A low-temperature ion trap device with precisely controllable temperature

Abstract

The invention relates to the technical field of ion trap devices, in particular to a temperature-accurately controllable low-temperature ion trap device, comprising: a water-cooling heat dissipation platform and a temperature-controllable ion trap chip arranged in a vacuum chamber, the temperature-controllable ion trap chip comprising an ion trap trapped electrode module and an ion trap base, the ion trap trapped electrode module being arranged on the ion trap base, the ion trap base being arranged on the water-cooling heat dissipation platform, a temperature sensor being arranged on the side of the ion trap trapped electrode module, a semiconductor refrigeration module being arranged on the ion trap base, a temperature control circuit and a water-cooling heat sink being arranged outside the vacuum chamber, the temperature sensor being used for collecting the actual temperature of the temperature-controllable ion trap chip, the temperature control circuit adjusting the temperature of the temperature-controllable ion trap chip through the semiconductor refrigeration module according to the actual temperature of the temperature-controllable ion trap chip, the water-cooling heat dissipation platform and the water-cooling heat sink continuously interact with each other thermally, and the heat of the temperature-controllable ion trap chip is continuously taken away through circulating water.

Description

Technical Field

[0001] The invention relates to the technical field of ion trap devices, in particular to a low-temperature ion trap device with precisely controllable temperature. Background Art

[0002] In the field of ion trap quantum precision measurement and quantum computing, ion trap chips based on trapped ions are one of the main technical routes to achieve quantum precision measurement and quantum computing. In order to improve the stability of trapped ions, low-temperature technology can be used to reduce the heating of ion crystals, reduce the thermal noise generated by the trap electrodes, and increase the trapping time of ion crystals, thereby improving the accuracy of quantum precision measurement.

[0003] At present, the ultra-low temperature technology using liquid nitrogen and liquid helium is a common method in the low-temperature cooling system of ion traps. The first method uses immersion cooling, which is quiet and efficient, but consumes a lot of low-temperature raw materials and has high cost. The second method uses circulating refrigeration, which requires expensive dilution refrigerators. At the same time, the mechanical vibration generated by the dilution refrigerator will also affect the stable confinement of ions, the mutual coupling between lasers and ions, etc., which will eventually lead to a decrease in the accuracy of precision measurements and decoherence of quantum bits. Summary of the invention

[0004] In view of at least one shortcoming in the prior art, the present invention provides a low-temperature ion trap device with precisely controllable temperature. The first advantage is that a semiconductor refrigeration module is integrated into a surface-type ion trap chip using micro-nano processing technology to achieve low-temperature refrigeration, thereby cooling the ion trap confinement electrode module. The second advantage is that the cooling temperature is controlled in real time by a temperature control circuit, no vibration is generated during the cooling process, and the cooling temperature is precisely controllable.

[0005] To achieve the above object, the present invention provides a low-temperature ion trap device with precisely controllable temperature, comprising:

[0006] A water-cooled heat dissipation platform and a temperature-controllable ion trap chip are arranged in a vacuum chamber, wherein the temperature-controllable ion trap chip comprises an ion trap trapped electrode module and an ion trap base, wherein the ion trap trapped electrode module is arranged on the ion trap base, and the ion trap base is arranged on the water-cooled heat dissipation platform, a temperature sensor is arranged on the side of the ion trap trapped electrode module, and a semiconductor refrigeration module is arranged on the ion trap base.

[0007] A temperature control circuit and a water-cooled radiator are arranged outside the vacuum chamber, wherein the temperature sensor is used to collect the actual temperature of the temperature-controllable ion trap chip, and the temperature control circuit adjusts the temperature of the temperature-controllable ion trap chip through the semiconductor refrigeration module according to the actual temperature of the temperature-controllable ion trap chip. The water-cooled heat dissipation platform continuously thermally interacts with the water-cooled radiator, and continuously removes the heat of the temperature-controllable ion trap chip through circulating water.

