Laser radar light source device and laser radar

Abstract

The present application provides a laser radar light source device and a laser radar. A laser radar light source device includes a laser light source; and a quantum well pixel group, including a plurality of quantum well pixel chips that can be electrically controlled individually, the quantum well pixel chips have different laser refractive indices for the laser light source under different voltages or different currents, and the plurality of quantum well pixel chips are used to be arranged on the optical path of the laser light source to adjust the laser angle; each of the quantum well pixel chips includes a substrate layer, a reflector layer, a first electrode, a light-emitting layer, and a second electrode that are stacked in sequence, wherein one of the first electrode and the second electrode is a P electrode and the other is an N electrode. Among them, the quantum well pixel group includes a plurality of quantum well pixel chips that can be electrically controlled individually, the quantum well pixel chips have different laser refractive indices for the laser light source under different voltages or different currents, and the laser emission direction can be actively deflected, thereby realizing the adjustable spatial angle of the laser emission beam.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor optoelectronic devices, and in particular to a laser radar light source device and a laser radar. Background Art

[0002] Lidar is a laser-based detection, ranging, and mapping method that uses similar technology to radar. There are several main components of a lidar system: lasers, scanners and optics, photodetectors, and receiver electronics.

[0003] LiDAR is currently widely used in automotive, aircraft and machine automatic control systems. For example, autonomous vehicles use LiDAR for obstacle detection and collision avoidance to safely pass through the environment. Vehicle-mounted LiDAR is installed on the roof of an unmanned vehicle and is used to monitor and perceive the real-time dynamic environment around the car by mechanically scanning a laser beam. LiDAR sensors provide the necessary data for the software to determine the location of potential obstacles in the environment, help identify the spatial structure of obstacles, distinguish objects based on size, and estimate the impact of driving on it. One advantage of LiDAR systems over radar systems is that LiDAR systems can provide better range and a large field of view, which helps detect obstacles on curved surfaces. Although great progress has been made in LiDAR development in recent years, its laser scanning working mechanism is still based on traditional mechanical scanning, which has the problem of slow detection response speed.

[0004] Therefore, the prior art still needs to be further improved. Summary of the invention

[0005] Based on this, it is necessary to provide a laser radar light source device and a laser radar with simple control, high stability and adjustable beam spatial angle.

[0006] The specific technical solutions are as follows:

[0007] A laser radar light source device, comprising:

[0008] Laser light source; and

[0009] A quantum well pixel group, comprising a plurality of quantum well pixel chips that can be electrically controlled individually, wherein the quantum well pixel chips have different laser refractive indices for the laser light source under different voltages or different currents, and the plurality of quantum well pixel chips are used to be arranged in the optical path of the laser light source to adjust the laser angle;

[0010] Each of the quantum well pixel chips comprises a substrate layer, a reflector layer, a first electrode, a light-emitting layer, and a second electrode which are stacked in sequence, wherein one of the first electrode and the second electrode is a P electrode and the other is an N electrode.

[0011] The laser radar light source device of the present application includes a laser light source and a quantum well pixel group, wherein the quantum well pixel group includes a plurality of quantum well pixel chips that can be electrically controlled individually, and the quantum well pixel chip has different laser refractive indices for the laser light source under different voltages or different currents, so that the laser emission direction can be actively deflected, thereby achieving adjustable spatial angle of the laser emission light beam. Furthermore, each quantum well pixel chip includes a substrate layer, a reflector layer, a first electrode, a light-emitting layer and a second electrode stacked in sequence, wherein one of the first electrode and the second electrode is a P electrode and the other is an N electrode, and the quantum well pixel chips are arranged vertically and distributed according to a specific rule and integrated on the surface of the laser incident light window, and have excellent luminous intensity and conductive properties. Under the control of an external power supply, the laser emission direction can be actively deflected, thereby effectively reducing the difficulty of the formation process and facilitating improving the structural quality and manufacturing yield.

[0012] In one embodiment, the plurality of quantum well pixel chips are distributed in a multi-row and multi-column array.

[0013] In one embodiment, each of the quantum well pixel chips is ring-shaped, and the multiple quantum well pixel chips are distributed in concentric circles.

