Processing apparatus and method of use thereof

Abstract

The application relates to the technical field of semiconductor processing equipment, and particularly discloses a processing equipment and a use method thereof, which comprises a workbench, a cooling circulation channel, a vacuum adsorption channel and a mixing channel are arranged on the workbench respectively, the mixing channel is used for vacuumizing, purging or conveying cleaning medium on the holes of a porous ceramic disc, so as to meet the processing requirement of the processing equipment on a wafer. The cooling medium in the cooling circulation channel cools the disc holder and the porous ceramic disc, so that the thermal deformation in the processing process is avoided, and the processing precision is ensured. The bottom disc is vacuum adsorbed through the vacuum adsorption channel, so that the gap between the bottom disc and the base disc is ensured not to be generated in the processing process, and the silicon powder accumulation is avoided to reduce the final wafer yield.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing equipment technology, and in particular to a processing device and its method of use. Background Technology

[0002] The semiconductor industry manufactures semiconductor chips by fabricating large-scale integrated circuits on the surface of semiconductor wafers. To thin the chips, robotic arms are typically used to place the wafers onto processing equipment, where they are ground to a specified thickness. In existing technology, the processing equipment includes a worktable on which the wafer is placed. The worktable consists of two parts: from top to bottom, a porous ceramic element for holding the wafer in place and a concave disk for supporting the porous ceramic element. A significant amount of heat is generated during wafer grinding, and the worktable's heat dissipation efficiency is lower than that of the heat generated during processing. When processing a certain number of wafers continuously, excessive heat accumulation causes deformation of the worktable, leading to a decrease in wafer precision. This necessitates stopping the machine to dissipate heat and maintain the final wafer precision. In addition, during the wafer cleaning process after processing, the cleaning medium has a certain pressure. Because the outer ring of the worktable is bolted to the outer ring of the base, there is a significant tightening force. Since no connecting parts can be used to fix the center of the worktable to the center of the base, there is almost no tightening force. Under pressure, a tiny gap appears where the center of the worktable contacts the center of the base. This gap disappears after the cleaning process. However, during the process from the formation of this tiny gap to its disappearance, some silicon powder and fine debris generated during grinding fall into the gap. As the number of processing cycles increases, the amount of silicon powder and fine debris accumulated in the gap gradually increases, and the parallelism between the worktable and the base gradually deteriorates, ultimately leading to a decrease in the yield of the processed wafers. Summary of the Invention

[0003] The purpose of this invention is to provide a processing device and its method of use, so as to solve the problems of overheating and deformation caused by existing processing devices and the gap between the worktable and the base during processing.

[0004] This invention provides a processing device for processing wafers, including a grinding module for grinding wafers, and a worktable for supporting the wafers. The worktable includes a porous ceramic disk, a support disk, an intermediate disk, a bottom disk, and a base disk, which are connected sequentially from top to bottom, and the porous ceramic disk, support disk, and intermediate disk are sealed together from top to bottom edges. The worktable also includes:

[0005] The cooling circulation channel, which passes through at least the bottom plate and the middle plate, is used to deliver the cooling medium to the middle plate. The cooling medium is used to cool the support plate and the porous ceramic plate.

[0006] A vacuum adsorption channel is provided on the base plate to perform vacuum adsorption on the bottom plate;

[0007] The mixing channel passes sequentially through the base plate, bottom plate, middle plate, support plate and porous ceramic plate, and is used to evacuate, purge or transport cleaning media to the holes on the porous ceramic plate.

[0008] A circulating pump is used to pump cooling medium into the cooling circulation channel.

[0009] As a preferred technical solution for processing equipment, it also includes a radiator and a water tank. The inlet of the circulating pump is connected to the water tank, which is used to store the cooling medium. The cooling circulation channel is connected to the inlet of the radiator, and the outlet of the radiator is connected to the water tank.

[0010] As a preferred technical solution for processing equipment, the intermediate plate is provided with a connected intermediate cooling inlet and cooling medium flow channel, and the bottom plate is provided with a bottom cooling inlet and a bottom cooling outlet. The bottom cooling inlet, intermediate cooling inlet, cooling medium flow channel and bottom cooling outlet are connected in sequence to form a cooling circulation channel.

[0011] As a preferred technical solution for processing equipment, the cooling circulation channel passes through the base plate, bottom plate and middle plate in sequence.

