Packaging and processing method and device for ceramic substrate components

Abstract

The present invention discloses a packaging processing method and device for ceramic substrate components. The packaging processing method includes opening a solder pad groove on the front copper layer of the ceramic substrate, sequentially placing a heat sink, a large solder pad and the ceramic substrate in the groove in the center of the reflow laminating carrier, placing a small solder pad in the solder pad groove and placing the inner leads of the frame in the area above the solder pad groove, then covering with a metal cover plate, and performing formic acid treatment, hot air reflow and vacuum pumping in a heating environment. The obtained initial product with a solder welding layer is encapsulated to form an encapsulation body, and the outer frame leads of the encapsulation body are trimmed and formed to obtain the device. In the above packaging processing method, by setting a solder pad groove to place the small solder pad and setting a boss to define the position of the large solder pad, the risk of solder pad drift is greatly reduced, ensuring that there is sufficient solder infiltration and wrapping between the back of the inner leads of the frame after laminating and the ceramic substrate, and greatly improving the heat dissipation performance and reliability of the processed device.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic device packaging, and particularly to a packaging processing method and device for ceramic substrate components. Background Art

[0002] The ceramic substrate is composed of a front copper layer, a back copper layer and a ceramic layer. In order to firmly and evenly weld and fix the inner pins in the metal frame to the front copper layer and the radiator to the back copper layer, it is necessary to set small solder pads between the front copper layer and the metal frame, set large solder pads between the back copper layer and the radiator, and perform heating and reflux in a reflow furnace. However, in the existing technical methods, after the components are assembled, affected by the vibration or impact during the handling process, as well as the vibration and air flow in the reflow furnace, some small solder pads are prone to position deviation before melting. Some of the melted small solder pads continue to flow under the action of the vibration and air flow in the reflow furnace, and combined with the discharge of air bubbles in the molten welding material during the reflux and vacuum pumping processes, resulting in the up and down fluctuation of the ceramic substrate, and problems such as uneven solder thickness, position deviation, insufficient wetting, and unstable tin climbing height on each side of the inner pin between the back of the inner pin in the frame and the front copper layer of the ceramic substrate may occur (as Figure 1 and Figure 2 shown, it can be clearly seen that the solder wetting is insufficient after the welding treatment, including the frame, solder, front copper layer, back copper layer, ceramic layer, and ceramic substrate); the occurrence of the above problems reduces the bonding strength, conductivity and reliability between the inner pins in the frame and the front copper layer of the ceramic substrate; similarly, it is difficult to precisely control the thickness of the solder between the ceramic substrate and the radiator during the heating and reflux process after assembly, affecting the heat dissipation performance and reliability of the device. Therefore, there are problems of poor welding quality when welding the ceramic substrate with the metal frame and the radiator in the existing technical methods. Summary of the Invention

[0003] The embodiments of the present invention provide a packaging processing method and device for ceramic substrate components, aiming to solve the problem of poor welding quality when welding the ceramic substrate with the metal frame and the radiator in the existing technical methods.

[0004] In a first aspect, the embodiments of the present application provide a packaging processing method for ceramic substrate components, wherein the packaging processing method includes:

[0005] Opening a solder pad groove in the welding area of the inner pins of the frame corresponding to the front copper layer of the ceramic substrate; the solder pad groove includes a connected solder pad groove and / or an independent single solder pad groove; islands are provided in the center of some of the connected solder pad grooves, and islands are provided in the center of some of the single solder pad grooves;

[0006] Place the heat sink in the groove at the center of the reflow bonding carrier, and then place the large solder pad with solder pad vias on the top surface of the heat sink;

[0007] After printing the bonding material on the surface of the ceramic substrate, mounting the chips, and soldering the metal wires, place the ceramic substrate on the top surface of the large solder pad. The back surface of the ceramic substrate is provided with bosses corresponding to the solder pad vias; the thickness of the large solder pad is greater than the height of the bosses;

[0008] Assemble small solder pads matching the shape of the solder pad grooves into the solder pad grooves. Some of the small solder pads are provided with island vias adapted to the islands; the thickness of the small solder pads is greater than the depth of the solder pad grooves;

[0009] Assemble the frame into the groove at the center of the reflow bonding carrier. The inner leads of the frame are placed in the area above the solder pad grooves or in contact with the surface of the islands on the ceramic substrate;

[0010] Cover the metal cover plate above the frame and fixedly connect the metal cover plate to the flange of the reflow bonding carrier to obtain a bonded structural component; the outer edge of the frame is clamped and fixed between the metal cover plate and the flange of the reflow bonding carrier;

