Die-to-wafer bonding device and bonding method

Abstract

The present invention provides a device and method for bonding a die to a wafer, and relates to the field of semiconductor processing technology. The device includes: a pickup mechanism, comprising a fixed support frame and a pickup turntable horizontally arranged at the support end of the fixed support frame, wherein a horizontal rotation mechanism and a Z-axis lifting mechanism are arranged at the connection between the pickup turntable and the support end of the fixed support frame; a plurality of pickup heads are arranged circumferentially around the edge of the pickup turntable, and the pickup heads are movably connected to the pickup turntable via a vertical flip mechanism; and a bonding mechanism, comprising a Y-axis linear motion mechanism and a bonding wheel vertically arranged on the Y-axis linear motion mechanism, wherein a vertical rotation mechanism is arranged on the bonding wheel, and a plurality of bonding heads are arranged circumferentially around the edge of the bonding wheel, each of which is provided with a linear motion actuator. The present invention improves the efficiency of the bonding equipment, enhances the compatibility of the equipment, reduces the risk of die contamination and damage, and improves the production yield.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a grain-to-wafer bonding device and a bonding method. Background Art

[0002] In the die-to-wafer bonding process, the die on the dicing tape is usually lifted up by the ejection mechanism, and the front of the die is adsorbed by the pickup head of the pickup mechanism to completely separate it from the dicing tape. The pickup head is then flipped up and down, and the back of the die is adsorbed by the bonding head of the bonding mechanism to complete the transfer of the die. The bonding mechanism then moves to the top of the bonding platform, and after alignment, the die is bonded to the target wafer.

[0003] However, in actual applications, there are several problems: (1) The transfer of grains between the pick-up head and the bonding head is inefficient because only one grain can be transferred at a time; (2) The pick-up head and the bonding head are not compatible. Usually, different pick-up heads and bonding heads need to be replaced to correspond to grains of different sizes; (3) The pick-up mechanism is designed in a straight line. The flipping of the pick-up head is completed by the overall rotation of the connecting rod. After the pick-up head flips, the grain is handed over to the bonding head. That is, the material picking position of the bonding head is at a high position, and the bonding head requires a large Z-direction stroke during the bonding operation; or the position of the bonding platform is designed to be higher than the material picking platform. Due to the height difference between the two platforms, the lower material picking platform is prone to accumulation of contaminated particles, affecting the production yield; (4) The pick-up head vacuum absorbs the front of the grain, which will come into contact with the front working surface, which is easy to cause contamination or damage to the grain, thereby affecting the production yield. Summary of the Invention

[0004] In view of this, an embodiment of the present application provides a die-to-wafer bonding device and bonding method to achieve the purpose of improving the efficiency of the bonding device, improving the compatibility of the device, reducing the risk of die contamination and damage, and improving the production yield.

[0005] The embodiment of the present application provides the following technical solution: a die-to-wafer bonding device, comprising:

[0006] The picking mechanism comprises a fixed support frame, and a picking turntable horizontally arranged at the supporting end of the fixed support frame, a horizontal rotation mechanism and a Z-direction lifting mechanism are arranged at the connection between the picking turntable and the supporting end of the fixed support frame, so that the picking turntable can rotate in the horizontal direction and move linearly in the vertical direction relative to the supporting end of the fixed support frame; a plurality of picking heads are arranged on the circumference of the edge of the picking turntable, and the picking heads are movably connected to the picking turntable through a vertical flipping mechanism; the picking turntable is located above the material picking platform as a whole, so that the picking heads are flipped by the vertical flipping mechanism to face the target grains on the material picking platform below, and move linearly downward under the drive of the Z-direction lifting mechanism, so that the picking heads pick up the target grains;

[0007] The bonding mechanism includes a Y-direction linear motion mechanism and a bonding wheel vertically arranged on the Y-direction linear motion mechanism. The bonding wheel can perform linear reciprocating motion along the Y-direction linear motion mechanism, and a vertical rotation mechanism is provided on the bonding wheel, so that the bonding wheel can rotate in the vertical direction; a plurality of bonding heads are arranged circumferentially on the edge of the bonding wheel, and a linear motion actuator is provided on each bonding head; the bonding wheel is located as a whole above the bonding platform, and the bonding wheel is driven by the Y-direction linear motion mechanism to approach the picking head on the picking turntable, so that the bonding head absorbs the target grain on the picking head under the drive of the linear motion actuator, and returns to the top of the bonding platform under the drive of the Y-direction linear motion mechanism, and the bonding head is driven to move linearly downward by the linear motion actuator to bond the target grain to the target wafer on the bonding platform.

