A schottky diode assembly, design method, frequency multiplier and regulation method

Abstract

The application discloses a Schottky diode assembly, a design method, a frequency multiplier and an adjusting method, relates to the technical field of semiconductor devices, and solves the problem that the prior art cannot keep the power consistency between diodes when the number of diodes increases; the application comprises m rows of n columns of diodes, and an open ring is arranged between diodes in different rows, the open ring surrounds one row of diodes, n is greater than or equal to 1, and m is greater than or equal to 2, and the diodes are Schottky diodes; the application can effectively solve the problem that, with the increase of the number of diodes, the inconsistency of the working states of the diodes is enhanced, and the power bearing capacity of the frequency multiplier and the frequency multiplication efficiency are reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor devices, in particular to a Schottky diode assembly, a design method, a frequency doubler and an adjusting method. BACKGROUND

[0002] Terahertz waves refer to electromagnetic waves with a frequency band of 0.1-10 THz and a wavelength of 0.03-3 mm. Due to its special position between millimeter waves and infrared light in the electromagnetic frequency band, terahertz waves have the characteristics of high information capacity, high resolution, good spatial and temporal coherence, and characteristic absorption of spectrum. These unique advantages make terahertz waves have great research value, and have great application prospects in the fields of communication, astronomy, security detection and radar remote sensing detection.

[0003] The commonly used solid-state source in the terahertz frequency band is a terahertz frequency doubling circuit. The frequency doubler uses a nonlinear element to generate harmonic components to obtain a high-frequency signal. The core indicators are output power and frequency doubling efficiency. When the diode parameters are determined, the frequency doubling efficiency of the frequency doubler tends to a certain level and is difficult to improve. In order to obtain greater output power of the frequency doubler, more diodes are usually used in the frequency doubler to increase the power that the frequency doubler can withstand.

[0004] The increase in the number of diodes in the frequency doubler increases the difference in the working state of the diodes at different positions on the substrate, making it difficult for impedance matching to make all diodes work in the best state, further leading to a decrease in the frequency doubling efficiency and output power of the frequency doubler. SUMMARY

[0005] In order to solve the problems existing in the prior art, the present application provides a Schottky diode assembly, a design method, a frequency doubler and an adjusting method, which solve the problem that the prior art cannot maintain the power consistency between diodes when the number of diodes increases.

[0006] A Schottky diode assembly includes m rows and n columns of diodes, and an open ring is provided between different rows of diodes, the open ring surrounds a row of diodes, n≥1, m≥2, and the diodes are Schottky diodes.

[0007] Further, the die areas of the diodes in the same column are the same.

[0008] Further, the die areas of the diodes in different columns are different.

[0009] Further, the open ring is in one or more of a U shape, a C shape and an I shape.

[0010] Further, the material of the diodes is one or more of GaN, GaAs, SiC, Si and InP.

[0011] A design method of a Schottky diode assembly, for designing a diode assembly, comprising: adjusting the arm length of the opening side of the opening ring to adjust the impedance of the diodes in the same column; to regulate the power size of the diodes in the same column, enhance the power consistency of the diodes in the same column, and improve the overall power bearing capacity.

[0012] Further, it also comprises: adjusting the die area ratio of diodes in different columns to adjust the impedance of diodes in different columns; to regulate the power size of diodes in different columns, enhance the power consistency of diodes in different columns.

[0013] A frequency multiplier, comprising an input waveguide, a terahertz frequency multiplier circuit and an output waveguide connected in sequence, the terahertz frequency multiplier circuit comprising a Schottky diode assembly designed by a design method of a Schottky diode assembly, the output end of the input waveguide being connected with the input end of the Schottky diode assembly. The assembly utilizes the nonlinear characteristics of the diode to convert the electromagnetic fundamental wave component into the second harmonic component, and at the same time converts the TE10 mode electromagnetic field working in the waveguide into the quasi-TEM mode electromagnetic field working in the suspended microstrip. By adjusting the input power consistency of the Schottky diode assembly, the power bearing capacity and output power of the overall Schottky diode assembly are improved, thereby solving the problem of the decline of the frequency multiplier's bearing power capacity and frequency multiplication efficiency.

[0014] The input waveguide is transformed in height by a standard waveguide port, and the input impedance matching of the frequency multiplier is realized by cascading waveguides of different levels and different heights.

[0015] The output waveguide is transformed from the output end of the terahertz frequency multiplier circuit to a standard waveguide port through cascading waveguides of different levels and different heights, realizing output matching.

[0016] Further, the terahertz frequency multiplier circuit further comprises an output matching circuit, a suspended microstrip-to-waveguide transition circuit and a low-pass filter connected in sequence, wherein the output end of the Schottky diode assembly is connected with the input end of the output matching circuit; the output matching circuit, the suspended microstrip-to-waveguide transition circuit and the low-pass filter realize the matching process from the second harmonic output by the Schottky diode assembly to the standard waveguide.

