Power unit and power device having the same

Abstract

The present invention provides a power unit and a power device having the same, wherein the power unit comprises: a substrate, wherein a first terminal conductive part, a chip conductive part and a second terminal conductive part are sequentially arranged in a first direction, and the chip conductive part is conductively connected to the second terminal conductive part; a chip is arranged on the chip conductive part, wherein a first side of the chip is connected to the chip conductive part, and a second side of the chip is conductively connected to the first terminal conductive part; a first diode is arranged on the second terminal conductive part; a control part is arranged on the substrate and connected to the chip, and the control part is arranged between the chip and the first diode. The technical solution of the present application effectively solves the problem of poor heat dissipation effect of the power unit in the related art.

Description

Technical Field

[0001] The present invention relates to the technical field of power devices, and in particular to a power unit and a power device having the same. Background Art

[0002] A power device generally includes an insulating substrate, a chip, an anti-parallel diode, a current input terminal and a current output terminal. The chip and the anti-parallel diode are arranged adjacent to each other, and the current input terminal board and the current output terminal board are located on the same side of the chip and the diode. This facilitates the connection between the current input terminal and the current input terminal board, and also facilitates the connection between the current output terminal and the current output terminal board.

[0003] In the related art, since the chip and the anti-parallel diode are arranged adjacent to each other, the heat generated when the chip is in operation and the heat generated when the anti-parallel diode is in operation will accumulate in the area where the chip and the anti-parallel diode are installed on the insulating substrate, resulting in the heat being unable to be dissipated in time. Summary of the invention

[0004] The main purpose of the present invention is to provide a power unit and a power device having the same, so as to solve the problem of poor heat dissipation effect of the power unit in the related art.

[0005] In order to achieve the above-mentioned purpose, according to a first aspect of the present invention, a power unit is provided, comprising: a substrate, on which a first terminal conductive part, a chip conductive part and a second terminal conductive part are arranged in sequence and spaced apart in a first direction, and the chip conductive part is conductively connected to the second terminal conductive part; a chip is arranged on the chip conductive part, a first side of the chip is connected to the chip conductive part, and a second side of the chip is conductively connected to the first terminal conductive part; a first diode is arranged on the second terminal conductive part; and a control part is arranged on the substrate and connected to the chip, and the control part is arranged between the chip and the first diode.

[0006] Furthermore, the power unit also includes a second diode, the second terminal conductive portion is conductively connected to the first end of the second diode, and the chip conductive portion is conductively connected to the second end of the second diode.

[0007] Furthermore, an avoidance recess is provided on the second terminal conductive part, the chip conductive part includes a conductive body part and an extension part, the extension part extends into the avoidance recess, the chip is arranged on the conductive body part, and the second diode is arranged on the extension part.

[0008] Furthermore, the power unit further includes a third terminal conductive portion connected to the first terminal conductive portion, and a side of the first diode away from the second terminal conductive portion is connected to the third terminal conductive portion.

[0009] Further, the third terminal conductive portion and the second terminal conductive portion are spaced apart in the second direction, and the second direction is perpendicular to the first direction.

[0010] Furthermore, there are multiple first diodes, and the multiple first diodes are arranged at intervals in the second direction. The power unit also includes a fourth terminal conductive part, and the fourth terminal conductive part, the second terminal conductive part and the third terminal conductive part are arranged at intervals in the second direction. Some of the multiple first diodes are connected to the third terminal conductive part, and the remaining first diodes are connected to the fourth terminal conductive part.

[0011] Further, the portion of the first diode connected to the third terminal conductive portion is arranged between the second diode and the third terminal conductive portion, and the portion of the first diode connected to the fourth terminal conductive portion is arranged between the second diode and the fourth terminal conductive portion.

[0012] According to a second aspect of the present invention, a power device is provided, comprising a base plate, a power unit arranged on the base plate, a first power terminal and a second power terminal, the power unit being the above-mentioned power unit, the first power terminal being conductively connected to a first terminal conductive portion of the power unit, and the second power terminal being conductively connected to a second terminal conductive portion of the power unit.

[0013] According to a third aspect of the present invention, a power device is provided, comprising a base plate, a power unit arranged on the base plate, a first power terminal and a second power terminal, the power unit being the above-mentioned power unit, the first power terminal being conductively connected to the first terminal conductive portion of the power unit, and the second power terminal being conductively connected to the second terminal conductive portion of the power unit.

[0014] Furthermore, there are multiple power units, including a first power unit and a second power unit, the first power terminal is connected to the first terminal conductive part of the first power unit and the first terminal conductive part of the second power unit, and the second power terminal is connected to the second terminal conductive part of the first power unit and the second terminal conductive part of the second power unit.

[0015] Further, the first terminal conductive portion of the first power unit, the second terminal conductive portion of the first power unit, the second terminal conductive portion of the second power unit, and the first terminal conductive portion of the second power unit are sequentially spaced apart in the first direction.

[0016] Further, the first power terminal includes a support plate, a lead-out plate, a first connecting plate and a second connecting plate, the first end of the first connecting plate is connected to the first side of the support plate, the first connecting plate is folded and has an overlapping section superimposed on the support plate, the second end of the first connecting plate is connected to the first terminal conductive part of the first power unit, the first end of the second connecting plate is connected to the first side of the support plate, the second end of the second connecting plate is connected to the first terminal conductive part of the second power unit, one end of the lead-out plate is connected to the second side of the support plate, and the first side of the support plate and the second side of the support plate are arranged opposite to each other.

[0017] Furthermore, the first power terminal also includes a fifth connecting plate and a sixth connecting plate, the first end of the fifth connecting plate is connected to the second side of the support plate, the second end of the fifth connecting plate is connected to the fourth terminal conductive part of the first power unit, the first end of the sixth connecting plate is connected to the first side of the support plate, and the second end of the sixth connecting plate is connected to the fourth terminal conductive part of the second power unit.

[0018] Applying the technical solution of the present invention, the power unit includes a substrate, a chip, a first diode and a control unit. The first terminal conductive part, the chip conductive part and the second terminal conductive part on the substrate are arranged at intervals in the first direction, the chip conductive part is located between the first terminal conductive part and the second terminal conductive part, and the chip conductive part is conductively connected to the second terminal conductive part. A chip is arranged on the chip conductive part, the first side of the chip is connected to the chip conductive part, and the second side of the chip is conductively connected to the first terminal conductive part. A first diode is arranged on the second terminal conductive part. A control unit is arranged on the substrate, the control unit is connected to the chip, and the control unit is arranged between the chip and the first diode. Through the above arrangement, the substrate can support the first terminal conductive part, the chip conductive part, the second terminal conductive part and the control unit. The first terminal conductive part and the second terminal conductive part can be connected to the current terminal structure, the first side of the chip can be connected to the chip conductive part, the second side of the chip is connected to the first terminal conductive part, and the chip conductive part can be conductively connected to the second terminal conductive part, so that the current can flow between the first terminal conductive part, the chip, the chip conductive part and the second terminal conductive part. The first terminal conductive part, the chip conductive part and the second terminal conductive part are arranged at intervals in the first direction, which facilitates the connection between the current terminal structure and the first terminal conductive part and the second terminal conductive part, making the structural form of the current terminal structure more reasonable. The control unit can control the operation of the chip. The control unit is arranged between the chip and the first diode, so that there is a gap between the chip and the first diode, so that the heat generated when the chip is running can be dissipated in time through the chip conductive part, and the heat generated when the first diode is running can be dissipated in time through the second terminal conductive part, avoiding the chip and the first diode being arranged adjacent to each other, resulting in heat accumulation and failure to dissipate in time, that is, the control unit is arranged between the chip and the first diode, so that the power unit has better heat dissipation capacity. Therefore, the technical solution of the present application effectively solves the problem of poor heat dissipation effect of the power unit in the related art. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings constituting a part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0020] Figure 1 A schematic diagram of the three-dimensional structure of an embodiment of a power unit according to the present invention is shown;

[0021] Figure 2 Shows Figure 1 A schematic top view of a power unit;

[0022] Figure 3 Shows Figure 1 The circuit schematic diagram of the power unit;

[0023] Figure 4 A schematic diagram of the three-dimensional structure of a power device according to a second embodiment of the present invention is shown;

[0024] Figure 5 Shows Figure 4 A schematic diagram of a three-dimensional structure of multiple power units of a power device;

[0025] Figure 6 Shows Figure 4 A schematic diagram of a three-dimensional structure in which a first power unit, a second power unit, a first power terminal and a second power terminal of a power device are connected;

[0026] Figure 7 Shows Figure 6 A schematic diagram of a main view of a power device;

[0027] Figure 8 Shows Figure 6 A cross-sectional schematic diagram of a power device in which a first power unit and a second power unit are connected to a first power terminal;

[0028] Fig. 9 Shows Figure 6 A schematic diagram of a three-dimensional structure of a first power terminal of a power device;

[0029] Fig.10 Shows Figure 6 A schematic diagram of a three-dimensional structure in which a first power unit and a second power unit of a power device are connected to a second power terminal;

[0030] Fig.11 Shows Figure 6 A schematic diagram of a three-dimensional structure of a second power terminal of a power device;

[0031] Fig.12 Shows Figure 6 A schematic top view of a power device;

[0032] Fig.13 Shows Figure 6 A cross-sectional schematic diagram of a power device;

[0033] Fig.14 Shows Figure 1 Temperature test simulation diagram of the power unit.