[0008] As described above, the temperature of the low-temperature ion trap device is precisely controllable. Furthermore, the ion trap confinement electrode module is manufactured using a micro-nano processing technology, wherein silicon dioxide is used as a substrate and a 100-nanometer thick gold layer is formed by a thermal evaporation process; then the thickness of the gold layer is increased to 10 microns by electroplating, and a DC electrode, a center electrode and a radio frequency electrode are etched on the surface, and multiple pairs of DC electrodes are etched.

[0009] The temperature-precisely controllable low-temperature ion trap device as described above, further, multiple pairs of the DC electrodes are symmetrically distributed on both sides of the RF electrodes, some of the DC electrodes serve as cap electrodes for providing an axial ion trapping electric field, and some of the DC electrodes serve as rotating electrodes for adjusting the ion trapping position; the central electrode is located at the center of the temperature-controllable ion trap chip for adjusting the ion trapping height; the RF electrodes are distributed on both sides of the central electrode for providing a radial trapping electric field.

[0010] As described above, the temperature-precisely controllable low-temperature ion trap device, further, the controllable temperature ion trap chip and the water-cooled heat dissipation platform are fixed by thermally conductive glue and screws, the water-cooled heat dissipation platform is provided with a water-cooling cavity, the water-cooling cavity is connected with a water inlet pipe and a water outlet pipe, the water inlet pipe and the water outlet pipe are connected to the water-cooled radiator through a vacuum flange.

[0011] In the temperature-precisely controllable low-temperature ion trap device as described above, further, the vacuum flange is fixed to the water-cooling heat dissipation platform through a plurality of stainless steel support columns.

[0012] As described above, the temperature of the low-temperature ion trap device is precisely controllable, and further, the vacuum flange is provided with an electrical interface, and the ion trap base is provided with a central electrode welding port, a radio frequency electrode welding port and a direct current electrode welding port, the central electrode welding port and the direct current electrode welding port are connected to the voltage control unit outside the vacuum chamber through the electrical interface, and the radio frequency electrode welding port is connected to the radio frequency resonance amplifier outside the vacuum chamber through the electrical interface.

[0013] The temperature-precisely controllable low-temperature ion trap device as described above, further, the ion trap base is provided with a plurality of mounting holes, and the ion trap base is fixed to the water-cooling heat dissipation platform through screws and the mounting holes.

[0014] In the above-mentioned low-temperature ion trap device with precisely controllable temperature, further, the substrate of the ion trap base is made of silicon dioxide material and paved with a metal layer.

[0015] The temperature of the low-temperature ion trap device with precise and controllable temperature as described above, further, the temperature control circuit includes: a temperature controller, a temperature detection display screen, a temperature value setting module, a PID parameter setting module and a DC power supply module, and the temperature controller is electrically connected to the temperature detection display screen, the temperature value setting module, the PID parameter setting module, the DC power supply module, the temperature sensor and the semiconductor refrigeration module respectively.

[0016] The temperature of the temperature-controlled ion trap device is precisely controllable as described above. Further, the temperature control circuit adjusts the temperature of the temperature-controlled ion trap chip through the semiconductor refrigeration module according to the actual temperature of the temperature-controlled ion trap chip. Specifically,

[0017] The temperature control circuit generates a control variable through a PID algorithm according to the deviation between the actual temperature of the ion trap chip and a preset temperature value;

[0018] The semiconductor refrigeration module increases or decreases the input current according to the control amount, thereby changing the cooling or heating power.

[0019] Compared with the prior art, the present invention has the following beneficial effects: there is no vibration or noise during the system cooling process, and the temperature is precisely controllable. At the same time, the stability of ion trapping, the accuracy of precision measurement, and the decoherence time of quantum bits are improved. The overall structure of the device is relatively simple, the construction and maintenance costs are low, the size is small, the weight is light, no refrigerant is required, energy-saving and environmentally friendly, and the operation is safe. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 is a principle block diagram in an embodiment of the present invention;

[0022] Figure 2 Schematic diagram of the structure of the temperature-controllable ion trap chip and the water-cooling heat dissipation platform in an embodiment of the present invention;

[0023] Figure 3 Schematic diagram of the structure of a temperature-controllable ion trap chip in an embodiment of the present invention;

[0024] Figure 4 is a schematic cross-sectional structure diagram of an ion trap chip in an embodiment of the present invention;

[0025] Figure 5 A simulation diagram of the trapped potential field of an ion trap chip in an embodiment of the present invention;

[0026] Figure 6 4 is a principle block diagram of a temperature control circuit in an embodiment of the present invention.