[0008] According to one embodiment of the present application, each of the pickup heads is equipped with a Bernoulli nozzle, and picks up the target grains by positive pressure adsorption.

[0009] According to one embodiment of the present application, it also includes an ejection mechanism, which is arranged below the material-retrieving platform. A cutting tape is fixed on the material-retrieving platform, and the target grain is pasted on the cutting tape. The ejection mechanism performs a linear motion of a set thread in the vertical direction to lift the target grain on the cutting tape.

[0010] According to one embodiment of the present application, each bonding head is equipped with a vacuum adsorption nozzle, and absorbs the target crystal grains by negative pressure adsorption.

[0011] According to one embodiment of the present application, the Y-axis linear motion mechanism includes a guide rail frame respectively arranged on both sides of the material picking platform and the bonding platform, a guide rail fixed on the guide rail frame, and a Y-axis linear motor arranged on the guide rail, and the bonding wheel is arranged on the Y-axis linear motor.

[0012] According to one embodiment of the present application, a plurality of bonding heads are evenly spaced on the edge of the bonding wheel, a plurality of pickup heads are evenly spaced on the edge of the pickup turntable, and the number of the bonding heads is consistent with the number of the pickup heads.

[0013] According to an embodiment of the present application, the flipping angle of the vertical flipping mechanism is 90°, so as to flip the picking head between the horizontal direction and the vertical direction.

[0014] The present application also includes a bonding method for the die-to-wafer bonding device as described above, comprising the following steps:

[0015] S1. The pickup turntable is rotated by the horizontal rotation mechanism to rotate the target pickup head to the material picking position. The vertical flip mechanism flips the target pickup head to a vertical downward direction so that the target pickup head faces the target grain on the material picking platform below. The pickup turntable is driven by the Z-axis lifting mechanism to move linearly downward so that the target pickup head picks up the target grain. The target pickup head is then flipped to a horizontal direction by the vertical flip mechanism.

[0016] S2. Repeat step S1 until all the pickup heads on the pickup turntable pick up the corresponding target grains in sequence, and then drive the bonded wheel to move to the position to be transferred above the material retrieving platform through the Y-axis linear motion mechanism;

[0017] S3. The bond wheel is rotated by the vertical rotation mechanism to rotate the target bond head to the horizontal direction, and the target bond head is driven gradually closer to the target pickup head by the linear motion actuator until the target die on the target pickup head is sucked and returned to its original position under the drive of the linear motion actuator;

[0018] S4. Repeat step S3 until all the bonding heads on the bonding wheel have sequentially attracted the corresponding target die, and then the bonding wheel is brought back to the bonding position above the bonding platform by the Y-axis linear motion mechanism;

[0019] S5. Rotating the bonding wheel by the vertical rotation mechanism to rotate the target bond head vertically downward, driving the target bond head to move linearly downward by the linear motion actuator to bond the target die to the target position of the target wafer, and returning the target bond head to its original position under the drive of the linear motion actuator;

[0020] S6. Repeat step S5 until all target dies on the bonding heads are bonded to the target wafer in sequence.

[0021] According to an embodiment of the present application, step S1 also includes: before the Z-axis lifting mechanism drives the picking turntable to move linearly downward, the target grain on the cutting tape is lifted up by the ejection mechanism; after the target grain is picked up, the ejection mechanism is reset.

