Process chambers and semiconductor processing equipment

Abstract

The application discloses a process chamber and a semiconductor process equipment, and relates to the field of semiconductor equipment. The process chamber is applied to the semiconductor process equipment, and the process chamber comprises a cavity, a base, a deposition ring, a shielding ring and a first lifting device. The base, the deposition ring and the shielding ring are arranged in the cavity. The deposition ring surrounds the base. The shielding ring is arranged in the inner liner of the cavity in a lifting manner, and at least part of the shielding ring extends to the edge area of the base. The first lifting device comprises a plurality of first lifting members. The first lifting members are connected with the shielding ring respectively, and are used for driving the shielding ring to be close to or away from the base for carrying the wafer. The application can solve the problem of inconsistent film thickness at the back of the wafer or the edge of the front of the wafer.

Description

Technical Field

[0001] This application belongs to the field of semiconductor equipment technology, specifically relating to a process chamber and semiconductor process equipment. Background Technology

[0002] As the feature size of integrated circuit manufacturing processes continues to shrink, the number of transistor circuits per unit area increases exponentially, resulting in more powerful functions. However, while integration density increases significantly, heat sources begin to concentrate on the chip. Chip thinning is a crucial method for reducing thermal resistance and improving heat dissipation and cooling. After integrated circuits are fabricated on the wafer, the back side of the silicon wafer needs to be thinned to achieve the required thickness.

[0003] In the reaction chambers of related technologies, the consistency of film thickness at the edge of the back or front of the wafer cannot be guaranteed throughout the entire target cycle during the wafer processing, thus affecting product performance. Summary of the Invention

[0004] The purpose of this application is to provide a process chamber that can solve problems such as inconsistent film thickness at the edge of the back of the crystal or the front side of the wafer.

[0005] To solve the above-mentioned technical problems, this application is implemented as follows:

[0006] This application provides a process chamber for use in semiconductor process equipment. The process chamber includes: a cavity, a base, a deposition ring, a shielding ring, and a first lifting device.

[0007] The base, the deposition ring, and the shielding ring are all disposed within the cavity. The deposition ring surrounds the base, and the shielding ring is vertically and flexibly disposed within the lining of the cavity. At least a portion of the shielding ring extends to the edge region of the base.

[0008] The first lifting device includes a plurality of first lifting components, which are respectively connected to the shielding ring and are used to move the shielding ring closer to or away from the support surface of the base used to support the wafer.

[0009] This application also provides a semiconductor process apparatus, including the aforementioned process chamber.

[0010] In this embodiment, the first lifting component of the first lifting device can move the shielding ring closer to or further away from the wafer surface on the substrate to adjust the distance between the shielding ring and the wafer surface. Thus, during the process, as the lifespan of the target material is consumed, reactants will be generated on the surface of the shielding ring, affecting the shielding effect of the shielding ring. The first lifting component can move the shielding ring closer to or further away from the wafer surface (or the target material), thereby achieving different shielding effects through shielding rings at different positions to meet different shielding requirements of the process. Furthermore, by adjusting the position of the shielding ring, the consistency of the shielding effect throughout the entire lifespan of the target material can be ensured, thereby ensuring the consistency of the film edge thickness and improving product performance. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of the process chamber in the process state as disclosed in the embodiments of this application;

[0012] Figure 2 This is a schematic diagram of the process chamber in a non-process state as disclosed in the embodiments of this application;

[0013] Figure 3 This is a schematic diagram of the shielding ring disclosed in an embodiment of this application;

[0014] Figure 4 This is a partial schematic diagram of the shielding ring disclosed in an embodiment of this application;

[0015] Figure 5 This is a schematic diagram of the deposition ring structure disclosed in an embodiment of this application;

[0016] Figure 6 This is a partial schematic diagram of the deposition ring disclosed in an embodiment of this application;

[0017] Figure 7 This is a schematic diagram illustrating the shielding effect of the shielding ring when the distance between the shielding ring and the wafer surface is different, as disclosed in the embodiments of this application.

