ICP etching equipment with cooling function

Abstract

The present application discloses an ICP etching apparatus capable of cooling. The apparatus comprises a cooling space and at least one air outlet connected to the cooling space. The apparatus includes an etching body, a coil, a matching device, a shield, and a fan. The etching body includes a plasma generating unit and an etching operation unit. The plasma generating unit and the etching operation unit together form a processing space. The cross-sectional dimensions of the plasma generating unit gradually increase from top to bottom. Cooling air blown into the cooling space by the fan is directed toward the plasma generating unit to remove heat from the processing space and cool the coil. The cooling air directed toward the plasma generating unit flows along the outer surface of the plasma generating unit and is ultimately discharged through the air outlet. The present invention can fully and quickly dissipate heat from the plasma generating unit, providing a stable processing environment for the etching operation and ensuring process quality.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to ICP etching equipment capable of cooling. Background Art

[0002] When etching semiconductors, ICP is used to excite plasma. Under the influence of the high-frequency electric field, the coil and plasma reaction chamber generate a large amount of heat. At high power, local temperatures can reach 300-400°C. Inadequate heat dissipation can affect process quality and even damage process components. Therefore, heat dissipation efficiency indirectly determines the maximum power the equipment can achieve, which in turn affects the process rate.

[0003] Most etching equipment is designed with a fan located above the etching body. The fan directs cooling air toward the etching body to cool the etching body and the coils located above it. As the fan directs the cooling air toward the etching body, most of the cooling air diffuses around the etching body, resulting in relatively low cooling air utilization. Furthermore, the upper surface of the etching body is typically horizontal, so the cooling air impacts the upper surface, causing kinetic energy loss. This reduces the cooling air's fluidity and the rate of heat loss from the etching body, resulting in poor heat dissipation. Summary of the Invention

[0004] One advantage of the present invention is that it provides an ICP etching device capable of cooling. The present invention can fully and quickly dissipate heat from a plasma generating portion, thereby providing a stable processing environment for the etching operation and ensuring process quality.

[0005] One advantage of the present invention is that it provides an ICP etching device that can be cooled. The present invention can gather the cooling air blown by the fan to the plasma generating part, effectively avoiding the cooling air from spreading around the plasma generating part, and improving the utilization rate of the cooling air.

[0006] One advantage of the present invention is that it provides an ICP etching device capable of cooling. The present invention can fully and quickly dissipate heat from the coil, thereby extending the service life of the coil.

[0007] One advantage of the present invention is that it provides an ICP etching device with a coolable temperature. By cooling the internal environment of the etching body and the coil, the present invention can increase the operating power of the ICP etching device with a coolable temperature, thereby improving the etching efficiency.

[0008] To achieve at least one of the above advantages of the present invention, the present invention provides an ICP etching apparatus with a coolable temperature, wherein the ICP etching apparatus has a cooling space and at least one air outlet connected to the cooling space, and the ICP etching apparatus with a coolable temperature comprises:

[0009] An etching body, the etching body comprising a plasma generating portion and an etching operation portion, the plasma generating portion being integrally formed at the top of the etching operation portion, the plasma generating portion and the etching operation portion jointly forming a processing space, the plasma generating portion forming an inlet communicating with the processing space, the inlet being used to introduce gas into the processing space formed in the plasma generating portion, the processing space formed in the etching operation portion being used for etching a wafer, the cross-sectional size of the plasma generating portion gradually increasing from top to bottom, and the plasma generating portion being implemented as a heat conductive material;

[0010] a coil, the coil being provided in the etching body and capable of being fed with a radio frequency signal. The coil fed with the radio frequency signal generates a high-frequency electromagnetic field so that the gas introduced into the processing space formed in the plasma generating portion through the inlet generates plasma, so that the plasma etches the wafer formed in the processing space of the etching operation portion;

[0011] A matching device, the matching device is in communication with the radio frequency generator, the matching device is used to adjust the radio frequency signal output by the radio frequency generator, the coil is in communication with the matching device, the matching device is used to pass the radio frequency signal to the coil;

[0012] a shielding cover, the shielding cover being installed on the top of the etching operation part and covering the outside of the plasma generating part;

[0013] A fan is provided above the shielding cover, the shielding cover is used to gather the cooling air guided by the fan, the coil is located in the cooling space, the fan corresponds to the plasma generating part and can introduce cooling air into the cooling space, the cooling air blown into the cooling space by the fan blows toward the plasma generating part to take away the heat in the processing space and cool the coil, and the cooling air blown toward the plasma generating part flows on the outer surface of the plasma generating part and is finally discharged from the air outlet.

