third measured feature information. As shown in (A) of Figure 4 As shown in (A), the edge collapse or crack can occur at the first surface, the second surface or the side of the measured piece 5. In different cases, the first measured feature information, the second measured feature information and the third measured feature information detected at the same detection position are not the same.

[0060] According to the position and size of the defect, the measured features (corresponding to defects) in the measured area (corresponding to the edge of the wafer) of the measured piece 5 are classified into four categories, i.e. the first measured feature, the second measured feature, the third measured feature and the fourth measured feature; wherein the first measured feature corresponds to the large-size defect of the wafer side, the second measured feature is the defect of the front surface of the wafer, the third is the defect of the back surface of the wafer, and the fourth is the small-size defect of the wafer side.

[0061] If the first measured feature information and the second measured feature information are detected at the current detection position, and the third measured feature information is detected at the corresponding position of the side, the measured feature at the current detection position is classified as the first measured feature. The first measured feature is a large-size defect on the side of the measured piece 5. In the case of large defect size, it can be detected on the front surface, the back surface and the side. Therefore, when the first measured feature information, the second measured feature information and the third measured feature information are detected at the same detection position, it can be determined that the defect at the current detection position is a large-size defect located at the side.

[0062] If only the first measured feature information is detected at the current detection position, the measured feature at the current detection position is classified as the second measured feature. The second measured feature is a defect located at the front surface. At this time, the second detector 2 on the back surface and the third detector 3 on the side cannot be detected. Therefore, when only the first measured feature information is detected at a detection position, it can be determined that the defect at the current detection position is a defect located at the first surface (front surface), specifically the edge of the intersection between the front surface and the side.

[0063] If only the second feature information is detected at the current detection position, the feature at the current detection position is classified as a third type of feature. The third type of feature is a defect on the back surface, and the first detector 1 on the front surface and the third detector 3 on the side surface cannot detect the defect. Therefore, when only the second feature information is detected at a detection position, it can be determined that the current defect is a defect on the second surface (the back surface), and the defect is specifically an edge at the intersection of the back surface and the side surface.

[0064] If only the third feature information is detected at the side surface corresponding position at the current detection position, or the first feature information is detected at the current detection position and the third feature information is detected at the side surface corresponding position, the feature at the current detection position is classified as a fourth type of feature. The fourth type of feature is a small-size defect on the side surface of the workpiece 5, which is the focus of detection in the embodiment of the application. It can be seen that the detection method and system provided by the embodiment of the application can not only realize the normal front detection or back detection of the edge of the workpiece 5, but also can detect the large-size defect or even the small-size defect on the side surface.

[0065] In some embodiments, the third signal can be a corresponding light intensity signal of the scattered light; and the step 304 can include:

[0066] First, the single-time duration in which the light intensity change in the third signal is greater than a preset threshold is obtained, and the size of the feature to be detected is calculated according to the single-time duration. As shown in the figure, the light intensity change per unit time or per unit angle of the third signal corresponding to the dashed box in the figure is much larger than that of the data on both sides. The part of the corresponding third signal can be used as the third feature information. Figure 6

[0067] Then, it is determined whether only the third feature information is detected at the side surface corresponding position at the current detection position, or the first feature information is detected at the current detection position and the third feature information is detected at the side surface corresponding position. The feature at the current detection position is classified as a fourth type of feature, and the size of the feature at the current detection position is recorded. When the light intensity signal is used as the third signal, the presence of a defect at the current detection position can be determined by obtaining the rate of change of the light intensity, and the approximate size of the defect can be calculated by the intensity difference, the width of the intensity difference, and the Rayleigh scattering formula, which facilitates subsequent judgment of the risk of continuing to scan the wafer.

[0068] In some embodiments, the third signal can be a third image corresponding to the side surface of the workpiece 5; and the step 304 can include:

[0069] ​Firstly, image recognition is performed on the third image to obtain third to-be-measured feature information, and the size of the to-be-measured feature is calculated according to the third image according to the third to-be-measured feature information. At this time, the third detector 3 can adopt a short-focus detector, and the third signal is an image signal. After the third image is collected, the area outside the to-be-measured part 5 can be removed through semantic segmentation processing and the like, and the image of the to-be-measured part 5 is retained, and the connected domain pixel points are calculated through the binary image. When the number of black region pixel points in an image is greater than a preset threshold, it is judged that there is a defect, and the center position and size of the defect are output. The size can be calculated through pixel points, pixel element size and the like.