[0018] Explanation of reference numerals in the attached figures:

[0019] 100 - Cavity; 110 - Lining;

[0020] 200 - Base; 210 - Bearing surface;

[0021] 300 - Deposition ring; 310 - Clearance hole;

[0022] 400 - shielding ring; 410 - annular plate; 411 - positioning hole; 420 - annular groove;

[0023] 500 - First lifting device; 510 - First lifting component; 520 - First lifting drive mechanism; 530 - First lifting seat;

[0024] 600 - Second lifting device; 610 - Second lifting component; 620 - Second lifting drive mechanism; 630 - Second lifting seat;

[0025] 700 - Magnetron sputtering device; 710 - Magnetron; 720 - Target material; 730 - Motor. Detailed Implementation

[0026] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0027] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0028] The embodiments of this application will be described in detail below with reference to the accompanying drawings and specific examples and application scenarios.

[0029] In some related technologies, the edge of the wafer is shielded by changing the diameter of the clamping ring to meet process requirements. However, as the target material is gradually consumed, this method cannot guarantee the consistency of the range and thickness of the thin film on the back or front edge of the wafer throughout the entire target material cycle, and it cannot adjust the range and thickness of the thin film on the back or front edge of the wafer in real time.

[0030] In other related technologies, a groove is provided in the base, and a positioning pin is provided at the corresponding groove position of the pressure ring. This positioning ensures that the concentricity of the pressure ring does not shift as the pressure ring moves during the process, and the pressure ring is fixed to the base with fasteners. However, this method cannot adjust the range and thickness of the thin film on the back of the crystal or the edge of the front side of the wafer by adjusting the pressure ring.

[0031] In order to adjust the range and thickness of the thin film at the edge of the back of the crystal or the front of the wafer, thereby improving the consistency of the thin film at the edge of the back of the crystal or the front of the wafer and thus improving product performance, this application proposes an improved process chamber to overcome the above problems.

[0032] refer to Figures 1 to 7 This application discloses a process chamber applied to semiconductor process equipment. The semiconductor process equipment can be thin film deposition equipment, or other equipment, which is not specifically limited here. The disclosed process chamber includes a cavity 100, a base 200, a deposition ring 300, a shielding ring 400, and a first lifting device 500.

[0033] The cavity 100 is the basic component of the process chamber, providing an installation base for components such as the base 200, deposition ring 300, shielding ring 400, and first lifting device 500. In some embodiments, the base 200, deposition ring 300, and shielding ring 400 are all located within the cavity 100. On the one hand, the cavity 100 provides space for the base 200, deposition ring 300, and shielding ring 400; on the other hand, it also provides protection for the base 200, deposition ring 300, and shielding ring 400.

[0034] The base 200 is used to support the wafer, wherein the upper surface of the base 200 can serve as a support surface 210 for placing and supporting the wafer, so that the wafer fed into the cavity 100 can be processed on the support surface 210. In some embodiments, the base 200 may include a chassis and a support disk disposed on the upper part of the chassis, the chassis being used to support and fix the support disk, and the support disk being used to support the wafer.

[0035] A deposition ring 300 is disposed around the base 200. In some embodiments, the diameter of the chassis is larger than the diameter of the carrier disk, causing the edge of the chassis to protrude beyond the edge of the carrier disk. The deposition ring 300 is disposed on the edge of the chassis and fitted around the periphery of the carrier disk, thereby shielding the edge of the chassis to prevent the deposition of a thin film on the edge of the chassis. Exemplarily, the deposition ring 300 may include a first annular protrusion located on the inner edge and a second annular protrusion located on the outer edge, with an annular groove formed between the first and second annular protrusions. When the deposition ring 300 is placed on the base 200, the first annular protrusion surrounds the base 200, and the end face of the first annular protrusion is slightly lower than the carrier surface 210 of the base 200 to ensure that the wafer can fully contact the carrier surface 210. The end face of the second annular protrusion is slightly higher than the carrier surface 210 of the base 200, which can provide a certain degree of radial restraint for the wafer.

