Film forming apparatus and method for manufacturing electronic device

Abstract

The invention provides a film forming apparatus and a method of manufacturing an electronic device capable of suppressing adverse effects caused by simultaneous preparation operations for forming a film in two regions. A film forming apparatus (1) alternately repeats: a step for performing a preparation operation for performing a film forming operation on a substrate fed into a second region (B) while performing a film forming operation by an evaporation source (110) in a first region (A); and a step of performing the preparation operation on the substrate fed into the first region (A) while performing the film formation operation in the second region (B), characterized in that when the substrate feeding into the first region (A) or the second region (B) has delayed, the substrate is fed into the first region (A) or the second region (B) in the first region (A) and the second region (B), and the preparation operation is performed on the substrate fed into the first region (A) or the second region (B) in the first region (A) and the second region (B). The preparation action which is normally performed is not performed at the same time.

Description

Technical Field

[0001] The present invention relates to a film forming apparatus and a method for manufacturing an electronic device. Background Art

[0002] In the past, in a film forming device, there is a known technique for alternately forming films in two areas. In such a technique, while film forming is being performed in one area, preparatory actions such as alignment of the substrate and the mask are performed in the other area. This can improve production efficiency.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-26931 Summary of the invention

[0006] Problems to be solved by the invention

[0007] In the prior art as described above, when the substrate delivery to any area is delayed due to some fault, the time until the preparatory operation in the area is completed becomes longer. Therefore, during the preparatory operation in the area, the preparatory operation in the other area starts. As a result, the preparatory operation is performed in two areas at the same time. In this case, there may be adverse effects such as temporary concentration of power load due to the concentration of operations.

[0008] An object of the present invention is to provide a film forming apparatus and a method for manufacturing an electronic device that can suppress adverse effects caused by performing preparation operations for film formation in two areas at the same time.

[0009] Solutions to Solve Problems

[0010] The present invention is a film forming device, comprising:

[0011] a film forming chamber having a first region and a second region for forming a thin film relative to a substrate; and

[0012] a film forming source that forms a thin film relative to the substrate,

[0013] The film forming device alternately and repeatedly performs the following steps: a step of performing a preparatory action for performing a film forming action on the substrate sent to the second area while the film forming action is performed by the film forming source in the first area; and a step of performing the preparatory action on the substrate sent to the first area while the film forming action is performed in the second area.

[0014] It is characterized in that

[0015] When there is a delay in the feeding of the substrate into the first area or the second area, the preparation operation normally performed is not performed simultaneously in the first area and the second area.

[0016] Effects of the Invention

[0017] As described above, according to the present invention, it is possible to suppress adverse effects caused by performing the preparation operation for film formation in two areas at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic diagram of an electronic device manufacturing apparatus including a film forming apparatus according to an embodiment.

[0019] Figure 2 It is a perspective view showing the internal structure of the film forming apparatus according to the embodiment.

[0020] Figure 3 It is a schematic diagram showing the internal structure of the film forming apparatus according to the embodiment.

[0021] Figure 4 It is a schematic diagram showing a moving mechanism of a film forming source according to an embodiment.

[0022] Figure 5 It is a schematic diagram of a moving mechanism of a film forming source according to an embodiment and a modified example.

[0023] Figure 6 This is a diagram that explains the relationship between the elapsed time and various actions.

[0024] Figure 7 This is a diagram that explains the relationship between the elapsed time and various actions.

[0025] Figure 8 It is an explanatory diagram of an organic EL display device. DETAILED DESCRIPTION

[0026] Hereinafter, the preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the following embodiments only exemplarily represent the preferred structures of the present invention, and the scope of the present invention is not limited to these structures. In addition, the hardware structure and software structure, processing flow, manufacturing conditions, size, material, shape, etc. of the device in the following description are not intended to limit the scope of the present invention to these unless there is a particularly restrictive description.

[0027] The present invention can be preferably applied to a device for forming a thin film (material layer) of a desired pattern on the surface of a substrate by vacuum evaporation. As the material of the substrate, any material such as glass, a thin film of a polymer material, or a metal can be selected. In addition, as the evaporation material, any material such as an organic material, a metallic material (metal, metal oxide, etc.) can also be selected. Specifically, the technology of the present invention can be applied to manufacturing devices for organic electronic devices (for example, organic EL display devices, thin-film solar cells), optical components, etc. Among them, the manufacturing device for an organic EL display device is one of the preferred application examples of the present invention because the organic EL display element is formed by evaporating the evaporation material and evaporating it onto the substrate through a mask.

