A semiconductor laser thin film composite structure and preparation method thereof

Abstract

The present invention relates to a semiconductor laser thin film composite structure and a preparation method thereof. The semiconductor laser thin film composite structure includes: a substrate; a dielectric film, located on one side of the substrate; a metal film, located on the surface of the dielectric film on the side facing away from the substrate; and further includes a semi-disordered interface region, located between the substrate and the dielectric film; the order S of the semi-disordered interface region is between 0 and 1; the semi-disordered interface region is the interface region between the substrate and the dielectric film; the semi-disordered interface region is a mixed region formed by the constituent atoms of the substrate material and the constituent atoms of the dielectric film material. The semiconductor laser thin film composite structure provided by the present invention can improve the bonding strength between the dielectric film and the semiconductor laser substrate without changing the composition and thickness of the dielectric film, effectively prevent the semiconductor laser film from falling off easily, thereby improving the yield of the semiconductor laser, and at the same time ensuring the optical and electrical properties of the semiconductor laser.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor laser thin film composite structures, and in particular to a semiconductor laser thin film composite structure and a preparation method thereof. Background Art

[0002] In the thin film process of III-V semiconductor lasers, silicon oxide and silicon nitride dielectric film processes are indispensable. On the one hand, the dielectric film can block carrier transport and prevent carriers from being injected from the metal film into the non-luminescent area of ​​the semiconductor laser wafer. On the other hand, the dielectric film can adjust the refractive index of the laser emission light source, thereby improving the optoelectronic performance of the device.

[0003] For silicon oxide and silicon nitride dielectric films, they have an amorphous structure and have no crystallographic orientation relationship with the single crystal structure of the III-V compound substrate. Therefore, the dielectric film and the substrate are only physically adsorbed, and the interface bonding strength between the two is low. Correspondingly, the debonding between the dielectric film and the substrate is the main cause of the semiconductor laser film falling off. This film removal anomaly greatly reduces the yield of the semiconductor laser. The existing improvement method is to change the structure and composition of the dielectric film to improve the bonding strength with the substrate. This solution will reduce the dielectric and optical properties of the dielectric film, thereby affecting the electrical and optical properties of the semiconductor laser.

[0004] Therefore, a solution is needed to improve the bonding strength between the dielectric film and the semiconductor laser substrate without changing the composition and thickness of the dielectric film, so as to overcome the defect of low yield of existing semiconductor lasers. Summary of the invention

[0005] Therefore, the present invention provides a semiconductor laser thin film composite structure and a preparation method thereof to solve the problem in the prior art that the interface bonding strength between the dielectric film and the semiconductor laser substrate is low, which makes the semiconductor laser thin film easy to fall off, thereby resulting in a low yield of the semiconductor laser.

[0006] The present invention provides a semiconductor laser thin film composite structure, comprising:

[0007] substrate;

[0008] a dielectric film, located on one side of the substrate;

[0009] The metal film is located on the surface of the dielectric film facing away from the substrate;

[0010] It also includes a semi-disordered interface region, located between the substrate and the dielectric film; the order S of the semi-disordered interface region is between 0 and 1; the semi-disordered interface region is the interface region between the substrate and the dielectric film; the semi-disordered interface region is a mixed region formed by the mixing of constituent atoms of the substrate material and constituent atoms of the dielectric film material.

[0011] Optionally, the amorphous formation mixing enthalpy of each constituent atom in the semi-disordered interface region is greater than 0;

[0012] The thickness of the semi-disordered interface region is 1nm~2nm;

[0013] The semi-disordered interface region is composed of multiple spaced or continuous nanoscale island structures.

[0014] Optionally, the semi-disordered interface region is composed of one or more constituent substrate atoms and one or more constituent dielectric film atoms.

[0015] Optionally, the bonding strength between the substrate and the dielectric film is 6MPa-20Mpa.

[0016] Optionally, the substrate is a Group IIIA-VA semiconductor compound substrate;

[0017] Group IIIA-VA semiconductor compounds include GaAs or InP;

[0018] The thickness of the substrate is 100 μm~150 μm.

[0019] Optionally, the dielectric film is a silicon oxide amorphous film or a silicon nitride amorphous film;

[0020] The thickness of the dielectric film is 100nm~500nm.