[0070] Then, it is determined that only third to-be-measured feature information is detected on the position corresponding to the side surface at the current detection position, or first to-be-measured feature information is detected at the current detection position and third to-be-measured feature information is detected at the position corresponding to the side surface, and the to-be-measured feature at the current detection position is classified as a fourth type of to-be-measured feature, and the size of the to-be-measured feature at the current detection position is recorded.

[0071] In some embodiments, after the to-be-measured feature at the current detection position is classified as a fourth type of to-be-measured feature in step 304, the method can further include:

[0072] In step 305, the relative movement position of the to-be-measured part 5 at the current detection position is obtained, and the position of the current to-be-measured feature on the to-be-measured part 5 is obtained according to the movement position and the preset initial position and recorded.

[0073] In step 305, the relative movement position of the to-be-measured part 5 at the current detection position is obtained, and the position of the current to-be-measured feature on the to-be-measured part 5 is obtained according to the movement position and the preset initial position and recorded.

[0074] The rotation time length of the to-be-measured part 5 when the to-be-measured part 5 moves to the current detection position is obtained.

[0075] The rotation angular velocity of the to-be-measured part 5 is obtained, and the relative movement position of the to-be-measured part 5 is calculated according to the radius of the to-be-measured part 5, the preset initial position, the rotation time length and the rotation angular velocity.

[0076] For example, the to-be-measured part 5 can be a circular to-be-measured part, such as a wafer, which is driven to rotate relative to the detection subsystem by the movement mechanism 6 so that the edge of the to-be-measured part 5 is traversed by the detection subsystem. After the wafer is driven to rotate, the angular change amount of the current detection position relative to the starting position can be obtained according to the rotation angular velocity and the rotation time, that is, the angle of the current detection position is obtained.

[0077] In summary, the detection method and the detection system provided by the embodiments of the present application can realize defect detection on the edge region of the to-be-detected piece 5, and can detect defects on the front surface, the back surface, and large-size defects and small-size defects on the side surface. In addition, the front surface, the back surface, and the side surface corresponding to one detection position can be simultaneously detected by using three detectors, and the type of the current to-be-detected defect can be comprehensively judged by combining three to-be-detected feature information.

[0078] In combination with the actual application of the to-be-detected piece 5, the position information and the size information of the defect can be output, for example, when the to-be-detected piece 5 is a wafer, an initial position / initial angle can be limited, the angle of the current detection position can be obtained, the position corresponding to the defect can be obtained, and the position corresponding to the defect can be recorded.

[0079] On the other hand, the detection system in the embodiments of the present application uses a linear array detector for the first detector 1 and the second detector 2, which can solve the ghosting problem caused by high-speed movement of the to-be-detected piece 5 and improve the detection accuracy.

[0080] The detection method provided by the present application is realized by a terminal device, and the terminal device can include a memory and a processor. For example, the terminal device can be a computer, a server, or other devices with computing and data processing capabilities.

[0081] The memory is configured to store a program. The processor is configured to realize the detection method described in the above embodiments by executing the program stored in the memory.

[0082] Those skilled in the art can understand that all or part of the functions of the various methods in the above embodiments can be realized by hardware or by a computer program. When all or part of the functions in the above embodiments are realized by a computer program, the program can be stored in a computer-readable storage medium, which can include a read-only memory, a random access memory, a magnetic disk, an optical disk, a hard disk, etc. The above functions are realized by executing the program by a computer. For example, the program is stored in the memory of the device, and when the program in the memory is executed by the processor, the above functions are realized. In addition, when all or part of the functions in the above embodiments are realized by a computer program, the program can also be stored in a server, another computer, a disk, an optical disk, a flash disk, or a storage medium such as a mobile hard disk, and is downloaded or copied into the memory of the local device, or the system of the local device is updated, and when the program in the memory is executed by the processor, the above functions are realized.