[0012] As a preferred technical solution for processing equipment, the intermediate plate is provided with a connected intermediate cooling inlet and cooling medium flow channel, the bottom plate is provided with a bottom cooling inlet and a bottom cooling outlet, and the base plate is provided with a base cooling through hole. The base cooling through hole, bottom cooling inlet, intermediate cooling inlet, cooling medium flow channel and bottom cooling outlet are connected in sequence to form a cooling circulation channel.

[0013] As a preferred technical solution for processing equipment, the vacuum adsorption channel includes a first vacuum supply channel, a second vacuum supply channel and a vacuum diffusion channel. The lower surface of the base plate is provided with the independent first vacuum supply channel and second vacuum supply channel, and the upper surface of the base plate is provided with the vacuum diffusion channel, which is used to perform vacuum adsorption on the bottom plate.

[0014] As a preferred technical solution for processing equipment, the vacuum diffusion channel includes a first vacuum diffusion channel and a second vacuum diffusion channel. The second vacuum diffusion channel is located outside the first vacuum diffusion channel. The first vacuum supply channel is connected to the first vacuum diffusion channel through the first vacuum inlet of the base. The second vacuum supply channel is connected to the first vacuum diffusion channel through the second vacuum hole of the base. The second vacuum supply channel is connected to the second vacuum diffusion channel through the third vacuum hole of the base.

[0015] As a preferred technical solution for the processing equipment, two first sealing rings are provided between the bottom plate and the base plate, one of which is located inside the first vacuum diffusion channel and the other is located outside the second vacuum diffusion channel.

[0016] This invention provides a method of using a processing equipment, wherein the processing equipment applied to any of the above-described schemes processes wafers, and the method of using the processing equipment includes:

[0017] The bottom plate is vacuum-adsorbed onto the base plate through a vacuum adsorption channel;

[0018] Turn on the circulation pump to cool the bearing plate and porous ceramic disc through the cooling circulation channel;

[0019] The wafer is placed on a porous ceramic disk, and the holes on the porous ceramic disk are evacuated through a mixing channel.

[0020] The wafer is ground using a grinding module.

[0021] As a preferred technical solution for using the processing equipment, after grinding the wafer, it also includes:

[0022] The cleaning medium is delivered to the pores on the porous ceramic disc through a mixing channel;

[0023] The holes on the porous ceramic disk are purged through a mixing channel;

[0024] Remove the processed wafer.

[0025] The beneficial effects of this invention are as follows:

[0026] This invention provides a processing apparatus with a cooling circulation channel and a mixing channel respectively arranged on the worktable. The mixing channel is used for vacuuming, purging, or conveying cleaning media to the holes on the porous ceramic disk to meet the processing requirements of the wafer processing apparatus. The cooling medium in the cooling circulation channel cools the support plate and the porous ceramic disk, and a circulation pump is set to continuously cool the support plate and the porous ceramic disk, avoiding thermal deformation during processing and ensuring processing accuracy. The vacuum adsorption channel performs vacuum adsorption on the bottom plate, ensuring that no gap is formed between the bottom plate and the base plate during processing, avoiding silicon powder accumulation that would reduce the final wafer yield.

[0027] This invention provides a method for using a processing equipment. This method allows for wafer processing, where heat generated during processing is promptly dissipated by a cooling medium, preventing thermal deformation that could affect processing accuracy or continuity. Simultaneously, before processing, the bottom plate is vacuum-adsorbed onto the base plate to prevent silicon powder accumulation in the gap between the two during processing, which could lead to poor parallelism and affect the yield of the processed wafer. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the structure of the workbench in an embodiment of the present invention;

[0029] Figure 2 This is a schematic diagram of the arrangement of various channels on the base plate in an embodiment of the present invention;

[0030] Figure 3 This is a schematic diagram of the base plate structure in an embodiment of the present invention;

[0031] Figure 4 This is a planar schematic diagram of the bottom of the base plate in an embodiment of the present invention;

[0032] Figure 5 This is a plan view of the bottom plate in an embodiment of the present invention;

[0033] Figure 6 This is a plan view of the intermediate disk in an embodiment of the present invention;

[0034] Figure 7 This is a schematic diagram of the cooling medium flow path in an embodiment of the present invention;

[0035] Figure 8 This is a flowchart illustrating the method of using the processing equipment in an embodiment of the present invention.

