Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device.The photoelectric device comprises a first electrode and a second electrode which are oppositely arranged, and the photoelectric device further comprises a first functional layer, a first passivation layer and a second functional layer which are arranged between the first electrode and the second electrode in a stacked mode; the material of the first passivation layer comprises a first nonmetal simple substance. According to the photoelectric device, the first passivation layer is arranged between the first functional layer and the second functional layer, the first passivation layer is made of the nonmetal elementary substance, and the nonmetal elementary substance is an inert material and can effectively passivate active sites on the surface of the first functional layer which is in contact with the nonmetal elementary substance, so that the photoelectric device can effectively improve the photoelectric effect. The film forming uniformity of the second functional layer can be effectively improved, and then the efficiency of the photoelectric device is effectively improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an optoelectronic device, a method for preparing the optoelectronic device, and a display device including the optoelectronic device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting devices (OLED) and quantum dot light-emitting devices (QLED). OLED has become the mainstream technology in the field of display technology due to its excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLED has the advantages of saturated color of emitted light, adjustable wavelength, low start-up voltage, good solution processability, easy fine control of quantum dots, and high quantum yield of photoluminescence and electroluminescence. In recent years, it has become a strong competitor of OLED.

[0003] The structure of traditional OLED and QLED devices generally includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. Under the action of the electric field, the holes generated by the anode of the optoelectronic device and the electrons generated by the cathode move and are injected into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules and finally producing visible light.

[0004] However, the efficiency of the optoelectronic devices prepared by the existing preparation methods is reduced. Summary of the invention

[0005] In view of this, the present application provides a photoelectric device, aiming to improve the problem of low efficiency of existing photoelectric devices.

[0006] An embodiment of the present application is implemented as follows: a photoelectric device includes a first electrode and a second electrode arranged opposite to each other, and the photoelectric device also includes a first functional layer, a first passivation layer and a second functional layer stacked between the first electrode and the second electrode, and the material of the first passivation layer includes a first non-metallic element.

[0007] Optionally, in some embodiments of the present application, the first functional layer is a quantum dot light-emitting layer, and the second functional layer is a first hole functional layer or a first electron functional layer; or

[0008] The second functional layer is a quantum dot light-emitting layer, and the first functional layer is a first hole functional layer or a first electron functional layer.

[0009] Optionally, in some embodiments of the present application, the optoelectronic device further includes a second passivation layer located on the second functional layer and a third functional layer located on the second passivation layer, and the material of the second passivation layer includes a second non-metallic element.

[0010] Optionally, in some embodiments of the present application, the first functional layer is a first hole functional layer, the second functional layer is a quantum dot light-emitting layer, and the third functional layer is a first electron functional layer; or

[0011] The first functional layer is a first electron functional layer, the second functional layer is a quantum dot light-emitting layer, and the third functional layer is a first hole functional layer.

[0012] Optionally, in some embodiments of the present application, the first non-metallic element and the second non-metallic element independently include one or more of Si element, C element, Se element and As element; and / or

[0013] The thickness of the first passivation layer and the second passivation layer are independently 5-10 nm.

[0014] Optionally, in some embodiments of the present application, the material of the first electronic functional layer includes first inorganic semiconductor particles, the first inorganic semiconductor particles include first doped metal oxide particles, first non-doped metal oxide particles, one or more of Group IIB-VIA semiconductor materials, Group IIIA-VA semiconductor materials, and Group IB-IIIA-VIA semiconductor materials, the metal oxide in the first non-doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, the metal oxide in the first doped metal oxide particles includes Zn O, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, the doping element in the first doped metal oxide includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn, the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, CdS, the IIIA-VA semiconductor material includes one or more of InP, GaP, the IB-IIIA-VIA semiconductor material includes one or more of CuInS, CuGaS; and / or

[0015] The material of the first hole functional layer includes second inorganic semiconductor particles, the second inorganic semiconductor particles include one or more of second doped metal oxide particles, second undoped metal oxide particles, and metal sulfides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of NiO, MoO3, WO3, V2O5, CrO3, and CuO, the doping elements in the second doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn, and the metal sulfide includes one or more of MoS3 and WS3; and / or

[0016] The material of the quantum dot light-emitting layer includes quantum dots, and the quantum dots include one or more of single-structure quantum dots, core-shell quantum dots and perovskite semiconductor materials. The material of the single-structure quantum dots, the core material of the core-shell quantum dots and the shell material of the core-shell quantum dots are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS , ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe , PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, G One or more of aAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound comprises one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material comprises a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or

[0017] The first electrode and the second electrode independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal single substance electrode or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al, the material of the metal single substance electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes Au:Mg alloy electrode or Ag:Mg alloy electrode.

[0018] Optionally, in some embodiments of the present application, the average particle size range of the first inorganic semiconductor particles and the second inorganic semiconductor particles is independently 5 to 50 nm; and / or

[0019] The average particle size of the quantum dots is in the range of 5 to 30 nm.

[0020] Optionally, in some embodiments of the present application, when the first functional layer is a quantum dot light-emitting layer and the second functional layer is a first hole functional layer, the optoelectronic device further includes a second electronic functional layer located between the first electrode and the first functional layer; or

[0021] When the first functional layer is a quantum dot light-emitting layer and the second functional layer is a first electronic functional layer, the optoelectronic device further comprises a second hole functional layer located between the first electrode and the first functional layer; or

[0022] When the second functional layer is a quantum dot light-emitting layer and the first functional layer is a first hole functional layer, the optoelectronic device further comprises a second electronic functional layer located between the second functional layer and the second electrode; or

[0023] When the second functional layer is a quantum dot light-emitting layer and the first functional layer is a first electronic functional layer, the optoelectronic device further includes a second hole functional layer located between the second functional layer and the second electrode.

[0024] Optionally, in some embodiments of the present application, the material of the second electronic functional layer includes one or more of inorganic electronic functional materials and organic electronic functional materials, the inorganic electronic functional materials include one or more of Group IIB-VIA semiconductor materials, Group IIIA-VA semiconductor materials, Group IB-IIIA-VIA semiconductor materials, the first doped metal oxide particles, and the first undoped metal oxide particles, and the organic electronic functional materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds; and / or

[0025] The material of the second hole functional layer includes one or more of an inorganic hole functional material and an organic hole functional material. The inorganic hole functional material includes one or more of the second doped metal oxide particles, the second undoped metal oxide particles and the metal sulfide. The organic hole functional material includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4 ,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-di( 1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, poly One or more of nuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, and copper phthalocyanine.

