Forward-mounted LED chip and manufacturing method thereof, flip-mounted LED chip and manufacturing method thereof

Abstract

The invention provides a normally-mounted LED chip. The normally-mounted LED chip comprises a substrate; a first LED device structure; the first LED device structure comprises an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer and a transparent conductive layer which are sequentially stacked in the direction away from the substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer and the transparent conductive layer are sequentially stacked on the second step; a first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer; a color conversion layer; the color conversion layers are distributed on the side, close to the substrate, of the N-type epitaxial layer, the side wall of the first LED device structure and the surface of the transparent conductive layer, and the first electrode and the second electrode are exposed. According to the technical scheme, the problem of light leakage of the LED chip can be solved, and higher excitation efficiency is achieved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor devices, and in particular to a front-mounted LED chip and a manufacturing method thereof, and a flip-chip LED chip and a manufacturing method thereof. Background Art

[0002] At present, red light LED chips are a pain point in the industry, especially as product size decreases. Due to the size effect of the material, the brightness of GaAS or PAlGaInP materials will decrease significantly as the chip size decreases, and they cannot meet the commercialization needs of MicroLED chips. InGaN red light technology is easily decomposed during high-temperature growth, resulting in low overall efficiency and difficult to control yield.

[0003] Therefore, how to improve the reliability and excitation efficiency of LED chip products, and how to solve the light leakage problem of LED chip products are industry pain points that technical personnel in this field need to overcome. Summary of the invention

[0004] The present invention provides a front mounted LED chip and a manufacturing method thereof, and a flip mounted LED chip and a manufacturing method thereof, so as to solve the problem of light leakage of the LED chip and improve the excitation efficiency.

[0005] According to a first aspect of the present invention, there is provided a front mounted LED chip, comprising:

[0006] substrate;

[0007] A first LED device structure; the first LED device structure comprises: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer and a transparent conductive layer stacked in sequence in a direction away from the substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer and the transparent conductive layer are stacked in sequence on the second step;

[0008] A first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer;

[0009] The color conversion layer is distributed on a side of the N-type epitaxial layer close to the substrate, a side wall of the first LED device structure and a surface of the transparent conductive layer, and exposes the first electrode and the second electrode.

[0010] The thickness of the color conversion layer is greater than 4 um.

[0011] Optionally, the upright LED chip further includes: a first protective layer; the first protective layer covers the color conversion layer on the side wall of the first LED device structure and the surface of the color conversion layer on the surface of the transparent conductive layer.

[0012] The thickness of the first protective layer is 10-5000A.

[0013] Optionally, the color conversion layer is a red color conversion layer.

[0014] Optionally, a longitudinal section of the color conversion layer distributed on a side of the N-type epitaxial layer close to the substrate is a triangle.

[0015] Optionally, the material of the first protective layer is: any one of aluminum oxide, silicon nitride, silicon oxide or a combination thereof. According to the second aspect of the present invention, a flip-chip LED chip is provided, and the first LED device structure comprises: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer and a transparent conductive layer stacked in sequence in a direction away from the substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer and the transparent conductive layer are stacked in sequence on the second step;

[0016] The first color conversion layer and the first reflector layer; the first reflector layer is formed on the surface of the transparent conductive layer; the first color conversion layer represents the color conversion layer distributed on the side of the N-type epitaxial layer close to the substrate;

[0017] A first electrode and a second electrode; the second electrode is formed on the surface of the first reflector layer; the first electrode is formed on the first step of the N-type epitaxial layer.

[0018] Optionally, the flip-chip LED chip further includes: a second protective layer; the second protective layer covers the side walls of the first LED device structure and the upper portion of the first reflector layer.

[0019] Optionally, the flip-chip LED chip further includes: a second color conversion layer; the second color conversion layer is formed on the side wall of the first LED device structure.

[0020] Optionally, the second protective layer covers a surface of the second color conversion layer and a surface of the first reflector layer.

[0021] According to a third aspect of the present invention, there is provided a method for manufacturing a front-mounted LED chip, which is used to manufacture the front-mounted LED chip according to any one of the first aspects of the present invention, comprising:

[0022] Providing a substrate as described above;

[0023] forming a plurality of the first LED device structures on the substrate;

[0024] forming the first electrode and the second electrode;

[0025] The color conversion layer is formed; the color conversion layer is distributed on a side of the N-type epitaxial layer close to the substrate and the side wall of the first LED device structure, and the surface of the transparent conductive layer, and the first electrode and the second electrode are exposed.

