Method, apparatus, and lithography machine for treating lithography contaminants

Abstract

The present application discloses a photolithography mask, a method for treating photolithography contaminants, a device and a lithography machine. The photolithography mask includes a photolithography mask substrate and an alkaline titanium oxynitride catalytic layer. The method includes providing a vacuum chamber and a photolithography mask having hydrogenated metallic contaminants, and introducing an acidic oxygen-containing cleaning gas; providing UV light to excite the photocatalytic activity of the titanium oxynitride catalytic layer, so that the cleaning gas generates reactive oxygen atoms to react with the hydrogenated metallic contaminants, producing volatile gaseous compounds; and discharging the volatile gaseous compounds. The device is used for treating hydrogenated metallic contaminants on the photolithography mask. The device includes a box body, a vacuum pump, a UV light source and a cleaning gas source. The alkaline titanium oxynitride catalytic layer facilitates the interaction between the acidic oxygen-containing cleaning gas and the titanium oxynitride catalytic layer, further promoting the occurrence of chemical reactions and further improving the cleaning effect. At the same time, the problem of metal contamination caused by the hydrogenation of metal oxide-based photoresist is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of lithography pollutant treatment, and in particular to a method, device and lithography machine for treating lithography pollutants. Background Art

[0002] At present, extreme ultraviolet or electron beam photoresist materials are mainly divided into three categories: polymer type, molecular glass type and metal oxide nanoparticle type. Among them, metal oxide nanoparticle photoresists are expected to significantly improve lithography sensitivity and lithography resolution. Although metal oxide-based photoresists show great application potential in extreme ultraviolet lithography or electron beam lithography. Metal oxide-based photoresists are regarded as the most promising new generation of photoresists. However, compared with traditional photoresists, the introduction of metal oxide nanoparticles also brings new problems to the lithography process.

[0003] Traditional photoresists are organic polymer molecules. During the exposure process of the photoresist, a degassing effect will occur, generating gaseous organic molecules that diffuse into the vacuum chamber. In the device area irradiated by extreme ultraviolet light or electron beam, hydrocarbon molecules will be cracked into free carbon, forming carbon deposition pollution on the surfaces of devices, lithography masks, etc., resulting in a decrease in optical reflectivity and affecting work efficiency. In order to inhibit the process of carbon pollution generation, hydrogen is usually filled into the vacuum chamber as a balance gas. Under the action of extreme ultraviolet light, hydrogen molecules are excited to generate hydrogen radicals, which delay the development process of carbon pollution through the reaction of hydrogen with carbon. Due to the balance gas effect of hydrogen, new problems are brought to metal oxide-based photoresists containing organic substances. Hydrogen radicals not only react with carbon, but also react with metal elements to produce hydrogenation reactions. Hydrogenated metals will deposit on the device surface, generating metallic pollution. For the metallic pollution formed on devices and lithography masks, the existing treatment methods mainly use cleaning gases for cleaning, but the cleaning effect is generally average. Summary of the Invention

[0004] In view of the above problems, the present invention proposes at least one solution, and provides a method, device and lithography machine for treating lithography pollutants.

[0005] The present application provides a lithography mask, including a lithography mask substrate and a titanium oxynitride catalytic layer provided on the surface of the lithography mask substrate. The titanium oxynitride catalytic layer is used for catalyzing the cleaning treatment of lithography pollutants, and the surface property of the titanium oxynitride catalytic layer is alkaline.

[0006] Titanium oxynitride is both an optical thin film material and a photocatalytic chemical reaction catalyst. In the field of photocatalytic conversion of carbon dioxide, titanium oxynitride can be used as a catalyst to promote the photocatalytic reduction reaction of carbon dioxide under the irradiation of ultraviolet light.

[0007] Since carbon dioxide molecules are acidic oxides and the surface property of the titanium oxynitride catalytic layer is alkaline, it is beneficial to adsorb carbon dioxide on the surface of the titanium oxynitride catalytic layer and interact with carbon dioxide, thereby promoting chemical reactions and improving the cleaning effect during cleaning.

[0008] Furthermore, the thickness of the titanium oxynitride catalytic layer is 1 nm to 3 nm.

[0009] Furthermore, the photolithography mask substrate includes a substrate and multiple film layers provided on the substrate. The multiple film layers include multiple Mo layers and Si layers stacked in sequence.