[0027] Among them, 1. controllable temperature ion trap chip; 2. water cooling chamber; 3. water cooling heat dissipation platform; 4. water inlet pipe; 5. water outlet pipe; 6. first stainless steel support column; 7. second stainless steel support column; 8. third stainless steel support column; 9. electrical interface; 10. flange; 11. DC electrode; 12. center electrode; 13. radio frequency electrode; 14. temperature sensor; 15. semiconductor refrigeration module; 16. ion trap base; 17. formation; 18. center electrode welding port; 19. radio frequency electrode welding port; 20. DC electrode welding port; 21. first mounting via; 22. second mounting via; 23. third mounting via; 24. fourth mounting via; 25. first DC electrode; 26. first radio frequency electrode; 27. first center electrode; 28. second radio frequency electrode; 29. ​​second DC electrode; 30. silicon dioxide substrate; 31. metal formation. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0029] Example:

[0030] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations of the embodiments of the present invention are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0031] In the description of the present invention, "multiple" means at least two, such as two, three, etc., unless otherwise clearly defined. In addition, unless otherwise clearly defined and defined, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0032] See also Figures 1 to 6 The present embodiment provides a temperature-accurately controllable low-temperature ion trap device, comprising: the temperature-accurately controllable ion trap device, comprising a water-cooled heat dissipation platform arranged in a vacuum chamber, a temperature-controllable ion trap chip, and a temperature control circuit and a water-cooled radiator outside the vacuum environment, such as Figure 1 shown.

[0033] Specifically, the temperature-controllable ion trap chip is divided into an ion trap confinement electrode module and an ion trap base. The ion trap confinement electrode module is manufactured using micro-nano processing technology, with silicon dioxide having good thermal conductivity as the substrate, and a thermal evaporation process is used to form a gold layer with a thickness of about 100 nanometers. The thickness of the gold layer is then increased to 10 microns by electroplating, and five pairs of DC electrodes, a central electrode and a radio frequency electrode are etched on the surface of the confinement electrode module, as well as vias for connecting the electrodes.

[0034] Furthermore, the DC electrodes are symmetrically distributed to provide an axial ion trapping potential; the RF electrode is divided into two, with the central electrode being symmetrically distributed, the outer DC electrode serving as a cap electrode to provide an axial ion trapping electric field, and the middle DC electrode serving as a rotating electrode to adjust the ion trapping position; the RF electrodes are distributed on both sides of the central electrode to provide a radial trapping electric field; the central electrode is located at the center of the chip to adjust the ion trapping height. Preferably, the DC electrode, the central electrode, and the RF electrode are rectangular in shape and made of metallic copper, which can evenly transfer the cold end temperature of the semiconductor refrigeration module to the trap electrode to achieve a better cooling effect. Preferably, a temperature measurement position is reserved on the side of the ion trapping electrode module for installing a temperature sensor.

[0035] Furthermore, the processing technology of the ion trap base is the same as that of the ion trap confinement electrode module, and a semiconductor refrigeration module is integrated on the ion trap base. Preferably, the semiconductor refrigeration module is a cube with a side length of 1 mm and is evenly and symmetrically distributed below the ion trap confinement electrode module. The semiconductor refrigeration module can generate a stable low-temperature environment according to the input current of the temperature control circuit to cool the ion trap confinement electrode module.

[0036] Specifically, a water-cooled heat dissipation platform is placed in a vacuum environment and is used to transfer the heat from the hot end of the temperature-controllable ion trap chip to the dielectric water in the cold water chamber. It is made of metal copper with good thermal conductivity, and a cold water chamber is opened inside it. The cold water chamber is made into a curved channel to better take away the heat. The water inlet and outlet of the cold water chamber are connected to the vacuum flange through a vacuum welding conduit, and after passing through the vacuum flange, it is connected to the water-cooled radiator outside the vacuum, which can realize water circulation heat dissipation.