[0026] Optionally, after forming the color conversion layer, the method further includes: forming the first protective layer; and the first protective layer covers the surface of the color conversion layer.

[0027] Optionally, forming a plurality of the first LED device structures on the substrate specifically includes:

[0028] forming the N-type epitaxial layer, the quantum well light-emitting layer and the N-type epitaxial layer in sequence on the substrate in a direction away from the substrate;

[0029] Forming the N-type epitaxial layer with a step structure; the step structure includes the first step and the second step;

[0030] forming a first channel; wherein the first channel is formed between a plurality of the first LED device structures;

[0031] The transparent conductive layer is formed; the transparent conductive layer is formed on the surface of the P-type epitaxial layer.

[0032] Optionally, while forming the N-type epitaxial layer, the quantum well light-emitting layer and the N-type epitaxial layer in sequence on the substrate in a direction away from the substrate, it also includes: forming a sacrificial layer; the sacrificial layer is distributed on the surface of the substrate; wherein the longitudinal section of the sacrificial layer is a polygon.

[0033] Optionally, after forming the first channel, the method further includes:

[0034] The sacrificial layer is removed to form a first cavity; wherein the color conversion layer distributed on a side of the N-type epitaxial layer close to the substrate is filled in the first cavity.

[0035] Optionally, the color conversion layer is formed by immersion or spin coating.

[0036] Optionally, photolithography or plasma etching is used to form the first channel.

[0037] Optionally, when removing the sacrificial layer, a wet etching method or a dry etching method is adopted.

[0038] Optionally, the material of the first protective layer is aluminum oxide, silicon nitride, silicon oxide, or a combination thereof. Optionally, the material of the sacrificial layer is a high temperature resistant dielectric material.

[0039] According to a fourth aspect of the present invention, there is provided a method for manufacturing a flip-chip LED chip, which is used to manufacture the flip-chip LED chip according to any one of the second aspects of the present invention, comprising:

[0040] Providing a substrate as described above;

[0041] forming a plurality of the first LED device structures and the first reflector layer on the substrate; the first reflector layer is formed on the surface of the transparent conductive layer;

[0042] The first electrode and the second electrode are formed; the second electrode is formed on the surface of the first reflector layer; the first electrode is formed on the first step of the N-type epitaxial layer;

[0043] The first color conversion layer is formed; the first color conversion layer is formed on a side of the N-type epitaxial layer close to the substrate.

[0044] Optionally, after forming the first color conversion layer, the method further includes:

[0045] The second protection layer is formed; the second protection layer covers the side wall of the first LED device structure and the surface of the first reflector layer.

[0046] Optionally, forming the first color conversion layer further includes:

[0047] A second color conversion layer is formed; the second color conversion layer is formed on the side wall of the first LED device structure.

[0048] Optionally, the second protective layer covers a surface of the second color conversion layer and a surface of the first reflector layer.

[0049] According to a fifth aspect of the present invention, there is provided an electronic device comprising the face-up LED chip described in any one of the first aspect of the present invention, or / and the flip-chip LED chip described in any one of the second aspect of the present invention.

[0050] According to the sixth aspect of the present invention, a method for manufacturing an electronic device is provided, comprising the method for manufacturing a face-up LED chip as described in any one of the third aspect of the present invention, or / and the method for manufacturing a flip-chip LED chip as described in any one of the fourth aspect of the present invention.

[0051] The present invention provides a forward-mounted LED chip. By setting a color conversion layer, the color conversion layer is distributed on the side of the N-type epitaxial layer close to the substrate, the side wall of the first LED device structure and the surface of the transparent conductive layer; the forward-mounted LED chip can achieve 360° full coverage of the first LED device structure by the color conversion layer, thereby solving the light leakage problem of the forward-mounted LED chip. Furthermore, due to the setting of the 360° full coverage color conversion layer, higher excitation efficiency can be achieved.

