Semiconductor structure growth method

Abstract

The present application provides a growth method for a semiconductor structure, comprising: step S1: providing a reaction chamber, wherein the reaction chamber has a chamber body and a chamber cover, wherein the chamber cover has a front side and a back side opposite to each other, wherein a shell is arranged on the back side of the chamber cover, wherein a cooling gas channel is arranged between the chamber cover and the shell, wherein the cooling gas channel is used to pass a cooling mixed gas; step S2: obtaining a first function of how the growth rate of the tested semiconductor structure changes with the thickness of a byproduct layer on the front side of the chamber cover; step S3: obtaining a second function of how the growth rate of the tested semiconductor structure changes with the temperature of the back side of the chamber cover; step S4: setting a set control temperature on the back side of the chamber cover according to the thickness of the byproduct layer on the front side of the chamber cover to stabilize the growth rate of the semiconductor structure, wherein the set control temperature on the back side of the chamber cover is controlled by the proportion of gases with different thermal conductivities in the cooling mixed gas.

Description

Technical Field

[0001] The invention relates to the field of semiconductor technology, and in particular to a growth method for a semiconductor structure. Background Art

[0002] Metal organic vapor deposition (MOCVD) equipment is widely used in mass epitaxial production, and how to effectively reduce production costs and improve utilization has always been a research direction. In the existing epitaxial growth process, in order to accurately epitaxially grow a wavelength that meets the design requirements, a large number of calibrations are required in the early stage. Taking the vertical cavity surface emitting laser as an example, various calibrations are required to complete the growth of the full structure. After multiple rounds of calibrations and test results, the final full structure growth can be carried out. And during the growth process, as the surface deposits on the cavity cover toward the cavity gradually increase, the growth rate of the epitaxial layer material in the chamber gradually increases, causing the epitaxial layer to become thicker and the wavelength of the vertical cavity surface emitting laser to change. With the emergence of these changes, some necessary calibrations and adjustments have to be re-performed before the full structure growth can continue, which will lead to an increase in manpower and material resources. Summary of the invention

[0003] Therefore, the technical problem to be solved by the present invention is how to reduce the cost, thereby providing a method for growing a semiconductor structure.

[0004] The present application provides a method for growing a semiconductor structure, comprising: step S1: providing a reaction chamber, wherein the reaction chamber has a chamber body and a chamber cover, wherein the chamber cover has a front side and a back side opposite to each other, wherein a shell is arranged on the back side of the chamber cover, wherein a cooling gas channel is arranged between the chamber cover and the shell, wherein the cooling gas channel is used to pass a cooling mixed gas; step S2: obtaining a first function of how the growth rate of the tested semiconductor structure changes with the thickness of a byproduct layer on the front side of the chamber cover; step S3: obtaining a second function of how the growth rate of the tested semiconductor structure changes with the temperature of the back side of the chamber cover; step S4: setting a set control temperature of the back side of the chamber cover according to the thickness of the byproduct layer on the front side of the chamber cover to stabilize the growth rate of the semiconductor structure, wherein the set control temperature of the back side of the chamber cover is controlled by the proportion of gases with different thermal conductivities in the cooling mixed gas.

[0005] Optionally, a dimension of the cooling gas channel along a direction parallel to the back side of the cavity cover to the outer shell is 0.3 mm to 0.7 mm.

[0006] Optionally, the cooling mixed gas includes nitrogen and hydrogen.

[0007] Optionally, a first function is obtained in which the growth rate of the test semiconductor structure changes with the thickness of the byproduct layer on the front side of the cavity cover, including: setting the temperature of the back side of the cavity cover fixed, and obtaining the growth rates of multiple test semiconductor structures when the byproduct layer on the front side of the cavity cover is set to different thicknesses; obtaining a first mapping relationship between the growth rate of the test semiconductor structure and the thickness of the byproduct layer on the front side of the cavity cover; and fitting the first function according to the first mapping relationship.

[0008] Optionally, a second function is obtained for obtaining a growth rate of a test semiconductor structure as a function of the temperature of the back side of the cavity cover, including: setting a fixed thickness of the by-product layer on the front side of the cavity cover, and obtaining the growth rates of a plurality of test semiconductor structures when the temperatures of the back side of the cavity cover are different; obtaining a second mapping relationship between the growth rate of the test semiconductor structure and the temperature of the back side of the cavity cover; and fitting the second function according to the second mapping relationship.

