PWM pulse power supply and control method for wafer annealing process
Through the consistency module, the PWM pulse power and heating module are jointly corrected and monitored in real time to generate accurate control strategies to solve the problems of inconsistent power supply and heating modules in traditional technologies and inaccurate processing. And reliable control.
Patent Information
- Application Number
- CN202411588637.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-08
- Publication Date
- 2025-01-28
- Estimated Expiration
- 2044-11-08
Smart Images
Figure CN119093910B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductors, and in particular to a PWM pulse power supply and a control method for a wafer annealing process. Background Art
[0002] With the continuous development of semiconductor technology, wafer annealing process has become increasingly important in the semiconductor manufacturing process. Wafer annealing refers to the heat treatment of wafers in a high temperature environment to improve their electrical properties and physical structure. The temperature control accuracy and stability during the annealing process directly affect the quality and yield of the wafer. Traditional annealing processes usually use resistance heating or lamp heating. Although these methods are simple and easy to use, they are insufficient in accuracy and efficiency.
[0003] In recent years, PWM (Pulse Width Modulation) pulse power supplies have been widely used in wafer annealing processes. PWM pulse power supplies control the output power by adjusting the pulse width, thereby achieving precise control of the heating power of the heating module. However, PWM pulse power supplies face many problems in practical applications, such as consistency between the power supply and the heating module, precise control of annealing parameters, and timely detection and handling of abnormal situations.
[0004] Traditional PWM pulse power supply control methods usually only focus on the output control of the power supply, while ignoring the consistency between the power supply and the heating module. As a result, in the actual annealing process, the heating power of the heating module is often inconsistent with the output of the PWM pulse power supply, thus affecting the annealing effect. In addition, when dealing with abnormal situations, traditional control methods can usually only perform simple alarm and shutdown operations, and cannot accurately classify and handle abnormalities, thus affecting the stability and reliability of the equipment. Summary of the invention
[0005] The purpose of the present invention is to overcome the deficiencies of the prior art and provide a PWM pulse power supply control method for a wafer annealing process, comprising the following steps:
[0006] Step 1: The consistency module performs consistency joint correction on the PWM pulse power supply and the heating module to obtain a corrected heating power output strategy of the heating module;
[0007] Step 2: Obtain wafer annealing parameters, and the PWM pulse power supply control module generates a PWM pulse power supply module output strategy corresponding to the wafer annealing parameters according to the wafer annealing parameters;
[0008] Step three, according to the PWM pulse power module output strategy corresponding to the wafer annealing parameters and the heating module heating power output strategy, the PWM pulse power control strategy corresponding to the wafer annealing parameters is obtained, the PWM pulse power control module controls the output of the PWM pulse power according to the PWM pulse power control strategy, the heating control module controls the heating module to heat according to the real-time output information of the PWM pulse power, and sends the received output information of the PWM pulse power to the consistency module;
[0009] Step 4: The data acquisition module obtains the heating information of the heating module. The consistency module determines whether the real-time output of the PWM pulse power supply received by the heating control module and the heating power of the heating module are consistent. If they are consistent, the process proceeds to step 6; otherwise, the process proceeds to step 5.
[0010] Step 5: According to the real-time output of the PWM pulse power supply and the heating power of the heating module, the abnormality category is obtained, and the PWM pulse power supply and the heating module are processed according to the abnormality category. After the processing is completed;
[0011] Step six: Wafer annealing is completed until the PWM pulse power supply control strategy corresponding to the wafer annealing parameters is executed.
[0012] Furthermore, the consistency module performs a joint consistency correction on the PWM pulse power supply and the heating module to obtain a corrected heating power output strategy for the heating module, including:
[0013] The consistency module detects and eliminates faults of the PWM pulse power supply and the heating module. Through the wafer annealing test parameters, the output of the PWM pulse power supply and the heating data of the heating module corresponding to the PWM pulse power supply output are obtained. The output of the PWM pulse power supply and the heating data of the heating module corresponding to the PWM pulse power supply output constitute the heating power output strategy of the heating module.