[0036] The shielding ring 400 serves to shield reactants, preventing them (e.g., deposited particles) from entering the bottom region of the cavity 100 and causing contamination. In some embodiments, the cavity 100 is provided with a liner 110, which is arranged around the base 200 to shield the inner wall of the cavity 100 located around the base 200, thereby effectively preventing reactants from contacting the inner wall of the cavity 100 and causing contamination. Furthermore, there is a gap between the inner edge of the liner 110 and the base 200 and the deposition ring 300. Thus, the shielding ring 400 can shield the gap between the inner edge of the liner 110 and the base 200 and the deposition ring 300, thereby effectively preventing reactants from entering the lower region of the cavity 100 through the gap and causing contamination. Based on this, the shielding ring 400 can be provided in the liner 110 of the cavity 100, so that the liner 110 provides support for the shielding ring 400.

[0037] Furthermore, the shielding ring 400 can also be used to shield the edges of the wafer, protecting the edge areas of the wafer from contamination by reactants during semiconductor processing. Accordingly, at least a portion of the shielding ring 400 extends to the edge area of ​​the base 200 to shield the edge area of ​​the base 200, thereby shielding the corresponding area of ​​the wafer placed on the base 200 to protect the corresponding area of ​​the wafer from contamination by reactants during semiconductor processing.

[0038] To adjust the relative distance between the shielding ring 400 and the base 200 or the wafer, the shielding ring 400 is flexibly mounted on the inner liner 110. In the non-process state, the shielding ring 400 is supported by the inner liner 110, while in the process state, the shielding ring 400 can be separated from the inner liner 110 to ensure that process gases can reach the wafer surface through the gap between the shielding ring 400 and the inner liner 110, and to ensure that there is an appropriate distance between the shielding ring 400 and the wafer to meet process requirements.

[0039] In this embodiment, the first lifting device 500 drives the shielding ring 400 to rise and fall, thereby adjusting the distance between the shielding ring 400 and the wafer supported by the base 200. In some embodiments, the first lifting device 500 may include multiple first lifting members 510, which are respectively connected to the shielding ring 400 and used to move the shielding ring 400 closer to or further away from the support surface 210 of the base 200 used to support the wafer. Based on this, by driving the shielding ring 400 to rise and fall through the multiple first lifting members 510, the distance between the shielding ring 400 and the support surface 210 is adjusted, thereby further adjusting the distance between the shielding ring 400 and the wafer on the support surface 210 to meet the process requirements under different operating conditions. Exemplarily, the first lifting member 510 may be a pin, a rod, a columnar structure, etc., and its specific shape is not specifically limited.

[0040] In some embodiments, the first lifting device 500 can be controlled by a control module so that multiple first lifting members 510 can move under the control of the control module, thereby driving the shielding ring 400 to move closer to or further away from the bearing surface 210 of the base 200 and the wafer located on the bearing surface 210, thereby changing the shielding effect of the shielding ring 400 on the wafer.

[0041] It should be noted that the control module can be included in the first lifting device 500, or it can be included in the control system of the semiconductor process equipment. Furthermore, the specific structure and working principle of the control module can be found in relevant technologies. In short, as long as it can control multiple first lifting components 510, the specific form is not limited.

[0042] In this embodiment, the first lifting member 510 of the first lifting device 500 can move the shielding ring 400 closer to or further away from the wafer surface on the base 200 to adjust the distance between the shielding ring 400 and the wafer surface. Thus, during the process, as the lifespan of the target material 720 is consumed, the shielding ring 400 will generate reactants, causing the inner diameter of the shielding ring 400 to gradually decrease, affecting the shielding effect of the shielding ring 400. However, by moving the shielding ring 400 closer to or further away from the wafer surface (or the target material 720) through the first lifting member 510, different shielding effects can be achieved through the shielding ring 400 at different positions to meet different shielding requirements of the process. Furthermore, by adjusting the position of the shielding ring 400, the consistency of the shielding effect throughout the lifespan of the target material 720 can be ensured, thereby ensuring the consistency of the film edge thickness and improving product performance.