[0026] Accordingly, the present invention also provides a method for preparing a photoelectric device, comprising the following steps:

[0027] providing a first electrode;

[0028] Providing a material for a first functional layer, and disposing the material for the first functional layer on the first electrode to form a first functional layer;

[0029] Disposing a first non-metallic element on the first functional layer to form a first passivation layer;

[0030] Providing a material for a second functional layer, and disposing the material for the second functional layer on the first passivation layer to form a second functional layer;

[0031] A second electrode is arranged on the second functional layer to obtain a photoelectric device.

[0032] Optionally, in some embodiments of the present application, the material of the first functional layer includes quantum dots, and the material of the second functional layer includes the material of the first hole functional layer or the material of the first electron functional layer; or

[0033] The material of the second functional layer includes quantum dots, and the material of the first functional layer includes the material of the first hole functional layer or the material of the first electron functional layer.

[0034] Optionally, in some embodiments of the present application, after forming the second functional layer and before providing the second electrode on the second functional layer, the method further includes:

[0035] Disposing a second non-metallic element on the second functional layer to form a second passivation layer; and

[0036] A material for a third functional layer is provided, and the material for the third functional layer is disposed on the second passivation layer to form the third functional layer.

[0037] Optionally, in some embodiments of the present application, the material of the first functional layer is the material of the first hole functional layer, the material of the second functional layer includes quantum dots, and the material of the third functional layer is the material of the first electron functional layer; or

[0038] The material of the first functional layer is the material of the first electron functional layer, the material of the second functional layer includes quantum dots, and the material of the third functional layer is the material of the first hole functional layer.

[0039] Optionally, in some embodiments of the present application, the first non-metallic element and the second non-metallic element independently include one or more of Si element, C element, Se element and As element; and / or

[0040] The thickness of the first passivation layer and the second passivation layer is 5-10 nm.

[0041] Optionally, in some embodiments of the present application, disposing the material of the first functional layer on the first electrode comprises: providing a dispersion of the material of the first functional layer, disposing the dispersion of the material of the first functional layer on the first electrode, and first drying; and / or

[0042] The disposing the material of the second functional layer on the first passivation layer comprises: providing a dispersion of the material of the second functional layer, disposing the dispersion of the material of the second functional layer on the first passivation layer, and second drying; and / or

[0043] The disposing the material of the third functional layer on the second passivation layer comprises: providing a dispersion of the material of the third functional layer, disposing the dispersion of the material of the third functional layer on the second passivation layer, and third drying.

[0044] Optionally, in some embodiments of the present application, the concentration of the dispersion of the material of the first functional layer, the concentration of the dispersion of the material of the second functional layer, and the concentration of the dispersion of the material of the third functional layer are independently 10 to 60 mg / ml; and / or

[0045] The first drying pressure, the second drying pressure, and the third drying pressure are independently 1×10 -7 ~1ⅹ10 -5 Pa; and / or

[0046] The first drying temperature, the second drying temperature, and the third drying temperature are independently 20 to 30° C.; and / or

[0047] The first drying time, the second drying time, and the third drying time are each independently 1 to 5 hours.

[0048] Optionally, in some embodiments of the present application, the method of disposing the first non-metallic element on the first functional layer is a first evaporation, and / or the method of disposing the second non-metallic element on the second functional layer is a second evaporation;

[0049] The first evaporation rate and the second evaporation rate are independently The first vapor deposition time and the second vapor deposition time are independently 500 to 1000 seconds.

[0050] Correspondingly, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0051] A first passivation layer is arranged between the first functional layer and the second functional layer of the optoelectronic device described in the present application. The material of the first passivation layer is a non-metallic element, and the non-metallic element is an inert material, which can effectively passivate the active sites on the surface of the first functional layer in contact with it. In this way, the film formation uniformity of the second functional layer can be effectively improved, thereby effectively improving the efficiency of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0053] Figure 1 is a flow chart of a method for preparing a photoelectric device provided in an embodiment of the present application;

[0054] Figure 2 is a schematic structural diagram of a first optoelectronic device provided in an embodiment of the present application;

[0055] Figure 3 is a schematic structural diagram of a second optoelectronic device provided in an embodiment of the present application;

[0056] Figure 4 is a schematic structural diagram of a third optoelectronic device provided in an embodiment of the present application;

[0057] Figure 5 is a schematic structural diagram of a fourth optoelectronic device provided in an embodiment of the present application;

[0058] Figure 6 is a schematic structural diagram of a fifth optoelectronic device provided in an embodiment of the present application;

[0059] Figure 7 It is a schematic diagram of the structure of the sixth optoelectronic device provided in an embodiment of the present application.

[0060] Reference numerals:

[0061] Optoelectronic device 100 ; first electrode 10 ; first functional layer 20 ; first passivation layer 30 ; second functional layer 40 ; second electrode 50 ; second passivation layer 60 ; third functional layer 70 ; second electron functional layer 80 ; second hole functional layer 90 . DETAILED DESCRIPTION

[0062] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0063] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0064] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0065] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0066] In the present application, when a layer is formed "on" another layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier transport layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier transport layer, or that there are other spacing structural layers between the second electrode and the first carrier transport layer, such as a light-emitting layer.

[0067] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0068] The technical solution of this application is as follows:

[0069] First, see Figures 1-2 The present invention provides a method for preparing a photoelectric device, comprising the following steps:

[0070] Step S11, providing a first electrode 10;

[0071] Step S12, providing a material for a first functional layer, and disposing the material for the first functional layer on the first electrode 10 to form a first functional layer 20;

[0072] Step S13, disposing a first non-metallic element on the first functional layer 20 to form a first passivation layer 30;

[0073] Step S14, providing a material for a second functional layer, and disposing the material for the second functional layer on the first passivation layer 30 to form a second functional layer 40;

[0074] Step S15 , forming a second electrode 50 on the second functional layer 40 to obtain a photoelectric device 100 .

[0075] The first non-metallic element includes, but is not limited to, one or more of Si element, C element, Se element and As element.

[0076] On the one hand, the first non-metallic element has a low oxidizing property and will not oxidize the materials of the first functional layer 20 and the second functional layer 40; on the other hand, no hydrogen bonds, Coulomb forces or other interactions will occur between the first passivation layer 30 formed by the first non-metallic element and the first functional layer 20 and the second functional layer 40. In this way, when the second functional layer 40 is prepared on the first passivation layer 30, it will not cause agglomeration of the materials of the two functional layers, which is conducive to the preparation of the second functional layer 40 with better film-forming properties.

[0077] In some embodiments, the material of the first functional layer is a first granular material, and the material of the second functional layer is a second granular material.