[0021] Optionally, the metal film includes a Ti polycrystalline film, a Pt polycrystalline film, and an Au polycrystalline film stacked in sequence from the dielectric film to the metal film;

[0022] The thickness of the Ti polycrystalline film is 50nm~100nm; the thickness of the Pt polycrystalline film is 100nm~200nm; the thickness of the Au polycrystalline film is 100nm~200nm.

[0023] The present invention also provides a method for manufacturing a semiconductor laser thin film composite structure, comprising the following steps:

[0024] providing a substrate;

[0025] A semi-disordered interface region is formed on the surface of one side of the substrate; the order degree S of the semi-disordered interface region is between 0 and 1; the semi-disordered interface region is the interface region between the substrate and the dielectric film; the semi-disordered interface region is a mixed region formed by the mixing of constituent atoms of the substrate material and constituent atoms of the dielectric film material;

[0026] forming a dielectric film on a side of the semi-disordered interface region facing away from the substrate;

[0027] A metal film is deposited on the surface of the dielectric film facing away from the substrate.

[0028] Optionally, in the step of forming the semi-disordered interface region, the forming process includes a first magnetron sputtering process;

[0029] In the step of forming the dielectric film, the forming process includes a second magnetron sputtering process;

[0030] In the step of forming the metal film, the forming process includes a third magnetron sputtering process.

[0031] Optionally, the target material used in the first magnetron sputtering process is formed by splicing a single target material or a compound target material corresponding to the atoms constituting the substrate and a single target material or a compound target material corresponding to the atoms constituting the dielectric film.

[0032] The sputtering time of the first magnetron sputtering process is 10s~40s;

[0033] The thickness of the semi-disordered interface region is 1nm~2nm;

[0034] A first magnetron sputtering process is performed in a first sputtering chamber;

[0035] The second magnetron sputtering process and the third magnetron sputtering process are performed in the second sputtering chamber.

[0036] The technical solution of the present invention has the following advantages:

[0037] (1) The semi-disordered interface region in the semiconductor laser thin film composite structure provided by the present invention is formed by the constituent atoms of the substrate material and the constituent atoms of the dielectric film material, and its order is 0~1, which is between the single crystal structure (order is 1) and the amorphous structure (order is 0), and the semi-disordered interface region is a metastable structure. First, since the structure and composition of the semi-disordered interface region are between the substrate and the dielectric film, the semi-disordered interface region can make the structure and composition of the substrate material and the dielectric film material smoothly transition, so that the properties of the substrate material and the dielectric film material are smoothly transitioned, which can effectively inhibit the dielectric film from falling off due to the mismatch between the properties and the substrate, thereby improving the yield of the semiconductor laser. Secondly, the semi-disordered interface region can make the substrate-dielectric film interface rough, which can effectively buffer the performance difference between the substrate with a single crystal structure and the dielectric film with an amorphous structure, thereby effectively preventing the dielectric film from falling off, thereby improving the yield of the semiconductor laser. Finally, in the process of improving the bonding strength between the film and the substrate through interface engineering, the thickness, structure and composition of the dielectric film are not changed, and the dielectric and optical properties of the dielectric film are not affected, thus ensuring the optical and electrical properties of the semiconductor laser.

[0038] (2) The semi-disordered interface region in the semiconductor laser thin film composite structure provided by the present invention is a nano-island structure, which is composed of a plurality of nano-islands protruding from the substrate into the dielectric film, so that the substrate-dielectric film interface morphology is transformed from a nanoscale straight shape to a sawtooth shape, thereby increasing the shear strength within the substrate-dielectric film interface surface and the tensile strength outside the surface, improving the bonding strength between the dielectric film and the substrate, and can effectively prevent the semiconductor laser film from falling off, thereby improving the yield of the semiconductor laser.

[0039] The semiconductor laser thin film composite structure preparation method provided by the present invention can prepare the semiconductor laser thin film composite structure provided by the present invention. The semi-disordered interface region in the semiconductor laser thin film composite structure provided by the present invention is formed by the constituent atoms of the substrate material and the constituent atoms of the dielectric film material, and its order is 0~1, between the single crystal structure (order is 1) and the amorphous structure (order is 0), and the semi-disordered interface region is a metastable structure. First, since the structure and composition of the semi-disordered interface region are between the substrate and the dielectric film, the semi-disordered interface region can make the structure and composition of the substrate material and the dielectric film material smoothly transition, so that the properties of the substrate material and the dielectric film material are smoothly transitioned, which can effectively inhibit the dielectric film from falling off due to the mismatch between the properties and the substrate, thereby improving the yield of the semiconductor laser. Secondly, the semi-disordered interface region can make the substrate-dielectric film interface rough, which can effectively buffer the performance difference between the substrate of the single crystal structure and the dielectric film of the amorphous structure, thereby effectively preventing the dielectric film from falling off, thereby improving the yield of the semiconductor laser. Finally, in the process of improving the bonding strength between the film and the substrate through interface engineering, the thickness, structure and composition of the dielectric film are not changed, and the dielectric and optical properties of the dielectric film are not affected, thus ensuring the optical and electrical properties of the semiconductor laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0041] Figure 1 A schematic structural diagram of a semiconductor laser thin film composite structure according to an embodiment of the present invention;

