A DDR detection method, system and medium based on MTK chip

Abstract

The embodiment of the present application provides a DDR detection method, system and medium based on the MTK chip, the method comprising: obtaining MTK chip parameters, writing a storage program based on the MTK chip parameters, and generating set storage information; starting a DDR test program, detecting the set storage information based on the DDR test program, and generating a detection result; analyzing storage performance information of a storage space based on the detection result, and analyzing whether the storage performance information meets set condition information; if the set condition information is met, transmitting the detection result to a terminal in real time; if the set condition information is not met, analyzing abnormal information of the storage space, adjusting the writing of the storage program based on the abnormal information, and changing the set storage information; analyzing the storage performance of the storage space through the DDR test program, thereby dynamically adjusting the storage program according to the abnormality of the storage space, and improving the operation capability of the MTK chip.

Description

Technical Field

[0001] The present application relates to the field of DDR detection technology, and in particular to a DDR detection method, system and medium based on an MTK chip. Background Art

[0002] After the PCB blank board becomes a finished board through SMT patch and DIP plug-in, it is necessary to test various hardware indicators of the PCB before flashing the system software for shipment. DDR test is a very important one. Currently, manufacturers generally flash the system software and test the DDR after booting. This method requires the installation of DDR test software, which has the following disadvantages:

[0003] The detection speed is slow. Various DDR detection software running on the operating system must interact with DDR through the API provided by the operating system, which increases the detection time.

[0004] The detection range is small, and the operating system allows the application software to operate in a limited DDR range. For example, the memory space occupied by the operating system itself does not allow the DDR detection software to access it. For the above problems, effective technical solutions are urgently needed. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a DDR detection method, system and medium based on the MTK chip, which analyzes the storage performance of the storage space through a DDR test program, thereby dynamically adjusting the storage program according to the abnormality of the storage space and improving the operating ability of the MTK chip.

[0006] The embodiment of the present application also provides a DDR detection method based on an MTK chip, including:

[0007] Get MTK chip parameters, write storage program based on MTK chip parameters, and generate setting storage information;

[0008] Starting a DDR test program, testing the set storage information based on the DDR test program, and generating a test result;

[0009] Analyze the storage performance information of the storage space based on the detection result, and analyze whether the storage performance information meets the set condition information;

[0010] If the set condition information is met, the test results will be transmitted to the terminal in real time;

[0011] If the set condition information is not met, the abnormal information of the storage space is analyzed, and the write storage program is adjusted based on the abnormal information to change the set storage information.

[0012] Optionally, in the DDR detection method based on the MTK chip described in the embodiment of the present application, obtaining MTK chip parameters, writing a storage program based on the MTK chip parameters, and generating setting storage information specifically include:

[0013] Get MTK chip parameters, and select multiple storage programs based on the MTK chip parameters;

[0014] Set the write timing information, match the corresponding storage program based on the write timing information, and generate the write time node of each storage program;

[0015] Sequentially write multiple storage programs according to write timing information based on the write time node to obtain write status information;

[0016] The write time is adjusted in real time based on the write status information to generate setting storage information, and the write time is the time difference between two adjacent write time nodes.

[0017] Optionally, in the DDR detection method based on the MTK chip described in the embodiment of the present application, starting the DDR test program, detecting the set storage information based on the DDR test program, and generating the detection result specifically includes:

[0018] Select the matching DDR test program based on the MTK chip parameters, start the DDR test program, and generate test vectors and configuration information;

[0019] Acquire test signals at different time nodes, and generate test patterns based on the test signals at different time nodes;

[0020] Smoothing the test pattern to obtain an optimized test pattern;

[0021] Based on the optimized test graph, the matching degree between different time nodes and the set storage information is analyzed to obtain the test results.

[0022] Optionally, in the DDR detection method based on the MTK chip described in the embodiment of the present application, analyzing the storage performance information of the storage space based on the detection result specifically includes:

[0023] Real-time throughput and real-time throughput rate based on the storage space of the test results;

[0024] Compare the real-time throughput with the set throughput of the storage space to obtain the throughput difference;

[0025] Obtaining first storage performance information based on the throughput difference;

[0026] Compare the real-time throughput rate with the set throughput rate of the storage space to obtain a rate difference;

[0027] obtaining second storage performance information based on the rate difference;

[0028] A weighted calculation is performed based on the first storage performance information and the second storage performance information to generate final storage performance information.