[0014] In one embodiment, the laser radar light source device also includes a prism, and the prism is arranged between the laser light source and the quantum well pixel group, so that the laser light emitted by the laser light source is reflected by the prism and then enters the quantum well pixel group.

[0015] In one embodiment, the laser light source is one of a distributed feedback laser, a quantum well laser, a GaAlAs / GaAs laser or an InGaAsP / InP laser.

[0016] In one of the embodiments, the laser radar light source device also includes a circuit control device, which is used to independently apply the same or different voltages or the same or different currents to each of the multiple quantum well pixel chips.

[0017] In one embodiment, the circuit control device is a power meter or a CMOS control circuit.

[0018] In one of the embodiments, taking the pre-start voltage or pre-start current of the quantum well pixel chip as a reference, the change in the voltage or the current is 10% to 300% of the pre-start voltage or the pre-start current.

[0019] In one embodiment, the quantum well pixel chip satisfies at least one of the conditions (1) to (4):

[0020] (1) The material of the light-emitting layer includes a III-V compound;

[0021] Further, the material of the light emitting layer is selected from AlGaInN, AlGaInP or AsGaInP;

[0022] (2) The material of the reflector layer is selected from gold, silver, and a distributed Bragg reflector;

[0023] (3) The material of the substrate layer is selected from silicon substrate and silicon nitride substrate;

[0024] (4) The materials of the first electrode and the second electrode are independently selected from one or more of ITO, conductive two-dimensional materials, Ni, Au, Ge, Cr, Pt, Al and Ti.

[0025] In one embodiment, each of the quantum well pixel chips further includes at least one of a P-type doped layer and an N-type doped layer, wherein the P-type doped layer is disposed between the P electrode and the light-emitting layer, and the N-type doped layer is disposed between the N electrode and the light-emitting layer.

[0026] In one embodiment, each of the quantum well pixel chips further includes a P-type doping layer and an N-type doping layer, the P-type doping layer is selected from one or both of InGaP and InP, and the material of the N-type doping layer is selected from GaN.

[0027] In one embodiment, each of the quantum well pixel chips further includes a passivation layer, which is coated on the sides of each film layer between the upper surface of the substrate layer and the lower surface of the second electrode, and the second electrode is also provided on the surface of the passivation layer.

[0028] In one of the embodiments, the material of the passivation layer is selected from SiO2 and Al2O3.

[0029] A laser radar comprises the laser radar light source device as described above. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic diagram of a laser radar light source device according to an embodiment of the present application;

[0031] Figure 2 This is a schematic structural diagram of a vertical structure quantum well pixel array according to an embodiment of the present application;

[0032] Figure 3 A top view of a quantum well pixel chip array in a matrix according to an embodiment of the present application;

[0033] Figure 4 A top view of a quantum well pixel chip array in a circular shape according to another embodiment of the present application.

[0034] Description of reference numerals:

[0035] 10. LiDAR light source device; 100. Laser light source; 200. Prism; 300. Quantum well pixel group; 310. Quantum well pixel chip; 311. Substrate layer; 312. Reflector layer; 313. First electrode; 314. Light-emitting layer; 315. Second electrode; 316. P-type doping layer; 317. N-type doping layer; 318. Passivation layer. DETAILED DESCRIPTION

[0036] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0037] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0038] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0039] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0040] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0041] The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementations.

[0042] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

[0043] The optional scope of the terms "and / or", "or / and", and "and / or" used in this document includes any one of two or more related listed items, and also includes any and all combinations of the related listed items, and the any and all combinations include any combination of any two related listed items, any more related listed items, or all related listed items. In this application, "first aspect", "second aspect", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or quantity, nor can they be understood as implicitly indicating the importance or quantity of the indicated technical features.

[0044] In the present application, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0045] In this application, when it comes to numerical ranges, unless otherwise specified, the above numerical ranges are deemed to be continuous and include the minimum and maximum values ​​of the range, as well as each value between such minimum and maximum values. Further, when a range refers to an integer, each integer between the minimum and maximum values ​​of the range is included. In addition, when multiple ranges are provided to describe features or characteristics, the ranges can be merged. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges included therein.