[0010] In actual photolithography applications, the multiple film layers arranged with multiple layers of Mo / Si are used to improve the reflectivity of extreme ultraviolet light.

[0011] The titanium oxynitride thin film is a ternary TiN x O y material system, which has two binary parent compounds, TiN and TiO 2 While having properties, it also has the characteristics of photocatalysis and alkalinity. Compared with other catalytic layers that only have alkalinity after modification treatment, its controllability, reliability, and stability are stronger. That is, the titanium oxynitride catalytic layer can be used as a catalytic layer, and at the same time, the titanium oxynitride catalytic layer also meets the low absorption characteristics of optical thin films and can be used as a protective layer of optical thin films. For the specific properties of titanium oxynitride, please refer to the relevant description in "Electronic materials--Electrical and optical properties of titanium oxynitride thin films" in 《JMater Sci》(2020)55:5123-5134.

[0012] The titanium oxynitride catalytic layer can not only catalyze the occurrence of chemical reactions. In the field of extreme ultraviolet optical thin film processing, the titanium oxynitride thin film is often plated as a protective layer on the surface of the standard Mo / Si multiple film layer to prevent the multiple film layer from oxidation. At the same time, the good optical properties of titanium oxynitride can maintain the high reflectivity of the multiple film layer to extreme ultraviolet light.

[0013] Furthermore, a multiple film layer of Mo / Si is prepared on the surface of the substrate of the photolithography mask by magnetron sputtering.

[0014] Furthermore, a titanium oxynitride catalytic layer is formed on the surface of the multiple film layer by plating.

[0015] This application also provides a method for treating photolithography pollutants, including the following steps:

[0016] A vacuum chamber is provided, in which a photolithography mask is arranged. A photolithography contaminant formed by a photolithography process is deposited on the surface of the photolithography mask. The photolithography contaminant includes a hydrogenated metallic contaminant generated by photolithography. The photolithography mask has a titanium oxynitride catalytic layer, and the surface property of the titanium oxynitride catalytic layer is alkaline;

[0017] Continuously introduce an acidic oxygen-containing cleaning gas into the vacuum chamber;

[0018] Provide UV light, which is used to irradiate the titanium oxynitride catalytic layer of the photolithography mask and excite the photocatalytic activity of the titanium oxynitride catalytic layer, so that the acidic oxygen-containing cleaning gas generates active oxygen atoms. The active oxygen atoms are used to react with the hydrogenated metallic contaminant to generate a volatile gaseous compound;

[0019] Exhaust the volatile gaseous compound from the vacuum chamber.

[0020] The oxygen-containing cleaning gas mentioned in this application refers to a cleaning gas containing oxygen element.

[0021] In this method, the catalytic activity of the titanium oxynitride catalytic layer of the photolithography mask is excited by UV light irradiation, and under the action of UV light irradiation, the oxygen-containing cleaning gas is induced to generate active oxygen atoms to react with the hydrogenated metal contaminants formed by the photolithography process, so as to realize the treatment of contaminants. The alkaline titanium oxynitride catalytic layer can adsorb more acidic oxygen-containing cleaning gas on the surface of the titanium oxynitride catalytic layer while the catalytic reaction occurs, further promoting the chemical reaction and further improving the cleaning effect. That is, the present invention provides a solution for the popularization and application of metal oxide-based photoresists in actual photolithography systems, solves the metal pollution problem caused by the hydrogenation of metal oxide-based photoresists containing organic matter, and optimizes the cleaning effect.

[0022] Further, the active oxygen atoms generated by the oxygen-containing cleaning gas have weak oxidizing properties. While realizing the treatment of contaminants, it can avoid over-treatment of the film layer materials of optical components.

[0023] Further, the oxygen-containing cleaning gas is a carbon dioxide cleaning gas.

[0024] Further, the photolithography process is carried out by an extreme ultraviolet lithography machine, and the photoresist forming the photolithography contaminant is a metal nanoparticle photoresist.

[0025] The nanoparticles of the metal nanoparticle photoresist are HfO 2 cores or ZrO 2 cores.

[0026] Further, the wavelength of the UV light is 260 nm to 387.5 nm, and the power is less than or equal to 75 W.

[0027] Excessive power of the UV light may affect the performance of the mask or even damage the device.