[0042] Figure 2 A microscopic image of a semiconductor laser thin film composite structure according to an embodiment of the present invention;

[0043] Figure 3A microscopic image of a semi-disordered interface in a semiconductor laser thin film composite structure according to an embodiment of the present invention;

[0044] Figure 4 A schematic diagram of a process for preparing a semiconductor laser thin film composite structure according to an embodiment of the present invention;

[0045] Description of reference numerals:

[0046] 1-substrate; 2-dielectric film; 3-metal film; 4-semi-disordered interface region. DETAILED DESCRIPTION

[0047] In order to solve the problem in the prior art that the interface bonding strength between the dielectric film and the semiconductor laser substrate is low, which makes the semiconductor laser film easy to fall off and further leads to a low yield of the semiconductor laser, the present invention provides a semiconductor laser thin film composite structure, comprising: a substrate; a dielectric film, located on one side of the substrate; a metal film, located on the surface of the dielectric film on the side facing away from the substrate; and further comprising a semi-disordered interface region, located between the substrate and the dielectric film; the order degree S of the semi-disordered interface region is between 0 and 1; the semi-disordered interface region is the interface region of the substrate and the dielectric film; the semi-disordered interface region is a mixed region formed by constituent atoms of the substrate material and constituent atoms of the dielectric film material.

[0048] The present invention also provides a method for manufacturing a semiconductor laser thin film composite structure, comprising the following steps: providing a substrate; forming a semi-disordered interface region on the surface of one side of the substrate; the order S of the semi-disordered interface region is between 0 and 1; the semi-disordered interface region is the interface region of the substrate and the dielectric film; the semi-disordered interface region is a mixed region formed by the constituent atoms of the substrate material and the constituent atoms of the dielectric film material; forming a dielectric film on the side of the semi-disordered interface region facing away from the substrate; and depositing a metal film on the surface of the dielectric film facing away from the substrate.

[0049] The technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. In the description of the present invention, it should be noted that the terms "first", "second" and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0050] Example 1

[0051] refer to Figure 1 This embodiment provides a semiconductor laser thin film composite structure, including:

[0052] Substrate 1;

[0053] A dielectric film 2, located on one side of the substrate;

[0054] The metal film 3 is located on the surface of the dielectric film facing away from the substrate;

[0055] It also includes a semi-disordered interface region 4, located between the substrate and the dielectric film; the order S of the semi-disordered interface region is between 0 and 1; the semi-disordered interface region is the interface region between the substrate and the dielectric film; the semi-disordered interface region is formed by the mixing of constituent atoms of the substrate material and constituent atoms of the dielectric film material.

[0056] In specific implementation, the semi-disordered interface region is an atomic mixing region formed by co-sputtering the target material corresponding to the atoms of the substrate material and the target material corresponding to the atoms of the dielectric film material. In the film formation process of co-sputtering of multiple targets, atoms of different target materials form an amorphous structure due to the extremely high cooling rate. In addition, since the sputtering formation process of the semi-disordered interface region is extremely short (10s to 40s), the region formed by the above-mentioned co-sputtering does not have a complete layered morphology due to the island growth mechanism of the film. The semi-disordered interface region is the interface region between the substrate and the dielectric film. At the same time, the semi-disordered interface region presents an order between the crystal structure and the amorphous structure, that is, the order S of the semi-disordered interface region is between 0 and 1, and the semi-disordered interface region is a metastable structure, so it is defined as a semi-disordered interface region.