[0028] (Example)

[0029] Reference Figure 1 to Figure 7 , a film forming apparatus according to an embodiment of the present invention is described. Figure 1 This is a schematic diagram of an electronic device manufacturing apparatus equipped with a film forming apparatus according to an embodiment of the present invention, and is a diagram schematically showing various devices constituting the manufacturing apparatus in a top view. Figure 2 It is a perspective view showing the internal structure of the film forming apparatus according to the embodiment of the present invention. Figure 3 This is a schematic diagram of the internal structure of the film forming apparatus according to the embodiment of the present invention, and is a diagram showing the internal structure of the film forming apparatus as viewed from the front. Figure 4 This is a schematic diagram showing a moving mechanism of a film forming source according to an embodiment of the present invention, and is a diagram schematically showing the moving mechanism in a top view. Figure 5 It is a schematic diagram of a moving mechanism of a film forming source according to an embodiment and a modified example of the present invention, and is a diagram schematically showing the moving direction of the film forming source. Figure 6 and Figure 7 This is a diagram that explains the relationship between the elapsed time and various actions.

[0030] <Electronic device manufacturing equipment>

[0031] The electronic device manufacturing apparatus of this embodiment includes a plurality of cluster devices and a relay device that connects adjacent cluster devices to each other. Figure 1 As shown, the cluster device includes a plurality of film forming devices 1 for forming a thin film on a substrate P, a plurality of mask storage devices 2 for storing masks before and after use, and a conveying chamber 3 arranged in the center thereof. A conveying robot (not shown) is provided in the conveying chamber 3, and the conveying robot conveys the substrate P relative to the plurality of film forming devices 1, and conveys the mask M relative to the film forming devices 1 and the mask storage device 2. The conveying robot is, for example, a robot having a structure in which a manipulator for holding the substrate P or the mask M is mounted on a multi-jointed arm.

[0032] In the film forming apparatus 1, the evaporation material contained in the evaporation source 110 as the film forming source is evaporated or sublimated by heating by a heater, and is deposited on the substrate through the mask M. The film forming apparatus 1 performs a series of film forming processes, including the handover of the substrate P with the conveying robot, the adjustment (alignment) of the relative position of the substrate P and the mask M, the fixing of the substrate P to the mask M, and film formation (evaporation).

[0033] In the mask storage device 2, new masks and used masks used in the film forming process in the film forming device 1 are divided into two storage boxes for storage. The transport robot transports the used masks from the film forming device 1 to the storage box of the mask storage device 2, and transports the new masks stored in the other storage boxes of the mask storage device 2 to the film forming device 1.

[0034] The cluster device is connected to a passage chamber 4 and a buffer chamber 5. The passage chamber 4 is used to transport the substrate P from the upstream side in the flow direction of the substrate P to its own cluster device, and the buffer chamber 5 is used to transport the substrate P that has completed the film forming process in the cluster device to other cluster devices on the downstream side. The conveying robot of the conveying chamber 3 receives the substrate P from the passage chamber 4 on the upstream side and transports it to one of the film forming devices 1 in the cluster device. In addition, the conveying robot receives the substrate P that has completed the film forming process in the cluster device from one of the film forming devices 1 and transports it to the buffer chamber 5 connected to the downstream side. The buffer chamber 5 is preferably configured to temporarily accommodate a plurality of substrates P when there is a difference in processing speed between the cluster device on the upstream side and the cluster device on the downstream side, or when the substrate P cannot be normally transported due to a fault on the downstream side.

[0035] A swirl chamber 6 for changing the orientation of the substrate P is provided between the buffer chamber 5 and the passage chamber 4. A conveying robot (not shown) is provided in the swirl chamber 6, which is used to receive the substrate P from the buffer chamber 5, rotate the substrate P 180 degrees, and convey it to the passage chamber 4. As a result, the orientation of the substrate P in the cluster device on the upstream side and the cluster device on the downstream side becomes the same, and substrate processing becomes easy.

[0036] The passage chamber 4, the buffer chamber 5 and the swirl chamber 6 are so-called relay devices connecting cluster devices. The relay device provided on the upstream and / or downstream side of the cluster device includes at least one of the passage chamber, the buffer chamber and the swirl chamber.

[0037] The film forming device 1, the mask storage device 2, the transfer chamber 3, the buffer chamber 5, the swirl chamber 6, etc. are maintained in a high vacuum state during the manufacturing process of the organic EL display panel. The passage chamber 4 is usually maintained in a low vacuum state, but can be maintained in a high vacuum state as needed.

