Plasma source cluster and PECVD apparatus

Abstract

A plasma source cluster and a PECVD apparatus are provided. The plasma source cluster includes a plurality of plasma sources and a mounting base. Each plasma source includes a cover, an insulating housing, an insulating dielectric cylinder, a capacitive electrode sheet, and an inductive coil. The cover is sealed and fixed on the insulating housing. The cover has a gas inlet for both deposition gas and cleaning gas. The insulating housing has a hollow cavity. The insulating dielectric cylinder occupies a position close to the cover of the hollow cavity so that a part of the hollow cavity away from the cover is an empty whole cavity. The insulating dielectric cylinder has a plurality of through holes. Each through hole is connected to the gas inlet and the whole cavity. The capacitive electrode sheet is arranged on the insulating dielectric cylinder to form a capacitor at each through hole. The inductive coil is wound outside the insulating housing and corresponds to the whole cavity. The mounting base has an inner cavity, a plurality of upper openings, and a lower opening. The insulating housing of each plasma source is mounted in a corresponding upper opening. The lower opening is used to communicate with a process cavity.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of semiconductor, and more particularly, to a plasma source cluster and a PECVD apparatus. BACKGROUND

[0002] Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely used film deposition method in semiconductor and photovoltaic manufacturing. A general PECVD apparatus uses a remote plasma source (RPS) and a cathode plate connected by an RF power source to form plasma, and decomposes precursor gas into plasma or atomic state to complete the deposition or processing of the process film.

[0003] In a PECVD used for photovoltaic heterojunction production, there are generally two sets of plasma generation systems. As shown in Figure 1 and Figure 2 , one set is an RF power source that feeds an alternating electric field into the upper and lower ends of the process chamber to deposit amorphous silicon or microcrystalline silicon film to form the film structure required for solar cells. The thin film is not only deposited on the surface of the silicon wafer, but also deposited on the inner wall of the process chamber and the process carrier plate. The other set is a remote plasma source system that ionizes and decomposes etching gas into active atoms or ions, which is then introduced into the process chamber to etch and remove amorphous silicon and microcrystalline silicon film inside the process chamber and the process carrier plate.

[0004] In the photovoltaic PECVD apparatus shown in Figure 1 and Figure 2 , the PECVD apparatus introduces deposition film gas into the process chamber (PC), and the deposition film gas forms plasma near the cathode plate connected by the RF power source to deposit the film, or a single remote plasma source is used to decompose and ionize the excitation cleaning gas, which is then introduced into the process chamber through the central gas path.

[0005] In the PECVD apparatus shown in Figure 1 and Figure 2 , a single RPS inputs plasma, and it is difficult for the etching material to uniformly cover the entire surface of the carrier plate. Generally, the middle etching rate is fast, and the etching rate around the middle is slow. Increasing the reaction time can cause damage to the carrier plate, as shown in Figure 3 , the shadowed part is the area where the reaction rate is slower when cleaning the carrier plate. Similarly, when using a remote plasma to deposit a film, the film layer in the shadowed part of the carrier plate is also prone to uneven deposition.

[0006] The RPS of the single process cavity adopts ICP to generate plasma, but in actual use, in order to clean the amorphous silicon film layer on the PECVD, the size of the single RPS reaction cavity needs to be greater than 10L or more, and the larger reaction cavity will cause the etching gas decomposition rate to decrease, and the actual use amount to decrease. In order to achieve a better etching effect, a large amount of etching gas needs to be introduced, resulting in high cost. SUMMARY

[0007] In view of the problems in the background art, one object of the present disclosure is to provide a plasma source cluster and a PECVD device which can improve the uniformity of the deposition film and the uniformity of the film cleaning process.

[0008] Another object of the present disclosure is to provide a plasma source cluster and a PECVD device which can improve the film deposition reaction rate and the cleaning etching rate, and save process gas.

[0009] Thus, a plasma source cluster is provided, which comprises a plurality of plasma sources spaced apart from each other and a mounting seat; each plasma source comprises an upper cover, an insulating shell, an insulating medium column, a capacitive electrode sheet, and an inductive coil; the upper cover is sealingly fixed on the insulating shell, and the upper cover has an axial gas inlet passage for introducing process gas of deposition film forming gas or cleaning gas and shared by the deposition film forming gas and the cleaning gas; the insulating shell has a hollow cavity; the insulating medium column occupies a position close to the upper cover of the hollow cavity of the insulating shell so that a part of the hollow cavity of the insulating shell located away from the upper cover of the insulating medium column is an overall cavity part which is kept empty and not occupied, the insulating medium column has a plurality of axial through holes spaced apart from each other, and each through hole is communicated with the gas inlet passage and the overall cavity part; the capacitive electrode sheet is arranged on the insulating medium column so that the capacitive electrode sheet forms a capacitor together with the insulating medium column at each through hole, and the capacitor is used for generating a capacitive coupled plasma in the capacitor formed at each through hole by the process gas entering through the gas inlet passage, and the capacitive coupled plasma is discharged to the overall cavity part; the inductive coil is wound outside the insulating shell and corresponds to the overall cavity part of the hollow cavity of the insulating shell in position, and the inductive coil is used for inductively coupling the capacitive coupled plasma discharged from the plurality of through holes to the overall cavity part; the mounting seat has an inner cavity, a plurality of spaced apart upper openings at the top, and a lower opening at the bottom; the insulating shell of each plasma source is mounted in a corresponding upper opening, and the overall cavity part of the insulating shell of each plasma source is communicated with the inner cavity of the mounting seat; the lower opening of the mounting seat is used for being communicated with an inner space of a process cavity, and the process cavity is used for receiving plasma supplied by the plurality of plasma sources of the plasma source cluster through the mounting seat to perform PECVD deposition film forming or cleaning of the film deposited by the process cavity and / or the film deposited on a carrier plate.

[0010] A PECVD device includes a process cavity, the process cavity includes a plurality of plasma source clusters and a process cavity body; the plurality of plasma source clusters are arranged on the same outer surface of the process cavity body at intervals; each plasma source cluster includes a plurality of plasma sources arranged at intervals; each plasma source includes an upper cover, an insulating shell, an insulating medium column, a capacitive electrode sheet, and an inductive coil; the upper cover is sealingly fixed on the insulating shell, the upper cover has an axial gas inlet passage for passing in process gas of deposition coating gas or cleaning gas and shared by the deposition coating gas and the cleaning gas; the insulating shell has a hollow cavity; the insulating medium column occupies a position close to the upper cover of the hollow cavity of the insulating shell so that a part of the hollow cavity of the insulating shell away from the upper cover is an empty overall cavity; the insulating medium column has a plurality of axial through holes arranged at intervals, each through hole is communicated with the gas inlet passage and the overall cavity; the capacitive electrode sheet is arranged on the insulating medium column so that the capacitive electrode sheet and the insulating medium column at each through hole form a capacitor at each through hole, the capacitor is used for generating a capacitive coupled plasma in the capacitor formed by each through hole for the process gas entering through the gas inlet passage, and the capacitive coupled plasma is discharged into the overall cavity; the inductive coil is wound outside the insulating shell and corresponds to the overall cavity of the hollow cavity of the insulating shell in position, and the inductive coil is used for inductively coupling the capacitive coupled plasma discharged from the plurality of through holes into the overall cavity; the overall cavity of each plasma source is communicated with the inner space of the process cavity body; the process cavity body is used for receiving the plasma supplied by the plasma sources of the plurality of plasma source clusters to perform PECVD deposition coating or cleaning of the film layer coated by the process cavity body and / or the film layer coated on the carrier plate.