[0014] Furthermore, the PWM pulse power control module generates a PWM pulse power module output strategy corresponding to the wafer annealing parameters according to the wafer annealing parameters, including:
[0015] The wafer annealing parameters include an annealing cycle and a heating power, and the annealing cycle includes a heating sub-cycle, a heat preservation sub-cycle and a cooling sub-cycle; according to the heating power in each sub-cycle of the heating sub-cycle, the heat preservation sub-cycle and the cooling sub-cycle, the PWM pulse power output of the corresponding sub-cycle is obtained in the standard heating module heating power output strategy, and the PWM pulse power output of the corresponding sub-cycle and the duration of the corresponding sub-cycle constitute a PWM pulse power module output strategy corresponding to the wafer annealing parameters.
[0016] Furthermore, the PWM pulse power supply control strategy corresponding to the wafer annealing parameters is obtained according to the PWM pulse power supply module output strategy corresponding to the wafer annealing parameters and the heating module heating power supply output strategy, including:
[0017] If the heating power corresponding to the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters is consistent with the heating power output strategy of the heating module, the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters will not be corrected;
[0018] If the heating power corresponding to the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters is inconsistent with that in the heating module heating power output strategy, the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters is replaced with the PWM pulse power module output corresponding to the same heating power in the heating module heating power output strategy; and the PWM pulse power control strategy corresponding to the wafer annealing parameters is obtained.
[0019] Furthermore, the data acquisition module obtains the heating information of the heating module, and the consistency module determines whether the real-time output of the PWM pulse power supply received by the heating control module and the heating power of the heating module are consistent, including:
[0020] According to the PWM pulse power supply control strategy corresponding to the wafer annealing parameters, if the real-time output of the PWM pulse power supply received by the heating control module is consistent with the heating power of the heating module, it is normal; otherwise, it is abnormal.
[0021] Furthermore, the abnormality category is obtained according to the real-time output of the PWM pulse power supply and the heating power of the heating module, and the abnormality processing of the PWM pulse power supply and the heating module is performed according to the abnormality category, including:
[0022] If the real-time output of the PWM pulse power supply and the heating power of the heating module do not conform to the control strategy of the corresponding sub-cycle in the PWM pulse power supply control strategy of the corresponding wafer annealing parameters, it is a Class I abnormality; otherwise, it is a Class II abnormality; if it is a Class I abnormality, an equipment fault alarm is issued and the equipment is stopped; if it is a Class II abnormality, the output of the PWM pulse power supply is adjusted so that the heating power of the heating module conforms to the heating power in the control strategy of the corresponding sub-cycle.
[0023] A PWM pulse power supply for a wafer annealing process, using the PWM pulse power supply control method for a wafer annealing process, comprising a PWM pulse power supply module, a PWM pulse power supply control module, a heating control module, a heating module, a data acquisition module, a consistency module and a data processing module;
[0024] The PWM pulse power supply control module, heating control module, data acquisition module and consistency module are respectively connected to the data processing module; the PWM pulse power supply module is connected to the PWM pulse power supply control module; and the heating module is connected to the heating control module.
[0025] The beneficial effects of the present invention are as follows: The present invention performs consistency joint correction on the PWM pulse power supply and the heating module through the consistency module to ensure that the heating power of the heating module is consistent with the output of the PWM pulse power supply. At the same time, the corresponding PWM pulse power supply control strategy is generated according to the wafer annealing parameters, and the heating information of the heating module is monitored in real time through the data acquisition module to achieve precise control of the annealing process. In abnormal situations, the method can accurately classify and process the abnormalities, thereby improving the stability and reliability of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Figure 1 It is a flow chart of a PWM pulse power supply control method for a wafer annealing process;
[0027] Figure 2 It is a schematic diagram of the principle of the PWM pulse power supply used in the wafer annealing process;
[0028] Figure 3 Schematic diagram of the heating module principle. DETAILED DESCRIPTION
[0029] The technical solution of the present invention is further described in detail below in conjunction with the accompanying drawings, but the protection scope of the present invention is not limited to the following.