[0014] According to one embodiment of the present invention, the air outlet is located at the lower end of the shielding cover and corresponds to the bottom end of the plasma generating portion. The cooling air flowing on the outer surface of the plasma generating portion can be guided by the plasma generating portion to the air outlet.

[0015] According to an embodiment of the present invention, the coil is sleeved on the plasma generating portion, and the size and shape of the coil match those of the plasma generating portion.

[0016] According to an embodiment of the present invention, the coil sleeved on the plasma generating portion covers a portion of an outer wall of the plasma generating portion.

[0017] According to an embodiment of the present invention, the coil sleeved on the plasma generating portion covers an outer wall of the plasma generating portion, and heat generated in the processing space of the plasma generating portion can be transferred to the coil through the plasma generating portion.

[0018] According to an embodiment of the present invention, the shielding cover is made of a conductive material, and the shielding cover can shield radio frequency.

[0019] According to one embodiment of the present invention, the matcher is installed on the top of the shielding cover, and the matcher has a channel connected to the cooling space. The fan can guide the cooling air from one end of the channel away from the cooling space into the channel and guide it to the cooling space. The fan is arranged in the channel or at the end of the channel.

[0020] According to an embodiment of the present invention, the fan is disposed in the channel, and the top of the shielding cover is open. In this case, the etching body, the matcher, and the shielding cover together form the cooling space.

[0021] According to an embodiment of the present invention, the fan is inserted into the top wall of the shielding cover and is located at the end of the channel. In this case, the etching body, the shielding cover and the fan together form the cooling space.

[0022] According to an embodiment of the present invention, the operating speed of the fan is adjustable.

[0023] Compared with the prior art, the ICP etching equipment capable of cooling down of the present invention has the following technical effects:

[0024] 1. The present invention gathers the cooling air guided by the fan, and uses the fan to guide the cooling air to blow toward the plasma generating portion whose cross-sectional size gradually increases from top to bottom, so as to fully and quickly dissipate heat from the plasma generating portion, thereby providing a stable processing environment for the etching operation.

[0025] 2. The fan of the present invention guides the cooling air to blow toward the plasma generating portion with a cross-sectional size gradually increasing from top to bottom, so as to increase the contact surface between the cooling air and the plasma generating portion, thereby improving the heat dissipation effect and the utilization rate of the cooling air.

[0026] 3. The coil of the present invention is sleeved on the plasma generating portion so as to utilize the cooling air flowing on the outer surface of the plasma generating portion to cool the coil, thereby fully and quickly dissipating heat from the coil and extending the service life of the coil.

[0027] 4. The present invention can improve the operating power of the ICP etching equipment capable of being cooled by cooling the internal environment of the etching body and the coil, thereby improving the etching efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 The schematic diagram shows the structure of the ICP etching equipment capable of cooling down according to the present invention.

[0029] Figure 2 A structural cross-sectional view of the ICP etching equipment capable of cooling down according to the present invention is shown.

[0030] Reference numerals:

[0031] Cooling space 1001; air outlet 1002;

[0032] Etching body 10; processing space 101; plasma generating portion 11; access port 1101; etching operation portion 12; carrier 13;

[0033] Coil 20;

[0034] Matcher 30; channel 301;

[0035] Shielding cover 40;

[0036] Fan 50. DETAILED DESCRIPTION

[0037] The following description is intended to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are for illustrative purposes only, and those skilled in the art will readily appreciate other obvious variations. The basic principles of the present invention defined in the following description may be applied to other embodiments, variations, improvements, equivalents, and other technical solutions that do not depart from the spirit and scope of the present invention.