[0043] To avoid interference between the deposition ring 300 and the lifting movement of the first lifting component 510, such as Figure 5 and Figure 6 As shown, the outer edge of the deposition ring 300 may be provided with multiple clearance holes 310. The multiple clearance holes 310 are arranged circumferentially along the deposition ring 300, and multiple first lifting members 510 correspond one-to-one and movably pass through the multiple clearance holes 310. By setting the clearance holes 310, on the one hand, it can be ensured that the first lifting members 510 can pass smoothly and connect with the shielding ring 400, so as to avoid interference between the deposition ring 300 and the first lifting members 510, which would affect the lifting of the shielding ring 400. On the other hand, the clearance holes 310 also have a guiding function for the first lifting members 510, thereby effectively preventing the first lifting members 510 from tilting and causing the shielding ring 400 to move, thus ensuring the positional accuracy of the shielding ring 400.

[0044] For example, the clearance hole 310 can be formed on the second annular protrusion to avoid the clearance hole 310 being blocked after the wafer is placed on the base 200, thereby ensuring that there is no interference between the first lifting member 510 and the wafer.

[0045] It should be noted that the deposition ring 300 is placed on the base 200 and surrounds the outer perimeter of the bearing plate. In this case, to avoid interference between the base 200 and the first lifting member 510, multiple through holes can be opened on the base. Each through hole is opposite to each clearance hole 310. In this way, each first lifting member 510 can pass through the corresponding through hole and clearance hole 310 in sequence and connect with the shielding ring 400, thereby effectively preventing the lifting movement of the first lifting member 510 from being interfered with by other structural components, and ensuring that the first lifting member 510 can drive the shielding ring 400 to lift.

[0046] refer to Figure 3 and Figure 4 In some embodiments, the shielding ring 400 may include an annular plate 410 and an annular groove 420. The annular groove 420 is disposed on the side of the annular plate 410 facing the bearing surface 210 and located at the outer edge of the annular plate 410. The inner edge of the annular plate 410 at least partially overlaps with the outer edge of the bearing surface 210. The annular groove 420 is locally adapted to the liner 110. In this embodiment, the annular plate 410 serves as a shield, blocking the gap between the liner 110 and the base 200 or the deposition ring 300, and also blocking a local area of ​​the outer edge of the base 200, thereby effectively preventing reactants from reaching the lower area of ​​the cavity 100 and the local area of ​​the wafer supported on the base 200. The annular groove 420 is used to assemble with the liner 110 so that the liner 110 supports the shielding ring 400.

[0047] For example, the annular groove 420 can be directly formed on the side of the annular plate 410 facing the bearing surface 210. Of course, the annular groove 420 can also be additionally formed on the side of the annular plate 410 facing the bearing surface 210.

[0048] In a more specific embodiment, the outer edge of the annular plate 410 facing the bearing surface 210 may be provided with a third annular protrusion and a fourth annular protrusion. The third annular protrusion and the fourth annular protrusion are radially spaced from each other in the shielding ring 400 to form an annular groove 420.

[0049] In another more specific embodiment, an annular protrusion may be provided on the outer edge of the side of the annular plate 410 facing the bearing surface 210, and an annular groove 420 is formed on the annular protrusion away from the end face of the annular plate 410.

[0050] To facilitate the installation of the shielding ring 400 and the inner liner 110, the inner edge of the inner liner 110 may be provided with a fifth annular protrusion, which is used to mate with the annular groove 420. Specifically, under non-process conditions, the shielding ring 400 is in a low position. At this time, the fifth annular protrusion mates with the annular groove 420, which on the one hand can provide load-bearing support for the shielding ring 400, and on the other hand can alleviate the problem of the shielding ring 400 moving arbitrarily, further improving the positional accuracy of the shielding ring 400.