[0028] Furthermore, the initial vacuum degree of the vacuum chamber is less than or equal to 10 -5 Pa;

[0029] After introducing an acidic oxygen-containing cleaning gas, the vacuum degree of the vacuum chamber is controlled to be less than or equal to 10 -1 Pa range.

[0030] The present application also provides a lithography contaminant treatment device for treating hydrogenated metal contaminants on a lithography mask. The lithography mask has a titanium oxynitride catalytic layer, and the titanium oxynitride catalytic layer is used to catalyze the cleaning treatment of lithography contaminants. The surface property of the titanium oxynitride catalytic layer is alkaline. The lithography contaminant treatment device includes: a box body, a vacuum pump, a UV light source, and a cleaning gas source;

[0031] A vacuum chamber is formed inside the box body, and the vacuum chamber is used to place the lithography mask to be cleaned and provide a reaction space for the cleaning treatment;

[0032] The vacuum pump is connected to the vacuum chamber, and the vacuum pump is used to evacuate the vacuum chamber;

[0033] The cleaning gas source is connected to the vacuum chamber through a pipeline, and the cleaning gas source is used to introduce a cleaning gas into the vacuum chamber. The cleaning gas is an acidic oxygen-containing cleaning gas;

[0034] The UV light source is arranged inside the vacuum chamber, and the UV light source is used to provide UV light. The UV light is used to irradiate the titanium oxynitride catalytic layer of the lithography mask and excite the photocatalytic activity of the titanium oxynitride catalytic layer, so that the acidic oxygen-containing cleaning gas generates active oxygen atoms.

[0035] The lithography contaminant treatment device is the device required for implementing the above-mentioned lithography contaminant treatment method. The lithography contaminant treatment device has a simple structure and is easy to operate. Combined with the above operation method, it can further promote the application of metal oxide-based photoresist in an actual lithography system.

[0036] Furthermore, the UV light source is a mercury lamp, the wavelength of the UV light is 260 nm to 387.5 nm, and the power is less than or equal to 75 W;

[0037] Furthermore, the box body is also provided with an exhaust port, and the exhaust port is used to discharge the gas generated after the contaminant treatment in the vacuum chamber;

[0038] A flow meter is provided on the pipeline connecting the cleaning gas source and the vacuum chamber.

[0039] The flow meter is used to monitor and control the flow rate of the processing gas to ensure the normal operation and safety of the system.

[0040] This application also provides a lithography machine, which includes a vacuum chamber and a cleaning gas source. A lithography mask is arranged in the vacuum chamber. The lithography mask includes a titanium oxynitride catalytic layer, and the titanium oxynitride catalytic layer is used to catalyze the cleaning treatment of lithography pollutants. The surface property of the titanium oxynitride catalytic layer is alkaline;

[0041] There is a UV light source in the vacuum chamber. The UV light source is used to provide UV light, and the UV light is used to irradiate the titanium oxynitride catalytic layer of the lithography mask and excite the photocatalytic activity of the titanium oxynitride catalytic layer, so that acidic oxygen-containing cleaning gas generates reactive oxygen atoms;

[0042] The cleaning gas source is communicated with the vacuum chamber, and the cleaning gas source is used to introduce cleaning gas into the vacuum chamber.

[0043] That is, in actual use, by arranging a UV light source and introducing a cleaning gas source in the vacuum chamber of the lithography machine, after lithography processing by an extreme ultraviolet lithography machine or an electron beam lithography process, the lithography mask with accumulated hydrogenated metal pollutants can be directly cleaned in the vacuum chamber, simplifying the steps of disassembling and reinstalling the optical element or the lithography mask, and greatly improving the operation efficiency.

[0044] Furthermore, an exhaust port is provided on the vacuum chamber for discharging the gas after the pollutant cleaning treatment.

[0045] In actual use, the vacuum chamber can be a lithography chamber.

[0046] The beneficial effects of the present invention are:

[0047] (1) To meet the actual use needs of metal oxide-based photoresists, the present invention proposes a lithography mask with a titanium oxynitride catalytic layer, whose surface property is alkaline and has photocatalytic properties. Under the condition of ensuring multi-layer high reflectivity, it provides photocatalytic conditions for the hydrogenated metal pollutant treatment process after actual lithography exposure, and adsorbs more acidic oxygen-containing cleaning gas on the surface of the titanium oxynitride catalytic layer, further promoting the occurrence of chemical reactions and further improving the cleaning effect. Compared with other catalytic layers that become alkaline only after modification treatment, the controllability, reliability and stability are stronger.