[0038] Those skilled in the art should understand that, in the disclosure of the present invention, the terms "longitudinal", "transverse", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like to indicate orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the above terms should not be understood as limiting the present invention.

[0039] It is to be understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the elements may be multiple, and the term "one" should not be understood as a limitation on the quantity.

[0040] refer to Figures 1 to 2According to a preferred embodiment of the present invention, an ICP etching device with a coolable temperature will be described in detail below. The ICP etching device with a coolable temperature includes an etching body 10, and the etching body 10 includes a plasma generating part 11 and an etching operation part 12. The plasma generating part 11 is integrally formed on the top of the etching operation part 12. The plasma generating part 11 and the etching operation part 12 together form a processing space 101. The plasma generating part 11 forms an inlet 1101 connected to the processing space 101. The inlet 1101 is used to introduce gas into the processing space 101 formed in the plasma generating part 11. The processing space 101 formed in the etching operation part 12 is provided for etching wafers.

[0041] The ICP etching apparatus with temperature reduction further includes a coil 20 and a matching device 30. The coil 20 is disposed within the etching body 10. The matching device 30 is in communication with a radio frequency generator and is configured to adjust the radio frequency signal output by the radio frequency generator. The coil 20 is in communication with the matching device 30, and the matching device 30 is capable of transmitting the radio frequency signal to the coil 20. The coil 20, receiving the radio frequency signal, generates a high-frequency electromagnetic field, causing the gas introduced into the processing space 101 of the plasma generation unit 11 through the inlet 1101 to generate plasma, thereby etching the wafer formed in the processing space 101 of the etching operation unit 12.

[0042] Those skilled in the art will appreciate that the plasma generated by the excitation of the gas in the processing space 101 formed in the plasma generating portion 11 will continuously bombard the inner wall of the plasma generating portion 11, generating a large amount of heat, and the coil 20 will generate heat when an RF signal is passed through it.

[0043] refer to Figures 1 to 2 The ICP etching equipment with cooling function includes a shielding cover 40 and a fan 50. The shielding cover 40 is installed on the top of the etching operation part 12 and covers the outside of the plasma generating part 11. The fan 50 is arranged above the shielding cover 40. The shielding cover 40 is used to gather the cooling air guided by the fan 50 to prevent the cooling air from spreading from all sides and improve the utilization rate of the cooling air.

[0044] The ICP etching apparatus with a coolable temperature has a cooling space 1001, the coil 20 is located in the cooling space 1001, and the fan 50 corresponds to the plasma generating portion 11 and is capable of introducing cooling air into the cooling space 1001. The ICP etching apparatus with a coolable temperature has at least one air outlet 1002 in communication with the cooling space 1001. The air outlet 1002 is in communication with the cooling space 1001 and is used to discharge the cooling air that has completed the heat dissipation operation in the cooling space 1001.

[0045] refer to Figure 2 The cross-sectional dimensions of the plasma generating portion 11 gradually increase from top to bottom, and the plasma generating portion 11 is implemented as a heat-conducting material. The cooling air blown into the cooling space 1001 by the fan 50 blows toward the plasma generating portion 11 to remove the heat in the processing space 101 and cool the coil 20. The cooling air blown toward the plasma generating portion 11 flows along the outer surface of the plasma generating portion 11 and is ultimately guided out through the air outlet 1002 to fully and quickly dissipate heat, providing a stable processing environment for the etching operation, ensuring process quality, and increasing the contact surface between the cooling air and the plasma generating portion 11, thereby improving the heat dissipation effect and the utilization rate of the cooling air. In addition, by cooling the internal environment of the etching body 10 and the coil 20, the operating power of the ICP etching equipment capable of cooling can be increased, thereby improving the etching efficiency.

[0046] Preferably, the shielding cover 40 and the etching operation part 12 jointly form the air outlet 1002 .

[0047] In one embodiment, the air outlet 1002 is formed in the shielding cover 40 .

[0048] Preferably, there are four air outlet holes 1002, and the four air outlet holes 1002 are located around the plasma generating part 11, so as to discharge the cooling air in the cooling space 1001 in multiple directions to complete the heat dissipation operation, thereby accelerating the fluidity of the cooling air in the cooling space 1001 and improving the heat dissipation effect.