[0030] The features and performance of the present invention are further described in detail below in conjunction with the embodiments.
[0031] like Figure 1 As shown, the PWM pulse power supply control method for wafer annealing process includes the following steps:
[0032] Step 1: The consistency module performs consistency joint correction on the PWM pulse power supply and the heating module to obtain a corrected heating power output strategy of the heating module;
[0033] Step 2: Obtain wafer annealing parameters, and the PWM pulse power supply control module generates a PWM pulse power supply module output strategy corresponding to the wafer annealing parameters according to the wafer annealing parameters;
[0034] Step three, according to the PWM pulse power module output strategy corresponding to the wafer annealing parameters and the heating module heating power output strategy, the PWM pulse power control strategy corresponding to the wafer annealing parameters is obtained, the PWM pulse power control module controls the output of the PWM pulse power according to the PWM pulse power control strategy, the heating control module controls the heating module to heat according to the real-time output information of the PWM pulse power, and sends the received output information of the PWM pulse power to the consistency module;
[0035] Step 4: The data acquisition module obtains the heating information of the heating module. The consistency module determines whether the real-time output of the PWM pulse power supply received by the heating control module and the heating power of the heating module are consistent. If they are consistent, the process proceeds to step 6; otherwise, the process proceeds to step 5.
[0036] Step 5: According to the real-time output of the PWM pulse power supply and the heating power of the heating module, the abnormality category is obtained, and the PWM pulse power supply and the heating module are processed according to the abnormality category. After the processing is completed;
[0037] Step six: Wafer annealing is completed until the PWM pulse power supply control strategy corresponding to the wafer annealing parameters is executed.
[0038] The consistency module performs consistency joint correction on the PWM pulse power supply and the heating module to obtain a corrected heating power output strategy for the heating module, including:
[0039] The consistency module detects and eliminates faults of the PWM pulse power supply and the heating module. Through the wafer annealing test parameters, the output of the PWM pulse power supply and the heating data of the heating module corresponding to the PWM pulse power supply output are obtained. The output of the PWM pulse power supply and the heating data of the heating module corresponding to the PWM pulse power supply output constitute the heating power output strategy of the heating module.
[0040] The PWM pulse power control module generates a PWM pulse power module output strategy corresponding to the wafer annealing parameters according to the wafer annealing parameters, including:
[0041] The wafer annealing parameters include an annealing cycle and a heating power, and the annealing cycle includes a heating sub-cycle, a heat preservation sub-cycle and a cooling sub-cycle; according to the heating power in each sub-cycle of the heating sub-cycle, the heat preservation sub-cycle and the cooling sub-cycle, the PWM pulse power output of the corresponding sub-cycle is obtained in the standard heating module heating power output strategy, and the PWM pulse power output of the corresponding sub-cycle and the duration of the corresponding sub-cycle constitute a PWM pulse power module output strategy corresponding to the wafer annealing parameters.
[0042] The PWM pulse power supply control strategy corresponding to the wafer annealing parameters is obtained according to the PWM pulse power supply module output strategy corresponding to the wafer annealing parameters and the heating module heating power supply output strategy, including:
[0043] If the heating power corresponding to the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters is consistent with the heating power output strategy of the heating module, the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters will not be corrected;
[0044] If the heating power corresponding to the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters is inconsistent with that in the heating module heating power output strategy, the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters is replaced with the PWM pulse power module output corresponding to the same heating power in the heating module heating power output strategy; and the PWM pulse power control strategy corresponding to the wafer annealing parameters is obtained.
[0045] The data acquisition module acquires the heating information of the heating module, and the consistency module determines whether the real-time output of the PWM pulse power supply received by the heating control module and the heating power of the heating module are consistent, including:
[0046] According to the PWM pulse power supply control strategy corresponding to the wafer annealing parameters, if the real-time output of the PWM pulse power supply received by the heating control module is consistent with the heating power of the heating module, it is normal; otherwise, it is abnormal.
