A decoupling risk detection method, semiconductor process equipment and storage medium

Abstract

This specification provides a method for detecting thermocouple breakage risk. When a first temperature (a temperature equivalent to the process object temperature calculated from the measured temperature value of a first thermocouple) is the target temperature, the method acquires a second temperature (a temperature equivalent to the process object temperature calculated from the measured temperature value of a second thermocouple) and / or a pair of measured temperatures. If the difference between the first and second temperatures is greater than or equal to a first preset threshold and / or the pair of measured temperatures is greater than or equal to a second preset threshold, the method determines that the first thermocouple has a risk of breakage. The first preset threshold represents the difference between the first and second temperatures at the target temperature, within a predetermined time period before the thermocouple breakage event. The second preset threshold represents the difference between the pair of measured temperatures in this state. This method allows for accurate determination of whether the first thermocouple has a risk of breakage.

Description

Technical Field

[0001] This specification relates to the field of semiconductor technology, specifically to equipment control technology in the field of semiconductor technology, and more specifically to a method for detecting disconnection risk, semiconductor process equipment, and storage medium. Background Technology

[0002] In the fabrication of semiconductor devices, thermal processing such as oxidation and annealing are among the key processes. Oxidation is used, for example, to form the desired oxide film, while annealing is used, for example, to reduce lattice defects or stress within the material, thereby improving electron mobility and crystal quality. Driven by the ever-increasing demand for semiconductor devices, the demand for semiconductor process equipment that provides thermal processing such as oxidation and annealing is also growing.

[0003] Vertical furnace equipment is one of the semiconductor process equipment used for heat treatment processes such as oxidation and annealing. Taking a vertical furnace as an example, multiple thermocouples can be installed in the furnace. The thermocouple used to control the temperature of the process chamber can be called the first thermocouple. Controlling the temperature of the process chamber using the first thermocouple means adjusting the power of the temperature control component inside the process chamber based on the temperature measured by the first thermocouple, thereby stabilizing the chamber temperature at a set temperature (e.g., 1100℃ or 1200℃). However, in actual use, it has been found that if the first thermocouple breaks during the process, it may cause an abort in the process of processing the material (e.g., a silicon wafer), resulting in the scrapping of the material and significant economic losses.

[0004] Therefore, it is necessary to accurately detect the risk of thermocouple breakage in semiconductor process equipment. Summary of the Invention

[0005] This specification provides a method for detecting thermocouple breakage risk, a semiconductor process equipment, and a storage medium, achieving the goal of accurately detecting whether there is a risk of thermocouple breakage in the first thermocouple of the semiconductor process equipment.

[0006] To achieve the above technical objectives, the embodiments of this specification provide the following technical solutions:

[0007] Firstly, one embodiment of this specification provides a thermocouple breakage risk detection method applied to semiconductor process equipment. The semiconductor process equipment includes a process chamber, a first thermocouple, and a second thermocouple. The process chamber is used for heat treatment of the process object. The first thermocouple is located inside the process chamber, and the second thermocouple is located outside the process chamber. The thermocouple breakage risk detection method includes:

[0008] When the first temperature is the target temperature, at least one of a second temperature and a measured temperature pair is acquired. The first temperature includes a temperature value equivalent to the process object temperature calculated based on the measured temperature value of the first thermocouple. The second temperature includes a temperature value equivalent to the process object temperature calculated based on the measured temperature value of the second thermocouple. The measured temperature pair includes a third temperature and a fourth temperature, wherein the third temperature includes the measured temperature value of the first thermocouple, and the fourth temperature includes the measured temperature value of the second thermocouple.

[0009] When the difference between the first temperature and the second temperature is greater than or equal to a first preset threshold, and / or when the difference between the measured temperature pairs is greater than or equal to a second preset threshold, it is determined that the first thermocouple has a risk of failure. The first preset threshold is used to characterize the difference between the first temperature and the second temperature when the first temperature is the target temperature, at a predetermined time before the first thermocouple fails. The second preset threshold is used to characterize the difference between the measured temperature pairs when the first temperature is the target temperature, at a predetermined time before the first thermocouple fails.

[0010] Secondly, one embodiment of this specification provides a semiconductor process apparatus, comprising:

[0011] Furnace body;

[0012] A process chamber and a second thermocouple are located inside the furnace body; a first thermocouple is installed inside the process chamber; the second thermocouple is installed outside the process chamber.

[0013] A controller, including at least one memory and at least one processor, the memory being used to store computer programs;

[0014] The processor is configured to implement the thermocouple breakage risk detection method as described above by running a computer program stored in the memory, so as to detect whether the first thermocouple has a risk of breakage.

[0015] Thirdly, one embodiment of this specification also provides a computing device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the disconnection risk detection method as described above.

[0016] Fourthly, one embodiment of this specification also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the disconnection risk detection method described above.

[0017] Fifthly, embodiments of this specification provide a computer program product or computer program, the computer program product including a computer program stored in a computer-readable storage medium; the processor of the computer device reads the computer program from the computer-readable storage medium, and when the processor executes the computer program, it implements the steps of the above-described method for detecting the risk of disconnection.

[0018] As can be seen from the above technical solution, the thermocouple breakage risk detection method provided in this specification, when the first temperature (a temperature value equivalent to the process object temperature converted based on the measured temperature value of the first thermocouple) is the target temperature, acquires a second temperature (a temperature value equivalent to the process object temperature converted based on the measured temperature value of the second thermocouple) and / or a measured temperature pair, and determines that the first thermocouple has a thermocouple breakage risk when the difference between the first temperature and the second temperature is greater than or equal to a first preset threshold and / or the measured temperature pair is greater than or equal to a second preset threshold. The first preset threshold characterizes the difference between the first temperature and the second temperature when the first temperature is the target temperature, at a predetermined time before the thermocouple breakage occurs; the second preset threshold characterizes the difference between the measured temperature pairs when the first temperature is the target temperature, at a predetermined time before the thermocouple breakage occurs. The above method allows for accurate determination of whether the first thermocouple is at risk of breakage. The specific principle involves the first thermocouple detecting temperature based on the thermoelectric effect. When the first thermocouple is at a certain temperature, electron flow occurs within it. By detecting the voltage of the first thermocouple, the temperature corresponding to that voltage can be obtained. However, as the first thermocouple is used for longer periods, it may stretch due to thermal expansion and contraction. According to the resistance formula, the resistance of the first thermocouple increases after this stretching. At the same temperature, the electron flow generated by the first thermocouple remains constant (i.e., the current remains constant). Therefore, according to the voltage calculation formula, the measured voltage of the first thermocouple will increase. Because the second thermocouple is located outside the process chamber and has a relatively shorter original length, it does not exhibit significant stretching during use. Therefore, the difference between the first and second temperatures, as well as the difference between the measured temperatures, increases with the duration of use of the first thermocouple. This difference can be used as a parameter to assess the risk of thermocouple breakage. In this embodiment, at a predetermined time before thermocouple breakage, with the first temperature at the target temperature, the difference between the first and second temperatures is set as a first preset threshold, and the difference between the measured temperatures is set as a second preset threshold. If the difference between the first and second temperatures is greater than or equal to the first preset threshold and / or the difference between the measured temperatures is greater than or equal to the second preset threshold, then the first thermocouple is deemed to be at risk of breakage, achieving accurate detection of this risk. Furthermore, the first and second temperatures are easily and accurately detected, making this method simple and easy to implement. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments or prior art of this specification, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this specification. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0020] Figure 1 This is a schematic diagram illustrating the measurement principle of a thermocouple provided in this specification;