[0011] Place the bonded structural component in a formic acid vacuum reflow furnace, and perform formic acid treatment, hot air reflow, and vacuum pumping on the bonded structural component in a heating environment, so as to form solder welding layers both between the inner leads of the frame and the front copper layer of the ceramic substrate and between the front surface of the heat sink and the back copper layer of the ceramic substrate; the temperature of the heating environment is higher than the melting points of the large solder pad and the small solder pads;

[0012] Plastic-seal the initial product with a solder welding layer to form a plastic-sealed body, and perform lead trimming and forming on the outer frame leads of the plastic-sealed body to obtain the final device.

[0013] In a second aspect, an embodiment of the present application further provides a device, wherein the device is processed by using the packaging processing method described in the first aspect above, and the device includes a ceramic substrate, a heat sink, a frame, and a plastic-sealed body;

[0014] The ceramic substrate includes a front copper layer, a back copper layer, and a ceramic layer sandwiched between the front copper layer and the back copper layer;

[0015] The front copper layer is provided with solder pad grooves, and the inner pins of the frame extend deep above the solder pad grooves and are tightly welded to the solder pad grooves through a solder welding layer; the solder pad grooves include connected solder pad grooves and / or independent single solder pad grooves; an elongated groove communicating with each other is provided between adjacent solder pad grooves in the connected solder pad grooves, islands are arranged in the center of some of the connected solder pad grooves, islands are arranged in the center of some of the single solder pad grooves, and the top surface of the island abuts against the inner pins of the frame;

[0016] The back copper layer is provided with a boss, and a solder welding layer for tightly welding the radiator and the back copper layer is filled in the gap between the boss and the top surface of the radiator;

[0017] The chip is bonded to the upper end surface of the front copper layer through a bonding material, and the chip and the front copper layer are electrically connected through metal wires;

[0018] The plastic package is wrapped outside the combination formed by the ceramic substrate, the radiator, the chip, and the metal wires, and the outer edge of the frame extends outwards from the plastic package.

[0019] The embodiment of the present invention provides a packaging and processing method and device for ceramic substrate components. The packaging and processing method includes opening solder pad grooves in the front copper layer of the ceramic substrate, placing the radiator, the large solder pad, and the ceramic substrate in the groove in the center of the reflow laminating carrier in sequence, placing the small solder pad in the solder pad grooves, placing the inner pins of the frame in the area above the solder pad grooves and then covering with a metal cover, placing in a heating environment for formic acid treatment, hot air reflow, and vacuum pumping, performing plastic packaging on the obtained initial product with a solder welding layer to form a plastic package, and performing lead cutting and forming on the outer frame pins of the plastic package to obtain the device. In the above packaging and processing method, by setting solder pad grooves to place small solder pads and setting bosses to define the positions of the large solder pads, the risk of solder pad drift is greatly reduced. When the solder pads are melted to form liquid solder, they are stably controlled in the connected solder pad grooves or single solder pad grooves until they solidify, ensuring that there is sufficient solder infiltration and wrapping between the back of the inner pins of the frame after laminating and the ceramic substrate, and the solder thickness is precisely controlled and more uniform; since the liquid solder is gathered in the connected solder pad grooves or single solder pad grooves, its surface tension causes the liquid solder to climb onto the four sides of the inner pins of the frame, thereby greatly improving the welding strength and solder volume between the inner pins of the frame and the ceramic substrate, and also ensuring the electrical characteristics and device reliability between the inner pins of the frame and the front of the ceramic substrate; at the same time, a controllable solder thickness is also formed between the back of the ceramic substrate and the front of the radiator through the bosses, greatly improving the heat dissipation performance and reliability of the processed device. Description of the Drawings

[0020] To more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0021] Figure 1 Front view structure diagram of a device processed by an existing technology method;

[0022] Figure 2 Side view structure diagram of a device processed by an existing technology method;

[0023] Figure 3 Method flow chart of the packaging and processing method for ceramic substrate components provided by the embodiments of the present invention;

[0024] Figure 4 Front view structure diagram of the ceramic substrate provided by the embodiments of the present invention;

[0025] Figure 5 Side view structure diagram of the ceramic substrate provided by the embodiments of the present invention;

[0026] Figure 6 Front view structure diagram of another ceramic substrate provided by the embodiments of the present invention;

[0027] Figure 7 Side view structure diagram of another ceramic substrate provided by the embodiments of the present invention;

