An annealing furnace device for semiconductor processing

Abstract

The present invention discloses an annealing furnace device for semiconductor processing, which relates to the technical field of annealing furnace devices and includes a furnace body. A ventilation component is provided on the furnace body. The ventilation component includes an air inlet groove, an air inlet channel, a first jet groove, a second jet groove, and a suction groove. A plurality of the second jet grooves are provided. The air inlet groove is opened on the outer wall of the furnace body and is used for conveying cooling gas. The air inlet channel is opened inside the wall of the furnace body. The air inlet channel is arc-shaped and is communicated with the air inlet groove. The width of the air inlet channel gradually becomes larger in the direction away from the air inlet groove. The first jet groove is opened on the inner wall of the furnace body. In this annealing furnace device for semiconductor processing, by providing a ventilation component on the furnace body, including structures such as a first jet groove, a second jet groove, and a suction groove, it is ensured that the cooling gas can more quickly and evenly take away the heat in the furnace, thereby achieving the purpose of quickly cooling the semiconductor material.

Description

Technical Field

[0001] The present invention relates to the technical field of annealing furnace devices, and particularly to an annealing furnace device for semiconductor processing. Background Art

[0002] The principle of semiconductor annealing process is an important process in the semiconductor manufacturing process. It can improve the electrical and structural properties of semiconductor materials, and enhance the performance and reliability of semiconductor devices. The influencing factors of semiconductor annealing mainly include temperature, time, atmosphere, material type, and material state, etc. Among them, temperature is the most important factor affecting the annealing effect of semiconductors. Common annealing processes can be divided into various types such as thermal annealing, photo annealing, electron beam annealing, and laser annealing. Among them, thermal annealing is the most commonly used annealing method. Rapid thermal annealing in thermal annealing is a sudden thermal annealing process, generally using a laser or other energy sources to rapidly heat the material surface, and then cooling in the air.

[0003] However, cooling in the air has low efficiency. Especially for some semiconductor materials with high requirements for the cooling rate, it is easy to reduce the annealing quality.

[0004] Therefore, it is very necessary to propose an annealing furnace device for semiconductor processing to solve the above problems. Summary of the Invention

[0005] The purpose of the present invention is to provide an annealing furnace device for semiconductor processing to solve the problem that cooling in the air has low efficiency. Especially for some semiconductor materials with high requirements for the cooling rate, it is easy to reduce the annealing quality.

[0006] To achieve the above purpose, the present invention provides the following technical solution: An annealing furnace device for semiconductor processing, including a furnace body. A ventilation component is provided on the furnace body. The ventilation component includes an air inlet groove, an air inlet channel, a first jet groove, a second jet groove, and a suction groove. The second jet groove is provided in multiple numbers. The air inlet groove is opened on the outer wall of the furnace body and is used for conveying cooling gas. The air inlet channel is opened inside the wall of the furnace body. The air inlet channel is arc-shaped and is communicated with the air inlet groove. The width of the air inlet channel gradually becomes larger in the direction away from the air inlet groove. The first jet groove is opened on the inner wall of the furnace body. The first jet groove is communicated with the middle section of the air inlet channel. The suction groove is opened on the inner wall of the furnace body. The suction groove and the first jet groove are symmetrically distributed about the axis of the furnace body. The second jet groove is opened on the inner wall of the furnace body. The second jet groove is inclined and is communicated with the air inlet channel. Multiple second jet grooves are evenly distributed on both sides of the first jet groove. The inner diameter of the second jet groove gradually becomes smaller in the direction away from the air inlet channel. A wind force component and a connection component are provided on the furnace body and are matched with the air inlet groove and the suction groove.

[0007] Preferably, a plurality of ventilation components are provided, and the plurality of ventilation components are equidistantly distributed.

[0008] Preferably, the connection component includes a suction channel, a suction box, and a telescopic tube. The suction channel is formed inside the wall of the furnace body and is distributed along the height direction of the furnace body. The width of the suction channel gradually increases from top to bottom. A plurality of suction slots are all communicated with the suction channel. The suction box is fixedly connected to the top of the furnace body. The suction channel is communicated with the suction box. The telescopic tube is communicated with the suction box.