[0021] Figure 2 A schematic diagram of a semiconductor process apparatus provided for one embodiment of this specification;

[0022] Figure 3 A flowchart illustrating a method for detecting the risk of disconnection of a coupler, provided as one embodiment of this specification;

[0023] Figure 4 A schematic diagram illustrating the process of determining a first preset threshold according to one embodiment of this specification;

[0024] Figure 5 A process diagram of a process cycle provided for one embodiment of this specification;

[0025] Figure 6 A flowchart illustrating another method for detecting the risk of disconnection of a coupling, provided as one embodiment of this specification.

[0026] Figure 7 A schematic diagram of a detection device provided for one embodiment of this specification;

[0027] Figure 8 This is a schematic diagram of the structure of a computing device provided for one embodiment of this specification. Detailed Implementation

[0028] Unless otherwise defined, the technical or scientific terms used in the embodiments of this specification shall have the ordinary meaning understood by one of ordinary skill in the art to which this specification pertains. The terms "first," "second," and similar terms used in the embodiments of this specification do not indicate any order, quantity, or importance, but are merely used to avoid confusion of constituent elements.

[0029] Unless the context otherwise requires, throughout this specification, "a plurality of" means "at least two," and "including" is interpreted as open-ended or encompassing, that is, "including, but not limited to." In the description of this specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "example," "specific example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this specification. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example.

[0030] The technical solutions in the embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this specification, and not all embodiments. Based on the embodiments in this specification, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this specification.

[0031] Overview

[0032] As described in the background section, accurately detecting the remaining lifespan of the first thermocouple in a semiconductor process equipment providing heat treatment processes, in order to determine whether the first thermocouple is at risk of breakage, can effectively prevent the scrapping of the process object due to the breakage of the first thermocouple during the process. The lifespan of the first thermocouple can refer to the total time from when the first thermocouple is assembled into the semiconductor process equipment and put into use until the first thermocouple breaks. Correspondingly, the remaining lifespan of the first thermocouple refers to the time it can still be assembled and used in the equipment before the breakage occurs. Breakage can refer to the phenomenon of the resistance wire of the first thermocouple breaking. In this specification, when the remaining lifespan of the first thermocouple is less than a certain value (e.g., one week, two weeks, or one month), it is said that the first thermocouple is at risk of breakage.

[0033] As mentioned earlier, detecting the risk of thermocouple breakage in semiconductor process equipment is crucial. However, currently, there is no effective method for detecting this risk. Related technologies propose measuring the resistance value of the first thermocouple and inferring the risk of breakage based on changes in this resistance. However, in actual use, the change in the resistance value of the first thermocouple is extremely small. Even with high-precision resistance measuring instruments, it is difficult to accurately measure the change in resistance, resulting in poor accuracy in determining the risk of thermocouple breakage by measuring its resistance. Therefore, it is impossible to accurately determine the risk of thermocouple breakage.

[0034] To solve this problem, refer to Figure 1The inventors, through studying the temperature measurement principle of thermocouples (TCs), discovered that thermocouples typically consist of two metal conductors of different compositions. One end of these two conductors is connected together, and the other end is connected to a sampling unit. Taking an R-type thermocouple (also known as a noble metal thermocouple) as an example, an R-type thermocouple is composed of platinum and rhodium wires. When an R-type thermocouple is at different temperatures, different amounts of electron flow occur at the junction of the two metal wires (in... Figure 1 In this circuit, e represents an electron, which allows the sampling unit to measure the potential difference E corresponding to the temperature (this voltage is called the Seebeck potential). The sampling unit then converts the input potential difference into the corresponding detection temperature and outputs it.

[0035] However, in semiconductor process equipment that provides heat treatment processes, since the first thermocouple is placed inside the process chamber during the process, and the metal wire of the first thermocouple (i.e., platinum metal wire and metal wire) is relatively long, the first thermocouple will elongate due to thermal expansion and contraction during use. This elongates the metal wire of the first thermocouple. According to the resistance calculation formula R = ρL / S, with the resistivity ρ remaining constant, an increase in the length L of the metal wire and / or a decrease in the cross-sectional area S of the metal wire will both lead to an increase in resistance R. Therefore, as the first thermocouple is put into use for a longer period of time, its resistance will increase. Meanwhile, a second thermocouple is also provided in the semiconductor process equipment, located outside the process chamber. The second thermocouple can be inserted into a heating element (such as a heating wire) so that the measured temperature value of the second thermocouple is close to the temperature of the heating element itself. Since the heated part of the second thermocouple is only the part inserted into the heating element, and the length of the second thermocouple is generally less than that of the first thermocouple, the length of the second thermocouple does not change much with the increase of its service time. Correspondingly, the resistance of the second thermocouple does not change much with the increase of its service time.

[0036] refer to Figure 2 , Figure 2Taking a vertical furnace as an example, the feasible placement positions of the first thermocouple 1 and the second thermocouple 5 are shown. Before the vertical furnace is put into use, a third thermocouple 4 can also be installed in the furnace. The third thermocouple 4 is also located inside the process chamber 3. Unlike the first thermocouple 1, which is located inside the process chamber 3 but outside the quartz tube, the third thermocouple 4 can be placed close to the process object 2 (e.g., a silicon wafer) (e.g., inside the quartz tube, close to the process object). This allows the measured temperature value of the third thermocouple 4 to be closest to the actual temperature of the process object 2. However, during the actual process, the crystal boat 6 carrying the process object 2 will rotate to ensure uniform heating. To avoid metal contamination of the process object 2 by the third thermocouple 4 inside the quartz tube, the third thermocouple 4 needs to be removed before the actual process begins. In this case, another thermocouple is used to control the temperature of the process chamber 3. To eliminate the temperature difference between the actual temperature of the process object 2 and the measured temperature of the actual controlled object (e.g., the first thermocouple 1), during equipment installation or maintenance, compensation values ​​for the measured temperature values ​​of the first thermocouple 1 and the second thermocouple 5 can be obtained using the measured temperature value of the third thermocouple 4. Based on these compensation values, the measured temperature value of the first thermocouple 1 is compensated to obtain a first temperature close to (or equivalent to) the actual temperature of the process object 2, and the measured temperature value of the second thermocouple 5 is compensated to obtain a second temperature close to (or equivalent to) the actual temperature of the process object. Thus, the first and second temperatures obtained through correction can equivalently reflect the temperature of the process object. In some embodiments, depending on the location and function of each thermocouple, the first thermocouple 1 may also be called an Inner TC, the second thermocouple 5 may also be called an Outer TC, and the third thermocouple 4 may also be called a Profile TC.