[0017] A method for adjusting the die power of diodes in a frequency multiplier, comprising:

[0018] Step 1: Simulate the circuit of the Schottky diode assembly in the frequency multiplier circuit to view the die power of each diode; generally, the diode die power at this time presents certain difference.

[0019] Step 2: For the diodes in the same column in the Schottky diode assembly, the open ring opening side arm length is modified to regulate the impedance of the diodes in the same column, so that the difference of the diode chip power in the same column is less than a target value;

[0020] Step 3: For the diodes in different columns in the Schottky diode assembly, the diode chip area in the same column is kept different, and then the diode chip area ratio of the diodes in different columns is modified, and then the diode chip power in different columns is simulated to check, and the difference of the diode chip power in different columns is modified to be less than a target value;

[0021] Step 4: The overall structure of the frequency doubler is optimized, if the design target is reached, the target frequency doubler is obtained, otherwise, the above steps are repeated.

[0022] The beneficial effects of the present application include:

[0023] The present application aims at the problem that with the increase of the number of diodes, the inconsistency of the working state of the diodes is enhanced, which leads to the decline of the power bearing capacity and the frequency doubling efficiency of the frequency doubler, and proposes a chip power regulation method based on multiple columns of diodes, which can effectively solve the above problems. Further, the power of the chip is modified in the two-dimensional plane, the consistency of the input power of the diodes in different columns is enhanced by modifying the diode chip area, the power bearing capacity of the frequency doubler is enhanced, and the output power of the frequency doubler is improved; by modifying the arm length of the U-shaped structure, the consistency of the input power of the diodes in the same column is enhanced, the power bearing capacity of the frequency doubler is enhanced, and the output power of the frequency doubler is improved. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 The structure diagram of the Schottky diode assembly in the frequency doubler related to the embodiment of the present application.

[0025] Figure 2 The flow chart of the frequency doubler regulation method related to the embodiment of the present application.

[0026] Figure 3 The overall circuit structure diagram of the frequency doubler related to the embodiment of the present application.

[0027] Figure 4 The frequency doubling efficiency simulation result diagram of the frequency doubler related to the embodiment of the present application.

[0028] REFERENCE NUMERALS

[0029] 1-standard WR-10 waveguide, 2-input matching waveguide, 3-Schottky diode assembly, 4-output matching circuit, 5-suspended microstrip to waveguide transition circuit, 6-low pass filter, 7-output matching waveguide, 8-standard WR-5 waveguide. DETAILED DESCRIPTION

[0030] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0031] A Schottky diode assembly includes m rows and n columns of diodes, with open rings between different rows of diodes, the open rings surrounding a row of diodes, n≥1, m≥2, and the diodes being Schottky diodes.

[0032] In this embodiment, the diodes in different columns are arranged vertically. The opening direction of the aperture ring is not fixed and is affected by the surrounding structure of the Schottky diode assembly. Typically, the opening direction is in the direction of increasing diode power.

[0033] Specifically, each row of diodes is arranged adjacent to each other, meaning that the distance between each row of diodes is less than or equal to one-quarter of a wavelength.

[0034] like Figure 1 As shown, the arched shape resembling the letter 'm' is the cathode of the diode, which is part of the diode. Diodes in different rows are connected to the intermediate metal structure via air bridges, and then connected to the diodes in the next row via air bridges. The air bridges can be considered part of the diodes. Diodes in each column may or may not be connected, depending on the spacing between diodes in different columns. Figure 1 In a diode array, diodes in different columns within the same row are connected at their cathodes.

[0035] The horizontal connectors at the top and bottom of the component are used for external connections. Their shapes are not fixed; here, it only indicates external connection.

[0036] In another embodiment, the diodes in the same column have the same die area.

[0037] In another embodiment, when n > 1, the die areas of diodes in different columns are different.

[0038] Specifically, in this embodiment, there are 2 columns of diodes, and the two columns are adjacent to each other.

[0039] In another embodiment, the shape of the opening ring is one or more of the following: U-shaped, C-shaped, and I-shaped.

[0040] Specifically, in this embodiment, the opening ring is a U-shaped metal structure.

[0041] In another embodiment, the material of the diode is one or more of GaN, GaAs, SiC, Si, InP.

[0042] In particular, in the embodiment, the diode is a monolithic integrated GaN diode.