[0009] Preferably, the connection component further includes a U-shaped tube, a third air duct, and a connector. The U-shaped tube is fixedly connected to the outer wall of the furnace body. The U-shaped tube is communicated with the connector through the third air duct. The connector is communicated with the air inlet slot.

[0010] Preferably, the wind power component includes a support plate, a first air duct, a treatment box, a pump body, a second air duct, and a wind box. The support plate is fixedly connected to the outer wall of the furnace body. The treatment box and the pump body are both fixedly connected to the support plate. The air inlet end of the pump body is communicated with the treatment box. One end of the first air duct is communicated with the telescopic tube, and the other end of the first air duct is communicated with the treatment box. The wind box is fixedly connected to the outer wall of the furnace body. A plurality of U-shaped tubes are all communicated with the wind box. One end of the second air duct is communicated with the air outlet end of the pump body, and the other end of the second air duct is communicated with the wind box.

[0011] Preferably, a groove is formed on the upper surface of the bottom of the furnace body. A motor is fixedly connected inside the groove. A turntable is fixedly connected to the driving shaft of the motor. The turntable is slidably attached to the inner wall of the furnace body. An air ventilation ring groove is formed on the outer ring of the turntable. The air ventilation ring groove is in communication and cooperation with the suction channel. A suction ring groove is formed on the upper surface of the turntable. The suction ring groove is communicated with the air ventilation ring groove through a square opening. A first solenoid valve is fixedly installed inside the square opening. A pressure sensor is fixedly arranged inside the air cavity.

[0012] Preferably, an air cavity is formed inside the turntable. A round hole is formed on the upper surface of the turntable. The round hole is communicated with the air cavity. The air cavity is communicated with the air ventilation ring groove through a gas channel. A second solenoid valve is fixedly installed inside the gas channel.

[0013] Preferably, an elastic strip is fixedly arranged inside the second jet groove. The elastic strip is in an S shape.

[0014] Preferably, a plurality of stoppers are fixedly connected to the inner wall of the furnace body. The plurality of stoppers are distributed in one-to-one correspondence with the plurality of second jet grooves. The stoppers are in a triangular structure.

[0015] Preferably, the top of the furnace body is hermetically fitted with a cover plate.

[0016] Technical effects and advantages of the present invention:

[0017] By providing a ventilation component on the furnace body, including structures such as a first jet groove, a second jet groove, and a suction groove, etc., the present invention ensures that the cooling gas can more quickly and evenly take away the heat in the furnace, thereby achieving the purpose of quickly cooling the semiconductor material;

[0018] Since the second jet groove is inclined, the cooling gas acts on the semiconductor material at a certain inclination angle. Compared with the cooling gas directly acting on the semiconductor material vertically, the coverage area of the cooling gas can be expanded, and the flow velocity of the cooling gas can be increased;

[0019] Multiple second jet grooves are evenly distributed on both sides of the first jet groove to ensure the heat dissipation range;

[0020] The air outlet directions of multiple second jet grooves on the same side of the first jet groove are close, and there will be no chaotic wind direction resulting in difficult heat discharge, improving the efficiency of cooling;

[0021] The width of the air inlet channel gradually increases in the direction away from the air inlet groove, which can ensure the uniformity of the gas entering the air inlet channel, and further ensure the uniformity of the air supply of multiple second jet grooves;

[0022] The inner diameter of the second jet groove gradually decreases in the direction away from the air inlet channel, so that the flow velocity of the cooling gas increases during the spraying process, enhancing the heat dissipation effect;

[0023] When the cooling gas is ejected from the second jet groove, it will cause the elastic strip to oscillate, and then cause the cooling gas to oscillate, further expanding the coverage range;

[0024] A stop block is provided to prevent the air flow from interfering with the air outlet direction of the second jet groove. At the same time, the cooling gas will blow towards the semiconductor material along the inclined surface of the stop block, improving the utilization efficiency of the cooling gas;

[0025] By providing a wind power component and a communication component, and a single pump body can perform air supply and suction operations simultaneously, improving the efficiency of cooling and achieving the purpose of reducing energy consumption;

[0026] The heat at the bottom end of the semiconductor material is sucked through the square opening and the suction ring groove to ensure the uniformity of the heat dissipation of the semiconductor material. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a schematic structural diagram of the annealing furnace device for semiconductor processing according to the present invention.

