A semiconductor light-emitting element

Abstract

This invention proposes a semiconductor light-emitting element, comprising, from bottom to top, a substrate, an n-type semiconductor, an active layer, and a p-type semiconductor, wherein an efficiency decay suppression layer is disposed between the n-type semiconductor and the active layer. This invention utilizes the efficiency decay suppression layer between the n-type semiconductor and the active layer, and by controlling the interface change angle and interface uniformity of the radiative recombination coefficient of this layer, it regulates the average residence time of charge carriers in the defect energy level, suppresses the trapping of electrons or holes at the interface defect energy level, reduces SRH nonradiative recombination, thereby improving the radiative recombination efficiency under high current injection and reducing efficiency decay under high current injection conditions.

Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic devices, and more particularly to a semiconductor light-emitting element. Background Technology

[0002] Semiconductor components, especially semiconductor light-emitting components, have a wide range of adjustable wavelengths, high luminous efficiency, energy saving and environmental protection, a long lifespan of over 100,000 hours, small size, multiple application scenarios, and strong design flexibility. As a result, they have gradually replaced incandescent and fluorescent lamps, becoming the light source for ordinary household lighting and are widely used in new scenarios, such as indoor high-resolution displays, outdoor displays, Mini-LED, Micro-LED, mobile phone TV backlights, backlighting, streetlights, car headlights, daytime running lights, car interior ambient lighting, flashlights, and other application areas.

[0003] Traditional nitride semiconductors are grown on sapphire substrates, resulting in large lattice and thermal mismatches, leading to high defect density and polarization effects, which reduce the luminous efficiency of semiconductor light-emitting devices. Simultaneously, the hole ionization efficiency of traditional nitride semiconductors is far lower than that of electron ionization, resulting in a hole concentration that is more than an order of magnitude lower than the electron concentration. Excess electrons overflow from the multiple quantum wells into the second conductivity type semiconductor, causing nonradiative recombination. The low hole ionization efficiency also makes it difficult for holes in the second conductivity type semiconductor to be effectively injected into the multiple quantum wells, leading to low hole injection efficiency and excessive electrons. The luminous efficiency of the quantum well is low; the nitride semiconductor structure has non-centrosymmetry, and strong spontaneous polarization will be generated along the c-axis direction. The piezoelectric polarization effect of lattice mismatch is superimposed to form an intrinsic polarization field; the intrinsic polarization field along the (001) direction causes a strong quantum confinement Stark effect in the multi-quantum well layer, causing band tilt and spatial separation of electron-hole wave functions, reducing the radiative recombination efficiency of electrons and holes; the refractive index, dielectric constant and other parameters of the semiconductor light-emitting element are greater than those of air, resulting in a smaller total reflection angle when the light emitted from the quantum well is emitted, and a lower light extraction efficiency. Summary of the Invention

[0004] To address one of the aforementioned technical problems, the present invention provides a semiconductor light-emitting element.

[0005] This invention provides a semiconductor light-emitting element, comprising a substrate, an n-type semiconductor, an active layer, and a p-type semiconductor arranged sequentially from bottom to top. An efficiency attenuation suppression layer is disposed between the n-type semiconductor and the active layer. The efficiency attenuation suppression layer includes a first sub-efficiency attenuation suppression layer, a second sub-efficiency attenuation suppression layer, and a third sub-efficiency attenuation suppression layer arranged sequentially from bottom to top. Each of the first, second, and third sub-efficiency attenuation suppression layers has a radiative recombination coefficient characteristic. The angle at which the trough of the radiative recombination coefficient of the first sub-efficiency attenuation suppression layer rises towards the active layer is α. The angle at which the peak of the radiative recombination coefficient of the second sub-efficiency attenuation suppression layer falls towards the active layer is β. The angle at which the peak of the radiative recombination coefficient of the third sub-efficiency attenuation suppression layer falls towards the active layer is γ. The angle at which the peak of the radiative recombination coefficient of the second sub-efficiency attenuation suppression layer falls towards the n-type semiconductor is θ. The angle at which the peak of the radiative recombination coefficient of the third sub-efficiency attenuation suppression layer falls towards the n-type semiconductor is δ, where: 10°≤α≤β≤γ≤θ≤δ≤90°.

[0006] Preferably, the first sub-efficiency attenuation suppression layer, the second sub-efficiency attenuation suppression layer, and the third sub-efficiency attenuation suppression layer all have polarized optical phonon energy characteristics. The angle at which the peak position of the polarized optical phonon energy of the first sub-efficiency attenuation suppression layer decreases towards the active layer is σ. The angle at which the valley position of the polarized optical phonon energy of the second sub-efficiency attenuation suppression layer increases towards the active layer is φ. The angle at which the valley position of the polarized optical phonon energy of the third sub-efficiency attenuation suppression layer increases towards the active layer is ψ. The angle at which the valley position of the polarized optical phonon energy of the second sub-efficiency attenuation suppression layer increases towards the n-type semiconductor is μ. The angle at which the valley position of the polarized optical phonon energy of the third sub-efficiency attenuation suppression layer increases towards the n-type semiconductor is υ, wherein: 2°≤σ≤φ≤ψ≤μ≤υ≤90°.