[0047] The method of obtaining an abnormality category according to the real-time output of the PWM pulse power supply and the heating power of the heating module and performing abnormal processing on the PWM pulse power supply and the heating module according to the abnormality category includes:
[0048] If the real-time output of the PWM pulse power supply and the heating power of the heating module do not conform to the control strategy of the corresponding sub-cycle in the PWM pulse power supply control strategy of the corresponding wafer annealing parameters, it is a Class I abnormality; otherwise, it is a Class II abnormality; if it is a Class I abnormality, an equipment fault alarm is issued and the equipment is stopped; if it is a Class II abnormality, the output of the PWM pulse power supply is adjusted so that the heating power of the heating module conforms to the heating power in the control strategy of the corresponding sub-cycle.
[0049] like Figure 2 As shown, a PWM pulse power supply for a wafer annealing process, applying the PWM pulse power supply control method for a wafer annealing process, includes a PWM pulse power supply module, a PWM pulse power supply control module, a heating control module, a heating module, a data acquisition module, a consistency module and a data processing module;
[0050] The PWM pulse power supply control module, heating control module, data acquisition module and consistency module are respectively connected to the data processing module; the PWM pulse power supply module is connected to the PWM pulse power supply control module; and the heating module is connected to the heating control module.
[0051] like Figure 3 As shown, the heating module includes a plurality of heaters, and the plurality of heaters are respectively connected to the heating control modules.
[0052] Specifically, the present invention proposes a PWM pulse power supply control method for wafer annealing process, which performs consistency joint correction on the PWM pulse power supply and the heating module through a consistency module to ensure that the heating power of the heating module is consistent with the output of the PWM pulse power supply. At the same time, the method generates a corresponding PWM pulse power supply control strategy according to the wafer annealing parameters, and monitors the heating information of the heating module in real time through the data acquisition module to achieve precise control of the annealing process. In abnormal situations, the method can accurately classify and process the abnormalities, thereby improving the stability and reliability of the equipment.
[0053] Specific steps
[0054] Step 1: Consistency Joint Correction
[0055] Fault detection and troubleshooting: The consistency module first performs fault detection and troubleshooting on the PWM pulse power supply and heating module to ensure that both are in normal working condition.
[0056] Heating data acquisition: Through the wafer annealing test parameters, the output of the PWM pulse power supply and the heating data of the heating module corresponding to the PWM pulse power supply output are obtained.
[0057] Output strategy generation: The output of the PWM pulse power supply and the heating data of the corresponding heating module constitute the heating power supply output strategy of the heating module, which serves as the basis for subsequent control.
[0058] Step 2: Generate PWM pulse power module output strategy
[0059] Annealing parameter acquisition: Obtain wafer annealing parameters, including annealing cycle (heating sub-cycle, insulation sub-cycle, cooling sub-cycle) and heating power, etc.
[0060] Output strategy generation: According to the annealing cycle and heating power, the PWM pulse power output of the corresponding sub-cycle is obtained in the standard heating module heating power output strategy, and together with the duration of the corresponding sub-cycle, it constitutes the PWM pulse power module output strategy of the corresponding wafer annealing parameters.
[0061] Step 3: Get the PWM pulse power supply control strategy
[0062] Strategy comparison: Compare the PWM pulse power module output strategy corresponding to the wafer annealing parameters with the heating module heating power output strategy.
[0063] Strategy modification: If the two are consistent, no modification will be made; if they are inconsistent, the output in the PWM pulse power module output strategy will be replaced with the PWM pulse power module output corresponding to the same heating power in the heating module heating power output strategy.
[0064] Control strategy generation: Get the PWM pulse power supply control strategy corresponding to the wafer annealing parameters.
[0065] Step 4: Real-time monitoring and judgment
[0066] Heating information acquisition: The data acquisition module acquires the heating information of the heating module.
[0067] Consistency judgment: The consistency module judges whether the real-time output of the PWM pulse power supply received by the heating control module and the heating power of the heating module are consistent.