[0051] In this embodiment, the annular groove 420 and the inner liner 110 cooperate to form a labyrinth channel at the cooperation point, so as to realize the transmission of process gas through the labyrinth channel, thereby ensuring that the process gas can reach the wafer surface more uniformly for process reaction.

[0052] refer to Figure 1 and Figure 2 In some embodiments, the inner edge region of the annular plate 410, facing away from the bearing surface 210, gradually extends towards the bearing surface 210 from the outer edge to the inner edge. This arrangement allows the inner edge region of the annular plate 410 to adapt to the movement trajectory of the reactive particles, thereby guiding the movement of the reactive particles and enabling them to move more smoothly to the wafer surface. Furthermore, this arrangement also allows for a smaller thickness at the edge of the inner edge region of the annular plate 410, making it less likely for a thin film to form on the end face of the inner edge region. This effectively alleviates the problem of the shielding ring 400 gradually decreasing in inner diameter due to the formation of a thin film at the edge of the inner edge region during the process.

[0053] To improve the positional accuracy of the shielding ring 400, the side of the shielding ring 400 facing the bearing surface 210 may also be provided with multiple positioning holes 411, such as... Figure 3 and Figure 4 As shown, multiple positioning holes 411 are arranged circumferentially along the shielding ring 400, and multiple first lifting members 510 are correspondingly inserted into the multiple positioning holes 411. Through the cooperation of the first lifting members 510 and the positioning holes 411, the shielding ring 400 can be stably raised and lowered, and the shielding ring 400 can be prevented from radially moving during the raising and lowering process. This ensures the positional accuracy of the shielding ring 400 and further ensures the concentricity between the shielding ring 400 and the base 200 or the target material 720, thereby improving the process accuracy.

[0054] In this embodiment of the application, under semiconductor process conditions, the distance between the surface of the shielding ring 400 facing the bearing surface 210 and the bearing surface 210 can be 0mm to 10mm, for example, including 0mm, 2mm, 4mm, 5mm, 8mm, 10mm, etc. Of course, it can also be other distances, which are not specifically limited here.

[0055] It should be noted that during the semiconductor process, the lifespan of the target material 720 needs to be consumed. As the lifespan of the target material 720 changes, it will affect the thickness of the thin film on the wafer surface. Therefore, by adjusting the distance between the surface of the shielding ring 400 facing the carrier surface 210 and the carrier surface 210, the consumption of the target material 720 can be adapted, thereby improving the consistency of the thin film thickness on the wafer surface and ensuring product performance.

[0056] In some embodiments, during the initial stage of the semiconductor process, the shielding ring 400 is adjusted to a relatively high position relative to the bearing surface 210 (or wafer surface) by multiple first lifting members 510, for example, 5mm to 8mm, so that the distance between the surface of the shielding ring 400 facing the bearing surface 210 and the bearing surface 210 meets the process requirements in the initial stage of the target 720. As the lifespan of the target 720 is consumed, the distance between the surface of the shielding ring 400 facing the bearing surface 210 and the bearing surface 210 is gradually reduced by the multiple first lifting members 510. When the target 720 is consumed to a certain extent, for example, 900kWh, the first lifting members 510 adjust the shielding ring 400 until the distance between the surface of the shielding ring 400 facing the bearing surface 210 and the bearing surface 210 is 0mm. Based on the above process, by adjusting the position of the shielding ring 400, the shielding effect of the shielding ring 400 on the reactive particles can be kept basically consistent throughout the entire lifespan of the target material 720, which can improve the consistency of the thin film edge thickness on the wafer surface to a certain extent. Furthermore, by adjusting the position of the shielding ring 400, different shielding effects can be achieved, thereby meeting different front-side shielding requirements and the switching between having and not having a crystal backing. It should be noted that having a crystal backing refers to having a thin film deposited on the back side of the wafer, while not having a thin film deposited on the back side refers to not having a crystal backing. In this embodiment, the position adjustment of the shielding ring 400 during the above process can be controlled by a control module to ensure that the adjustment parameters of the shielding ring 400, such as adjustment speed, adjustment frequency, and adjustment distance, meet the process requirements.