[0052] Furthermore, the present invention provides a flip-chip LED chip, which solves the light leakage problem of the flip-chip LED chip by using a first reflector layer in combination with a first color conversion layer, because the first color conversion layer is distributed on the side of the N-type epitaxial layer close to the substrate. Furthermore, due to the setting of the first color conversion layer, a higher excitation efficiency can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0054] Figure 1 This is a schematic diagram of the structure of a front-mounted LED chip provided by an embodiment of the present invention;

[0055] Figure 2 It is a structural schematic diagram of a flip-chip LED chip provided by a specific embodiment of the present invention;

[0056] Figure 3 is a schematic structural diagram of a flip-chip LED chip provided by another specific embodiment of the present invention;

[0057] Figure 4 It is a schematic flow chart of a method for manufacturing a front-mounted LED chip provided by an embodiment of the present invention;

[0058] Figure 5 It is a schematic flow chart of a method for manufacturing a flip-chip LED chip provided by one embodiment of the present invention;

[0059] Figure 6 The structure diagram of different process stages of manufacturing a front-mounted or flip-mounted LED chip according to an embodiment of the present invention is shown in FIG. Figure 1 ;

[0060] Figure 7-8 It is a schematic diagram of the structure of different process stages of manufacturing a front-mounted LED chip according to a manufacturing method of the front-mounted LED chip provided by an embodiment of the present invention;

[0061] Figure 9-10 It is a structural schematic diagram of different process stages of a method for manufacturing a flip-chip LED chip provided by a specific embodiment of the present invention;

[0062] Figure 11-12 It is a structural schematic diagram of different process stages of a method for manufacturing a flip-chip LED chip provided by another specific embodiment of the present invention;

[0063] Description of reference numerals:

[0064] 101-substrate;

[0065] 102-N type epitaxial layer;

[0066] 103- quantum well light emitting layer;

[0067] 104-P type epitaxial layer;

[0068] 105-sacrificial layer;

[0069] 106-transparent conductive layer;

[0070] 107- a first electrode;

[0071] 108- a second electrode;

[0072] 109-color conversion layer;

[0073] 110- first protective layer;

[0074] 111- second protective layer;

[0075] 112-first color conversion layer;

[0076] 113-first reflector layer;

[0077] 114 - Second color conversion layer. DETAILED DESCRIPTION

[0078] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0079] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0080] At present, red light LED chips are a pain point in the industry. Due to the size effect of the material, as the size of the product material decreases, the brightness of the LED chip product decreases significantly. For example, when blue light is converted to red light, the unwrapped surface of the LED device will cause blue light to leak sideways, making the light color emitted by the device impure. Moreover, InGaN red light technology is easy to decompose during high-temperature growth, resulting in low overall conversion efficiency and difficult to control yield. It cannot meet the commercialization needs of MicroLED chips.

[0081] In view of this, the inventors of the present application discovered through repeated experiments that for a flip-chip LED structure, by filling quantum dots at the bottom of the N-type epitaxial layer (GaN material), and for a face-mounted LED, the quantum dots fully wrap the GaN material 360 degrees, a higher excitation efficiency can be achieved and the problem of light leakage in the product can be solved.

[0082] The technical solution of the present invention is described in detail with specific embodiments below. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0083] Please refer to Figure 1-Figure 12 According to an embodiment of the present invention, a front-mounted LED chip is provided, comprising:

[0084] Substrate 101; the substrate 101 may be a sapphire substrate 101, a silicon substrate 101, a silicon carbide substrate 101 or a diamond substrate 101, preferably a sapphire growth substrate 101;

[0085] A first LED device structure; the first LED device structure comprises: an N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104 and a transparent conductive layer 106 stacked in sequence in a direction away from the substrate 101; wherein the N-type epitaxial layer 102 comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer 103, the P-type epitaxial layer 104 and the transparent conductive layer 106 are stacked in sequence on the second step; specifically, the material of the P-type epitaxial layer 104 is p-GaN; the material of the N-type epitaxial layer 102 is: n-GaN;

[0086] A first electrode 107 and a second electrode 108; the first electrode 107 is formed on the first step; the second electrode 108 is formed on the surface of the transparent conductive layer 106;

[0087] The color conversion layer 109 is distributed on the side of the N-type epitaxial layer 102 close to the substrate 101, the side wall of the first LED device structure and the surface of the transparent conductive layer 106, and exposes the first electrode 107 and the second electrode 108; the structure of the upright LED chip is as follows Figure 1 As shown;

[0088] The first electrode 107 represents an N electrode, and the second electrode 108 represents a P electrode.