[0078] It can be understood that when the first functional layer 20 is a granular material, since the surface roughness of the film formed by the granular material is high and the film surface has active sites, when the second functional layer 40 of granular material is set on its surface, it will cause the agglomeration of the granular material, resulting in poor film forming property of the second functional layer, thereby affecting the efficiency and life of the optoelectronic device 100. The method for preparing the optoelectronic device described in the present application forms a first passivation layer 30 on the first functional layer 20 first, and then forms a second functional layer 40 on the first passivation layer 30. The material of the first passivation layer 30 is a non-metallic single substance, and the non-metallic single substance is an inert material, which can effectively passivate the active sites on the surface of the first functional layer 20, thereby improving the uniformity of film formation when preparing the second functional layer 40 on the first functional layer 20, thereby effectively improving the efficiency and life of the optoelectronic device 100. In addition, the improvement of the film formation uniformity of the second functional layer 40 can also improve the consistency of film formation between batches when preparing the optoelectronic device 100, effectively improving the repeatability of the performance of the optoelectronic device 100, and increasing the performance repeatability of the optoelectronic device 100 from the current 30% to at least 90%.

[0079] In some embodiments, the thickness of the first passivation layer 30 is 5-10 nm, for example, 5-8 nm, 6-9 nm, 7-10 nm, etc. Within the thickness range, the uniformity of film formation of the second functional layer 40 can be effectively improved, and the optoelectronic device 100 can have excellent conductivity and carrier transport performance.

[0080] See also Figure 2 In some embodiments, the material of the first functional layer includes quantum dots, and the material of the second functional layer includes the material of the first hole functional layer or the material of the first electron functional layer. In other words, the first granular material includes quantum dots, and the second granular material includes the material of the first hole functional layer or the material of the first electron functional layer. In other words, the first functional layer is a quantum dot light-emitting layer, and the second functional layer is a first hole functional layer or a first electron functional layer.

[0081] In other embodiments, the material of the second functional layer includes quantum dots, and the material of the first functional layer includes the material of the first hole functional layer or the material of the first electron functional layer. In other words, the second granular material includes quantum dots, and the first granular material includes the material of the first hole functional layer or the material of the first electron functional layer. In other words, the second functional layer is a quantum dot light-emitting layer, and the first functional layer is a first hole functional layer or a first electron functional layer.

[0082] See also Figure 3 After forming the second functional layer 40 and before providing the second electrode 50 on the second functional layer 40, the method further includes:

[0083] Disposing a second non-metallic element on the second functional layer 40 to form a second passivation layer 60; and

[0084] A material for a third functional layer is provided, and the material for the third functional layer is disposed on the second passivation layer 60 to form a third functional layer 70 .

[0085] In some embodiments, the material of the third functional layer is a third granular material.

[0086] The second non-metallic element includes, but is not limited to, one or more of Si element, C element, Se element and As element.

[0087] On the one hand, the second non-metallic element has a low oxidizing property and will not produce an oxidizing effect on the materials of the second functional layer 40 and the three-functional layer 70; on the other hand, the second passivation layer 60 formed by the first non-metallic element will not produce hydrogen bonds, Coulomb forces and other interactions with the second functional layer 40 and the three-functional layer 70. In this way, when the three-functional layer 70 is prepared on the second passivation layer 60, it will not cause the materials of the two functional layers to agglomerate, which is conducive to the preparation of a three-functional layer 70 with better film-forming properties.

[0088] First, a second passivation layer 60 is formed on the second functional layer 40, and then a third functional layer 70 is formed on the second passivation layer 60. The material of the second passivation layer 60 is a non-metallic element, which is an inert material and can effectively passivate the active sites on the surface of the second functional layer 40, thereby improving the uniformity of film formation when preparing the third functional layer 70 on the second functional layer 40, thereby effectively improving the efficiency and life of the optoelectronic device 100. In addition, the improvement of the uniformity of film formation of the third functional layer 70 can also improve the consistency of film formation between batches when preparing the optoelectronic device 100, effectively improve the repeatability of the performance of the optoelectronic device 100, and improve the performance repeatability of the optoelectronic device 100 from the existing 30% to at least 90%.

[0089] In some embodiments, the material of the first functional layer 20 is the material of the first hole functional layer, the material of the second functional layer 40 includes quantum dots, and the material of the third functional layer 70 is the material of the first electronic functional layer. In other words, the first functional layer 20 is the first hole functional layer, the second functional layer 40 is the quantum dot light-emitting layer, and the third functional layer 70 is the first electronic functional layer.

[0090] In other embodiments, the material of the first functional layer 20 is the material of the first electronic functional layer, the material of the second functional layer 40 includes quantum dots, and the material of the third functional layer 70 is the material of the first hole functional layer. In other words, the first functional layer 20 is the first electronic functional layer, the second functional layer 40 is the quantum dot light-emitting layer, and the third functional layer 70 is the first hole functional layer.

[0091] The material of the first electronic functional layer includes first inorganic semiconductor particles, and the first inorganic semiconductor particles include but are not limited to one or more of first doped metal oxide particles, first non-doped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The metal oxide in the first non-doped metal oxide particles includes but is not limited to one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide includes but is not limited to one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide include but are not limited to one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn. As an example, the doped metal oxide can be aluminum zinc oxide (AZO), lithium-doped zinc oxide (LZO), magnesium-doped zinc oxide (MZO), tin-doped zinc oxide (Sn-ZnO), etc. The IIB-VIA semiconductor materials include but are not limited to one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor materials include but are not limited to one or more of InP and GaP. The IB-IIIA-VIA semiconductor materials include but are not limited to one or more of CuInS and CuGaS.

[0092] The material of the first hole functional layer includes second inorganic semiconductor particles, and the second inorganic semiconductor particles include but are not limited to one or more of second doped metal oxide particles, second non-doped metal oxide particles, and metal sulfides. The metal oxide in the second doped metal oxide particles and the metal oxide in the second non-doped metal oxide particles independently include but are not limited to one or more of NiO, MoO3, WO3, V2O5, CrO3, and CuO. The doping elements in the second doped metal oxide particles include but are not limited to one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn. The metal sulfide includes but is not limited to one or more of molybdenum sulfide and tungsten sulfide.

[0093] The average particle diameters of the first inorganic semiconductor particles and the second inorganic semiconductor particles are independently in the range of 5 to 50 nm.

[0094] The quantum dots may include, but are not limited to, one or more of single structure quantum dots, core-shell structure quantum dots, and perovskite type semiconductor materials.

[0095] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots may respectively include but are not limited to one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound may include, but is not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compound may include, but is not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0096] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0097] The perovskite semiconductor material may include but is not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of .

[0098] In some embodiments, the average particle size of the quantum dots is in the range of 5 to 50 nm.

[0099] See also Figure 4 In some embodiments, when the first functional layer 20 is a quantum dot light-emitting layer and the second functional layer 40 is a first hole functional layer, before forming the first functional layer, the step further includes: providing a second electronic functional layer 80 on the first electrode 10. At this time, the first functional layer 20 is formed on the second electronic functional layer 80.