[0009] Optionally, the set control temperature on the back side of the cavity cover is set according to the thickness of the by-product layer on the front side of the cavity cover, including: obtaining the nth thickness and the nth set control temperature of the by-product layer on the front side of the cavity cover corresponding to the growth of the nth semiconductor structure; obtaining the n+1th thickness of the by-product layer on the front side of the cavity cover corresponding to the growth of the n+1th semiconductor structure; obtaining a first change in the growth rate according to the thickness difference between the n+1th thickness and the nth thickness and a first function; obtaining the n+1th set control temperature set when the n+1th semiconductor structure grows according to the nth set control temperature, the first change and the second function; wherein n is an integer greater than or equal to 1.

[0010] Optionally, the n+1th set control temperature set when the n+1th semiconductor structure grows is obtained according to the nth set control temperature, the first change and the second function, including: substituting the first change into the second function to obtain the difference between the nth set control temperature and the n+1th set control temperature; obtaining the n+1th set control temperature according to the nth set control temperature and the difference between the nth set control temperature and the n+1th set control temperature.

[0011] Optionally, during the growth of any semiconductor structure, the temperature fluctuation of the back side of the cavity cover is controlled to be between (set control temperature - 1°C) and (set control temperature + 1°C).

[0012] Optionally, the test semiconductor structure includes: a test semiconductor substrate; a test semiconductor body located on one side of the test semiconductor substrate; and obtaining a growth rate of the test semiconductor structure according to a growth thickness and growth time of the test semiconductor body.

[0013] Optionally, it also includes: using a temperature sensor to monitor the temperature of the back side of the cavity cover in real time; adjusting the proportion of gases with different thermal conductivities in the cooling mixed gas according to the set control temperature of the back side of the cavity cover, so as to stabilize the temperature of the back side of the cavity cover during the growth of any one of the semiconductor structures at (set control temperature - 1°C) to (set control temperature + 1°C).

[0014] Optionally, the semiconductor structure is an edge-emitting semiconductor laser or a vertical cavity surface-emitting semiconductor laser.

[0015] The semiconductor structure growth method provided by the technical solution of the present application sets the set control temperature of the back of the cavity cover according to the thickness of the byproduct layer on the front of the cavity cover to stabilize the growth rate of the semiconductor structure, and the set control temperature of the back of the cavity cover is controlled by cooling the proportion of gases with different thermal conductivities in the mixed gas. Adjusting the set control temperature of the back of the cavity cover effectively affects the temperature inside the cavity body on the front side of the cavity cover, thereby stabilizing the growth rate of the semiconductor structure. When the semiconductor structure is a semiconductor light-emitting structure, the situation in which the light-emitting wavelength of the semiconductor structure shifts as the thickness of the byproduct layer on the front of the cavity cover increases can be quickly and easily corrected, stabilizing the light-emitting wavelength of the semiconductor structure to the target wavelength, achieving continuous and repeatable production while reducing calibration costs and reducing investment in manpower and material costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 A flow chart of a method for growing a semiconductor structure in the present application;

[0018] Figure 2 A first function curve diagram showing a change in the growth rate of a semiconductor structure tested according to an embodiment of the present invention as the thickness of a byproduct layer on the front surface of the cavity cover changes;

[0019] Figure 3 It is a second function curve diagram of the growth rate of the semiconductor structure tested according to one embodiment of the present invention as the temperature of the back side of the cavity cover changes. DETAILED DESCRIPTION

[0020] The reaction chamber has a chamber body and a chamber cover, and a heating base is provided inside the chamber body. During the service life of the reaction chamber, as the reaction chamber is used for a longer period of time, the by-product layer deposited on the front of the chamber cover gradually thickens, causing the overall distance between the chamber cover and the by-product layer and the heating base to become closer, causing the temperature of the front of the chamber cover to increase. The increase in the temperature of the chamber cover heated by the heating base has a great influence on the temperature field in the reaction chamber, further affecting the decomposition of the gas source, thereby causing the growth rate of the epitaxial material to accelerate and the wavelength of the epitaxial material to change. With the emergence of these changes, some necessary calibration and adjustments have to be re-performed before the full structure growth can continue, which will lead to an increase in manpower and material resources.