[0038] In this embodiment, refer to Figure 1, the structure of the electronic device manufacturing device is described, but the present invention is not limited thereto, and other types of devices and chambers may be provided, and the configuration between these devices and chambers may be changed. For example, in a relay device connected to a part of the cluster devices of the electronic device manufacturing device, a passage chamber may be provided on the upstream and downstream sides of the vortex chamber instead of a buffer chamber. In addition, a substrate rotating device for changing the orientation of the substrate may be provided in the passage chamber instead of a vortex chamber, and the substrate rotating device may not be provided if the orientation of the substrate does not need to be changed.

[0039] In addition, the film forming device 1 has a control unit. The control unit has various control functions such as conveying the substrate P, aligning the substrate P, aligning the mask M, controlling the evaporation source, and controlling the film forming. The control unit can be composed of a computer having a processor, memory, storage, I / O, etc. In this case, the function of the control unit is realized by the processor executing a program stored in the memory or storage. As a computer, a general-purpose personal computer can be used, and an embedded computer or PLC (programable logic controller) can also be used. Alternatively, a part or all of the functions of the control unit can be constituted by a circuit such as ASIC or FPGA. In addition, a control unit can be set according to each film forming device, or one control unit can be configured to control multiple film forming devices. The film forming device 1 is described in more detail below.

[0040] <Film forming equipment>

[0041] like Figure 2 and Figure 3 As shown in FIG. 1 , the film forming apparatus 1 comprises: a film forming chamber 10 whose interior is a vacuum environment, a film forming source unit 100 disposed in the film forming chamber 10, and a first moving mechanism 300 and a second moving mechanism 400 for moving the film forming source unit 100. The film forming chamber 10 is an airtight container, and its interior is maintained in a vacuum state (or a decompressed state) by an exhaust pump (not shown). The first moving mechanism 300 is for moving the film forming source unit 100 in a first direction (in a Figure 3 More specifically, the film forming source unit 100 is configured to reciprocate linearly in the first direction by the first moving mechanism 300. In addition, the second moving mechanism 400 is configured to move the film forming source unit 100 in a second direction (in the left and right direction) intersecting the first direction. Figure 3 More specifically, the film forming source unit 100 is configured to move linearly back and forth in the second direction by the second moving mechanism 400. In addition, the second moving mechanism 400 is configured to be able to move in the first direction by the first moving mechanism 300. In addition, in this embodiment, the first direction is orthogonal to the second direction.

[0042] The film forming source unit 100 includes an evaporation source 110 as a film forming source. For the evaporation source 110, various known technologies that can be used in the so-called vacuum evaporation device can be used, so its detailed description is omitted. In addition, the film forming device 1 is also provided with an opening and closing baffle (not shown) that cuts off or passes the evaporation material evaporated from the evaporation source 110, and a film thickness monitor (not shown) that monitors the evaporation rate of the evaporation material released from the evaporation source 110. In addition, there are also components that support the substrate P and the mask M respectively, and an alignment device for aligning the substrate P and the mask M by moving at least one of the components supporting the substrate P and the components supporting the mask M. For these components, known technologies can also be appropriately used, so their description is omitted. In addition, in the present embodiment, the film forming device is a so-called vacuum evaporation device, and the film forming source is an evaporation source. However, the film forming device of the present invention can also be applied to a sputtering device, for example. In this case, the film forming source is composed of a target material, etc.

[0043] <Moving mechanism>

[0044] Special reference Figure 4 , the moving mechanism of the film forming source unit 100 having the evaporation source 110 is described. The film forming source unit 100 is fixed to the second moving mechanism 400. An atmospheric box is provided in the film forming source unit 100. The interior of the atmospheric box is configured to be connected to the outside of the film forming chamber 10 through the interior of the first atmospheric arm 210 and the second atmospheric arm 220. Through such a structure, it is possible to connect electrical wiring and cooling pipes in the film forming source unit 100. In addition, the first atmospheric arm 210 and the second atmospheric arm 220 are configured to move in accordance with the movement of the film forming source unit 100. More specifically, the first atmospheric arm 210 is configured so that one end thereof can rotate freely relative to the bottom plate of the film forming chamber 10. Moreover, in the second atmospheric arm 220, one end thereof is supported by an axis so as to rotate freely relative to the other end of the first atmospheric arm 210, and the other end thereof is supported by an axis so as to rotate freely relative to the atmospheric box provided in the film forming source unit 100.

[0045] In the film forming apparatus 1 of the present embodiment, it is configured to be able to Figure 2 and Figure 4Film formation is performed in each of the regions on the A side (referred to as the first region A) and the B side (referred to as the second region B). When film formation is performed in the first region A, the film formation source unit 100 is moved to the first region A by the first moving mechanism 300, and the film formation source unit 100 is moved by the second moving mechanism 400 while the film formation source unit 100 is operated, so that film formation can be performed on the substrate P arranged in the first region A through the mask M. When film formation is performed in the second region B, the film formation source unit 100 is moved to the second region B by the first moving mechanism 300, and the film formation source unit 100 is moved by the second moving mechanism 400 while the film formation source unit 100 is operated, so that film formation can be performed on the substrate P arranged in the second region B through the mask M.