[0036] In the picture:

[0037] 1. Porous ceramic disc;

[0038] 2. Placing;

[0039] 3. Intermediate plate; 31. Intermediate cooling inlet; 32. Cooling medium flow channel; 321. Intermediate cooling outlet; 33. Intermediate mixing through hole; 34. Intermediate connecting hole;

[0040] 4. Bottom plate; 41. Bottom cooling inlet; 42. Bottom mixing hole; 43. Bottom mixing tank; 44. Bottom cooling outlet; 45. Bottom drain outlet;

[0041] 5. Base plate; 510. Mixing supply channel; 511. Base mixing inlet; 512. Base mixing hole; 520. First vacuum supply channel; 521. Base first vacuum inlet; 522. Base first vacuum hole; 530. Second vacuum supply channel; 531. Base second vacuum hole; 532. Base third vacuum hole; 540. Mixing diffusion channel; 550. First vacuum diffusion channel; 560. Second vacuum diffusion channel; 570. Third vacuum diffusion channel; 580. Base cooling through hole. Detailed Implementation

[0042] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0043] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The terms "first position" and "second position" refer to two different positions. Furthermore, "above," "on top of," and "over" the first feature in relation to the second feature includes the first feature directly above and diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "under," and "below" the first feature in relation to the second feature includes the first feature directly below and diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0044] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0045] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0046] The semiconductor industry manufactures semiconductor chips by fabricating large-scale integrated circuits on the surface of semiconductor wafers. To thin the chips, robotic arms are typically used to place the wafers onto processing equipment, where they are ground to a specified thickness. In existing technology, the processing equipment includes a worktable on which the wafer is placed. The worktable consists of two parts: from top to bottom, a porous ceramic element for holding the wafer in place and a concave disk for supporting the porous ceramic element. A significant amount of heat is generated during wafer grinding, and the worktable's heat dissipation efficiency is lower than that of the heat generated during processing. When processing a certain number of wafers continuously, excessive heat accumulation causes deformation of the worktable, leading to a decrease in wafer precision. This necessitates stopping the machine to dissipate heat and maintain the final wafer precision. In addition, during the wafer cleaning process after processing, the cleaning medium has a certain pressure. Because the outer ring of the worktable is bolted to the outer ring of the base, there is a significant tightening force. Since no connecting parts can be used to fix the center of the worktable to the center of the base, there is almost no tightening force. Under pressure, a tiny gap appears where the center of the worktable contacts the center of the base. This gap disappears after the cleaning process. However, during the process from the formation of this tiny gap to its disappearance, some silicon powder and fine debris generated during grinding fall into the gap. As the number of processing cycles increases, the amount of silicon powder and fine debris accumulated in the gap gradually increases, and the parallelism between the worktable and the base gradually deteriorates, ultimately leading to a decrease in the yield of the processed wafers.

[0047] To address this, this embodiment provides a processing device that uses a cooling circulation channel on the worktable to dissipate heat and prevent worktable deformation that could reduce processing accuracy. Additionally, a vacuum adsorption channel is provided on the worktable to ensure no gaps are generated during processing, thereby guaranteeing processing accuracy and yield while increasing production capacity.

[0048] like Figures 1-7As shown, the present invention provides a processing apparatus for processing wafers. The processing apparatus includes a grinding module for grinding the wafers and a worktable for supporting the wafers. The worktable includes a porous ceramic disk 1, a support disk 2, an intermediate disk 3, a bottom disk 4, and a base disk 5, which are connected sequentially from top to bottom. The porous ceramic disk 1, support disk 2, and intermediate disk 3 are sealed together from top to bottom edges. The intermediate disk 3 is connected to the bottom disk 4 via a central connecting hole 34. A cooling circulation channel, a vacuum adsorption channel, and a mixing channel are provided on the worktable. The cooling circulation channel passes through at least the bottom disk 4 and the intermediate disk 3 and extends on the intermediate disk 3, for supplying a cooling medium to the intermediate disk 3. The cooling medium is used to cool the support disk 2 and the porous ceramic disk 1. The vacuum adsorption channel passes through the base disk 5 and extends on the base disk 5 to perform vacuum adsorption on the bottom disk 4. The mixing channel sequentially passes through the base plate 5, bottom plate 4, intermediate plate 3, support plate 2, and porous ceramic plate 1. It is used for vacuuming, purging, or conveying cleaning media to the holes in the porous ceramic plate 1 to meet the processing requirements of the wafer fabrication equipment. The cooling medium in the cooling circulation channel cools the support plate 2 and porous ceramic plate 1, preventing thermal deformation during processing and ensuring processing accuracy. The vacuum adsorption channel performs vacuum adsorption on the bottom plate 4, ensuring no gaps form between the bottom plate 4 and the base plate 5 during processing, preventing silicon powder accumulation that could reduce the final wafer yield.