[0049] Preferably, the air outlet 1002 is located at the lower end of the shielding cover 40 and corresponds to the bottom end of the plasma generating part 11, so that the cooling wind flowing on the outer surface of the plasma generating part 11 can be guided by the plasma generating part 11 and directed to the air outlet 1002, so that the cooling wind that completes the heat dissipation operation can be quickly discharged.

[0050] It is worth mentioning that the coil 20 is sleeved on the plasma generating portion 11, and the size and shape of the coil 20 match the plasma generating portion 11. In this way, the cooling air blowing toward the plasma generating portion 11 flows along the outer surface of the coil 20, thereby fully and quickly dissipating heat from the coil 20 and extending the service life of the coil 20.

[0051] Preferably, the coil 20 sleeved on the plasma generating part 11 covers part of the outer wall of the plasma generating part 11. At this time, part of the plasma generating part 11 can be in direct contact with the cooling air in the cooling space 1001, so that the heat formed in the processing space 101 of the plasma generating part 11 can be quickly dissipated, thereby improving the heat dissipation effect.

[0052] In one embodiment, the coil 20 sleeved on the plasma generating portion 11 covers the outer wall of the plasma generating portion 11, and the heat formed in the processing space 101 of the plasma generating portion 11 can be transferred to the coil 20 through the plasma generating portion 11, so as to dissipate heat by using the cooling air flowing on the outer surface of the coil 20.

[0053] Preferably, the shielding cover 40 is made of a conductive material, and the shielding cover 40 can shield radio frequency to prevent high-frequency electromagnetic waves from causing harm to the human body.

[0054] Preferably, the shielding cover 40 is made of aluminum alloy.

[0055] refer to Figures 1 to 2 Preferably, the matcher 30 is installed on the top of the shielding cover 40, and the matcher 30 has a channel 301 connected to the cooling space 1001. The fan 50 can guide the cooling air from one end of the channel 301 away from the cooling space 1001 into the channel 301 and guide it to the cooling space 1001. The fan 50 is arranged in the channel 301 or at the end of the channel 301. At this time, the fan 50 does not occupy external space, effectively reducing the overall size.

[0056] It is worth mentioning that by arranging the matcher 30 and the fan 50 on the top of the shielding cover 40 and arranging the four air outlets 1002 around the plasma generating section 11, the cooling air that completes the heat dissipation operation can be quickly discharged from the four sides of the plasma generating section 11, so that the cooling air can flow quickly and evenly, ensuring that the plasma generating section 11 and the coil 20 can be quickly and evenly cooled. Compared with the existing technology, it effectively avoids the situation where the matcher 30 and / or the fan 50 are arranged on the side of the plasma generating section 11 and affect the flow of cooling air.

[0057] Preferably, the fan 50 is disposed in the channel 301 , and the top of the shielding cover 40 is open. At this time, the etching body 10 , the matcher 30 and the shielding cover 40 together form the cooling space 1001 .

[0058] As a variant, the fan 50 is installed on the top wall of the shielding cover 40 and is located at the end of the channel 301. At this time, the etching body 10, the shielding cover 40 and the fan 50 together form the cooling space 1001.

[0059] In one embodiment, the fan 50 and the matcher 30 are adjacently arranged at the top of the shielding cover 40, and the fan 50 is inserted into the top wall of the shielding cover 40. At this time, the etching body 10, the shielding cover 40 and the fan 50 jointly form the cooling space 1001, and the channel 301 is not set.

[0060] In another embodiment, the top of the shielding cover 40 is open, and the matcher 30 and the fan 50 are arranged side by side on the top of the shielding cover 40. At this time, the etching body 10, the matcher 30, the shielding cover 40 and the fan 50 jointly form the cooling space 1001, and the channel 301 is not set.

[0061] It is worth mentioning that the operating speed of the fan 50 is adjustable to regulate the internal temperature of the processing space 101 and the temperature of the coil 20, so as to effectively avoid excessive heat affecting processing while saving energy.