[0068] Step 5: Exception handling
[0069] Abnormal category judgment: If the real-time output of the PWM pulse power supply and the heating power of the heating module do not conform to the control strategy of the corresponding sub-cycle in the PWM pulse power supply control strategy of the corresponding wafer annealing parameters, it is a Class I abnormality; otherwise, it is a Class II abnormality.
[0070] Exception handling: If it is a Class I exception, an equipment fault alarm will be issued and the equipment will be stopped; if it is a Class II exception, the output of the PWM pulse power supply will be adjusted to make the heating power of the heating module conform to the heating power in the control strategy of the corresponding sub-cycle.
[0071] Step 6: Annealing completed
[0072] After executing the PWM pulse power supply control strategy corresponding to the wafer annealing parameters, the wafer annealing process is completed.
[0073] Further details
[0074] Fault detection and troubleshooting: The consistency module performs fault detection on the PWM pulse power supply and heating module through preset test parameters and test processes. The detection content includes but is not limited to the stability of the power supply output voltage, the heating uniformity of the heating module, the accuracy of the temperature sensor, etc. If a fault is found, troubleshooting operations are performed to ensure that the equipment is in normal working condition.
[0075] Heating data acquisition: After fault detection and troubleshooting, the output of the PWM pulse power supply and the heating data of the corresponding heating module are obtained through the wafer annealing test parameters. The test parameters can be set according to the actual annealing process requirements, such as setting different annealing temperatures, annealing times, etc.
[0076] Output strategy generation: The acquired heating data is matched with the output of the PWM pulse power supply to form a heating module heating power supply output strategy. This strategy serves as a benchmark for the PWM pulse power supply output in the subsequent annealing process to ensure that the heating power of the heating module is consistent with the output of the PWM pulse power supply.
[0077] PWM pulse power module output strategy generation
[0078] Annealing parameter acquisition: Obtain wafer annealing parameters, including annealing cycle (heating sub-cycle, holding sub-cycle, cooling sub-cycle) and heating power, etc. Annealing parameters can be set according to actual process requirements, and different annealing parameters correspond to different annealing effects.
[0079] Output strategy generation: According to the obtained annealing parameters, the PWM pulse power output of the corresponding sub-cycle is obtained in the standard heating module heating power output strategy. The standard heating module heating power output strategy can be formulated based on actual process experience and experimental data to ensure that the heating power of the heating module is consistent with the output of the PWM pulse power supply under different annealing parameters. At the same time, the duration of the corresponding sub-cycle and the PWM pulse power output together constitute the PWM pulse power module output strategy corresponding to the wafer annealing parameters.
[0080] PWM pulse power supply control strategy generation
[0081] Strategy comparison: Compare the PWM pulse power module output strategy corresponding to the wafer annealing parameters with the heating module heating power output strategy. The comparison includes but is not limited to the PWM pulse power output and heating power of each sub-cycle.
[0082] Strategy correction: If the two are consistent, no correction is made; if they are inconsistent, the output in the PWM pulse power module output strategy is replaced with the PWM pulse power module output corresponding to the same heating power in the heating module heating power output strategy. The purpose of the correction is to ensure that in the actual annealing process, the heating power of the heating module is consistent with the output of the PWM pulse power supply, thereby improving the annealing effect.
[0083] Control strategy generation: After correction, the PWM pulse power supply control strategy corresponding to the wafer annealing parameters is obtained. This strategy serves as the basis for the PWM pulse power supply output in the subsequent annealing process to ensure accurate control of the annealing process.
[0084] Real-time monitoring and judgment
[0085] Heating information acquisition: The data acquisition module acquires the heating information of the heating module in real time, including heating temperature, heating power, etc.
[0086] Consistency judgment: The consistency module judges whether the real-time output of the PWM pulse power supply received by the heating control module and the heating power of the heating module are consistent. The basis for judgment is the control target set in the PWM pulse power supply control strategy corresponding to the wafer annealing parameters.