[0034] The above drawings include the following reference numerals:

[0035] 10. substrate; 11. first terminal conductive part; 12. chip conductive part; 1201. conductive body; 1202. extension part; 13. second terminal conductive part; 131. avoidance recess; 20. chip; 30. first diode; 40. control part; 41. insulation part; 42. control board; 50. second diode; 60. third terminal conductive part; 70. fourth terminal conductive part; 100. bottom plate; 110. first power terminal; 111. support plate; 112. lead plate; 1121. eleventh connecting section; 1122. twelfth connecting section; 113. first connecting plate; 11305. overlapping section; 1131. first connecting section; 1132. second connecting section; 1133. third connecting section; 1134 , the fourth connecting section; 114, the second connecting plate; 1141, the fifth connecting section; 1142, the sixth connecting section; 1143, the seventh connecting section; 1144, the eighth connecting section; 115, the third connecting plate; 1151, the ninth connecting section; 1152, the tenth connecting section; 116, the fourth connecting plate; 117, the fifth connecting plate; 118, the sixth connecting plate; 119, the seventh connecting plate; 1110, the eighth connecting plate; 120, the second power terminal; 121, the mounting plate; 122, the ninth connecting plate; 123, the tenth connecting plate; 124, the eleventh connecting plate; 125, the twelfth connecting plate; 126, the thirteenth connecting plate; 127, the fourteenth connecting plate; 130, the first power unit; 140, the second power unit. DETAILED DESCRIPTION

[0036] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0038] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present invention. Meanwhile, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, and therefore, once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0039] Silicon carbide power modules (i.e., power devices) need to flow not only forward current but also reverse current. When the body diode of the MOSFET chip flows through reverse current, it will cause the MOSFET chip to degrade, thereby affecting the reliability of the silicon carbide power module. The current silicon carbide power module is partially composed of a silicon carbide MOSFET chip and an anti-parallel silicon carbide diode chip, and partially composed of a silicon carbide MOSFET chip with an embedded diode structure. It is necessary to ensure that when the reverse current flows, the voltage drop of the dedicated anti-parallel diode (i.e., the first diode 30) is smaller than the voltage drop of the MOSFET body diode, so that the reverse current mainly flows through the dedicated anti-parallel diode instead of the MOSFET body diode, thereby slowing down the degradation of the MOSFET.

[0040] For unconventional high-voltage silicon carbide chips such as 6.5kV or 18kV, it is difficult to achieve the coordination of the MOSFET body diode and the dedicated anti-parallel diode. Even with a dedicated anti-parallel diode, reverse current may flow through the MOSFET chip.

[0041] like Figures 1 to 3 As shown, the power unit of this embodiment includes: a substrate 10, a chip 20, a first diode 30 and a control unit 40. A first terminal conductive portion 11, a chip conductive portion 12 and a second terminal conductive portion 13 are provided on the substrate 10. The first terminal conductive portion 11, the chip conductive portion 12 and the second terminal conductive portion 13 are sequentially arranged in a first direction, and the chip conductive portion 12 is conductively connected to the second terminal conductive portion 13. The chip 20 is provided on the chip conductive portion 12, the first side of the chip 20 is connected to the chip conductive portion 12, and the second side of the chip 20 is conductively connected to the first terminal conductive portion 11. The first diode 30 is provided on the second terminal conductive portion 13. The control unit 40 is provided on the substrate 10 and connected to the chip 20. The control unit 40 is provided between the chip 20 and the first diode 30.

[0042] Applying the technical solution of this embodiment, the power unit includes a substrate 10, a chip 20, a first diode 30 and a control unit 40. The first terminal conductive part 11, the chip conductive part 12 and the second terminal conductive part 13 on the substrate 10 are arranged at intervals in the first direction, the chip conductive part 12 is located between the first terminal conductive part 11 and the second terminal conductive part 13, and the chip conductive part 12 is conductively connected to the second terminal conductive part 13. The chip 20 is arranged on the chip conductive part 12, the first side of the chip 20 is connected to the chip conductive part 12, and the second side of the chip 20 is conductively connected to the first terminal conductive part 11. The first diode 30 is arranged on the second terminal conductive part 13. The control unit 40 is arranged on the substrate 10, the control unit 40 is connected to the chip 20, and the control unit 40 is arranged between the chip 20 and the first diode 30. Through the above arrangement, the substrate 10 can support the first terminal conductive part 11, the chip conductive part 12, the second terminal conductive part 13 and the control unit 40. The first terminal conductive part 11 and the second terminal conductive part 13 can be connected to the current terminal structure, the first side of the chip 20 can be connected to the chip conductive part 12, the second side of the chip 20 is connected to the first terminal conductive part 11, and the chip conductive part 12 can be conductively connected to the second terminal conductive part 13, so that the current can flow between the first terminal conductive part 11, the chip 20, the chip conductive part 12 and the second terminal conductive part 13. The first terminal conductive part 11, the chip conductive part 12 and the second terminal conductive part 13 are arranged at intervals in the first direction, which facilitates the connection between the current terminal structure and the first terminal conductive part 11 and the second terminal conductive part 13, making the structural form of the current terminal structure more reasonable. The control unit 40 can control the operation of the chip 20. The control unit 40 is arranged between the chip 20 and the first diode 30, so that there is a gap between the chip 20 and the first diode 30, so that the heat generated by the chip 20 when it is running can be dissipated in time through the chip conductive part 12, and the heat generated by the first diode 30 when it is running can be dissipated in time through the second terminal conductive part 13, avoiding the chip 20 and the first diode 30 being arranged adjacent to each other, resulting in heat accumulation and failure to dissipate in time, that is, the control unit 40 is arranged between the chip 20 and the first diode 30, so that the power unit has better heat dissipation capacity. Therefore, the technical solution of this embodiment effectively solves the problem of poor heat dissipation effect of the power unit in the related art.

[0043] It should be noted that the current terminal structure refers to the first power terminal 110 and the second power terminal 120. The first terminal conductive portion 11 includes a first terminal conductive plate, and the second terminal conductive portion 13 includes a second terminal conductive plate. The first diode 30 is used to provide a path for the current flowing through the power unit in the reverse direction.

[0044] The first side of the chip 20 is provided with a drain of the chip 20 , and the drain of the chip 20 is connected to the chip conductive part 12 . The second side of the chip 20 is provided with a source of the chip 20 , and the source of the chip 20 is conductively connected to the first terminal conductive part 11 .

[0045] like Figure 1 As shown, in this embodiment, the power unit further includes a second diode 50, the second terminal conductive portion 13 is conductively connected to the first end of the second diode 50, and the chip conductive portion 12 is conductively connected to the second end of the second diode 50. Through the above arrangement, the current can sequentially pass through the second terminal conductive portion 13, the second diode 50 and the chip conductive portion 12, then flow to the chip 20 through the chip conductive portion 12, and then flow to the first terminal conductive portion 11 through the chip 20. The second diode 50 enables the current to flow from the second terminal conductive portion 13 to the chip conductive portion 12, while the current cannot flow from the chip conductive portion 12 to the second terminal conductive portion 13, thereby preventing the current from flowing in the opposite direction through the chip 20, thereby slowing down the degradation of the chip 20.

[0046] The first end of the second diode 50 is an anode, and the second end of the second diode 50 is a cathode.