[0029] Optionally, in the DDR detection method based on the MTK chip described in the embodiment of the present application, if the set condition information is not met, the abnormal information of the storage space is analyzed, and the write storage program is adjusted based on the abnormal information, and the set storage information is changed, which specifically includes:

[0030] If the set condition information is not met, the difference information between the storage performance information and the set condition information is analyzed;

[0031] Determine whether the difference information is within a set difference range;

[0032] If it is within the set difference range, first abnormal information is generated, and the write adjustment program is adjusted in a first manner based on the first abnormal information;

[0033] If it is not within the set difference range, the difference information is analyzed to be greater than the upper limit of the difference range or less than the lower limit of the difference range;

[0034] If the difference information is less than the lower limit of the difference interval, second abnormal information is generated, and the write adjustment program is adjusted in a second manner based on the second difference information;

[0035] If the difference information is greater than the upper limit value of the difference interval, third abnormal information is generated, and the write adjustment program is adjusted in a third manner based on the third abnormal information.

[0036] Optionally, in the DDR detection method based on the MTK chip described in the embodiment of the present application, if the set condition information is met, after the detection result is transmitted to the terminal in real time, it also includes:

[0037] Obtain the test results and analyze the yield rate of MTK chips based on the test results;

[0038] Determine whether the yield rate of the MTK chip reaches a set yield rate threshold;

[0039] If the set yield rate threshold is reached, the batch of MTK chips will be shipped out;

[0040] If the set yield rate threshold is not reached, the batch of MTK chips will be retested, and the abnormal MTK chips will be screened out and recycled.

[0041] In a second aspect, an embodiment of the present application provides a DDR detection system based on an MTK chip, the system comprising: a memory and a processor, the memory comprising a program of a DDR detection method based on an MTK chip, and the program of the DDR detection method based on an MTK chip is executed by the processor to implement the following steps:

[0042] Get MTK chip parameters, write storage program based on MTK chip parameters, and generate setting storage information;

[0043] Starting a DDR test program, testing the set storage information based on the DDR test program, and generating a test result;

[0044] Analyze the storage performance information of the storage space based on the detection result, and analyze whether the storage performance information meets the set condition information;

[0045] If the set condition information is met, the test results will be transmitted to the terminal in real time;

[0046] If the set condition information is not met, the abnormal information of the storage space is analyzed, and the write storage program is adjusted based on the abnormal information to change the set storage information.

[0047] Optionally, in the DDR detection system based on the MTK chip described in the embodiment of the present application, obtaining the MTK chip parameters, writing the storage program based on the MTK chip parameters, and generating the setting storage information specifically include:

[0048] Get MTK chip parameters, and select multiple storage programs based on the MTK chip parameters;

[0049] Set the write timing information, match the corresponding storage program based on the write timing information, and generate the write time node of each storage program;

[0050] Sequentially write multiple storage programs according to write timing information based on the write time node to obtain write status information;

[0051] The write time is adjusted in real time based on the write status information to generate setting storage information, and the write time is the time difference between two adjacent write time nodes.

[0052] Optionally, in the DDR detection system based on the MTK chip described in the embodiment of the present application, starting the DDR test program, detecting the set storage information based on the DDR test program, and generating the detection result specifically includes:

[0053] Select the matching DDR test program based on the MTK chip parameters, start the DDR test program, and generate test vectors and configuration information;

[0054] Acquire test signals at different time nodes, and generate test patterns based on the test signals at different time nodes;

[0055] Smoothing the test pattern to obtain an optimized test pattern;

[0056] Based on the optimized test graph, the matching degree between different time nodes and the set storage information is analyzed to obtain the test results.

[0057] In a third aspect, an embodiment of the present application further provides a computer-readable storage medium, wherein the computer-readable storage medium includes a DDR detection method program based on an MTK chip. When the DDR detection method program based on an MTK chip is executed by a processor, the steps of the DDR detection method based on an MTK chip as described in any one of the above items are implemented.