[0028] Figure 8 Partial structure diagram of the device provided by the embodiments of the present invention;

[0029] Figure 9 Front view structure diagram of yet another ceramic substrate provided by the embodiments of the present invention;

[0030] Figure 10 Side view structure diagram of yet another ceramic substrate provided by the embodiments of the present invention;

[0031] Figure 11 Front view structure diagram of still another ceramic substrate provided by the embodiments of the present invention;

[0032] Figure 12 Side view structure diagram of still another ceramic substrate provided by the embodiments of the present invention;

[0033] Figure 13 Front view structure diagram of the device provided by the embodiments of the present invention;

[0034] Figure 14 Back view structure diagram of the ceramic substrate provided by the embodiments of the present invention;

[0035] Figure 15 Cross-sectional structure diagram of the ceramic substrate provided by the embodiment of the present invention;

[0036] Figure 16 Another partial structure diagram of the device provided by the embodiment of the present invention;

[0037] Figure 17 Structure diagram of the heat sink provided by the embodiment of the present invention;

[0038] Figure 18 Structure diagram of the large solder pad provided by the embodiment of the present invention;

[0039] Figure 19 Structure diagram of the small solder pad provided by the embodiment of the present invention;

[0040] Figure 20 Structure diagram of the frame provided by the embodiment of the present invention;

[0041] Figure 21 Schematic diagram of the processing process of the device provided by the embodiment of the present invention;

[0042] Figure 22 Another schematic diagram of the processing process of the device provided by the embodiment of the present invention;

[0043] Figure 23 Another schematic diagram of the processing process of the device provided by the embodiment of the present invention;

[0044] Figure 24 Partial structure diagram of the device provided by the embodiment of the present invention.

[0045] Reference numerals: 1, ceramic substrate; 2, heat sink; 3, frame; 4, plastic package; 12, front copper layer; 13, back copper layer; 11, ceramic layer; 5, solder; 121, solder pad groove; 122, islet; 61, reflow bonding carrier; 7, large solder pad; 8, chip; 81, metal wire; 71, solder pad through hole; 131, boss; 14, small solder pad; 141, islet through hole; 31, inner lead; 62, metal cover plate. Detailed implementation manners

[0046] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0047] It should be understood that when used in this specification and the appended claims, the terms "comprising" and "including" indicate the presence of the described features, wholes, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or their combinations.

[0048] It should also be understood that the terms used in the specification of the present invention are for the purpose of describing specific embodiments only and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms. It should be further understood that the term "and / or" used in the specification of the present invention and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0049] Please refer to Figure 3 , as shown in the figure, an embodiment of the present application discloses a packaging and processing method for ceramic substrate components. Among them, the packaging and processing method includes steps S110 to S180.

[0050] S110. Open a solder pad groove in the lead welding area within the frame corresponding to the front copper layer of the ceramic substrate.

[0051] Open a solder pad groove 121 in the lead 31 welding area within the frame 3 corresponding to the front copper layer 12 of the ceramic substrate 1. Among them, the solder pad groove 121 includes a connected solder pad groove and / or an independent single solder pad groove; an island 122 is provided in the center of some of the connected solder pad grooves, and an island 122 is provided in the center of some of the single solder pad grooves.

[0052] The ceramic substrate 1 is obtained by laminating and combining a front copper layer 12, a ceramic layer 11, and a back copper layer 13. Among them, the front copper layer 12 needs to be welded to the inner leads of the frame 3. Therefore, a solder pad groove 121 can be opened in the welding area corresponding to the inner leads 31 of the front copper layer 12 and the frame 3. The solder pad groove 121 opened on the front copper layer 12 is as Figures 4 to 7 shown. Among them, Figure 4 and Figure 5 schematically show a connected solder pad groove formed by combining three sequentially arranged solder pad grooves 121. A slender groove (the slender groove is used to balance the amount of molten solder in each groove of the connected solder pad groove) is provided between adjacent solder pad grooves 121 in the connected solder pad groove. Figure 6 and Figure 7 schematically show a single solder pad groove formed by one solder pad groove 121, and two single solder pad grooves are arranged side by side.