[0046] The basic structure and operation mechanism of the first moving mechanism 300 and the second moving mechanism 400 are the same. These moving mechanisms include a device called a linear motion guide device, etc., and include a guide rail extending linearly and a moving body moving along the guide rail.

[0047] The first moving mechanism 300 includes a pair of first guide rails 310 arranged parallel to each other. Furthermore, two first moving bodies (not shown) moving along each of the first guide rails 310 are arranged on each of the pair of first guide rails 310. Furthermore, a pair of second guide rails 410 constituting the second moving mechanism 400 are fixed to a plurality of first moving bodies. Specifically, one end side of the second guide rail 410 on one side is fixed to a first moving body arranged on one side of the pair of first guide rails 310, and the other end side is fixed to a first moving body arranged on the other side of the pair of first guide rails 310. The same is true for the second guide rail 410 on the other side. In addition, the pair of second guide rails 410 are connected by a pair of connecting members 330. Furthermore, a gear 340 that is rotated by a driving source (motor, etc.) not shown is arranged on at least one of the pair of connecting members 330. The gear 340 is configured to mesh with a rack formed on the side of the first guide rail 310. With the above-described configuration, the gear 340 is rotated by the driving source, so that the entire second moving mechanism 400 can be linearly reciprocated in the first direction together with the plurality of first moving bodies.

[0048] The second moving mechanism 400 includes a pair of second guide rails 410 arranged parallel to each other. In addition, two second moving bodies (not shown) that move along the second guide rails 410 are provided on each of the pair of second guide rails 410. In addition, the film forming source unit 100 is fixed to the plurality of second moving bodies. The film forming source unit 100 is provided with a rotating shaft 441 and gears 442 provided at both ends of the rotating shaft 441. The gears 442 are configured to mesh with racks formed on the upper surface of the second guide rails 410. With the above structure, the gears 442 are rotated together with the rotating shaft 441 by a driving source not shown in the figure, so that the film forming source unit 100 can be linearly reciprocated in the second direction together with the plurality of second moving bodies.

[0049] As described above, the film forming source unit 100 is directly fixed to the second moving body and indirectly fixed to the first moving body. In addition, in the first moving mechanism 300 and the second moving mechanism 400 described above, a case where a so-called rack-and-pinion mechanism is used as a mechanism for moving the moving body is shown. However, in these moving mechanisms, the mechanism for moving the moving body is not limited to the rack-and-pinion mechanism, and various known technologies such as a ball screw mechanism can be used.

[0050] <Modification of the moving mechanism>

[0051] exist Figure 5 (a) schematically shows in a top view the moving range of the evaporation source 110 provided in the film forming source unit 100 relative to the first area A and the second area B in the above-mentioned moving mechanism. In the film forming device 1 of the present embodiment, the film forming action is performed while the evaporation source 110 is moved relative to the substrate P in a stationary state. When the above-mentioned moving mechanism is adopted, the direction S in which the evaporation source 110 moves between the first area A and the second area B intersects with the directions TA and TB in which the evaporation source 110 moves during the film forming action. More specifically, the direction S is orthogonal to the directions TA and TB. In addition, the direction TA is the moving direction of the evaporation source 110 when the film forming action is performed in the first area A, and the direction TB is the moving direction of the evaporation source 110 when the film forming action is performed in the second area B. The direction TA is parallel to the direction TB.

[0052] The present invention is not limited to the above-mentioned moving mechanism. Figure 5(b) shows another example. In the illustrated example, the direction S in which the evaporation source 110 moves between the first area A and the second area B is parallel to the directions TA and TB in which the evaporation source 110 moves during film formation. When such a structure is adopted, a single moving mechanism can be used to perform film formation in the first area A and film formation in the second area B by the evaporation source 110. That is, the guide rails and the moving body for moving the evaporation source 110 between the first area A and the second area B and the guide rails and the moving body for moving the evaporation source 110 during film formation in the first area A and the second area B can be shared. In addition, the driving source for moving the moving body can also be shared. Therefore, there is an advantage in that the moving mechanism can be simplified.

[0053] <Film forming operation>

[0054] The film forming operation performed by the film forming apparatus 1 constructed as described above is described. In the film forming apparatus 1 of the present embodiment, while the film forming operation is being performed in the first area A by the evaporation source 110, a preparatory operation for performing the film forming operation is performed on the substrate P sent to the second area B. In addition, while the film forming operation is being performed in the second area B, a preparatory operation is performed on the substrate P sent to the first area A. In the film forming apparatus 1, these steps are repeated alternately. In addition, the preparatory operation refers to an operation required before starting the film forming operation on the substrate P, including, for example, the operation of sending out the substrate P on which the film forming has been completed, the operation of aligning the sent-in substrate P and the mask M by an alignment device not shown, and the like.