[0037] Based on the above analysis, it can be seen that the resistance of the first thermocouple increases with the increase of its service life, while the resistance of the second thermocouple does not change significantly with the increase of its service life. Therefore, when using the first thermocouple as the control object for temperature control of the process chamber, under the same set temperature, the voltage value measured by the sampling unit corresponding to the first thermocouple will increase with the increase of its resistance, while the voltage value measured by the sampling unit corresponding to the second thermocouple will not increase significantly. This results in the difference between the measured temperature values ​​of the first and second thermocouples increasing with the increase of their service life. Correspondingly, the difference between the first and second temperatures will also increase with the increase of their service life. Therefore, a system can be established for the first thermocouple... A correlation can be established between the difference between a first temperature and a second temperature and the remaining life of the first thermocouple. That is, when the difference between the first temperature and the second temperature is greater than a set threshold, the remaining life of the first thermocouple can be considered insufficient, and there is a risk of thermocouple breakage. Similarly, a correlation can also be established between the difference between a third temperature (i.e., the measured temperature value of the first thermocouple) and a fourth temperature (i.e., the measured temperature value of the second thermocouple) and the remaining life of the first thermocouple. That is, when the difference between the third temperature and the fourth temperature is greater than another set threshold, the remaining life of the first thermocouple can be considered insufficient, and there is a risk of thermocouple breakage.

[0038] Based on the above concept, this specification provides a method for detecting the risk of couple failure. The following will describe the method for detecting the risk of couple failure provided by this specification in conjunction with the accompanying drawings.

[0039] Exemplary methods

[0040] To be applied to, for example Figure 2 Taking the semiconductor process equipment shown as an example, one embodiment of this specification provides a method for detecting thermocouple breakage risk. The semiconductor process equipment includes a process chamber, a first thermocouple, and a second thermocouple. The process chamber is used for heat treatment of the process object. The first thermocouple is located inside the process chamber, and the second thermocouple is located outside the process chamber. Figure 3 As shown, the method includes:

[0041] S301: When the first temperature is the target temperature, acquire at least one of a second temperature and a measured temperature pair, wherein the first temperature includes a temperature value equivalent to the process object temperature calculated based on the measured temperature value of the first thermocouple; the second temperature includes a temperature value equivalent to the process object temperature calculated based on the measured temperature value of the second thermocouple; the measured temperature pair includes a third temperature and a fourth temperature, wherein the third temperature includes the measured temperature value of the first thermocouple, and the fourth temperature includes the measured temperature value of the second thermocouple;

[0042] In this embodiment, step S301 can be implemented using a first thermocouple as the controlled object. Specifically, the first thermocouple is configured as the controlled object for the process chamber temperature in the controller (e.g., a lower-level machine) of the semiconductor process equipment by configuring a process recipe. This allows the first temperature to control the temperature of the process chamber during the actual process. (For example, controlling the process chamber temperature using the first temperature can be achieved by using the relationship between the first temperature and a set target temperature to determine the output power of the heating element in the process chamber. The heating element then heats the process chamber according to the determined output power, causing the temperature of the process chamber to rise towards or remain at the target temperature.) When the first temperature reaches the target temperature, it indicates that the temperature of the process chamber has reached the set value. At least one of the second temperature and the measured temperature pair can be obtained to facilitate subsequent assessment of the risk of thermocouple failure based on the difference between the first and second temperatures, and / or the difference between the measured temperature pairs.

[0043] S302: When the difference between the first temperature and the second temperature is greater than or equal to a first preset threshold, and / or when the difference between the measured temperature pairs is greater than or equal to a second preset threshold, it is determined that the first thermocouple has a risk of thermocouple breakage. The first preset threshold is used to characterize the difference between the first temperature and the second temperature when the first temperature is the target temperature, at a predetermined time before the first thermocouple breaks. The second preset threshold is used to characterize the difference between the measured temperature pairs when the first temperature is the target temperature, at a predetermined time before the first thermocouple breaks.

[0044] As mentioned earlier, the resistance of the first thermocouple increases with usage time. When the first thermocouple is in normal condition, its potential difference E_ at 1200℃ is... 1200℃ For example, the potential difference could be 1μV. As the first thermocouple is used for longer periods, its condition deteriorates (i.e., it stretches). At 1150℃, the potential difference can reach 1μV. While the actual temperature inside the process chamber is 1150℃, the first temperature corresponding to the potential difference output by the first thermocouple is 1200℃. When the first thermocouple is the controlled object, the controller might mistakenly believe the set temperature of 1200℃ has been reached, thus reducing the power of the heating element. However, when the actual temperature is 1150℃, the second temperature derived from the temperature measurement of the second thermocouple remains relatively accurate, around 1150℃. This leads to an error in the first temperature T. Inner* With the second temperature T Outer* The difference increases. Similarly, the third temperature T Inner TC With the fourth temperature T Outer TC The difference will also increase.

[0045] Please refer to Table 1 below for details:

[0046] Table 1

[0047] First thermocouple Potential difference Actual temperature power <![CDATA[T Inner* -T Outer* ]]> <![CDATA[T Inner TC -T Outer TC ]]> normal <![CDATA[E_ 1200℃ ]]> 1200℃ deterioration <![CDATA[E_ 1200℃ ]]> <1200℃ ↓ ↑ ↑

[0048] The above analysis shows that the difference between the first temperature and the second temperature, as well as the difference between the measured temperatures, can characterize the remaining lifespan of the first thermocouple. Therefore, taking the first thermocouple at a predetermined time before it breaks down, with the first temperature at the target temperature, the difference between the first temperature and the second temperature as a first preset threshold, allows this threshold to characterize the remaining lifespan of the first thermocouple at that predetermined time. As the analysis shows, the larger the difference between the first temperature and the second temperature, the more pronounced the thermocouple stretching phenomenon, the higher the resistance of the first thermocouple, and the shorter its remaining lifespan. Therefore, when the difference between the first temperature and the second temperature exceeds this first preset threshold, it can be determined that the first thermocouple may be at risk of breaking down.