[0028] Figure 2 It is a schematic structural diagram of the furnace body and the cover plate according to the present invention.

[0029] Figure 3 For the present inventionFigure 2 Schematic enlarged view of the structure at position B in [the figure].

[0030] Figure 4 Schematic diagram of the furnace body and turntable structures of the present invention.

[0031] Figure 5 Schematic diagram of the intake passage and the second jet groove structures of the present invention.

[0032] Figure 6 of the present invention Figure 5 Schematic enlarged view of the structure at position C in [the figure].

[0033] Figure 7 of the present invention Figure 5 Schematic enlarged view of the structure at position D in [the figure].

[0034] Figure 8 of the present invention Figure 7 Schematic enlarged view of the structure at position E in [the figure].

[0035] In the figure: 1. Furnace body; 2. Intake groove; 3. Intake passage; 4. First jet groove; 5. Second jet groove; 6. Elastic strip; 7. Stopper; 8. Suction passage; 9. Suction groove; 10. Round hole; 11. Cover plate; 12. Suction box; 13. Telescopic tube; 14. Support plate; 15. First air duct; 16. Processing box; 17. Pump body; 18. Second air duct; 19. Air box; 20. U-shaped tube; 21. Third air duct; 22. Connector; 23. Turntable; 24. Groove; 25. Motor; 26. Ventilation ring groove; 27. Suction ring groove; 28. Square opening; 29. First solenoid valve; 30. Gas passage; 31. Second solenoid valve; 32. Air cavity. Detailed implementation manners

[0036] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0037] The present invention provides an annealing furnace device for semiconductor processing as shown in Figures 1 to 8 the figure, which includes a furnace body 1. The top of the furnace body 1 is sealingly fitted with a cover plate 11. After the semiconductor material is subjected to temperature rise and heat preservation treatments, the cover plate 11 is opened, and it is placed into the interior of the furnace body 1 through a hoisting device, and then the cover plate 11 is closed. The temperature rise and heat preservation treatments are common existing technologies and will not be elaborated here. This annealing furnace device is particularly suitable for semiconductor rods and can be used according to actual needs.

[0038] To achieve ventilation, cooling, and temperature reduction of semiconductor materials, a ventilation component is provided on the furnace body 1. The ventilation component is set in multiple groups, and the multiple groups of ventilation components are equidistantly distributed. Setting multiple groups of ventilation components can expand the coverage area. The ventilation component includes an air inlet groove 2, an air inlet channel 3, a first jet groove 4, a second jet groove 5, and a suction groove 9, and multiple second jet grooves 5 are provided. The air inlet groove 2 is opened on the outer wall of the furnace body 1, and the air inlet groove 2 is used to convey cooling gas. The air inlet channel 3 is opened inside the wall of the furnace body 1. The air inlet channel 3 is arc-shaped and communicates with the air inlet groove 2. The first jet groove 4 is opened on the inner wall of the furnace body 1. The first jet groove 4 communicates with the middle section of the air inlet channel 3, and the first jet groove 4 is used to supply air into the furnace body 1. The suction groove 9 is opened on the inner wall of the furnace body 1. The suction groove 9 is used to suck the gas inside the furnace body 1. The suction groove 9 and the first jet groove 4 are symmetrically distributed about the axis of the furnace body 1, and both the suction groove 9 and the first jet groove 4 can be set in a trapezoidal shape, with the width being larger at the end closer to the inside of the furnace body 1 to expand the coverage area of air supply and suction. The second jet groove 5 is opened on the inner wall of the furnace body 1. The second jet groove 5 is inclined and communicates with the air inlet channel 3.