[0043] A design method of a Schottky diode assembly, for designing a Schottky diode assembly, comprising: adjusting the arm length of the opening side of the opening ring to adjust the impedance of the same column of diodes; to regulate the power size of the diodes in the same column, enhance the power consistency of the diodes in the same column, and improve the overall power bearing capacity. If the opening ring is C-shaped, it can correspond to the circumference, and if it is H-shaped, it can correspond to the length of the two horizontal lines "one", that is, the degree of surrounding the diodes; the H-shaped structure is placed in the same way as the U-shaped structure, surrounding the diodes in the upper and lower rows, and regulating the upper and lower rows.

[0044] In particular, in the embodiment, the opening ring is a U-shaped metal structure, and the two arms of the U-shaped structure extend outward. The U-shaped structure will affect the impedance of the diodes contained by the U-shaped structure. By controlling the arm length of the U-shaped structure, the power obtained by the diodes is adjusted, thereby enhancing the consistency of the diodes and improving the overall power bearing capacity.

[0045] The specific regulation principle is that the opening ring will affect the energy input to the diodes by the electromagnetic field, and since the total energy is limited, adjusting the diodes surrounded by the opening ring will also change the energy absorbed by the diodes that are not surrounded.

[0046] In another embodiment, it also includes: adjusting the die area of diodes in different columns to adjust the impedance of diodes in different columns; to regulate the power size of diodes in different columns, enhance the power consistency of diodes in different columns.

[0047] In particular, in the embodiment, the Schottky diode assembly includes two adjacent columns of diodes. The die area of one column of diodes is denoted as A1, and the die area of the other column is denoted as A2. By modifying the ratio of A1 and A2, the impedance of different columns of diodes in parallel relationship is modified, the power obtained by different columns of diodes is modified, the power obtained by different columns of diodes is regulated, or the diodes with larger die area obtain more power, the consistency of different columns of diodes is enhanced, the overall frequency multiplier's bearing power is improved, and the frequency multiplication efficiency of the frequency multiplier is also increased.

[0048] A frequency doubler comprises an input waveguide, a terahertz frequency doubling circuit and an output waveguide connected in sequence, the terahertz frequency doubling circuit comprises a Schottky diode assembly designed by a design method of a Schottky diode assembly, and an output end of the input waveguide is connected with an input end of the Schottky diode assembly. The assembly utilizes the non-linear characteristics of the diode to convert electromagnetic fundamental wave components into second harmonic components, and at the same time, converts a TE10 mode electromagnetic field working in the waveguide into a quasi-TEM mode electromagnetic field working in the suspended microstrip. By adjusting the input power consistency of the Schottky diode assembly, the power bearing capacity and the output power of the overall Schottky diode assembly are improved, so as to solve the problems of the power bearing capacity and the frequency doubling efficiency of the frequency doubler. Specifically, the arm length of the open ring closer to the inner wall of the waveguide is longer, and overall, the arm length of the open ring presents a gradual change; the diode closer to the output port of the frequency doubler has a smaller tube core area.

[0049] Specifically, the embodiment relates to a single-balanced double frequency doubling scheme, and the diodes in the Schottky diode assembly are symmetrically distributed on both sides of the middle metal microstrip.

[0050] The input waveguide is subjected to height transformation by a standard waveguide port, and the input impedance matching of the frequency doubler is realized by cascading waveguides with different heights.

[0051] The output circuit realizes the output impedance matching of the diode and increases the second harmonic energy output.

[0052] In another embodiment, the terahertz frequency doubling circuit further comprises an output matching circuit, a suspended microstrip-to-waveguide transition circuit and a low-pass filter connected in sequence, wherein an output end of the Schottky diode assembly is connected with an input end of the output matching circuit; the output matching circuit, the suspended microstrip-to-waveguide transition circuit and the low-pass filter realize the matching process from the second harmonic output by the Schottky diode assembly to the standard waveguide.

[0053] The suspended microstrip-to-output waveguide transition converts the quasi-TEM mode of the suspended microstrip into the TE10 mode of the waveguide and outputs through the subsequent output matching waveguide and the standard waveguide port.

[0054] The low-pass filter is located at the end of the suspended microstrip-to-output waveguide transition and performs bias filtering to reduce the second harmonic energy leakage.

[0055] Specifically, the embodiment specifically relates to a double frequency doubler, such as Figure 3As shown in the figure, which includes a standard WR-10 waveguide 1, an input matching waveguide 2, i.e., an input waveguide, a terahertz frequency doubling circuit, an output matching waveguide 7, i.e., an output waveguide, a standard WR-5 waveguide 8; the terahertz frequency doubling circuit includes a Schottky diode assembly 3, an output matching circuit 4, a suspended microstrip-to-waveguide transition circuit 5, a low-pass filter 6, and the circuit substrate material can be any one of SiC, quartz, InP, GaAs, Si, which is not limited here. The split ring in the Schottky diode assembly is U-shaped.