[0047] Connecting a silicon diode (i.e., the second diode 50) in series in the silicon carbide MOSFET chip circuit can improve the mutual compatibility of the silicon carbide MOSFET chip (i.e., the chip 20) and the anti-parallel diode chip (i.e., the first diode 30). Even if the conduction voltage of the anti-parallel diode chip (i.e., the first diode 30) is greater than the conduction voltage of the silicon carbide MOSFET chip body diode, the power unit can still ensure that the reverse current only flows through the anti-parallel diode chip, thereby alleviating the degradation of the MOSFET chip.

[0048] like Figure 2 As shown, in this embodiment, the second terminal conductive part 13 is provided with an avoidance recess 131, the chip conductive part 12 includes a conductive body part 1201 and an extension part 1202, the extension part 1202 extends into the avoidance recess 131, the chip 20 is arranged on the conductive body part 1201, and the second diode 50 is arranged on the extension part 1202. The second diode 50 can be connected to the second terminal conductive part 13, and the second diode 50 is arranged on the extension part 1202, so that the current can flow to the extension part 1202 through the second diode 50, and then flow to the conductive body part 1201 through the extension part 1202, and then the current can flow to the chip 20 through the conductive body part 1201. The extension part 1202 extends into the avoidance recess 131, so that the chip conductive part 12 and the second terminal conductive part 13 are more compact in structure, which is conducive to reducing the volume of the power unit.

[0049] It should be noted that the conductive body portion 1201 includes a conductive body plate, and the extension portion 1202 includes an extension plate.

[0050] like Figure 2 As shown, the spacing between the side of the conductive body 1201 facing the second terminal conductive part 13 and the side of the second terminal conductive part 13 facing the conductive body 1201 is between 0.5 mm and 1.5 mm, specifically, it can be 0.2 mm, 0.4 mm, 0.51 mm, 0.6 mm, 0.8, 1 mm or 1.5 mm, so that the insulation effect between the conductive body 1201 and the second terminal conductive part 13 is better and space can be saved.

[0051] like Figure 2 As shown, the interval between the extension portion 1202 and the avoidance recess 131 is between 0.2 mm and 1.5 mm, specifically, it can be 0.2 mm, 0.4 mm, 0.51 mm, 0.6 mm, 0.8, 1 mm or 1.5 mm, so that the insulation effect between the conductive body portion 1201 and the second terminal conductive portion 13 is better and space can be saved.

[0052] The ratio of the area of ​​the first terminal conductive portion 11 to the area of ​​the second terminal conductive portion 13 is between 0.45 and 0.55, specifically, it can be 0.45 mm, 0.48 mm, 0.5 mm, 0.53 mm or 0.55 mm. In this way, the arrangement of the first terminal conductive portion 11 and the second terminal conductive portion 13 is more reasonable, the chip 20 and the bonding wire can be properly placed, and less space can be occupied.

[0053] like Figure 2 As shown, in this embodiment, the power unit further includes a third terminal conductive portion 60 connected to the first terminal conductive portion 11, and the side of the first diode 30 away from the second terminal conductive portion 13 is connected to the third terminal conductive portion 60. Through the above arrangement, current can flow between the second terminal conductive portion 13, the first diode 30 and the third terminal conductive portion 60.

[0054] The third terminal conductive portion 60 includes a third terminal conductive plate.

[0055] like Figure 2 As shown, in this embodiment, the third terminal conductive portion 60 and the second terminal conductive portion 13 are spaced apart in the second direction, and the second direction is perpendicular to the first direction. Such a configuration makes the distance between the second terminal conductive portion 13 and the third terminal conductive portion 60 closer, which facilitates the connection between the first diode 30 and the second terminal conductive portion 13. The second direction is perpendicular to the first direction, which avoids the third terminal conductive portion 60 and the second terminal conductive portion 13 being spaced apart in the first direction, resulting in a larger outer size of the power unit.

[0056] It should be noted that the chip 20 includes a plurality of chips, and the plurality of chips 20 are arranged on the conductive body portion 1201 at intervals along the second direction.

[0057] like Figure 2 As shown, in this embodiment, there are multiple first diodes 30, and the multiple first diodes 30 are arranged at intervals in the second direction. The power unit also includes a fourth terminal conductive portion 70, and the fourth terminal conductive portion 70, the second terminal conductive portion 13 and the third terminal conductive portion 60 are arranged at intervals in the second direction. Some of the first diodes 30 in the multiple first diodes 30 are connected to the third terminal conductive portion 60, and the remaining first diodes 30 in the multiple first diodes 30 are connected to the fourth terminal conductive portion 70. The multiple first diodes 30 are arranged and connected in parallel, which can reduce the current passing through each first diode 30. By arranging the third terminal conductive portion 60 and the fourth terminal conductive portion 70, it is convenient for some of the multiple first diodes 30 to be connected to the third terminal conductive portion 60, and the other part of the multiple first diodes 30 to be connected to the fourth terminal conductive portion 70, that is, it is easier to connect the multiple first diodes 30.

[0058] The fourth terminal conductive part 70 includes a fourth terminal conductive plate. The cathodes of the plurality of first diodes 30 are connected to the second terminal conductive part 13 , and the anodes of some first diodes 30 are connected to the third terminal conductive part 60 . The anodes of some first diodes 30 are connected to the fourth terminal conductive part 70 .

[0059] like Figure 1 and Figure 2 As shown, in this embodiment, part of the first diode 30 connected to the third terminal conductive part 60 is arranged between the second diode 50 and the third terminal conductive part 60, and part of the first diode 30 connected to the fourth terminal conductive part 70 is arranged between the second diode 50 and the fourth terminal conductive part 70. Through the above arrangement, part of the first diode 30 located between the second diode 50 and the third terminal conductive part 60 can be connected to the third terminal conductive part 60, and part of the first diode 30 located between the second diode 50 and the fourth terminal conductive part 70 can be connected to the fourth terminal conductive part 70, so that the connection method of the plurality of first diodes 30 is more reasonable.

[0060] It should be noted that the first diode 30 disposed between the second diode 50 and the third terminal conductive portion 60 includes at least one, and the first diode 30 disposed between the second diode 50 and the fourth terminal conductive portion 70 includes at least one.

[0061] like Figure 1As shown, in this embodiment, the control part 40 includes an insulating part 41 and a control board 42, the insulating part 41 is arranged on the chip conductive part 12, and the control board 42 is arranged on the surface of the insulating part 41 away from the chip conductive part 12. The insulating part 41 enables the control board 42 to be insulated from the chip conductive part 12 to avoid conduction between the insulating part 41 and the chip conductive part 12. The control board 42 is arranged on the surface of the insulating part 41 away from the chip conductive part 12, so that the control board 42 is conveniently connected to the gate of the chip 20.

[0062] It should be noted that the insulating portion 41 includes an insulating plate, and the material of the insulating portion 41 can be ceramic, and of course, it can also be other materials with insulating properties. The control board 42 includes a PCB board. The control portion 40 is arranged on the conductive body portion 1201, that is, the control board 42 is arranged on the conductive body portion 1201. The control portion 40 is located between the plurality of chips 20 and the second diode 50.

[0063] like Figure 4 and Figure 5 As shown, in the first embodiment of the power device, the power device includes a base plate 100, a power unit arranged on the base plate 100, a first power terminal 110 and a second power terminal 120, the power unit is the above-mentioned power unit, the first power terminal 110 is conductively connected to the first terminal conductive portion 11 of the power unit, and the second power terminal 120 is conductively connected to the second terminal conductive portion 13 of the power unit. The base plate 100 can support the power unit. The first power terminal 110 can be connected to the first terminal conductive portion 11, and the second power terminal 120 can be connected to the second terminal conductive portion 13, so that the current can flow between the first power terminal 110, the power unit and the second power terminal 120. When the above power unit is in use, the control unit 40 is arranged between the chip 20 and the first diode 30, so that the control unit 40 can separate the chip 20 and the first diode 30, so that the heat generated by the chip 20 during operation can be promptly dissipated through the chip conductive part 12, and the heat generated by the first diode 30 during operation can be promptly dissipated through the second terminal conductive part 13, so as to avoid the accumulation of heat generated by the chip 20 during operation and the heat generated by the first diode 30 during operation, which affects the normal use of the power unit. The power device having the above power unit also has the above advantages.

[0064] The difference between the second embodiment of the power device and the first embodiment of the power device is that in the second embodiment of the power device, the power device includes a plurality of power units.