[0046] CMOS circuit is the abbreviation of Complementary Metal-Oxide-Semiconductor circuit. It is composed of insulated field effect transistors. Since it has only one type of carrier, it is a unipolar transistor integrated circuit. Its basic structure is an N-channel MOS tube and a P-channel MOS tube.

[0047] Carriers refer to charged particles that can move freely, such as electrons and ions. In semiconductors, there are two types of carriers: electrons and vacancies (holes) left on covalent bonds due to electron loss. Usually, they refer to free electrons in N-type semiconductors and holes in P-type semiconductors. They can move in a directional manner under the action of an electric field to form an electric current.

[0048] The carrier concentration is the equilibrium concentration of free electrons and free holes in semiconductor materials, and the commonly used value is the concentration value at 300K.

[0049] See also Figure 1 The present application provides a laser radar light source device 10, including a laser light source 100, a prism 200, a quantum well pixel group 300 and a circuit control device.

[0050] The laser light source 100 is used to emit laser light.

[0051] It can be understood that the above-mentioned laser light source 100 can be a laser generator or a laser.

[0052] In some of the embodiments, the laser light source 100 is one of a distributed feedback laser, a quantum well laser, a GaAlAs / GaAs laser or an InGaAsP / InP laser.

[0053] The prism 200 is used to be disposed between the laser light source 100 and the quantum well pixel group 300 , so that the laser light emitted by the laser light source 100 is reflected by the prism 200 and then enters the quantum well pixel group 300 .

[0054] The quantum well pixel group 300 includes a plurality of quantum well pixel chips 310 that can be electrically controlled individually. The quantum well pixel chips 310 have different laser refractive indices for the laser light source 100 under different voltages or different currents. The plurality of quantum well pixel chips 310 are used to be arranged in the optical path of the laser light source 100 to adjust the laser angle.

[0055] See also Figure 2 Each quantum well pixel chip 310 includes a substrate layer 311, a reflector layer 312, a first electrode 313, a light-emitting layer 314 and a second electrode 315 which are stacked in sequence, wherein one of the first electrode 313 and the second electrode 315 is a P electrode and the other is an N electrode.

[0056] The laser radar light source device of the present application includes a laser light source and a quantum well pixel group, wherein the quantum well pixel group includes a plurality of quantum well pixel chips that can be electrically controlled individually, and the quantum well pixel chip has different laser refractive indices for the laser light source under different voltages or different currents, so that the laser emission direction can be actively deflected, thereby achieving adjustable spatial angle of the laser emission light beam. Furthermore, each quantum well pixel chip includes a substrate layer, a reflector layer, a first electrode, a light-emitting layer and a second electrode stacked in sequence, wherein one of the first electrode and the second electrode is a P electrode and the other is an N electrode, and the quantum well pixel chips are arranged vertically and distributed according to a specific rule and integrated on the surface of the laser incident light window, and have excellent luminous intensity and conductive properties. Under the control of an external power supply, the laser emission direction can be actively deflected, thereby effectively reducing the difficulty of the formation process and facilitating improving the structural quality and manufacturing yield.

[0057] See also Figure 3 Specifically, the above-mentioned multiple quantum well pixel chips are distributed in a multi-row and multi-column array.

[0058] It can be understood that the above-mentioned quantum well pixel chip array is a matrix. Under different voltages or different currents, each or each column or each row of quantum well pixel chips can form different refractive indices for the laser of the laser light source to achieve active deflection of the laser emission direction, and spatial multi-angle laser reflection can be achieved in both the X and Y directions.

[0059] See also Figure 4 Specifically, each quantum well pixel chip is ring-shaped, and the above-mentioned multiple quantum well pixel chips are distributed in concentric circles.

[0060] It is understandable that different concentric quantum well pixel chips under different voltages or currents can form different refractive indices for the laser light source to achieve active deflection of the laser emission direction, so that the concentric circles can achieve multi-angle laser reflection from the outside to the inside in the entire light-emitting plane. It is understandable that in other examples, the quantum well pixel chip can also be set to other shapes.