[0007] Preferably, the first sub-efficiency attenuation suppression layer, the second sub-efficiency attenuation suppression layer, and the third sub-efficiency attenuation suppression layer all have separation energy characteristics. The peak position of the separation energy of the first sub-efficiency attenuation suppression layer decreases towards the active layer at an angle ρ. The valley position of the separation energy of the second sub-efficiency attenuation suppression layer increases towards the active layer at an angle ω. The valley position of the separation energy of the third sub-efficiency attenuation suppression layer increases towards the active layer at an angle ε. The valley position of the separation energy of the second sub-efficiency attenuation suppression layer increases towards the n-type semiconductor at an angle η. The valley position of the separation energy of the third sub-efficiency attenuation suppression layer increases towards the n-type semiconductor at an angle κ, where: 15°≤ρ≤ω≤ε≤η≤κ≤90°.

[0008] Preferably, the first sub-efficiency decay suppression layer, the second sub-efficiency decay suppression layer, and the third sub-efficiency decay suppression layer all have peak electron drift rate characteristics. The angle at which the valley position of the peak electron drift rate of the first sub-efficiency decay suppression layer rises towards the active layer is ζ; the angle at which the peak position of the peak electron drift rate of the second sub-efficiency decay suppression layer falls towards the active layer is χ; the angle at which the peak position of the peak electron drift rate of the third sub-efficiency decay suppression layer falls towards the active layer is ν; the angle at which the peak position of the peak electron drift rate of the second sub-efficiency decay suppression layer falls towards the n-type semiconductor is π; and the angle at which the peak position of the peak electron drift rate of the third sub-efficiency decay suppression layer falls towards the n-type semiconductor is τ, wherein: 20°≤ζ≤χ≤ν≤π≤τ≤90°.

[0009] Preferably, the radiative recombination coefficient of the first sub-efficiency attenuation suppression layer, the angle at which the valley position of the peak electron drift velocity rises towards the active layer, and the angle at which the peak position of the polarized optical phonon energy and the separation energy of the first sub-efficiency attenuation suppression layer falls towards the active layer have the following relationship: 2°≤σ≤α≤ρ≤ζ≤90°.

[0010] The radiative recombination coefficient of the second sub-efficiency attenuation suppression layer, the peak position of the peak electron drift velocity and the angle of decrease towards the active layer, and the angle of increase towards the active layer of the polarized optical phonon energy and the valley position of the separation energy of the second sub-efficiency attenuation suppression layer have the following relationship: 2°≤φ≤β≤ω≤χ≤90°.

[0011] The radiative recombination coefficient of the third sub-efficiency attenuation suppression layer, the peak position of the peak electron drift velocity and the angle of decrease towards the active layer, and the valley position of the polarized optical phonon energy and the separation energy of the third sub-efficiency attenuation suppression layer and the angle of increase towards the active layer have the following relationship: 2°≤ψ≤γ≤ε≤ν≤90°.

[0012] The radiative recombination coefficient of the second sub-efficiency attenuation suppression layer, the peak position of the peak electron drift velocity and the angle of decrease towards the n-type semiconductor, and the valley position of the polarized optical phonon energy and the separation energy of the second sub-efficiency attenuation suppression layer and the angle of increase towards the n-type semiconductor have the following relationship: 2°≤μ≤θ≤η≤π≤90°.

[0013] The radiative recombination coefficient of the third sub-efficiency attenuation suppression layer, the peak position of the peak electron drift velocity and the angle of decrease towards the n-type semiconductor, and the valley position of the polarization optical phonon energy and the separation energy of the third sub-efficiency attenuation suppression layer and the angle of increase towards the n-type semiconductor have the following relationship: 2°≤υ≤δ≤κ≤τ≤90°.

[0014] Preferably, the angles at which the radiative recombination coefficient and peak electron drift velocity of the first sub-efficiency attenuation suppression layer rise towards the active layer, the angles at which the peak positions of the polarized optical phonon energy and separation energy of the first sub-efficiency attenuation suppression layer fall towards the active layer, the angles at which the peak positions of the radiative recombination coefficient and peak electron drift velocity of the second sub-efficiency attenuation suppression layer fall towards the active layer, the angles at which the trough positions of the polarized optical phonon energy and separation energy of the second sub-efficiency attenuation suppression layer rise towards the active layer, and the angles at which the peak positions of the radiative recombination coefficient and peak electron drift velocity of the third sub-efficiency attenuation suppression layer fall towards the active layer, and the angles at which the trough positions of the polarized optical phonon energy and separation energy of the third sub-efficiency attenuation suppression layer fall towards the active layer, are: The following relationships exist for the following parameters: the upward angle of the position towards the active layer; the downward angle of the peak position of the radiative recombination coefficient and peak electron drift velocity of the second sub-efficiency attenuation suppression layer towards the n-type semiconductor; the upward angle of the valley position of the polarized optical phonon energy and separation energy of the second sub-efficiency attenuation suppression layer towards the n-type semiconductor; the downward angle of the peak position of the radiative recombination coefficient and peak electron drift velocity of the third sub-efficiency attenuation suppression layer towards the n-type semiconductor; and the upward angle of the valley position of the polarized optical phonon energy and separation energy of the third sub-efficiency attenuation suppression layer towards the n-type semiconductor: 2°≤σ≤α≤ρ≤ζ≤φ≤β≤ω≤χ≤ψ≤γ≤ε≤ν≤μ≤θ≤η≤π≤υ≤δ≤κ≤τ≤90°.