[0089] The present invention provides a forward-mounted LED chip. By setting a color conversion layer, the color conversion layer is distributed on the side of the N-type epitaxial layer close to the substrate, the side wall of the first LED device structure, and the surface of the transparent conductive layer; the forward-mounted LED chip realizes 360° full wrapping of the first LED device structure by the color conversion layer, thereby solving the light leakage problem of the forward-mounted LED chip. Furthermore, since a 360° full wrapping color conversion layer is set, the formed device is surrounded by the color conversion layer on all sides. In any direction, the light emitted by the chip first excites the color conversion layer and then emits white light, green light or red light of the corresponding color, thereby achieving a higher excitation efficiency. At the same time, the bottom color conversion layer realizes natural water-oxygen isolation.

[0090] In one embodiment, the front-mounted LED chip further includes: a first protective layer 110; the first protective layer 110 covers the color conversion layer 109 on the side wall of the first LED device structure and the surface of the color conversion layer 109 on the surface of the transparent conductive layer 106. In a specific example, the material of the first protective layer 110 is: any one of aluminum oxide, silicon nitride, silicon oxide or a combination thereof.

[0091] The first protective layer 110 functions to isolate water and oxygen and protect the color conversion layer 109 that is exposed and distributed on the sidewall of the first LED device structure and the surface of the transparent conductive layer 106 .

[0092] In one embodiment, the color conversion layer 109 is a red color conversion layer, a yellow color conversion layer or a green color conversion layer.

[0093] Among them, since the color conversion layer 109 is distributed on the side of the N-type epitaxial layer 102 close to the substrate 101, the side wall of the first LED device structure and the surface of the transparent conductive layer 106, the upright LED chip can achieve 360° full wrapping of the first LED device structure by the color conversion layer 109, thereby achieving higher excitation efficiency and solving the problem of product light leakage.

[0094] At present, red light LED chips are a pain point in the industry. Due to the size effect of the material, as the size of the product material decreases, the brightness of the LED chip product decreases significantly. Moreover, InGaN red light technology is easily decomposed during high-temperature growth, resulting in low overall conversion efficiency and difficult to control yield. It cannot meet the commercialization needs of MicroLED chips.

[0095] In one embodiment of the present invention, it is particularly proposed that the color conversion layer 109 is a red color conversion layer 109 .

[0096] Among them, in the technical solution provided in this embodiment, since the red conversion layer 109 is distributed on the side of the N-type epitaxial layer 102 close to the substrate 101, the side wall of the first LED device structure and the surface of the transparent conductive layer 106; the upright LED chip can achieve 360° full wrapping of the first LED device structure by the red color conversion layer 109, which solves the problem of red light leakage of LED chip products and achieves higher red light excitation efficiency.

[0097] In other implementations, the color conversion layer 109 may also be a yellow color conversion layer 109 or a red color conversion layer 109. The light leakage problem of yellow light or green light of LED chip products is solved respectively, and higher excitation efficiency of yellow light or green light is achieved.

[0098] In one embodiment, the longitudinal section of the color conversion layer 109 distributed on the side of the N-type epitaxial layer 102 close to the substrate 101 is a triangle or any other shape.

[0099] In one embodiment, the longitudinal section of the color conversion layer 109 distributed on the side of the N-type epitaxial layer 102 close to the substrate 101 is a triangle;

[0100] When the longitudinal section of the color conversion layer 109 is a triangular structure, it can provide support for the device in a hollow state during the manufacturing process, thereby ensuring smooth manufacturing process.

[0101] In one implementation, the longitudinal section of the color conversion layer 109 distributed on a side of the N-type epitaxial layer 102 close to the substrate 101 is in other shapes.