[0100] See also Figure 5 In some other embodiments, when the first functional layer 20 is a quantum dot light-emitting layer and the second functional layer 40 is a first electronic functional layer, before forming the first functional layer, the step further includes: providing a second hole functional layer 90 on the first electrode 10. At this time, the first functional layer 20 is formed on the second hole functional layer 90.

[0101] See also Figure 6 In some embodiments, when the second functional layer 40 is a quantum dot light-emitting layer and the first functional layer 20 is a first hole functional layer, the second electrode 50 is provided on the second functional layer 40, including: sequentially providing a stacked second electronic functional layer 80 and a second electrode 50 on the second functional layer 40.

[0102] See also Figure 7 In some embodiments, when the second functional layer 40 is a quantum dot light-emitting layer and the first functional layer 20 is a first electronic functional layer, the second electrode 50 is provided on the second functional layer 40, including: sequentially providing a stacked second hole functional layer 90 and a second electrode 50 on the second functional layer 40.

[0103] The material of the second electronic functional layer 80 may include, but is not limited to, one or more of an inorganic electronic functional material and an organic electronic functional material. The inorganic electronic functional material may be one or more of the first doped metal oxide particles described above, the first non-doped metal oxide particles described above, the IIB-VIA semiconductor material described above, the IIIA-VA semiconductor material described above, and the IB-IIIA-VIA semiconductor material described above. The organic electronic functional material may include, but is not limited to, one or more of a quinoxaline compound, an imidazole compound, a triazine compound, a fluorene-containing compound, and a hydroxyquinoline compound.

[0104] The material of the second hole functional layer 90 may include, but is not limited to, one or more of an inorganic hole functional material and an organic hole functional material. The inorganic hole functional material may be one or more of the second doped metal oxide particles described above, the second undoped metal oxide particles described above, and the metal sulfide described above.The organic hole functional material may include, but is not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro)- -TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), Spiro-NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene) One or more of a base, an aromatic tertiary amine, a polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, and copper phthalocyanine.

[0105] The method of setting the first non-metallic element on the first functional layer 20, setting the second non-metallic element on the second functional layer 40, forming the first functional layer 20, forming the second functional layer 40, forming the second electrode 50, forming the third functional layer 70, forming the second electronic functional layer 80 and forming the second hole functional layer 90 can be implemented by conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction method, anodization method, electrolytic deposition method, and coprecipitation method. The physical method includes physical plating method and solution method, among which the physical plating method includes: thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion plating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method, etc.; the solution method can be spin coating method, printing method, inkjet printing method, doctor blade method, printing method, dip pulling method, immersion method, spray coating method, roll coating method, casting method, slit coating method and strip coating method, etc.

[0106] In some embodiments, the method of disposing the first non-metallic element on the first functional layer 20 is a first evaporation. In this way, the first passivation layer 30 can be formed more uniformly, and the active sites on the surface of the first functional layer 20 can be better covered, thereby achieving a better passivation effect.

[0107] In other embodiments, the method of disposing the second non-metallic element on the second functional layer 40 is a second evaporation. In this way, the second passivation layer 60 can be formed more uniformly, and the active sites on the surface of the second functional layer 40 can be better covered, thereby achieving a better passivation effect.

[0108] The rates of the first evaporation and the second evaporation are independently For example, The first evaporation and the second evaporation times are independently 500 to 1000 seconds, for example, 500 to 800 seconds, 600 to 900 seconds, 700 to 1000 seconds, etc. Within the range of the evaporation parameters, it is beneficial to prepare the first passivation layer 30 and the second passivation layer 60 with suitable film thickness and good film forming properties.

[0109] In some embodiments, disposing the material of the first functional layer on the first electrode 10 includes: providing a dispersion of the material of the first functional layer, disposing the dispersion of the material of the first functional layer on the first electrode 10, and first drying.

[0110] In some embodiments, disposing the material of the second functional layer on the first passivation layer 30 includes: providing a dispersion of the material of the second functional layer, disposing the dispersion of the material of the second functional layer on the first passivation layer 30, and second drying.

[0111] In some embodiments, disposing the material of the third functional layer on the second passivation layer 60 includes: providing a dispersion of the material of the third functional layer, disposing the dispersion of the material of the third functional layer on the second passivation layer 60, and third drying.

[0112] The solvents in the dispersion of the material of the first functional layer, the dispersion of the material of the second functional layer, and the dispersion of the material of the third functional layer can be solvents known to be used for dispersing inorganic semiconductor particles, for example, can include but are not limited to one or more of isopropanol, ethanol, DMSO (dimethyl sulfoxide), NMP (N-methylpyrrolidone) and chlorobenzene.

[0113] The concentration of the dispersion of the material of the first functional layer, the concentration of the dispersion of the material of the second functional layer, and the concentration of the dispersion of the material of the third functional layer can be independently in the range of 10 to 60 mg / ml, for example, 10 to 40 mg / ml, 20 to 50 mg / ml, 30 to 60 mg / ml, etc. Within the concentration range, the dispersion of the material of the first functional layer, the dispersion of the material of the second functional layer, and the dispersion of the material of the third functional layer can have good dispersibility and film-forming properties.

[0114] The first drying, the second drying, and the third drying can be natural drying, vacuum drying, heating drying, freeze drying, annealing drying, etc.

[0115] In at least one embodiment, the first drying, the second drying, and the third drying are vacuum drying.

[0116] The air pressure of the first drying, the air pressure of the second drying, and the air pressure of the third drying are 1×10 -7 ~1ⅹ10 -5 Pa, for example, 2 x 10 -7 Pa, 5×10 -7 Pa, 8×10 -7 Pa, 1×10 -6 Pa, 3×10 -6 Pa, 5×10 -6 Pa, 8×10 -6 Pa, etc. Within the above gas pressure range, drying can be performed quickly and effectively, and the second functional layer 40 with better film-forming properties can be prepared.

[0117] The first drying temperature, the second drying temperature, and the third drying temperature are independently 20-30° C., for example, 20-25° C., 22-28° C., 24-30° C., etc. Within the temperature range, drying can be performed quickly and effectively, and the second functional layer 40 with better film-forming properties can be prepared.

[0118] The first drying time, the second drying time, and the third drying time are 1 to 5 hours, such as 1 hour, 2 hours, 3 hours, 4 hours, 5 hours, etc. Within the time range, drying can be performed quickly and effectively, and the second functional layer 40 with better film-forming properties can be prepared.