[0015] Preferably, the first sub-efficiency attenuation suppression layer is any one or any combination of GaN, AlGaN, AlInGaN, AlInN, and AlN;

[0016] The second sub-efficiency attenuation suppression layer is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, and AlN;

[0017] The third sub-efficiency attenuation suppression layer is any one or any combination of InGaN, AlGaN, InN, AlInN, GaN, AlInGaN, and AlN.

[0018] Preferably, the first sub-efficiency attenuation suppression layer has density distribution characteristics, radiative recombination coefficient distribution characteristics, polarized optical phonon energy distribution characteristics, separation energy distribution characteristics, and peak electron drift velocity distribution characteristics.

[0019] The density of the first sub-efficiency attenuation suppression layer has a curve distribution of function y1=lnx+1 / x-1;

[0020] The radiative recombination coefficient of the first sub-efficiency attenuation suppression layer has a first quadrant curve distribution of the function y2=x / lnx;

[0021] The polarized optical phonon energy of the first phonon efficiency attenuation suppression layer has a function y3 = lnx / x curve distribution;

[0022] The separation energy of the first sub-efficiency attenuation suppression layer has a function y4 = lnx / ex curve distribution;

[0023] The peak electron drift velocity of the first sub-efficiency attenuation suppression layer has a first quadrant curve distribution of the function y5 = x / lnx;

[0024] Where x is the depth from the first sub-efficiency attenuation suppression layer toward the second sub-efficiency attenuation suppression layer.

[0025] Preferably, the active layer is a quantum well structure composed of a well layer and a barrier layer;

[0026] The well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the well layer thickness is from 5 angstroms to 200 angstroms.

[0027] The barrier layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the barrier layer thickness is from 10 angstroms to 400 angstroms.

[0028] Preferably, the n-type semiconductor and p-type semiconductor include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The thickness of the n-type semiconductor is from 5 angstroms to 60,000 angstroms, and the thickness of the p-type semiconductor is from 10 angstroms to 9,000 angstroms.

[0029] Preferably, the substrate comprises sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, or sapphire / SiO2 / SiN substrate. x Composite substrate, sapphire / SiN x / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0030] The beneficial effects of this invention are as follows: This invention sets an efficiency decay suppression layer between the n-type semiconductor and the active layer of the semiconductor light-emitting element, and by controlling the interface change angle and interface uniformity of the radiative recombination coefficient of the efficiency decay suppression layer, it controls the average residence time of charge carriers in the defect energy level, suppresses the trapping of electrons or holes in the interface defect energy level, reduces SRH (Shockley-Read-Hall) nonradiative recombination, thereby improving the radiative recombination efficiency under high current injection and reducing the efficiency decay under high current injection conditions, with the efficiency decay decreasing from 20-40% to 5-20%. Attached Figure Description

[0031] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0032] Figure 1 This is a schematic diagram of the structure of the semiconductor light-emitting element according to an embodiment of the present invention;

[0033] Figure 2 This is a SIMS secondary ion mass spectrum of the semiconductor light-emitting element described in an embodiment of the present invention;

[0034] Figure 3 This is a transmission electron microscope (TEM) image of the efficiency attenuation suppression layer of the semiconductor light-emitting element described in an embodiment of the present invention.

[0035] Figure 4 This is a transmission electron microscope (TEM) image of the third sub-efficiency attenuation suppression layer of the semiconductor light-emitting element described in this embodiment of the invention.

[0036] Figure 5 This is a transmission electron microscope (TEM) image of the active layer of the semiconductor light-emitting element described in an embodiment of the present invention.

[0037] Figure 6 This is a transmission electron microscope (TEM) image of the p-type semiconductor of the semiconductor light-emitting element described in an embodiment of the present invention.

[0038] Figure label:

[0039] 100. Substrate; 101. n-type semiconductor; 102. Efficiency degradation suppression layer; 103. Active layer; 104. p-type semiconductor.

[0040] 102a, First sub-efficiency attenuation suppression layer; 102b, Second sub-efficiency attenuation suppression layer; 102c, Third sub-efficiency attenuation suppression layer. Detailed Implementation

[0041] To make the technical solutions and advantages of the embodiments of this application clearer, the exemplary embodiments of this application will be described in further detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not an exhaustive list of all embodiments. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0042] like Figures 1 to 6 As shown, this embodiment proposes a semiconductor light-emitting element, including a substrate 100, an n-type semiconductor 101, an active layer 103 and a p-type semiconductor 104 arranged sequentially from bottom to top, with an efficiency attenuation suppression layer 102 disposed between the n-type semiconductor 101 and the active layer 103.