[0037] Specifically, the temperature control circuit is used to control the temperature of the ion trap chip. It is placed outside the vacuum environment and connected to the temperature sensor through a vacuum flange to collect the real-time temperature signal of the ion trap chip and calculate the temperature difference between the actual temperature and the set temperature value. The PID control algorithm is used to control the input current of the semiconductor refrigeration module in the ion trap according to the temperature difference to achieve high-precision temperature control.

[0038] Specifically, the water-cooled radiator is placed outside the vacuum environment, and its water inlet is connected to the water outlet of the water-cooled heat dissipation platform through a water pipe. The water outlet is connected to the water inlet of the water-cooled heat dissipation platform to dissipate the heat transferred from the water-cooled heat dissipation platform. A water pump and a heat dissipation water drain are built into the water-cooled radiator to realize the circulation and heat dissipation of the medium water, and the medium water has the advantages of large heat capacity and small temperature fluctuation.

[0039] like Figure 2 As shown, in an implementation example, the device in the vacuum environment of this embodiment is a temperature-controlled ion trap chip 1, a water-cooling cavity 2 and a water-cooling heat dissipation platform 3. The temperature-controlled ion trap chip 1 and the water-cooling heat dissipation platform 3 are first connected by heat-conducting glue to increase the heat conductivity, and then fixed by installing screws in the preset installation holes to improve the stability of the installation. A water-cooling heat dissipation platform 3 is provided with a water-cooling cavity 2 inside, and a water inlet pipe 4 and a water outlet pipe 5 connected to the water-cooling cavity 2 are arranged at the lower end of the water-cooling heat dissipation platform 3. The water inlet pipe 4 and the water outlet pipe 5 pass through the vacuum flange and are connected to the water-cooling radiator, thereby forming a cooling water circulation system with the water-cooling cavity 2 to achieve uninterrupted heat transfer and ensure the heat dissipation of the hot end of the temperature-controlled ion trap chip 1. The water-cooling heat dissipation platform 3 is supported by a first stainless steel support column 6, a second stainless steel support column 7 and a third stainless steel support column 8, and the first stainless steel support column 6, the second stainless steel support column 7 and the third stainless steel support column 8 are supported and installed on the flange 10 to ensure the stability of the platform. Preferably, the height of the first stainless steel support column 6, the second stainless steel support column 7 and the third stainless steel support column 8 is 10 cm. Preferably, there is a reserved electrical interface 9 in the middle of the flange 10 for connecting the temperature-controllable ion trap chip 1 semiconductor refrigeration module, the temperature sensor, and the electrical connection of the trapped electrode module.

[0040] In one implementation example, a detailed structural decomposition diagram of a temperature-controllable ion trap chip is shown in FIG. Figure 3As shown, the trapped electrode module includes 5 pairs of DC electrodes 11, a central electrode 12, and a radio frequency electrode 13. The 5 pairs of DC electrodes 11 are symmetrically distributed on both sides of the radio frequency electrode 13. The two pairs of electrodes outside the 5 pairs of DC electrodes 11 are used as cap electrodes to provide an axial trapped electric field for ions, and the three pairs of electrodes in the middle are used as rotating electrodes to adjust the ion trapped position; the central electrode 12 is located at the center of the ion trap chip to adjust the ion trapped height; the radio frequency electrodes 13 are distributed on both sides of the central electrode to provide a radial trapped electric field. Then, when the 5 pairs of DC electrodes 11 and the central electrode 12 are used, they need to be connected to the central electrode welding port 18 and the DC electrode welding port 20 first, and then the voltage control unit is externally connected through the vacuum flange electrical interface 9. When the radio frequency electrode 13 is used, it needs to be connected to the radio frequency electrode welding port 19 first, and then the radio frequency resonance amplifier is externally connected through the vacuum flange electrical interface 9.