[0057] It should be noted that target material 720 consumption refers to the reduction in the lifespan of the target material 720. This consumption can be read using computer software; the principle and process of this reading can be found in relevant technologies and will not be elaborated upon here. The lifespan of the target material 720 is the sum of the product of the time and energy of each process, measured in kWh. As the lifespan of the target material 720 decreases, the amount of reactants on the shielding ring 400 increases, leading to a gradual decrease in the inner diameter of the shielding ring 400 and an enhanced shielding effect. The first lifting device 500 can lower the shielding ring 400, reducing the distance between the shielding ring 400 and the wafer, thereby reducing the shielding effect. Therefore, as the lifespan of the target material 720 decreases, the consistency of the thin film thickness on the wafer surface can be ensured throughout the entire lifespan consumption process by gradually reducing the distance between the shielding ring 400 and the wafer (or the base 200).

[0058] refer to Figure 1 and Figure 2 To achieve the lifting movement of the first lifting component 510, the first lifting device 500 may further include a first lifting drive mechanism 520 and a first lifting seat 530. The first lifting seat 530 is located within the cavity 100, and multiple first lifting components 510 are respectively connected to the first lifting seat 530. The first lifting drive mechanism 520 extends at least partially into the cavity 100 and is connected to the first lifting seat 530. With this configuration, under the driving action of the first lifting drive mechanism 520, the first lifting seat 530 can move up and down axially within the cavity 100 along the process chamber, driving multiple first lifting components 510 to move up and down synchronously. These multiple first lifting components 510 then drive the shielding ring 400 to move up and down, thereby adjusting the position of the shielding ring 400 relative to the bearing surface 210 to meet positional requirements under different working conditions.

[0059] For example, the first lifting drive mechanism 520 may include linear drive components such as cylinders, hydraulic cylinders, and electric cylinders, while the first lifting seat 530 may adopt a plate structure. Multiple first lifting components 510 can be arranged through the plate structure, which can improve the stability of the shielding ring 400 during the lifting process to a certain extent.

[0060] To meet the needs of different working conditions, the base 200 can move up and down within the cavity 100 to switch between process and non-process positions. Based on this, the process chamber may also include a second lifting device 600, which is connected to the base 200 and used to drive the base 200 to move up and down to meet the positional requirements of the base 200 under different working conditions.

[0061] refer to Figure 1 and Figure 2In some embodiments, the second lifting device 600 may include a plurality of second lifting members 610, a second lifting seat 630, and a second lifting drive mechanism 620. Each of the plurality of second lifting members 610 has one end connected to the base 200 and the other end connected to the second lifting seat 630. The second lifting drive mechanism 620 extends at least partially into the cavity 100 and is connected to the second lifting seat 630. With this configuration, under the driving action of the second lifting drive mechanism 620, the second lifting seat 630 can move axially up and down within the cavity 100 along the process chamber, driving the plurality of second lifting members 610 to move synchronously up and down. The plurality of second lifting members 610 then drive the base 200 to move up and down, thereby adjusting the position of the base 200 to meet the positional requirements of the base 200 under process and non-process conditions.

[0062] For example, the second lifting drive mechanism 620 may include linear drive components such as cylinders, hydraulic cylinders, and electric cylinders, while the second lifting base 630 may adopt a plate structure. Multiple second lifting components 610 can be arranged through the plate structure, which can improve the stability of the base 200 during the lifting process to a certain extent.