[0043] Specifically, in this embodiment, the semiconductor light-emitting element is provided with a substrate 100, an n-type semiconductor 101, an active layer 103, and a p-type semiconductor 104 sequentially from bottom to top. An efficiency attenuation suppression layer 102 is disposed between the n-type semiconductor 101 and the active layer 103. This efficiency attenuation suppression layer 102 has a multilayer structure, including a first sub-efficiency attenuation suppression layer 102a, a second sub-efficiency attenuation suppression layer b, and a third sub-efficiency attenuation suppression layer 102c sequentially from bottom to top. Each of the first sub-efficiency attenuation suppression layer 102a, the second sub-efficiency attenuation suppression layer b, and the third sub-efficiency attenuation suppression layer 102c exhibits radiative recombination coefficient characteristics. Furthermore, the radiative recombination coefficient in the first sub-efficiency attenuation suppression layer 102a, the second sub-efficiency attenuation suppression layer b, and the third sub-efficiency attenuation suppression layer 102c shows a certain trend towards the active layer 103 or the n-type semiconductor 101, specifically manifested as follows:

[0044] The radiative recombination coefficient of the first sub-efficiency attenuation suppression layer 102a shows an upward trend towards the active layer 103.

[0045] The peak position of the radiative recombination coefficient of the second sub-efficiency attenuation suppression layer b shows a decreasing trend towards the active layer 103.

[0046] The peak position of the radiative recombination coefficient of the third sub-efficiency attenuation suppression layer 102c shows a decreasing trend towards the active layer 103.

[0047] The peak position of the radiative recombination coefficient of the second sub-efficiency attenuation suppression layer b shows a decreasing trend towards the n-type semiconductor 101.

[0048] The peak position of the radiative recombination coefficient of the third sub-efficiency attenuation suppression layer 102c shows a decreasing trend towards the n-type semiconductor 101;

[0049] Specifically, the angle at which the valley position of the radiative recombination coefficient of the first sub-efficiency attenuation suppression layer 102a rises towards the active layer 103 is α; the angle at which the peak position of the radiative recombination coefficient of the second sub-efficiency attenuation suppression layer b falls towards the active layer 103 is β; the angle at which the peak position of the radiative recombination coefficient of the third sub-efficiency attenuation suppression layer 102c falls towards the active layer 103 is γ; the angle at which the peak position of the radiative recombination coefficient of the second sub-efficiency attenuation suppression layer b falls towards the n-type semiconductor 101 is θ; and the angle at which the peak position of the radiative recombination coefficient of the third sub-efficiency attenuation suppression layer 102c falls towards the n-type semiconductor 101 is δ, where: 10°≤α≤β≤γ≤θ≤δ≤90°.

[0050] In this embodiment, an efficiency decay suppression layer 102 is provided between the n-type semiconductor 101 and the active layer 103 of the semiconductor light-emitting element. By controlling the interface change angle and interface uniformity of the radiative recombination coefficient of the efficiency decay suppression layer 102, the average residence time of charge carriers in the defect energy level is controlled, the trapping of electrons or holes in the interface defect energy level is suppressed, and the non-radiative recombination of SRH (Shockley-Read-Hall) is reduced, thereby improving the radiative recombination efficiency under high current injection and reducing the efficiency decay under high current injection conditions.

[0051] In some optional embodiments, the first sub-efficiency attenuation suppression layer 102a, the second sub-efficiency attenuation suppression layer b, and the third sub-efficiency attenuation suppression layer 102c also possess polarized optical phonon energy characteristics, and the polarized optical phonon energy in the first sub-efficiency attenuation suppression layer 102a, the second sub-efficiency attenuation suppression layer b, and the third sub-efficiency attenuation suppression layer 102c exhibits a certain trend of change towards the active layer 103 or the n-type semiconductor 101, specifically manifested as follows:

[0052] The peak position of the polarized optical phonon energy in the first efficiency attenuation suppression layer 102a decreases towards the active layer 103.

[0053] The valley position of the polarized optical phonon energy of the second sub-efficiency attenuation suppression layer b shows an upward trend toward the active layer 103.

[0054] The valley position of the polarized optical phonon energy of the third sub-efficiency attenuation suppression layer 102c shows an upward trend toward the active layer 103.

[0055] The valley position of the polarized optical phonon energy of the second sub-efficiency attenuation suppression layer b shows an upward trend toward the n-type semiconductor 101.

[0056] The valley position of the polarized optical phonon energy of the third sub-efficiency attenuation suppression layer 102c shows an upward trend toward the n-type semiconductor 101.

[0057] Specifically, the angle at which the peak position of the polarized optical phonon energy of the first sub-efficiency attenuation suppression layer 102a decreases towards the active layer 103 is σ; the angle at which the valley position of the polarized optical phonon energy of the second sub-efficiency attenuation suppression layer b increases towards the active layer 103 is φ; the angle at which the valley position of the polarized optical phonon energy of the third sub-efficiency attenuation suppression layer 102c increases towards the active layer 103 is ψ; the angle at which the valley position of the polarized optical phonon energy of the second sub-efficiency attenuation suppression layer b increases towards the n-type semiconductor 101 is μ; and the angle at which the valley position of the polarized optical phonon energy of the third sub-efficiency attenuation suppression layer 102c increases towards the n-type semiconductor 101 is υ, where: 2°≤σ≤φ≤ψ≤μ≤υ≤90°.

[0058] This embodiment controls the phonon transport and minority carrier diffusion length during carrier transition by adjusting the interface change angle and interface uniformity of the polarization optical phonon energy of the efficiency decay suppression layer 102, thereby suppressing Auger recombination, improving the radiative recombination efficiency under high current injection, and reducing efficiency decay under high current injection conditions.