[0058] As can be seen from the above, the embodiments of the present application provide a DDR detection method, system and medium based on the MTK chip, which obtains MTK chip parameters, writes a storage program based on the MTK chip parameters, and generates set storage information; starts a DDR test program, detects the set storage information based on the DDR test program, and generates a detection result; analyzes the storage performance information of the storage space based on the detection result, and analyzes whether the storage performance information meets the set condition information; if the set condition information is met, the detection result is transmitted to the terminal in real time; if the set condition information is not met, the abnormal information of the storage space is analyzed, and the storage program is adjusted to be written based on the abnormal information to change the set storage information; analyzes the storage performance of the storage space through the DDR test program, so as to dynamically adjust the storage program according to the abnormality of the storage space, thereby improving the operation capability of the MTK chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0060] Figure 1 A flowchart of a DDR detection method based on an MTK chip provided in an embodiment of the present application;

[0061] Figure 2 A flow chart of a method for obtaining storage information of a DDR detection method based on an MTK chip provided in an embodiment of the present application;

[0062] Figure 3 This is a flow chart of a detection result analysis method of a DDR detection method based on an MTK chip provided in an embodiment of the present application. DETAILED DESCRIPTION

[0063] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0064] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0065] Please refer to Figure 1 , Figure 1 The flowchart of a DDR detection method based on an MTK chip in some embodiments of the present application. The DDR detection method based on an MTK chip is used in a terminal device, and the DDR detection method based on an MTK chip includes the following steps:

[0066] S101, obtaining MTK chip parameters, writing storage programs based on the MTK chip parameters, and generating setting storage information;

[0067] S102, starting a DDR test program, testing the set storage information based on the DDR test program, and generating a test result;

[0068] S103, analyzing the storage performance information of the storage space based on the detection result, and analyzing whether the storage performance information meets the set condition information;

[0069] S104, if the set condition information is met, the detection result is transmitted to the terminal in real time;

[0070] S105, if the set condition information is not met, analyze the abnormal information of the storage space, adjust the write storage program based on the abnormal information, and change the set storage information.

[0071] It should be noted that by analyzing the storage performance information of the storage space, the written storage program is dynamically adjusted according to the abnormal information of the storage space, and the storage information of the MTK chip is adjusted in real time to ensure that the MTK chip meets the factory requirements.

[0072] Please refer to Figure 2 , Figure 2 The flowchart of a method for obtaining storage information of a DDR detection method based on an MTK chip in some embodiments of the present application is as follows. According to an embodiment of the present invention, the MTK chip parameters are obtained, a storage program is written based on the MTK chip parameters, and the storage information is generated, specifically including:

[0073] S201, obtaining MTK chip parameters, and selecting multiple storage programs based on the MTK chip parameters;

[0074] S202, setting write timing information, matching corresponding storage programs based on the write timing information, and generating a write time node for each storage program;

[0075] S203, sequentially writing multiple storage programs according to the writing timing information based on the writing time node to obtain writing status information;

[0076] S204, adjusting the writing time in real time based on the writing status information, generating setting storage information, where the writing time is the time difference between two adjacent writing time nodes.

[0077] It should be noted that the corresponding storage program is selected by analyzing the MTK parameters, and the storage program is burned at the time node according to the set write timing information, so as to improve the writing accuracy of the storage program and ensure that the storage space meets the requirements.

[0078] Please refer to Figure 3 , Figure 3 This is a flow chart of a method for analyzing detection results of a DDR detection method based on an MTK chip in some embodiments of the present application. According to an embodiment of the present invention, starting a DDR test program, detecting the set storage information based on the DDR test program, and generating a detection result specifically includes:

[0079] S301, selecting a matching DDR test program based on MTK chip parameters, starting the DDR test program, and generating test vectors and configuration information;

[0080] S302, acquiring test signals at different time nodes, and generating test patterns based on the test signals at different time nodes;

[0081] S303, smoothing the test pattern to obtain an optimized test pattern;

[0082] S304: Analyze the matching degree between different time nodes and the set storage information based on the optimized test graph to obtain the detection result.

[0083] It should be noted that the MTK chip is tested through the DDR test program, and the test pattern is obtained and optimized during the test, so as to analyze the matching degree between the test pattern and the storage information, thereby adjusting the configuration information to ensure that the parameters of the storage space of the MTK chip are normal.

[0084] According to an embodiment of the present invention, analyzing the storage performance information of the storage space based on the detection result specifically includes:

[0085] Real-time throughput and real-time throughput rate based on the storage space of the test results;

[0086] Compare the real-time throughput with the set throughput of the storage space to obtain the throughput difference;

[0087] Obtaining first storage performance information based on the throughput difference;

[0088] Compare the real-time throughput rate with the set throughput rate of the storage space to obtain a rate difference;

[0089] obtaining second storage performance information based on the rate difference;

[0090] A weighted calculation is performed based on the first storage performance information and the second storage performance information to generate final storage performance information.