[0087] Exception handling
[0088] Abnormal category judgment: If the real-time output of the PWM pulse power supply and the heating power of the heating module do not conform to the control strategy of the corresponding sub-cycle in the PWM pulse power supply control strategy of the corresponding wafer annealing parameters, it is a Class I abnormality; otherwise, it is a Class II abnormality. Class I abnormalities usually indicate that the equipment has a fault or serious deviation, and it is necessary to stop the equipment immediately for inspection; Class II abnormalities indicate that the equipment has a slight deviation, which can be corrected by adjusting the output of the PWM pulse power supply.
[0089] Abnormal handling: If it is a Class I abnormality, an equipment fault alarm will be issued and the equipment will be stopped. The alarm information can be sent to the user through an audible and visual alarm or a remote monitoring system for timely processing. If it is a Class II abnormality, the output of the PWM pulse power supply is adjusted so that the heating power of the heating module meets the heating power in the control strategy of the corresponding sub-cycle. The adjustment method can be set according to the actual process requirements and equipment characteristics, such as adjusting the width and frequency of the PWM pulse.
[0090] Annealing completed
[0091] After executing the PWM pulse power supply control strategy corresponding to the wafer annealing parameters, the wafer annealing process is completed. At this time, the quality data of the annealed wafer, such as resistivity, flatness, etc., can be obtained through the data acquisition module to evaluate the annealing effect. If the annealing effect reaches the expected goal, the wafer can enter the next process; if it does not reach the expected goal, the annealing parameters or equipment parameters can be adjusted according to the quality data to improve the annealing effect.
[0092] PWM pulse power supply for wafer annealing process
[0093] To implement the above control method, the present invention also provides a PWM pulse power supply for wafer annealing process, which applies the above control method and includes a PWM pulse power supply module, a PWM pulse power supply control module, a heating control module, a heating module, a data acquisition module, a consistency module and a data processing module.
[0094] PWM pulse power module: used to provide the power required in the annealing process. This module can adjust the output voltage and current according to the control signal of the PWM pulse power control module to achieve precise control of the heating power of the heating module.
[0095] PWM pulse power supply control module: used to receive the control strategy sent by the data processing module and generate the corresponding PWM pulse power supply output signal according to the control strategy. This module can communicate with the data processing module to adjust the output of the PWM pulse power supply in real time to ensure accurate control of the annealing process.
[0096] Heating control module: used to receive the temperature and power information of the heating module, and control the heating power of the heating module according to the output signal of the PWM pulse power supply control module. This module can communicate with the heating module and the data acquisition module to realize real-time monitoring and control of the heating process.
[0097] Heating module: used to heat and anneal the wafer. This module can adjust the heating power according to the control signal of the heating control module to ensure that the wafer obtains the required temperature distribution during the annealing process.
[0098] Data acquisition module: used to collect the heating information of the heating module in real time, including heating temperature, heating power, etc. This module can send the collected data to the data processing module for further processing and analysis.
[0099] Consistency module: used to perform consistency joint calibration on PWM pulse power supply and heating module to ensure that the heating power of the heating module is consistent with the output of PWM pulse power supply. This module can communicate with PWM pulse power supply control module, heating control module and data processing module to achieve consistency and stability of the equipment.
[0100] Embodiment 1:
[0101] In the wafer annealing process of a semiconductor manufacturing company, the PWM pulse power supply control method proposed in the present invention is adopted. In the specific implementation process, consistency joint correction is first performed. The consistency module performs fault detection on the PWM pulse power supply and the heating module through preset test parameters and processes. After confirming that there is no fault, the PWM pulse power supply output and the heating data of the heating module under the wafer annealing test parameters are obtained to generate the heating power supply output strategy of the heating module.
[0102] Next, according to the specific wafer annealing parameters (such as the annealing cycle is 2 hours of heating, 4 hours of heat preservation, 1 hour of cooling, and the heating power is 500W), the PWM pulse power output of the corresponding sub-cycle is obtained in the standard heating module heating power output strategy to form a PWM pulse power module output strategy. Then, this strategy is compared with the heating module heating power output strategy, and it is found that there are slight differences in the PWM pulse power output of the two in the heat preservation sub-cycle, so the strategy is corrected to ensure that the two are consistent.