[0062] refer to Figure 2 The etching body 10 further includes a carrier 13 , which is installed in the processing space 101 formed in the etching operation part 12 and corresponds to the plasma generating part 11 , and is used to carry the wafer.

[0063] Those skilled in the art will appreciate that the embodiments of the present invention described above and shown in the accompanying drawings are intended to be illustrative only and are not intended to limit the present invention. The advantages of the present invention have been fully and effectively achieved. The functional and structural principles of the present invention have been demonstrated and illustrated in the embodiments. Any variations or modifications may be made to the embodiments of the present invention without departing from the principles described.

Claims

1. ICP etching equipment capable of cooling, characterized in that: The ICP etching equipment capable of cooling has a cooling space and at least one air outlet connected to the cooling space, and the ICP etching equipment capable of cooling includes: An etching body, the etching body comprising a plasma generating portion and an etching operation portion, the plasma generating portion being integrally formed at the top of the etching operation portion, the plasma generating portion and the etching operation portion jointly forming a processing space, the plasma generating portion forming an inlet communicating with the processing space, the inlet being used to introduce gas into the processing space formed in the plasma generating portion, the processing space formed in the etching operation portion being used for etching a wafer, the cross-sectional size of the plasma generating portion gradually increasing from top to bottom, and the plasma generating portion being implemented as a heat conductive material; a coil, the coil being provided in the etching body and capable of being fed with a radio frequency signal. The coil fed with the radio frequency signal generates a high-frequency electromagnetic field so that the gas introduced into the processing space formed in the plasma generating portion through the inlet generates plasma, so that the plasma etches the wafer formed in the processing space of the etching operation portion; A matching device, the matching device is in communication with the radio frequency generator, the matching device is used to adjust the radio frequency signal output by the radio frequency generator, the coil is in communication with the matching device, the matching device is used to pass the radio frequency signal to the coil; a shielding cover, the shielding cover being installed on the top of the etching operation part and covering the outside of the plasma generating part; a fan, the fan being disposed above the shielding cover, the shielding cover being used to gather cooling air guided by the fan, the coil being located in the cooling space, the fan corresponding to the plasma generating portion and capable of introducing cooling air into the cooling space, the cooling air blown into the cooling space by the fan being blown toward the plasma generating portion to remove heat within the processing space and cool the coil, the cooling air blown toward the plasma generating portion flowing along an outer surface of the plasma generating portion and ultimately being discharged through the air outlet; The matching device is mounted on the top of the shielding cover, and has a channel connected to the cooling space. The fan can guide cooling air from one end of the channel away from the cooling space into the channel and then directed to the cooling space. The fan is arranged in the channel or at an end of the channel. The fan is arranged in the channel, and the top of the shielding cover is open. At this time, the etching body, the matcher and the shielding cover together form the cooling space.

2. The ICP etching equipment capable of cooling according to claim 1, characterized in that: The air outlet is located at a lower end of the shield cover and corresponds to a bottom end of the plasma generating portion. The cooling air flowing on the outer surface of the plasma generating portion can be guided by the plasma generating portion to the air outlet.

3. The ICP etching equipment capable of cooling according to claim 1 or 2, characterized in that: The coil is sleeved on the plasma generating portion, and the size and shape of the coil match those of the plasma generating portion.

4. The ICP etching equipment capable of cooling according to claim 3, characterized in that: The coil sleeved on the plasma generating portion covers a portion of an outer wall of the plasma generating portion.

5. The ICP etching equipment capable of cooling according to claim 3, characterized in that: The coil sleeved on the plasma generating portion covers an outer wall of the plasma generating portion, and heat generated in the processing space of the plasma generating portion can be transferred to the coil through the plasma generating portion.

6. The ICP etching equipment capable of cooling according to claim 1, characterized in that: The shielding cover is made of a conductive material and can shield radio frequency.

7. The ICP etching equipment capable of cooling according to claim 1, characterized in that: The fan is inserted into the top wall of the shielding cover and is located at the end of the channel. At this time, the etching body, the shielding cover and the fan together form the cooling space.

8. The ICP etching equipment capable of cooling according to claim 1, characterized in that: The operating speed of the fan is adjustable.

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