[0049] Furthermore, such as Figures 1-7 As shown, the intermediate disk 3 is provided with a connected intermediate cooling inlet 31 and a cooling medium flow channel 32, the cooling medium flow channel 32 being curved and extended on the intermediate disk 3. See details... Figure 6 As shown, the cooling medium flow channel 32 is disposed on the upper surface of the intermediate disk 3, and its length is greater than the radius of the intermediate disk 3, preferably in a serpentine shape. Multiple cooling medium flow channels 32 are provided, evenly distributed along the circumference of the intermediate disk 3, and the areas of the multiple cooling medium flow channels 32 near the center of the intermediate disk 3 are interconnected. The cooling inlet is disposed in the area where the multiple cooling medium flow channels 32 are interconnected in the middle of the intermediate disk 3, so that the cooling medium enters each cooling medium flow channel 32 from the cooling inlet and diffuses within the cooling medium flow channel 32, cooling the support plate 2 and the porous ceramic disk 1 above the intermediate disk 3. The flow path of the cooling medium within the cooling medium flow channel 32 is shown in [reference needed]. Figure 6 The path S3 is shown in the diagram. In this embodiment, the cooling medium is antifreeze or cooling water. Please refer to... Figure 5 As shown, and in combination Figure 6A bottom cooling inlet 41 and a bottom cooling outlet 44 are provided on the bottom plate 4. The bottom cooling inlet 41, the intermediate cooling inlet 31, the cooling medium flow channel 32, and the bottom cooling outlet 44 are connected in sequence to form a cooling circulation channel. The intermediate cooling inlet 31 is aligned with the bottom cooling inlet 41, so that the cooling medium can enter the cooling medium flow channel 32 through the bottom cooling inlet 41 and the intermediate cooling inlet 31. At the end of the cooling medium flow channel 32, that is, at the point where the cooling medium flow channel 32 is far from the cooling inlet, an intermediate cooling outlet 321 is provided. The intermediate cooling outlet 321 is aligned with the bottom cooling outlet 44, so that the cooling medium flow channel 32 is connected to the bottom cooling outlet 44 through the intermediate cooling outlet 321, realizing the circulation of the cooling medium and continuously cooling the support plate 2 and the porous ceramic plate 1.

[0050] Specifically, such as Figures 2-5 As shown, the cooling circulation channel passes sequentially through the base plate 5, the bottom plate 4, and the intermediate plate 3. The cooling circulation channel also includes a base cooling through-hole 580 on the base plate 5. The bottom cooling inlet 41 is aligned and connected to the base cooling through-hole 580, and the cooling medium enters the bottom cooling inlet 41 through the base cooling through-hole 580. Please refer to... Figure 5 As shown, a bottom drain outlet 45 is provided on the outer wall of the bottom plate 4, and the bottom drain outlet 45 is connected to the bottom cooling outlet 44. In this embodiment, the cooling medium flow channel 32 is configured as multiple, that is, multiple intermediate cooling outlets 321 are configured. Correspondingly, the number and position of the bottom cooling outlet 44 and the bottom drain outlet 45 correspond to the number and position of the multiple intermediate cooling outlets 321. Please refer to... Figure 7 As shown by the dashed line B, this line represents the path of the cooling medium into the intermediate plate 3. Specifically, the cooling medium enters the bottom cooling inlet 41 from the base cooling through-hole 580, and then enters the intermediate cooling inlet 31 from the bottom cooling inlet 41. It then diffuses within the cooling medium flow channel 32 for cooling. Please refer to... Figure 7 As shown by the dashed line A, the dashed line A represents the path of the cooling medium discharged from the intermediate plate 3. Specifically, it enters the bottom cooling outlet 44 through the intermediate cooling outlet 321 and finally exits from the bottom drain outlet 45. Please refer to the diagram for the flow path of the cooling medium discharged on the bottom plate 4. Figure 5 As shown in path S2, the base cooling through hole 580, bottom cooling inlet 41, middle cooling inlet 31, cooling medium flow channel 32, bottom cooling outlet 44 and bottom drain 45 are connected in sequence to form a cooling circulation channel.