[0039] Specifically, cooling gas is conveyed from the air inlet groove 2 into the interior of the air inlet channel 3. The cooling gas is sprayed onto the semiconductor material from the first jet groove 4 and the second jet groove 5. During the cooling process, the gas will be heated and the high-temperature gas inside the furnace body 1 will be sucked by the suction groove 9. Refer to Figure 5 , air is supplied on the right half and sucked on the left half to achieve the regular circulation of the gas inside the furnace body 1 and accelerate the heat dissipation.

[0040] In the present invention, by providing a ventilation component on the furnace body 1, including structures such as the first jet groove 4, the second jet groove 5, and the suction groove 9, it is ensured that the cooling gas can more quickly and evenly carry away the heat in the furnace, thereby achieving the purpose of quickly reducing the temperature of the semiconductor material.

[0041] Since the second jet groove 5 is inclined, the cooling gas acts on the semiconductor material at a certain inclination angle. And compared with the cooling gas directly acting on the semiconductor material vertically, the coverage area of the cooling gas can be expanded and the flow velocity of the cooling gas can be increased.

[0042] Moreover, the inclination angle of the second jet groove 5 can be adjusted according to specific usage conditions.

[0043] Considering expanding the wind coverage range, multiple second jet grooves 5 are evenly distributed on both sides of the first jet groove 4 to ensure the heat dissipation range; and the air outlet directions of the multiple second jet grooves 5 on the same side of the first jet groove 4 are close, and there will be no chaotic wind direction resulting in difficult heat dissipation, improving the efficiency of cooling and temperature reduction. For example: Figure 5 In, the wind force of the multiple second jet grooves 5 at the upper right half position is in the counterclockwise direction, while the wind force of the multiple second jet grooves 5 at the lower right half position is in the clockwise direction.

[0044] Considering the delivery of gas from the intake groove 2 to the interior of the intake passage 3, due to factors such as friction and the extension of the delivery path, the wind force will attenuate. The width of the intake passage 3 gradually increases in the direction away from the intake groove 2, which can ensure the uniformity of the gas entering the interior of the intake passage 3, and further ensure the uniformity of the air supply of the multiple second jet grooves 5.

[0045] Considering improving the wind force effect, the inner diameter of the second jet groove 5 gradually decreases in the direction away from the intake passage 3, so that the flow rate of the cooling gas increases during the ejection process, enhancing the heat dissipation effect.

[0046] An elastic strip 6 is fixedly arranged inside the second jet groove 5. The elastic strip 6 is in an S shape. When the cooling gas is ejected from the second jet groove 5, it will cause the elastic strip 6 to oscillate, and then cause the cooling gas to oscillate, further expanding the coverage range.

[0047] Considering that the air outlet directions of the multiple second jet grooves 5 on the same side of the first jet groove 4 are close, and the inner wall of the furnace body 1 is in an arc-shaped structure, in order to avoid the air flow interfering with the air outlet direction of the second jet groove 5, a baffle 7 is fixedly connected to the inner wall of the furnace body 1. A plurality of baffles 7 are provided, and the plurality of baffles 7 are distributed in one-to-one correspondence with the plurality of second jet grooves 5. The baffle 7 is in a triangular structure, and the baffle 7 is located on the side of the corresponding second jet groove 5 close to the first jet groove 4. Refer to Figure 7 When the cooling gas is ejected from the second jet groove 5 at the right side position, part of the gas will blow towards the second jet groove 5 at the left side position. By setting the baffle 7, the air flow is prevented from interfering with the air outlet direction of the second jet groove 5. At the same time, the cooling gas will blow towards the semiconductor material along the inclined surface of the baffle 7, improving the utilization efficiency of the cooling gas.

[0048] A communication component is provided on the furnace body 1 and is matched with the intake groove 2 and the suction groove 9. The communication component includes a suction channel 8, a suction box 12 and a telescopic tube 13. The suction channel 8 is opened inside the wall of the furnace body 1 and is distributed along the height direction of the furnace body 1. A plurality of suction grooves 9 are all communicated with the suction channel 8. The suction box 12 is fixedly connected to the top of the furnace body 1. The suction channel 8 is communicated with the suction box 12. The telescopic tube 13 is communicated with the suction box 12.