[0022] According to an embodiment of the present application, the picking turntable is driven to move linearly downward by a Z-axis lifting mechanism so that the target picking head picks up the target die, including:

[0023] The picking turntable is driven to move linearly downward by the Z-axis lifting mechanism, so that the target picking head approaches the front position of the target die, and positive pressure is turned on to separate the target die from the dicing tape and adsorb it onto the target picking head by positive pressure adsorption;

[0024] The target bonding head is driven gradually close to the target pickup head by a linear motion actuator until the target die on the target pickup head is sucked, including:

[0025] The target bonding head is driven to perform horizontal linear motion by a linear motion actuator, so that the target bonding head is close to the back side of the target grain on the target pickup head, the vacuum negative pressure is turned on, and after confirming that the negative pressure reaches the set value, the positive pressure on the target pickup head is turned off, and the target grain is transferred from the target pickup head to the target bonding head.

[0026] Compared with the prior art, the beneficial effects that can be achieved by at least one of the above-mentioned technical solutions adopted in the embodiments of this specification include at least the following: the embodiments of the present invention configure multiple picking heads on a group of picking mechanisms through a turntable structure, which can pick up multiple grains for transfer by the bonding mechanism; and the bonding mechanism is a wheel-disc structure, which can adsorb multiple grains in one transfer, reducing the number of Y-direction movements with a large stroke, and effectively improving the efficiency of the bonding equipment; in addition, each picking head on the picking mechanism is equipped with an independent flipping mechanism, which can turn the picking head to horizontal and transfer grains with the bonding head in the horizontal direction, reducing the height difference between the bonding head material picking position and the picking head material picking position; the picking head can also be configured into a variety of different sizes, realizing compatible application of grains of common sizes and reducing equipment downtime; at the same time, a Bernoulli suction nozzle is configured on the picking head, which realizes non-contact adsorption of the front of the grain through positive pressure adsorption, reducing the risk of grain contamination and damage, and improving the equipment production yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0028] Figure 1 Schematic diagram of the die-to-wafer bonding equipment structure according to an embodiment of the present invention;

[0029] Figure 2 is a schematic diagram of a top view of the pickup mechanism according to an embodiment of the present invention;

[0030] Figure 3 Schematic diagram of the handover operation between the picking mechanism and the bonding mechanism according to an embodiment of the present invention;

[0031] Among them, 1-fixed support frame, 2-picking turntable, 3-picking head, 4-material picking platform, 5-ejection mechanism, 6-guide rail frame, 7-guide rail, 8-bonding platform, 9-bonding wheel, 10-bonding head, 11-Z-axis lifting mechanism, 12-horizontal rotation mechanism, 13-vertical flip mechanism, 14-Bernoulli nozzle, 15-vacuum adsorption nozzle. DETAILED DESCRIPTION

[0032] The embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0033] The following describes the embodiments of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The present application can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that, in the absence of conflict, the features in the following embodiments and embodiments can be combined with each other. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without making creative work are within the scope of protection of this application.

[0034] like Figure 1-Figure 3 As shown, an embodiment of the present invention provides a die-to-wafer bonding device, comprising:

[0035] The picking mechanism includes a fixed support frame 1, and a picking turntable 2 horizontally arranged at the supporting end of the fixed support frame 1. A horizontal rotation mechanism 12 and a Z-direction lifting mechanism 11 are provided at the connection between the picking turntable 2 and the supporting end of the fixed support frame 1, so that the picking turntable 2 can rotate horizontally and move linearly in the vertical direction relative to the supporting end of the fixed support frame 1; a plurality of picking heads 3 are circumferentially arranged on the edge of the picking turntable 2, and the picking heads 3 are movably connected to the picking turntable 2 through a vertical flipping mechanism 13; the picking turntable 2 is located above the material picking platform 4 as a whole, so that the picking heads 3 are flipped by the vertical flipping mechanism 13 to face the target grains on the material picking platform 4 below, and move linearly downward under the drive of the Z-direction lifting mechanism 11, so that the picking heads 3 pick up the target grains;