[0055] exist Figure 6 and Figure 7 , various actions in the first region A and various actions in the second region B relative to the elapsed time are shown. Figure 6 (a) shows various actions in the case of continuously performing normal actions. In the figure, T1 is a period during which a film-forming action is being performed, T2 is a period during which the evaporation source 110 is moving between the first area A and the second area B, and T3 is a period during which a preparatory action is performed. If the action is performed normally, during the period T1 during which the film-forming action is being performed in the first area A, a preparatory action is simultaneously performed in the second area B (refer to period T3). Then, after these actions are completed, the evaporation source 110 moves to the second area B, and during the period T1 during which the film-forming action is being performed in the second area B, a preparatory action is simultaneously performed in the first area A (refer to period T3). Thereafter, the evaporation source 110 moves to the first area A. Such actions are repeated. Therefore, while a preparatory action for a film-forming action is being performed in one area, a film-forming action is performed in another area, thereby improving productivity.

[0056] However, if the delivery of substrates to any area is delayed due to some kind of failure, the time until the preparation operation in that area is completed will be longer. Figure 6 An example thereof is shown in (b). In the figure, T4 is the period of delayed substrate feeding. As shown in the figure, when a delay in substrate feeding occurs in the second area B, the start and end of the preparation period T3 in the second area B will be delayed. As a result, the following state is achieved: even if the film forming action is completed in the first area A, and then the preparation action with respect to the new substrate P is completed, the film forming action in the second area B is not completed. Therefore, in the first area A, the film forming action cannot be started before the film forming action in the second area B is completed and the evaporation source 110 moves to the first area A. Therefore, in the first area A, a standby period is required after the preparation action is completed. In the figure, T5 is the standby period. In addition, thereafter, as long as a failure such as substrate feeding does not occur again, the same action as the normal action described above is performed.

[0057] When the above operation is performed due to a delay in the substrate feeding, Figure 6 As can be seen from (b), a period (in the figure, refer to period T3A) during which preparation actions are performed simultaneously in the first area A and the second area B is generated. If the preparation actions are performed simultaneously in the first area A and the second area B in this way, there may be adverse effects such as temporary concentration of power load due to the concentration of actions. In addition, for example, in the case where the substrate P and the mask M are being aligned by the alignment device during the preparation action in the first area A during period T3A, the vibration generated by the preparation action in the second area B may be transmitted to the first area A. As a result, the vibration may have an adverse effect on the alignment of the substrate P and the mask M in the preparation action in the first area A. Therefore, in the film forming device 1 of the present embodiment, it is configured so that when there is a delay in the feeding of the substrate to the first area A or the second area B, the preparation actions normally performed are not performed simultaneously in the first area A and the second area B.

[0058] Furthermore, in the film forming apparatus 1, as described above, the conveyance of the substrate P, the alignment of the substrate P and the mask M, and the operation of the evaporation source 110 are controlled by the control unit. Therefore, in the film forming apparatus 1 of the present embodiment, the control unit can also control that when there is a delay in the feeding of the substrate to the first area A or the second area B, the preparation operation normally performed in the first area A and the second area B is not performed simultaneously.

[0059] Here, various known techniques can be used for the method of detecting the delay in the introduction of the substrate. For example, by providing a sensor for detecting the substrate P at the position where the substrate P is introduced in the film forming chamber 10, or by providing a sensor for detecting the substrate P on a member supporting the substrate P, the delay in the introduction of the substrate can be detected based on the information from these sensors. In addition, by detecting the movement of the above-mentioned conveying robot (not shown) provided in the conveying chamber 3, the delay in the introduction of the substrate can also be detected.

[0060] A plurality of operation steps for preventing the first area A and the second area B from simultaneously performing the preparation operation normally performed when there is a delay in the feeding of the substrate into the first area A or the second area B are described below.

[0061] <<Action procedure example 1>>

[0062] In the example 1 of the operation procedure, an example is described in which a structure is adopted in which, when a delay occurs in the feeding of a substrate into the first area A or the second area B, a preparation operation is not performed in the other area at least while the preparation operation is being performed in the area. Figure 6 An example of this is shown in (c) of FIG.