[0102] According to an embodiment of the present invention, there is also provided a flip-chip LED chip, comprising:

[0103] A first LED device structure, comprising: an N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104 and a transparent conductive layer 106 stacked in sequence in a direction away from the substrate; wherein the N-type epitaxial layer 102 comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer 103, the P-type epitaxial layer 104 and the transparent conductive layer 106 are stacked in sequence on the second step; the first color conversion layer 112 and the first reflector layer 113; the first reflector layer 113 is formed on the surface of the transparent conductive layer 106; the first color conversion layer 112 represents a color conversion layer 109 distributed on a side of the N-type epitaxial layer 102 close to the substrate 101; the first reflector layer is used to reflect the light beam to the light-emitting surface of the flip-chip LED chip;

[0104] The first electrode 107 and the second electrode 108; the second electrode 108 is formed on the surface of the first reflector layer 113; the first electrode 107 is formed on the first step of the N-type epitaxial layer 102. The specific structure of the flip-chip LED chip is as follows Figure 2 or Figure 3 As shown;

[0105] A flip-chip LED chip provided by the present invention solves the light leakage problem of the flip-chip LED chip by using a first reflector layer in combination with a first color conversion layer, because the first color conversion layer is distributed on a side of the N-type epitaxial layer close to the substrate. Furthermore, due to the provision of the first color conversion layer, a higher excitation efficiency can be achieved.

[0106] In one specific embodiment, the flip-chip LED chip only includes the first color conversion layer; in another specific embodiment; the structures of the two flip-chip LED chips are described in detail below:

[0107] In a first specific embodiment, the flip-chip LED chip only includes the first color conversion layer, such as Figure 2 As shown; the structure of the flip-chip LED chip is specifically as follows:

[0108] In one embodiment, the flip-chip LED chip further includes: a second protective layer 111 ; the second protective layer 111 covers the sidewalls of the first LED device structure and the upper portion of the first reflector layer 113 .

[0109] The second protective layer 111 functions to isolate water and oxygen, protect the side walls of the first LED device structure that are exposed to the outside, and protect the surface of the transparent conductive layer 106 .

[0110] In another embodiment, the structure of the flip-chip LED chip is as follows: the flip-chip LED chip includes not only a first color conversion layer 112, but also a second color conversion layer 114; the second color conversion layer 114 is formed on the side wall of the first LED device structure; Figure 3 As shown;

[0111] Among them, the technical solution provided in this embodiment not only forms a second color conversion layer 114 on the side of the bottom N-type epitaxial layer 102 close to the substrate 101, but also on the side wall of the first LED device structure, thereby achieving higher color conversion efficiency and higher light leakage prevention effect.

[0112] Since the flip-chip LED chip includes the first reflector layer 113 , the light beam can be reflected back, and therefore, the color conversion layer 109 does not need to be disposed on the surface of the first reflector layer 113 .

[0113] In one embodiment, the second protection layer 111 covers the surface of the second color conversion layer 114 and the surface of the first reflector layer 113 .

[0114] The second protective layer 111 functions to isolate water and oxygen, protect the second conversion layer exposed to the outside and distributed on the side wall of the first LED device structure, and protect the surface of the transparent conductive layer 106 .

[0115] In other specific examples, the first LED device structure further includes a buffer layer; the buffer layer is formed between the substrate and the N-type epitaxial layer.

[0116] Secondly, according to an embodiment of the present invention, a method for manufacturing a front-mounted LED chip is also provided, which is used to manufacture the front-mounted LED chip described in any of the above embodiments of the present invention. The flow chart of the method for manufacturing the front-mounted LED chip is as follows: Figure 4 As shown, the production method includes:

[0117] S11: providing the substrate 101;

[0118] S12: forming a plurality of the first LED device structures on the substrate 101;

[0119] S13: forming the first electrode 107 and the second electrode 108; Figure 7 As shown;

[0120] S14: forming the color conversion layer 109; the color conversion layer 109 is distributed on the side of the N-type epitaxial layer 102 close to the substrate 101 and the side wall of the first LED device structure, and the surface of the transparent conductive layer 106, and the first electrode 107 and the second electrode 108 are exposed. Figure 8 The device structure shown.

[0121] The present invention provides a method for manufacturing a front-mounted LED chip, which solves the light leakage problem of the front-mounted LED chip by providing a color conversion layer. Furthermore, due to the provision of a 360° fully wrapped color conversion layer, a higher excitation efficiency can be achieved.

[0122] In one embodiment, the color conversion layer 109 is formed by immersion or spin coating.