[0036] The bonding mechanism includes a Y-direction linear motion mechanism and a bonding wheel 9 vertically arranged on the Y-direction linear motion mechanism. The bonding wheel 9 can perform linear reciprocating motion along the Y-direction linear motion mechanism, and a vertical rotation mechanism is provided on the bonding wheel 9, so that the bonding wheel 9 can rotate in the vertical direction; a plurality of bonding heads 10 are arranged circumferentially on the edge of the bonding wheel 9, and a linear motion actuator is provided on each of the bonding heads 10; the bonding wheel 9 is located as a whole above the bonding platform 8, and the bonding wheel 9 is driven by the Y-direction linear motion mechanism to approach the pickup head 3 on the pickup turntable 2, so that the bonding head 10 absorbs the target grain on the pickup head 3 under the drive of the linear motion actuator, and returns to the top of the bonding platform 8 under the drive of the Y-direction linear motion mechanism, and drives the bonding head 10 to move linearly downward by the linear motion actuator to bond the target grain to the target wafer on the bonding platform 8.

[0037] In this embodiment, the horizontal rotation mechanism can be driven by a DD motor, the Z-axis lifting mechanism can be driven by a linear motor, the vertical rotation mechanism can be driven by a DD motor, and the linear motion actuator can be driven by a piezoelectric actuator or a voice coil motor. In specific implementations, the horizontal rotation mechanism, the Z-axis lifting mechanism, the vertical rotation mechanism, and the linear motion actuator can all be driven by various existing motors.

[0038] In a specific implementation of this embodiment, each pickup head 3 is equipped with a Bernoulli nozzle 14, which picks up the target die through positive pressure suction. This embodiment uses non-contact suction of the front surface of the die, reducing the risk of die contamination and damage. Correspondingly, in a specific implementation, each bonding head 10 is equipped with a vacuum suction nozzle 15, which absorbs the target die through negative pressure suction.

[0039] In a specific implementation of this embodiment, an ejection mechanism 5 is further included. The ejection mechanism 5 is disposed below the material retrieving platform 4. A dicing tape is fixed to the material retrieving platform 4. The target grain is affixed to the dicing tape. The ejection mechanism 5 performs a linear motion in a set thread in the vertical direction to lift the target grain on the dicing tape. In a specific implementation, the material retrieving platform 4 is a circular ring-shaped structure with a through hole in the middle. The ejection mechanism 5 is disposed below the through hole. The dicing tape is affixed to the through hole. The ejection mechanism 5 performs a linear motion in a set thread in the vertical direction to lift the corresponding grain on the dicing tape.

[0040] In a specific implementation of this embodiment, the Y-axis linear motion mechanism includes a guide rail frame 6 respectively arranged on both sides of the material picking platform 4 and the bonding platform 8, and a guide rail 7 fixed on the guide rail frame 6, and a Y-axis linear motor is provided on the guide rail 7. The bonding wheel 9 is provided on the Y-axis linear motor, and the Y-axis linear motor is used to realize linear reciprocating motion above the material picking platform 4 and the bonding platform 8.

[0041] To maximize efficiency, in a specific implementation of this embodiment, multiple bond heads 10 are evenly spaced along the edge of the bond wheel 9, and multiple pick-up heads 3 are evenly spaced along the edge of the pick-up turntable 2. The number of bond heads 10 is the same as the number of pick-up heads 3. In specific implementation, the specific arrangement can be based on the space dimensions and requirements of the bond wheel 9 and the pick-up turntable 2.

[0042] In a specific implementation of this embodiment, the vertical flip mechanism 13 has a flip angle of 90°, so as to flip the pickup head 3 between the horizontal and vertical directions. In this embodiment, the vertical flip mechanism can be driven by a DD motor. In specific implementations, the vertical flip mechanism can adopt various existing implementation methods, such as DD motor drive, a cylinder and connecting rod mechanism, a motor and gear rack mechanism, etc.