[0091] It should be noted that the difference is determined by analyzing the throughput and throughput rate of the storage space, and different weight coefficients are selected according to different differences, and the storage performance information is weightedly calculated to obtain accurate storage space performance information.

[0092] According to an embodiment of the present invention, if the set condition information is not met, the abnormal information of the storage space is analyzed, and the write storage program is adjusted based on the abnormal information, and the set storage information is changed, which specifically includes:

[0093] If the set condition information is not met, the difference information between the storage performance information and the set condition information is analyzed;

[0094] Determine whether the difference information is within a set difference range;

[0095] If it is within the set difference range, first abnormal information is generated, and the write adjustment program is adjusted in a first manner based on the first abnormal information;

[0096] If it is not within the set difference range, the difference information is analyzed to be greater than the upper limit of the difference range or less than the lower limit of the difference range;

[0097] If the difference information is less than the lower limit of the difference interval, second abnormal information is generated, and the write adjustment program is adjusted in a second manner based on the second difference information;

[0098] If the difference information is greater than the upper limit value of the difference interval, third abnormal information is generated, and the write adjustment program is adjusted in a third manner based on the third abnormal information.

[0099] It should be noted that by analyzing the difference information between the storage performance information and the set condition information, the write adjustment program is adjusted in different ways, so as to accurately modify the write program and improve the optimization function of the MTK chip storage space.

[0100] According to an embodiment of the present invention, if the set condition information is met, after the detection result is transmitted to the terminal in real time, the method further includes:

[0101] Obtain the test results and analyze the yield rate of MTK chips based on the test results;

[0102] Determine whether the yield rate of the MTK chip reaches the set yield rate threshold;

[0103] If the set yield rate threshold is reached, the batch of MTK chips will be shipped out;

[0104] If the set yield rate threshold is not reached, the batch of MTK chips will be retested, and the abnormal MTK chips will be screened out and recycled.

[0105] It should be noted that by analyzing the yield rate of MTK chips, it is determined whether the corresponding matching MTK chips meet the factory requirements, so that the MTK chips that do not meet the requirements are returned to the factory for re-inspection to improve the factory yield rate.

[0106] According to an embodiment of the present invention, the method further includes: obtaining the remaining operating space of the MTK chip and the occupied space of the DDR test program;

[0107] Compare the remaining running space of the MTK chip with the space occupied by the DDR test program;

[0108] If the remaining running space of the MTK chip is smaller than the space occupied by the DDR test program, it is determined that the MTK chip cannot run the DDR test program, and optimization strategy information is generated;

[0109] Optimize the remaining operating space of the MTK chip based on the optimization strategy information;

[0110] If the remaining running space of the MTK chip is greater than or equal to the space occupied by the DDR test program, the DDR test program is started.

[0111] It should be noted that in order to ensure the complete operation of the DDR test program, it is necessary to ensure that the remaining space of the MTK chip meets the operating requirements of the DDR test program, so as to complete the safe operation of the MTK test program, improve the test effect, and prevent test program abnormalities or memory differences during the test process.

[0112] In a second aspect, an embodiment of the present application provides a DDR detection system based on an MTK chip, the system comprising: a memory and a processor, the memory comprising a program of a DDR detection method based on an MTK chip, and when the program of the DDR detection method based on an MTK chip is executed by the processor, the following steps are implemented:

[0113] Get MTK chip parameters, write storage program based on MTK chip parameters, and generate setting storage information;

[0114] Starting a DDR test program, testing the set storage information based on the DDR test program, and generating a test result;

[0115] Analyze the storage performance information of the storage space based on the detection result, and analyze whether the storage performance information meets the set condition information;

[0116] If the set condition information is met, the test results will be transmitted to the terminal in real time;

[0117] If the set condition information is not met, the abnormal information of the storage space is analyzed, and the write storage program is adjusted based on the abnormal information to change the set storage information.

[0118] It should be noted that by analyzing the storage performance information of the storage space, the written storage program is dynamically adjusted according to the abnormal information of the storage space, and the storage information of the MTK chip is adjusted in real time to ensure that the MTK chip meets the factory requirements.