[0049] Similarly, the difference between the measured temperatures at a predetermined time before the first thermocouple breaks, when the first temperature is the target temperature, is used as a second preset threshold. This second preset threshold characterizes the remaining lifespan of the first thermocouple at the predetermined time before the thermocouple breaks. As analyzed above, the larger the difference between the third and fourth temperatures, the more pronounced the thermocouple stretching phenomenon, the higher the resistance of the first thermocouple, and the shorter its remaining lifespan. Therefore, when the difference between the third and fourth temperatures exceeds this first preset threshold, it can be determined that the first thermocouple may be at risk of breaking. Since the thermocouple sampling unit can accurately reflect the resistance change of the thermocouple as a voltage change at the same temperature, the above method can accurately detect the risk of thermocouple breakage.

[0050] The predetermined time can refer to a duration set in advance according to requirements. For example, the predetermined time could be one week, two weeks, ten days, fifteen days, three weeks, etc. For instance, when the predetermined time is two weeks, the first preset threshold represents the difference between the first temperature and the second temperature two weeks before the first thermocouple breaks, when the first temperature is the target temperature. Similarly, the second preset threshold represents the difference between the measured temperatures two weeks before the first thermocouple breaks, when the first temperature is the target temperature. This specification does not limit the specific value of the predetermined time; it depends on the actual situation. In some embodiments, feasible values ​​for the first preset threshold and the second preset threshold can be obtained experimentally. For example, experimentally, the difference between the first temperature and the second temperature or the difference between the measured temperature pairs is measured as the time the first thermocouple is put into use increases, until the first thermocouple breaks. The difference between the first temperature and the second temperature and the difference between the measured temperature pairs recorded at a predetermined time before the thermocouple breaks are respectively used as the first preset threshold and the second preset threshold. In addition, in other embodiments of this specification, the first preset threshold and the second preset threshold can also be obtained by simulation calculation or other methods. This specification does not limit this, and it depends on the actual situation.

[0051] It is understood that this embodiment provides several feasible implementation methods for the disconnection risk detection method, which are described in detail below:

[0052] (1) When the first temperature is the target temperature, the second temperature is obtained. When the difference between the first temperature and the second temperature is greater than the first preset threshold, it is determined that the first thermocouple has a risk of breaking.

[0053] (2) When the first temperature is the target temperature, a measured temperature pair is obtained. When the difference between the measured temperature pairs is greater than the second preset threshold, it is determined that the first thermocouple has a risk of breaking.

[0054] (3) When the first temperature is the target temperature, the second temperature and the measured temperature pair are obtained. When the difference between the first temperature and the second temperature is greater than the first preset threshold, or when the difference between the measured temperature pairs is greater than the second preset threshold, it is determined that the first thermocouple has a risk of breaking. Through this implementation method, the detection sensitivity of the risk of breaking can be improved. That is, when any of the above conditions are met, it is determined that the first thermocouple has a risk of breaking, which can largely avoid the risk of the first thermocouple breaking during the process.

[0055] (4) When the first temperature is the target temperature, the second temperature and the measured temperature pair are obtained. When the difference between the first temperature and the second temperature is greater than the first preset threshold, and when the difference between the measured temperature pairs is greater than the second preset threshold, it is determined that the first thermocouple has a risk of breaking. In this embodiment, the first thermocouple is determined to have a risk of breaking only when both of the above conditions are met, which can reduce the probability of misjudging that the first thermocouple has a risk of breaking.

[0056] The above-mentioned implementation methods are based on the same concept, which is to associate the remaining life of the first thermocouple with the temperature of the first thermocouple and the second thermocouple (which can be the measured temperature value or the temperature value equivalent to the temperature of the process object). By comparing the temperature difference between the two thermocouples with the set thresholds (the first preset threshold and the second preset threshold), the determination of whether the first thermocouple has a risk of breakage (or insufficient remaining life) is realized.

[0057] In some embodiments, steps S301 to S302 can be performed in a non-process state, meaning that the semiconductor process equipment does not actually contain the process object, and the equipment does not actually perform the process on the process object. In other embodiments, steps S301 to S302 can also be performed in a process state, meaning that the semiconductor process equipment actually contains the process object, and the equipment performs the process on the process object while executing the above-described disconnection risk detection method.

[0058] In order to obtain a first temperature or a second temperature equivalent to the process target temperature when controlling the temperature of the process chamber based on a first thermocouple or a second thermocouple, thereby making the temperature control of the semiconductor process equipment for the target chamber temperature closer to the process target temperature, in one embodiment of this specification, obtaining the second temperature when the first temperature is the target temperature includes:

[0059] The first temperature value is obtained based on the measured temperature value of the first thermocouple and the first compensation value; the first compensation value includes the difference between the temperature of the process object and the measured temperature value of the first thermocouple.

[0060] When the first temperature value is the target temperature, the measured temperature value of the second thermocouple is corrected according to the first compensation value and the second compensation value to obtain the second temperature value; the second compensation value includes the difference between the measured temperature value of the first thermocouple and the measured temperature value of the second thermocouple.

[0061] As mentioned earlier, during the installation or maintenance phase of semiconductor equipment, the first and second compensation values ​​can be obtained through a third thermocouple within the semiconductor process equipment. During installation or maintenance, since the third thermocouple is positioned closest to the process object, the temperature measured by the third thermocouple can be considered as the process object temperature. By executing the Auto Profile strategy, the first and second compensation values ​​can be obtained.

[0062] Specifically, the process of implementing the above-mentioned automatic configuration strategy may include: using a third thermocouple as the controlled object, that is, controlling the temperature of the process chamber based on the measured temperature value of the third thermocouple. For example, the output power of the heating element can be determined based on the measured temperature value of the third thermocouple, so that the heating element operates at that output power, thereby achieving temperature control of the process chamber. When the temperature of the process chamber reaches the set target temperature (the target temperature may be, for example, 1100℃ or 1200℃), the process enters the Profile isothermal stage. In this stage, the measured temperature value of the third thermocouple can be approximately considered to be equivalent to the temperature of the process object. In this stage, the measured temperature value T of the first thermocouple is obtained. InnerTC The measured temperature value T of the third thermocouple ProfileTC The first compensation value is obtained according to formula (1), and the first compensation value can be stored in the Offset Table (compensation table).

[0063] Offset Tab = T ProfileTC –T InnerTC (1); Offset Tab indicates the first compensation value.

[0064] Considering that the first thermocouple may fail in some situations, in order to utilize the second thermocouple as the control object in such cases and meet the normal process flow requirements, a second compensation value can be obtained during the aforementioned isothermal stage. This compensation, through the first and second compensation values, ensures that the measured temperature value of the second thermocouple is equivalent to the temperature of the process object. During the aforementioned Profile isothermal stage, the measured temperature value T of the second thermocouple is simultaneously obtained. Outer TC The second compensation value is obtained according to formula (2), and this second compensation value can be stored in Profile. In the configuration table.