[0049] Considering that a plurality of suction grooves 9 are all communicated with the suction channel 8, and the path of the suction groove 9 at the bottom end position is relatively long, the width of the suction channel 8 is set to gradually increase from top to bottom to ensure the uniformity of suction.

[0050] During specific settings, the connected component further includes a U-shaped tube 20, a third air duct 21, and a connector 22. The U-shaped tube 20 is fixedly connected to the outer wall of the furnace body 1. The U-shaped tube 20 has a U-shaped structure, which can improve the stability of use. The U-shaped tube 20 is connected to the connector 22 through the third air duct 21, and the connector 22 is connected to the air inlet groove 2.

[0051] A wind power assembly is provided on the furnace body 1 and is matched with the air inlet groove 2 and the suction groove 9. The wind power assembly includes a support plate 14, a first air duct 15, a processing box 16, a pump body 17, a second air duct 18, and a wind box 19. The support plate 14 is fixedly connected to the outer wall of the furnace body 1. The processing box 16 and the pump body 17 are both fixedly connected to the support plate 14. The air inlet end of the pump body 17 is communicated with the processing box 16. A filtering device and a cooling device are arranged inside the processing box 16. The filtering device includes structures such as a filter plate and can filter the sucked gas. The cooling device includes structures such as a cooling plate and can cool the gas, realizing the delivery of cooling gas to the inside of the furnace body 1. The filtering device and the cooling device are both common existing technologies and will not be elaborated here. And a condensation device can be selectively installed in the processing box 16 to avoid the influence of water vapor on cooling, and it can be used according to actual needs. One end of the first air duct 15 is communicated with the telescopic tube 13, and the other end of the first air duct 15 is communicated with the processing box 16. The wind box 19 is fixedly connected to the outer wall of the furnace body 1, and multiple U-shaped tubes 20 are all communicated with the wind box 19. One end of the second air duct 18 is communicated with the air outlet end of the pump body 17, and the other end of the second air duct 18 is communicated with the wind box 19.

[0052] During operation, the pump body 17 delivers cooling gas to the inside of the air inlet passage 3 through the second air duct 18, the wind box 19, the U-shaped tube 20, the third air duct 21, the connector 22, and the air inlet groove 2, and the cooling gas is sprayed onto the semiconductor material from the first jet groove 4 and the second jet groove 5.

[0053] During this process, the pump body 17 also sucks the high-temperature gas inside the furnace body 1 through the first air duct 15, the telescopic tube 13, the suction box 12, the suction passage 8, and the suction groove 9, realizing the gas circulation inside the furnace body 1 and accelerating the discharge of heat.

[0054] By setting the wind power assembly and the connected component, and a single pump body 17 can simultaneously perform air supply and suction operations, the efficiency of cooling is improved, and the purpose of reducing energy consumption is achieved at the same time.

[0055] During the gas flow process, dust and other impurities outside the semiconductor material and inside the furnace body 1 will be sucked into the inside of the processing box 16 for filtering.

[0056] In addition, since the semiconductor material is still in a high-temperature state when placed inside the furnace body 1, it may affect the air pressure inside the furnace body 1. A pressure relief device, etc., including structures such as a pressure gauge, can be provided on the furnace body 1 to ensure the cooling process. The pressure relief device and its working principle are common existing technologies and will not be elaborated here.

[0057] Considering the fixation of the semiconductor material, a groove 24 is formed on the upper surface of the bottom of the furnace body 1. A motor 25 is fixedly connected inside the groove 24. A turntable 23 is fixedly connected to the drive shaft of the motor 25. The turntable 23 is slidably attached to the inner wall of the furnace body 1. After the semiconductor material is placed inside the furnace body 1, it is located on the turntable 23. An air vent ring groove 26 is formed on the outer ring of the turntable 23. The air vent ring groove 26 is circular. The air vent ring groove 26 is in communication and cooperation with the suction channel 8, so that even when the turntable 23 rotates, the air vent ring groove 26 can remain in communication with the suction channel 8.

[0058] An air cavity 32 is formed inside the turntable 23. A round hole 10 is formed on the upper surface of the turntable 23. The round hole 10 is in communication with the air cavity 32. The air cavity 32 is in communication with the air vent ring groove 26 through a gas channel 30. A second electromagnetic valve 31 is fixedly installed inside the gas channel 30.