[0065] In the first embodiment of the power device and the second embodiment of the power device, the power device is a single-tube structure.

[0066] like Figure 4 and Figure 5As shown, in the second embodiment of the power device, the power device includes a base plate 100, a power unit arranged on the base plate 100, a first power terminal 110 and a second power terminal 120, the power unit is the above-mentioned power unit, the first power terminal 110 is conductively connected to the first terminal conductive portion 11 of the power unit, and the second power terminal 120 is conductively connected to the second terminal conductive portion 13 of the power unit. The base plate 100 can support the power unit. The first power terminal 110 can be connected to the first terminal conductive portion 11, and the second power terminal 120 can be connected to the second terminal conductive portion 13, so that the current can flow between the first power terminal 110, the power unit and the second power terminal 120. When the above power unit is in use, the control unit 40 is arranged between the chip 20 and the first diode 30, so that the control unit 40 can separate the chip 20 and the first diode 30, so that the heat generated by the chip 20 during operation can be promptly dissipated through the chip conductive part 12, and the heat generated by the first diode 30 during operation can be promptly dissipated through the second terminal conductive part 13, so as to avoid the accumulation of heat generated by the chip 20 during operation and the heat generated by the first diode 30 during operation, which affects the normal use of the power unit. The power device having the above power unit also has the above advantages.

[0067] It should be noted that when the current flows through the power unit in the forward direction, the current flows in from the second power terminal 120 and flows out through the first power terminal 110. The function of the first diode 30 is to provide a path for the current flowing through the power unit in the reverse direction, wherein the current flowing through the power unit in the reverse direction means that the current flows in from the first power terminal 110 and flows out through the second power terminal 120.

[0068] like Figure 5 and Figure 6 As shown, in the second embodiment of the power device, there are multiple power units, and the multiple power units include a first power unit 130 and a second power unit 140. The first power terminal 110 is connected to both the first terminal conductive portion 11 of the first power unit 130 and the first terminal conductive portion 11 of the second power unit 140, and the second power terminal 120 is connected to both the second terminal conductive portion 13 of the first power unit 130 and the second terminal conductive portion 13 of the second power unit 140. Through the above-mentioned settings, the first power terminal 110 can be connected to both the first power unit 130 and the second power unit 140, and the second power terminal 120 can be connected to both the first power unit 130 and the second power unit 140, so as to realize the parallel connection of the first power unit 130 and the second power unit 140, thereby enabling the power device to pass a larger current.

[0069] The first power unit 130 and the second power unit 140 form a power unit group, the multiple power units include multiple power unit groups, the first power terminal 110 and the second power terminal 120 each include multiple, the multiple power unit groups are arranged at intervals along the second direction, and each power unit group is connected to a first power terminal 110 and a second power terminal 120. The power device also includes a housing, the housing is bonded to the bottom plate, and the multiple power unit covers are arranged in the housing. The lead-out plate of the first power terminal 110 and the lead-out plate of the second power terminal 120 pass through the housing.

[0070] Of course, in other embodiments, a plurality of power unit groups may also be arranged at intervals along the first direction.

[0071] like Figure 5 and Figure 6 As shown, in the second embodiment of the power device, the first terminal conductive portion 11 of the first power unit 130, the second terminal conductive portion 13 of the first power unit 130, the second terminal conductive portion 13 of the second power unit 140, and the first terminal conductive portion 11 of the second power unit 140 are sequentially spaced in the first direction. The first power terminal 110 is connected to the first terminal conductive portion 11 of the first power unit 130 and the first terminal conductive portion 11 of the second power unit 140, and the second power terminal 120 is connected to the second terminal conductive portion 13 of the first power unit 130 and the second terminal conductive portion 13 of the second power unit 140. The above arrangement makes the first power terminal 110 connected to the first terminal conductive portion 11 of the first power unit 130, the first power terminal 110 connected to the first terminal conductive portion 11 of the second power unit 140, the second power terminal 120 connected to the second terminal conductive portion 13 of the first power unit 130, and the second power terminal 120 connected to the second power unit The structure of the second terminal conductive part 13 of the power unit 140 can be dispersed, so as to avoid the structure of the first power terminal 110 connected to the first terminal conductive part 11 of the first power unit 130, the structure of the first power terminal 110 connected to the first terminal conductive part 11 of the second power unit 140, the structure of the second power terminal 120 connected to the second terminal conductive part 13 of the first power unit 130, and the structure of the second power terminal 120 connected to the second terminal conductive part 13 of the second power unit 140 being crowded in a small area, affecting the connection of the first power terminal 110, the connection of the second power terminal 120, and the heat dissipation of the first power terminal 110 and the second power terminal 120. It is convenient to connect the first power terminal 110 with the first power unit 130 and the second power unit 140, and to connect the second power terminal 120 with the first power unit 130 and the second power unit 140.

[0072] like Figure 8 and Fig. 9As shown, in the second embodiment of the power device, the first power terminal 110 includes a support plate 111, a lead plate 112, a first connection plate 113 and a second connection plate 114, the first end of the first connection plate 113 is connected to the first side of the support plate 111, the first connection plate 113 is folded and has an overlapping section 11305 superimposed on the support plate 111, the second end of the first connection plate 113 is connected to the first terminal conductive portion 11 of the first power unit 130, the first end of the second connection plate 114 is connected to the first side of the support plate 111, the second end of the second connection plate 114 is connected to the first terminal conductive portion 11 of the second power unit, one end of the lead plate 112 is connected to the second side of the support plate 111, and the first side of the support plate 111 is arranged opposite to the second side of the support plate 111. The support plate 111 can support the lead plate 112, the first connection plate 113 and the second connection plate 114. The first end of the first connection plate 113 and the first end of the second connection plate 114 are both connected to the first side of the support plate 111. The first connection plate 113 is folded back and has an overlapping section 11305 that overlaps the support plate 111, so that the support plate 111, the first connection plate 113 and the second connection plate 114 are easier to form. The second end of the first connection plate 113 is connected to the first terminal conductive part 11 of the first power unit 130, and the second end of the second connection plate 114 is connected to the second terminal conductive part 13 of the second power unit 140. In this way, under the action of the first connection plate 113, the first power unit 130 can be connected to the support plate 111, and under the action of the second connection plate 114, the second power unit 140 can be connected to the support plate 111, and then the first power unit 130 and the second power unit 140 can be connected to the lead-out plate 112 through the support plate 111, so that they can be connected to the external structure through the lead-out plate 112 to realize the flow of current.

[0073] The first power terminal 110 further includes a third connection plate 115 and a fourth connection plate 116, wherein a first end of the third connection plate 115 is connected to a second side of the support plate 111, a second end of the third connection plate 115 is connected to a third terminal conductive portion 60 of the first power unit 130, a first end of the fourth connection plate 116 is connected to a first side of the support plate 111, a second end of the fourth connection plate 116 is connected to a fourth terminal conductive portion 70 of the first power unit 130, and the first side of the support plate 111 is arranged opposite to the second side of the support plate 111. The third connection plate 115 can connect the third terminal conductive portion 60 of the first power unit 130 to the support plate 111, and the fourth connection plate 116 can connect the fourth terminal conductive portion 70 of the first power unit 130 to the support plate 111, thereby realizing the flow of current. The first end of the third connecting plate 115 is connected to the second side of the support plate 111, the first end of the fourth connecting plate 116 is connected to the first side of the support plate 111, the first end of the first connecting plate 113 and the first end of the second connecting plate 114 are both connected to the first side of the support plate 111, and the first side of the support plate 111 is arranged opposite to the second side of the support plate 111, so that the position arrangement of the first connecting plate 113, the second connecting plate 114, the third connecting plate 115 and the fourth connecting plate 116 is more reasonable.

[0074] The support plate 111 also has a third side and a fourth side, and the first side of the support plate 111, the third side of the support plate 111, the second side of the support plate 111, and the fourth side of the support plate 111 are sequentially arranged and connected to each other. The fourth side of the support plate 111 is connected between the first side of the support plate 111 and the second side of the support plate 111.