[0083] Various exemplary embodiments are described herein. However, those skilled in the art will recognize that changes and modifications can be made to the exemplary embodiments without departing from the scope of the present disclosure. For example, the various steps and components for carrying out the steps can be implemented differently (e.g., one or more steps can be deleted, modified, or combined with other steps) depending on the particular application or any number of cost functions associated with the operation of the system.

[0084] While the principles of the disclosure have been illustrated and described in various embodiments, many modifications to the illustrated examples as well as other examples can be practiced by those skilled in the art without departing from the principles and scope of the disclosure. Such modifications and other implementations are deemed to be within the scope of the disclosure.

[0085] The foregoing detailed description has been presented for purposes of illustrations and description. However, it is recognized that various modifications and changes can be made to the described embodiments without departing from the underlying principles of the disclosure. Accordingly, it is intended that the scope of the disclosure be limited only by the claims. Also, the advantages, other advantages, and solutions to problems have been described above with regard to various embodiments. However, the benefits, advantages, solutions to problems and any element(s) that can cause any of such should not be interpreted as being required. The terms "including" and variations thereof such as "comprise" as used herein are to be construed in an open, inclusive way, that is as "including, but not limited to." Also, the term "coupled" and variations thereof as used herein are intended to mean physically connected, electrically connected, magnetically connected, optically connected, communicatively connected, functionally connected, and / or any other connection.

[0086] Those skilled in the art will recognize that many modifications can be made to the details of the above-described embodiments without departing from the underlying principles of the present disclosure. The scope of the present disclosure should, therefore, be determined only by the following claims.

Claims

1. A method of detection, characterized in that, The method comprises the following steps: illuminating a first surface of a test piece; acquiring a first image of the first surface, a second image of a second surface, and a third signal of a side surface; the first surface and the second surface are two opposite surfaces; the third signal is a light signal generated by scattered light reflected by the side surface of the test piece; detecting a test feature of an edge of the test piece according to the first image, the second image, and the third signal; wherein the first image is subjected to image recognition to obtain first test feature information on the first surface; the second image is subjected to image recognition to obtain second test feature information on the second surface; the third signal is subjected to image recognition to obtain third test feature information on the side surface; detecting a test feature of an edge of the test piece according to the first test feature information, the second test feature information, and the third test feature information; wherein, if the first test feature information and the second test feature information are detected at a current detection position, and the third test feature information is detected at a corresponding position of the side surface, the test feature at the current detection position is classified as a first type of test feature; if only the first test feature information is detected at the current detection position, the test feature at the current detection position is classified as a second type of test feature; if only the second test feature information is detected at the current detection position, the test feature at the current detection position is classified as a third type of test feature; if only the third test feature information is detected at a corresponding position of the side surface at the current detection position, or if the first test feature information is detected at the current detection position and the third test feature information is detected at the corresponding position of the side surface, the test feature at the current detection position is classified as a fourth type of test feature.

2. The method of claim 1, wherein, The third signal is a corresponding light intensity signal of the scattered light; detecting a test feature of an edge of the test piece according to the first test feature information, the second test feature information, and the third test feature information comprises: acquiring a single duration of light intensity change greater than a preset threshold in the third signal, and calculating a size of the test feature according to the single duration; determining that only the third test feature information is detected at a corresponding position of the side surface at the current detection position, or that the first test feature information is detected at the current detection position and the third test feature information is detected at the corresponding position of the side surface, classifying the test feature at the current detection position as a fourth type of test feature, and recording the size of the test feature at the current detection position.

3. The method of claim 1, wherein, The third signal is a third image corresponding to the side surface of the test piece; detecting a test feature of an edge of the test piece according to the first test feature information, the second test feature information, and the third test feature information comprises: subjecting the third image to image recognition to obtain the third test feature information, and calculating a size of the test feature according to the third test feature information and the third image; determining that the third feature information is detected only at the position corresponding to the side at the current detection position, or that the first feature information is detected at the current detection position and the third feature information is detected at the position corresponding to the side, classifying the feature to be detected at the current detection position as a fourth type of feature to be detected, and recording the size of the feature to be detected at the current detection position.