[0011] The beneficial effects of the present disclosure are as follows.

[0012] In the PECVD device according to the present disclosure, by arranging the plurality of plasma source clusters on the same outer surface of the process cavity body at intervals, and each plasma source cluster including a plurality of plasma sources arranged at intervals, the single large plasma source combined with the process cavity is divided into a plurality of small plasma source clusters and the process cavity, and the single gas and plasma passage on the top of the process cavity is divided into a plurality of plasma passages (gas inlet from the gas inlet passage of the plasma source of the plurality of plasma source clusters) formed by the plasma sources of the plurality of plasma source clusters, while the plurality of small plasma source clusters are arranged above the process cavity, the uniformity of deposition coating and the uniformity of film layer cleaning process are improved. The PECVD device according to the present disclosure can meet the needs of solar cell piece coating and the cleaning requirements of the carrier plate and the process cavity, effectively reducing the equipment cost and the gas consumption of the process.

[0013] In the PECVD device according to the present disclosure, the plasma quantity that can be generated by the existing large plasma source coil is divided into being commonly generated by a plurality of small plasma source clusters. Compared with a single large plasma source, the plurality of small plasma source clusters or even the plurality of plasma sources in each plasma source cluster can individually control the plasma flow, thereby controlling the film coating uniformity and cleaning uniformity of the region in the process cavity, improving the film coating reaction rate and cleaning etching rate, and saving process gas. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 is a sectional view of a known PECVD device.

[0015] Figure 2 is a simplified diagram of Figure 1 to show the way of process gas input.

[0016] Figure 3 is a schematic effect diagram when the conventional PECVD device of Figure 1 cleans the carrier plate.

[0017] Figure 4 is a perspective view of a plasma source according to the present disclosure.

[0018] Figure 5 is a partially exploded view of the first embodiment of the plasma source of Figure 4 .

[0019] Figure 6 is a further exploded view of Figure 5 .

[0020] Figure 7 is a perspective view of the insulating housing of the plasma source of Figure 5 , wherein the lower insulating sheet located in the insulating housing is shown.

[0021] Figure 8 is an assembly view of the insulating medium column and the capacitive electrode sheet in Figure 6 .

[0022] Figure 9 is an exploded view of the insulating medium column and the capacitive electrode sheet in Figure 8 .

[0023] Figure 10 is a perspective sectional view of the first embodiment of the plasma source of Figure 4 .

[0024] Figure 11 is a partially exploded view of the second embodiment of the plasma source of Figure 4 .

[0025] Figure 12 is a further exploded view of Figure 11 .

[0026] Figure 13 is a sectional view of the insulating dielectric column and the capacitive electrode sheet in Figure 12 .

[0027] Figure 14 is a perspective view of the insulating housing of the plasma source of Figure 11 .

[0028] Figure 15 is a perspective sectional view of the second embodiment of the plasma source of Figure 4 .

[0029] Figure 16 is a schematic view of the electrical connections of the radio frequency power supply and the first lead of the capacitive electrode sheet, the first electrode sheet, the second lead, the second electrode sheet and the inductive coil in the first and second embodiments of the plasma source of Figure 4 .

[0030] Figure 17 is a perspective view of a cluster of plasma sources according to the present disclosure.

[0031] Figure 18 is a perspective sectional view of Figure 17 .

[0032] Figure 19 is a perspective view of a PECVD apparatus of the present disclosure.

[0033] Figure 20 is a top view of Figure 19 .

[0034] Figure 21 is a rear view of Figure 19 .

[0035] Figure 22 is a sectional view along line I-I of Figure 21 .

[0036] Figure 23 is a perspective sectional view of Figure 19 .

[0037] Figure 24 is a partially exploded view of Figure 19 .

[0038] Figure 25 is an exploded view of a partial structure of Figure 19 .

[0039] Figure 26 is a top perspective view of a gas distribution plate of Figure 25 .

[0040] Figure 27 is a schematic view of different layouts of a gas distribution plate.

[0041] Figure 28 is a simplified schematic diagram of a PECVD apparatus of the present disclosure.

[0042] Wherein the reference signs are explained as follows:

[0043] M PECVD apparatus 200b upper opening

[0044] C process cavity 200c lower opening

[0045] 1000 plasma source cluster 300 shield

[0046] 100 plasma source 2000 process cavity

[0047] D axial 2001 inner space

[0048] 1 upper cover 2002 cavity

[0049] 11 air inlet 2003 cavity cover

[0050] 2 insulating shell A mounting hole

[0051] 21 hollow cavity 2004 surrounding wall

[0052] 211 integral cavity P through hole

[0053] 22 mounting flange 2005 bottom plate

[0054] 3 insulating medium column 3000 gas distribution assembly

[0055] 31 through hole 3001 alignment plate

[0056] 4 capacitive electrode sheet G alignment hole

[0057] 41 first electrode sheet 3002 gas distribution plate

[0058] 411 first perforation R area

[0059] 42 second electrode sheet W gas path

[0060] 421 second perforation CL hollow column

[0061] 43 first lead V perforation

[0062] 44 second lead 3003 spacer strip

[0063] 5 inductive coil 3004 ring plate

[0064] 6 upper insulating sheet 3005 insulating gasket

[0065] 61 upper via 3006 sealing ring

[0066] 7 Lower insulation sheet T transmission cavity

[0067] 71 lower via E entrance and exit

[0068] 8 Inductor coil frame B carrier board

[0069] 9 RF power supply H telescopic manipulator

[0070] 200 Mounting Base S Base Plate

[0071] 200a inner cavity F loading cavity

[0072] D1 up and down direction DETAILED DESCRIPTION

[0073] The accompanying drawings show embodiments of the present disclosure, and it will be understood that the disclosed embodiments are merely examples of the present disclosure, which can be implemented in various forms. Therefore, the specific details disclosed herein should not be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one of ordinary skill in the art to implement the present disclosure in various ways.

[0074] [Plasma source]

[0075] Reference Figures 4 to 16 The plasma source 100 includes an upper cover 1 , an insulating shell 2 , an insulating dielectric column 3 , a capacitor electrode sheet 4 , and an inductor coil 5 .