[0123] In one embodiment, after forming the color conversion layer 109, the method further includes: forming the first protective layer 110; the first protective layer 110 covers the surface of the color conversion layer 109; the device structure after forming the first protective layer 110 can refer to Figure 8 In a specific example, the material of the first protection layer 110 is aluminum oxide, silicon nitride, silicon oxide or a combination thereof.

[0124] In one embodiment, step S12, forming a plurality of the first LED device structures on the substrate 101 specifically includes:

[0125] S121: forming the N-type epitaxial layer 102, the quantum well light-emitting layer 103 and the N-type epitaxial layer 102 in sequence on the substrate 101 in a direction away from the substrate 101; see Figure 6 The device structure shown;

[0126] S122: forming the N-type epitaxial layer 102 having a step structure; the step structure includes the first step and the second step; when forming the N-type epitaxial layer 102 having the step structure, photolithography and plasma etching are adopted;

[0127] S123: forming a first channel; the first channel is formed between the first LED device structures; in one embodiment, the first channel is formed by photolithography or plasma etching; when the first channel is formed by photolithography or plasma etching, the N-type epitaxial layer 102 needs to be etched until the surface of the substrate 101; the first channel is used as an etching channel for subsequent removal of the sacrificial layer 105;

[0128] S124: forming the transparent conductive layer 106; the transparent conductive layer 106 is formed on the surface of the P-type epitaxial layer 104; see Figure 7 The device structure shown.

[0129] In one embodiment, step S121, while sequentially forming the N-type epitaxial layer 102, the quantum well light-emitting layer 103 and the N-type epitaxial layer 102 on the substrate 101 in a direction away from the substrate 101, also includes: forming a sacrificial layer 105; the sacrificial layer 105 is distributed on the surface of the substrate 101; wherein the longitudinal section of the sacrificial layer 105 is a polygon or other arbitrary shape; the material of the sacrificial layer 105 is a high temperature resistant dielectric material; in a specific example, silicon oxide or silicon nitride; the device structure after forming the sacrificial layer 105 is as follows Figure 6 shown.

[0130] In one embodiment, after forming the first channel, step S123 further includes:

[0131] The sacrificial layer 105 is removed to form a first cavity; the device structure after the first cavity is formed is as follows Figure 7 As shown; wherein, the color conversion layer 109 distributed on the side of the N-type epitaxial layer 102 close to the substrate 101 formed in the subsequent step S14 is filled in the first cavity.

[0132] In one embodiment, the sacrificial layer 105 is removed by wet etching or dry etching.

[0133] Step S14, after forming the color conversion layer 109, further includes: partitioning the substrate 101 to form a plurality of upright LED chips; the device structure after the partition is as follows: Figure 8 shown.

[0134] Again, according to an embodiment of the present invention, a method for manufacturing a flip-chip LED chip is provided, which is used to manufacture the flip-chip LED chip described in any of the aforementioned embodiments of the present invention. The process flow diagram of the manufacturing method is shown in FIG. Figure 5 As shown, the production method includes:

[0135] S21: providing the substrate 101;

[0136] S22: forming a plurality of the first LED device structures and the first reflector layer 113 on the substrate 101; the first reflector layer 113 is formed on the surface of the transparent conductive layer 106;

[0137] S23: forming the first electrode 107 and the second electrode 108; the second electrode 108 is formed on the surface of the first reflector layer 113; the first electrode 107 is formed on the first step of the N-type epitaxial layer 102;

[0138] S24: forming the first color conversion layer 112; the first color conversion layer 112 is formed on a side of the N-type epitaxial layer 102 close to the substrate 101. Fig. 9 or Fig.11 shown.

[0139] Furthermore, the present invention provides a method for manufacturing a flip-chip LED chip, which solves the light leakage problem of the flip-chip LED chip by using a first reflector layer in combination with a first color conversion layer. Furthermore, due to the provision of the first color conversion layer, a higher excitation efficiency can be achieved.

[0140] Step S22, forming a plurality of the first LED device structures on the substrate 101. The specific steps are as described in the previous part of the present application, with the only difference being that before forming the first electrode 107 and the second electrode 108, a first reflector layer 113 needs to be formed on the surface of the transparent conductive layer 106. The other steps are the same as those described in the previous part, and the present application will not repeat them here.