[0048] (2) Titanium oxynitride has the optical properties of an optical thin film as a protective layer material and also has photocatalytic properties for carbon dioxide reduction. The setting of the titanium oxynitride catalytic layer can not only prevent the oxidation of the Mo / Si multi-layer film and extend the service life of the mask, but also provide a catalytic benefit for the treatment process of the metallic contamination caused by the lithography exposure of metal oxide-based photoresists.

[0049] (3) In combination with the equipment provided by the present invention, this method excites the catalytic activity of the titanium oxynitride catalytic layer of the lithography mask through the action of UV light irradiation, and catalyzes the reaction of the carbon dioxide cleaning gas with the hydrogenated metallic contaminants formed by the lithography process under the action of UV light irradiation, thereby realizing the treatment of the contaminants. The present invention provides a solution for the popularization and application of metal oxide-based photoresists in actual lithography systems, and solves the problem of metal contamination caused by the hydrogenation of metal oxide-based photoresists.

[0050] (4) By setting a UV light source and introducing a cleaning gas source in the vacuum chamber of the lithography machine, after lithography processing by an extreme ultraviolet lithography machine or an electron beam lithography process, the lithography mask with accumulated hydrogenated metallic contaminants can be directly cleaned in the vacuum chamber, simplifying the steps of disassembling and reinstalling the optical element or the lithography mask, and greatly improving the operation efficiency. Description of the Drawings

[0051] Figure 1 is a schematic structural diagram of the lithography mask in the embodiment of the present invention;

[0052] Figure 2 is a schematic flow diagram of the method for treating lithography contaminants in the embodiment of the present invention;

[0053] Figure 3 is a schematic diagram of the structure and principle of using the lithography contaminant treatment equipment to treat contaminants in the embodiment of the present invention.

[0054] Each reference numeral in the figure is as follows:

[0055] 1, box body; 11, vacuum chamber; 12, exhaust port; 2, vacuum pump; 3, UV light source; 31, UV light; 4, cleaning gas source; 41, flow meter; 5, lithography mask; 50, hydrogenated metallic contaminants; 51, lithography mask substrate; 511, substrate; 512, Mo layer; 513, Si layer; 52, titanium oxynitride catalytic layer; 6, oxygen-containing cleaning gas; 60, active oxygen atoms; 7, volatile gaseous compounds. Detailed Embodiments

[0056] The present invention will be described in detail below with reference to the accompanying drawings.

[0057] As Figure 1As shown in the figure, the present application provides a photolithography mask. The photolithography mask 5 includes a photolithography mask substrate 51 and a titanium oxynitride catalytic layer 52 disposed on the surface of the photolithography mask substrate 51. The titanium oxynitride catalytic layer 52 is used to catalyze the cleaning treatment of photolithography contaminants, and the surface property of the titanium oxynitride catalytic layer 52 is alkaline.

[0058] Titanium oxynitride is both an optical thin film material and a photocatalytic chemical reaction catalyst. In the field of photocatalytic conversion of carbon dioxide, titanium oxynitride can be used as a catalyst. Under the irradiation of ultraviolet light, it promotes the photocatalytic reduction reaction of carbon dioxide (i.e., catalyzes the cleaning treatment of photolithography contaminants).

[0059] Since carbon dioxide molecules are acidic oxides, the surface property of the titanium oxynitride catalytic layer 52 being alkaline is beneficial to the adsorption of carbon dioxide on the surface of the titanium oxynitride catalytic layer 52, thereby promoting the occurrence of chemical reactions and improving the cleaning effect during cleaning.

[0060] In this embodiment, the thickness of the titanium oxynitride catalytic layer 52 is 1 nm to 3 nm.

[0061] In this embodiment, the photolithography mask substrate 51 includes a substrate 511 and multiple film layers disposed on the substrate 511. The multiple film layers include a Mo layer 512 and a Si layer 513 stacked in sequence.

[0062] During actual photolithography operation, the multiple film layers with multiple Mo / Si settings are used to improve the reflectivity of extreme ultraviolet light.