[0053] Furthermore, an island 122 can be provided in the center of some of the connected solder pad grooves, and the specific setting structure is asFigure 9 and Figure 10 As shown in FIG. 1 , the island 122 is a protrusion formed by the upward bulge of the concave cavity in the center of the soldering slot 121 in the conjoined soldering slot. In the specific embodiment of the present application, an island 122 is provided in each of the two soldering slots 121 at both ends of the conjoined soldering slot. The island 122 can also be provided in the center of some single soldering slots. The specific configuration structure is as follows: Figure 11 and Figure 12 As shown, the island 122 is a protrusion formed by the upward protrusion of the concave cavity in the center of the single soldering slot. Specifically, the island 122 can be set to be circular, elliptical or polygonal.

[0054] S120, placing the heat sink in the groove in the center of the reflow wafer carrier, and then placing a large solder sheet with solder sheet through holes on the top surface of the heat sink.

[0055] Place the heat sink 2 in the groove in the center of the reflow wafer carrier 61, and then place the large solder piece 7 with the solder piece through hole 71 on the top surface of the heat sink 2. Place the heat sink 2 in the groove in the center of the reflow wafer carrier 61, then the heat sink 2 is placed at the bottom layer of the groove in the reflow wafer carrier 61, and the large solder piece 7 with the solder piece through hole 71 is placed on the top surface of the heat sink 2.

[0056] S130, after printing the adhesive material on the surface of the ceramic substrate, mounting the chip, and welding the metal wire, the ceramic substrate is placed on the top surface of the large welding sheet.

[0057] After printing the adhesive material on the surface of the ceramic substrate 1, mounting the chip 8, and welding the metal wire 81, the ceramic substrate 1 is placed on the top surface of the large soldering piece 7. The back of the ceramic substrate 1 is provided with a boss 131 corresponding to the soldering piece through hole 71; the thickness of the large soldering piece 7 is greater than the height of the boss 131.

[0058] After step 110, the surface of the ceramic substrate obtained by processing is printed with adhesive material, and the adhesive material is laid in the central area of ​​the front copper layer, and the chip is attached to the adhesive material, so as to achieve a stable mounting of the chip; then the metal wires are welded between the chips and between the chip and the front copper layer. After the chip mounting and metal wire welding are completed, the ceramic substrate can be placed on the top surface of the large soldering piece. In order to limit the large soldering piece through the ceramic substrate, a boss can be set on the back copper layer of the ceramic substrate, the boss is matched with the soldering piece through hole on the large soldering piece, and the thickness of the large soldering piece is set to be greater than the height of the boss.

[0059] Among them, the outer dimension of the large solder pad 7 is larger than the outer dimension of the back copper layer 13 of the ceramic substrate 1; the large solder pad 7 is a rectangular solder pad, and solder pad through holes 71 are provided at the four top corners of the large solder pad 7. Further, the horizontal distance between the inner wall of the solder pad through hole 71 and the side wall of the boss 131 is 0.10 - 0.20 mm; the horizontal distance between the outer side wall of the large solder pad 7 and the outer side wall of the ceramic substrate 1 is 0.05 - 0.10 mm. The thickness of the large solder pad 7 is 0.05 - 0.10 mm larger than the height of the boss 131.

[0060] The outer dimension of the large solder pad 7 is larger than the outer dimension of the back copper layer 13 of the ceramic substrate 1. Specifically, the horizontal distance between the outer side wall of the large solder pad 7 and the outer side wall of the ceramic substrate 1 can be set to 0.05 - 0.10 mm, that is, the periphery of the ceramic substrate 1 is 0.05 - 0.10 mm wider than the periphery of the large solder pad 7.

[0061] Further, the large solder pad 7 can be set as a rectangular solder pad, and solder pad through holes 71 are provided at the four top corners of the large solder pad 7, then bosses 131 are also provided at the four top corners of the corresponding back copper layer 13 of the ceramic substrate 1. The specific structure of the back copper layer 13 of the ceramic substrate 1 is as Figure 14 and Figure 15 shown. The specific structure of the large solder pad 7 is as Figure 18 shown, and the specific structure of the heat sink 2 is as Figure 17 shown.

[0062] Further, the horizontal distance between the inner wall of the solder pad through hole and the side wall of the boss can be set to 0.10 - 0.20 mm, and the outer dimension of the solder pad through hole is larger than the outer dimension of the boss.

[0063] Further, to improve the welding quality of the solder welding layer, the thickness of the large solder pad can be set to be 0.05 - 0.10 mm larger than the height of the boss.

[0064] S140: Assemble small solder pads matching the shape of the solder pad groove into the solder pad groove, and island through holes adapted to the islands are provided on some of the small solder pads.

[0065] Assemble small solder pads 14 matching the shape of the solder pad groove 121 into the solder pad groove 121, and island through holes 122 adapted to the islands 122 are provided on some of the small solder pads 14. Among them, the thickness of the small solder pad 14 is larger than the depth of the solder pad groove 121.