[0119] The first electrode 10 and the second electrode 50 are electrodes known in the art for use in optoelectronic devices, for example, they may independently include but are not limited to doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, metal single-substance electrodes or alloy electrodes. The material of the doped metal oxide electrode may include but is not limited to one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., wherein " / " represents a stacked structure, for example, AZO / Ag / AZO represents a composite electrode including a sequentially stacked AZO layer, an Ag layer and an AZO layer. The material of the metal single substance electrode may include but is not limited to one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba. The alloy electrodes include but are not limited to Au:Mg alloy electrodes and Ag:Mg alloy electrodes.

[0120] In some embodiments, the anode is an electrode with a relatively high work function, for example, it may include but is not limited to a doped metal oxide electrode with a relatively high work function, a metal single substance electrode with a relatively high work function, and a carbon nanotube electrode. The metal single substance electrode with a relatively high work function may be selected from but is not limited to Ni, Pt, Au, Ag, Ir, etc.

[0121] In some embodiments, the cathode is an electrode with a relatively low work function, for example, it may include but is not limited to a metal single substance electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The metal single substance electrode with a relatively low work function may be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function may be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrode with a relatively low work function may be Au:Mg and Ag:Mg, etc.

[0122] In some embodiments, a substrate is further provided on the side of the first electrode 10 away from the first functional layer 20. The substrate may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may include but is not limited to one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide and polyether sulfone.

[0123] It can be understood that when the optoelectronic device 100 also includes functional layers conventionally used in optoelectronic devices that help improve the performance of the optoelectronic device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc., the preparation method of the optoelectronic device 100 may also include the step of preparing the above-mentioned functional layers using conventional techniques in the field.

[0124] It should be noted that the electron functional layer described in the present application can be an electron injection layer, or an electron transport layer, or a stacked electron injection layer and an electron transport layer, and the hole functional layer described in the present application can be a hole injection layer, or a hole transport layer, or a stacked hole injection layer and a hole transport layer.

[0125] Second, see Figure 2 The embodiment of the present application further provides a photoelectric device 100, comprising a first electrode 10, a first functional layer 20, a first passivation layer 30, a second functional layer 40 and a second electrode 50 which are stacked in sequence.

[0126] In some embodiments, the first functional layer is a quantum dot light-emitting layer, and the second functional layer is a first hole functional layer or a first electron functional layer.

[0127] In other embodiments, the second functional layer is a quantum dot light-emitting layer, and the first functional layer is a first hole functional layer or a first electron functional layer.

[0128] See also Figure 3In some embodiments, the optoelectronic device 100 further includes a second passivation layer 60 and a third functional layer 70 sequentially stacked on the second functional layer 40 , and the second electrode 50 is disposed on the third functional layer 70 .

[0129] In some embodiments, the first functional layer 20 is a first hole functional layer, the second functional layer 40 is a quantum dot light-emitting layer, and the third functional layer 70 is a first electron functional layer.

[0130] In other embodiments, the first functional layer 20 is a first electronic functional layer, the second functional layer 40 is a quantum dot light-emitting layer, and the third functional layer 70 is a first hole functional layer.

[0131] See also Figure 4 In some embodiments, when the first functional layer 20 is a quantum dot light-emitting layer and the second functional layer 40 is a first hole functional layer, the optoelectronic device 100 further includes a second electronic functional layer 80 disposed between the first electrode 10 and the first functional layer 20 .

[0132] See also Figure 5 In other embodiments, when the first functional layer 20 is a quantum dot light-emitting layer and the second functional layer 40 is a first electronic functional layer, the optoelectronic device 100 also includes a second hole functional layer 90 disposed between the first electrode 10 and the first functional layer 20 .

[0133] See also Figure 6 In some embodiments, when the second functional layer 40 is a quantum dot light-emitting layer and the first functional layer 20 is a first hole functional layer, the optoelectronic device 100 further includes a second electronic functional layer 80 disposed between the second functional layer 40 and the second electrode 50 .

[0134] See also Figure 7 In some embodiments, when the second functional layer 40 is a quantum dot light-emitting layer and the first functional layer 20 is a first electronic functional layer, the optoelectronic device 100 further includes a second hole functional layer 90 disposed between the second functional layer 40 and the second electrode 50 .

[0135] The materials of the first electrode 10, the first electron functional layer, the first hole functional layer, the first passivation layer 30, the second electrode 50, the second passivation layer 60, the second electron functional layer 80, and the second hole functional layer 90 are as described above and will not be repeated here.

[0136] The thickness of the first passivation layer 30 and the thickness of the second passivation layer 60 are as described above, and will not be described again here.

[0137] It is understandable that the optoelectronic device 100 may also be provided with some functional layers conventionally used in optoelectronic devices to help improve the performance of the optoelectronic device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0138] It can be understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emitting requirements of the optoelectronic device 100 .

[0139] It is understood that the optoelectronic device 100 may be an upright optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 may be a quantum dot optoelectronic device (QLED).

[0140] The first passivation layer 30 is disposed between the first functional layer 20 and the second functional layer 40 of the optoelectronic device 100 described in the present application. The material of the first passivation layer 30 is a non-metallic element, which is an inert material and can effectively passivate the active sites on the surface of the first functional layer 20 in contact with it, so that the film formation uniformity of the second functional layer 40 can be effectively improved, thereby effectively improving the efficiency of the optoelectronic device 100. , longer life and higher performance repeatability.

[0141] In a third aspect, the present application further relates to a display device, wherein the display device comprises the optoelectronic device 100 .

[0142] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0143] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0144] Example 1

[0145] Providing an ITO anode having a thickness of 50 nm;

[0146] Spin coating PEDOT:PSS material on the cathode, annealing at 200° C. for 30 min, to obtain a hole injection layer with a thickness of 50 nm;

[0147] Spin coating the TFB material on the hole injection layer, annealing at 200° C. for 30 min, to obtain a hole transport layer with a thickness of 20 nm;

[0148] The CdSe / CdS core-shell structure quantum dot material is inkjet printed on the hole transport layer, and then placed in a vacuum drying chamber at a temperature of 25° C. and 10 -7 Drying at a pressure of 1.3 Pa for 3 h to obtain a quantum dot light-emitting layer;

[0149] The Si element is evaporated on the quantum dot light-emitting layer, wherein the evaporation rate is The time is 500 s, and a first passivation layer 30 with a thickness of 10 nm is obtained;

[0150] An ethanol solution of ZnO was inkjet printed on the first passivation layer 30, and then placed in a vacuum drying chamber at a temperature of 25°C and 10 -7 After drying for 3 h at a pressure of 1.3 Pa, an electron transport layer with a thickness of 40 nm was obtained;

[0151] Vapor depositing Ag on the electron transport layer to obtain a cathode with a thickness of 100 nm;

[0152] After packaging, the optoelectronic device 100 is obtained.

[0153] Example 2

[0154] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the thickness of the first passivation layer 30 is 5 nm.