[0061] In some of the embodiments, the quantum well pixel chip 310 may be a face-up, flip-down or vertical structure.

[0062] Furthermore, when the direction from the N electrode to the P electrode is consistent with the laser emission direction, the quantum well pixel chip is a face-up structure; when the direction from the N electrode to the P electrode is opposite to the laser emission direction, the quantum well pixel chip is a flip-down structure.

[0063] In some embodiments, the material of the light emitting layer 314 includes a group III-V compound.

[0064] Furthermore, the material of the light emitting layer 314 is selected from AlGaInN, AlGaInP or AsGaInP.

[0065] In some embodiments, the light emitting layer 314 has a thickness of 100 nm to 200 nm.

[0066] It should be noted that the thickness of the light emitting layer 314 has a value range of "100 nm to 200 nm", which means that the minimum and maximum values ​​in the range of 100 nm to 200 nm, and every value between the minimum and maximum values. Specific examples include, but are not limited to, the point values ​​in the embodiment and the following point values: 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm or 200 nm; or a range consisting of any two of these values, including, as an example, 100 nm to 150 nm.

[0067] In a specific example, the thickness of the light emitting layer 314 is 100 nm.

[0068] It is understood that the light emitting layer 314 can be excited by electric current to generate light.

[0069] In some embodiments, the material of the reflector layer 312 is selected from gold, silver, and a distributed Bragg reflector.

[0070] In some embodiments, the thickness of the reflector layer 312 is 1 μm-2 μm.

[0071] The thickness of the reflector layer 312 has a value range of "1 μm to 2 μm", that is, the minimum and maximum values ​​in the range of 1 μm to 2 μm, and each value between the minimum and maximum values. Specific examples include, but are not limited to, the point values ​​in the embodiment and the following point values: 1 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μm or 2 μm; or a range consisting of any two of these values, including, as an example, 1 μm to 1.5 μm.

[0072] In a specific example, the thickness of the reflector layer 312 is 1 μm.

[0073] It can be understood that the reflector layer 312 is helpful to reduce the loss of light intensity of the light-emitting layer 314 and to enhance the light-emitting intensity.

[0074] In some embodiments, the material of the substrate layer 311 is selected from a silicon substrate and a silicon nitride substrate.

[0075] In some embodiments, the substrate layer 311 has a thickness of 100 μm-1000 μm.

[0076] The thickness of the substrate layer 311 may range from 100 μm to 1000 μm, i.e., may take a minimum value and a maximum value within the range of 100 μm to 1000 μm, as well as any value between the minimum value and the maximum value. Specific examples include, but are not limited to, the point values ​​in the embodiments and the following point values: 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm, 190 μm, 200 μm, 210 μm, 220 μm, 230 μm, 240 μm, 250 μm, 260 μm, 270 μm, 280 μm, 290 μm, 300 μm, 310 μm, 320 μm, 330 μm, 340 μm, 350 μm, 360 μm, 370 μm, 380 μm, 390 μm, 400 μm, 410 μm, 420 μm, 430 μm, 440 μm 0μm, 320μm, 330μm, 340μm, 350μm, 360μm, 370μm, 380μm, 390μm, 400μm, 410μm, 420μm, 430μm, 440μm, 450μm, 460μm, 470μm, 480μm, 490μm, 500μm, 510μm, 520μm, 530μm, 540μm, 550μm, 560μm m, 570μm, 580μm, 590μm, 600μm, 610μm, 620μm, 630μm, 640μm, 650μm, 660μm, 670μm, 680μm, 69 0μm, 700μm, 710μm, 720μm, 730μm, 740μm, 750μm, 760μm, 770μm, 780μm, 790μm, 800μm, 810μm, 820μm, 830μm, 840μm, 850μm, 860μm, 870μm, 880μm, 890μm, 900μm, 910μm, 920μm, 930μm, 940μm, 950μm, 960μm, 970μm, 980μm, 990μm or 1000μm; or a range consisting of any two of these values, including, as examples, 100μm~500μm.