[0103] During the annealing process, the data acquisition module obtains the heating information of the heating module in real time and sends it to the consistency module for judgment. At a certain moment, the consistency module finds that there are two types of anomalies between the real-time output of the PWM pulse power supply and the heating power of the heating module, that is, the heating power is slightly lower than the set value in the control strategy. Therefore, the PWM pulse power control module adjusts the width of the PWM pulse so that the heating power of the heating module meets the heating power in the control strategy of the corresponding sub-period.
[0104] After the above control process, the wafer successfully completed annealing. The wafer quality data after annealing showed that the resistivity and flatness reached the expected targets and the annealing effect was good.
[0105] Embodiment 2:
[0106] Another semiconductor company introduced the PWM pulse power supply control method of the present invention in its wafer annealing production line. During the consistency joint correction stage, the consistency module detected a slight deviation in the temperature sensor of the heating module, which returned to normal after troubleshooting. Subsequently, the heating data under the wafer annealing test parameters was obtained and matched with the output of the PWM pulse power supply to generate a heating module heating power supply output strategy.
[0107] According to the specific wafer annealing parameters (such as the annealing cycle is 1.5 hours of heating, 3 hours of heat preservation, 0.5 hours of cooling, and the heating power is 600W), the corresponding PWM pulse power module output strategy is generated. During the strategy comparison process, it was found that the PWM pulse power output of the heating sub-cycle was inconsistent with the set value in the heating module heating power output strategy, so the strategy was corrected.
[0108] During the annealing process, the data acquisition module monitors the heating information of the heating module in real time. At a certain moment, the consistency module determines a type of abnormality, that is, the real-time output of the PWM pulse power supply and the heating power of the heating module are seriously inconsistent with the set values in the control strategy. At this time, the system immediately issues an equipment fault alarm and stops the equipment operation. After inspection, it was found that a component inside the PWM pulse power supply module failed. After repairing the fault, the annealing process was restarted and finally completed smoothly. The annealing effect met the expected goal.
[0109] These two embodiments demonstrate the application effect of the PWM pulse power supply control method proposed in the present invention in the actual wafer annealing process. Through consistency joint correction, precise control strategy generation, real-time monitoring and judgment, and abnormality handling, the stability and reliability of the annealing process are ensured, and the quality and production efficiency of wafer annealing are improved.
Claims
1. A PWM pulse power supply control method for wafer annealing process, characterized in that: The steps include: Step 1: The consistency module performs consistency joint correction on the PWM pulse power supply and the heating module to obtain a corrected heating power output strategy of the heating module; Step 2: Obtain wafer annealing parameters, and the PWM pulse power supply control module generates a PWM pulse power supply module output strategy corresponding to the wafer annealing parameters according to the wafer annealing parameters; Step three, according to the PWM pulse power module output strategy corresponding to the wafer annealing parameters and the heating module heating power output strategy, the PWM pulse power control strategy corresponding to the wafer annealing parameters is obtained, the PWM pulse power control module controls the output of the PWM pulse power according to the PWM pulse power control strategy, the heating control module controls the heating module to heat according to the real-time output information of the PWM pulse power, and sends the received output information of the PWM pulse power to the consistency module; Step 4: The data acquisition module obtains the heating information of the heating module. The consistency module determines whether the real-time output of the PWM pulse power supply received by the heating control module and the heating power of the heating module are consistent. If they are consistent, the process proceeds to step 6; otherwise, the process proceeds to step 5. Step 5: According to the real-time output of the PWM pulse power supply and the heating power of the heating module, the abnormality category is obtained, and the PWM pulse power supply and the heating module are processed according to the abnormality category. After the processing is completed; Step six: Wafer annealing is completed until the PWM pulse power supply control strategy corresponding to the wafer annealing parameters is executed.