[0043] The embodiment of the present invention configures multiple picking heads on a group of picking mechanisms through a turntable structure, which can pick up multiple grains for transfer by the bonding mechanism; the bonding mechanism is a wheel-disk structure, which can adsorb multiple grains in one transfer, reduce the number of Y-axis movements with a large stroke, and improve equipment efficiency; each picking head on the picking mechanism is equipped with an independent flipping mechanism, which can turn the picking head to horizontal and transfer grains with the bonding head in the horizontal direction, reducing the height difference between the bonding head picking position and the picking head picking position; the picking head can also be configured into a variety of different sizes to achieve compatible application of commonly sized grains and reduce equipment downtime; at the same time, a Bernoulli suction nozzle is configured on the picking head to achieve non-contact adsorption of the front of the grain through positive pressure adsorption, reducing the risk of contamination and damage.

[0044] An embodiment of the present invention further provides a bonding method for the die-to-wafer bonding device as described above, comprising the following steps:

[0045] S1. The pickup turntable is rotated by the horizontal rotation mechanism to rotate the target pickup head to the material picking position. The vertical flip mechanism flips the target pickup head to a vertical downward direction so that the target pickup head faces the target grain on the material picking platform below. The pickup turntable is driven by the Z-axis lifting mechanism to move linearly downward so that the target pickup head picks up the target grain. The target pickup head is then flipped to a horizontal direction by the vertical flip mechanism.

[0046] S2. Repeat step S1 until all the pickup heads on the pickup turntable pick up the corresponding target grains in sequence, and then drive the bonded wheel to move to the position to be transferred above the material retrieving platform through the Y-axis linear motion mechanism;

[0047] S3. The bond wheel is rotated by the vertical rotation mechanism to rotate the target bond head to the horizontal direction, and the target bond head is driven gradually closer to the target pickup head by the linear motion actuator until the target die on the target pickup head is sucked and returned to its original position under the drive of the linear motion actuator;

[0048] S4. Repeat step S3 until all the bonding heads on the bonding wheel have sequentially attracted the corresponding target die, and then the bonding wheel is brought back to the bonding position above the bonding platform by the Y-axis linear motion mechanism;

[0049] S5. Rotating the bonding wheel by the vertical rotation mechanism to rotate the target bond head vertically downward, driving the target bond head to move linearly downward by the linear motion actuator to bond the target die to the target position of the target wafer, and returning the target bond head to its original position under the drive of the linear motion actuator;

[0050] S6. Repeat step S5 until all target dies on the bonding heads are bonded to the target wafer in sequence.

[0051] In a specific implementation of this embodiment, step S1 further includes: before the Z-axis lifting mechanism drives the picking turntable to move linearly downward, the ejection mechanism lifts up the target die on the dicing tape; after the target die is picked up, the ejection mechanism is reset.

[0052] In a specific implementation of this embodiment, the picking turntable is driven to move linearly downward by a Z-axis lifting mechanism so that the target picking head picks up the target die, including:

[0053] The picking turntable is driven to move linearly downward by the Z-axis lifting mechanism, so that the target picking head approaches the front position of the target die, and positive pressure is turned on to separate the target die from the dicing tape and adsorb it onto the target picking head by positive pressure adsorption;

[0054] The target bonding head is driven gradually close to the target pickup head by a linear motion actuator until the target die on the target pickup head is sucked, including:

[0055] The target bonding head is driven to perform horizontal linear motion by a linear motion actuator, so that the target bonding head is close to the back side of the target grain on the target pickup head, the vacuum negative pressure is turned on, and after confirming that the negative pressure reaches the set value, the positive pressure on the target pickup head is turned off, and the target grain is transferred from the target pickup head to the target bonding head.