[0059] In some optional embodiments, the first sub-efficiency attenuation suppression layer 102a, the second sub-efficiency attenuation suppression layer b, and the third sub-efficiency attenuation suppression layer 102c also have separation energy characteristics, and the separation energy in the first sub-efficiency attenuation suppression layer 102a, the second sub-efficiency attenuation suppression layer b, and the third sub-efficiency attenuation suppression layer 102c exhibits a certain trend of change towards the active layer 103 or the n-type semiconductor 101, specifically manifested as follows:

[0060] The peak position of the separation energy of the first sub-efficiency attenuation suppression layer 102a shows a decreasing trend towards the active layer 103;

[0061] The valley position of the separation energy of the second sub-efficiency attenuation suppression layer b shows an upward trend towards the active layer 103.

[0062] The valley position of the separation energy of the third sub-efficiency attenuation suppression layer 102c shows an upward trend towards the active layer 103.

[0063] The valley position of the separation energy of the second sub-efficiency attenuation suppression layer b shows an upward trend toward the n-type semiconductor 101.

[0064] The valley position of the separation energy of the third sub-efficiency decay suppression layer 102c shows an upward trend towards the n-type semiconductor 101;

[0065] Specifically, the angle at which the peak position of the separation energy of the first sub-efficiency attenuation suppression layer 102a decreases towards the active layer 103 is ρ; the angle at which the valley position of the separation energy of the second sub-efficiency attenuation suppression layer b increases towards the active layer 103 is ω; the angle at which the valley position of the separation energy of the third sub-efficiency attenuation suppression layer 102c increases towards the active layer 103 is ε; the angle at which the valley position of the separation energy of the second sub-efficiency attenuation suppression layer b increases towards the n-type semiconductor 101 is η; and the angle at which the valley position of the separation energy of the third sub-efficiency attenuation suppression layer 102c increases towards the n-type semiconductor 101 is κ, where: 15°≤ρ≤ω≤ε≤η≤κ≤90°.

[0066] This embodiment further regulates the phonon transport and minority carrier diffusion length during carrier transition by controlling the interface change angle and interface uniformity of the separation energy of the efficiency decay suppression layer 102, thereby suppressing Auger recombination and further improving the radiative recombination efficiency under high current injection and reducing efficiency decay under high current injection conditions.

[0067] In some optional embodiments, the first sub-efficiency attenuation suppression layer 102a, the second sub-efficiency attenuation suppression layer b, and the third sub-efficiency attenuation suppression layer 102c also have peak electron drift velocity characteristics, and the peak electron drift velocities in the first sub-efficiency attenuation suppression layer 102a, the second sub-efficiency attenuation suppression layer b, and the third sub-efficiency attenuation suppression layer 102c exhibit a certain trend of change towards the active layer 103 or the n-type semiconductor 101, specifically manifested as follows:

[0068] The valley position of the peak electron drift velocity of the first sub-efficiency decay suppression layer 102a shows an upward trend toward the active layer 103.

[0069] The peak position of the peak electron drift velocity of the second sub-efficiency decay suppression layer b shows a decreasing trend towards the active layer 103.

[0070] The peak position of the peak electron drift velocity of the third sub-efficiency decay suppression layer 102c decreases towards the active layer 103.

[0071] The peak position of the peak electron drift velocity of the second sub-efficiency decay suppression layer b shows a decreasing trend towards the n-type semiconductor 101.

[0072] The peak position of the peak electron drift velocity of the third sub-efficiency decay suppression layer 102c shows a decreasing trend towards the n-type semiconductor 101.

[0073] Specifically, the upward angle of the valley position of the peak electron drift velocity of the first sub-efficiency attenuation suppression layer 102a towards the active layer 103 is ζ; the downward angle of the peak position of the peak electron drift velocity of the second sub-efficiency attenuation suppression layer b towards the active layer 103 is χ; the downward angle of the peak position of the peak electron drift velocity of the third sub-efficiency attenuation suppression layer 102c towards the active layer 103 is ν; the downward angle of the peak position of the peak electron drift velocity of the second sub-efficiency attenuation suppression layer b towards the n-type semiconductor 101 is π; and the downward angle of the peak position of the peak electron drift velocity of the third sub-efficiency attenuation suppression layer 102c towards the n-type semiconductor 101 is τ, where: 20°≤ζ≤χ≤ν≤π≤τ≤90°.

[0074] More specifically, the radiative recombination coefficient of the first sub-efficiency attenuation suppression layer 102a, the angle at which the valley position of the peak electron drift velocity rises towards the active layer 103, and the angle at which the peak position of the polarized optical phonon energy and the separation energy of the first sub-efficiency attenuation suppression layer 102a falls towards the active layer 103 have the following relationship: 2°≤σ≤α≤ρ≤ζ≤90°.

[0075] The radiative recombination coefficient of the second sub-efficiency attenuation suppression layer b, the peak position of the peak electron drift velocity, and the angle of decrease towards the active layer 103, as well as the angle of increase towards the active layer 103, of the polarization optical phonon energy and the valley position of the separation energy of the second sub-efficiency attenuation suppression layer b, have the following relationship: 2°≤φ≤β≤ω≤χ≤90°.