[0051] The circulation of the cooling medium is achieved through the following structure: a circulation pump is installed at the base plate 5, with its outlet connected to the base cooling through-hole 580 and its inlet connected to the bottom drain outlet 45 of the bottom plate 4. The circulation pump continuously pumps cooling medium to the bottom cooling inlet 41 to cool the support plate 2 and the porous ceramic plate 1. The cooled medium, after its temperature rises, cools further as it returns to the circulation pump inlet through the bottom drain outlet 45, thus achieving continuous cooling of the support plate 2 and the porous ceramic plate 1. To further enhance the cooling effect, in other embodiments, a water tank and a radiator can also be additionally installed. The water tank stores the cooling medium, with the circulation pump inlet connected to the water tank, the bottom drain outlet 45 of the bottom plate 4 connected to the radiator inlet, and the radiator outlet connected to the water tank. By installing the radiator and water tank, the heat dissipation effect of the cooling medium is further improved, resulting in a lower temperature of the circulating medium pumped to the circulating medium diffusion channel, thus improving the heat dissipation effect on the support plate 2 and the porous ceramic plate 1.

[0052] Furthermore, such as Figures 1-4As shown, the vacuum adsorption channel includes a first vacuum supply channel 520, a second vacuum supply channel 530, and a vacuum diffusion channel. The first vacuum supply channel 520 and the second vacuum supply channel 530 are radially extended on the lower surface of the base disk 5. A vacuum diffusion channel is provided on the upper surface of the base disk 5, used for vacuum adsorption of the bottom disk 4. The vacuum diffusion channel includes a first vacuum diffusion channel 550, a second vacuum diffusion channel 560, and a third vacuum diffusion channel 570. The second vacuum diffusion channel 560 is located outside the first vacuum diffusion channel 550, and the third vacuum diffusion channel 570 is located outside the second vacuum diffusion channel 560. The first vacuum diffusion channel 550 is configured as a recessed annular structure. The first vacuum supply channel 520 communicates with the first vacuum diffusion channel 550 through a first vacuum inlet 521 in the base, and the second vacuum supply channel 530 communicates with the first vacuum diffusion channel 550 through a second vacuum hole 531 in the base. Both the first vacuum supply channel 520 and the second vacuum supply channel 530 are connected to external vacuum equipment. The first vacuum diffusion channel 550 is used for vacuum adsorption of the bottom plate 4. The second vacuum diffusion channel and the third vacuum diffusion channel 570 are also designed as recessed annular structures, and the first vacuum diffusion channel 550, the second vacuum diffusion channel 560, and the third vacuum diffusion channel 570 are coaxial. The second vacuum diffusion channel 560 is located outside the first vacuum diffusion channel 550, and the third vacuum diffusion channel 570 is located outside the second vacuum diffusion channel 560. The second vacuum supply channel 530 is connected to the second vacuum diffusion channel 560 through the third vacuum hole 532 in the base, and the third vacuum diffusion channel 570 is connected to the second vacuum diffusion channel 560 through a keyway on the base plate 5. Both the second vacuum diffusion channel 560 and the third vacuum diffusion channel 570 are used for vacuum adsorption of the bottom plate 4. After the bottom plate 4 is fixedly connected to the base plate 5, the bottom wall of the bottom plate 4 forms a sealed cavity with the first vacuum diffusion channel 550, the second vacuum diffusion channel 560 and the third vacuum diffusion channel 570 respectively. At this time, the first vacuum diffusion channel 550, the second vacuum diffusion channel 560 and the third vacuum diffusion channel 570 are simultaneously evacuated, and the bottom plate 4 is adsorbed onto the base plate 5. During the processing, gaps are avoided between the bottom plate 4 and the base plate 5, thereby ensuring the yield of the processed wafers.

[0053] To further improve the adhesion between the base plate 5 and the bottom plate 4, please continue to refer to... Figures 1-4 As shown, a first vacuum hole 522 is also provided on the base plate 5. The first vacuum hole 522 is connected to the first vacuum supply channel 520. The first vacuum hole 522 is located between the first vacuum diffusion channel 550 and the second diffusion channel. After the bottom plate 4 is fixedly connected to the base plate 5, the first vacuum hole 522 directly adsorbs onto the bottom wall of the bottom plate 4, thereby further enhancing the local vacuum adsorption effect.

[0054] Optionally, to ensure good airtightness between the bottom plate 4 and the base plate 5 during vacuum adsorption, two first sealing rings are provided between the bottom plate 4 and the base plate 5. One first sealing ring is located inside the first vacuum diffusion channel 550, and the other first sealing ring is located outside the third vacuum diffusion channel 570. The sealing ring located inside the first vacuum diffusion channel 550 does not interfere with the base cooling through hole 580 and the bottom cooling inlet 41 after the bottom plate 4 and the base plate 5 are installed, thus avoiding affecting the flow of the cooling medium in the cooling circulation channel. Furthermore, mounting slots or grooves for the first sealing rings are provided at corresponding positions on the bottom plate 4 or the base plate 5; the specific structure is not limited here.