[0063] Continue to refer to Figure 1 and Figure 2 In some embodiments, multiple first lifting members 510 are located on a first circumference, and multiple second lifting members 610 are located on a second circumference, with the diameter of the first circumference being larger than the diameter of the second circumference. This arrangement ensures that the lifting movements of the first lifting members 510 and the second lifting members 610 are independent of each other and do not interfere with each other, thus guaranteeing the smooth lifting movements of the shielding ring 400 and the base 200.

[0064] For example, the diameter of the circumference of the plurality of first lifting members 510 can range from 310mm to 320mm, while the diameter of the circumference of the plurality of second lifting members 610 can range from 250mm to 270mm. This ensures that the first lifting members 510 and the second lifting members 610 do not interfere with each other. Of course, other arrangements can also be used, which are not specifically limited here.

[0065] It should be noted that, since multiple first lifting members 510 are located on the outside and multiple second lifting members 610 are located on the inside, and the bottom ends of multiple first lifting members 510 are respectively connected to the first lifting seat 530, in order to avoid motion interference between the second lifting members 610 and the first lifting seat 530, the first lifting seat 530 can be provided with multiple through holes, and the multiple second lifting members 610 can be movably passed through the multiple through holes to ensure that there is no motion interference between the second lifting members 610 and the first lifting seat 530.

[0066] refer to Figure 1 and Figure 2 In some embodiments, the semiconductor process equipment can be a magnetron sputtering apparatus. In this case, the process chamber may further include a magnetron sputtering device 700, which may include a magnetron 710, a target 720, and an upper electrode assembly. The target 720 is disposed within the cavity 100 and above the base 200, and a sealed chamber is formed between the target 720 and the top wall of the cavity 100. The magnetron 710 is connected to the top wall of the cavity 100 and located within the sealed chamber. The upper electrode assembly is used to apply voltage to the target 720. Additionally, the magnetron sputtering device 700 may also include a motor 730 connected to the magnetron 710 to drive the magnetron 710 to rotate, thereby improving uniformity.

[0067] In the actual magnetron sputtering process, the upper electrode assembly applies a bias voltage to the target 720, making it negatively biased relative to the grounded cavity 100. This causes the process gas, such as argon, to discharge and generate plasma. The negative bias voltage also attracts positively charged argon ions to the target 720. When the energy of the argon ions is high enough and they bombard the target 720 under the magnetic field of the magnetron 710, metal atoms will escape from the surface of the target 720 and be deposited on the wafer through diffusion, thereby realizing the magnetron sputtering process of the wafer.

[0068] In this embodiment, for different back-side processes (i.e., whether there is thin film deposition on the back of the wafer or not, or whether there is thin film deposition on the back of the wafer at a certain distance from the edge of the wafer) and front-side edge removal processes (i.e., whether there is no thin film deposition on the front of the wafer at a certain distance from the edge of the wafer, or whether there is a thin film deposition with a certain thickness requirement on the front of the wafer at a certain distance from the edge of the wafer), the shielding ring 400 is driven to move up and down by multiple first lifting components 510 of the first lifting mechanism, so as to change the distance between the surface of the lifting ring facing the bearing surface 210 and the bearing surface 210, thereby achieving different shielding effects and meeting process requirements.

[0069] refer to Figure 7 The thickness profile of an 800nm ​​Al thin film was measured at 49 points under different distances between the shielding ring 400 and the wafer surface. Point 1 was the center of the wafer, points 2-9 were on the innermost ring, points 10-24 were on the outermost ring, and points 25-49 were on the outermost ring (3mm from the wafer edge). The figure shows that as the distance between the wafer and the shielding ring 400 increases (e.g., from 1mm to 3mm), the shielding effect of the shielding ring 400 gradually strengthens, and the thickness of the thin film at the outermost edge of the wafer gradually decreases.

[0070] Based on the above-mentioned process chamber, this application also discloses a semiconductor process apparatus, which includes the above-mentioned process chamber.