[0066] Further, assemble small solder pads 14 matching the shape of the solder pad groove 121 into the solder pad groove 121. Among them, the specific structure of the small solder pad 14 is as Figure 19As shown, a one-piece small welding piece is placed in the one-piece welding piece groove, and a one-piece small welding piece is placed in the one-piece welding piece groove. Among them, the small welding piece 14 is a small welding piece 14 with a through hole of an isolated island 122 or a small welding piece 14 without a through hole of an isolated island 122. The small welding piece 14 with a through hole of an isolated island 122 is adapted to the welding piece groove 121 with the isolated island 122, and the small welding piece 14 without a through hole of an isolated island 122 is adapted to the welding piece groove 121 without the isolated island 122. The depths of the welding piece grooves 121 are all equal, and the thickness of the small welding piece 14 is greater than the depth of the welding piece grooves 121; specifically, the thickness of the small welding piece 14 is 0.02 to 0.05 mm greater than the depth of the welding piece grooves 121. The combined structure formed by placing the small welding piece 14 in the welding piece groove 121 and combining it with the frame 3 is as shown in FIG. Figure 8 and Figure 16 shown.

[0067] Specifically, the outer dimensions of the small solder tab 14 are smaller than the outer dimensions of the solder tab slot 121, and the horizontal spacing between the outer side wall of the small solder tab 14 and the inner side wall of the solder tab slot 121 can be set to 0.2 mm, that is, the outer periphery of the solder tab slot 121 is 0.2 mm wider than the small solder tab 14. The size of the small solder tab 14 can be set based on the edges of each solder tab slot 121, for example, the width of the solder tab slot 121 is X and the length is Y, the width of the small solder tab 14 is X1 and the length is Y1, then X=X1+0.2×2mm, Y=Y1+0.2×2mm.

[0068] S150, assembling the frame into the groove in the center of the reflow wafer carrier.

[0069] The frame 3 is assembled in the groove in the center of the reflow wafer carrier 61. The inner pin 31 of the frame 3 is placed in the area above the solder slot 121 or in contact with the surface of the island 122 on the ceramic substrate 1. The inner pin 31 of the frame 3 can be properly recessed and processed. The recessed inner pin 31 can be used to make the back of the inner pin 31 of the frame 3 directly contact the front copper layer 12 of the ceramic substrate 1, and can make the inner pin 31 of the frame 3 contact the surface of the island 122 on the ceramic substrate 1. The structure of the frame 3 is as follows: Figure 20 shown.

[0070] S160, covering the frame with a metal cover plate and fixing the metal cover plate to a flange of the reflow wafer assembly carrier to obtain a wafer assembly structure.

[0071] Cover the metal cover plate 62 above the frame 3 and fixedly connect the metal cover plate 62 to the flange of the reflow chip carrier 61 to obtain a chip bonding structure. Among them, the outer edge of the frame 3 is clamped and fixed between the metal cover plate 62 and the flange of the reflow chip carrier 61. The device structures to be encapsulated are chip-bonded together through the reflow chip carrier 61 and the metal cover plate 62, so as to obtain a chip bonding structure. The specific structure of the chip bonding structure is as Figure 21 shown.

[0072] S170: Place the chip bonding structure in a formic acid vacuum reflow furnace, and perform formic acid treatment, hot air reflow and vacuum pumping on the chip bonding structure in a heating environment, so as to form solder welding layers between the inner pins of the frame and the front copper layer of the ceramic substrate, and between the front of the heat sink and the back copper layer of the ceramic substrate.

[0073] Place the chip bonding structure in a formic acid vacuum reflow furnace, and perform formic acid treatment, hot air reflow and vacuum pumping on the chip bonding structure in a heating environment, so as to form solder welding layers between the inner pins 31 of the frame 3 and the front copper layer 12 of the ceramic substrate 1, and between the front of the heat sink 2 and the back copper layer 13 of the ceramic substrate 1. Among them, the temperature of the heating environment is higher than the melting points of the large solder pads 7 and the small solder pads 14.