4. The method of claim 1, wherein, After classifying the feature to be detected at the current detection position as the fourth type of feature to be detected, the method further comprises: obtaining a relative motion position of the workpiece at the current detection position, and obtaining and recording the position of the feature to be detected at the workpiece according to the motion position and a preset initial position.

5. The method of claim 4, wherein, The workpiece is a circular workpiece driven to rotate relative to the detection subsystem by the motion mechanism, so that the edge of the workpiece is traversed by the detection subsystem. The method comprises: obtaining the rotation duration of the workpiece when the workpiece moves to the current detection position; obtaining the angular velocity of the rotation of the workpiece, and calculating the relative motion position of the workpiece according to the radius of the workpiece, the preset initial position, the rotation duration, and the angular velocity of the rotation.

6. A detection system characterized by, The detection system comprises a detection subsystem, a detection light source, a motion mechanism, and a processing module. The detection light source is configured to illuminate the first surface of the workpiece. The motion mechanism is configured to drive relative motion between the workpiece and the detection subsystem, so that all the regions to be detected of the workpiece are traversed by the detection subsystem. The detection subsystem comprises a first detector, a second detector, and a third detector. The first detector is configured to acquire a first image of the first surface. The second detector is configured to acquire a second image of a second surface of the workpiece, the first surface and the second surface being two opposite surfaces. The third detector is configured to acquire scattered light reflected by the side of the workpiece from the detection light source, and output a third signal. The processing module is configured to obtain the first image, the second image, and the third signal. detecting first feature information of the first surface according to the first image; detecting second feature information of the second surface according to the second image; detecting third feature information of the side of the workpiece according to the third signal; and detecting features to be detected of the edge of the workpiece according to the first feature information, the second feature information, and the third feature information. The first image is subjected to image recognition to obtain the first feature information on the first surface. The second image is subjected to image recognition to obtain the second feature information on the second surface. The third signal is subjected to image recognition to obtain the third feature information on the side. The first feature information, the second feature information, and the third feature information are used to detect features to be detected of the edge of the workpiece. If the first to-be-detected feature information and the second to-be-detected feature information are detected at the current detection position, and the third to-be-detected feature information is detected at the side surface corresponding position, the to-be-detected feature at the current detection position is classified as a first type of to-be-detected feature; If only the first to-be-detected feature information is detected at the current detection position, the to-be-detected feature at the current detection position is classified as a second type of to-be-detected feature; If only the second to-be-detected feature information is detected at the current detection position, the to-be-detected feature at the current detection position is classified as a third type of to-be-detected feature; If only the third to-be-detected feature information is detected at the side surface corresponding position, or the first to-be-detected feature information is detected at the current detection position and the third to-be-detected feature information is detected at the side surface corresponding position, the to-be-detected feature at the current detection position is classified as a fourth type of to-be-detected feature.

7. The detection system of claim 6, wherein, The third detector is a point detector, and the third signal is a corresponding light intensity signal of the scattered light; the processing module acquires a single duration of a light intensity change greater than a preset threshold in the third signal, calculates the size of the to-be-detected feature according to the single duration, determines that the third to-be-detected feature information is detected at the side surface corresponding position, classifies the to-be-detected feature at the current detection position as a fourth type of to-be-detected feature, and records the size of the to-be-detected feature at the current detection position; Alternatively, The third detector is a short-focus detector, and the third signal is a third image of the side surface of the to-be-detected member; the processing module acquires the third image, performs image recognition on the third image to obtain the third to-be-detected feature information, calculates the size of the to-be-detected feature according to the third to-be-detected feature information and the third image; determines that the third to-be-detected feature information is detected at the side surface corresponding position, classifies the to-be-detected feature at the current detection position as a fourth type of to-be-detected feature, and records the size of the to-be-detected feature at the current detection position.

8. The detection system of claim 6, wherein, The first detector and the second detector are both linear array detectors and are coaxially arranged; the detection light source provides linear illumination to form a linear light spot on the to-be-detected member.

9. A terminal device, comprising: Comprise: a memory for storing a program; a processor for executing the program stored in the memory to implement the method of any one of claims 1-5.

10. A computer-readable storage medium, characterized in that, The medium has a program stored thereon, and the program can be executed by a processor to implement the method of any one of claims 1-5.

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