[0057] The semi-disordered interface region in the semiconductor laser thin film composite structure provided in this embodiment is formed by the constituent atoms of the substrate material and the constituent atoms of the dielectric film material, and its order is 0~1, which is between the single crystal structure (order is 1) and the amorphous structure (order is 0), and the semi-disordered interface region is a metastable structure. First, since the structure and composition of the semi-disordered interface region are between the substrate and the dielectric film, the semi-disordered interface region can make the structure and composition of the substrate material and the dielectric film material smoothly transition, so that the properties of the substrate material and the dielectric film material are smoothly transitioned, which can effectively inhibit the dielectric film from falling off due to the mismatch between the properties and the substrate, thereby improving the yield of the semiconductor laser. Secondly, the semi-disordered interface region can make the substrate-dielectric film interface rough, which can effectively buffer the performance difference between the substrate of the single crystal structure and the dielectric film of the amorphous structure, thereby effectively preventing the dielectric film from falling off, thereby improving the yield of the semiconductor laser. Finally, in the process of improving the bonding strength between the film and the substrate through interface engineering, the thickness, structure and composition of the dielectric film are not changed, and the dielectric properties and optical properties of the dielectric film are not affected, which can ensure the optical properties and electrical properties of the semiconductor laser.

[0058] Furthermore, in this embodiment, the amorphous formation mixing enthalpy of each constituent atom in the semi-disordered interface region is greater than 0; the thickness of the semi-disordered interface region is 1nm~2nm; and the semi-disordered interface region is a plurality of spaced or continuous nanoscale island structures.

[0059] Figure 2-Figure 3 This is a microscopic image of a semi-disordered interface region. During the co-sputtering process, the amorphous formation enthalpy of each constituent atom in the semi-disordered interface region is greater than 0. After formation, it will spontaneously begin to crystallize, but it is not completely crystallized due to the lack of subsequent energy support. The semi-disordered interface region is a plurality of spaced or continuous nanoscale island structures, rather than a layered morphology. The semi-disordered interface region is composed of a plurality of nano-islands protruding from the substrate into the dielectric film. The lattice contrast of these nano-islands is between the single crystal substrate below and the amorphous dielectric film above, that is, the order of these nano-islands is between that of crystals and amorphous, and the entire interface is a semi-disordered interface region.

[0060] The thickness of the semi-disordered interface region is 1nm~2nm, which has very little effect on the thickness of the entire composite structure. In addition, its composition is partially the same as that of the substrate and the dielectric film, and will not affect the thickness, structure and composition of the dielectric film, nor the dielectric and optical properties of the dielectric film, thereby ensuring the optical and electrical properties of the semiconductor laser.

[0061] In this embodiment, the semi-disordered interface region is a plurality of spaced or continuous nanoscale island structures, which are composed of a plurality of nano-islands protruding from the substrate into the dielectric film, so that the substrate-dielectric film interface morphology is transformed from a nanoscale straight shape to a sawtooth shape, thereby increasing the shear strength within the substrate-dielectric film interface surface and the tensile strength outside the surface, improving the bonding strength between the dielectric film and the substrate, and can effectively prevent the semiconductor laser film from falling off, thereby improving the yield of the semiconductor laser.

[0062] Furthermore, in this embodiment, the semi-disordered interface region is composed of one or more atoms constituting the substrate and one or more atoms constituting the dielectric film. Since the structure and composition are between the substrate and the dielectric film, the semi-disordered interface region can make the structure and composition of the substrate material and the dielectric film material smoothly transition, thereby making the properties of the substrate material and the dielectric film material smoothly transition, which can effectively inhibit the dielectric film from falling off due to the mismatch between the properties and the substrate, thereby improving the yield of the semiconductor laser.

[0063] In some embodiments, the semi-disordered interface region is formed by magnetron sputtering a single target material corresponding to atoms constituting the substrate and a single target material corresponding to atoms constituting the dielectric film.

[0064] Specifically, in one example, the substrate is GaAs, the dielectric film is an amorphous silicon oxide film, and the semi-disordered interface region is formed by magnetron sputtering of a Ga target and a Si target.

[0065] In other embodiments, the semi-disordered interface region is formed by magnetron sputtering a compound target material corresponding to the atoms constituting the substrate and a compound target material corresponding to the atoms constituting the substrate.

[0066] Specifically, in one example, the substrate is GaAs, the dielectric film is an amorphous silicon oxide film, and the semi-disordered interface region is formed by magnetron sputtering of a GaAs target and a SiO2 target.

[0067] Furthermore, in this embodiment, the bonding strength between the substrate and the dielectric film is 6 MPa-20 MPa.