[0119] According to an embodiment of the present invention, obtaining MTK chip parameters, writing a storage program based on the MTK chip parameters, and generating setting storage information specifically include:

[0120] Get MTK chip parameters, and select multiple storage programs based on the MTK chip parameters;

[0121] Set the write timing information, match the corresponding storage program based on the write timing information, and generate the write time node of each storage program;

[0122] Sequentially write multiple storage programs according to write timing information based on the write time node to obtain write status information;

[0123] The write time is adjusted in real time based on the write status information to generate setting storage information, and the write time is the time difference between two adjacent write time nodes.

[0124] It should be noted that the corresponding storage program is selected by analyzing the MTK parameters, and the storage program is burned at the time node according to the set write timing information, so as to improve the writing accuracy of the storage program and ensure that the storage space meets the requirements.

[0125] According to an embodiment of the present invention, starting a DDR test program, testing the set storage information based on the DDR test program, and generating a test result specifically includes:

[0126] Select the matching DDR test program based on the MTK chip parameters, start the DDR test program, and generate test vectors and configuration information;

[0127] Acquire test signals at different time nodes, and generate test patterns based on the test signals at different time nodes;

[0128] Smoothing the test pattern to obtain an optimized test pattern;

[0129] Based on the optimized test graph, the matching degree between different time nodes and the set storage information is analyzed to obtain the test results.

[0130] It should be noted that the MTK chip is tested through the DDR test program, and the test pattern is obtained and optimized during the test, so as to analyze the matching degree between the test pattern and the storage information, thereby adjusting the configuration information to ensure that the parameters of the storage space of the MTK chip are normal.

[0131] According to an embodiment of the present invention, analyzing the storage performance information of the storage space based on the detection result specifically includes:

[0132] Real-time throughput and real-time throughput rate based on the storage space of the test results;

[0133] Compare the real-time throughput with the set throughput of the storage space to obtain the throughput difference;

[0134] Obtaining first storage performance information based on the throughput difference;

[0135] Compare the real-time throughput rate with the set throughput rate of the storage space to obtain a rate difference;

[0136] obtaining second storage performance information based on the rate difference;

[0137] A weighted calculation is performed based on the first storage performance information and the second storage performance information to generate final storage performance information.

[0138] It should be noted that the difference is determined by analyzing the throughput and throughput rate of the storage space, and different weight coefficients are selected according to different differences, and the storage performance information is weightedly calculated to obtain accurate storage space performance information.

[0139] According to an embodiment of the present invention, if the set condition information is not met, the abnormal information of the storage space is analyzed, and the write storage program is adjusted based on the abnormal information, and the set storage information is changed, which specifically includes:

[0140] If the set condition information is not met, the difference information between the storage performance information and the set condition information is analyzed;

[0141] Determine whether the difference information is within a set difference range;

[0142] If it is within the set difference range, first abnormal information is generated, and the write adjustment program is adjusted in a first manner based on the first abnormal information;

[0143] If it is not within the set difference range, the difference information is analyzed to be greater than the upper limit of the difference range or less than the lower limit of the difference range;

[0144] If the difference information is less than the lower limit of the difference interval, second abnormal information is generated, and the write adjustment program is adjusted in a second manner based on the second difference information;

[0145] If the difference information is greater than the upper limit value of the difference interval, third abnormal information is generated, and the write adjustment program is adjusted in a third manner based on the third abnormal information.

[0146] It should be noted that by analyzing the difference information between the storage performance information and the set condition information, the write adjustment program is adjusted in different ways, so as to accurately modify the write program and improve the optimization function of the MTK chip storage space.

[0147] According to an embodiment of the present invention, if the set condition information is met, after the detection result is transmitted to the terminal in real time, the method further includes:

[0148] Obtain the test results and analyze the yield rate of MTK chips based on the test results;

[0149] Determine whether the yield rate of the MTK chip reaches the set yield rate threshold;

[0150] If the set yield rate threshold is reached, the batch of MTK chips will be shipped out;

[0151] If the set yield rate threshold is not reached, the batch of MTK chips will be retested, and the abnormal MTK chips will be screened out and recycled.

[0152] It should be noted that by analyzing the yield rate of MTK chips, it is determined whether the corresponding matching MTK chips meet the factory requirements, so that the MTK chips that do not meet the requirements are returned to the factory for re-inspection to improve the factory yield rate.