[0077] In a specific example, the thickness of the substrate layer 311 is 100 μm.

[0078] It can be understood that the quantum well pixel chip 310 is formed into a plurality of arrays through an etching process, and the substrate layer 311 can provide a process operation platform.

[0079] In some of the embodiments, the materials of the first electrode 313 and the second electrode 315 are independently selected from one or more of ITO, conductive two-dimensional materials, Ni, Au, Ge, Cr, Pt, Al and Ti.

[0080] Furthermore, the above-mentioned conductive two-dimensional material includes graphene.

[0081] In some of these embodiments, please continue to see Figure 2 Each quantum well pixel chip 310 also includes at least one of a P-type doping layer 316 and an N-type doping layer 317 , wherein the P-type doping layer 316 is disposed between the P-electrode and the light-emitting layer 314 , and the N-type doping layer 317 is disposed between the N-electrode and the light-emitting layer 314 .

[0082] The P-type doped layer 316 is filled between the light-emitting layer 314 and the P-electrode, and the P-type doped layer 316 can fill the space and guide the current; the N-type doped layer 317 is filled between the above-mentioned light-emitting layer 314 and the N-electrode, and guides the current transmission between the light-emitting layer 314 and the N-electrode.

[0083] In some of these embodiments, please continue to see Figure 2 Each quantum well pixel chip 310 further includes a P-type doping layer 316 and an N-type doping layer 317 . The P-type doping layer 316 is selected from one or both of InGaP and InP, and the material of the N-type doping layer 317 is selected from GaN.

[0084] In some of the embodiments, each quantum well pixel chip 310 further includes a passivation layer 318 , which covers the sides of each film layer between the upper surface of the substrate layer 311 and the lower surface of the second electrode 315 , and the surface of the passivation layer 318 is also provided with the above-mentioned second electrode 315 .

[0085] Furthermore, the second electrode 315 covers the uppermost layer of the passivation layer 318 and contacts the substrate layer 311 .

[0086] In some embodiments, the material of the passivation layer 318 is selected from SiO 2 and Al 2 O 3 .

[0087] In some of the embodiments, the laser radar light source device 10 further includes a circuit control device, which is used to independently apply the same or different voltages or the same or different currents to each of the multiple quantum well pixel chips 310 .

[0088] In some embodiments, the circuit control device is a power meter or a CMOS control circuit.

[0089] It can be understood that the light emitting layer 314 is connected to an external circuit through the P-type doping layer 316 and the N-type doping layer 317 , the first electrode 313 and the second electrode 315 .

[0090] In some of the embodiments, taking the pre-start voltage or pre-start current of the quantum well pixel chip 310 as a reference, the variation of the voltage or the current is 10% to 300% of the pre-start voltage or the pre-start current.

[0091] It should be noted that the change in the above voltage or the above current is 10% to 300% of the above pre-start voltage or the above pre-start current, that is, the minimum and maximum values ​​in the range of 10% to 300% and each value between the minimum and maximum values ​​can be taken. Specific examples include, but are not limited to, the point values ​​in the embodiments and the following point values: 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, 100%, 110%, 120%, 130%, 140%, 150%, 160%, 170%, 180%, 190%, 200%, 210%, 220%, 230%, 240%, 250%, 260%, 270%, 280%, 290% or 300%. Or a range consisting of any two of these values, as an example, includes 50% to 200%.

[0092] In some embodiments, the voltage of the quantum well pixel chip 310 is inversely proportional to the refractive index of the laser.

[0093] It can be understood that under the control of CMOS, the quantum well pixel group 300 can realize different voltage values ​​loaded on each quantum well pixel chip 310 of the chip array, and thus different carrier concentrations inside each quantum well pixel chip 310, so that there is a certain difference in the refractive index of each quantum well pixel chip 310 for the same laser; and the higher the external voltage, the higher the carrier concentration inside the quantum well pixel chip 310, the lower the refractive index of the quantum well pixel chip 310, and the smaller the reflected laser emission angle; therefore, the adjustable angle of the laser radar light source device 10 is achieved by controlling the size of the external voltage of the quantum well pixel chip 310.