[0068] In the prior art, the bonding strength between the substrate and the dielectric film is 3MPa-6MPa. In this embodiment, by introducing a semi-disordered interface region, the bonding strength between the substrate and the dielectric film can reach 6MPa-20Mpa. Without changing the thickness, structure and composition of the dielectric film, the bonding strength between the dielectric film and the substrate is greatly improved, which can effectively prevent the film peeling problem of the semiconductor laser, thereby improving the yield of the semiconductor laser.

[0069] Further, in this embodiment, the substrate is a IIIA-VA semiconductor compound substrate;

[0070] Group IIIA-VA semiconductor compounds include GaAs or InP;

[0071] The thickness of the substrate is 100 μm to 150 μm, for example, 100 μm, 110 μm, 120 μm, 130 μm, or 150 μm.

[0072] Further, in this embodiment, the dielectric film is a silicon oxide amorphous film or a silicon nitride amorphous film;

[0073] The thickness of the dielectric film is 100 nm to 500 nm, for example, 100 nm, 250 nm, 300 nm, 400 nm, and 500 nm.

[0074] Furthermore, in this embodiment, the metal film includes a Ti polycrystalline film, a Pt polycrystalline film, and an Au polycrystalline film stacked in sequence from the dielectric film to the metal film;

[0075] The thickness of the Ti polycrystalline film is 50nm~100nm, for example, 50nm, 60nm, 85nm, 90nm, 100nm; the thickness of the Pt polycrystalline film is 100nm~200nm, for example, 100nm, 140nm, 165nm, 180nm, 200nm; the thickness of the Au polycrystalline film is 100nm~200nm, for example, 100nm, 130nm, 150nm, 170nm, 200nm.

[0076] Example 2

[0077] refer to Figure 4 The present invention also provides a method for manufacturing a semiconductor laser thin film composite structure, which is used to manufacture the semiconductor laser thin film composite structure of the above-mentioned embodiment 1. The method comprises the following steps:

[0078] S201, providing a substrate;

[0079] S202, forming a semi-disordered interface region on the surface of one side of the substrate; the order degree S of the semi-disordered interface region is between 0 and 1; the semi-disordered interface region is the interface region between the substrate and the dielectric film; the semi-disordered interface region is a mixed region formed by the constituent atoms of the substrate material and the constituent atoms of the dielectric film material;

[0080] S203, forming a dielectric film on a side of the semi-disordered interface region facing away from the substrate;

[0081] S204, depositing a metal film on the surface of the dielectric film facing away from the substrate.

[0082] The semiconductor laser thin film composite structure preparation method provided in this embodiment can prepare the semiconductor laser thin film composite structure provided by the present invention. The semi-disordered interface region in the semiconductor laser thin film composite structure provided by the present invention is formed by the constituent atoms of the substrate material and the constituent atoms of the dielectric film material, and its order is 0~1, between the single crystal structure (order is 1) and the amorphous structure (order is 0), and the semi-disordered interface region is a metastable structure. First, since the structure and composition of the semi-disordered interface region are between the substrate and the dielectric film, the semi-disordered interface region can make the structure and composition of the substrate material and the dielectric film material smoothly transition, so that the properties of the substrate material and the dielectric film material are smoothly transitioned, which can effectively inhibit the dielectric film from falling off due to the mismatch between the properties and the substrate, thereby improving the yield of the semiconductor laser. Secondly, the semi-disordered interface region can make the substrate-dielectric film interface rough, which can effectively buffer the performance difference between the substrate of the single crystal structure and the dielectric film of the amorphous structure, thereby effectively preventing the dielectric film from falling off, thereby improving the yield of the semiconductor laser. Finally, in the process of improving the bonding strength by introducing a semi-disordered interface region, the thickness, structure and composition of the dielectric film are not changed, and the dielectric and optical properties of the dielectric film are not affected, thereby ensuring the optical and electrical properties of the semiconductor laser.

[0083] Further, in some embodiments, in the step of forming a semi-disordered interface region, the formation process includes a first magnetron sputtering process; in the step of forming a dielectric film, the formation process includes a second magnetron sputtering process; in the step of forming a metal film, the formation process includes a third magnetron sputtering process.