[0153] According to an embodiment of the present invention, the method further includes: obtaining the remaining operating space of the MTK chip and the occupied space of the DDR test program;

[0154] Compare the remaining running space of the MTK chip with the space occupied by the DDR test program;

[0155] If the remaining running space of the MTK chip is smaller than the space occupied by the DDR test program, it is determined that the MTK chip cannot run the DDR test program, and optimization strategy information is generated;

[0156] Optimize the remaining operating space of the MTK chip based on the optimization strategy information;

[0157] If the remaining running space of the MTK chip is greater than or equal to the space occupied by the DDR test program, the DDR test program is started.

[0158] It should be noted that in order to ensure the complete operation of the DDR test program, it is necessary to ensure that the remaining space of the MTK chip meets the operating requirements of the DDR test program, so as to complete the safe operation of the MTK test program, improve the test effect, and prevent test program abnormalities or memory differences during the test process.

[0159] A third aspect of the present invention provides a computer-readable storage medium, which includes a DDR detection method program based on an MTK chip. When the DDR detection method program based on an MTK chip is executed by a processor, the steps of any of the above-mentioned DDR detection methods based on an MTK chip are implemented.

[0160] The present invention discloses a DDR detection method, system and medium based on MTK chip. The method obtains MTK chip parameters, writes a storage program based on the MTK chip parameters, generates set storage information; starts a DDR test program, detects the set storage information based on the DDR test program, and generates a detection result; analyzes storage performance information of a storage space based on the detection result, and analyzes whether the storage performance information meets set condition information; if the set condition information is met, transmits the detection result to a terminal in real time; if the set condition information is not met, analyzes abnormal information of the storage space, adjusts the storage program based on the abnormal information, and changes the set storage information; analyzes the storage performance of the storage space through the DDR test program, and thus dynamically adjusts the storage program according to the abnormality of the storage space, thereby improving the operation capability of the MTK chip.

[0161] In the several embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are only schematic. For example, the division of units is only a logical function division. There may be other division methods in actual implementation, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of devices or units can be electrical, mechanical or other forms.

[0162] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units; they may be located in one place or distributed on multiple network units; some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0163] In addition, all functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may be separately used as a unit, or two or more units may be integrated into one unit; the above-mentioned integrated units may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0164] Those skilled in the art can understand that: all or part of the steps of implementing the above method embodiments can be completed by hardware related to program instructions, the aforementioned program can be stored in a readable storage medium, and when the program is executed, it executes the steps of the above method embodiments; and the aforementioned storage medium includes: mobile storage devices, read-only memories (ROM, Read-Only Memory), random access memories (RAM, Random Access Memory), disks or optical disks, and other media that can store program codes.

[0165] Alternatively, if the above-mentioned integrated unit of the present invention is implemented in the form of a software function module and sold or used as an independent product, it can also be stored in a readable storage medium. Based on this understanding, the technical solution of the embodiment of the present invention can be essentially or partly reflected in the form of a software product that contributes to the prior art. The software product is stored in a storage medium and includes several instructions for a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the methods described in each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as mobile storage devices, ROM, RAM, magnetic disks or optical disks.

Claims

1. A DDR detection method based on MTK chip, characterized in that: include: Get MTK chip parameters, write storage program based on MTK chip parameters, and generate setting storage information; Starting a DDR test program, testing the set storage information based on the DDR test program, and generating a test result; Analyze the storage performance information of the storage space based on the detection result, and analyze whether the storage performance information meets the set condition information; If the set condition information is met, the test results will be transmitted to the terminal in real time; If the set condition information is not met, the abnormal information of the storage space is analyzed, and the written storage program is adjusted based on the abnormal information to change the set storage information.

2. The DDR detection method based on MTK chip according to claim 1, characterized in that: Get MTK chip parameters, write storage programs based on MTK chip parameters, and generate setting storage information, including: Get MTK chip parameters, and select multiple storage programs based on the MTK chip parameters; Set the write timing information, match the corresponding storage program based on the write timing information, and generate the write time node of each storage program; Sequentially write multiple storage programs according to write timing information based on the write time node to obtain write status information; The write time is adjusted in real time based on the write status information to generate setting storage information, and the write time is the time difference between two adjacent write time nodes.