[0076] The upper cover 1 is sealed and fixed to the insulating housing 2. The upper cover 1 has an air inlet 11 extending in the axial direction D. The air inlet 11 is used to introduce process gases such as deposition coating gas or cleaning gas, and is shared by the coating gas and the cleaning gas. The insulating housing 2 has a hollow cavity 21. The insulating dielectric column 3 occupies a position near the upper cover 1 in the hollow cavity 21 of the insulating housing 2, so that the portion of the hollow cavity 21 of the insulating housing 2 located away from the upper cover 1 by the insulating dielectric column 3 remains empty and unoccupied as an integral cavity 211. The insulating dielectric column 3 has a plurality of through holes 31 extending in the axial direction D and spaced apart from each other in the radial and circumferential directions. Each through hole 31 is connected to the air inlet 11 and the integral cavity 211. The capacitor electrode sheet 4 is disposed on the insulating dielectric column 3 so that the capacitor electrode sheet 4 and the insulating dielectric column 3 together form a capacitor at each through-hole 31. The capacitor is used to generate a capacitively coupled plasma in the capacitor formed at each through-hole 31 in the process gas entering through the inlet duct 11, and the capacitively coupled plasma is discharged into the overall cavity 211. The inductor coil 5 is wound around the outside of the insulating housing 2 and corresponds in position to the overall cavity 211 of the hollow cavity 21 of the insulating housing 2. The inductor coil 5 is used to inductively couple the capacitively coupled plasma discharged from the multiple through-holes 31 into the overall cavity 211.

[0077] In the plasma source 100 of the present disclosure, the process gas introduced through the gas inlet 11 of the upper cover 1 first forms a plurality of capacitive couplings in the plurality of through holes 31 of the dielectric column 3, respectively, to form a small amount of capacitive coupling plasma, and ignition / ignition is easily, reliably and stably completed by using the loose ignition / ignition condition of capacitive coupling (i.e. a large ignition pressure range, i.e. a low ignition pressure requirement). The capacitive coupling plasma formed in each of the plurality of through holes 31 enters the whole cavity 211 after passing through the respective through holes 31, and forms an inductive coupling by the action of the inductive coil 5, which makes the capacitive coupling plasma entering the whole cavity 211 enhanced in plasma density after inductive coupling due to the full play of the advantage of inductive coupling on plasma density. Thus, from easy, reliable and stable ignition / ignition to the enhancement of plasma density, the advantages of capacitive coupling plasma (CCP) and inductive coupling plasma (ICP) are fully played out, so that the plasma supplied to the process chamber 2000 described below can be reliable and stable during the process operation, and the uniformity of the film deposition / purification of the film layer is improved in, for example, PECVD deposition film deposition or purification of the film layer deposited by the process chamber 2000 or the film layer deposited on the carrier B. Thus, the plasma source 100 of the present disclosure can also be referred to as a hybrid remote plasma source (Hybrid RPS).

[0078] Compared with the capacitance formed by only the upper electrode and the lower electrode in the reaction chamber, in the plasma source 100 of the present disclosure, since the capacitance is formed at the plurality of through holes 31, the ignition / ignition can be fully ensured to improve the stability of the operation.

[0079] Compared with the structure of the background art Figure 1 and Figure 2 In the structure of the background art, the PECVD device adopts CCP (capacitive coupling) for film deposition process plasma generation mode, and ICP as a plasma source for cleaning. In the plasma source 100 of the present disclosure, CCP and ICP are integrated into the same plasma source 100, i.e. the plasma source 100 can meet the requirements of the radio frequency power source and the requirements of the remote plasma source, and the two are combined into one. Further, because CCP and ICP are integrated into the same plasma source 100, the gas inlet 11 can be shared by the deposition gas and the cleaning gas, and the process gas for introducing the deposition gas or the cleaning gas, so that the two-in-one CCP and ICP also realize two-in-one on the gas path of the process gas.

[0080] The reaction cavity required by a single small plasma source 100 is much smaller than that of a single process cavity RPS, which can avoid the technical barrier risk and cost increase caused by the use of a large volume reaction cavity.

[0081] Note that the process gas can be suitably determined based on the process employed (e.g., etching, thin film deposition, process chamber cleaning, or thin film cleaning (for the later-described carrier plate B)). For example, in the case of performing the later-described PECVD deposition, the deposition gas is selected from one or more of SiH4, NH3, TMB, H2, PH3, B2H6, CO2, N2O; in the case of performing the later-described cleaning of the film deposited on the process chamber 2000 and / or the film deposited on the carrier plate B, the cleaning gas is selected from one or more of CF3, CHF3, SiCl4, NF3, N2, Ar, He, Ne.

[0082] As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz. Figures 4 to 6 Figure 10 As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz. Figures 11 to 12 Figure 15 As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz.

[0083] As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz. Figures 4 to 7 Figure 10 As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz. Figures 11 to 12 Figure 14 As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz. Figure 15 As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz.

[0084] As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz.

[0085] Figures 5 to 10 As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz. Figure 4 As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz.

[0086] As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz. Figure 10 As shown in FIG. 1, in an example, the upper cover 1 is a reversed funnel shape, facilitating uniform entry of the process gas into each of the through holes 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic, or quartz.As shown in FIG. 1, in an example, the first electrode sheets 41 and the second electrode sheets 42 have the same axial D dimension as the insulating dielectric column 3, so that the first electrode sheets 41 and the second electrode sheets 42 have the same axial D dimension as the insulating dielectric column 3 in forming the tubular capacitance at each of the through holes 31, improving the consistency of the capacitance formed at the through holes 31. For example, the insulating dielectric column 3 can be sintered into shape, so that the first electrode sheets 41 and the second electrode sheets 42 are embedded in the insulating dielectric column 3.​​​​

[0087] like Figure 9 As shown in FIG. 1 , in one example, first electrode sheets 41 of the same polarity are electrically connected together by a first lead 43 , and second electrode sheets 42 of the same polarity are electrically connected together by a second lead 44 . Figure 8 In the figure, the first lead 43 extends radially outward from the innermost first electrode sheet 41, and the second lead 44 extends radially outward from the innermost second electrode sheet 42. The radial outward extension direction of the first lead 43 is opposite to the radial outward extension direction of the second lead 44. When the first lead 43 extends radially outward through the second electrode sheet 42, the second electrode sheet 42 is preferably disconnected as a whole along the axial direction D to avoid the first lead 43. Similarly, when the second lead 44 extends radially outward through the first electrode sheet 41, the first electrode sheet 41 is preferably disconnected as a whole along the axial direction D to avoid the second lead 44. Because the overall disconnection of the first electrode sheet 41 along the axial direction D can ensure the consistency of the size of the capacitor formed in the axial direction D, similarly, because the overall disconnection of the second electrode sheet 42 along the axial direction D can ensure the consistency of the size of the capacitor formed in the axial direction D, in addition, the volume is reduced compared to the electrical connection from the end of the axial direction D that is away from the overall cavity 211, which is conducive to the miniaturization of the plasma source 100. Correspondingly, as shown in FIG8 , the plurality of through holes 31 are arranged in multiple concentric circles. At the disconnection point between the first electrode sheet 41 and the second electrode sheet 42 , the through holes 31 of each circle are separated into two parts, but the parts can be arranged at equal intervals.