[0063] The titanium oxynitride catalytic layer 52 can not only catalyze the occurrence of chemical reactions. In the field of extreme ultraviolet optical thin film processing, titanium oxynitride thin films are often plated as protective layers on the surface of standard Mo / Si multiple film layers to prevent the oxidation of the multiple film layers. At the same time, the good optical properties of titanium oxynitride can maintain the high reflectivity of the multiple film layers to extreme ultraviolet light.

[0064] In this embodiment, a multiple film layer of Mo / Si is prepared on the surface of the substrate 511 of the photolithography mask by means of magnetron sputtering.

[0065] In this embodiment, the titanium oxynitride catalytic layer 52 is formed on the surface of the multiple film layer by means of plating.

[0066] As Figures 1 to 3 shown in the figure, the present application also provides a method for treating photolithography contaminants, including the following steps:

[0067] S1: Provide a vacuum chamber 11. A photolithography mask 5 is disposed in the vacuum chamber 11. Photolithography contaminants formed by a photolithography process are deposited on the surface of the photolithography mask 5. The photolithography contaminants include hydrogenated metallic contaminants 50 generated by photolithography. The photolithography mask 5 has a titanium oxynitride catalytic layer 52, and the surface property of the titanium oxynitride catalytic layer 52 is alkaline;

[0068] S2: Continuously introduce an acidic oxygen-containing cleaning gas 6 into the vacuum chamber 11;

[0069] S3: Provide UV light 31, which is used to irradiate the titanium oxynitride catalytic layer 52 of the photolithography mask 5 and excite the photocatalytic activity of the titanium oxynitride catalytic layer 52, so that the acidic oxygen-containing cleaning gas 6 generates reactive oxygen atoms 60. The reactive oxygen atoms 60 are used to react with the hydrogenated metal contaminants 50 to produce volatile gaseous compounds 7;

[0070] S4: Discharge the volatile gaseous compound 7 from the vacuum chamber 11.

[0071] This method excites the catalytic activity of the titanium oxynitride catalytic layer 52 of the photolithography mask 5 through the irradiation of UV light 31, and induces the acidic oxygen-containing cleaning gas 6 to generate reactive oxygen atoms 60 to react with the hydrogenated metal contaminants formed in the photolithography process, thereby realizing the treatment of contaminants. While the catalytic reaction occurs, the basic titanium oxynitride catalytic layer 52 can adsorb more acidic oxygen-containing cleaning gas 6 on the surface of the titanium oxynitride catalytic layer 52, further promoting the chemical reaction and further improving the cleaning effect. That is, the present invention provides a solution for the popularization and application of metal oxide-based photoresists in actual photolithography systems, solves the problem of metal contamination caused by the hydrogenation of metal oxide-based photoresists containing organic substances, and optimizes the cleaning effect.

[0072] In this embodiment, the reactive oxygen atoms 60 generated by the oxygen-containing cleaning gas 6 have weak oxidizing properties, which can avoid over-treatment of the film layer materials of optical components while realizing the treatment of contaminants.

[0073] In this embodiment, the oxygen-containing cleaning gas 6 is a carbon dioxide cleaning gas.

[0074] In this embodiment, the photolithography process is carried out using an extreme ultraviolet lithography machine, and the photoresist forming the photolithography contaminants is a metal nanoparticle photoresist.

[0075] The nanoparticles of the metal nanoparticle photoresist are HfO 2 cores or ZrO 2 cores.

[0076] In this embodiment, the wavelength of the UV light 31 is 260 nm to 387.5 nm, and the power is less than or equal to 75 W.

[0077] Too high power of the UV light 31 will affect the performance of the mask and even damage the device.

[0078] In this embodiment, the initial vacuum degree of the vacuum chamber 11 is less than or equal to 10 -5 Pa;

[0079] After introducing the acidic oxygen-containing cleaning gas 6, the vacuum degree of the vacuum chamber 11 is controlled to be less than or equal to 10 -1 Pa range.

[0080] In actual use, the cleaning time is determined according to the amount of lithography pollutants. When other conditions are the same, the greater the amount of lithography pollutants, the longer the cleaning time.