[0075] like Figure 7 and Fig. 9 As shown, in the second embodiment of the power device, the first power terminal 110 further includes a fifth connection plate 117 and a sixth connection plate 118, the first end of the fifth connection plate 117 is connected to the second side of the support plate 111, the second end of the fifth connection plate 117 is connected to the fourth terminal conductive portion 70 of the first power unit 130, the first end of the sixth connection plate 118 is connected to the first side of the support plate 111, and the second end of the sixth connection plate 118 is connected to the fourth terminal conductive portion 70 of the second power unit 140. The fifth connection plate 117 can connect the third terminal conductive portion 60 of the second power unit 140 to the support plate 111, and the sixth connection plate 118 can connect the fourth terminal conductive portion 70 of the second power unit 140 to the support plate 111, so as to realize the flow of current.

[0076] It should be noted that the first power terminal 110 further includes a seventh connection plate 119 and an eighth connection plate 1110, wherein a first end of the seventh connection plate 119 is connected to a first side of the support plate 111, and a first end of the eighth connection plate 1110 is connected to a first side of the support plate 111. The seventh connection plate 119 has the same structure as the first connection plate 113, and the eighth connection plate 1110 has the same structure as the second connection plate 114. The first connection plate 113 and the seventh connection plate 119 are symmetrically arranged in the second direction, and the second connection plate 114 and the eighth connection plate 1110 are symmetrically arranged in the second direction.

[0077] The distance between the second connecting plate 114 and the eighth connecting plate 1110 is smaller than the distance between the first connecting plate 113 and the seventh connecting plate 119. The second connecting plate 114 is located between the first connecting plate 113 and the seventh connecting plate 119, and the eighth connecting plate 1110 is located between the first connecting plate 113 and the seventh connecting plate 119. This facilitates the processing and manufacturing of the first power terminal.

[0078] like Fig. 9 and Fig.12 As shown, the first connecting plate 113 includes a first connecting segment 1131, a second connecting segment 1132, a third connecting segment 1133 and a fourth connecting segment 1134 which are connected to each other in sequence, the first connecting segment 1131 extends in the direction from the support plate 111 to the substrate 10, the first connecting segment 1131 is connected between the support plate 111 and the second connecting segment 1132, the second connecting segment 1132 extends in the direction from the second power unit 140 to the first power unit 130, the third connecting segment 1133 extends in the direction from the support plate 111 to the substrate 10, and the fourth connecting segment 1134 is arranged on the first terminal conductive portion 11 of the first power unit 130.

[0079] The first connecting section 1131 and the third connecting section 1133 both extend along the third direction, and the third direction, the first direction, and the second direction are arranged perpendicularly in pairs.

[0080] like Fig.12 As shown, the distance between the two side walls of the second connecting section 1132 in the second direction is the first distance, the distance between the two side walls of the third connecting section 1133 in the second direction is the second distance, and the distance between the two side walls of the fourth connecting section 1134 in the second direction is the third distance. The second distance is equal to the third distance, and the second distance is greater than the first distance. The value of the first distance is a, and the value of the second distance is b, that is, the value of the third distance is also b, and the value of b is greater than the value of a, so that when the value of a increases to be equal to the value of b, the width of the first connecting plate 113 is large, which in turn causes the stress on the first connecting plate 113 to be large and the vibration resistance to be weak.

[0081] like Fig. 9As shown, the side of the third connecting section 1133 away from the seventh connecting plate 119 protrudes from the side of the second connecting section 1132 away from the seventh connecting plate 119. Such an arrangement can increase the cross-sectional area of ​​the current path, thereby reducing the parasitic inductance of the current path. The first connecting plate 113 and the seventh connecting plate 119 are symmetrically arranged, so that when designing the clamp used for bending and forming, the design is more convenient and more standardized. The second connecting section 1132 is flush with the side of the seventh connecting plate 119, the third connecting section 1133 is flush with the side of the seventh connecting plate 119, and the fourth connecting section 1134 is flush with the side of the seventh connecting plate 119.

[0082] The second connecting plate 114 includes a fifth connecting segment 1141, a sixth connecting segment 1142, a seventh connecting segment 1143 and an eighth connecting segment 1144 which are connected to each other in sequence, the fifth connecting segment 1141 extends in a direction from the support plate 111 to the substrate 10, the fifth connecting segment 1141 is connected between the support plate 111 and the sixth connecting segment 1142, the sixth connecting segment 1142 extends in a direction from the first power unit 130 to the second power unit 140, the seventh connecting segment 1143 extends in a direction from the support plate 111 to the substrate 10, and the eighth connecting segment 1144 is arranged on the first terminal conductive portion 11 of the second power unit 140.

[0083] The fifth connecting segment 1141 and the seventh connecting segment 1143 both extend along the third direction.

[0084] The distance between the two side walls of the sixth connecting segment 1142 in the second direction is the fourth distance, the distance between the two side walls of the seventh connecting segment 1143 in the second direction is the fifth distance, and the distance between the two side walls of the eighth connecting segment 1144 in the second direction is the sixth distance. The fifth distance is greater than the fourth distance, and the sixth distance is equal to the fifth distance. The value of the fourth distance is c, and the value of the fifth distance is d, that is, the value of d is greater than the value of c, and the value of the sixth distance is also d. This avoids the situation where when the value of c increases to be equal to the value of d, the width of the second connecting plate is larger, which in turn causes greater stress on the second connecting plate 114 and weaker vibration resistance.

[0085] The side of the seventh connecting section 1143 facing the eighth connecting plate 1110 protrudes from the side of the sixth connecting section 1142 facing the eighth connecting plate 1110. Such an arrangement can increase the cross-sectional area of ​​the current path, thereby reducing the parasitic inductance of the current path. The second connecting plate 114 and the eighth connecting plate 1110 are symmetrically arranged, which makes the design of the clamp used for bending and forming more convenient and standardized. The side of the sixth connecting section 1142 away from the eighth connecting plate 1110, the side of the seventh connecting section 1143 away from the eighth connecting plate 1110, and the side of the eighth connecting section 1144 away from the eighth connecting plate 1110 are arranged flush.

[0086] The protruding direction of the third connection segment 1133 is different from the protruding direction of the seventh connection segment 1143, which facilitates the manufacture of the first power terminal 110. Specifically, the overall structure of the first power terminal 110 is a flat plate structure at the beginning, and the overall three-dimensional structure of the first power terminal 110 is finally formed by bending the sheet metal. If the protruding direction of the third connection segment 1133 is the same as the protruding direction of the seventh connection segment 1143, after the first power terminal 110 is unfolded, the structures of the third connection segment 1133 and the seventh connection segment 1143 will have an overlapping area, resulting in the inability to manufacture the first power terminal 110.

[0087] The third connecting plate 115 includes a ninth connecting segment 1151 and a tenth connecting segment 1152 . The ninth connecting segment 1151 is connected between the supporting plate 111 and the tenth connecting segment 1152 . The tenth connecting segment 1152 is disposed on the third terminal conductive portion 60 of the first power unit 130 .

[0088] The fourth connecting plate 116 , the fifth connecting plate 117 and the sixth connecting plate 118 have the same structure as the third connecting plate 115 .

[0089] A first opening groove is provided on the support plate 111, and the first opening groove is located between the first end of the first connecting plate 113 and the first end of the second connecting plate 114. The first opening groove is provided through in the direction from the support plate 111 to the substrate 10, and the groove opening of the first opening groove is connected to the outer side of the support plate 111.

[0090] A second opening groove is also provided on the support plate 111, and the second opening groove is located between the first end of the seventh connecting plate 119 and the first end of the eighth connecting plate 1110. The second opening groove is set through in the direction from the support plate 111 to the substrate 10, and the groove opening of the second opening groove is connected to the outer side of the support plate 111, and the first opening groove and the second opening groove are symmetrically arranged in the first direction.

[0091] A third opening groove is also provided on the support plate 111, and the third opening groove is located between the first end of the first connecting plate 113 and the first end of the fifth connecting plate 117. The third opening groove is set through in the direction from the support plate 111 to the substrate 10, and the groove opening of the third opening groove is connected to the outer side of the support plate 111.

[0092] A fourth opening groove is also provided on the support plate 111, and the fourth opening groove is provided on the second side of the support plate 111 and close to the first end of the third connecting plate 115. The fourth opening groove and the third opening groove are symmetrically provided in the second direction, and the fourth opening groove is provided through in the direction from the support plate 111 to the substrate 10, and the groove opening of the fourth opening groove is connected to the outer side of the support plate 111.