[0141] In one embodiment, after forming the first color conversion layer 112, step S24 further includes:

[0142] The second protective layer 111 is formed; the second protective layer 111 covers the side wall of the first LED device structure and the surface of the first reflector layer 113; thereby forming the flip-chip LED chip of the first structure mentioned above.

[0143] In order to achieve better color conversion efficiency and better light leakage prevention effect, in one embodiment, in step S24: forming the first color conversion layer 112 also includes:

[0144] A second color conversion layer 114 is formed; the second color conversion layer 114 is formed on the sidewall of the first LED device structure.

[0145] In one embodiment, the second protection layer 111 covers a surface of the second color conversion layer 114 and a surface of the first reflector layer 113 .

[0146] The thickness of the color conversion layer 109 in the flip-chip LED chip structure or the face-mounted LED chip structure provided by the present invention is greater than 4 um; the thickness of the protective layer is greater than 10-5000 Å.

[0147] Step S24, forming the first color conversion layer 112 (such as Figure 8As shown), or after simultaneously forming the first color conversion layer 112 and the second color conversion layer 114, the method further includes: isolating the substrate 101 to form a plurality of flip-chip LED chips, and the device structure after the isolation is as shown Fig.10 As shown; In the second specific embodiment, the device structure after the partition is as follows Fig.12 As shown;

[0148] In addition, according to an embodiment of the present invention, there is also provided an electronic device, comprising the face-up LED chip described in any one of the aforementioned embodiments of the present invention, or / and the flip-down LED chip described in any one of the aforementioned embodiments of the present invention.

[0149] Finally, according to one embodiment of the present invention, a method for manufacturing an electronic device is also provided, including the method for manufacturing the upright LED chip described in any one of the aforementioned embodiments of the present invention, or / and the method for manufacturing the flip-chip LED chip described in any one of the aforementioned embodiments of the present invention.

[0150] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A front mounted LED chip, characterized in that: include: substrate; A first LED device structure; The first LED device structure comprises: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer and a transparent conductive layer stacked in sequence in a direction away from the substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer and the transparent conductive layer are stacked in sequence on the second step; A first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer; The color conversion layer is distributed on a side of the N-type epitaxial layer close to the substrate, a side wall of the first LED device structure and a surface of the transparent conductive layer, and exposes the first electrode and the second electrode.

2. The front-mounted LED chip according to claim 1, characterized in that: The thickness of the color conversion layer is greater than 4 um.

3. The front-mounted LED chip according to claim 2, characterized in that: The upright LED chip further comprises: a first protective layer; the first protective layer covers the color conversion layer on the side wall of the first LED device structure and the surface of the color conversion layer on the surface of the transparent conductive layer.

4. The front-mounted LED chip according to claim 3, characterized in that: The thickness of the first protective layer is 10-5000A.

5. The front-mounted LED chip according to claim 4, characterized in that: The color conversion layer is a red color conversion layer.

6. The front-mounted LED chip according to claim 5, characterized in that: The longitudinal section of the color conversion layer distributed on a side of the N-type epitaxial layer close to the substrate is a triangle.

7. The front-mounted LED chip according to claim 6, characterized in that: The material of the first protective layer is: any one of aluminum oxide, silicon nitride, silicon oxide, or a combination thereof.

8. A flip-chip LED chip, characterized in that: include: A first LED device structure, comprising: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer and a transparent conductive layer stacked in sequence in a direction away from the substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer and the transparent conductive layer are stacked in sequence on the second step; A first color conversion layer and a first reflector layer; the first reflector layer is formed on the surface of the transparent conductive layer; the first color conversion layer represents a color conversion layer distributed on a side of the N-type epitaxial layer close to the substrate; A first electrode and a second electrode; the second electrode is formed on the surface of the first reflector layer; the first electrode is formed on the first step of the N-type epitaxial layer.

9. The flip-chip LED chip according to claim 8, characterized in that: The flip-chip LED chip further includes: a second protective layer; the second protective layer covers the sidewalls of the first LED device structure and the upper portion of the first reflector layer.