[0056] In a specific embodiment, the die-to-wafer bonding process of the present invention is as follows:

[0057] (1) Use the horizontal rotation mechanism of the pick-up turntable to rotate the No. 1 pick-up head to the material picking position;

[0058] (2) The pick-up head No. 1 is rotated to a vertical downward direction through the vertical flip mechanism, while the other pick-up heads are kept in a horizontal outward direction;

[0059] (3) The die to be picked up on the dicing tape is lifted up by the ejection mechanism;

[0060] (4) The Z-direction lifting mechanism of the pick-up turntable moves the pick-up head No. 1 downward to a position close to the front of the die, and the positive pressure is turned on to separate the die from the dicing tape and adsorb it onto the pick-up head;

[0061] (5) The ejection mechanism is reset, and the pick-up head No. 1 is moved upward to a safe position through the Z-direction lifting mechanism of the pick-up turntable, and the pick-up head No. 1 is turned to a horizontal outward position through the vertical flip mechanism;

[0062] (6) Repeat steps 1 to 5, picking up the corresponding grains using pickup heads No. 2 to No. n respectively;

[0063] (7) The bonding mechanism moves to the waiting position above the material retrieving platform via the Y-axis linear motor;

[0064] (8) The bond head No. 1 is rotated to a horizontal position close to the pick-up head through the vertical rotation mechanism of the bond wheel, and the bond head No. 1 is moved to a position close to the back of the die on the pick-up head No. 1 through the linear motion actuator on the bond head No. 1, and the vacuum is turned on. After confirming that the negative pressure reaches the set value, the positive pressure of the pick-up head No. 1 is turned off, and the die is transferred from the pick-up head No. 1 to the bond head No. 1;

[0065] (9) The linear motion actuator on the No. 1 bond head drives it back;

[0066] (10) Repeat steps 7 to 9 to transfer all the dies on the pick-up heads No. 2 to No. n to the corresponding bonding heads;

[0067] (11) The bonding mechanism moves to the bonding position above the bonding platform via the Y-axis linear motor;

[0068] (12) The bond head No. 1 is rotated to a vertical downward position by the vertical rotation mechanism of the bonding wheel. After optical alignment, the bond head No. 1 is driven downward by the linear motion actuator on the bond head No. 1 to bond the die to the target position of the target wafer. After waiting for a few seconds (process parameter setting, such as 1s), the vacuum of the bond head No. 1 is released.

[0069] (13) The linear motion actuator on the No. 1 bond head drives it back;

[0070] (14) Repeat steps 12 to 13 to bond the dies on bonding heads No. 2 to No. n to the target positions in sequence.

[0071] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present application should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A die-to-wafer bonding device, characterized in that: include: The picking mechanism comprises a fixed support frame, and a picking turntable horizontally arranged at the supporting end of the fixed support frame, a horizontal rotation mechanism and a Z-direction lifting mechanism are arranged at the connection between the picking turntable and the supporting end of the fixed support frame, so that the picking turntable can rotate in the horizontal direction and move linearly in the vertical direction relative to the supporting end of the fixed support frame; a plurality of picking heads are arranged on the circumference of the edge of the picking turntable, and the picking heads are movably connected to the picking turntable through a vertical flipping mechanism; the picking turntable is located above the material picking platform as a whole, so that the picking heads are flipped by the vertical flipping mechanism to face the target grains on the material picking platform below, and move linearly downward under the drive of the Z-direction lifting mechanism, so that the picking heads pick up the target grains; The bonding mechanism comprises a Y-axis linear motion mechanism and a bonding wheel disk vertically arranged on the Y-axis linear motion mechanism, wherein the bonding wheel disk can perform linear reciprocating motion along the Y-axis linear motion mechanism, and a vertical rotation mechanism is provided on the bonding wheel disk, so that the bonding wheel disk can rotate in the vertical direction; a plurality of bonding heads are arranged on the circumference of the edge of the bonding wheel disk, and a linear motion actuator is provided on each of the bonding heads; the bonding wheel disk is located above the bonding platform as a whole, and the bonding wheel disk is driven by the Y-axis linear motion mechanism to approach the pick-up head on the pick-up turntable, so that the bonding head absorbs the target crystal grain on the pick-up head under the drive of the linear motion actuator, and returns to the top of the bonding platform under the drive of the Y-axis linear motion mechanism, and the bonding head is driven by the linear motion actuator to move linearly downward to bond the target crystal grain to the target wafer on the bonding platform; Each of the pickup heads is equipped with a Bernoulli nozzle, and picks up the target crystal grains by positive pressure adsorption; each of the bonding heads is equipped with a vacuum adsorption nozzle, and absorbs the target crystal grains by negative pressure adsorption; The bonding method of the die-to-wafer bonding device comprises the following steps: S1. The pickup turntable is rotated by the horizontal rotation mechanism to rotate the target pickup head to the material picking position. The vertical flip mechanism flips the target pickup head to a vertical downward direction so that the target pickup head faces the target grain on the material picking platform below. The pickup turntable is driven by the Z-axis lifting mechanism to move linearly downward so that the target pickup head picks up the target grain. The target pickup head is then flipped to a horizontal direction by the vertical flip mechanism. S2. Repeat step S1 until all the pickup heads on the pickup turntable pick up the corresponding target grains in sequence, and then drive the bonded wheel to move to the position to be transferred above the material retrieving platform through the Y-axis linear motion mechanism; S3. The bond wheel is rotated by the vertical rotation mechanism to rotate the target bond head to the horizontal direction, and the target bond head is driven gradually closer to the target pickup head by the linear motion actuator until the target die on the target pickup head is sucked and returned to its original position under the drive of the linear motion actuator; S4. Repeat step S3 until all the bonding heads on the bonding wheel have sequentially attracted the corresponding target die, and then the bonding wheel is brought back to the bonding position above the bonding platform by the Y-axis linear motion mechanism; S5. Rotating the bonding wheel by the vertical rotation mechanism to rotate the target bond head vertically downward, driving the target bond head to move linearly downward by the linear motion actuator to bond the target die to the target position of the target wafer, and returning the target bond head to its original position under the drive of the linear motion actuator; S6. Repeat step S5 until all target dies on the bonding heads are bonded to the target wafer in sequence.