[0063] like Figure 6 As shown in (c), when a delay occurs in the introduction of the substrate in the second region B (see period T4), the start and end of the preparation period T3 in the second region B are delayed. Therefore, in the first region A, even if the film forming operation is completed and the evaporation source 110 moves to the second region B, it is configured to wait until the preparation operation in the second region B is completed (see waiting period T5), and the preparation operation is not started.

[0064] By adopting such a structure, when there is a delay in feeding the substrate to the first area A or the second area B, the preparatory operation normally performed in the first area A and the second area B can be performed without performing the preparatory operation simultaneously. In addition, in the case of step example 1, the preparatory operation is not performed simultaneously in the first area A and the second area B. Therefore, the adverse effects caused by performing the preparatory operation for film formation simultaneously in the first area A and the second area B can be suppressed.

[0065] After the preparation period T3 is completed in the second region B, the film forming operation is performed in the second region B, and the preparation operation is simultaneously performed in the first region A. Thereafter, unless a failure such as substrate feeding occurs again, the same operation as the normal operation described above is performed.

[0066] <<Action procedure example 2>>

[0067] In the example 2 of the operation step, an example is described in which the following structure is adopted: when there is a delay in the feeding of the substrate into the first area A or the second area B, the preparation operation is performed at a lower speed than normal in the other area at least while the preparation operation is being performed in the area. Figure 7 In order to facilitate comparison with the case of continuous normal operation, Figure 7 (a) shows various operations when normal operations are continuously performed.

[0068] like Figure 7 As shown in (b), when a delay occurs in the introduction of the substrate in the second region B (refer to period T4), the start and end of the preparation period T3 in the second region B are delayed. Therefore, in the first region A, after the film forming operation is completed and the evaporation source 110 moves to the second region B, the preparation operation is performed at a lower speed than normal (refer to the preparation operation period T3X at a lower speed). In addition, Figure 7 In the example shown in (b), even if the preparatory operation is performed at a reduced speed in the first region A, the film forming operation in the second region B is not completed at the end of the preparatory operation, so a standby period T5 is provided. However, depending on the delay period T4, the method of reducing the speed of the preparatory operation, etc., the standby period T5 may not be provided.

[0069] By adopting such a structure, when there is a delay in the feeding of the substrate to the first area A or the second area B, the preparatory action normally performed in the first area A and the second area B can be performed at different times. In addition, in the case of step example 2, although there is a period in which the preparatory action is performed simultaneously in the first area A and the second area B, the preparatory action in the area that is not the area where the feeding of the substrate is delayed is performed at a lower speed than the normal time. Therefore, it is possible to suppress the adverse effects caused by the preparatory action for film formation being performed simultaneously in the first area A and the second area B. In addition, by reducing the speed of the preparatory action (for example, reducing the feeding speed of the substrate P after film formation or reducing the action speed when aligning the substrate P with the mask M), the required power can be reduced.

[0070] After the film forming operation is completed in the second area B, unless a problem such as substrate feeding occurs again, the same operation as the above-mentioned normal operation is performed.

[0071] <<Action procedure example 3>>

[0072] In the example 3 of the operation step, an example is described in which a structure is adopted in which, when a delay occurs in the feeding of a substrate into the first area A or the second area B, a preparation operation is performed in the other area at a lower speed than normal while the preparation operation is being performed in the area. Figure 7 An example of this is shown in (c) of FIG.

[0073] like Figure 7 As shown in (c), when a delay in the introduction of the substrate occurs in the second region B (refer to period T4), the start and end of the preparation period T3 in the second region B are delayed. Therefore, in the preparation action performed in the first region A after the film forming action is completed and the evaporation source 110 moves to the second region B, the preparation action is performed at a speed reduced compared to the normal time during the period before the completion of the preparation action in the second region B (refer to the preparation action period T3X at a reduced speed). In the case of this step example 3, unlike step example 2, after the preparation action in the second region B is completed, the preparation action is performed in the first region A at the same speed as the normal time. In addition, Figure 7 In the example shown in (c), unlike the example shown in step example 2, the standby period T5 is not provided in the first area A, but the standby period T5 is sometimes provided according to the delay period T4, the preparatory action period T3X, etc.

[0074] By adopting such a structure, when there is a delay in the feeding of the substrate to the first area A or the second area B, the preparatory operation normally performed in the first area A and the second area B can be performed at the same time. In addition, in the case of step example 3, although there is a period in which the preparatory operation is performed simultaneously in the first area A and the second area B, the preparatory operation in the area other than the area where the feeding of the substrate is delayed is performed at a lower speed than the normal time. Therefore, it is possible to suppress the adverse effects caused by the preparatory operation for film formation being performed simultaneously in the first area A and the second area B.

[0075] After the preparation operation is completed in the second area B, unless a problem such as substrate feeding occurs again, the same operation as the above-mentioned normal operation is performed.