[0041] Furthermore, the temperature sensor 14 is attached to the reserved temperature measurement area on the side of the controllable ion trap chip 1 by thermally conductive glue, and is used for real-time temperature detection, so as to better implement temperature control. When in use, it needs to be connected to the vacuum flange electrical interface 9 by a wire, and then connected to the temperature collection connection port of the temperature control circuit. The semiconductor refrigeration module 15 is evenly distributed under the ion trap chip and welded to the ion trap base 16 by a welding process. When in use, its positive and negative electrode interfaces are connected to the vacuum flange electrical interface 9 by a wire, and then connected to the temperature control current connection port of the temperature control circuit. The ion trap base 16 is provided with a stratum 17, a central electrode welding port 18, a radio frequency electrode welding port 19, and a direct current electrode welding port 20. When in use, the base of the ion trap base 16 is made of silicon dioxide material with good thermal conductivity and is paved with a metal stratum, which can better transfer the heat from the hot end of the semiconductor refrigeration module to the water-cooled heat dissipation platform 3. The ion trap base 16 is reserved with four mounting holes, namely a first mounting hole 21, a second mounting hole 22, a third mounting hole 23, and a fourth mounting hole 24. The ion trap base 16 can be fixed on the water-cooled heat dissipation platform 3 by screws and mounting holes.

[0042] In one implementation example, the cross-sectional view of the ion trapping electrode module is as follows: Figure 4As shown, the first DC electrode 25 and the second DC electrode 29 are symmetrical to each other, the first RF electrode 26 and the second RF electrode 28 are symmetrical to each other, the first central electrode 27 is placed in the center, all electrodes are formed by thermal evaporation process with a gold layer of about 100 nanometers, and then the thickness of the gold layer is increased to 10 microns by electroplating, the silicon dioxide substrate 30 is below the electrode, and its thickness is 550 microns, and a metal layer 31 is laid below the silicon dioxide substrate 30, and its thickness is about 10 microns. The material is metal copper, which can evenly transfer the cold end temperature of the semiconductor refrigeration module to the electrode to achieve a better cooling effect. Preferably, the DC electrode is 200 microns long and 50 microns wide, the RF electrode is 1100 microns long and 50 microns wide, the central electrode is 1100 microns long and 50 microns wide, the silicon dioxide substrate is 550 microns thick, and a metal layer is laid below the silicon dioxide substrate, and its thickness is about 10 microns.

[0043] In one implementation example, the trapping potential field generated by the ion trapping electrode module is as follows: Figure 5 As shown, the rotating electrode in the five pairs of DC electrodes is grounded, the voltage value is 0V, the cap electrode voltage value is 40V, and the RF electrode applies a RF signal with a frequency of 20MHz and an amplitude of 400V. Under the above trapping electrode parameters, the ion trapping height is about 500 microns.

[0044] In an implementation example, the principle of the temperature control circuit is as follows Figure 6 As shown, the temperature control circuit mainly includes a temperature controller, model HTC1500; a temperature detection display screen, which is used to display the ion trap temperature in real time; a temperature value setting module, which is used to adjust the ion trap temperature; a PID parameter setting module, which is used to find the optimal parameters of PID control to achieve the effect of stable locking temperature; and a DC power supply module, which provides stable power supply for the temperature controller. When in use, first set the temperature value module to convert the target temperature into a target voltage value, the temperature sensor (P0K1.202.3KA010) measures the actual temperature of the ion trap chip, and converts the real-time collected temperature into an actual voltage signal and transmits it to the sensor port of the temperature controller (HTC1500). The PID control algorithm subtracts the actual voltage value from the target voltage value to obtain an error value, and adjusts the input current of the semiconductor refrigeration module according to the size of the error value to control the cooling capacity of the semiconductor refrigeration module, thereby forming a closed-loop feedback circuit to accurately control the temperature of the ion trap system.

[0045] It should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0046] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0047] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0048] The above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable ordinary technicians in the field to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made based on the essence of the content of the present invention should be included in the protection scope of the present invention.