[0074] Further, place the laminated structural member obtained by lamination into a formic acid vacuum reflux furnace, and perform formic acid treatment, hot air reflux, and vacuum pumping on the laminated structural member under a heating environment. At high temperature, the small solder pads 14 melt into liquid solder 5, and the liquid solder 5 converges in the connected solder pad grooves and / or single solder pad grooves. There are connected slender grooves between adjacent solder pad grooves 121 in the connected solder pad grooves to balance the amount of molten solder in each groove of the connected solder pad grooves. The back surface of the pins 31 in the frame 3 is wetted and wrapped by the solder 5; under the action of the surface tension of the liquid solder 5, the liquid solder 5 continuously climbs and bites onto the four sides of the pins 31 in the frame 3. At the same time, the large solder pads 7 also melt into liquid solder 5 at high temperature. Under the gravity of the metal cover plate 62 and the frame 3, not only does the back surface of the pins 31 in the frame 3 tightly press against the surface of the islands 122 in the connected solder pad grooves and / or single solder pad grooves, but also the gravity of the metal cover plate 62 and the frame 3 is transmitted through the pins 31 in the frame 3 and the ceramic substrate 1 and tightly presses against the front surface of the heat sink 2. Thus, during the reflux and vacuum pumping processes, the pins 31 in the frame 3 always tightly press against the ceramic substrate 1, and the ceramic substrate 1 always closely adheres to the front surface of the heat sink 2. After leaving the furnace, a uniform solder thickness and solder wetting rate are formed between the pins 31 in the frame 3 and the ceramic substrate 1, and there is solder climbing and biting on the four side surfaces around the pins 31 in the frame 3, forming a firm solder welding layer, ensuring that there is sufficient solder wetting and wrapping between the back surface of the pins 31 in the frame 3 after lamination and the copper layer 12 on the front surface of the ceramic substrate 1, and the solder thickness is also stably controlled (i.e., the depth of the solder pad grooves 121), thereby effectively improving the welding strength, electrical connection, and reliability between the pins 31 in the frame 3 and the copper layer 12 on the front surface of the ceramic substrate 1; at the same time, a controllable solder thickness is also formed between the copper layer 13 on the back surface of the ceramic substrate 1 and the front surface of the heat sink 2 through the bosses 131. The combined structure formed after the above process is as shown in Figure 22 shown. Take out the initial product from the reflux lamination carrier 61, and the structure of the obtained initial product is as shown in Figure 23 shown.

[0075] S180. Plastic-seal the initial product forming the solder welding layer to form a plastic-sealed body, and perform lead forming on the pins of the outer frame of the plastic-sealed body to obtain the final device.

[0076] Plastic-seal the initial product forming the solder welding layer to form a plastic-sealed body 4, and perform lead forming on the pins of the outer frame of the plastic-sealed body 4 to obtain the final device. Plastic-seal the initial product forming the solder welding layer to form a plastic-sealed body 4, then the plastic-sealed body 4 wraps around the outside of the combined body formed by the ceramic substrate 1, the heat sink 2, the chip 8, and the metal wire 81, and the outer edge of the frame 3 extends outward from the plastic-sealed body 4. The partial structure of the final finished device obtained after performing lead forming on the pins of the outer frame of the plastic-sealed body 4 is as shown in Figure 24 shown.

[0077] An embodiment of the present invention further provides a device, which is processed by using the packaging and processing method described in the above embodiment, such as Figure 23 and Figure 24 As shown, the device includes a ceramic substrate 1, a chip 8, a wire, a heat sink 2, a frame 3 and a plastic package 4; the ceramic substrate 1 includes a front copper layer 12, a back copper layer 13, and a ceramic layer 11 sandwiched between the front copper layer 12 and the back copper layer 13; a solder pad groove 121 is formed on the front copper layer 12, and the inner lead 31 of the frame 3 extends deep above the solder pad groove 121 and is tightly welded to the solder pad groove 121 through a solder welding layer, and the solder welding layer is also the solder 5 shown in the drawing; the solder pad groove 121 includes a continuous solder pad groove and / or an independent single solder pad groove; islands 122 are provided in the center of some of the continuous solder pad grooves, and islands 122 are provided in the center of some of the single solder pad grooves, and the top surface of the island 122 abuts against the inner lead 31 of the frame 3; a boss 131 is provided on the back copper layer 13, and a solder welding layer for tightly welding the heat sink 2 and the back copper layer 13 is filled in the gap between the boss 131 and the top surface of the heat sink 2; the chip 8 is bonded to the upper end surface of the front copper layer 12 through an adhesive material, and the chip 8 is electrically connected to the front copper layer 12 through a metal wire 81; the plastic package 4 is wrapped outside the combination formed by the ceramic substrate 1, the heat sink 2, the chip 8, and the metal wire 81, and the outer edge of the frame 3 extends outwards from the plastic package 4.