[0065] Profile Tab=T Inner TC -T Outer TC (2); Profile Tab indicates the second compensation value.

[0066] In some implementations, in addition to compensating the measured temperature values ​​of the first and second thermocouples with a first compensation value and a second compensation value, a third compensation value can be obtained through flatzone measurement to ensure the uniformity of the longitudinal thermal field in the process chamber. The flatzone measurement process may include:

[0067] The first thermocouple is used as the controlled object for temperature control in the process chamber. A moving fixture is used to move the third thermocouple in the process chamber from top to bottom. During the movement, a graph showing the relationship between the temperature measurement value of the third thermocouple and its location is obtained. In this graph, the horizontal axis represents the location of the third thermocouple, and the vertical axis represents the temperature measurement value. By adjusting the value of the third compensation value, the difference between the temperature measurement value of the third thermocouple at different locations and the set target temperature in the graph is ensured not to exceed an allowable value (e.g., 1°C). The third compensation value is obtained in this way and stored in the WaferTC Table (Wafer Thermocouple Table).

[0068] By using the first compensation value, the second compensation value, and the third compensation value, the measured temperature values ​​of the first thermocouple and the second thermocouple can be made approximately equivalent to the temperature of the process object, and the longitudinal thermal field in the process chamber can be stabilized at a set value. The process of compensating the measured temperature values ​​of the first thermocouple and the second thermocouple using the first compensation value, the second compensation value, and the third compensation value can be expressed as follows:

[0069] T Profile* =T Profile TC (3);

[0070] T Profile* ==T Inner* =T Inner TC +Offset Tab+WaferTC Tab (4);

[0071] T Profile* ==T Outer* =T Outer TC +Profile Tab+Offset Tab+WaferTC Tab (5).

[0072] Formula (3) indicates that the measured temperature value of the third thermocouple is taken as the process object temperature T. Profile* This temperature can be directly used for temperature control of the process chamber. Profile* ==T Inner* This means that the first temperature is equivalent to T. Profile* Similarly, T Profile* ==T Outer* This indicates that the second temperature is equivalent to T. Profile*Offset Tab, Profile Tab, and WaferTCTab represent the first compensation value, the second compensation value, and the third compensation value, respectively.

[0073] To minimize the temperature difference between the first and second temperatures caused by the increased resistance of the first thermocouple during use, and to ensure that no significant temperature difference occurs when temperature control is based on the second thermocouple in the event of a first thermocouple failure, in one embodiment of this specification, the thermocouple failure risk detection method further includes:

[0074] When the difference between the first temperature and the second temperature is less than the first preset threshold, the difference between the first temperature and the second temperature is used as a compensation adjustment value.

[0075] The second compensation value is corrected based on the compensation adjustment value.

[0076] As mentioned above, due to the increase in resistance of the first thermocouple during use, the second compensation value determined during the installation or maintenance phase can no longer accurately reflect the difference between the first and second temperatures at the target temperature. Therefore, it is necessary to correct the second compensation value.

[0077] In this process, the following relationships exist:

[0078] T Inner* ==T Inner TC +Offset Tab+WaferTC Tab (6);

[0079] T Inner* ==T Outer* =T Outer TC +Profile Tab+Offset Tab+WaferTC Tab (7);

[0080] The compensation adjustment value △Profile can be expressed as the difference between formula (6) and formula (7), that is:

[0081] △Profile=T Inner* -T Outer* =T Inner TC -(T Outer TC +Profile_oldTab), Profile_oldTab represents the second compensation value before correction, and the second compensation value after correction is Profile_New=Profile_old+△Profile.

[0082] After obtaining the corrected second compensation value, the first temperature and the second temperature can be kept approximately equal based on the corrected second compensation value in subsequent processes. This avoids situations where, due to the failure of the first thermocouple, the second thermocouple is used as the control object, resulting in a large difference between the second temperature and the process object temperature.

[0083] The process of obtaining the compensation adjustment value, the process of correcting the second compensation value, and steps S301 to S302 described above can all be automatically executed by the controller of the semiconductor process equipment. This automatic execution process can be called the Auto Inner (automatic first thermocouple calibration) process.

[0084] To avoid the problem of process disruption caused by the absence of a spare first thermocouple to replace it due to the risk of thermocouple breakage, in some embodiments, the thermocouple breakage risk detection method further includes:

[0085] When the difference between the first temperature and the second temperature is greater than or equal to the first preset threshold, the second temperature is corrected based on the first compensation value and the corrected second compensation value, and the temperature of the process chamber is controlled by the corrected second temperature.

[0086] In this embodiment, if there is a risk of first thermocouple breakage in the equipment and no suitable first thermocouple is available to replace it, to prevent damage to the first thermocouple during the process and thus scrapping the process object, the first thermocouple with the risk of breakage can be removed. By modifying the process formula of the semiconductor process equipment, a second thermocouple can be used as the control object. This allows the semiconductor process equipment to correct the second temperature using the first compensation value and the corrected second compensation value, and to use the corrected second temperature to control the temperature of the process chamber, thereby ensuring the normal progress of the process and avoiding the situation where the process cannot proceed due to the risk of first thermocouple breakage.

[0087] In some implementations, in order to achieve accurate temperature control in different areas, the process chamber may include multiple heating zones, each of which includes the first thermocouple and the second thermocouple; in order to accurately detect the risk of thermocouple breakage in each process zone, the multiple heating zones correspond one-to-one with multiple first preset thresholds, and / or, the multiple heating zones correspond one-to-one with multiple second preset thresholds.

[0088] The step of determining that the first thermocouple is at risk of breakage when the difference between the first temperature and the second temperature is greater than or equal to a first preset threshold includes:

[0089] If the difference between the first temperature and the second temperature in the target heating range is greater than or equal to the first preset threshold corresponding to the heating range, then it is determined that the first thermocouple in the target heating range is at risk of breaking.

[0090] and / or

[0091] If the difference between the third temperature and the fourth temperature in the target heating range is greater than or equal to the second preset threshold corresponding to the heating range, then it is determined that the first thermocouple in the target heating range is at risk of breaking.

[0092] The number of heating zones in the process chamber can be determined according to actual conditions. In some embodiments, the number of heating zones in the process chamber can range from 3 to 8, and each heating zone can perform heat treatment on multiple process objects. The first preset threshold corresponding to each process chamber can be different. For example, in Figure 2 The semiconductor process equipment shown includes five heating zones, each corresponding to a different first preset threshold. Similarly, the second preset thresholds corresponding to each heating zone can also be different. This specification does not limit this.