[0055] Furthermore, please refer to Figures 1-6 As shown, the mixing channel includes through holes on the support plate 2, intermediate mixing through holes 33 on the intermediate plate 3, bottom mixing grooves on the bottom plate 4, and mixing diffusion channels on the base plate 5. The support plate 2 has multiple through holes for communicating with the porous ceramic disc 1, and the intermediate plate 3 has multiple intermediate mixing through holes 33 for communicating with the through holes on the support plate 2. These intermediate mixing through holes 33 are positioned to avoid interference with the cooling circulation channels on the worktable. Raised portions are formed between the cooling medium flow channels 32 on the intermediate plate 3, and the multiple intermediate mixing through holes 33 are arranged on these raised portions to prevent interference between the mixing channel and the cooling circulation channel. Please refer to... Figure 5 As shown, a curved and extended bottom mixing groove 43 is provided on the bottom plate 4, and multiple intermediate mixing through holes 33 are connected to the bottom mixing groove 43. The bottom mixing groove 43 is not connected to the bottom cooling inlet 41 and the bottom cooling outlet 44 to avoid mutual interference between the mixing channel and the cooling circulation channel. Please refer to... Figures 2-4As shown, two interconnected mixing supply channels 510 are provided at the bottom of the base disk 5. A base mixing inlet 511 is provided at the connection position of the two mixing supply channels 510. The base disk 5 is provided with an interconnected base mixing hole 512 and a mixing diffusion channel 540. The mixing diffusion channel 540 is connected to the mixing supply channel 510 through the base mixing hole 512. The bottom mixing groove 43 is connected to the mixing diffusion channel 540 through the bottom mixing hole 42. The base mixing hole 512 is used for evacuating, purging or conveying cleaning medium to the mixing diffusion channel 540. The mixing diffusion channel 540 is set as a recessed annular structure and is located inside the first vacuum diffusion channel 550. The corresponding sealing ring provided inside the first vacuum diffusion channel 550 is located on the protrusion formed between the mixing diffusion channel 540 and the first vacuum diffusion channel 550, thereby avoiding interference between the vacuum adsorption channel and the mixing channel. A circular protrusion is formed inside the mixing diffusion channel 540, and the base cooling through hole 580 is set on the circular protrusion. In order to avoid interference between the mixing channel and the cooling circulation channel, a sealing ring is also set inside the mixing diffusion channel 540, and an avoidance hole is set on the sealing ring at the position corresponding to the base cooling through hole 580. While achieving sealing, it ensures that the coolant can pass smoothly through the base cooling through hole 580, avoiding affecting the cooling circulation channel.

[0056] Specifically, please refer to Figure 5 As shown, the bottom mixing tank 43 includes an inner annular groove, an outer annular groove, and a bent groove for connecting the inner and outer annular grooves. The bent groove extends radially along the bottom plate 4, with its two ends communicating with the inner and outer annular grooves respectively. On the bottom plate 4, a circular protrusion is formed on the inner side of the inner annular groove, and the bottom cooling inlet 41 is located on the circular protrusion; a circular annular protrusion is formed on the outer side of the outer annular groove, and the bottom cooling outlet 44 is located on the circular annular protrusion, thereby preventing interference between the mixing channel and the cooling circulation channel on the bottom plate 4.

[0057] Optionally, to ensure the airtightness between the mixing channel and the cooling circulation channel, two second sealing rings are provided between the bottom plate 4 and the middle plate 3. One of the second sealing rings is located outside the outer ring groove and inside the bottom cooling outlet 44, and the other second sealing ring is located inside the inner ring groove and is provided with a clearance hole for avoiding the bottom cooling inlet 41 of the cooling circulation channel.