[0088] exist Figures 11 to 15 (and combined Figure 4 ), the capacitor electrode sheets 4 include flat first electrode sheets 41 and flat second electrode sheets 42 that are alternately stacked along the axial direction D and separated by the insulating dielectric column 3. Each first electrode sheet 41 has a plurality of first through-holes 411 that coincide with the positions of the plurality of through-holes 31, and each second electrode sheet 42 has a plurality of second through-holes 421 that coincide with the positions of the plurality of through-holes 31. The flat first electrode sheets 41 and flat second electrode sheets 42 that are alternately stacked and separated along the axial direction D and the insulating dielectric column 3 located between adjacent first and second electrode sheets 41 and 42 along the axial direction D form a stacked capacitor, thereby forming a stacked capacitor at each through-hole 31 with the first and second electrode sheets 41 and 42 and the insulating dielectric column 3.

[0089] Similarly, the insulating dielectric column 3 can be sintered, and the first electrode sheet 41 and the second electrode sheet 42 are embedded in the insulating dielectric column 3 .

[0090] like Figure 13 As shown, in one example, the plurality of through holes 31 are arranged in multiple concentric circles. Furthermore, the through holes 31 in each circle may be arranged at equal intervals.

[0091] Similarly, the first electrode sheets 41 of the same polarity are electrically connected together by the first lead 43, and the second electrode sheets 42 of the same polarity are electrically connected together by the second lead 44. Since the flat-plate-shaped first electrode sheets 41 and the flat-plate-shaped second electrode sheets 42 are alternately stacked along the axial direction D and separated by the insulating dielectric column 3, the first electrode sheets 41 of the same polarity can be electrically connected together by the first lead 43 on the same radial side, and the second electrode sheets 42 of the same polarity can be electrically connected together by the second lead 44 on the same radial side. Similarly, the first lead 43 and the second lead 44 extend in radially opposite directions. The first electrode sheet 41, the second electrode sheet 42, and the first lead 43 and the second lead 44 are made of, for example, copper, silver, or silver-plated copper.

[0092] like Figure 4 、 Figures 5 to 6 、 Figures 11 to 12 As shown, the inductor coil 5 is in a spirally wound form. The inductor coil 5 is, for example but not limited to, a copper coil or a silver-plated copper coil.

[0093] like Figure 5 and Figure 11 、 Figure 15 as well as Figure 16 As shown, the first lead 43 and the second lead 44 of the capacitor electrode sheet 4 and the inductor coil 5 are connected in series, thereby allowing capacitive coupling and inductive coupling to act simultaneously under the same circuit drive, avoiding the complexity of control caused by the separate circuit settings of capacitive coupling and inductive coupling. In addition, it also avoids the situation where one of the capacitive coupling and inductive coupling fails due to the separate setting and forms a separate capacitively coupled plasma or a separate inductively coupled plasma. That is, in the plasma source 100 of the present disclosure, capacitive coupling and inductive coupling work simultaneously. If the plasma source 100 does not work, it means that both the capacitive coupling and the inductive coupling are not working, and no subsequent process operations can be performed, leaving it to the operator to check and troubleshoot.

[0094] against Figures 5 to 10 (and combined Figure 4 ) of the first embodiment of the plasma source 100, such as Figure 5 、 Figure 6 and Figure 10As shown, in an example, the plasma source 100 further comprises an upper insulating sheet 6 supported on the end of the insulating medium cylinder 3 adjacent to the upper cover 1 in the axial direction D; the upper insulating sheet 6 has through upper vias 61 corresponding to the plurality of through holes 31. By the provision of the upper insulating sheet 6, the process gas entering via the gas inlet passage 11 is covered from covering the end of the insulating medium cylinder 3 in the axial direction D by the capacitive electrode sheet 4 (specifically, the first electrode sheet 41 and the second electrode sheet 42), and the process gas and the capacitive electrode sheet 4 (specifically, the first electrode sheet 41 and the second electrode sheet 42) are isolated from covering the end of the insulating medium cylinder 3 in the axial direction D by the capacitive electrode sheet 4. Similarly, as shown in Figure 7 and Figure 10 As shown, in an example, the plasma source 100 further comprises a lower insulating sheet 7 supported on the other end of the insulating medium cylinder 3 away from the upper cover 1 in the axial direction D; the lower insulating sheet 7 has through lower vias 71 corresponding to the plurality of through holes 31. By the provision of the lower insulating sheet 7, the plasma in the overall cavity 211 is covered from covering the other end of the insulating medium cylinder 3 in the axial direction D by the capacitive electrode sheet 4 (specifically, the first electrode sheet 41 and the second electrode sheet 42), and the process gas and the capacitive electrode sheet 4 (specifically, the first electrode sheet 41 and the second electrode sheet 42) are isolated from covering the other end of the insulating medium cylinder 3 in the axial direction D by the capacitive electrode sheet 4 (specifically, the first electrode sheet 41 and the second electrode sheet 42), and the capacitive electrode sheet 4 (specifically, the first electrode sheet 41 and the second electrode sheet 42) is prevented from affecting the plasma in the overall cavity 211 by covering the other end of the insulating medium cylinder 3 in the axial direction D. For example, the upper insulating sheet 6 and the lower insulating sheet 7 are made of the same material as the insulating medium cylinder 3. In an example, the insulating shell 2, the insulating medium cylinder 3, the capacitive electrode sheet 4, the upper insulating sheet 6 and the lower insulating sheet 7 are integrally formed, thereby achieving the fixation of the insulating medium cylinder 3, the capacitive electrode sheet 4, the upper insulating sheet 6 and the lower insulating sheet 7 in the insulating shell 2 and the sealing between the insulating medium cylinder 3, the upper insulating sheet 6 and the lower insulating sheet 7 and the insulating shell 2.

[0095] In the second embodiment of the plasma source 100 for Figures 11 to 15 (and in combination with Figure 4 ), similarly, in order to isolate the process gas entering via the gas inlet passage 11 from the capacitive electrode sheet 4 (specifically, the first electrode sheet 41 or the second electrode sheet 42 closest to the gas inlet passage 11 in the axial direction D), and to isolate the plasma in the overall cavity 211 from the capacitive electrode sheet 4 (specifically, the first electrode sheet 41 or the second electrode sheet 42 closest to the overall cavity 211 in the axial direction D), the insulating medium cylinder 3 covers the capacitive electrode sheet 4 at both ends in the axial direction D, as shown in Figure 11 , Figure 12 , Figure 13 and Figure 15In one example, the insulating housing 2, the insulating dielectric column 3, and the capacitor electrode sheet 4 are integrally formed, thereby achieving the fixation of the insulating dielectric column 3 and the capacitor electrode sheet 4 in the insulating housing 2 and the sealing between the insulating dielectric column 3 and the insulating housing 2.