[0021] On this basis, the present invention provides a method for growing a semiconductor structure, wherein the set control temperature of the back of the cavity cover is set according to the thickness of the byproduct layer on the front of the cavity cover, and the set control temperature of the back of the cavity cover affects the temperature on the front side of the cavity cover to achieve the purpose of controlling the growth rate of the semiconductor structure. At the same time, this method of temperature control to stabilize the growth rate of the semiconductor structure can effectively reduce the verification growth and reduce the production cost.

[0022] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0024] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0025] An embodiment of the present invention provides a method for growing a semiconductor structure, referring to Figure 1 ,include:

[0026] Step S1: providing a reaction chamber, wherein the reaction chamber has a chamber body and a chamber cover, wherein the chamber cover has a front side and a back side opposite to each other, a shell is arranged on the back side of the chamber cover, and a cooling gas channel is arranged between the chamber cover and the shell, wherein the cooling gas channel is used to pass a cooling mixed gas;

[0027] Step S2: obtaining a first function of the growth rate of the test semiconductor structure as a function of the thickness of the byproduct layer on the front side of the cavity cover;

[0028] Step S3: obtaining a second function of the growth rate of the test semiconductor structure as a function of the temperature of the back side of the chamber cover;

[0029] Step S4: setting the set control temperature of the back side of the chamber cover according to the thickness of the byproduct layer on the front side of the chamber cover to stabilize the growth rate of the semiconductor structure, wherein the set control temperature of the back side of the chamber cover is controlled by cooling the proportion of gases with different thermal conductivities in the mixed gas.

[0030] In this embodiment, the set control temperature of the back of the cavity cover is set according to the thickness of the byproduct layer on the front of the cavity cover to stabilize the growth rate of the semiconductor structure, and the set control temperature of the back of the cavity cover is controlled by cooling the ratio of gases with different thermal conductivities in the mixed gas. Adjusting the set control temperature of the back of the cavity cover effectively affects the temperature inside the cavity body on the front side of the cavity cover, thereby stabilizing the growth rate of the semiconductor structure. When the semiconductor structure is a semiconductor light-emitting structure, the situation in which the light-emitting wavelength of the semiconductor structure shifts as the thickness of the byproduct layer on the front of the cavity cover increases can be quickly and easily corrected, stabilizing the light-emitting wavelength of the semiconductor structure to the target wavelength, achieving continuous and repeatable production while reducing calibration costs, and reducing the investment in manpower and material costs.

[0031] When the semiconductor structure is a semiconductor light-emitting structure, the wavelength deviation of the semiconductor structure can be adjusted timely and effectively, thereby improving the utilization rate of the machine and the continuous repetitive growth of the product, saving calibration time, and improving product productivity.

[0032] The semiconductor structure is an edge-emitting semiconductor laser or a vertical cavity surface-emitting semiconductor laser. The semiconductor structure includes: a semiconductor substrate; a semiconductor body located on one side of the semiconductor substrate. In one embodiment, the semiconductor structure is an edge-emitting semiconductor laser, and the semiconductor body includes a stacked lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. In another embodiment, the semiconductor structure is a vertical cavity surface-emitting semiconductor laser, and the semiconductor body includes a stacked first Bragg reflector, an active layer, and a second Bragg reflector.

[0033] The test semiconductor structure includes: a test semiconductor substrate; a test semiconductor body located on one side of the test semiconductor substrate. The material of the test semiconductor substrate is the same as that of the semiconductor substrate. The test semiconductor body and the semiconductor body have the same structure. For example, when the test semiconductor structure and the semiconductor structure are both edge-emitting semiconductor lasers, the test semiconductor body includes a stacked test lower confinement layer, a test lower waveguide layer, a test active layer, a test upper waveguide layer and a test upper confinement layer, the test lower confinement layer and the lower confinement layer have the same material, the test lower waveguide layer and the lower waveguide layer have the same material, the test active layer and the active layer have the same material, the test upper waveguide layer and the upper waveguide layer have the same material, and the test upper confinement layer and the upper confinement layer have the same material. For example, when the test semiconductor structure and the semiconductor structure are both vertical cavity surface emitting semiconductor lasers, the test semiconductor body includes a stacked first test Bragg reflector, a test active layer and a second test Bragg reflector, the first test Bragg reflector and the first Bragg reflector have the same material, the test active layer and the active layer have the same material, and the second test Bragg reflector and the second Bragg reflector have the same material.