[0094] Another embodiment of the present application also provides a laser radar, including the above-mentioned laser radar light source device.

[0095] The above-mentioned laser radar of the present application is used in the fields of detection, scanning, etc., has broader application prospects in the field of optoelectronic integration, and is more energy-efficient and conducive to mass production.

[0096] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0097] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims, and the description and drawings can be used to interpret the content of the claims.

Claims

1. A laser radar light source device, characterized in that: include: Laser light source; and A quantum well pixel group, comprising a plurality of quantum well pixel chips that can be electrically controlled individually, wherein the quantum well pixel chips have different laser refractive indices for the laser light source under different voltages or different currents, and the plurality of quantum well pixel chips are used to be arranged in the optical path of the laser light source to adjust the laser angle; Each of the quantum well pixel chips comprises a substrate layer, a reflector layer, a first electrode, a light-emitting layer and a second electrode which are stacked in sequence, wherein one of the first electrode and the second electrode is a P electrode and the other is an N electrode; the thickness of the reflector layer is 1 μm to 2 μm; the thickness of the substrate layer is 100 μm to 1000 μm; Each of the quantum well pixel chips further comprises at least one of a P-type doped layer and an N-type doped layer; the P-type doped layer is arranged between the P electrode and the light-emitting layer, and the N-type doped layer is arranged between the N electrode and the light-emitting layer; Each of the quantum well pixel chips further comprises a passivation layer, which is coated on the side of each film layer between the upper surface of the substrate layer and the lower surface of the second electrode, and the second electrode is also disposed on the surface of the passivation layer; The laser radar light source device further includes a circuit control device, which is used to independently apply the same or different voltages or the same or different currents to each of the multiple quantum well pixel chips; Taking the pre-start voltage or pre-start current of the quantum well pixel chip as a reference, the change of the voltage or the current is 10% to 300% of the pre-start voltage or the pre-start current; The laser radar light source device also includes a prism, which is arranged between the laser light source and the quantum well pixel group, so that the laser light emitted by the laser light source can enter the quantum well pixel group again after being reflected by the prism.

2. The laser radar light source device according to claim 1, characterized in that: The multiple quantum well pixel chips are distributed in a multi-row and multi-column array.

3. The laser radar light source device according to claim 1, characterized in that: Each of the quantum well pixel chips is in the shape of a ring, and the multiple quantum well pixel chips are distributed in concentric circles.

4. The laser radar light source device according to any one of claims 1 to 3, characterized in that: The laser light source is one of a distributed feedback laser, a quantum well laser, a GaAlAs / GaAs laser or an InGaAsP / InP laser.

5. The laser radar light source device according to any one of claims 1 to 3, characterized in that: The thickness of the light-emitting layer is 100 nm.

6. The laser radar light source device according to claim 5, characterized in that: The circuit control device is a power meter or a CMOS control circuit.

7. The laser radar light source device according to any one of claims 1 to 3, characterized in that: The quantum well pixel chip satisfies at least one of the conditions (1) to (4): (1) The material of the light-emitting layer includes a III-V compound; (2) The material of the reflector layer is selected from gold, silver, and a distributed Bragg reflector; (3) The material of the substrate layer is selected from silicon substrate and silicon nitride substrate; (4) The materials of the first electrode and the second electrode are independently selected from one or more of ITO, conductive two-dimensional materials, Ni, Au, Ge, Cr, Pt, Al and Ti.

8. The laser radar light source device according to claim 7, characterized in that: The material of the light emitting layer is selected from AlGaInN, AlGaInP or AsGaInP.

9. The laser radar light source device according to any one of claims 1 to 3, characterized in that: Each of the quantum well pixel chips further includes a P-type doping layer and an N-type doping layer, wherein the P-type doping layer is selected from one or both of InGaP and InP, and the material of the N-type doping layer is selected from GaN.

10. The laser radar light source device according to any one of claims 1 to 3, characterized in that: The material of the passivation layer is selected from SiO2 and Al2O3.

11. A laser radar, characterized in that: It comprises a laser radar light source device as described in any one of claims 1 to 10.

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