[0059] During operation, the semiconductor material is placed inside the furnace body 1 through a hoisting device and is located on the turntable 23, and then the cover plate 11 is closed. Then the second electromagnetic valve 31 is opened, and the pump body 17 is started. The pump body 17 performs negative pressure adsorption on the semiconductor material through the first air duct 15, the telescopic pipe 13, the suction box 12, the suction channel 8, the air vent ring groove 26, the gas channel 30, the air cavity 32, and the round hole 10. Then the second electromagnetic valve 31 is closed to fix it on the turntable 23, facilitating the cooling operation.

[0060] A pressure sensor is fixedly arranged inside the air cavity 32. Specifically, a controller can be arranged to be connected between the pressure sensor and the second electromagnetic valve 31. When performing negative pressure adsorption on the semiconductor material, when the pressure sensor detects that the pressure inside the air cavity 32 reaches the set threshold, the second electromagnetic valve 31 will be closed through the controller;

[0061] In addition, considering that the temperature of the semiconductor material may cause the gas inside the air cavity 32 to expand due to heat, resulting in an increase in air pressure. When the pressure sensor detects that the pressure inside the air cavity 32 exceeds the threshold, the controller opens the second electromagnetic valve 31 to perform suction again to ensure the stability of the positioning of the semiconductor material.

[0062] Moreover, structures such as the second electromagnetic valve 31 and the pressure sensor are all subjected to high-temperature protection treatment to avoid being affected by high temperature, and other structures inside this device can be selectively subjected to high-temperature protection treatment.

[0063] During specific use, a control valve (not shown in the figure) can be set at the suction groove 9. When performing negative pressure adsorption on the semiconductor material, the control valve is closed to improve the suction efficiency. Since the suction time is extremely short, it will not affect the cooling.

[0064] During operation, start the motor 25, and drive the semiconductor material to rotate through the turntable 23 to perform segmented and sufficient cooling on the semiconductor material, which can ensure the cooling effect.

[0065] Considering that the bottom end of the semiconductor material directly abuts on the turntable 23, the heat dissipation efficiency at this place is relatively low. A suction ring groove 27 is opened on the upper surface of the turntable 23. The suction ring groove 27 is inclined (refer to Figure 4 ), and its top opening is inclined towards the axis direction of the furnace body 1. When the semiconductor material is placed on the turntable 23, the heat at its bottom end can be sucked through the suction ring groove 27. The suction ring groove 27 is communicated with the ventilation ring groove 26 through a square opening 28, and a first solenoid valve 29 is fixedly installed inside the square opening 28.

[0066] During operation, open the first solenoid valve 29, and then suck the heat at the bottom end position of the semiconductor material through the square opening 28 and the suction ring groove 27 to ensure the uniformity of heat dissipation of the semiconductor material.

[0067] Working principle: After the semiconductor material undergoes heating and heat preservation treatment, open the cover plate 11, put it into the interior of the furnace body 1 through a hoisting device and place it on the turntable 23, and then close the cover plate 11. Then open the second solenoid valve 31 and start the pump body 17. The pump body 17 performs negative pressure adsorption on the semiconductor material through the first air duct 15, the telescopic tube 13, the suction box 12, the suction channel 8, the ventilation ring groove 26, the gas channel 30, the air cavity 32 and the round hole 10, and then close the second solenoid valve 31 to fix it on the turntable 23.

[0068] The pump body 17 conveys cooling gas into the interior of the intake passage 3 through the second air duct 18, the air box 19, the U-shaped tube 20, the third air duct 21, the connector 22 and the intake groove 2. The cooling gas is sprayed onto the semiconductor material from the first jet groove 4 and the second jet groove 5; and because the second jet groove 5 is inclinedly distributed, the cooling gas acts on the semiconductor material at a certain inclined angle, expanding the coverage area of the cooling gas and increasing the flow velocity of the cooling gas; in addition, multiple second jet grooves 5 are evenly distributed on both sides of the first jet groove 4 to ensure the heat dissipation range; and the air outlet directions of multiple second jet grooves 5 on the same side of the first jet groove 4 are close, and there will be no chaotic wind direction resulting in difficult heat discharge, improving the efficiency of cooling.