[0034] It should be noted that, in other embodiments, the semiconductor structure is not limited to edge emitting semiconductor lasers and vertical cavity surface emitting semiconductor lasers. The test semiconductor structure is not limited to edge emitting semiconductor lasers and vertical cavity surface emitting semiconductor lasers.

[0035] The reaction chamber is a deposition reaction chamber, such as a metal organic compound chemical vapor deposition reaction chamber.

[0036] The reaction chamber has a chamber body and a chamber cover, and the chamber cover has a front side and a back side opposite to each other. The front side of the chamber cover faces the interior of the chamber body, and the back side of the chamber cover faces away from the interior of the chamber body. The reaction chamber also includes a base located inside the chamber body. When growing a semiconductor structure, a semiconductor substrate is placed on the base, and a reaction gas is introduced into the interior of the chamber body to grow a semiconductor body on the side of the semiconductor substrate away from the base. When growing a test semiconductor structure, a test semiconductor substrate is placed on the base, and a reaction gas is introduced into the interior of the chamber body to grow a test semiconductor body on the side of the test semiconductor substrate away from the base.

[0037] The reaction chamber further comprises: a heating device located in the main body of the chamber, the heating device is located at the bottom of the base, and the temperature of the heating device used in forming the test semiconductor structure is the same as the temperature of the heating device used in forming the semiconductor structure.

[0038] The cavity cover includes a graphite ceiling, and the shell on the back side of the cavity cover can be a stainless steel shell.

[0039] In one embodiment, a dimension of the cooling gas channel along a direction parallel to the back side of the cavity cover to the housing is about 0.3 mm to 0.7 mm, for example, 0.5 mm.

[0040] In one embodiment, the cooling mixed gas includes nitrogen and hydrogen, and the thermal conductivities of nitrogen and hydrogen are different. It should be noted that in other embodiments, the cooling mixed gas may be selected from other gases with different thermal conductivities.

[0041] The cooling mixed gas may contain two gases with different thermal conductivities, or may contain three gases with different thermal conductivities, or more than three gases with different thermal conductivities.

[0042] In one embodiment, obtaining a first function of the growth rate of the test semiconductor structure as a function of the thickness of the byproduct layer on the front side of the chamber cover includes: setting the temperature of the back side of the chamber cover to be fixed, and obtaining the growth rates of multiple test semiconductor structures when the byproduct layer on the front side of the chamber cover is set to different thicknesses; obtaining a first mapping relationship between the growth rate of the test semiconductor structure and the thickness of the byproduct layer on the front side of the chamber cover; and fitting the first function according to the first mapping relationship. It should be noted that other parameters of the growth process of the multiple test semiconductor structures are consistent, and other parameters include, for example, chamber pressure, temperature of the heating device, material of the reaction gas, and flow rate of the reaction gas.

[0043] In one embodiment, the first function is a linear function.

[0044] refer to Figure 2 , Figure 2 is a schematic diagram of the first function, Figure 2 The horizontal axis in is the thickness of the byproduct layer, in μm. Figure 2 The vertical axis is the growth rate in μm / h.

[0045] In one embodiment, obtaining a second function of the growth rate of the test semiconductor structure as the temperature of the back side of the chamber cover changes includes: setting the thickness of the byproduct layer on the front side of the chamber cover to be fixed, and obtaining the growth rates of multiple test semiconductor structures when the temperature of the back side of the chamber cover is different; obtaining a second mapping relationship between the growth rate of the test semiconductor structure and the temperature of the back side of the chamber cover; and fitting the second function according to the second mapping relationship. It should be noted that other parameters of the growth process of the multiple test semiconductor structures are consistent, and other parameters include, for example, chamber pressure, temperature of the heating device, material of the reaction gas, and flow rate of the reaction gas.

[0046] In one embodiment, the second function is a linear function.

[0047] refer to Figure 3 , Figure 3is a schematic diagram of the second function, Figure 3 The horizontal axis is temperature in °C. Figure 3 The vertical axis is the growth rate in μm / h.