[0058] For example, a negative pressure machine, a compressed air source, and a cleaning fluid pump can be selectively connected to the base mixing inlet 511 to achieve vacuuming, purging, or delivery of cleaning media to the porous ceramic disk 1. Taking the connection of the base mixing inlet 511 to a negative pressure machine as an example, negative pressure enters the mixing supply channel 510 through the base mixing inlet 511, enters the mixing diffusion channel 540 through the base mixing hole 512, enters the bottom mixing tank 43 through the bottom mixing hole 42 of the bottom end disk 4, and flows along path S1 in the bottom mixing tank 43. Then, it enters the through hole at the bottom of the support disk 2 through the intermediate mixing through hole 33 of the intermediate disk 3, ultimately achieving vacuuming of the porous ceramic disk 1 and realizing vacuum adsorption of the wafer. When the base mixing inlet 511 is connected to a compressed air source or a cleaning fluid pump, the corresponding compressed air and cleaning fluid delivery process is the same as the vacuum delivery process when connected to a negative pressure machine, and will not be described in detail here. It should be noted that the structure and method of selectively connecting different devices to the same channel and switching between them are existing technologies. For example, those skilled in the art can achieve this by setting a solenoid valve. One end of the solenoid valve is connected to a compressed air source, a cleaning fluid pump, and a negative pressure unit, while the other end is connected to the mixing inlet 511 of the base. Different media can be introduced by changing the position of the solenoid valve core. The specific structure and method are existing technologies in this field and will not be described in detail here.

[0059] The processing equipment provided by this invention, while fulfilling the functions of a traditional workbench structure, also incorporates a cooling circulation channel and a vacuum adsorption channel. Through structural design, the cooling circulation channel, vacuum adsorption channel, and mixing channel are ensured to operate independently, preventing mutual interference during processing. While meeting processing requirements, this effectively solves the problems of insufficient processing accuracy, low yield, and poor production continuity caused by heat deformation and dust accumulation during processing.

[0060] like Figure 8 As shown, the present invention provides a method for using a processing equipment, which is applied to the processing equipment in this embodiment to process wafers. The method for using the processing equipment includes the following steps:

[0061] The bottom plate 4 is vacuum-adsorbed onto the base plate 5 through the vacuum adsorption channel;

[0062] Turn on the circulation pump so that the cooling medium in the cooling circulation channel cools down the bearing plate 2 and the porous ceramic plate 1.

[0063] The robotic arm is used to place the wafer on the porous ceramic disk 1, and the base mixing inlet 511 is connected to the negative pressure machine outlet. The vacuum is drawn through the mixing channel to the holes on the porous ceramic disk 1, and the wafer is adsorbed onto the porous ceramic disk 1.

[0064] The wafer is ground using a grinding module.

[0065] By performing the above steps to process the wafer, the heat generated during processing can be promptly carried away by the cooling medium, preventing thermal deformation that could affect processing accuracy or continuity. Simultaneously, before processing, the bottom platen 4 is vacuum-adsorbed onto the base platen 5 to prevent silicon powder accumulation in the gap between the two during processing, which could lead to poor parallelism and affect the yield of the processed wafer.

[0066] Please continue to refer to Figure 8 As shown, after the wafer is ground, the following steps are also included:

[0067] Disconnect the base mixing inlet 511 from the negative pressure outlet and connect it to the outlet of the cleaning pump. The cleaning medium is then delivered to the holes on the porous ceramic disk 1 through the mixing channel to clean silicon powder and other particles from the wafer surface.

[0068] Disconnect the base mixing inlet 511 from the outlet of the cleaning pump and connect it to the interface of the compressed air source. Blow the holes on the porous ceramic disk 1 through the mixing channel to dry the wafer surface.

[0069] The robotic arm removes the processed wafer and places the wafer to be processed on the porous ceramic disk 1. The above steps are repeated.

[0070] By using the processing equipment in this embodiment, while ensuring the quality of the processed wafer products, it is also possible to achieve long-term continuous operation without having to stop midway to wait for the equipment to cool down, thus ensuring the continuity of processing and improving production efficiency.