[0093] In this embodiment, by setting corresponding first preset thresholds and / or second preset thresholds for each heating zone, each heating zone is better matched with its corresponding thresholds (i.e., the first preset threshold and the second preset threshold), which helps to increase the accuracy of the risk assessment of thermocouple breakage in each heating zone.

[0094] The following embodiment of this specification provides a feasible process for determining a first preset threshold, such as... Figure 4 As shown, it includes:

[0095] S401: Perform multiple process cycles on the experimental semiconductor process equipment and record the experimental difference corresponding to each process cycle; the experimental semiconductor process equipment includes a first thermocouple located inside the process chamber and a second thermocouple located outside the process chamber; the experimental difference includes the difference between the first experimental temperature and the second experimental temperature when the first experimental temperature is at the target temperature, the first experimental temperature includes a temperature value equivalent to the temperature of the process object converted based on the measured temperature of the first thermocouple of the experimental semiconductor process equipment, and the second experimental temperature includes a temperature value equivalent to the temperature of the process object converted based on the measured temperature of the second thermocouple of the experimental semiconductor process equipment;

[0096] The process cycle includes: using the first experimental temperature to control the process chamber of the experimental semiconductor process equipment to heat up to the target temperature, and when the first experimental temperature is equal to the target temperature, obtaining the experimental difference corresponding to the process cycle;

[0097] S402: The experimental difference corresponding to the target process cycle is used as the first preset threshold; the target process cycle includes the process cycle before the process cycle in which the first thermocouple of the experimental semiconductor process equipment experiences a thermocouple breakage phenomenon.

[0098] Experimental semiconductor process equipment can refer to semiconductor process equipment used to determine a first preset threshold, and is of the same type / model as the semiconductor process equipment expected to be put into use. The type and location of the first and second thermocouples in the experimental semiconductor process equipment can be the same as those in the semiconductor process equipment mentioned above.

[0099] In step S401, each process cycle can also be called a deterioration experiment. The interval between two adjacent process cycles can be the same (e.g., one week, two weeks, or one month), or the interval between two adjacent process cycles can be different. This specification does not limit this.

[0100] The target temperature could be, for example, 1100℃, 1150℃, or 1200℃, etc. Taking a target temperature of 1200℃ as an example, the process of performing multiple process cycles can be referenced. Figure 5 , Figure 5 The horizontal axis represents time in minutes (min), and the vertical axis represents temperature in degrees Celsius (°C). When the first temperature is below 850°C, the process chamber is heated at a rate of 40°C / min. When the first temperature is above 850°C, the process chamber is heated at a rate of 20°C / min until the temperature of the process chamber (i.e., the first temperature) reaches 1200°C.

[0101] After reaching 1200℃, the process chamber is kept at 1200℃ for 30 minutes. During this process, the first and second experimental temperatures are obtained.

[0102] The temperature of the process chamber is reduced to 300°C before heating by using RCU Max FRQ (Rapid Cooling Unit Max Frequency).

[0103] Each process cycle can last for 2 hours, and multiple process cycles are performed until the first thermocouple breaks.

[0104] The heating rate and target temperature in the above process cycle are for illustrative purposes only and should not be regarded as a limitation on the thermocouple breakage risk detection method provided in the embodiments of this specification. The target temperature, heating rate and holding time at the target temperature can be adjusted according to the actual situation, and this specification does not limit them.

[0105] Using the above method, the experimental difference corresponding to each process cycle can be obtained. The experimental difference corresponding to the process cycle before the first thermocouple breaks down (e.g., one week, two weeks, three weeks, etc.) can be used as the first preset threshold.

[0106] Similarly, the method for determining the second preset threshold can also refer to the method for determining the first preset threshold, which will not be elaborated here.

[0107] When the experimental semiconductor process equipment includes multiple experimental heating zones, in order to determine a more accurate first preset threshold, in one embodiment of this specification, each of the experimental heating zones includes the first thermocouple and the second thermocouple.

[0108] The target process cycle includes: a process cycle of a predetermined time prior to the process cycle in which the first thermocouple in any of the experimental heating zones experiences thermocouple breakage;

[0109] The step of using the experimental difference corresponding to the target process cycle as the first preset threshold includes:

[0110] The experimental difference in each heating interval during the target process cycle is used as the first preset threshold corresponding to each heating interval.

[0111] Please refer to Table 2 for details. Table 2 takes five experimental heating zones as an example. These five heating zones are represented by zone1 to zone5 in Table 2.

[0112] Table 2

[0113]

[0114] In Table 2, xxi_j represents the first preset threshold corresponding to the j-th experimental heating interval in the i-th week, i = 1, 2...n+2; j = 1, 2, 3, 4, 5.

[0115] Assuming a process cycle is performed once a week, and assuming that the first thermocouple breaks in week n+2, the process cycle executed in week n can be taken as the target process cycle, and the experimental difference in week n can be taken as the first preset threshold (Spec) corresponding to each experimental heating interval.

[0116] It is understandable that after obtaining the first preset threshold corresponding to each experimental heating zone, the first preset threshold of each heating zone in the semiconductor process equipment can be set as the first preset threshold corresponding to the experimental heating zone with the same position. For example, if the experimental heating zone 1 is located at the top of the experimental semiconductor process equipment, then the first preset threshold xxn_1 corresponding to zone 1 can be used as the first preset threshold of the heating zone located at the top of the semiconductor process equipment.

[0117] Considering that in some implementations of semiconductor process equipment, the second compensation value needs to be periodically adjusted to ensure that the second thermocouple can be used for precise temperature control when the first thermocouple breaks, in order to match the situation where the second compensation value may need to be periodically adjusted in actual practice, in one implementation, the process cycle further includes: using the experimental difference corresponding to the process cycle as a compensation adjustment value to adjust the second compensation value, wherein the second compensation value is used to characterize the difference between the measured temperature value of the second thermocouple of the experimental semiconductor process equipment and the measured temperature value of the first thermocouple.

[0118] In this embodiment, each process cycle also includes a step of correcting the second compensation value, so that the process cycle is closer to the actual use process and ensures that the determined first preset threshold can more accurately reflect the risk of the first thermocouple breaking.

[0119] In some implementations, to enable maintenance personnel of semiconductor process equipment to accurately identify the risk of thermocouple breakage, the thermocouple breakage risk detection method further includes:

[0120] When the difference between the first temperature and the second temperature is greater than or equal to a first preset threshold, an early warning message is issued, which is used to indicate that the first thermocouple is at risk of breaking.

[0121] The warning information includes, but is not limited to, at least one of the following: sound warning information, indicator light warning information, and text warning information.