[0155] Example 3

[0156] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the thickness of the first passivation layer 30 is 7 nm.

[0157] Example 4

[0158] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the thickness of the first passivation layer 30 is 2 nm.

[0159] Example 5

[0160] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the thickness of the first passivation layer 30 is 20 nm.

[0161] Example 6

[0162] This embodiment is basically the same as Embodiment 1, except that Se is used to replace Si in Embodiment 1 in this embodiment.

[0163] Example 7

[0164] This embodiment is basically the same as Embodiment 1, except that C is used to replace Si in Embodiment 1 in this embodiment.

[0165] Example 8

[0166] This embodiment is basically the same as Embodiment 1, except that As is used in this embodiment to replace Si in Embodiment 1.

[0167] Example 9

[0168] This embodiment is substantially the same as Embodiment 1, except that this embodiment uses Mg-doped ZnO to replace the ZnO in Embodiment 1.

[0169] Example 10

[0170] This embodiment is basically the same as Embodiment 1, except that TiO2 is used to replace ZnO in Embodiment 1.

[0171] Embodiment 11

[0172] providing a Ag cathode having a thickness of 50 nm;

[0173] The cathode was spin-coated with an ethanol solution of ZnO and then placed in a vacuum drying chamber at a temperature of 25°C and 10 -7 After drying for 3 h at a pressure of 1.3 Pa, an electron transport layer with a thickness of 40 nm was obtained;

[0174] The CdSe / CdS core-shell structure quantum dot material is inkjet printed on the electron transport layer, and then placed in a vacuum drying chamber at a temperature of 25° C. and 10 -7 Drying at a pressure of 1.3 Pa for 3 h to obtain a quantum dot light-emitting layer;

[0175] The Si element is evaporated on the quantum dot light-emitting layer, wherein the evaporation rate is The time is 500 s, and a first passivation layer 30 with a thickness of 10 nm is obtained;

[0176] An ethanol solution of NiO was inkjet printed on the first passivation layer 30, and then placed in a vacuum drying chamber at a temperature of 25°C and 10 -7 The layer was dried under a pressure of 1.3 Pa for 3 h to obtain a hole transport layer with a thickness of 40 nm.

[0177] Spin-coating a PEDOT:PSS material on the hole transport layer, annealing at 200° C. for 30 min, to obtain a hole injection layer with a thickness of 50 nm;

[0178] Vapor-depositing ITO on the hole transport layer to obtain an anode with a thickness of 100 nm;

[0179] After packaging, the optoelectronic device 100 is obtained.

[0180] Example 12

[0181] providing a Ag cathode having a thickness of 50 nm;

[0182] The cathode was spin-coated with an ethanol solution of ZnO and then placed in a vacuum drying chamber at a temperature of 25°C and 10 -7 After drying for 3 h at a pressure of 1.3 Pa, an electron transport layer with a thickness of 40 nm was obtained;

[0183] A Si single substance is evaporated on the electron transport layer, wherein the evaporation rate is The time is 500 s, and a first passivation layer 30 with a thickness of 10 nm is obtained;

[0184] The CdSe / CdS core-shell structure quantum dot material is inkjet printed on the first passivation layer 30, and then placed in a vacuum drying chamber at a temperature of 25° C. and 10 -7 Drying at a pressure of 1.3 Pa for 3 h to obtain a quantum dot light-emitting layer;

[0185] The ethanol solution of NiO was inkjet printed on the quantum dot light-emitting layer, and then placed in a vacuum drying chamber at a temperature of 25° C. and 10 -7 The layer was dried at a pressure of 1.3 Pa for 3 h to obtain a hole transport layer with a thickness of 40 nm.

[0186] Spin-coating a PEDOT:PSS material on the hole transport layer, annealing at 200° C. for 30 min, to obtain a hole injection layer with a thickness of 50 nm;

[0187] Vapor-depositing ITO on the hole transport layer to obtain an anode with a thickness of 100 nm;

[0188] After packaging, the optoelectronic device 100 is obtained.

[0189] Example 13

[0190] Providing an ITO anode having a thickness of 50 nm;

[0191] Spin coating PEDOT:PSS material on the cathode, annealing at 200° C. for 30 min, to obtain a hole injection layer with a thickness of 50 nm;

[0192] Spin coating NiO ethanol solution on the hole injection layer, annealing at 200° C. for 30 min, to obtain a hole transport layer with a thickness of 20 nm;

[0193] Se is evaporated on the hole transport layer at a rate of The time is 500 s, and a first passivation layer 30 with a thickness of 10 nm is obtained;

[0194] The CdSe / CdS core-shell structure quantum dot material is inkjet printed on the first passivation layer 30, and then placed in a vacuum drying chamber at a temperature of 25° C. and 10 -7 Drying at a pressure of 1.3 Pa for 3 h to obtain a quantum dot light-emitting layer;

[0195] The ethanol solution of ZnO was inkjet printed on the quantum dot light-emitting layer, and then placed in a vacuum drying chamber at a temperature of 25° C. and 10 -7 After drying for 3 h at a pressure of 1.3 Pa, an electron transport layer with a thickness of 40 nm was obtained;

[0196] Vapor depositing Ag on the electron transport layer to obtain a cathode with a thickness of 100 nm;

[0197] After packaging, the optoelectronic device 100 is obtained.

[0198] Embodiment 14

[0199] This embodiment is basically the same as Embodiment 12, except that this embodiment further includes:

[0200] The Si element is evaporated on the quantum dot light-emitting layer, wherein the evaporation rate is The time is 500 s, and a second passivation layer 60 with a thickness of 10 nm is obtained;

[0201] In this embodiment, the hole transport layer is disposed on the second passivation layer 60 .

[0202] Embodiment 15

[0203] This embodiment is basically the same as Embodiment 13, except that this embodiment further includes:

[0204] Si is evaporated on the quantum dot light-emitting layer, where the evaporation rate is The time is 500 s, and a second passivation layer 60 with a thickness of 10 nm is obtained.

[0205] In this embodiment, the electron transport layer is disposed on the second passivation layer 60 .

[0206] Comparative Example 1

[0207] This comparative example is substantially the same as Example 1, except that the optoelectronic device 100 of this example does not include the first passivation layer 30 .

[0208] Comparative Example 2

[0209] This comparative example is substantially the same as Example 9, except that the optoelectronic device 100 of this example does not include the first passivation layer 30 .

[0210] Comparative Example 3

[0211] This comparative example is substantially the same as Example 10, except that the optoelectronic device 100 of this example does not include the first passivation layer 30 .

[0212] Comparative Example 4

[0213] This comparative example is substantially the same as Example 11, except that the optoelectronic device 100 of this example does not include the first passivation layer 30 .