10. The flip-chip LED chip according to claim 9, characterized in that: The flip-chip LED chip further includes: a second color conversion layer; the second color conversion layer is formed on the side wall of the first LED device structure.

11. The flip-chip LED chip according to claim 10, characterized in that: The second protection layer covers a surface of the second color conversion layer and a surface of the first reflector layer.

12. A method for manufacturing a front mounted LED chip, used for manufacturing the front mounted LED chip according to any one of claims 1 to 7, characterized in that: include: Providing a substrate as described above; forming a plurality of the first LED device structures on the substrate; forming the first electrode and the second electrode; forming the color conversion layer; The color conversion layer is distributed on a side of the N-type epitaxial layer close to the substrate and a side wall of the first LED device structure, as well as a surface of the transparent conductive layer, and exposes the first electrode and the second electrode.

13. The method for manufacturing a front-mounted LED chip according to claim 12, characterized in that: After forming the color conversion layer, the method further includes: forming the first protective layer; and the first protective layer covers the surface of the color conversion layer.

14. The method for manufacturing a front-mounted LED chip according to claim 13, characterized in that: Forming a plurality of the first LED device structures on the substrate specifically includes: forming the N-type epitaxial layer, the quantum well light-emitting layer and the N-type epitaxial layer in sequence on the substrate in a direction away from the substrate; Forming the N-type epitaxial layer with a step structure; the step structure includes the first step and the second step; forming a first channel; wherein the first channel is formed between a plurality of the first LED device structures; The transparent conductive layer is formed; the transparent conductive layer is formed on the surface of the P-type epitaxial layer.

15. The method for manufacturing a front-mounted LED chip according to claim 14, characterized in that: While the N-type epitaxial layer, the quantum well light-emitting layer and the N-type epitaxial layer are sequentially formed on the substrate in a direction away from the substrate, the method further includes: forming a sacrificial layer; the sacrificial layer is distributed on the surface of the substrate.

16. The method for manufacturing a front-mounted LED chip according to claim 15, characterized in that: After forming the first channel, the method further includes: The sacrificial layer is removed to form a first cavity; wherein the color conversion layer distributed on a side of the N-type epitaxial layer close to the substrate is filled in the first cavity.

17. The method for manufacturing a front-mounted LED chip according to claim 16, characterized in that: The color conversion layer is formed by immersion or spin coating.

18. The method for manufacturing a front-mounted LED chip according to claim 17, characterized in that: The first channel is formed by photolithography or plasma etching.

19. The method for manufacturing a front mounted LED chip according to claim 18, characterized in that: When removing the sacrificial layer, a wet etching method or a dry etching method is adopted.

20. The front-mounted LED chip according to claim 19, characterized in that: The material of the sacrificial layer is a high temperature resistant dielectric material.

21. A method for manufacturing a flip-chip LED chip, used for manufacturing the flip-chip LED chip according to any one of claims 8 to 11, characterized in that: include: Providing a substrate as described above; forming a plurality of the first LED device structures and the first reflector layer on the substrate; The first reflector layer is formed on the surface of the transparent conductive layer; The first electrode and the second electrode are formed; the second electrode is formed on the surface of the first reflector layer; the first electrode is formed on the first step of the N-type epitaxial layer; The first color conversion layer is formed; the first color conversion layer is formed on a side of the N-type epitaxial layer close to the substrate.

22. The flip-chip LED chip according to claim 21, characterized in that: After forming the first color conversion layer, the method further includes: The second protection layer is formed; the second protection layer covers the side wall of the first LED device structure and the surface of the first reflector layer.

23. The flip-chip LED chip according to claim 22, characterized in that: When forming the first color conversion layer, the method further comprises: A second color conversion layer is formed; the second color conversion layer is formed on the side wall of the first LED device structure.

24. The flip-chip LED chip according to claim 23, characterized in that: The second protection layer covers a surface of the second color conversion layer and a surface of the first reflector layer.

25. An electronic device, characterized in that: It comprises the face-up LED chip described in any one of claims 1-6, or / and the flip-chip LED chip described in any one of claims 8-11.

26. A method for manufacturing an electronic device, characterized in that: The method comprises the method for manufacturing the upright LED chip as described in any one of claims 12 to 20, or / and the method for manufacturing the flip-chip LED chip as described in any one of claims 21 to 24.

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