[0048] In one embodiment, setting the set control temperature of the back side of the cavity cover according to the thickness of the byproduct layer on the front side of the cavity cover comprises: obtaining the nth thickness and the nth set control temperature of the byproduct layer on the front side of the cavity cover corresponding to the growth of the nth semiconductor structure; obtaining the n+1th thickness of the byproduct layer on the front side of the cavity cover corresponding to the growth of the n+1th semiconductor structure; obtaining the first change of the growth rate according to the thickness difference between the n+1th thickness and the nth thickness and the first function; obtaining the n+1th set control temperature set when the n+1th semiconductor structure grows according to the nth set control temperature, the first change and the second function; wherein n is an integer greater than or equal to 1. When the thickness difference between the n+1th thickness and the nth thickness is positive, the first change is positive; when the thickness difference between the n+1th thickness and the nth thickness is negative, the first change is negative; when the thickness difference between the n+1th thickness and the nth thickness is zero, the first change is zero.

[0049] In one embodiment, the n+1th set control temperature set when the n+1th semiconductor structure grows is obtained according to the nth set control temperature, the first change and the second function, including: substituting the first change into the second function to obtain the difference between the nth set control temperature and the n+1th set control temperature; obtaining the n+1th set control temperature according to the nth set control temperature and the difference between the nth set control temperature and the n+1th set control temperature. When the first change is a positive number, the difference between the nth set control temperature and the n+1th set control temperature is a positive number; when the first change is a negative number, the difference between the nth set control temperature and the n+1th set control temperature is a negative number; when the first change is zero, the difference between the nth set control temperature and the n+1th set control temperature is zero.

[0050] For example, the first thickness of the byproduct layer on the front side of the cavity cover corresponding to the growth of the first semiconductor structure and the first set control temperature are obtained; the second thickness of the byproduct layer on the front side of the cavity cover corresponding to the growth of the second semiconductor structure is obtained, when the second thickness is greater than the first thickness, the thickness difference between the n+1th thickness and the nth thickness is a positive number, and the first change is a positive number; the first change is substituted into the second function to obtain the difference between the first set control temperature and the second set control temperature, when the first change is a positive number, the difference between the first set control temperature and the second set control temperature is a positive number, and the second set control temperature is obtained according to the first set control temperature and the difference between the first set control temperature and the second set control temperature, and the second set control temperature is less than the first set control temperature.

[0051] In one embodiment, during the growth of any semiconductor structure, the temperature fluctuation of the back side of the chamber cover is controlled within the range of (set control temperature - 1°C) to (set control temperature + 1°C). This ensures that the temperature fluctuation inside the chamber body is small and stabilizes the growth rate of the semiconductor structure.

[0052] In one embodiment, the test semiconductor structure includes: a test semiconductor substrate; a test semiconductor body located on one side of the test semiconductor substrate; and obtaining a growth rate of the test semiconductor structure according to a growth thickness and a growth time of the test semiconductor body.

[0053] The growth rate of the semiconductor structure is obtained based on the growth thickness and growth time of the semiconductor body.

[0054] In one embodiment, the method further includes: using a temperature sensor to monitor the temperature of the back side of the cavity cover in real time; adjusting the ratio of gases with different thermal conductivities in the cooling mixed gas according to the set control temperature of the back side of the cavity cover, thereby stabilizing the temperature of the back side of the cavity cover in the range of (set control temperature - 1°C) to (set control temperature + 1°C) during the growth of any one of the semiconductor structures.

[0055] For semiconductor structures grown in different time periods in the reaction chamber, the set control temperature of the back side of the chamber cover corresponding to the semiconductor structures grown in different time periods can be set to be different. The set control temperature of the back side of the chamber cover corresponding to the semiconductor structures grown in the same time period can be stabilized at (set control temperature - 1°C) to (set control temperature + 1°C).

[0056] The cooling gas channel is used to pass a cooling mixed gas, which includes a first gas and a second gas with different thermal conductivities. When the total flow rate of the cooling mixed gas is fixed, the change in the first gas and the change in the cavity cover temperature change linearly, and the change in the second gas and the change in the cavity cover temperature change linearly.