[0214] Comparative Example 5

[0215] This comparative example is substantially the same as Example 12, except that the optoelectronic device 100 of this example does not include the first passivation layer 30 .

[0216] Comparative Example 6

[0217] This comparative example is basically the same as Example 1, except that polyvinyl chloride is used to replace Si in Example 1 in this example.

[0218] Comparative Example 7

[0219] This comparative example is basically the same as Example 1, except that Al2O3 is used to replace Si in Example 1 in this example.

[0220] Comparative Example 8

[0221] This comparative example is basically the same as Example 11, except that polyvinyl chloride is used to replace Si in Example 13 in this example.

[0222] Comparative Example 9

[0223] This comparative example is basically the same as Example 11, except that Al2O3 is used to replace Si in Example 1 in this example.

[0224] Comparative Example 10

[0225] This comparative example is basically the same as Example 1, except that SiO2 is used to replace Si in Example 1 in this example.

[0226] The external quantum efficiency EQE and lifespan T95@1000nit tests were performed on the optoelectronic devices of Examples 1 to 15 and Comparative Examples 1 to 10, respectively. The test results are shown in Table 1.

[0227] The test method of external quantum efficiency EQE is as follows: using FPD optical property measurement equipment from Foster, controlling the efficiency test system built by QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabView, measuring parameters such as voltage, current, brightness, and luminescence spectrum, and calculating the device external quantum efficiency EQE;

[0228] The test method for life span T95@1000nit is: in CDA gas, under constant current or voltage drive, measure the time taken for the device brightness to decay to a certain proportion of the maximum brightness, and the time taken for the brightness to decay to 95% of the maximum brightness is defined as T95, and this life span is the measured life span. In order to shorten the life span test cycle, the device life span test is usually carried out at high brightness by accelerating device aging, and the life span at low brightness is obtained by fitting the decay fitting formula. For example, the life span at 1000nits is recorded as T95@1000nits, and the calculation formula is:

[0229]

[0230] Among them, T95 L The lifespan under low brightness, generally 1000nits, T95 H is the lifespan under high brightness, that is, the measured lifespan, L H is the maximum brightness that the device is accelerated to, L L Generally, it is 1000nits, A is the acceleration factor, which is 1.7. The constant current is 2mA.

[0231] Table 1:

[0232]

[0233]

[0234] From Table 1 we can see that:

[0235] Compared with the optoelectronic devices of Comparative Examples 1 to 3, the optoelectronic devices of Examples 1 to 10 have higher luminous efficiency and longer life. It can be seen that first forming the first passivation layer 30 on the quantum dot light-emitting layer and then forming the electron transport layer can effectively improve the luminous efficiency and life of the optoelectronic device 100. The reason may be that the first passivation layer 30 effectively passivates the active sites of the quantum dot light-emitting layer and improves the film-forming effect of the electron transport layer.

[0236] Compared with the optoelectronic devices of comparative examples 6 to 7 and 10, the optoelectronic devices of embodiments 1 to 3 and 6 to 10 have higher luminous efficiency and longer lifespan, while the optoelectronic devices of embodiments 4 to 5 have lower luminous efficiency and shorter lifespan. The reason may be that the thickness of the first passivation layer 30 of the optoelectronic device of embodiment 4 is too thin, the passivation effect is poor, and there is also a phenomenon of active sites causing agglomeration of inorganic semiconductor particles, while the thickness of the first passivation layer 30 of the optoelectronic device of embodiment 5 is too thick, which affects the conductivity and electron transport performance of the optoelectronic device;

[0237] Compared with the optoelectronic devices of comparative examples 4 and 8 to 9, the optoelectronic devices of embodiments 11 and 13 to 15 have higher luminous efficiency and longer life. It can be seen that first forming a passivation layer on the quantum dot light-emitting layer and then forming a hole transport layer or an electron transport layer, or first forming a passivation layer on the hole transport layer or the electron transport layer and then forming a quantum dot light-emitting layer, can effectively improve the luminous efficiency and life of the optoelectronic device 100. The reason may be that the passivation layer effectively passivates the active sites on the surface of the functional layer, thereby improving the film-forming effect of the functional layer formed thereon.

[0238] Compared with the optoelectronic device of comparative example 5, the optoelectronic device of example 12 has higher luminous efficiency and longer life. It can be seen that first forming a first passivation layer on the electron transport layer and then forming a quantum dot light-emitting layer can effectively improve the luminous efficiency and life of the optoelectronic device. The reason may be that the first passivation layer effectively passivates the active sites of the quantum dot light-emitting layer, thereby improving the film-forming effect of the quantum dot light-emitting layer.

[0239] Device performance repeatability test:

[0240] The testing method for the device performance repeatability test is: 10 batches of the photoelectric devices in Example 1 and Comparative Example 1 are repeatedly prepared, with 20 photoelectric devices in each batch, and the efficiency and life of the photoelectric devices are tested.

[0241] The test results show that among the 10 batches of optoelectronic devices in Example 1, 90% of the optoelectronic devices fluctuate within the 10% range of the average efficiency and average life of the optoelectronic devices, while among the 10 batches of optoelectronic devices in the comparative example, only 30% of the optoelectronic devices fluctuate within the 10% range of the average efficiency and average life of the optoelectronic devices. It can be seen that the performance repeatability of the optoelectronic devices prepared by the preparation method described in the present application is high.

[0242] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, comprising a first electrode and a second electrode arranged opposite to each other, characterized in that: The optoelectronic device further includes a first functional layer, a first passivation layer, and a second functional layer stacked between the first electrode and the second electrode, wherein a material of the first passivation layer includes a first non-metallic element.

2. The optoelectronic device according to claim 1, characterized in that The first functional layer is a quantum dot light-emitting layer, and the second functional layer is a first hole functional layer or a first electron functional layer; or The second functional layer is a quantum dot light-emitting layer, and the first functional layer is a first hole functional layer or a first electron functional layer.

3. The optoelectronic device according to claim 1, characterized in that The optoelectronic device further includes a second passivation layer located on the second functional layer and a third functional layer located on the second passivation layer, wherein the material of the second passivation layer includes a second non-metallic element.

4. The optoelectronic device according to claim 3, characterized in that The first functional layer is a first hole functional layer, the second functional layer is a quantum dot light-emitting layer, and the third functional layer is a first electron functional layer; or The first functional layer is a first electron functional layer, the second functional layer is a quantum dot light-emitting layer, and the third functional layer is a first hole functional layer.

5. The optoelectronic device according to any one of claims 3 to 4, characterized in that: The first non-metallic single substance and the second non-metallic single substance independently include one or more of Si single substance, C single substance, Se single substance and As single substance; and / or The thickness of the first passivation layer and the second passivation layer are independently 5-10 nm.