[0096] like Figure 4 、 Figure 5 、 Figure 6 、 Figure 10 as well as Figure 11 、 Figure 12 、 Figure 15 As shown, in one example, the plasma source 100 further includes an inductor coil frame 8. The inductor coil frame 8 is disposed outside the insulating housing 2 and covers at least a portion of the insulating medium column 3 and the entire cavity 211 along the axial direction D. The inductor coil frame 8 is used to fix and support the inductor coil 5. The inductor coil frame 8 can be made of Teflon.

[0097] like Figure 16 As shown, the plasma source 100 further includes a radio frequency power supply 9, which is connected in series with the first lead 43 and the second lead 44 of the capacitor electrode 4 and the inductor 5 and grounded at both ends. Figure 16 In the embodiment, there is one radio frequency power source 9. In an example not shown, there are two radio frequency power sources 9, which are respectively located on opposite sides of the capacitor electrode sheet 4 and the inductor coil 5 connected in series.

[0098] [Ion source cluster]

[0099] Reference Figure 17 and Figure 18 According to the present disclosure, the plasma source cluster 1000 includes a plurality of plasma sources 100 spaced apart from each other and a mounting base 200 as described above. The mounting base 200 has an inner cavity 200a, a plurality of spaced apart upper openings 200b at the top, and a lower opening 200c at the bottom. The insulating shell 2 of each plasma source 100 is mounted on a corresponding upper opening 200b, and the integral cavity 211 of the insulating shell 2 of each plasma source 100 is connected to the inner cavity 200a of the mounting base 200. The lower opening 200c of the mounting base 200 is used to communicate with the inner space 2001 of the process chamber 2000. The process chamber 2000 of the PECVD equipment M described below is used to receive plasma supplied by the plurality of plasma sources 100 of the plasma source cluster 1000 via the mounting base 200 to perform PECVD deposition coating or to clean the film layer deposited in the process chamber 2000 and / or the film layer deposited on the carrier B.

[0100] The various features, effects, and operations of the plasma source 100 can be found in the above description and will not be repeated here.

[0101] The plasma source cluster 1000 according to the present disclosure is used as a basic unit of the PECVD apparatus M to be described later, so that the plasma supplied via the plasma source cluster 1000 into the corresponding region R to be described later is more uniform at each position in the corresponding region R.

[0102] In Figure 17 and Figure 18 , the plurality of plasma sources 100 of the plasma source cluster 1000 are arranged with one plasma source 100 at the center, and four plasma sources 100 radially and axially equidistantly arranged around the center. In alternative examples, the plurality of plasma sources 100 in the plasma source cluster 1000 are arranged in an array, and the specific arrangement can be flexibly set as long as uniform distribution (and thus more uniform plasma supplied into the corresponding region R to be described later at each position in the corresponding region R) is achieved.

[0103] Referring to Figure 18 , the insulating shell 2 of the plasma source 100 is detachably mounted to the corresponding one upper opening 200b.

[0104] As shown in Figure 17 and Figure 18 , in an example, each plasma source cluster 1000 further includes a shielding cover 300; the shielding cover 300 surrounds the plurality of plasma sources 100 and separates the plurality of plasma sources 100 from each other.

[0105] [PECVD apparatus]

[0106] Referring to Figures 19 to 28 and in combination with Figures 4 to 18 , the PECVD apparatus M according to the present disclosure includes a process cavity C, which includes the aforementioned plurality of plasma source clusters 1000 and a process cavity body 2000, and the plurality of plasma source clusters 1000 are arranged on the same outer surface of the process cavity body 2000 with a spacing therebetween. Each plasma source cluster 1000 includes a plurality of plasma sources 100 spaced apart from each other. The entire cavity portion 211 of each plasma source 100 is in communication with the inner space 2001 of the process cavity body 2000; the process cavity body 2000 is used to receive the plasma supplied by the plasma sources 100 of the plurality of plasma source clusters 1000 to perform PECVD deposition film coating or to perform cleaning of the film layer coated by the process cavity body 2000 and / or cleaning of the film layer coated on the carrier B. The various features, effects, and operations of the plasma source 100 can be referred to the foregoing, which will not be repeated here.

[0107] It is noted that the mounting seat 200 of each plasma source cluster 1000 in the PECVD equipment M of the present disclosure can or can not be used, that is, each plasma source 100 in each plasma source cluster 1000 can be directly mounted to the process cavity 2000, and the plurality of plasma sources 100 in each plasma source cluster 1000 can also be indirectly mounted to the process cavity 2000 through the mounting seat 200.

[0108] In the PECVD equipment M according to the present disclosure, by arranging the plurality of plasma source clusters 1000 on the same outer surface of the process cavity 2000 at intervals from each other, and by each plasma source cluster 1000 comprising a plurality of plasma sources 100 spaced apart from each other, the single large plasma source originally combined with the process cavity is divided into a plurality of small plasma source clusters 1000 and the process cavity 2000, and the single gas and plasma passage originally on the top of the process cavity is divided into a plurality of plasma passages (gas is fed from the gas inlet 11 of the plasma source 10 of the plurality of plasma source clusters 1000) formed by the plurality of plasma sources 100 of the plurality of plasma source clusters 1000, while the plurality of small plasma source clusters 1000 are arranged above the process cavity, the uniformity of the deposition film and the uniformity of the cleaning process of the film layer are improved. The PECVD equipment M according to the present disclosure can not only meet the needs of solar cell wafer film coating, but also meet the cleaning requirements of the carrier plate B and the process cavity 2000, effectively reducing the equipment cost and the gas consumption of the process.

[0109] In the PECVD equipment M according to the present disclosure, the plasma amount that can be generated by the original large plasma source coil is divided into a plurality of small plasma source clusters 1000. Compared with a single large plasma source, the plurality of small plasma source clusters 1000 or even the plurality of plasma sources 100 in each plasma source cluster 1000 can control the plasma flow rate individually, thereby controlling the film coating uniformity and cleaning uniformity of the region R described below in the process cavity 2000, improving the film coating reaction rate and the cleaning etching rate, and saving process gas.

[0110] In the PECVD equipment M according to the present disclosure, the original large plasma source is divided into a plurality of small plasma source clusters 1000. If any small plasma source cluster 1000 is damaged, it can be very convenient to disassemble and replace it without the need to disassemble and repair all the plasma source clusters 1000 on the entire process cavity 2000, which is also applicable to the plasma sources 100 in each plasma source cluster 1000.