[0084] In one example, the second magnetron sputtering process is achieved by reactive sputtering of Si target in an atmosphere of O2 and N2, and the sputtering time of the second magnetron sputtering process is set according to the required thickness of the dielectric film, such as 5 minutes, 10 minutes, etc. The third magnetron sputtering process is achieved by conventional sputtering of Ti, Pt and Au target in an atmosphere of Ar, and the sputtering time of the third magnetron sputtering process is set according to the required thickness of each metal layer, such as 3 minutes, 6 minutes, 8 minutes, 10 minutes, etc. In another example, the second magnetron sputtering process is achieved by conventional sputtering of SiO2 target.

[0085] In particular, the parameters of the second magnetron sputtering process and the parameters of the third magnetron sputtering process have no effect on the semi-disordered interface region formed in the first magnetron sputtering process. The process parameters of the second magnetron sputtering process and the third magnetron sputtering process can be set according to actual needs, and this embodiment does not limit this.

[0086] Furthermore, in some embodiments, the target material used in the first magnetron sputtering process is composed of a single substance or compound target material corresponding to the atoms constituting the substrate and a single substance or compound target material corresponding to the atoms constituting the dielectric film.

[0087] The sputtering time of the first magnetron sputtering process is 10s~40s;

[0088] The thickness of the semi-disordered interface region is 1nm~2nm;

[0089] A first magnetron sputtering process is performed in a first sputtering chamber;

[0090] The second magnetron sputtering process and the third magnetron sputtering process are performed in the second sputtering chamber.

[0091] In a specific implementation, in order to avoid contamination of other target materials / chambers by atoms constituting the substrate, the first magnetron sputtering process is performed in an independent first sputtering chamber.

[0092] By controlling the target material of the first magnetron sputtering process to be a single target material or a compound target material corresponding to the atoms constituting the substrate and a single target material or a compound target material corresponding to the atoms constituting the dielectric film, the structure and composition of the semi-disordered interface region are between the substrate and the dielectric film, thereby making the structure and composition of the substrate material and the dielectric film material transition smoothly, and further making the properties of the substrate material and the dielectric film material transition smoothly, which can effectively suppress the shedding of the dielectric film due to the mismatch between the properties and the substrate, thereby improving the yield of the semiconductor laser.

[0093] By controlling the sputtering time of the first magnetron sputtering process to 10s~40s, a semi-disordered interface region can be quickly formed in a short time, and the thickness of the semi-disordered interface region is controlled to be 1nm~2nm, so that the thickness of the semi-disordered interface region has a very low effect on the thickness of the entire composite structure. In addition, the composition of the semi-disordered interface region is partially the same as that of the substrate and the dielectric film, so it will not affect the thickness, structure and composition of the dielectric film, nor the dielectric properties and optical properties of the dielectric film, and the optical and electrical properties of the semiconductor laser can be guaranteed.

[0094] Furthermore, in order to verify the difference between the bonding strength between the dielectric film and the substrate after the semi-disordered interface region is introduced in the present invention and the prior art, three groups of experiments are provided to prepare semiconductor laser thin film composite structures:

[0095] Comparative example: The preparation process of the semiconductor film using the existing technology is as follows:

[0096] (1) Prepare and clean the GaAs substrate.

[0097] (2) A silicon oxide dielectric film is grown on the substrate by sputtering a SiO2 target using a magnetron sputtering system. The sputtering time is set to 5 minutes. The target power supply uses a radio frequency power supply. The thickness of the silicon oxide dielectric film is 100 nm.

[0098] (3) A magnetron sputtering system is used to sputter Ti, Pt, and Au targets in sequence to form Ti, Pt, and Au metal films in sequence on the structure obtained in step (2). The sputtering times are set to 6 mins, 10 mins, and 8 mins, respectively. The thicknesses of the Ti, Pt, and Au metal films are 50 nm, 100 nm, and 100 nm, respectively.

[0099] The above-mentioned thin film preparation process is continuous, and each stage is controlled and adjusted by a program set by the sputtering machine.

[0100] The semiconductor film prepared above was decomposed into small square pieces with a side length of 5 mm, and the back of the substrate was fixed on the stage with strong glue, and then the strength of the film and substrate debonding was measured with a spring dynamometer in the direction perpendicular to the film surface. By recording the tension of the spring dynamometer when the film was debonded, the bonding strength between the film and the substrate can be measured to be 3MPa to 6MPa.

[0101] Experimental Example 1: The semiconductor film with high substrate bonding strength in Example 1 was prepared, and the preparation process was as follows:

[0102] (1) Prepare and clean the GaAs substrate.