2. The PWM pulse power supply control method for wafer annealing process according to claim 1, characterized in that: The consistency module performs consistency joint correction on the PWM pulse power supply and the heating module to obtain a corrected heating power output strategy for the heating module, including: The consistency module detects and eliminates faults of the PWM pulse power supply and the heating module. Through the wafer annealing test parameters, the output of the PWM pulse power supply and the heating data of the heating module corresponding to the PWM pulse power supply output are obtained. The output of the PWM pulse power supply and the heating data of the heating module corresponding to the PWM pulse power supply output constitute the heating power output strategy of the heating module.
3. The PWM pulse power supply control method for wafer annealing process according to claim 2, characterized in that: The PWM pulse power control module generates a PWM pulse power module output strategy corresponding to the wafer annealing parameters according to the wafer annealing parameters, including: The wafer annealing parameters include an annealing cycle and a heating power, and the annealing cycle includes a heating sub-cycle, a heat preservation sub-cycle and a cooling sub-cycle; according to the heating power in each sub-cycle of the heating sub-cycle, the heat preservation sub-cycle and the cooling sub-cycle, the PWM pulse power output of the corresponding sub-cycle is obtained in the standard heating module heating power output strategy, and the PWM pulse power output of the corresponding sub-cycle and the duration of the corresponding sub-cycle constitute a PWM pulse power module output strategy corresponding to the wafer annealing parameters.
4. The PWM pulse power supply control method for wafer annealing process according to claim 3, characterized in that: The PWM pulse power supply control strategy corresponding to the wafer annealing parameters is obtained according to the PWM pulse power supply module output strategy corresponding to the wafer annealing parameters and the heating module heating power supply output strategy, including: If the heating power corresponding to the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters is consistent with the heating power output strategy of the heating module, the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters will not be corrected; If the heating power corresponding to the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters is inconsistent with that in the heating module heating power output strategy, the PWM pulse power module output in the PWM pulse power module output strategy corresponding to the wafer annealing parameters is replaced with the PWM pulse power module output corresponding to the same heating power in the heating module heating power output strategy; and the PWM pulse power control strategy corresponding to the wafer annealing parameters is obtained.
5. The PWM pulse power supply control method for wafer annealing process according to claim 4, characterized in that: The data acquisition module acquires the heating information of the heating module, and the consistency module determines whether the real-time output of the PWM pulse power supply received by the heating control module and the heating power of the heating module are consistent, including: According to the PWM pulse power supply control strategy corresponding to the wafer annealing parameters, if the real-time output of the PWM pulse power supply received by the heating control module is consistent with the heating power of the heating module, it is normal; otherwise, it is abnormal.
6. The PWM pulse power supply control method for wafer annealing process according to claim 5, characterized in that: The method of obtaining an abnormality category according to the real-time output of the PWM pulse power supply and the heating power of the heating module and performing abnormal processing on the PWM pulse power supply and the heating module according to the abnormality category includes: If the real-time output of the PWM pulse power supply and the heating power of the heating module do not conform to the control strategy of the corresponding sub-cycle in the PWM pulse power supply control strategy of the corresponding wafer annealing parameters, it is a Class I abnormality; otherwise, it is a Class II abnormality; if it is a Class I abnormality, an equipment fault alarm is issued and the equipment is stopped; if it is a Class II abnormality, the output of the PWM pulse power supply is adjusted so that the heating power of the heating module conforms to the heating power in the control strategy of the corresponding sub-cycle.
7. A PWM pulse power supply for wafer annealing process, characterized in that: A PWM pulse power supply control method for a wafer annealing process according to any one of claims 1 to 6 is applied, comprising a PWM pulse power supply module, a PWM pulse power supply control module, a heating control module, a heating module, a data acquisition module, a consistency module and a data processing module; The PWM pulse power supply control module, heating control module, data acquisition module and consistency module are respectively connected to the data processing module; the PWM pulse power supply module is connected to the PWM pulse power supply control module; and the heating module is connected to the heating control module.
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