[0071] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A processing device for processing wafers, comprising a grinding module for grinding the wafer, characterized in that, It also includes a worktable for supporting the wafer. The worktable includes: a porous ceramic disk (1), a support disk (2), an intermediate disk (3), a bottom disk (4), and a base disk (5). The porous ceramic disk (1), the support disk (2), the intermediate disk (3), the bottom disk (4), and the base disk (5) are connected sequentially from top to bottom. The porous ceramic disk (1), the support disk (2), and the intermediate disk (3) are sealed together from top to bottom. The worktable also includes: A cooling circulation channel, passing through at least the bottom plate (4) and the intermediate plate (3), is used to deliver a cooling medium to the intermediate plate (3), the cooling medium being used to cool the support plate (2) and the porous ceramic plate (1); A vacuum adsorption channel is provided on the base plate (5). The vacuum adsorption channel includes a first vacuum supply channel (520), a second vacuum supply channel (530), a first vacuum diffusion channel (550), and a second vacuum diffusion channel (560). The lower surface of the base plate (5) is provided with the first vacuum supply channel (520) and the second vacuum supply channel (530), which are independent of each other. The upper surface of the base plate (5) is provided with the vacuum diffusion channel. The vacuum diffusion channel is used to perform vacuum adsorption on the bottom plate (4). The second vacuum diffusion channel (560) is located outside the first vacuum diffusion channel (550). The supply channel (520) is connected to the first vacuum diffusion channel (550) through the first vacuum inlet (521) of the base. The second vacuum supply channel (530) is connected to the first vacuum diffusion channel (550) through the second vacuum hole (531) of the base. The second vacuum supply channel (530) is connected to the second vacuum diffusion channel (560) through the third vacuum hole (532) of the base. Two first sealing rings are provided between the bottom plate (4) and the base plate (5). One of the first sealing rings is located inside the first vacuum diffusion channel (550), and the other first sealing ring is located outside the second vacuum diffusion channel (560). A mixing channel passes sequentially through the base plate (5), the bottom plate (4), the intermediate plate (3), the support plate (2), and the porous ceramic plate (1), and is used for vacuuming, purging, or conveying cleaning media to the holes on the porous ceramic plate (1). The bottom plate (4) is provided with a bottom cooling inlet (41) and a bottom cooling outlet (44). The intermediate plate (3) is provided with multiple intermediate mixing through holes (33). The bottom plate (4) is provided with a curved and extended bottom mixing groove (43). The multiple intermediate mixing through holes (33) are connected to the bottom mixing groove (43). The bottom mixing groove (43) is connected to the... The bottom cooling inlet (41) and the bottom cooling outlet (44) are not connected. Two connected mixing supply channels (510) are provided at the bottom of the base plate (5). A base mixing inlet (511) is provided at the connection position of the two mixing supply channels (510). The base plate (5) is provided with a connected base mixing hole (512) and a mixing diffusion channel (540). The mixing diffusion channel (540) is connected to the mixing supply channel (510) through the base mixing hole (512). The bottom mixing groove (43) is connected to the mixing diffusion channel (540) through the bottom mixing hole (42). A circulation pump is used to pump cooling medium into the cooling circulation channel.

2. The processing equipment according to claim 1, characterized in that, It also includes a radiator and a water tank. The inlet of the circulating pump is connected to the water tank, which is used to store the cooling medium. The cooling circulation channel is connected to the inlet of the radiator, and the outlet of the radiator is connected to the water tank.

3. The processing equipment according to claim 1, characterized in that, The intermediate plate (3) is provided with a connected intermediate cooling inlet (31) and a cooling medium flow channel (32). The bottom cooling inlet (41), the intermediate cooling inlet (31), the cooling medium flow channel (32) and the bottom cooling outlet (44) are connected in sequence to form the cooling circulation channel.

4. The processing equipment according to claim 1, characterized in that, The cooling circulation channel passes through the base plate (5), the bottom plate (4), and the middle plate (3) in sequence.

5. The processing equipment according to claim 4, characterized in that, The intermediate plate (3) is provided with a connected intermediate cooling inlet (31) and cooling medium flow channel (32). The bottom plate (4) is provided with a bottom cooling inlet (41) and a bottom cooling outlet (44). The base plate (5) is provided with a base cooling through hole (580). The base cooling through hole (580), the bottom cooling inlet (41), the intermediate cooling inlet (31), the cooling medium flow channel (32) and the bottom cooling outlet (44) are connected in sequence to form the cooling circulation channel.

6. The method of using the processing equipment, characterized in that, The wafer is processed using the processing equipment described in any one of claims 1-5, and the method of using the processing equipment includes: The bottom plate (4) is vacuum adsorbed onto the base plate (5) through the vacuum adsorption channel; Turn on the circulation pump to cool the bearing plate (2) and the porous ceramic disc (1) through the cooling circulation channel; The wafer is placed on the porous ceramic disk (1), and the holes on the porous ceramic disk (1) are evacuated through the mixing channel; The wafer is ground using the grinding module.

7. The method of using the processing equipment according to claim 6, characterized in that, After grinding the wafer, the process further includes: The cleaning medium is delivered to the holes on the porous ceramic disc (1) through the mixing channel; The holes on the porous ceramic disk (1) are purged through the mixing channel; Remove the processed wafer.

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