[0078] In a more specific embodiment, the solder pad grooves 121 are provided on both sides of the front copper layer 12 of the ceramic substrate 1 to form two rows of parallel solder pad grooves; and the number of the solder pad grooves 121 provided with islands 122 is not less than three; at least one island 122 is provided in each row of solder pad grooves; the two continuous solder pad grooves provided with islands 122 in one row of solder pad grooves are respectively provided at both ends of the row of solder pad grooves; and the two islands 122 in the continuous solder pad groove are respectively provided in the solder pad grooves 121 at both ends of the continuous solder pad groove; the two single solder pad grooves provided with islands 122 in one row of solder pad grooves are respectively provided at both ends of the row of solder pad grooves. The specific structure is as Figure 13 shown.

[0079] Specifically, the number of the solder pad grooves 121 of the island 122 is not less than three, that is, the number of the islands 122 provided is not less than three. And at least one island 122 is provided in each row of solder pad grooves. The two continuous solder pad grooves provided with islands 122 in the same row of solder pad grooves are respectively provided at both ends of the row of solder pad grooves. For example Figure 13A row of solder pad grooves on the right side of the [object] contains two connected solder pad grooves with islands 122 provided therein. These two connected solder pad grooves with islands 122 are respectively located at both ends of this row of solder pad grooves. If there are two islands 122 provided in the connected solder pad groove, the two islands 122 are respectively provided in the solder pad grooves 121 at both ends of the connected solder pad groove. For example Figure 13 In the solder pad grooves at both ends of a connected solder pad groove in a row of solder pad grooves on the left side of the [object], one island 122 is provided in each.

[0080] Two single solder pad grooves with islands 122 provided in a row of solder pad grooves are respectively located at both ends of this row of solder pad grooves. As Figure 13 shown, a row of solder pad grooves on the left side contains two single solder pad grooves with islands 122 provided therein, and the two single solder pad grooves with islands 122 provided therein are respectively located at both ends of this row of solder pad grooves.

[0081] In the packaging and processing method and device for ceramic substrate components provided in the embodiments of the present invention, the packaging and processing method includes opening solder pad grooves in the front copper layer of the ceramic substrate, sequentially placing a heat sink, a large solder pad and the ceramic substrate in the groove in the center of the reflow laminating carrier, placing small solder pads in the solder pad grooves, placing the inner leads of the frame in the area above the solder pad grooves, and then covering with a metal cover plate, and performing formic acid treatment, hot air reflow and vacuum pumping in a heating environment, performing plastic encapsulation on the obtained initial product with a solder welding layer formed thereon to form a plastic encapsulated body, and performing lead trimming and forming on the outer frame leads of the plastic encapsulated body to obtain the device. In the above-mentioned packaging and processing method, by providing solder pad grooves to place small solder pads and providing bosses to define the positions of the large solder pads, the risk of solder pad drift is greatly reduced. When the solder pads are melted to form liquid solder, they are stably controlled in the connected solder pad grooves or single solder pad grooves until solidification, ensuring that there is sufficient solder infiltration and wrapping between the back surface of the inner leads of the frame after laminating and the ceramic substrate, and the solder thickness is precisely controlled and more uniform; since the liquid solder is gathered in the connected solder pad grooves or single solder pad grooves, its surface tension causes the liquid solder to climb onto the four sides of the inner leads of the frame, thereby greatly improving the welding strength and solder volume between the inner leads of the frame and the ceramic substrate, and also ensuring the electrical characteristics and device reliability between the inner leads of the frame and the front surface of the ceramic substrate; at the same time, a controllable solder thickness is also formed between the back surface of the ceramic substrate and the front surface of the heat sink through the bosses, greatly improving the heat dissipation performance and reliability of the processed device.