[0093] A fifth opening groove is also provided on the support plate 111, and the fifth opening groove is located between the first end of the second connecting plate 114 and the first end of the sixth connecting plate 118. The fifth opening groove is set through in the direction from the support plate 111 to the substrate 10, and the groove opening of the fifth opening groove is connected to the outer side of the support plate 111.

[0094] A sixth opening groove is also provided on the support plate 111. The sixth opening groove is provided on the second side of the support plate 111 and is close to the first end of the fourth connecting plate. The sixth opening groove and the fifth opening groove are symmetrically provided in the second direction. The sixth opening groove is provided through in the direction from the support plate 111 to the substrate 10, and the groove opening of the sixth opening groove is connected to the outer side of the support plate 111.

[0095] The second side of the support plate 111 is also provided with a seventh opening groove, an eighth opening groove and a ninth opening groove in sequence, and the seventh opening groove, the eighth opening groove and the ninth opening groove are all arranged through in the direction from the support plate 111 to the substrate 10, and the slot openings of the seventh opening groove, the eighth opening groove and the ninth opening groove are all connected to the outer side of the support plate 111.

[0096] The lead-out plate 112 includes a first plate segment, a second plate segment, a third plate segment, and a fourth plate segment connected in sequence. The first plate segment is connected to the second side of the support plate 111 and extends from the substrate 10 to the support plate 111, the second plate segment extends from the second power unit 140 to the first power unit 130, the third plate segment extends from the substrate 10 to the support plate 111, and the fourth plate segment extends from the substrate 10 to the support plate 111.

[0097] like Fig. 9 and Fig.12 As shown, in the second direction, the distance between the side of the fourth plate segment close to the seventh connecting plate 119 and the seventh connecting plate 119 is the seventh distance, the distance between the side of the third plate segment close to the seventh connecting plate 119 and the seventh connecting plate 119 is the eighth distance, the distance between the side of the fourth plate segment away from the seventh connecting plate 119 and the seventh connecting plate 119 is the ninth distance, and the distance between the side of the third plate segment away from the seventh connecting plate 119 and the seventh connecting plate 119 is the tenth distance. The seventh distance is greater than the eighth distance. The ninth distance is greater than the tenth distance. This facilitates the connection between the first power terminal 110 and the external structure.

[0098] The distance between the two side walls of the first plate segment in the second direction, the distance between the two side walls of the second plate segment in the second direction, and the distance between the two side walls of the third plate segment in the second direction are equal. The side of the first plate segment close to the seventh connecting plate 119 in the second direction, the side of the second plate segment close to the seventh connecting plate 119 in the second direction, and the side of the third plate segment close to the seventh connecting plate 119 in the second direction are located in the same plane.

[0099] The lead-out plate 112 further includes an eleventh connecting segment 1121 and a twelfth connecting segment 1122 disposed on the first plate segment, and the eleventh connecting segment 1121 and the twelfth connecting segment 1122 are disposed at intervals. The eleventh connecting segment 1121 and the twelfth connecting segment 1122 are both connected to the second side of the support plate 111. In the second direction, the seventh opening slot, the eleventh connecting segment 1121, the twelfth connecting segment 1122 and the ninth opening slot are disposed at intervals in sequence.

[0100] The lead-out plate 112 is further provided with a tenth opening slot, which is disposed between the eleventh connecting section 1121 and the twelfth connecting section 1122 , and is connected to the eighth opening slot.

[0101] The processing technology of the first power terminal 110 is as follows: remove the material between the second connecting plate 114 and the eighth connecting plate 1110 by a stamping process, remove the material between the first connecting plate 113 and the second connecting plate 114 by a stamping process, remove the material between the seventh connecting plate 119 and the eighth connecting plate 1110 by a stamping process, remove the material between the fourth connecting plate 116 and the first connecting plate 113 by a stamping process, remove the material between the seventh connecting plate 119 and the sixth connecting plate 118 by a stamping process, remove the material between the third connecting plate 115 and the lead-out plate 112 by a stamping process, remove the material between the fifth connecting plate 117 and the lead-out plate 112 by a stamping process, and obtain the lead-out plate 112, the first connecting plate 113, the second connecting plate 114, the third connecting plate 115, the fourth connecting plate 116, the fifth connecting plate 117, the sixth connecting plate 118, the seventh connecting plate 119 and the eighth connecting plate 1110 by a bending process.

[0102] The second power terminal 120 includes a mounting plate 121 , a ninth connecting plate 122 , and a tenth connecting plate 123 .

[0103] The first end of the ninth connection plate 122 is disposed on the first side of the mounting plate 121, the first end of the tenth connection plate 123 is disposed on the second side of the mounting plate 121, and the first side of the mounting plate 121 is disposed opposite to the second side of the mounting plate 121. The second end of the ninth connection plate 122 is disposed on the second terminal conductive portion 13 of the first power unit 130, and the second end of the tenth connection plate 123 is disposed on the second terminal conductive portion 13 of the second power unit 140.

[0104] The second power terminal 120 further includes an eleventh connecting plate 124 and a twelfth connecting plate 125 .

[0105] The first end of the eleventh connection plate 124 is disposed on the first side of the mounting plate 121, and the first end of the twelfth connection plate 125 is disposed on the second side of the mounting plate 121. The second end of the eleventh connection plate 124 is disposed on the second terminal conductive portion 13 of the first power unit 130, and the second end of the twelfth connection plate 125 is disposed on the second terminal conductive portion 13 of the second power unit 140.

[0106] The second power terminal 120 also includes a lead-out plate 112 connected to the mounting plate 121 , and the lead-out plate 112 of the first power terminal 110 and the lead-out plate 112 of the second power terminal 120 are symmetrically arranged in the second direction.

[0107] like Fig.10 and Fig.11 As shown, in the second embodiment of the power device, the second power terminal 120 also includes a thirteenth connecting plate 126 and a fourteenth connecting plate 127 that are spaced apart. The thirteenth connecting plate 126 and the fourteenth connecting plate 127 are spaced apart. The thirteenth connecting plate 126 is connected between the eleventh connecting section 1121 of the lead-out plate 112 of the second power terminal 120 and the mounting plate 121, and the fourteenth connecting plate 127 is connected between the twelfth connecting section 1122 of the lead-out plate 112 of the second power terminal 120 and the mounting plate 121.

[0108] The thirteenth connecting plate 126 includes a thirteenth connecting section, a fourteenth connecting section and a fifteenth connecting section connected in sequence, the thirteenth connecting section is connected between the mounting plate and the fourteenth connecting section, and the fifteenth connecting section is connected between the fourteenth connecting section and the eleventh connecting section 1121 of the lead-out plate 112 of the second power terminal 120. The thirteenth connecting section extends in a direction from the first power unit to the second power unit, the fourteenth connecting section extends in a direction from the substrate to the chip conductive portion, and the fifteenth connecting section extends in a direction from the second power unit to the first power unit.

[0109] The fourteenth connecting plate 127 and the thirteenth connecting plate 126 have the same structure.

[0110] The processing technology of the second power terminal 120 is as follows: the material between the ninth connecting plate 122 and the eleventh connecting plate 124 is removed by a stamping process, the material between the tenth connecting plate 123 and the thirteenth connecting plate 126 is removed by a stamping process, the material between the twelfth connecting plate 125 and the fourteenth connecting plate 127 is removed by a stamping process, and the ninth connecting plate 122, the tenth connecting plate 123, the eleventh connecting plate 124, the twelfth connecting plate 125 and the lead-out plate are obtained by a bending process.

[0111] The distance between the side of the control unit 40 close to the multiple chips 20 and the side of the multiple chips 20 close to the control unit 40 is the eleventh distance, and the eleventh distance is between 0.8 mm and 1.2 mm, specifically, it can be 0.8 mm, 0.9 mm, 0.99 mm, 1 mm or 1.2 mm. The distance between the side of the control unit 40 close to the multiple first diodes 30 and the side of the multiple first diodes 30 close to the control unit 40 is the twelfth distance, and the twelfth distance is between 2.2 mm and 2.7 mm, specifically, it can be 2.2 mm, 2.4 mm, 2.51 mm, 2.6 mm or 2.7 mm. The ratio of the eleventh distance to the twelfth distance is between 0.296 and 0.545. In this way, the distance between the chip 20 and the first diode 30 can be ensured, and the heat dissipation of the chip 20 can be ensured.

[0112] In this embodiment, the eleventh distance is 0.99 mm, and the twelfth distance is 2.51 mm.