[0056] The low-pass filter 6 is a CMRC filter, located at the end of the suspended microstrip-to-waveguide transition circuit 5, used to reduce the leakage of second harmonic energy and improve the frequency doubling efficiency.

[0057] A method for adjusting the die power of diodes in a frequency doubler, such as Figure 2 As shown in the figure, which includes:

[0058] Step 1: Simulate the circuit of the Schottky diode assembly in the frequency doubler circuit to view the die power of each diode therein. Generally, the diode die power at this time presents a certain difference.

[0059] Step 2: For the diodes in the same column of the Schottky diode assembly, modify the length of the open side arm of the split ring to control the impedance of the diodes in the same column, so that the difference in the die power of the diodes in the same column is less than a target value; the target value is determined according to the design target of the frequency doubler.

[0060] Step 3: For diodes in different columns of the Schottky diode assembly, keep the die area of diodes in the same column the same, and then modify the die area ratio of diodes in different columns, and then simulate to view the die power of diodes in different columns, and modify the difference in the die power of diodes in different columns to be less than a target value.

[0061] Step 4: Optimize the overall structure of the frequency doubler, including optimizing the parameters of the input waveguide, the frequency doubling circuit, and the output waveguide of the frequency doubler. If the output power and the frequency doubling efficiency of the frequency doubler reach the expected design target, the target frequency doubler is obtained, otherwise, repeat the above steps.

[0062] Specifically, the above-mentioned method is used to optimize the two-frequency doubler mentioned in the foregoing embodiments. The simulation results of the frequency doubling efficiency of the optimized target frequency doubler are shown in the figure Figure 4 As can be seen from the figure, the frequency doubling efficiency of the two-frequency doubler is high, and can have a frequency doubling efficiency of 16% to 18% in the range of 164GHz to 179GHz.

[0063] The above embodiments only express the specific implementation of the present application, which is described in more detail and specifically, but cannot be understood as a limitation to the protection scope of the present application. It should be noted that for those skilled in the art, without departing from the technical concept of the present application, a number of modifications and improvements can be made, which are all within the protection scope of the present application.

Claims

1. A design method for a Schottky diode assembly, characterized in that, The Schottky diode assembly includes m rows and n columns of diodes, with an open ring between different rows of diodes. The open ring surrounds a row of diodes, where m ≥ 2 and n ≥ 1. The diodes are Schottky diodes. The assembly includes adjusting the arm length of the open side of the open ring to adjust the impedance of the diodes in the same column.

2. The design method of a Schottky diode assembly according to claim 1, characterized in that, Diodes in the same column have the same die area.

3. The design method of a Schottky diode assembly according to claim 1, characterized in that, The die area of ​​diodes in different columns is different.

4. The design method of a Schottky diode assembly according to claim 1, characterized in that, The shape of the open ring is one or more of the following: U-shaped, C-shaped, and I-shaped.

5. The design method of a Schottky diode assembly according to claim 1, characterized in that, The diode is made of one or more of GaN, GaAs, SiC, Si, and InP.

6. The design method of a Schottky diode assembly according to claim 1, characterized in that, Also includes: Adjusting the die area ratio of diodes in different columns can adjust the impedance of diodes in different columns.

7. A frequency multiplier, characterized in that, It includes an input waveguide, a terahertz frequency multiplier circuit, and an output waveguide connected in sequence. The terahertz frequency multiplier circuit includes a Schottky diode assembly as described in any one of claims 1-4. The output terminal of the input waveguide is connected to the input terminal of the Schottky diode assembly.

8. A frequency multiplier according to claim 7, characterized in that, The terahertz frequency multiplier circuit also includes an output matching circuit, a suspended microstrip to a waveguide transition circuit, and a low-pass filter connected in sequence, wherein the output terminal of the Schottky diode assembly is connected to the input terminal of the output matching circuit.

9. A method for adjusting a frequency multiplier, characterized in that, For adjusting the frequency multiplier of claim 7, comprising: Step 1: Simulate the circuit of the Schottky diode assembly in the frequency multiplier circuit and check the die power of each diode; Step 2: For the diodes in the same column of the Schottky diode assembly, modify the length of the open side arm of the open ring to adjust the impedance of the diodes in the same column, so that the difference in the die power of the diodes in the same column is less than the target value. Step 3: For the diodes in different columns of the Schottky diode assembly, keep the die area of ​​the diodes in the same column the same, then modify the die area ratio of the diodes in different columns, and then simulate and check the die power of the diodes in different columns, and modify it until the difference in die power of the diodes in different columns is less than the target value. Step 4: Optimize the overall structure of the frequency multiplier. If the design goal is achieved, the target frequency multiplier is obtained; otherwise, repeat the above steps.

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