[0111] In addition, the power of the radio frequency power supply 9 required by a single small plasma source 100 is small, which can avoid the technical barrier risk and cost increase caused by using a large-power radio frequency power supply.

[0112] The reaction cavity required by the single small plasma source 100 is much smaller than the reaction cavity of the RPS of the single process cavity, which can avoid the technical barrier risk and cost increase caused by the use of a large volume reaction cavity.

[0113] As shown in Figures 19 to 25 the same outer surface is the top surface.

[0114] Referring to Figures 19 to 25 and combining Figure 26 and Figure 27 the left figure, a plurality of plasma source clusters 1000 are arranged with one plasma source cluster 1000 at the center, and four plasma source clusters 1000 radially and axially equidistantly arranged around the center. Figures 19 to 25 and combining Figure 26 and Figure 27 the left figure, the areas of the five regions R should be equal or the area of the central region is slightly larger than the areas of the surrounding regions. In an alternative example, a plurality of plasma source clusters 1000 are arranged in an array (refer to the 3x3 array of the middle figure and the 2x2 of the right figure of Figure 27 the areas of the regions R are as equal as possible, and the specific arrangement can be flexibly set as long as uniform distribution is achieved (further achieving more uniform supply to each position in the inner space 2001 of the entire process cavity 2000, and ultimately ensuring the uniformity of the overall deposition plating / film layer cleaning is improved).

[0115] In addition, for a plurality of plasma source clusters 1000, different process parameters can be set for the plasma source clusters 1000 of different regions R to improve the flexibility of the process.

[0116] As shown in Figures 19 to 24 in an example, the process cavity 2000 includes a cavity 2002 and a cover 2003. The cavity 2002 includes a surrounding wall 2004 and a bottom plate 2005, the surrounding wall 2002 forms an annular shape, is open on both sides in the up-down direction D1 and forms a through hole P in the direction transverse to the up-down direction D1, and the surrounding wall 2004 forms the inner space 2001. The cover 2003 is mounted on the top side of the surrounding wall 2004 to close the top side of the surrounding wall 2004, and the cover 2003 is formed with a plurality of mounting holes A, each mounting hole A is used to mount the mounting seat 200 of each plasma source cluster 1000; the bottom plate 2005 is integrated with the surrounding wall 2004 to close the bottom side of the surrounding wall 2004. Figure 24 The plurality of holes of the bottom plate 2005 shown in the middle figure are used to place a heating plate (not shown) driven by a lifting rod (not shown) to heat the substrate B.

[0117] In addition, referring to Figures 22 to 27, the process cavity C further comprises a gas distribution assembly 3000. The gas distribution assembly 3000 is configured to space the plurality of plasma source clusters 1000 apart from each other before the plasma supplied by the plurality of plasma source clusters 1000 enters the inner space 2001 of the process cavity 2000. Thus, the reaction precursors of different plasma source clusters 1000 can be effectively prevented from affecting each other before contacting the substrate S.

[0118] Specifically, as shown in Figure 25 and Figure 26 , in an example, the gas distribution assembly 3000 comprises an alignment plate 3001, a gas distribution plate 3002, and a spacer strip 3003. The alignment plate 3001 is provided with a plurality of alignment holes G, each of which is configured to align with the lower opening 200c of the mounting seat 200 of each plasma source cluster 1000. The gas distribution plate 3002 is uniformly distributed into a plurality of regions R, each of which is provided with a plurality of uniformly distributed gas channels W penetrating in the up-down direction D1, and the gas channels W of each region R are in communication with the corresponding alignment hole G and the inner space 2001 of the process cavity 2000. The spacer strip 3003 is arranged between the alignment plate 3001 and the gas distribution plate 3002 to space the plurality of alignment holes G of the alignment plate 3001 apart and the plurality of alignment holes G of the gas distribution plate 3002 apart.

[0119] As shown in Figure 25 and Figure 26 , in combination with Figure 23 , in an example, the gas channels W of each region R are composed of hollow columns CL located on the upper side of the spacer strip 3003 and perforations V penetrating through the spacer strip 3003.

[0120] As shown in Figures 23 to 25 , in an example, the gas distribution assembly 3000 further comprises a ring plate 3004. The ring plate 3004 surrounds the alignment plate 3001 and the gas distribution plate 3002 and is connected to the process cavity 2000.

[0121] In addition, as shown in Figure 22 and Figure 23 , the gas distribution assembly 3000 further comprises a plurality of insulating washers 3005 and a plurality of sealing rings 3006. Each insulating washer 3005 is installed between the alignment plate 3001 and the mounting seat 200 of each plasma source cluster 1000, and each insulating washer 3005 is in communication with the corresponding alignment hole G and the lower opening 200c of the mounting seat 200 of each plasma source cluster 1000. Each insulating washer 3005 is provided with a sealing ring 3006 between the mounting seat 200 of each plasma source cluster 1000 and between the alignment plate 3001. The material of the insulating washer 3005 is, for example, but not limited to, ceramic or plastic. The material of the sealing ring 3006 is, for example, but not limited to, perfluorinated rubber, high fluorine rubber, or plastic.

[0122] As shown in Figure 28As shown, in one example, the PECVD equipment M further includes a transfer chamber T, a carrier B, and a telescopic robot H. The transfer chamber T is located outside the process chamber C. The transfer chamber T is adjacent to and connected to the process chamber body 2000 of the process chamber C. The transfer chamber T is used to transfer the carrier B. The carrier B is used to support the substrate S to be PECVD-coated. The telescopic robot H is arranged in the transmission chamber T. The telescopic robot H is used for: when depositing the coating, the telescopic robot H holds the carrier B carrying the substrate S to be PECVD-coated and is transmitted through the transmission chamber T, and by telescoping, transports the carrier B carrying the substrate S to be PECVD-coated through the entrance and exit E connected to the through-port P of the transmission chamber T and the process chamber 2000 to the inner space 2001 of the process chamber 2000, and after the substrate S completes the PECVD coating in the inner space 2001 of the process chamber 2000, the carrier B carrying the substrate S that has been PECVD-coated is transported from the process chamber 2000 through the transmission chamber T and the process chamber 2000. The carrier B is transported to the transfer chamber T through the entrance and exit E connected to the through-port P of the process chamber 2000; when the film layer plated on the carrier B is cleaned, the telescopic robot H holds the carrier B that is not carrying the substrate S and is transported through the transfer chamber T and transports the carrier B to the inner space 2001 of the process chamber 2000 through the entrance and exit E connected to the through-port P of the process chamber 2000 through telescopic movement. After the carrier B completes the cleaning of the film layer plated in the inner space 2001 of the process chamber 2000, the carrier B is transported from the process chamber 2000 through the entrance and exit E connected to the through-port P of the process chamber 2000 through telescopic movement.