[0081] Such as Figure 1 and Figure 3 As shown, the present application also provides a processing device for lithography pollutants, which is used to process the hydrogenated metal pollutants 50 on the lithography mask 5. The lithography mask 5 has a titanium oxynitride catalytic layer 52, and the titanium oxynitride catalytic layer 52 is used to catalyze the cleaning treatment of lithography pollutants. The surface property of the titanium oxynitride catalytic layer 52 is alkaline. The lithography pollutant processing device includes: a box body 1, a vacuum pump 2, a UV light source 3, and a cleaning gas source 4;

[0082] A vacuum chamber 11 is formed inside the box body 1. The vacuum chamber 11 is used to place the lithography mask 5 to be cleaned and provide a reaction space for the cleaning treatment;

[0083] The vacuum pump 2 is connected to the vacuum chamber 11, and the vacuum pump 2 is used to evacuate the vacuum chamber 11;

[0084] The cleaning gas source 4 is connected to the vacuum chamber 11 through a pipeline. The cleaning gas source 4 is used to introduce a cleaning gas into the vacuum chamber 11, and the cleaning gas is an acidic oxygen-containing cleaning gas 6;

[0085] The UV light source 3 is arranged inside the vacuum chamber 11. The UV light source 3 is used to provide UV light 31, and the UV light 31 is used to irradiate the titanium oxynitride catalytic layer 52 of the lithography mask 5 and excite the photocatalytic activity of the titanium oxynitride catalytic layer 52, so that the acidic oxygen-containing cleaning gas 6 generates active oxygen atoms 60.

[0086] The lithography pollutant processing device is the device required for implementing the above-mentioned lithography pollutant processing method. The lithography pollutant processing device has a simple structure and is easy to operate. Combined with the above operation method, it can further promote the application of metal oxide-based photoresist in the actual lithography system.

[0087] In this embodiment, the UV light source 3 is a mercury lamp, the wavelength of the UV light 31 is 260 nm to 387.5 nm, and the power is less than or equal to 75 W;

[0088] In this embodiment, the box body 1 also forms an exhaust port 12, and the exhaust port 12 is used to discharge the gas generated after the pollutant treatment in the vacuum chamber 11;

[0089] A flow meter 41 is arranged on the pipeline connecting the cleaning gas source 4 and the vacuum chamber 11.

[0090] The flowmeter 41 is used to monitor and control the flow rate of the process gas to ensure the normal operation and safety of the system.

[0091] This application also provides a lithography machine, which includes a vacuum chamber and a cleaning gas source. A lithography mask is arranged in the vacuum chamber. The lithography mask includes a titanium oxynitride catalytic layer, which is used to catalyze the cleaning treatment of lithography pollutants. The surface property of the titanium oxynitride catalytic layer is alkaline;

[0092] There is a UV light source in the vacuum chamber. The UV light source is used to provide UV light, which is used to irradiate the titanium oxynitride catalytic layer of the lithography mask and excite the photocatalytic activity of the titanium oxynitride catalytic layer, so that the acidic oxygen-containing cleaning gas generates active oxygen atoms;

[0093] The cleaning gas source is communicated with the vacuum chamber, and the cleaning gas source is used to introduce cleaning gas into the vacuum chamber.

[0094] That is, in actual use, by arranging a UV light source and introducing a cleaning gas source in the vacuum chamber of the lithography machine, after lithography processing by an extreme ultraviolet lithography machine or an electron beam lithography process, the lithography mask with accumulated hydrogenated metal pollutants can be directly cleaned in the vacuum chamber, simplifying the steps of disassembling and reinstalling the optical element or the lithography mask, and greatly improving the operation efficiency.

[0095] In this embodiment, an exhaust port is arranged on the vacuum chamber for discharging the gas after the pollutant cleaning treatment.

[0096] In actual use, the vacuum chamber can be a lithography chamber.

[0097] The above are only the preferred embodiments of the present invention, and thus do not limit the patent protection scope of the present invention. Any equivalent structural transformation made by using the content of the specification and drawings of the present invention, directly or indirectly applied in other related technical fields, shall be included in the protection scope of the present invention by the same token.