[0071] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A process chamber, used in semiconductor process equipment, characterized in that, The process chamber includes: a chamber (100), a base (200), a deposition ring (300), a shielding ring (400), and a first lifting device (500); The base (200), the deposition ring (300), and the shielding ring (400) are all disposed within the cavity (100). The deposition ring (300) surrounds the base (200), and the shielding ring (400) is vertically and vertically disposed within the liner (110) of the cavity (100). At least a portion of the shielding ring (400) extends to the edge region of the base (200). The first lifting device (500) includes a plurality of first lifting components (510), which are respectively connected to the shielding ring (400) and are used to move the shielding ring (400) closer to or away from the support surface (210) of the base (200) for supporting the wafer.

2. The process chamber according to claim 1, characterized in that, The outer edge of the deposition ring (300) is provided with a plurality of clearance holes (310), and the plurality of clearance holes (310) are arranged along the circumference of the deposition ring (300); Multiple first lifting members (510) correspond one-to-one and can move through multiple clearance holes (310).

3. The process chamber according to claim 1, characterized in that, The shielding ring (400) includes an annular plate (410) and an annular groove (420). The annular groove (420) is provided on the side of the annular plate (410) facing the bearing surface (210) and is located at the outer edge of the annular plate (410). The inner edge of the annular plate (410) at least partially overlaps with the outer edge of the bearing surface (210), and the annular groove (420) is partially adapted to the lining (110).

4. The process chamber according to claim 3, characterized in that, The inner edge region of the annular plate (410) and the surface opposite to the bearing surface (210) gradually extends towards the bearing surface (210) from the outer edge of the annular plate (410) toward the inner edge.

5. The process chamber according to claim 1, characterized in that, The shielding ring (400) has a plurality of positioning holes (411) on the side facing the bearing surface (210), and the plurality of positioning holes (411) are arranged along the circumference of the shielding ring (400); Multiple first lifting components (510) are inserted one-to-one into multiple positioning holes (411).

6. The process chamber according to claim 1, characterized in that, In a semiconductor process, the distance between the surface of the shielding ring (400) facing the bearing surface (210) and the bearing surface (210) ranges from 0 mm to 10 mm.

7. The process chamber according to claim 1, characterized in that, The first lifting device (500) further includes a first lifting drive mechanism (520) and a first lifting seat (530); The first lifting seat (530) is located inside the cavity (100), and a plurality of the first lifting components (510) are respectively connected to the first lifting seat (530); The first lifting drive mechanism (520) extends at least partially into the cavity (100) and is connected to the first lifting seat (530).

8. The process chamber according to claim 1, characterized in that, The process chamber also includes a second lifting device (600), which includes a plurality of second lifting components (610), a second lifting seat (630), and a second lifting drive mechanism (620). Each of the plurality of second lifting members (610) has one end connected to the base (200) and the other end connected to the second lifting seat (630). The second lifting drive mechanism (620) extends at least partially into the cavity (100) and is connected to the second lifting seat (630).

9. The process chamber according to claim 8, characterized in that, Multiple first lifting members (510) are located on a first circumference, and multiple second lifting members (610) are located on a second circumference, wherein the diameter of the first circumference is larger than the diameter of the second circumference; And / or, the diameter of the circumference of the plurality of first lifting members (510) ranges from 310 mm to 320 mm, and the diameter of the circumference of the plurality of second lifting members (610) ranges from 250 mm to 270 mm.

10. The process chamber according to claim 1, characterized in that, The process chamber also includes a magnetron sputtering device (700), which includes a magnetron (710), a target (720), and an upper electrode assembly; The target (720) is disposed inside the cavity (100) and above the base (200), and a sealed chamber is isolated between the target (720) and the top wall of the cavity (100). The magnetron (710) is connected to the top wall of the cavity (100) and is located in the sealed chamber. The upper electrode assembly is used to apply voltage to the target (720).

11. A semiconductor process apparatus, characterized in that, Includes the process chamber as described in any one of claims 1 to 10.

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