[0123] Further, if Figure 28 As shown, the PECVD equipment M also includes a loading chamber F; the loading chamber F is used to send the carrier B carrying the substrate S to be PECVD coated into the telescopic robot H of the transmission chamber T.

[0124] The above detailed description is used to describe a number of exemplary embodiments, but this document is not intended to be limited to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein may be combined to form multiple additional combinations that are not shown for the sake of brevity.

Claims

1. A plasma source cluster, characterized in that The plasma source cluster (1000) comprises a plurality of plasma sources (100) spaced apart from each other and a mounting base (200); Each plasma source (100) comprises an upper cover (1), an insulating shell (2), an insulating dielectric column (3), a capacitive electrode sheet (4), and an inductive coil (5); The upper cover (1) is sealingly fixed on the insulating shell (2), and the upper cover (1) has an axial (D) gas inlet channel (11) for passing in process gas of deposition coating gas or cleaning gas and shared by the deposition coating gas and the cleaning gas; The insulating shell (2) has a hollow cavity (21); The insulating dielectric column (3) occupies a position close to the upper cover (1) of the hollow cavity (21) of the insulating shell (2) so that a part of the hollow cavity (21) of the insulating shell (2) away from the upper cover (1) is an empty overall cavity (211) not occupied, and the insulating dielectric column (3) has a plurality of axial (D) through holes (31) spaced apart from each other, and each through hole (31) is communicated with the gas inlet channel (11) and the overall cavity (211); The capacitive electrode sheet (4) is arranged on the insulating dielectric column (3) so that the capacitive electrode sheet (4) forms a capacitor with the insulating dielectric column (3) at each through hole (31), and the capacitor is used for generating a capacitive coupled plasma in the capacitor formed by each through hole (31) from the process gas entering through the gas inlet channel (11), and the capacitive coupled plasma is discharged to the overall cavity (211); The inductive coil (5) is wound outside the insulating shell (2) and corresponds to the overall cavity (211) of the hollow cavity (21) of the insulating shell (2) in position, and the inductive coil (5) is used for inductively coupling the capacitive coupled plasma discharged from the plurality of through holes (31) into the overall cavity (211); The mounting base (200) has an inner cavity (200a), a plurality of spaced apart upper openings (200b) at the top, and a lower opening (200c) at the bottom; The insulating shell (2) of each plasma source (100) is mounted in a corresponding upper opening (200b), and the overall cavity (211) of the insulating shell (2) of each plasma source (100) is communicated with the inner cavity (200a) of the mounting base (200); The lower opening (200c) of the mounting base (200) is used for being communicated with the inner space (2001) of the process chamber (2000), and the process chamber (2000) is used for receiving the plasma supplied by the plurality of plasma sources (100) of the plasma source cluster (1000) to perform PECVD deposition coating or cleaning of the film layer coated by the process chamber (2000) and / or the film layer coated on the carrier plate (B). 2.The plasma source cluster of claim 1, characterized in that The capacitive electrode sheet (4) comprises a first electrode sheet (41) and a second electrode sheet (42) which are alternately sleeved in a radial direction and spaced apart by the insulating dielectric column (3). The plurality of through holes (31) are arranged in concentric multiple circles, the through holes (31) on each circle are located between a corresponding pair of adjacent cylindrical first electrode sheets (41) and second electrode sheets (42) in the radial direction to form tubular capacitors between the first electrode sheets (41) and the second electrode sheets (42) and the insulating medium column (3) at each through hole (31).

3. The plasma source cluster of claim 1, wherein, The capacitor electrode sheets (4) comprise first electrode sheets (41) and second electrode sheets (42) which are alternately stacked in the axial direction (D) and are spaced apart by the insulating medium column (3), each first electrode sheet (41) has a plurality of first through holes (411) which are positionally consistent with the plurality of through holes (31), and each second electrode sheet (42) has a plurality of second through holes (421) which are positionally consistent with the plurality of through holes (31), The first electrode sheets (41) and the second electrode sheets (42) which are alternately stacked in the axial direction (D) and are spaced apart form a laminated capacitor with the insulating medium column (3) located between adjacent first electrode sheets (41) and second electrode sheets (42) in the axial direction (D), and further form a laminated capacitor between the first electrode sheets (41) and the second electrode sheets (42) and the insulating medium column (3) at each through hole (31).

4. The plasma source cluster of claim 2 or 3, wherein, The first electrode sheets (41) of the same polarity are electrically connected together by first lead wires (43), and the second electrode sheets (42) of the same polarity are electrically connected together by second lead wires (44).

5. The plasma source cluster of claim 4, wherein, The first lead wires (43) and the second lead wires (44) of the capacitor electrode sheets (4) and the inductor coil (5) are connected in series.

6. The plasma source cluster of claim 2, wherein, The plasma source (100) further comprises an upper insulating sheet (6), The upper insulating sheet (6) is arranged on the end of the insulating medium column (3) adjacent to the upper cover (1) in the axial direction (D); The upper insulating sheet (6) has upper through holes (61) corresponding to the plurality of through holes (31); The plasma source (100) further comprises a lower insulating sheet (7), The lower insulating sheet (7) is supported on the other end of the insulating medium column (3) away from the upper cover (1) in the axial direction (D); The lower insulating sheet (7) has lower through holes (71) corresponding to the plurality of through holes (31).

7. The plasma source cluster of claim 1, wherein, The plasma source (100) further comprises an inductor coil holder (8); The inductor coil holder (8) is arranged outside the insulating housing (2) and covers at least a portion of the insulating medium column (3) and the entire integral cavity (211) in the axial direction (D), and is used to fix and support the inductor coil (5).

8. The plasma source cluster of claim 5, wherein, The plasma source (100) further comprises a radio frequency power supply (9), The radio frequency power source (9) is connected in series with the first lead (43) and the second lead (44) of the capacitive electrode sheet (4) and the inductive coil (5) and is grounded at both ends.

9. The plasma source cluster of claim 1, wherein, The plurality of plasma sources (100) are arranged in an array.

10. The plasma source cluster of claim 1, wherein, The plasma source cluster (1000) further comprises a shielding cover (300); The shielding cover (300) surrounds and separates the plurality of plasma sources (100) from each other.