[0069] Since the width of the intake passage 3 gradually increases in the direction away from the intake slot 2, the cooling gas can ensure the uniformity of the gas entering the interior of the intake passage 3 under the influence of factors such as friction and the conveying path, thereby ensuring the uniformity of the air supply of the plurality of second jet slots 5.

[0070] During this process, the pump body 17 also sucks the high-temperature gas inside the furnace body 1 through the first air duct 15, the telescopic pipe 13, the suction box 12, the suction passage 8 and the suction slot 9 to realize the gas circulation inside the furnace body 1 and accelerate the discharge of heat;

[0071] Considering that the path of the suction slot 9 at the bottom position is relatively long and the width of the suction passage 8 gradually increases from top to bottom, the uniformity of suction is ensured.

[0072] During suction, impurities such as dust outside the semiconductor material and inside the furnace body 1 will be sucked into the interior of the processing box 16 for filtration treatment.

[0073] During air outlet, since the inner diameter of the second jet slot 5 gradually decreases in the direction away from the intake passage 3, the flow rate of the cooling gas increases during the ejection process, enhancing the heat dissipation effect.

[0074] In addition, when the cooling gas is ejected from the second jet slot 5, it will cause the elastic strip 6 to oscillate, and then cause the cooling gas to oscillate, further expanding the coverage range.

[0075] Since the air outlet directions of the plurality of second jet slots 5 on the same side of the first jet slot 4 are close, and the inner wall of the furnace body 1 is in an arc-shaped structure, referring to Figure 7 , when the cooling gas is ejected from the second jet slot 5 at the right side position, part of the gas will blow towards the second jet slot 5 at the left side position, and the baffle 7 is provided to prevent the air flow from interfering with the air outlet direction of the second jet slot 5. At the same time, the cooling gas will blow towards the semiconductor material along the inclined surface of the baffle 7, improving the utilization efficiency of the cooling gas.

[0076] After cooling for a certain time, the motor 25 is started, and the semiconductor material is driven to rotate through the turntable 23, and the other positions of the semiconductor material are cooled according to the above steps. The segmented full cooling can ensure the cooling effect.

[0077] And during the cooling process, the first solenoid valve 29 is opened, and then the heat at the bottom position of the semiconductor material is sucked through the square opening 28 and the suction ring groove 27.

Claims

1. An annealing furnace device for semiconductor processing, comprising a furnace body (1), characterized in that: The furnace body (1) is provided with a ventilation assembly, the ventilation assembly comprising an air inlet groove (2), an air inlet channel (3), a first air jet groove (4), a second air jet groove (5) and a suction groove (9), a plurality of the second air jet grooves (5) are provided, the air inlet groove (2) is provided on the outer wall of the furnace body (1), and the air inlet groove (2) is used to transport cooling gas, the air inlet channel (3) is provided inside the wall of the furnace body (1), the air inlet channel (3) is in an arc shape and is connected to the air inlet groove (2), the width of the air inlet channel (3) gradually increases in a direction away from the air inlet groove (2), the first air jet groove (4) is provided on the inner wall of the furnace body (1), the second air jet groove (5) is provided with a plurality of the second air jet grooves (5), the air inlet groove (2) is provided on the outer wall of the furnace body (1), and ... inner wall of the furnace body (1), and the second air jet groove (5) is provided with a plurality of the second air jet grooves (5), the air inlet groove (2) is provided with a plurality of the second air jet grooves (5) An air jet groove (4) is connected to the middle section of the air inlet channel (3); the suction groove (9) is provided on the inner wall of the furnace body (1); the suction groove (9) and the first air jet groove (4) are symmetrically distributed about the axis of the furnace body (1); the second air jet groove (5) is provided on the inner wall of the furnace body (1); the second air jet groove (5) is obliquely distributed and connected to the air inlet channel (3); a plurality of second air jet grooves (5) are evenly distributed on both sides of the first air jet groove (4); the inner diameter of the second air jet groove (5) gradually decreases in a direction away from the air inlet channel (3); and a wind component and a connecting component that cooperate with the air inlet groove (2) and the suction groove (9) are provided on the furnace body (1).