[0122] In practical use, refer to Figure 6 , Figure 6 An implementation of a specific and feasible method for detecting the risk of decoupling is shown, the process of which may include:

[0123] Write the first preset threshold corresponding to each of the multiple heating spaces into the configuration file of the controller (e.g., a lower-level machine) of the semiconductor process equipment;

[0124] After the semiconductor process equipment has been in use for a certain period of time (e.g., 6 months), the method for detecting the risk of electrode breakage provided in the embodiments of this specification shall be performed periodically (e.g., every month) or irregularly.

[0125] During execution, it is determined whether the difference between the first temperature and the second temperature measured in each heating zone is greater than or equal to the first preset threshold. If so, it is determined that the first thermocouple in that heating zone has a risk of thermocouple breakage, and an early warning message is issued to instruct the maintenance personnel to replace the first thermocouple with the risk of thermocouple breakage. If not, it is determined that there is no risk of thermocouple breakage.

[0126] Exemplary device

[0127] In one exemplary embodiment of this specification, a detection device is also provided, such as... Figure 7 As shown, the detection device is applied to semiconductor process equipment, which includes a process chamber, a first thermocouple, and a second thermocouple. The process chamber is used to perform heat treatment on the process object. The first thermocouple is located inside the process chamber, and the second thermocouple is located outside the process chamber. The detection device includes:

[0128] The temperature acquisition module 701 is configured to acquire at least one of a second temperature and a measured temperature pair when the first temperature is the target temperature. The first temperature includes a temperature value equivalent to the temperature of the process object calculated based on the measured temperature value of the first thermocouple; the second temperature includes a temperature value equivalent to the temperature of the process object calculated based on the measured temperature value of the second thermocouple; the measured temperature pair includes a third temperature and a fourth temperature, the third temperature including the measured temperature value of the first thermocouple, and the fourth temperature including the measured temperature value of the second thermocouple.

[0129] The thermocouple breakage warning module 702 is used to determine that the first thermocouple is at risk of breakage when the difference between the first temperature and the second temperature is greater than or equal to a first preset threshold, and / or when the difference between the measured temperature pairs is greater than or equal to a second preset threshold. The first preset threshold is used to characterize the difference between the first temperature and the second temperature when the first temperature is the target temperature, at a predetermined time before the first thermocouple breaks. The second preset threshold is used to characterize the difference between the measured temperature pairs when the first temperature is the target temperature, at a predetermined time before the first thermocouple breaks.

[0130] Specific limitations regarding the testing device can be found in the limitations of the hybrid fault risk detection method described above, and will not be repeated here. Each module in the aforementioned testing device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the corresponding operations of each module.

[0131] Exemplary device

[0132] Another embodiment of this application also proposes a semiconductor process apparatus, such as... Figure 2 As shown, it includes:

[0133] Furnace body ( Figure 2 (not shown in the image);

[0134] The process chamber 3 and the second thermocouple 5 are located inside the furnace body; the process chamber 3 is equipped with a first thermocouple 1; the second thermocouple 5 is located outside the process chamber 3.

[0135] Controller ( Figure 2 (not shown in the image), includes at least one memory and at least one processor, the memory being used to store computer programs;

[0136] The processor is configured to implement the thermocouple breakage risk detection method as described in any of the above embodiments by running a computer program stored in the memory, so as to detect whether the first thermocouple 1 has a risk of breakage.

[0137] Another embodiment of this application also proposes a computing device, see [link to relevant documentation] Figure 8 As shown, an exemplary embodiment of this specification also provides a computing device, including: a memory and a processor, the memory storing a computer program, the processor executing the computer program to perform the steps in the disconnection risk detection method according to various embodiments of this specification described above.

[0138] The internal structure of the computing device can be as follows: Figure 8 As shown, the computing device includes a processor, memory, network interface, and input devices connected via a system bus. The processor provides computing and control capabilities. The memory includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores an operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The network interface is used to communicate with external terminals via a network connection. When the computer program is executed by the processor, it follows the steps of the disconnection risk detection method according to various embodiments of this specification as described in the above embodiments.

[0139] The processor may include the main processor, as well as baseband chips, modems, etc.

[0140] The memory stores a program that executes the technical solution of this invention, and may also store an operating system and other critical business functions. Specifically, the program may include program code, which includes computer operation instructions. More specifically, the memory may include read-only memory (ROM), other types of static storage devices capable of storing static information and instructions, random access memory (RAM), other types of dynamic storage devices capable of storing information and instructions, disk storage, flash memory, etc.

[0141] The processor can be a general-purpose processor, such as a general-purpose central processing unit (CPU), a microprocessor, etc., or an application-specific integrated circuit (ASIC), or one or more integrated circuits used to control the execution of the program of the present invention. It can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), an off-the-shelf programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0142] Input devices may include devices that receive data and information input by the user, such as keyboards, mice, cameras, scanners, light pens, voice input devices, touch screens, pedometers, or gravity sensors.

[0143] Output devices may include devices that allow information to be output to the user, such as displays, printers, speakers, etc.

[0144] The communication interface may include any transceiver-like device for communicating with other devices or communication networks, such as Ethernet, Radio Access Network (RAN), Wireless Local Area Network (WLAN), etc.

[0145] The processor executes the program stored in the memory and calls other devices, which can be used to implement the various steps of any of the disconnection risk detection methods provided in the above embodiments of this application.

[0146] The computing device may also include a display component and a voice component. The display component may be a liquid crystal display screen or an e-ink display screen. The input device of the computing device may be a touch layer covering the display component, or a button, trackball or touchpad set on the casing of the computing device, or an external keyboard, touchpad or mouse, etc.

[0147] Those skilled in the art will understand that Figure 8The structures shown are merely block diagrams of some structures related to the solutions in this specification and do not constitute a limitation on the computing devices on which the solutions in this specification are applied. Specific computing devices may include more or fewer components than those shown in the figures, or combine certain components, or have different component arrangements.

[0148] Exemplary computer program products and storage media

[0149] In addition to the methods and devices described above, the method for detecting the risk of disconnection of a couple provided in the embodiments of this specification can also be a computer program product, which includes computer program instructions that, when executed by a processor, cause the processor to perform the steps in the method for detecting the risk of disconnection of a couple according to various embodiments of this specification as described in the "Exemplary Methods" section above.

[0150] The computer program product described herein can be written in any combination of one or more programming languages ​​to perform the operations of the embodiments described herein. These programming languages ​​include object-oriented programming languages ​​such as Java and C++, as well as conventional procedural programming languages ​​such as C or similar languages. The program code can be executed entirely on the user's computing device, partially on the user's computing device, as a standalone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0151] Furthermore, embodiments of this specification also provide a computer-readable storage medium having a computer program stored thereon, the computer program being executed by a processor of the steps in the disconnection risk detection method according to various embodiments of this specification as described in the "Exemplary Methods" section above.