[0113] like Figure 7 As shown, the distance between the side of the second connecting section 1132 facing the substrate and the side of the chip conductive part 12 away from the substrate is e, the thickness of the insulating part is f, the distance between the side of the support plate 111 facing the mounting plate 121 and the side of the mounting plate 121 facing the substrate 10 is g, and the distance between the first plate section of the lead-out plate 112 of the first power terminal 110 and the first plate section of the lead-out plate 112 of the second power terminal 120 is h.

[0114] like Fig.13 As shown, the distance between the side of the first connecting plate 113 toward the seventh connecting plate 119 and the side of the ninth connecting plate 122 toward the first connecting plate 113 is i, the distance between the side of the fourteenth connecting segment of the thirteenth connecting plate 126 close to the first power unit 130 in the first direction and the first side of the support plate 111 is j, and the distance between the thirteenth connecting segment of the thirteenth connecting plate 126 and the fifth connecting segment 1141 is k.

[0115] The value of e is between 3 mm and 5 mm, which can ensure the insulation between the second connecting section 1132 and the chip conductive part 12, and also has the advantages of improving space utilization and reducing the current loop area together with the chip conductive part, thereby reducing the current loop parasitic inductance.

[0116] The value of f is between 0.3 mm and 1 mm, which can ensure the insulation effect between the control part 40 and the chip conductive part 12, while taking into account the difficulty of implementing the bonding process, avoiding the difficulty of bonding caused by f being too large, and leaving some space between e as insulation between the two.

[0117] The value of g is between 2 mm and 4 mm, so that the insulation between the first power terminal 110 and the second power terminal 120 can be ensured.

[0118] The value of h is between 4 mm and 6 mm, which can ensure the insulation between the first power terminal 110 and the second power terminal 120 and reduce the current loop area, thereby reducing the parasitic inductance of the module.

[0119] The value of i is between 2 mm and 4 mm, which can ensure the insulation between the first power terminal 110 and the second power terminal 120 and improve space utilization.

[0120] The value of j is between 3 mm and 4 mm, which can ensure the insulation between the first power terminal 110 and the second power terminal 120 and improve the space utilization.

[0121] The value of k is between 3 mm and 5 mm, which can ensure the insulation between the first power terminal 110 and the second power terminal 120 and improve the space utilization.

[0122] The distance between the two side walls of the substrate 10 in the first direction is between 48 mm and 52 mm, which can be 48 mm, 49.5 mm, 50 mm or 52 mm. The distance between the two side walls of the substrate 10 in the second direction is between 56 mm and 60 mm, which can be 56 mm, 58.2 mm, 59 mm or 60 mm.

[0123] The distance between the two side walls of the conductive body 1201 in the first direction is between 13mm and 18mm, which can be 13mm, 14mm, 15.99mm or 18mm. The distance between the two side walls of the conductive body 1201 in the second direction is between 50mm and 55mm, which can be 51mm, 52mm, 53.2mm or 55mm.

[0124] The distance between the two side walls of the extension portion 1202 in the first direction is between 6 mm and 8 mm, which can be 6 mm, 7 mm, 7.48 mm or 8 mm, and the distance between the two side walls of the extension portion 1202 in the second direction is between 6 mm and 9 mm, which can be 6 mm, 7 mm, 7.74 mm or 9 mm. In the first direction, the center line of the extension portion 1202 is collinear with the center line of the conductive body portion 1201, and the extension portion 1202 is symmetrically arranged.

[0125] In the first direction, the center line of the second terminal conductive part 13 is colinear with the center line of the conductive body part 1201, the second terminal conductive part 13 is symmetrically arranged, and the distance between the two side walls of the second terminal conductive part 13 is between 40mm and 43mm, which can be 40mm, 41mm, 41.2mm or 43mm.

[0126] In the second direction, the distance between the two side walls of the second terminal conductive portion 13 is between 16 mm and 20 mm, and may be 16 mm, 17 mm, 18.5 mm or 20 mm.

[0127] In the second direction, the side of the third terminal conductive part 60 away from the fourth terminal conductive part 70 is flush with the side wall of the conductive body part 1201, and the side of the fourth terminal conductive part 70 away from the third terminal conductive part 60 is flush with the side wall of the conductive body part 1201. The third terminal conductive part 60 and the fourth terminal conductive part 70 are symmetrically arranged about the center line of the conductive body part 1201, and the distance between the third terminal conductive part 60 and the second terminal conductive part 13 is between 1 mm and 4 mm, which can be 1 mm, 2.5 mm, 3 mm or 4 mm.

[0128] In the first direction, the distance between the third terminal conductive part 60 and the conductive body part 1201 is between 1 and 4 mm, which can be 1 mm, 2 mm, 2.51 mm or 4 mm. In the first direction, the distance between the two side walls of the third terminal conductive part 60 is between 13 mm and 18 mm, which can be 13 mm, 14 mm, 16.5 mm or 18 mm. In the second direction, the distance between the two side walls of the third terminal conductive part 60 is between 2 mm and 5 mm, which can be 2 mm, 3 mm, 3.5 mm or 5 mm. The fourth terminal conductive part 70 has the same size as the third terminal conductive part 60. In the first direction, the side of the fourth terminal conductive part 70 away from the conductive body part 1201, the side of the third terminal conductive part 60 away from the conductive body part 1201, and the side of the second terminal conductive part 13 away from the conductive body part 1201 are arranged flush.

[0129] In the first direction, the distance between the first diode 30 and the chip 20 is between 7mm and 10mm, which can be 7mm, 8mm, 9.4mm or 10mm. The distance between the chip 20 and the second diode 50 is between 7mm and 10mm, which can be 7mm, 8mm, 9mm or 10mm. The distance between two adjacent chips 20 is between 1mm and 3mm, which can be 1mm, 2mm, 2.17mm or 3mm. The distance between the part of the first diode 30 disposed between the second diode 50 and the third terminal conductive portion 60 is between 0.5mm and 2mm, which can be 0.5mm, 1mm, 1.5mm or 2mm. The distance between the part of the first diode 30 disposed between the second diode 50 and the fourth terminal conductive portion 70 is between 0.5mm and 2mm, which can be 0.5mm, 1mm, 1.5mm or 2mm. The distance between the two chips located on both sides of the second diode 50 is between 8mm and 11mm, which can be 8mm, 9mm, 9.5mm or 11mm.

[0130] In the second direction, the distance between the side of the first diode 30 away from the conductive body portion 1201 and the side of the second terminal conductive portion 13 away from the conductive body portion 1201 is between 4 mm and 7 mm, and may be 4 mm, 5 mm, 6.2 mm or 7 mm.

[0131] The second diode 50 is disposed in the middle of the extension portion 1202 .

[0132] The distance between the two side walls of the first diode 30 in the first direction is between 9 mm and 12 mm, which may be 9 mm, 10 mm, 11.8 mm or 12 mm. The distance between the two side walls of the first diode 30 in the second direction is between 5 mm and 8 mm, which may be 5 mm, 6 mm, 6.8 mm or 8 mm.

[0133] When the power device in the second embodiment of the power device is tested, the voltage is 6.5 kV, and the current flowing between the first power terminal 110 and the second power terminal 120 is 400 A.

[0134] In this embodiment, the distance between the two side walls of the substrate 10 in the first direction is 49.5 mm, and the distance between the two side walls of the substrate 10 in the second direction is 58.2 mm.

[0135] The distance between the two side walls of the conductive body portion 1201 in the first direction is 15.99 mm, and the distance between the two side walls of the conductive body portion 1201 in the second direction is 53.2 mm.

[0136] The distance between the two side walls of the extension part 1202 in the first direction is 7.48 mm, and the distance between the two side walls of the extension part 1202 in the second direction is 7.74 mm. In the first direction, the center line of the extension part 1202 is collinear with the center line of the conductive body part 1201, and the extension part 1202 is symmetrically arranged.

[0137] In the first direction, the center line of the second terminal conductive part 13 is colinear with the center line of the conductive body part 1201, the second terminal conductive part 13 is symmetrically arranged, the distance between the two side walls of the second terminal conductive part 13 is 41.2 mm, and the distance between the second terminal conductive part 13 and the conductive body part 1201 is 0.51 mm.

[0138] In the second direction, the distance between the two side walls of the second terminal conductive portion 13 is 18.5 mm.

[0139] The interval between the avoidance recess 131 and the extension portion 1202 is 0.51 mm.