3. The DDR detection method based on MTK chip according to claim 2, characterized in that: Start the DDR test program, test the set storage information based on the DDR test program, and generate the test results, which specifically include: Select the matching DDR test program based on the MTK chip parameters, start the DDR test program, and generate test vectors and configuration information; Acquire test signals at different time nodes, and generate test patterns based on the test signals at different time nodes; Smoothing the test pattern to obtain an optimized test pattern; Based on the optimized test graph, the matching degree between different time nodes and the set storage information is analyzed to obtain the test results.

4. The DDR detection method based on MTK chip according to claim 3, characterized in that: Analyze the storage performance information of the storage space based on the detection results, including: Analyze the real-time throughput and real-time throughput rate of the storage space based on the detection results; Compare the real-time throughput with the set throughput of the storage space to obtain the throughput difference; Obtaining first storage performance information based on the throughput difference; Compare the real-time throughput rate with the set throughput rate of the storage space to obtain a rate difference; obtaining second storage performance information based on the rate difference; A weighted calculation is performed based on the first storage performance information and the second storage performance information to generate final storage performance information.

5. The DDR detection method based on MTK chip according to claim 4, characterized in that: If the set condition information is not met, the abnormal information of the storage space is analyzed, the written storage program is adjusted based on the abnormal information, and the set storage information is changed, including: If the set condition information is not met, the difference information between the storage performance information and the set condition information is analyzed; Determine whether the difference information is within a set difference range; If it is within the set difference range, first abnormal information is generated, and the written stored program is adjusted in a first manner based on the first abnormal information; If it is not within the set difference range, the difference information is analyzed to be greater than the upper limit of the difference range or less than the lower limit of the difference range; If the difference information is less than the lower limit of the difference interval, second abnormal information is generated, and the written stored program is adjusted in a second manner based on the second abnormal information; If the difference information is greater than the upper limit value of the difference interval, third abnormal information is generated, and the written storage program is adjusted in a third manner based on the third abnormal information.

6. The DDR detection method based on MTK chip according to claim 5, characterized in that: If the set condition information is met, the test results are transmitted to the terminal in real time, and also include: Obtain the test results and analyze the yield rate of MTK chips based on the test results; Determine whether the yield rate of the MTK chip reaches a set yield rate threshold; If the set yield rate threshold is reached, the MTK chip will be shipped out of the factory; If the set yield rate threshold is not reached, the MTK chip will be retested, and the abnormal MTK chips will be screened out and recycled.

7. A DDR detection system based on MTK chip, characterized in that: The system includes: a memory and a processor, wherein the memory includes a program of a DDR detection method based on an MTK chip, and when the program of the DDR detection method based on an MTK chip is executed by the processor, the following steps are implemented: Get MTK chip parameters, write storage program based on MTK chip parameters, and generate setting storage information; Starting a DDR test program, testing the set storage information based on the DDR test program, and generating a test result; Analyze the storage performance information of the storage space based on the detection result, and analyze whether the storage performance information meets the set condition information; If the set condition information is met, the test results will be transmitted to the terminal in real time; If the set condition information is not met, the abnormal information of the storage space is analyzed, and the written storage program is adjusted based on the abnormal information to change the set storage information.

8. The DDR detection system based on MTK chip according to claim 7, characterized in that: Get MTK chip parameters, write storage programs based on MTK chip parameters, and generate setting storage information, including: Get MTK chip parameters, and select multiple storage programs based on the MTK chip parameters; Set the write timing information, match the corresponding storage program based on the write timing information, and generate the write time node of each storage program; Sequentially write multiple storage programs according to write timing information based on the write time node to obtain write status information; The write time is adjusted in real time based on the write status information to generate setting storage information, and the write time is the time difference between two adjacent write time nodes.

9. The DDR detection system based on MTK chip according to claim 8, characterized in that: Start the DDR test program, test the set storage information based on the DDR test program, and generate the test results, which specifically include: Select the matching DDR test program based on the MTK chip parameters, start the DDR test program, and generate test vectors and configuration information; Acquire test signals at different time nodes, and generate test patterns based on the test signals at different time nodes; Smoothing the test pattern to obtain an optimized test pattern; Based on the optimized test graph, the matching degree between different time nodes and the set storage information is analyzed to obtain the test results.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium includes a DDR detection method program based on an MTK chip. When the DDR detection method program based on an MTK chip is executed by a processor, the steps of the DDR detection method based on an MTK chip as claimed in any one of claims 1 to 6 are implemented.

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