[0076] <<Action procedure example 4>>

[0077] In the example of operation step 4, an example of adopting the following structure is described: when there is a delay in the feeding of the substrate to the first area A or the second area B, at least during the preparation operation in the area, the film forming operation is performed in the other area at a lower moving speed of the evaporation source 110 than in normal time. Figure 7 An example of this is shown in (d) of FIG.

[0078] like Figure 7As shown in (d), when a delay in the introduction of the substrate occurs in the second region B (refer to the period T4), the start and end of the preparation period T3 in the second region B are delayed. Therefore, in the first region A, at least during the period of the preparation operation in the second region B, the film forming operation is performed at a lower moving speed of the evaporation source 110 than normal (refer to the film forming operation period T1X at a reduced speed). In the case of this step example 4, the moving speed of the evaporation source 110 in the first region A is reduced including the delay period T4 in the second region B, but the moving speed may be reduced at the start of the preparation operation in the second region B. In addition, when the moving speed of the evaporation source 110 is reduced, it may be considered to control the evaporation rate of the evaporation source 110 to obtain the desired film thickness.

[0079] By adopting such a structure, when there is a delay in feeding the substrate to the first area A or the second area B, the preparation operation normally performed in the first area A and the second area B can be performed without performing the preparation operation at the same time. In addition, in the case of step example 4, after the preparation period T3 in the second area B ends, the preparation period T3 in the first area A starts. Therefore, similar to step example 1, the preparation operation is not performed at the same time in the first area A and the second area B. Therefore, the adverse effects caused by performing the preparation operation for film formation at the same time in the first area A and the second area B can be suppressed.

[0080] In addition, after the preparation period T3 in the second area B is completed, the film forming operation is performed in the second area B, and the preparation operation is simultaneously performed in the first area A. Thereafter, unless a failure such as substrate feeding occurs again, the same operation as the normal operation described above is performed. The operation step examples 1 to 4 described above can be appropriately selected and adopted according to the use environment, etc.

[0081] (Method for manufacturing electronic device)

[0082] An example of an apparatus and method for manufacturing an electronic device using the film-forming apparatus of the above-mentioned embodiment will be described. Hereinafter, as an example of an electronic device, the structure and manufacturing method of an organic EL display device will be described. First, the organic EL display device to be manufactured will be described. Figure 8 (a) is an overall view of the organic EL display device 50. Figure 8 (b) shows the cross-sectional structure of one pixel.

[0083] like Figure 8As shown in (a), a plurality of pixels 52 having a plurality of light-emitting elements are arranged in a matrix in a display area 51 of an organic EL display device 50. The details will be described later, but the light-emitting elements each have a structure having an organic layer clamped by a pair of electrodes. In addition, the pixel mentioned here refers to the smallest unit that can display the desired color in the display area 51. In the case of the organic EL display device of this embodiment, the pixel 52 is formed by a combination of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B that display different light. The pixel 52 is often composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but it can also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and there is no particular limitation as long as it is at least one color.

[0084] Figure 8 (b) is Figure 8 Schematic diagram of a partial cross-section along line AB of (a). The pixel 52 has an organic EL element having a first electrode (anode) 54, a hole transport layer 55, light-emitting layers 56R, 56G, 56B, an electron transport layer 57, and a second electrode (cathode) 58 on a substrate 53. Among them, the hole transport layer 55, the light-emitting layers 56R, 56G, 56B, and the electron transport layer 57 are equivalent to organic layers. In addition, in the present embodiment, the light-emitting layer 56R is an organic EL layer that emits red, the light-emitting layer 56G is an organic EL layer that emits green, and the light-emitting layer 56B is an organic EL layer that emits blue. The light-emitting layers 56R, 56G, and 56B are respectively formed into patterns corresponding to light-emitting elements (sometimes also described as organic EL elements) that emit red, green, and blue. In addition, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common with the plurality of light-emitting elements 52R, 52G, and 52B, or may be formed for each light-emitting element. In addition, in order to prevent the first electrode 54 and the second electrode 58 from being short-circuited due to foreign matter, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer is degraded by moisture or oxygen, a protective layer 60 is provided to protect the organic EL element from moisture or oxygen.

[0085] exist Figure 8 In (b), the hole transport layer 55 and the electron transport layer 57 are represented as one layer, but according to the structure of the organic EL display element, they can also be formed by multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure can be formed between the first electrode 54 and the hole transport layer 55 so that holes can be smoothly injected from the first electrode 54 to the hole transport layer 55. Similarly, an electron injection layer can be formed between the second electrode 58 and the electron transport layer 57.

[0086] Next, an example of a method for manufacturing an organic EL display device will be described in detail.