Claims

1. A method for treating photolithography contaminants, characterized in that: The steps include: A vacuum chamber is provided, wherein a photolithography mask is arranged in the vacuum chamber, photolithography contaminants formed by a photolithography process are deposited on the surface of the photolithography mask, the photoresist forming the photolithography contaminants is a metal nanoparticle photoresist, the photolithography contaminants include hydrogenated metallic contaminants generated by photolithography, the photolithography mask has a titanium oxynitride catalyst layer, and the surface property of the titanium oxynitride catalyst layer is alkaline; Continuously introducing an acidic oxygen-containing cleaning gas into the vacuum chamber, wherein the oxygen-containing cleaning gas is a carbon dioxide cleaning gas, and the surface of the titanium oxynitride catalyst layer adsorbs carbon dioxide and interacts with the carbon dioxide; Providing UV light, wherein the UV light is used to irradiate the titanium oxynitride catalyst layer of the photolithography mask and stimulate the photocatalytic activity of the titanium oxynitride catalyst layer to generate active oxygen atoms from the acidic oxygen-containing cleaning gas, wherein the active oxygen atoms are used to react with the hydrogenated metallic pollutants to generate volatile gaseous compounds; The volatile gaseous compounds are exhausted from the vacuum chamber.

2. A method for treating photolithography contamination according to claim 1, characterized in that: The wavelength of the UV light is 260nm~387.5nm, and the power is less than or equal to 75W.

3. The method for treating photolithography contamination according to claim 1, characterized in that: The initial vacuum degree of the vacuum chamber is less than or equal to 10 -5 Pa; After the acidic oxygen-containing cleaning gas is introduced, the vacuum degree of the vacuum chamber is controlled to be less than or equal to 10 -1 Pa range.

4. A photolithography contamination treatment device, characterized in that: Used to treat a photolithography mask plate to hydrogenate metallic pollutants, the photolithography mask plate has a titanium oxynitride catalyst layer, the titanium oxynitride catalyst layer is used to catalyze the cleaning treatment of photolithography pollutants, the photoresist forming the photolithography pollutants is a metal nanoparticle photoresist, the surface property of the titanium oxynitride catalyst layer is alkaline, and the photolithography pollutant treatment equipment includes: a box, a vacuum pump, a UV light source and a cleaning gas source; A vacuum chamber is formed in the box body, and the vacuum chamber is used to place the photolithography mask to be cleaned and provide a reaction space for the cleaning process; The vacuum pump is connected to the vacuum chamber, and the vacuum pump is used to evacuate the vacuum chamber; The cleaning gas source is connected to the vacuum chamber through a pipeline, and the cleaning gas source is used to introduce cleaning gas into the vacuum chamber, wherein the cleaning gas is an acidic oxygen-containing cleaning gas, and the oxygen-containing cleaning gas is a carbon dioxide cleaning gas; The UV light source is arranged in the vacuum chamber, and the UV light source is used to provide UV light. The UV light is used to irradiate the titanium oxynitride catalytic layer of the photolithography mask and stimulate the photocatalytic activity of the titanium oxynitride catalytic layer to make the acidic oxygen-containing cleaning gas produce active oxygen atoms, and the active oxygen atoms are used to react with the hydrogenated metallic pollutants to produce volatile gaseous compounds.

5. A photolithography machine, characterized in that: The photolithography machine comprises a vacuum chamber and a cleaning gas source. A photolithography mask is arranged in the vacuum chamber. The photolithography mask comprises a titanium oxynitride catalyst layer. The titanium oxynitride catalyst layer is used for catalyzing the cleaning of photolithography pollutants. The surface property of the titanium oxynitride catalyst layer is alkaline. The photoresist forming the photolithography pollutants is a metal nanoparticle photoresist. The photolithography pollutants are hydrogenated metallic pollutants. The cleaning gas source is used for releasing an oxygen-containing cleaning gas: carbon dioxide. The surface of the titanium oxynitride catalyst layer adsorbs carbon dioxide and interacts with the carbon dioxide. The vacuum chamber is provided with a UV light source, the UV light source is used to provide UV light, the UV light is used to irradiate the titanium oxynitride catalyst layer of the photolithography mask, and stimulate the photocatalytic activity of the titanium oxynitride catalyst layer, so that the acidic oxygen-containing cleaning gas generates active oxygen atoms, and the active oxygen atoms are used to react with the hydrogenated metallic pollutants to generate volatile gaseous compounds; The cleaning gas source is in communication with the vacuum chamber, and is used to introduce cleaning gas into the vacuum chamber.

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