Claims

1. A low-temperature ion trap device with precisely controllable temperature, characterized in that: include: A water-cooled heat dissipation platform and a temperature-controllable ion trap chip are arranged in a vacuum chamber, wherein the temperature-controllable ion trap chip comprises an ion trap trapped electrode module and an ion trap base, wherein the ion trap trapped electrode module is arranged on the ion trap base, and the ion trap base is arranged on the water-cooled heat dissipation platform, a temperature sensor is arranged on the side of the ion trap trapped electrode module, and a semiconductor refrigeration module is arranged on the ion trap base. A temperature control circuit and a water-cooled radiator are arranged outside the vacuum chamber, wherein the temperature sensor is used to collect the actual temperature of the temperature-controllable ion trap chip, and the temperature control circuit adjusts the temperature of the temperature-controllable ion trap chip through the semiconductor refrigeration module according to the actual temperature of the temperature-controllable ion trap chip. The water-cooled heat dissipation platform continuously thermally interacts with the water-cooled radiator, and continuously removes the heat of the temperature-controllable ion trap chip through circulating water.

2. The temperature-precisely controllable low-temperature ion trap device according to claim 1, characterized in that: The ion trap electrode module is manufactured using a micro-nano processing technology, wherein silicon dioxide is used as a substrate and a 100-nanometer-thick gold layer is formed using a thermal evaporation process; then the thickness of the gold layer is increased to 10 microns using an electroplating method, and a DC electrode, a center electrode and a radio frequency electrode are etched on the surface, wherein multiple pairs of DC electrodes are etched.

3. The temperature-precisely controllable low-temperature ion trap device according to claim 2, characterized in that: Multiple pairs of DC electrodes are symmetrically distributed on both sides of the RF electrode. The outer DC electrodes serve as cap electrodes for providing an axial ion trapping electric field, and the middle DC electrodes serve as rotating electrodes for adjusting the ion trapping position. The central electrode is located at the center of the temperature-controllable ion trap chip for adjusting the ion trapping height. The RF electrodes are distributed on both sides of the central electrode for providing a radial trapping electric field.

4. The temperature-precisely controllable low-temperature ion trap device according to claim 1, characterized in that: The temperature-controllable ion trap chip is fixed to the water-cooled heat dissipation platform by means of thermally conductive glue and screws. The water-cooled heat dissipation platform is provided with a water-cooling cavity, the water-cooling cavity is connected with a water inlet pipe and a water outlet pipe, and the water inlet pipe and the water outlet pipe are connected to the water-cooled radiator through a vacuum flange.

5. The temperature-precisely controllable low-temperature ion trap device according to claim 4, characterized in that: The vacuum flange is fixed on the water-cooling heat dissipation platform through a plurality of stainless steel support columns.

6. The temperature-precisely controllable low-temperature ion trap device according to claim 4, characterized in that: The vacuum flange is provided with an electrical interface, and the ion trap base is provided with a central electrode welding port, a radio frequency electrode welding port and a direct current electrode welding port. The central electrode welding port and the direct current electrode welding port are connected to the voltage control unit outside the vacuum chamber through the electrical interface, and the radio frequency electrode welding port is connected to the radio frequency resonance amplifier outside the vacuum chamber through the electrical interface.

7. The temperature-precisely controllable low-temperature ion trap device according to claim 1, characterized in that: The ion trap base is provided with a plurality of mounting through holes, and the ion trap base is fixed to the water-cooling heat dissipation platform through screws and the mounting through holes.

8. The temperature-precisely controllable low-temperature ion trap device according to claim 1, characterized in that: The base of the ion trap base is made of silicon dioxide material and is paved with a metal layer.

9. The temperature-precisely controllable low-temperature ion trap device according to claim 1, characterized in that: The temperature control circuit includes: a temperature controller, a temperature detection display screen, a temperature value setting module, a PID parameter setting module and a DC power supply module. The temperature controller is electrically connected to the temperature detection display screen, the temperature value setting module, the PID parameter setting module, the DC power supply module, the temperature sensor and the semiconductor refrigeration module respectively.

10. The temperature-precisely controllable low-temperature ion trap device according to claim 9, characterized in that: The temperature control circuit adjusts the temperature of the temperature-controllable ion trap chip through the semiconductor refrigeration module according to the actual temperature of the temperature-controllable ion trap chip, specifically, The temperature control circuit generates a control variable through a PID algorithm according to the deviation between the actual temperature of the ion trap chip and a preset temperature value; The semiconductor refrigeration module increases or decreases the input current according to the control amount, thereby changing the cooling or heating power.

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