2. The annealing furnace device for semiconductor processing according to claim 1, characterized in that: The ventilation components are arranged in multiple groups, and the multiple groups of ventilation components are distributed at equal distances.

3. The annealing furnace device for semiconductor processing according to claim 2, characterized in that: The connecting component comprises a suction channel (8), a suction box (12) and a telescopic tube (13); the suction channel (8) is opened inside the wall of the furnace body (1) and is distributed along the height direction of the furnace body (1); the width of the suction channel (8) gradually increases from top to bottom; a plurality of suction grooves (9) are connected to the suction channel (8); the suction box (12) is fixedly connected to the top of the furnace body (1); the suction channel (8) is connected to the suction box (12); and the telescopic tube (13) is connected to the suction box (12).

4. The annealing furnace device for semiconductor processing according to claim 3, characterized in that: The connecting component further comprises a U-shaped tube (20), a third air duct (21) and a connector (22); the U-shaped tube (20) is fixedly connected to the outer wall of the furnace body (1); the U-shaped tube (20) is connected to the connector (22) via the third air duct (21); and the connector (22) is connected to the air inlet groove (2).

5. The annealing furnace device for semiconductor processing according to claim 4, characterized in that: The wind power assembly comprises a support plate (14), a first air duct (15), a processing box (16), a pump body (17), a second air duct (18) and a wind box (19); the support plate (14) is fixedly connected to the outer wall of the furnace body (1); the processing box (16) and the pump body (17) are both fixedly connected to the support plate (14); an air inlet end of the pump body (17) is in communication with the processing box (16); one end of the first air duct (15) is in communication with the telescopic tube (13); the other end of the first air duct (15) is in communication with the processing box (16); the wind box (19) is fixedly connected to the outer wall of the furnace body (1); a plurality of U-shaped tubes (20) are all in communication with the wind box (19); one end of the second air duct (18) is in communication with the air outlet end of the pump body (17); and the other end of the second air duct (18) is in communication with the wind box (19).

6. The annealing furnace device for semiconductor processing according to claim 5, characterized in that: A groove (24) is provided on the upper surface of the bottom of the furnace body (1), a motor (25) is fixedly connected inside the groove (24), a turntable (23) is fixedly connected to the driving shaft of the motor (25), the turntable (23) is slidably fitted on the inner wall of the furnace body (1), a ventilation ring groove (26) is provided on the outer ring of the turntable (23), the ventilation ring groove (26) is communicated with the suction channel (8), a suction ring groove (27) is provided on the upper surface of the turntable (23), the suction ring groove (27) is communicated with the ventilation ring groove (26) through a square opening (28), and a first solenoid valve (29) is fixedly installed inside the square opening (28).

7. The annealing furnace device for semiconductor processing according to claim 6, characterized in that: An air cavity (32) is provided inside the rotating disk (23), a circular hole (10) is provided on the upper surface of the rotating disk (23), the circular hole (10) is in communication with the air cavity (32), the air cavity (32) is in communication with the ventilation ring groove (26) through a gas channel (30), a second solenoid valve (31) is fixedly installed inside the gas channel (30), and a pressure sensor is fixedly installed inside the air cavity (32).

8. The annealing furnace device for semiconductor processing according to claim 1, characterized in that: An elastic strip (6) is fixedly arranged inside the second air-jet slot (5), and the elastic strip (6) is S-shaped.

9. The annealing furnace device for semiconductor processing according to claim 1, characterized in that: A stopper (7) is fixedly connected to the inner wall of the furnace body (1), the stopper (7) is provided in plurality, the plurality of stoppers (7) are distributed in a one-to-one correspondence with the plurality of second air-jet slots (5), and the stoppers (7) are in a triangular structure.

10. The annealing furnace device for semiconductor processing according to claim 1, characterized in that: The top of the furnace body (1) is sealed with a cover plate (11).

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