[0057] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. A method for growing a semiconductor structure, characterized in that: include: Step S1: providing a reaction chamber, wherein the reaction chamber has a chamber body and a chamber cover, wherein the chamber cover has a front side and a back side opposite to each other, a shell is arranged on the back side of the chamber cover, and a cooling gas channel is arranged between the chamber cover and the shell, wherein the cooling gas channel is used to pass a cooling mixed gas; Step S2: obtaining a first function of the growth rate of the test semiconductor structure as a function of the thickness of the byproduct layer on the front side of the cavity cover; Step S3: obtaining a second function of the growth rate of the test semiconductor structure as a function of the temperature of the back side of the chamber cover; Step S4: setting a set control temperature on the back side of the chamber cover according to the thickness of the byproduct layer on the front side of the chamber cover to stabilize the growth rate of the semiconductor structure, wherein the set control temperature on the back side of the chamber cover is controlled by cooling the ratio of gases with different thermal conductivities in the mixed gas; Wherein, the set control temperature on the back side of the cavity cover is set according to the thickness of the by-product layer on the front side of the cavity cover, including: obtaining the nth thickness and the nth set control temperature of the by-product layer on the front side of the cavity cover corresponding to the growth of the nth semiconductor structure; obtaining the n+1th thickness of the by-product layer on the front side of the cavity cover corresponding to the growth of the n+1th semiconductor structure; obtaining the first change of the growth rate according to the thickness difference between the n+1th thickness and the nth thickness and the first function; substituting the first change into the second function to obtain the difference between the nth set control temperature and the n+1th set control temperature; obtaining the n+1th set control temperature set when the n+1th semiconductor structure grows according to the nth set control temperature and the difference between the nth set control temperature and the n+1th set control temperature; wherein n is an integer greater than or equal to 1.

2. The method for growing a semiconductor structure according to claim 1, characterized in that: The dimension of the cooling gas channel along a direction parallel to the back side of the cavity cover to the housing is 0.3 mm to 0.7 mm.

3. The method for growing a semiconductor structure according to claim 1, characterized in that: The cooling mixed gas includes nitrogen and hydrogen.

4. The method for growing a semiconductor structure according to claim 1, characterized in that: Obtaining a first function of the growth rate of the test semiconductor structure as a function of the thickness of the byproduct layer on the front surface of the cavity cover, comprising: Setting the temperature of the back side of the cavity cover to be fixed, and obtaining the growth rates of a plurality of test semiconductor structures when the byproduct layer on the front side of the cavity cover is set to have different thicknesses; Acquire a first mapping relationship between a growth rate of a test semiconductor structure and a thickness of a byproduct layer on a front side of the cavity cover; The first function is fitted according to a first mapping relationship.

5. The method for growing a semiconductor structure according to claim 1, characterized in that: Obtaining a second function of the growth rate of the test semiconductor structure as a function of the temperature of the back side of the chamber cover, comprising: Setting the thickness of the byproduct layer on the front side of the cavity cover to be fixed, and obtaining the growth rates of a plurality of test semiconductor structures when the temperature on the back side of the cavity cover is different; Acquire a second mapping relationship between a growth rate of a test semiconductor structure and a temperature of a back side of the chamber cover; The second function is fitted according to the second mapping relationship.

6. The method for growing a semiconductor structure according to claim 1, characterized in that: During the growth of any semiconductor structure, the temperature fluctuation of the back side of the cavity cover is controlled within the range of (set control temperature - 1°C) to (set control temperature + 1°C).

7. The method for growing a semiconductor structure according to claim 1, characterized in that: The test semiconductor structure comprises: a test semiconductor substrate; a test semiconductor body located at one side of the test semiconductor substrate; and a growth rate of the test semiconductor structure is obtained according to the growth thickness and growth time of the test semiconductor body.

8. The method for growing a semiconductor structure according to claim 1, characterized in that: Also includes: A temperature sensor is used to monitor the temperature of the back side of the cavity cover in real time; According to the set control temperature of the back side of the cavity cover, the ratio of gases with different thermal conductivities in the cooling mixed gas is adjusted, so that the temperature of the back side of the cavity cover is between (set control temperature - 1°C) and (set control temperature + 1°C) during the stable growth of any one of the semiconductor structures.

9. The method for growing a semiconductor structure according to claim 1, characterized in that: The semiconductor structure is an edge-emitting semiconductor laser or a vertical cavity surface-emitting semiconductor laser.

Images