[0140] In the second direction, the side of the third terminal conductive part 60 away from the fourth terminal conductive part 70 is flush with the side wall of the conductive body part 1201, and the side of the fourth terminal conductive part 70 away from the third terminal conductive part 60 is flush with the side wall of the conductive body part 1201. The third terminal conductive part 60 and the fourth terminal conductive part 70 are symmetrically arranged about the center line of the conductive body part 1201, and the distance between the third terminal conductive part 60 and the second terminal conductive part 13 is 2.5 mm.

[0141] In the first direction, the distance between the third terminal conductive part 60 and the conductive body part 1201 is 2.51 mm. In the first direction, the distance between the two side walls of the third terminal conductive part 60 is 16.5 mm. In the second direction, the distance between the two side walls of the third terminal conductive part 60 is 3.5 mm. The fourth terminal conductive part 70 has the same size as the third terminal conductive part 60. In the first direction, the side of the fourth terminal conductive part 70 away from the conductive body part 1201, the side of the third terminal conductive part 60 away from the conductive body part 1201, and the side of the second terminal conductive part 13 away from the conductive body part 1201 are arranged flush.

[0142] In the first direction, the distance between the first diode 30 and the chip 20 is 9.4 mm, the distance between the chip 20 and the second diode 50 is 8 mm, the distance between two adjacent chips 20 is 2.17 mm, the distance between the part of the first diode 30 disposed between the second diode 50 and the third terminal conductive portion 60 is 1 mm, and the distance between the part of the first diode 30 disposed between the second diode 50 and the fourth terminal conductive portion 70 is 1 mm. The distance between the two chips located on both sides of the second diode 50 is 9.5 mm.

[0143] In the second direction, the distance between the side of the first diode 30 away from the conductive body portion 1201 and the side of the second terminal conductive portion 13 away from the conductive body portion 1201 is 6.2 mm.

[0144] The second diode 50 is disposed in the middle of the extension portion 1202 .

[0145] The chip 20 has an outer dimension of 8 mm×8 mm. The distance between two side walls of the first diode 30 in the first direction is 11.8 mm, and the distance between two side walls of the first diode 30 in the second direction is 6.8 mm.

[0146] like Fig.14 As shown, when the power unit of this embodiment is tested, the maximum temperature of the chip 20 is 85°C (corresponding to Fig.14 The maximum temperature of the first diode 30 and the second diode 50 is 76° C. Compared with the prior art, in which the maximum temperature of the chip is 96° C. and the maximum temperature of the diode is 84° C., the technical solution of this embodiment effectively reduces the temperature of the power unit when in use.

[0147] Fig.14 The minimum temperature is 40℃.

[0148] The equivalent heat dissipation area of ​​the power unit is 989.27 square millimeters, which is 18.3% higher than the equivalent heat dissipation area of ​​836.34 square millimeters in the prior art.

[0149] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the devices or elements referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention. The directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0150] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used herein are interpreted accordingly.

[0151] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of the present invention.

[0152] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A power unit, characterized in that: include: A substrate (10), wherein the substrate (10) is provided with a first terminal conductive portion (11), a chip conductive portion (12), and a second terminal conductive portion (13) arranged in sequence and at intervals in a first direction, and the chip conductive portion (12) is conductively connected to the second terminal conductive portion (13); A chip (20) is arranged on the chip conductive portion (12), a first side of the chip (20) is connected to the chip conductive portion (12), and a second side of the chip (20) is conductively connected to the first terminal conductive portion (11); A first diode (30) is arranged on the second terminal conductive portion (13); A control unit (40) is arranged on the substrate (10) and connected to the chip (20); the control unit (40) is arranged between the chip (20) and the first diode (30).

2. The power unit according to claim 1, characterized in that: The power unit further comprises a second diode (50), the second terminal conductive portion (13) is conductively connected to a first end of the second diode (50), and the chip conductive portion (12) is conductively connected to a second end of the second diode (50).

3. The power unit according to claim 2, characterized in that: The second terminal conductive portion (13) is provided with an avoidance recess (131); the chip conductive portion (12) comprises a conductive body portion (1201) and an extension portion (1202); the extension portion (1202) extends into the avoidance recess (131); the chip (20) is arranged on the conductive body portion (1201); and the second diode (50) is arranged on the extension portion (1202).

4. The power unit according to claim 2 or 3, characterized in that: The power unit further comprises a third terminal conductive portion (60) connected to the first terminal conductive portion (11), and a side of the first diode (30) away from the second terminal conductive portion (13) is connected to the third terminal conductive portion (60).

5. The power unit according to claim 4, characterized in that: The third terminal conductive portion (60) and the second terminal conductive portion (13) are arranged at intervals in a second direction, and the second direction is arranged perpendicular to the first direction.

6. The power unit according to claim 4, characterized in that: There are a plurality of first diodes (30), and the plurality of first diodes (30) are arranged at intervals in the second direction. The power unit further comprises a fourth terminal conductive portion (70), and the fourth terminal conductive portion (70), the second terminal conductive portion (13), and the third terminal conductive portion (60) are arranged at intervals in the second direction. Some of the first diodes (30) in the plurality of first diodes (30) are connected to the third terminal conductive portion (60), and the remaining first diodes (30) in the plurality of first diodes (30) are connected to the fourth terminal conductive portion (70).

7. The power unit according to claim 6, characterized in that: The portion of the first diode (30) connected to the third terminal conductive portion (60) is arranged between the second diode (50) and the third terminal conductive portion (60), and the portion of the first diode (30) connected to the fourth terminal conductive portion (70) is arranged between the second diode (50) and the fourth terminal conductive portion (70).

8. A power device, comprising a base plate (100), a power unit arranged on the base plate (100), a first power terminal (110) and a second power terminal (120), characterized in that: The power unit is a power unit according to any one of claims 1 to 5, wherein the first power terminal (110) is conductively connected to a first terminal conductive portion (11) of the power unit, and the second power terminal (120) is conductively connected to a second terminal conductive portion (13) of the power unit.

9. A power device, comprising a base plate (100), a power unit arranged on the base plate (100), a first power terminal (110) and a second power terminal (120), characterized in that: The power unit is the power unit according to claim 6 or 7, the first power terminal (110) is conductively connected to the first terminal conductive part (11) of the power unit, and the second power terminal (120) is conductively connected to the second terminal conductive part (13) of the power unit.

10. The power device according to claim 9, characterized in that: There are multiple power units, and the multiple power units include a first power unit (130) and a second power unit (140); the first power terminal (110) is connected to both the first terminal conductive part (11) of the first power unit (130) and the first terminal conductive part (11) of the second power unit (140); and the second power terminal (120) is connected to both the second terminal conductive part (13) of the first power unit (130) and the second terminal conductive part (13) of the second power unit (140).

11. The power device according to claim 10, characterized in that: The first terminal conductive portion (11) of the first power unit (130), the second terminal conductive portion (13) of the first power unit (130), the second terminal conductive portion (13) of the second power unit (140), and the first terminal conductive portion (11) of the second power unit (140) are sequentially arranged at intervals in a first direction.

12. The power device according to claim 10, characterized in that: The first power terminal (110) comprises a support plate (111), a lead plate (112), a first connecting plate (113) and a second connecting plate (114); a first end of the first connecting plate (113) is connected to a first side of the support plate (111); the first connecting plate (113) is folded back and has an overlapping section (11305) overlapping the support plate (111); a second end of the first connecting plate (113) is connected to a first terminal conductive portion (11) of the first power unit (130); a first end of the second connecting plate (114) is connected to a first side of the support plate (111); a second end of the second connecting plate (114) is connected to a first terminal conductive portion (11) of the second power unit; one end of the lead plate (112) is connected to a second side of the support plate (111); and the first side of the support plate (111) and the second side of the support plate (111) are arranged opposite to each other.

13. The power device according to claim 12, characterized in that: The first power terminal (110) further comprises a fifth connecting plate (117) and a sixth connecting plate (118), wherein a first end of the fifth connecting plate (117) is connected to a second side of the support plate (111), and a second end of the fifth connecting plate (117) is connected to a fourth terminal conductive portion (70) of the first power unit (130), a first end of the sixth connecting plate (118) is connected to a first side of the support plate (111), and a second end of the sixth connecting plate (118) is connected to a fourth terminal conductive portion (70) of the second power unit (140).

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