11. A PECVD apparatus comprising a process chamber (C), wherein, The process chamber (C) comprises a plurality of plasma source clusters (1000) and a process chamber body (2000); The plurality of plasma source clusters (1000) are arranged on the same outer surface of the process chamber body (2000) and are spaced apart from each other; Each plasma source cluster (1000) comprises a plurality of plasma sources (100) which are spaced apart from each other; Each plasma source (100) comprises an upper cover (1), an insulating housing (2), an insulating dielectric column (3), a capacitive electrode sheet (4), and an inductive coil (5); The upper cover (1) is sealingly fixed on the insulating housing (2), the upper cover (1) has an axial (D) gas inlet channel (11) for passing a process gas of a deposition coating gas or a cleaning gas and for being shared by the deposition coating gas and the cleaning gas; The insulating housing (2) has a hollow cavity (21); The insulating dielectric column (3) occupies a position of the hollow cavity (21) of the insulating housing (2) close to the upper cover (1) so that a part of the hollow cavity (21) of the insulating housing (2) away from the upper cover (1) is an overall cavity (211) which is kept empty and not occupied, the insulating dielectric column (3) has a plurality of axial (D) through holes (31) which are spaced apart from each other, each through hole (31) is communicated with the gas inlet channel (11) and the overall cavity (211); The capacitive electrode sheet (4) is arranged on the insulating dielectric column (3) so that the capacitive electrode sheet (4) forms a capacitor together with the insulating dielectric column (3) at each through hole (31), the capacitor is used for generating a capacitive coupled plasma in each through hole (31) from the process gas entering through the gas inlet channel (11), and the capacitive coupled plasma is discharged into the overall cavity (211); The inductive coil (5) is wound outside the insulating housing (2) and corresponds in position to the overall cavity (211) of the hollow cavity (21) of the insulating housing (2), the inductive coil (5) is used for inductively coupling the capacitive coupled plasma discharged from the plurality of through holes (31) into the overall cavity (211); The overall cavity (211) of each plasma source (100) is communicated with an inner space (2001) of the process chamber body (2000). The process cavity (2000) is used to receive the plasma supplied by a plurality of plasma source clusters (1000) of a plasma source (100) to perform PECVD deposition coating or to perform cleaning of the film layer coated by the process cavity (2000) and / or the film layer coated on the carrier plate (B).

12. The PECVD device according to claim 11, characterized in that, The capacitive electrode sheets (4) comprise first electrode sheets (41) and second electrode sheets (42) which are alternately sleeved in the radial direction and are spaced apart by the insulating medium columns (3); The plurality of through holes (31) are arranged in concentric multiple circles, and the through holes (31) on each circle are located between a corresponding pair of adjacent first electrode sheets (41) and second electrode sheets (42) in the radial direction, so that the first electrode sheets (41) and the second electrode sheets (42) form tubular capacitors with the insulating medium columns (3) at each through hole (31).

13. The PECVD device according to claim 11, characterized in that, The capacitive electrode sheets (4) comprise first electrode sheets (41) and second electrode sheets (42) which are alternately stacked in the axial direction (D) and are spaced apart by the insulating medium columns (3), each first electrode sheet (41) has a plurality of first through holes (411) which are positionally consistent with the plurality of through holes (31), and each second electrode sheet (42) has a plurality of second through holes (421) which are positionally consistent with the plurality of through holes (31), The first electrode sheets (41) and the second electrode sheets (42) which are alternately stacked and spaced apart in the axial direction (D) form a laminated capacitor with the insulating medium columns (3) located between adjacent first electrode sheets (41) and second electrode sheets (42) in the axial direction (D), and further form a laminated capacitor with the insulating medium columns (3) at each through hole (31).

14. The PECVD device according to claim 12 or 13, characterized in that, The first electrode sheets (41) of the same polarity are electrically connected together by first lead lines (43), and the second electrode sheets (42) of the same polarity are electrically connected together by second lead lines (44).

15. The PECVD device according to claim 14, characterized in that, The first lead lines (43) and the second lead lines (44) of the capacitive electrode sheets (4) and the inductive coil (5) are connected in series.

16. The PECVD device according to claim 12, characterized in that, The plasma source (100) further comprises an upper insulating sheet (6), The upper insulating sheet (6) is arranged on the end of the insulating medium columns (3) adjacent to the upper cover (1) in the axial direction (D); The upper insulating sheet (6) has upper through holes (61) corresponding to the plurality of through holes (31); The plasma source (100) further comprises a lower insulating sheet (7), The lower insulating sheet (7) is supported on the other end of the insulating medium columns (3) away from the upper cover (1) in the axial direction (D); The lower insulating sheet (7) has lower through holes (71) corresponding to the plurality of through holes (31).

17. The PECVD apparatus of claim 11, wherein, the plasma source (100) further comprises an inductor coil holder (8); the inductor coil holder (8) is sleeved outside the insulating shell (2) and covers at least a portion of the insulating medium column (3) and the entire integral cavity (211) in the axial direction (D), and the inductor coil holder (8) is used for fixing and supporting the inductor coil (5).

18. The PECVD apparatus of claim 15, wherein, the plasma source (100) further comprises a radio frequency power source (9), the radio frequency power source (9) is connected in series with the first lead wire (43) and the second lead wire (44) of the capacitive electrode sheet (4) and the inductor coil (5) and is grounded at both ends.

19. The PECVD apparatus of claim 11, wherein, the plurality of plasma sources (100) in each plasma source cluster (1000) are arranged in an array.

20. The PECVD apparatus of claim 11, wherein, each plasma source cluster (1000) further comprises a mounting seat (200) having an inner cavity (200a), a plurality of spaced-apart upper openings (200b) at the top, and a lower opening (200c) at the bottom; the insulating shell (2) of each plasma source (100) is mounted in a corresponding upper opening (200b), and the integral cavity (211) of the insulating shell (2) of each plasma source (100) is in communication with the inner cavity (200a) of the mounting seat (200), the lower opening (200c) of the mounting seat (200) is in communication with the inner space (2001) of the process cavity (2000).

21. The PECVD apparatus of claim 11, wherein, each plasma source cluster (1000) further comprises a shielding cover (300); the shielding cover (300) surrounds and separates the plurality of plasma sources (100) from each other.

22. The PECVD apparatus of claim 11, wherein, the process cavity (C) further comprises a gas distribution assembly (3000); the gas distribution assembly (3000) is used for separating the plurality of plasma source clusters (1000) from each other before the plasma supplied by the plurality of plasma source clusters (1000) enters the inner space (2001) of the process cavity (2000).

23. The PECVD apparatus of claim 22, wherein, the gas distribution assembly (3000) comprises an alignment plate (3001), a gas distribution plate (3002), and a spacing strip (3003); the alignment plate (3001) is provided with a plurality of alignment holes (G), each alignment hole (G) being used for aligning with the lower opening (200c) of the mounting seat (200) of each plasma source cluster (1000); the gas distribution plate (3002) is uniformly distributed into a plurality of regions (R), each region (R) being provided with a plurality of uniformly distributed gas channels (W) penetrating in the up-down direction (D1), and the gas channels (W) of each region (R) are in communication with a corresponding alignment hole (G) and the inner space (2001) of the process cavity (2000). A spacer bar (3003) is provided between the alignment plate (3001) and the air distribution plate (3002) to space the plurality of alignment holes (G) of the alignment plate (3001) and to space the plurality of alignment holes (G) of the air distribution plate (3002).

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