[0152] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the methods described above. Any references to memory, storage, databases, or other media used in the embodiments provided in this specification can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and RAMbus dynamic RAM (RDRAM), etc.

[0153] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0154] The embodiments described above are merely illustrative of several implementation methods outlined in this specification. While the descriptions are specific and detailed, they should not be construed as limiting the scope of the solutions provided in this specification. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this specification, and these all fall within the scope of protection of this specification. Therefore, the scope of protection for this patent should be determined by the appended claims.

Claims

1. A method for detecting the risk of broken coupling, characterized in that, This invention is applied to semiconductor process equipment, which includes a process chamber, a first thermocouple, and a second thermocouple. The process chamber is used to perform heat treatment on the process object. The first thermocouple is located inside the process chamber, and the second thermocouple is located outside the process chamber. The method for detecting the risk of hybridization includes: When the first temperature is the target temperature, at least one of a second temperature and a measured temperature pair is acquired. The first temperature includes a temperature value equivalent to the process object temperature calculated based on the measured temperature value of the first thermocouple. The second temperature includes a temperature value equivalent to the process object temperature calculated based on the measured temperature value of the second thermocouple. The measured temperature pair includes a third temperature and a fourth temperature, wherein the third temperature includes the measured temperature value of the first thermocouple, and the fourth temperature includes the measured temperature value of the second thermocouple. When the difference between the first temperature and the second temperature is greater than or equal to a first preset threshold, and / or when the difference between the measured temperature pairs is greater than or equal to a second preset threshold, it is determined that the first thermocouple has a risk of failure. The first preset threshold is used to characterize the difference between the first temperature and the second temperature when the first temperature is the target temperature, at a predetermined time before the first thermocouple fails. The second preset threshold is used to characterize the difference between the measured temperature pairs when the first temperature is the target temperature, at a predetermined time before the first thermocouple fails.

2. The method according to claim 1, characterized in that, When the first temperature is the target temperature, obtaining the second temperature includes: The first temperature value is obtained based on the measured temperature value of the first thermocouple and the first compensation value; the first compensation value includes the difference between the temperature of the process object and the measured temperature value of the first thermocouple. When the first temperature value is the target temperature, the measured temperature value of the second thermocouple is corrected according to the first compensation value and the second compensation value to obtain the second temperature value; the second compensation value includes the difference between the measured temperature value of the first thermocouple and the measured temperature value of the second thermocouple.

3. The method according to claim 2, characterized in that, The method for detecting the risk of broken coupling also includes: When the difference between the first temperature and the second temperature is less than the first preset threshold, the difference between the first temperature and the second temperature is used as a compensation adjustment value. The second compensation value is corrected based on the compensation adjustment value.

4. The method according to claim 3, characterized in that, The method for detecting the risk of broken coupling also includes: When the difference between the first temperature and the second temperature is greater than or equal to the first preset threshold, the second temperature is corrected based on the first compensation value and the corrected second compensation value, and the temperature of the process chamber is controlled by the corrected second temperature.

5. The method according to claim 1, characterized in that, The process chamber includes multiple heating zones, each of which includes a first thermocouple and a second thermocouple; the multiple heating zones correspond one-to-one with multiple first preset thresholds, and / or the multiple heating zones correspond one-to-one with multiple second preset thresholds; The step of determining that the first thermocouple is at risk of breakage when the difference between the first temperature and the second temperature is greater than or equal to a first preset threshold includes: If the difference between the first temperature and the second temperature in the target heating range is greater than or equal to the first preset threshold corresponding to the heating range, then it is determined that the first thermocouple in the target heating range is at risk of breaking. and / or If the difference between the third temperature and the fourth temperature in the target heating range is greater than or equal to the second preset threshold corresponding to the heating range, then it is determined that the first thermocouple in the target heating range is at risk of breaking.

6. The method according to claim 1, characterized in that, The process of determining the first preset threshold includes: Multiple process cycles are performed on the experimental semiconductor process equipment, and the experimental difference corresponding to each process cycle is recorded. The experimental semiconductor process equipment includes a first thermocouple located inside the process chamber and a second thermocouple located outside the process chamber. The experimental difference includes the difference between the first experimental temperature and the second experimental temperature when the first experimental temperature is at the target temperature. The first experimental temperature includes a temperature value equivalent to the temperature of the process object, converted from the measured temperature of the first thermocouple of the experimental semiconductor process equipment. The second experimental temperature includes a temperature value equivalent to the temperature of the process object, converted from the measured temperature of the second thermocouple of the experimental semiconductor process equipment. The process cycle includes: using the first experimental temperature to control the process chamber of the experimental semiconductor process equipment to heat up to the target temperature, and when the first experimental temperature is equal to the target temperature, obtaining the experimental difference corresponding to the process cycle; The experimental difference corresponding to the target process cycle is used as the first preset threshold; the target process cycle includes the process cycle before the process cycle in which the first thermocouple of the experimental semiconductor process equipment experiences a thermocouple breakage phenomenon, which is a predetermined time prior to the process cycle.

7. The method according to claim 6, characterized in that, The experimental semiconductor process equipment includes multiple experimental heating zones, and each experimental heating zone includes the first thermocouple and the second thermocouple. The target process cycle includes: a process cycle of a predetermined time prior to the process cycle in which the first thermocouple in any of the experimental heating zones experiences thermocouple breakage; The step of using the experimental difference corresponding to the target process cycle as the first preset threshold includes: The experimental difference in each heating interval during the target process cycle is used as the first preset threshold corresponding to each heating interval.

8. The method according to claim 6, characterized in that, The process cycle further includes: using the experimental difference corresponding to the process cycle as a compensation adjustment value to correct the second compensation value, wherein the second compensation value is used to characterize the difference between the measured temperature value of the second thermocouple of the experimental semiconductor process equipment and the measured temperature value of the first thermocouple.

9. The method according to any one of claims 1 to 8, characterized in that, The method for detecting the risk of broken coupling also includes: When the difference between the first temperature and the second temperature is greater than or equal to a first preset threshold, an early warning message is issued, which is used to indicate that the first thermocouple is at risk of breaking.

10. A semiconductor process apparatus, characterized in that, include: Furnace body; A process chamber and a second thermocouple are located inside the furnace body; a first thermocouple is installed inside the process chamber. The second thermocouple is disposed outside the process chamber; A controller, including at least one memory and at least one processor, the memory being used to store computer programs; The processor is configured to implement the thermocouple breakage risk detection method as described in any one of claims 1 to 9 by running a computer program stored in the memory, so as to detect whether the first thermocouple has a risk of breakage.

11. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program, which, when executed by a processor, implements the method for detecting the risk of disconnection of a couple as described in any one of claims 1 to 9.

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