[0076] The radiative recombination coefficient of the third sub-efficiency attenuation suppression layer 102c, the peak position of the peak electron drift velocity and the downward angle towards the active layer 103, and the upward angle of the valley position of the polarized optical phonon energy and the separation energy of the third sub-efficiency attenuation suppression layer 102c towards the active layer 103 have the following relationship: 2°≤ψ≤γ≤ε≤ν≤90°.

[0077] The radiative recombination coefficient and the peak position of the peak electron drift velocity of the second sub-efficiency attenuation suppression layer b decreasing angle toward the n-type semiconductor 101, and the rising angle of the valley position of the polarization optical phonon energy and the separation energy of the second sub-efficiency attenuation suppression layer b toward the n-type semiconductor 101 have the following relationship: 2°≤μ≤θ≤η≤π≤90°.

[0078] The radiative recombination coefficient of the third sub-efficiency attenuation suppression layer 102c, the downward angle of the peak position of the peak electron drift velocity towards the n-type semiconductor 101, and the upward angle of the valley position of the polarization optical phonon energy and separation energy of the third sub-efficiency attenuation suppression layer 102c towards the n-type semiconductor 101 have the following relationship: 2°≤υ≤δ≤κ≤τ≤90°.

[0079] The angles at which the radiative recombination coefficient and peak electron drift velocity of the first sub-efficiency attenuation suppression layer 102a rise towards the active layer 103, the angles at which the peak positions of the polarized optical phonon energy and separation energy of the first sub-efficiency attenuation suppression layer 102a fall towards the active layer 103, the angles at which the peak positions of the radiative recombination coefficient and peak electron drift velocity of the second sub-efficiency attenuation suppression layer b fall towards the active layer 103, the angles at which the valley positions of the polarized optical phonon energy and separation energy of the second sub-efficiency attenuation suppression layer b rise towards the active layer 103, and the angles at which the peak positions of the radiative recombination coefficient and peak electron drift velocity of the third sub-efficiency attenuation suppression layer 102c fall towards the active layer 103, the angles at which the valley positions of the polarized optical phonon energy and separation energy of the third sub-efficiency attenuation suppression layer 102a fall towards the active layer 103, and the angles at which the valley positions of the radiative recombination coefficient and peak electron drift velocity of the third sub-efficiency attenuation suppression layer 102a fall towards the active layer 103, the angles at which the valley positions of the polarized optical phonon energy and separation energy of the third sub-efficiency attenuation suppression layer 102a fall towards the active layer 103, ... The following relationships exist: the rising angle of the peak position of the radiative recombination coefficient and peak electron drift velocity of the second sub-efficiency attenuation suppression layer b towards the n-type semiconductor 101; the rising angle of the valley position of the polarized optical phonon energy and separation energy of the second sub-efficiency attenuation suppression layer b towards the n-type semiconductor 101; the rising angle of the peak position of the radiative recombination coefficient and peak electron drift velocity of the third sub-efficiency attenuation suppression layer 102c towards the n-type semiconductor 101; and the rising angle of the valley position of the polarized optical phonon energy and separation energy of the third sub-efficiency attenuation suppression layer 102c towards the n-type semiconductor 101.

[0080] In some optional embodiments, the first sub-efficiency attenuation suppression layer 102a has density distribution characteristics, radiative recombination coefficient distribution characteristics, polarization optical phonon energy distribution characteristics, separation energy distribution characteristics, and peak electron drift velocity distribution characteristics, specifically manifested as follows:

[0081] The density of the first sub-efficiency attenuation suppression layer 102a has a curve distribution of function y1=lnx+1 / x-1;

[0082] The radiative recombination coefficient of the first sub-efficiency attenuation suppression layer 102a has a first quadrant curve distribution of the function y2=x / lnx;

[0083] The polarized optical phonon energy of the first sub-efficiency attenuation suppression layer 102a has a function y3 = lnx / x curve distribution;

[0084] The separation energy of the first sub-efficiency attenuation suppression layer 102a has a function y4 = lnx / ex curve distribution;

[0085] The peak electron drift velocity of the first sub-efficiency decay suppression layer 102a has a first quadrant curve distribution of the function y5=x / lnx;

[0086] Where x is the depth of the first sub-efficiency attenuation suppression layer 102a toward the second sub-efficiency attenuation suppression layer b.

[0087] This embodiment improves the radiative recombination efficiency under high current injection and reduces efficiency decay under high current injection by designing the density distribution characteristics, radiative recombination coefficient distribution characteristics, polarized optical phonon energy distribution characteristics, separation energy distribution characteristics, and peak electron drift velocity distribution characteristics of the first sub-efficiency decay suppression layer 102a.

[0088] In some optional embodiments, the first sub-efficiency attenuation suppression layer 102a is any one or any combination of GaN, AlGaN, AlInGaN, AlInN, and AlN;

[0089] The second sub-efficiency attenuation suppression layer b is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, and AlN.

[0090] The third sub-efficiency attenuation suppression layer 102c is any one or any combination of InGaN, AlGaN, InN, AlInN, GaN, AlInGaN, and AlN.

[0091] In some alternative embodiments, the active layer 103 is a quantum well structure consisting of a well layer and a barrier layer.