[0082] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should all be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A packaging method for ceramic substrate components, characterized in that: The packaging processing method comprises: A soldering slot is provided in the pin welding area of ​​the frame corresponding to the copper layer on the front side of the ceramic substrate; the soldering slot includes a conjoined soldering slot and / or an independent single soldering slot; an island is provided in the center of some of the conjoined soldering slots, and an island is provided in the center of some of the single soldering slots; Place the heat sink in the groove in the center of the reflow wafer carrier, and then place a large solder pad with solder pad through holes on the top surface of the heat sink; After printing the adhesive material on the surface of the ceramic substrate, mounting the chip, and welding the metal wire, the ceramic substrate is placed on the top surface of the large soldering piece, and a boss corresponding to the through hole of the soldering piece is provided on the back of the ceramic substrate; the thickness of the large soldering piece is greater than the height of the boss; Assembling a small soldering piece matching the shape of the soldering piece slot in the soldering piece slot, some of the small soldering pieces are provided with an island through hole matching the island; the thickness of the small soldering piece is greater than the depth of the soldering piece slot; Assemble the frame in the groove in the center of the reflow wafer carrier, with the inner pins of the frame placed in the area above the soldering slot or in contact with the surface of the island on the ceramic substrate; The metal cover plate is covered on the top of the frame and the metal cover plate is fixedly connected to the flange of the reflow wafer carrier to obtain a wafer assembly structure; the outer edge of the frame is clamped and fixed between the metal cover plate and the flange of the reflow wafer carrier; Placing the laminated structure in a formic acid vacuum reflow furnace, subjecting the laminated structure to formic acid treatment, hot air reflow and vacuuming in a heating environment, thereby forming a soldering layer between the inner pins of the frame and the front copper layer of the ceramic substrate and between the front side of the heat sink and the back copper layer of the ceramic substrate; the temperature of the heating environment is higher than the melting points of the large solder piece and the small solder piece; The initial product with the solder welding layer is plastic-sealed to form a plastic-sealed body, and the pins of the outer frame of the plastic-sealed body are cut and formed to obtain the final device.

2. The packaging method for ceramic substrate components according to claim 1, characterized in that: The outer dimensions of the small welding piece are smaller than the outer dimensions of the welding piece groove.

3. The packaging method for ceramic substrate components according to claim 2, characterized in that: The thickness of the small welding piece is 0.02-0.05 mm greater than the depth of the welding piece groove.

4. The packaging method for ceramic substrate components according to any one of claims 1 to 3, characterized in that: The outer dimensions of the large soldering piece are larger than the outer dimensions of the back copper layer of the ceramic substrate.

5. The packaging method for ceramic substrate components according to claim 4, characterized in that: The large welding piece is a rectangular welding piece, and welding piece through holes are arranged at the four top corners of the large welding piece.

6. The packaging method for ceramic substrate components according to claim 5, characterized in that: The horizontal distance between the inner wall of the soldering plate through hole and the side wall of the boss is 0.10-0.20 mm.

7. The packaging method for ceramic substrate components according to claim 4, characterized in that: The horizontal distance between the outer side wall of the large welding piece and the outer side wall of the ceramic substrate is 0.05-0.10 mm.

8. The packaging method for ceramic substrate components according to claim 4, characterized in that: The thickness of the large welding piece is 0.05 to 0.10 mm greater than the height of the boss.

9. A device, characterized in that The device is obtained by using the packaging method according to any one of claims 1 to 8, and the device comprises a ceramic substrate, a heat sink, a frame and a plastic package; The ceramic substrate comprises a front copper layer, a back copper layer, and a ceramic layer sandwiched between the front copper layer and the back copper layer; A soldering slot is provided on the front copper layer, and the inner pin of the frame penetrates into the top of the soldering slot and is tightly welded to the soldering slot through the solder welding layer; the soldering slot includes a conjoined soldering slot and / or an independent single soldering slot; adjacent soldering slots in the conjoined soldering slot are provided with connected elongated grooves, and an island is provided in the center of some of the conjoined soldering slots, and an island is provided in the center of some of the single soldering slots, and the top surface of the island is in contact with the inner pin of the frame; The back copper layer is provided with a boss, and the gap between the boss and the top surface of the heat sink is filled with a solder welding layer for tightly welding the heat sink and the back copper layer; The chip is bonded to the upper end surface of the front copper layer by an adhesive material, and the chip and the front copper layer are electrically connected by a metal wire; The plastic package is wrapped around the outside of a combination of the ceramic substrate, the heat sink, the chip and the metal wire, and the outer edge of the frame extends outward from the plastic package.

10. The device according to claim 9, characterized in that The soldering slots are arranged on both sides of the front copper layer of the ceramic substrate to form two parallel rows of soldering slots; and the number of the soldering slots arranged in the isolated island is not less than three; At least one island is provided in each row of welding lug slots; The two connected soldering slots with isolated islands in a row of soldering slots are respectively arranged at the two ends of the row of soldering slots; and the two isolated islands in the connected soldering slots are respectively arranged in the soldering slots at the two ends of the connected soldering slots; The two single soldering slots of the isolated islands in a row of soldering slots are respectively arranged at the two ends of the row of soldering slots.

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