6. The optoelectronic device according to any one of claims 1 to 4, characterized in that: The material of the first electronic functional layer includes first inorganic semiconductor particles, the first inorganic semiconductor particles include first doped metal oxide particles, first undoped metal oxide particles, one or more of IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, the metal oxide in the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, the metal oxide in the first doped metal oxide includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, the doping element in the first doped metal oxide includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn, the IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, CdS, the IIIA-VA semiconductor materials include one or more of InP, GaP, the IB-IIIA-VIA semiconductor materials include one or more of CuInS, CuGaS; and / or The material of the first hole functional layer includes second inorganic semiconductor particles, the second inorganic semiconductor particles include one or more of second doped metal oxide particles, second undoped metal oxide particles, and metal sulfides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of NiO, MoO3, WO3, V2O5, CrO3, and CuO, the doping elements in the second doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn, and the metal sulfide includes one or more of MoS3 and WS3; and / or The material of the quantum dot light-emitting layer includes quantum dots, and the quantum dots include one or more of single-structure quantum dots, core-shell quantum dots and perovskite semiconductor materials. The material of the single-structure quantum dots, the core material of the core-shell quantum dots and the shell material of the core-shell quantum dots are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS , ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe , PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, G One or more of aAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound comprises one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material comprises a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or The first electrode and the second electrode independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal single substance electrode or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al, the material of the metal single substance electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes Au:Mg alloy electrode or Ag:Mg alloy electrode.

7. The optoelectronic device according to claim 6, characterized in that The average particle sizes of the first inorganic semiconductor particles and the second inorganic semiconductor particles are independently in the range of 5 to 50 nm; and / or The average particle size of the quantum dots is in the range of 5 to 30 nm.

8. The optoelectronic device according to any one of claims 1 to 4, characterized in that: When the first functional layer is a quantum dot light-emitting layer and the second functional layer is a first hole functional layer, the optoelectronic device further comprises a second electronic functional layer located between the first electrode and the first functional layer; or When the first functional layer is a quantum dot light-emitting layer and the second functional layer is a first electronic functional layer, the optoelectronic device further comprises a second hole functional layer located between the first electrode and the first functional layer; or When the second functional layer is a quantum dot light-emitting layer and the first functional layer is a first hole functional layer, the optoelectronic device further comprises a second electronic functional layer located between the second functional layer and the second electrode; or When the second functional layer is a quantum dot light-emitting layer and the first functional layer is a first electronic functional layer, the optoelectronic device further includes a second hole functional layer located between the second functional layer and the second electrode.

9. The optoelectronic device according to claim 8, characterized in that The material of the second electronic functional layer includes one or more of inorganic electronic functional materials and organic electronic functional materials, the inorganic electronic functional materials include one or more of Group IIB-VIA semiconductor materials, Group IIIA-VA semiconductor materials, Group IB-IIIA-VIA semiconductor materials, the first doped metal oxide particles, and the first undoped metal oxide particles, and the organic electronic functional materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds; and / or The material of the second hole functional layer includes one or more of an inorganic hole functional material and an organic hole functional material. The inorganic hole functional material includes one or more of the second doped metal oxide particles, the second undoped metal oxide particles and the metal sulfide. The organic hole functional material includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4 ,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-di( 1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, poly One or more of nuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, and copper phthalocyanine.

10. A method for preparing a photoelectric device, characterized in that: The steps include: providing a first electrode; Providing a material for a first functional layer, and disposing the material for the first functional layer on the first electrode to form a first functional layer; Disposing a first non-metallic element on the first functional layer to form a first passivation layer; Providing a material for a second functional layer, and disposing the material for the second functional layer on the first passivation layer to form a second functional layer; A second electrode is arranged on the second functional layer to obtain a photoelectric device.

11. The preparation method according to claim 10, characterized in that: The material of the first functional layer includes quantum dots, and the material of the second functional layer includes the material of the first hole functional layer or the material of the first electron functional layer; or The material of the second functional layer includes quantum dots, and the material of the first functional layer includes the material of the first hole functional layer or the material of the first electron functional layer.

12. The preparation method according to claim 10, characterized in that: After forming the second functional layer and before providing the second electrode on the second functional layer, the method further includes: Disposing a second non-metallic element on the second functional layer to form a second passivation layer; and A material for a third functional layer is provided, and the material for the third functional layer is disposed on the second passivation layer to form the third functional layer.

13. The preparation method according to claim 12, characterized in that: The material of the first functional layer is the material of the first hole functional layer, the material of the second functional layer includes quantum dots, and the material of the third functional layer is the material of the first electron functional layer; or The material of the first functional layer is the material of the first electron functional layer, the material of the second functional layer includes quantum dots, and the material of the third functional layer is the material of the first hole functional layer.

14. The preparation method according to claims 10 to 13, characterized in that: The first non-metallic single substance and the second non-metallic single substance independently include one or more of Si single substance, C single substance, Se single substance and As single substance; and / or The thickness of the first passivation layer and the second passivation layer is 5-10 nm.

15. The preparation method according to any one of claims 10 to 13, characterized in that: The disposing the material of the first functional layer on the first electrode comprises: providing a dispersion of the material of the first functional layer, disposing the dispersion of the material of the first functional layer on the first electrode, and first drying; and / or The disposing the material of the second functional layer on the first passivation layer comprises: providing a dispersion of the material of the second functional layer, disposing the dispersion of the material of the second functional layer on the first passivation layer, and second drying; and / or The disposing the material of the third functional layer on the second passivation layer comprises: providing a dispersion of the material of the third functional layer, disposing the dispersion of the material of the third functional layer on the second passivation layer, and third drying.

16. The preparation method according to claim 15, characterized in that: The concentration of the dispersion of the material of the first functional layer, the concentration of the dispersion of the material of the second functional layer, and the concentration of the dispersion of the material of the third functional layer are independently 10 to 60 mg / ml; and / or The first drying pressure, the second drying pressure, and the third drying pressure are independently 1×10 -7 ~1ⅹ10 -5 Pa; and / or The first drying temperature, the second drying temperature, and the third drying temperature are independently 20 to 30° C.; and / or The first drying time, the second drying time, and the third drying time are each independently 1 to 5 hours.

17. The preparation method according to any one of claims 10 to 13, characterized in that: The method of disposing the first non-metallic element on the first functional layer is a first evaporation, and / or the method of disposing the second non-metallic element on the second functional layer is a second evaporation; The first evaporation rate and the second evaporation rate are independently The first vapor deposition time and the second vapor deposition time are independently 500 to 1000 seconds.

18. A display device, characterized in that: The display device comprises the optoelectronic device according to any one of claims 1 to 9, or the display device comprises the optoelectronic device prepared by the preparation method according to any one of claims 10 to 17.

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