[0087] First, a substrate 53 on which a circuit (not shown) for driving the organic EL display device and the first electrode 54 are formed is prepared.

[0088] An acrylic resin is formed by spin coating on the substrate 53 having the first electrode 54 formed thereon, and the acrylic resin is patterned by photolithography to form an opening in the portion having the first electrode 54 formed thereon to form the insulating layer 59. The opening corresponds to a light emitting region where the light emitting element actually emits light.

[0089] The substrate 53 with the patterned insulating layer 59 is fed into a film forming device, and the substrate is supported by a substrate support member, and a hole transport layer 55 is formed as a common layer on the first electrode 54 of the display area. The hole transport layer 55 is formed by vacuum evaporation. In fact, the hole transport layer 55 is formed to a size larger than the display area 51, so a high-definition mask is not required.

[0090] Next, the substrate 53 formed up to the hole transport layer 55 is sent to another film forming device and supported by a substrate support member. The substrate and the mask are aligned, the substrate is placed on the mask, and a red light-emitting layer 56R is formed on the portion of the substrate 53 where the red light-emitting element is configured. Similar to the film formation of the light-emitting layer 56R, a green light-emitting layer 56G is formed by another film forming device, and a blue light-emitting layer 56B is formed by another film forming device. After the film formation of the light-emitting layers 56R, 56G, and 56B is completed, an electron transport layer 57 is formed in the entire display area 51 by another film forming device. The electron transport layer 57 is formed as a common layer in the three-color light-emitting layers 56R, 56G, and 56B.

[0091] The substrate on which the electron transport layer 57 has been formed is moved to a sputtering device to form a second electrode 58 , and then moved to a plasma CVD device to form a protective layer 60 , thereby completing the organic EL display device 50 .

[0092] If the substrate 53 with the patterned insulating layer 59 is exposed to an environment containing moisture or oxygen from the time when it is introduced into the film forming apparatus until the film forming of the protective layer 60 is completed, the light-emitting layer composed of the organic EL material may be degraded by moisture or oxygen. Therefore, in this example, the substrate is introduced and removed between the film forming apparatuses in a vacuum environment or an inert gas environment.

[0093] Description of Reference Numerals

[0094] 1: Film forming device 2: Mask storage device 3: Transport chamber 4: Passage chamber 5: Buffer chamber 6: Swirl chamber 10: Film forming chamber 100: Film forming source unit 110: Evaporation source 210: First atmospheric arm 220: Second atmospheric arm 300: First moving mechanism 310: First guide rail 330: Connecting member 340: Gear 400: Second moving mechanism 410: Second guide rail 441: Rotating shaft 442: Gear A: First area B: Second area M: Mask P: Substrate.

Claims

1. A film forming device, comprising: a film forming chamber having a first region and a second region for forming a thin film relative to a substrate; and a film forming source that forms a thin film relative to the substrate, The film forming device alternately and repeatedly performs the following steps: a step of performing a preparatory action for performing a film forming action on the substrate sent to the second area while the film forming action is performed by the film forming source in the first area; and a step of performing the preparatory action on the substrate sent to the first area while the film forming action is performed in the second area. It is characterized in that When there is a delay in the feeding of the substrate into the first area or the second area, the preparation operation normally performed is not performed simultaneously in the first area and the second area.

2. The film forming device according to claim 1, characterized in that: When there is a delay in the feeding of the substrate into the first area or the second area, the preparatory operation is not performed in the other area at least while the preparatory operation is being performed in the area.

3. The film forming device according to claim 1, characterized in that: When there is a delay in the feeding of the substrate into the first area or the second area, the preparation operation is performed at a speed lower than normal in the other area at least while the preparation operation is being performed in the area.

4. The film forming device according to claim 1, characterized in that: The film forming operation is performed while the film forming source is moved relative to the substrate which is in a stationary state, and When there is a delay in feeding the substrate to the first area or the second area, the film forming operation is performed in the other area at a lower moving speed of the film forming source than normal while the preparation operation is being performed in at least that area.

5. The film forming device according to claim 1, characterized in that: The film forming operation is performed while the film forming source is moved relative to the substrate which is in a stationary state, and The direction in which the film formation source moves between the first region and the second region intersects with the direction in which the film formation source moves during the film formation operation.

6. The film forming device according to claim 1, characterized in that: The film forming operation is performed while the film forming source is moved relative to the substrate which is in a stationary state, and The direction in which the film forming source moves between the first region and the second region is parallel to the direction in which the film forming source moves during the film forming operation.

7. A method for manufacturing an electronic device, characterized in that: The method comprises a film forming step of forming a film on a substrate by using the film forming apparatus according to claim 1.

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