[0103] (2) A magnetron sputtering system was used to co-sputter GaAs / SiO2 composite spliced ​​targets to form a semi-disordered interface region on the substrate surface. The sputtering time was set to 15 s, the target power supply used an RF power supply, and the width of the interface region was 2 nm.

[0104] (3) A silicon oxide dielectric film is formed on the structure obtained in step (2) by sputtering a SiO2 target using a magnetron sputtering system. The sputtering time is set to 5 minutes. The target power source uses a radio frequency power source. The thickness of the silicon oxide dielectric film is 100 nm.

[0105] (4) A magnetron sputtering system is used to sputter Ti, Pt, and Au targets in sequence to form Ti, Pt, and Au metal films in sequence on the structure obtained in step (3). The sputtering times are set to 6 mins, 10 mins, and 8 mins, respectively. The thicknesses of the Ti, Pt, and Au metal films are 50 nm, 100 nm, and 100 nm, respectively.

[0106] The above-mentioned thin film preparation process is continuous, and each stage is controlled and adjusted by a program set by the sputtering machine.

[0107] The semiconductor film prepared above was decomposed into small square pieces with a side length of 5 mm, and the back of the substrate was fixed on the stage with strong glue, and then the strength of the film and substrate debonding was measured with a spring dynamometer in the direction perpendicular to the film surface. By recording the tension of the spring dynamometer when the film was debonded, the bonding strength between the film and the substrate can be measured to be 9MPa to 12MPa.

[0108] Compared with the comparative example, the bonding strength between the film and the substrate in Experimental Example 1 is improved by 50% to 400%. Since the film components and layer thicknesses of Experimental Example 1 and the comparative example are the same, it can be seen that the improvement in the bonding strength between the film and the substrate is related to the film-substrate interface. The semi-disordered interface makes the film-substrate interface rough by regulating the morphology, structure and composition of the film-substrate interface, thereby improving the bonding strength between the film and the substrate and preventing the film from debonding from the substrate. At the same time, the semi-disordered interface introduced in Example 1 does not change the thickness, structure and composition of the dielectric film while improving the bonding strength between the film and the substrate. In other words, the semi-disordered interface constructed by interface engineering will not affect the dielectric properties and optical properties of the dielectric film, which is something that cannot be achieved by the existing technical solution of improving the bonding strength by changing the film structure and composition.

[0109] Experimental Example 2: The semiconductor film with high substrate bonding strength in Example 1 was prepared, and the preparation process was as follows:

[0110] (1) Prepare and clean the GaAs substrate.

[0111] (2) A magnetron sputtering system was used to co-sputter Ga / Si composite targets in an Ar and O2 atmosphere to form a semi-disordered interface region on the substrate surface. The sputtering time was set to 30 s, the target power supply used an RF power supply, and the width of the interface region was 2 nm.

[0112] (3) A silicon oxide dielectric film is formed on the structure obtained in step (2) by sputtering a Si target in an atmosphere of Ar and O2 using a magnetron sputtering system. The sputtering time is set to 8 minutes. The target power supply uses a radio frequency power supply. The thickness of the silicon oxide dielectric film is 100 nm.

[0113] (4) A magnetron sputtering system is used to sputter Ti, Pt, and Au targets in sequence to form Ti, Pt, and Au metal films in sequence on the structure obtained in step (3). The sputtering times are set to 6 mins, 10 mins, and 8 mins, respectively. The thicknesses of the Ti, Pt, and Au metal films are 50 nm, 100 nm, and 100 nm, respectively.

[0114] The above-mentioned thin film preparation process is continuous, and each stage is controlled and adjusted by a program set by the sputtering machine.

[0115] The semiconductor film prepared above was decomposed into small square pieces with a side length of 5 mm, and the back of the substrate was fixed on the stage with strong glue, and then the strength of the film and substrate debonding was measured with a spring tensile gauge in the direction perpendicular to the film surface. The tension of the spring tensile gauge when the film was debonded was recorded, and the bonding strength between the film and the substrate was measured to be 8MPa to 12MPa.