2. The die-to-wafer bonding apparatus according to claim 1, wherein: It also includes an ejection mechanism, which is arranged below the material-retrieving platform. A dicing tape is fixed on the material-retrieving platform, and the target grain is pasted on the dicing tape. The ejection mechanism performs linear motion of a set thread in the vertical direction to lift the target grain on the dicing tape.

3. The die-to-wafer bonding apparatus according to claim 1, wherein: The Y-direction linear motion mechanism includes guide rail frames respectively arranged on both sides of the material picking platform and the bonding platform, guide rails fixed on the guide rail frames, and a Y-direction linear motor arranged on the guide rails, and the bonding wheel is arranged on the Y-direction linear motor.

4. The die-to-wafer bonding apparatus according to claim 1, wherein: A plurality of bonding heads are evenly spaced apart on the edge of the bonding wheel, a plurality of pickup heads are evenly spaced apart on the edge of the pickup turntable, and the number of the bonding heads is the same as the number of the pickup heads.

5. The die-to-wafer bonding apparatus according to claim 1, wherein: The flipping angle of the vertical flipping mechanism is 90°, so as to flip the pickup head between the horizontal direction and the vertical direction.

6. The die-to-wafer bonding apparatus according to claim 1, wherein: Step S1 also includes: before the Z-axis lifting mechanism drives the pick-up turntable to move linearly downward, the ejection mechanism lifts up the target die on the dicing tape; after the target die is picked up, the ejection mechanism is reset.

7. The die-to-wafer bonding apparatus according to claim 1, wherein: The picking turntable is driven to move linearly downward by a Z-direction lifting mechanism so that the target picking head picks up the target grain, including: The picking turntable is driven to move linearly downward by the Z-axis lifting mechanism, so that the target picking head approaches the front position of the target die, and positive pressure is turned on to separate the target die from the dicing tape and adsorb it onto the target picking head by positive pressure adsorption; The target bonding head is driven gradually close to the target pickup head by a linear motion actuator until the target die on the target pickup head is sucked, including: The target bonding head is driven to perform horizontal linear motion by a linear motion actuator, so that the target bonding head is close to the back side of the target grain on the target pickup head, the vacuum negative pressure is turned on, and after confirming that the negative pressure reaches the set value, the positive pressure on the target pickup head is turned off, and the target grain is transferred from the target pickup head to the target bonding head.

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