[0092] The well layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness of the well layer is from 5 angstroms to 200 angstroms.

[0093] The barrier layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the barrier layer thickness is from 10 angstroms to 400 angstroms.

[0094] In some alternative embodiments, the n-type semiconductor 101 and the p-type semiconductor 104 include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The thickness of the n-type semiconductor 101 is from 5 angstroms to 60,000 angstroms, and the thickness of the p-type semiconductor 104 is from 10 angstroms to 9,000 angstroms.

[0095] In some alternative embodiments, the substrate 100 includes sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, and sapphire / SiO2 / SiN substrate. x Composite substrate, sapphire / SiN x / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0096] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A semiconductor light-emitting element, comprising a substrate, an n-type semiconductor, an active layer, and a p-type semiconductor arranged sequentially from bottom to top, characterized in that, An efficiency attenuation suppression layer is disposed between the n-type semiconductor and the active layer. The efficiency attenuation suppression layer includes a first sub-efficiency attenuation suppression layer, a second sub-efficiency attenuation suppression layer, and a third sub-efficiency attenuation suppression layer disposed sequentially from bottom to top. Each of the first, second, and third sub-efficiency attenuation suppression layers has a radiative recombination coefficient characteristic. The angle at which the trough of the radiative recombination coefficient of the first sub-efficiency attenuation suppression layer rises towards the active layer is α. The angle at which the peak of the radiative recombination coefficient of the second sub-efficiency attenuation suppression layer falls towards the active layer is β. The angle at which the peak of the radiative recombination coefficient of the third sub-efficiency attenuation suppression layer falls towards the active layer is γ. The angle at which the peak of the radiative recombination coefficient of the second sub-efficiency attenuation suppression layer falls towards the n-type semiconductor is θ. The angle at which the peak of the radiative recombination coefficient of the third sub-efficiency attenuation suppression layer falls towards the n-type semiconductor is δ. Where: 10°≤α≤β≤γ≤θ≤δ≤90°.

2. The semiconductor light-emitting element according to claim 1, characterized in that, The first, second, and third sub-efficiency attenuation suppression layers all possess polarized optical phonon energy characteristics. The angle at which the peak position of the polarized optical phonon energy in the first sub-efficiency attenuation suppression layer decreases towards the active layer is σ. The angle at which the valley position of the polarized optical phonon energy in the second sub-efficiency attenuation suppression layer increases towards the active layer is φ. The angle at which the valley position of the polarized optical phonon energy in the third sub-efficiency attenuation suppression layer increases towards the active layer is ψ. The angle at which the valley position of the polarized optical phonon energy in the second sub-efficiency attenuation suppression layer increases towards the n-type semiconductor is μ. The angle at which the valley position of the polarized optical phonon energy in the third sub-efficiency attenuation suppression layer increases towards the n-type semiconductor is υ, where: 2°≤σ≤φ≤ψ≤μ≤υ≤90°.

3. The semiconductor light-emitting element according to claim 2, characterized in that, The first, second, and third sub-efficiency attenuation suppression layers all possess separation energy characteristics. The peak position of the separation energy of the first sub-efficiency attenuation suppression layer decreases towards the active layer at an angle ρ. The valley position of the separation energy of the second sub-efficiency attenuation suppression layer increases towards the active layer at an angle ω. The valley position of the separation energy of the third sub-efficiency attenuation suppression layer increases towards the active layer at an angle ε. The valley position of the separation energy of the second sub-efficiency attenuation suppression layer increases towards the n-type semiconductor at an angle η. The valley position of the separation energy of the third sub-efficiency attenuation suppression layer increases towards the n-type semiconductor at an angle κ, where: 15°≤ρ≤ω≤ε≤η≤κ≤90°.

4. The semiconductor light-emitting element according to claim 3, characterized in that, The first, second, and third sub-efficiency decay suppression layers all possess peak electron drift rate characteristics. The angle at which the valley of the peak electron drift rate of the first sub-efficiency decay suppression layer rises towards the active layer is ζ; the angle at which the peak position of the peak electron drift rate of the second sub-efficiency decay suppression layer falls towards the active layer is χ; the angle at which the peak position of the peak electron drift rate of the third sub-efficiency decay suppression layer falls towards the active layer is ν; the angle at which the peak position of the peak electron drift rate of the second sub-efficiency decay suppression layer falls towards the n-type semiconductor is π; and the angle at which the peak position of the peak electron drift rate of the third sub-efficiency decay suppression layer falls towards the n-type semiconductor is τ, where: 20°≤ζ≤χ≤ν≤π≤τ≤90°.