[0116] Compared with the comparative example, the bonding strength between the film and the substrate in Experimental Example 2 is improved by 33% to 200%. Since the film components and layer thicknesses of Experimental Example 2 and the comparative example are the same, it can be seen that the improvement in the bonding strength between the film and the substrate is related to the film-substrate interface. The semi-disordered interface makes the film-substrate interface rough by regulating the morphology, structure and composition of the film-substrate interface, thereby improving the bonding strength between the film and the substrate and preventing the film from debonding from the substrate. At the same time, the semi-disordered interface introduced in Example 2 does not change the thickness, structure and composition of the dielectric film while improving the bonding strength between the film and the substrate. In other words, the semi-disordered interface constructed by interface engineering will not affect the dielectric properties and optical properties of the dielectric film, which is something that cannot be achieved by the existing technical solutions for improving the bonding strength by changing the film structure and composition.

[0117] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. A semiconductor laser thin film composite structure, characterized in that: include: Substrate; the substrate is a IIIA-VA semiconductor compound single crystal substrate; A dielectric film, located on one side of the substrate; The dielectric film is a silicon oxide amorphous film or a silicon nitride amorphous film; A metal film is located on a surface of the dielectric film facing away from the substrate; It also includes a semi-disordered interface region, located between the substrate and the dielectric film; the order S of the semi-disordered interface region is between 0 and 1; the semi-disordered interface region is the interface region of the substrate and the dielectric film; the semi-disordered interface region is a mixed region formed by the constituent atoms of the substrate material and the constituent atoms of the dielectric film material.

2. The semiconductor laser thin film composite structure according to claim 1, characterized in that: The amorphous formation mixing enthalpy of each constituent atom in the semi-disordered interface region is greater than 0; The thickness of the semi-disordered interface region is 1 nm to 2 nm; The semi-disordered interface region is a plurality of spaced or continuous nano-scale island structures.

3. The semiconductor laser thin film composite structure according to claim 2, characterized in that: The semi-disordered interface region is composed of one or more atoms constituting the substrate and one or more atoms constituting the dielectric film.

4. The semiconductor laser thin film composite structure according to claim 3, characterized in that: The bonding strength between the substrate and the dielectric film is 6MPa-20MPa.

5. The semiconductor laser thin film composite structure according to claim 4, characterized in that: The IIIA-VA semiconductor compound includes GaAs or InP; The thickness of the substrate is 100 μm-150 μm.

6. The semiconductor laser thin film composite structure according to claim 5, characterized in that: The thickness of the dielectric film is 100nm~500nm.

7. The semiconductor laser thin film composite structure according to claim 6, characterized in that: The metal film includes a Ti polycrystalline film, a Pt polycrystalline film, and an Au polycrystalline film which are sequentially stacked from the dielectric film to the metal film; The thickness of the Ti polycrystalline film is 50nm-100nm; the thickness of the Pt polycrystalline film is 100nm-200nm; the thickness of the Au polycrystalline film is 100nm-200nm.

8. A method for preparing a semiconductor laser thin film composite structure, characterized in that: The following steps are involved: Providing a substrate; the substrate is a IIIA-VA semiconductor compound single crystal substrate; A semi-disordered interface region is formed on the surface of one side of the substrate; the order degree S of the semi-disordered interface region is between 0 and 1; the semi-disordered interface region is the interface region of the substrate and the dielectric film; the semi-disordered interface region is a mixed region formed by the constituent atoms of the substrate material and the constituent atoms of the dielectric film material; A dielectric film is formed on the side of the semi-disordered interface region facing away from the substrate; the dielectric film is an amorphous silicon oxide film or an amorphous silicon nitride film; A metal film is deposited on the surface of the dielectric film which is opposite to the substrate.

9. The method for preparing a semiconductor laser thin film composite structure according to claim 8, characterized in that: In the step of forming the semi-disordered interface region, the forming process includes a first magnetron sputtering process; In the step of forming the dielectric film, the forming process includes a second magnetron sputtering process; In the step of depositing a metal film on the surface of the dielectric film facing away from the substrate, the forming process includes a third magnetron sputtering process.

10. The method for preparing a semiconductor laser thin film composite structure according to claim 9, characterized in that: The target material of the first magnetron sputtering process is formed by splicing a single target material or a compound target material corresponding to the atoms constituting the substrate and a single target material or a compound target material corresponding to the atoms constituting the dielectric film; The sputtering time of the first magnetron sputtering process is 10s~40s; The thickness of the semi-disordered interface region is 1 nm to 2 nm; The first magnetron sputtering process is performed in a first sputtering chamber; The second magnetron sputtering process and the third magnetron sputtering process are performed in the second sputtering chamber.

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