5. The semiconductor light-emitting element according to claim 4, characterized in that, The radiative recombination coefficient of the first sub-efficiency attenuation suppression layer, the angle at which the valley position of the peak electron drift velocity rises towards the active layer, and the angle at which the peak position of the polarized optical phonon energy and the separation energy of the first sub-efficiency attenuation suppression layer falls towards the active layer have the following relationship: 2°≤σ≤α≤ρ≤ζ≤90°. The radiative recombination coefficient of the second sub-efficiency attenuation suppression layer, the peak position of the peak electron drift velocity and the angle of decrease towards the active layer, and the angle of increase towards the active layer of the polarized optical phonon energy and the valley position of the separation energy of the second sub-efficiency attenuation suppression layer have the following relationship: 2°≤φ≤β≤ω≤χ≤90°. The radiative recombination coefficient of the third sub-efficiency attenuation suppression layer, the peak position of the peak electron drift velocity and the angle of decrease towards the active layer, and the valley position of the polarized optical phonon energy and the separation energy of the third sub-efficiency attenuation suppression layer and the angle of increase towards the active layer have the following relationship: 2°≤ψ≤γ≤ε≤ν≤90°. The radiative recombination coefficient of the second sub-efficiency attenuation suppression layer, the peak position of the peak electron drift velocity and the angle of decrease towards the n-type semiconductor, and the valley position of the polarized optical phonon energy and the separation energy of the second sub-efficiency attenuation suppression layer and the angle of increase towards the n-type semiconductor have the following relationship: 2°≤μ≤θ≤η≤π≤90°. The radiative recombination coefficient of the third sub-efficiency attenuation suppression layer, the peak position of the peak electron drift velocity and the angle of decrease towards the n-type semiconductor, and the valley position of the polarization optical phonon energy and the separation energy of the third sub-efficiency attenuation suppression layer and the angle of increase towards the n-type semiconductor have the following relationship: 2°≤υ≤δ≤κ≤τ≤90°.

6. The semiconductor light-emitting element according to claim 4 or 5, characterized in that, The angles at which the radiative recombination coefficient and peak electron drift velocity of the first sub-efficiency attenuation suppression layer rise towards the active layer, and the angles at which the peak positions of the polarized optical phonon energy and separation energy of the first sub-efficiency attenuation suppression layer fall towards the active layer; the angles at which the peak positions of the radiative recombination coefficient and peak electron drift velocity of the second sub-efficiency attenuation suppression layer fall towards the active layer, and the angles at which the trough positions of the polarized optical phonon energy and separation energy of the second sub-efficiency attenuation suppression layer rise towards the active layer; the angles at which the peak positions of the radiative recombination coefficient and peak electron drift velocity of the third sub-efficiency attenuation suppression layer fall towards the active layer, and the angles at which the trough positions of the polarized optical phonon energy and separation energy of the third sub-efficiency attenuation suppression layer fall towards the active layer. The rising angle towards the active layer, the falling angle towards the n-type semiconductor of the peak position of the radiative recombination coefficient and peak electron drift velocity of the second sub-efficiency attenuation suppression layer, the rising angle towards the n-type semiconductor of the valley position of the polarized optical phonon energy and separation energy of the second sub-efficiency attenuation suppression layer, and the falling angle towards the n-type semiconductor of the peak position of the radiative recombination coefficient and peak electron drift velocity of the third sub-efficiency attenuation suppression layer, and the rising angle towards the n-type semiconductor of the valley position of the polarized optical phonon energy and separation energy of the third sub-efficiency attenuation suppression layer have the following relationship: 2°≤σ≤α≤ρ≤ζ≤φ≤β≤ω≤χ≤ψ≤γ≤ε≤ν≤μ≤θ≤η≤π≤υ≤δ≤κ≤τ≤90°.

7. The semiconductor light-emitting element according to claim 1, characterized in that, The first sub-efficiency attenuation suppression layer is any one or any combination of GaN, AlGaN, AlInGaN, AlInN, and AlN; The second sub-efficiency attenuation suppression layer is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, and AlN; The third sub-efficiency attenuation suppression layer is any one or any combination of InGaN, AlGaN, InN, AlInN, GaN, AlInGaN, and AlN.

8. The semiconductor light-emitting element according to claim 1, characterized in that, The first sub-efficiency attenuation suppression layer has density distribution characteristics, radiative recombination coefficient distribution characteristics, polarized optical phonon energy distribution characteristics, separation energy distribution characteristics, and peak electron drift velocity distribution characteristics; The density of the first sub-efficiency attenuation suppression layer has a curve distribution of function y1=lnx+1 / x-1; The radiative recombination coefficient of the first sub-efficiency attenuation suppression layer has a first quadrant curve distribution of the function y2=x / lnx; The polarized optical phonon energy of the first phonon efficiency attenuation suppression layer has a function y3 = lnx / x curve distribution; The separation energy of the first sub-efficiency attenuation suppression layer has a function y4 = lnx / ex curve distribution; The peak electron drift velocity of the first sub-efficiency attenuation suppression layer has a first quadrant curve distribution of the function y5 = x / lnx; Where x is the depth from the first sub-efficiency attenuation suppression layer toward the second sub-efficiency attenuation suppression layer.

9. The semiconductor light-emitting element according to claim 1, characterized in that, The active layer is a quantum well structure composed of a well layer and a barrier layer; The well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the well layer thickness is from 5 angstroms to 200 angstroms. The barrier layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the barrier layer thickness is from 10 angstroms to 400 angstroms.

10. The semiconductor light-emitting element according to claim 1, characterized in that, The n-type semiconductor and p-type semiconductor include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The thickness of the n-type semiconductor is from 5 angstroms to 60,000 angstroms, and the thickness of the p-type semiconductor is from 10 angstroms to 9,000 angstroms. The substrate includes sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, and sapphire / SiO2 / SiN substrate. x Composite substrate, sapphire / SiN x / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

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